CN1316697C - Clamp for measuring laser chip and making method - Google Patents
Clamp for measuring laser chip and making method Download PDFInfo
- Publication number
- CN1316697C CN1316697C CNB2004100333082A CN200410033308A CN1316697C CN 1316697 C CN1316697 C CN 1316697C CN B2004100333082 A CNB2004100333082 A CN B2004100333082A CN 200410033308 A CN200410033308 A CN 200410033308A CN 1316697 C CN1316697 C CN 1316697C
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- groove
- electrode
- substrate
- anchor clamps
- measurement device
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Abstract
The present invention relates to a clamp for measuring a laser chip, which is characterized in that the present invention comprises a base plate, a gold electrode and a tinning electrode, wherein the upper surface of the silicon base plate is provided with a V-shaped groove, the bottom of the V-shaped groove is a plane-shaped low mesa, the gold electrode is manufactured on the upper surface of the silicon base plate and the V-shaped groove, and the tinning electrode is manufactured on the low mesa of the V-shaped groove.
Description
Technical field
The invention belongs to field of optoelectronic devices, anchor clamps and manufacture method that a kind of Laser Measurement device chip of more specifically saying so is used.
Background technology
In the design process of optoelectronic IC and optical fiber telecommunications system, often need to set up the model of opto-electronic device (laser, detector and modulator etc.) accurately, wherein the value of model parameter needs to be determined that by the measurement of device the accuracy of model depends on the precision of measurement.
In the measurement of the high frequency characteristics of opto-electronic device chip,, need finish by business-like coplane microwave probe usually in order to guarantee the accuracy of measurement result.Before test, at first probe is calibrated, and then the influence of probe is deducted from measurement result with the calibration criterion of probe, so just can obtain the intrinsic property of photoelectric device accurately.
But in most of the cases, the P region electrode of semiconductor laser and N region electrode can not come Laser Measurement device chip with the coplane microwave probe of routine on different horizontal planes.In Laser Measurement device chip processes, people normally laser tube core be installed in one heat sink on.A pair of coplanar electrodes are arranged on heat sink, and the N region electrode of one of them electrode and chip welds together by golden tin solder, and another electrode then links to each other by the P region electrode of spun gold and chip, measures with microwave probe more at last.Because the high frequency characteristics of the chip of laser that the spun gold of pressure welding is right has very big influence.Therefore, also need through a series of calibration with influence from measurement result deduction spun gold.
Summary of the invention
In order to overcome the above problems, the object of the present invention is to provide measuring anchor clamps of a kind of chip of laser and manufacture method, use these anchor clamps directly to measure chip of laser with the coplane microwave probe, thus the complexity of having saved the pressure welding spun gold and having influenced from measurement result deduction spun gold.
The technical scheme that the present invention solves its technical problem is:
The anchor clamps that a kind of Laser Measurement device of the present invention chip is used is characterized in that, comprising:
One substrate, the upper surface of this substrate has a V-groove, and the bottom of this V-groove is the low table of a planar shaped;
-gold electrode, this gold electrode are produced on the upper surface of substrate and V-groove;
-zinc-plated electrode, this zinc-plated electrode are produced on the gold electrode on the low table of V-groove.
Wherein this substrate is silicon materials.
The manufacture method of the anchor clamps that a kind of Laser Measurement device of the present invention chip is used is characterized in that, comprises the steps:
Upper surface at substrate 1 has a V-groove, and the bottom of this V-groove is the low table of a planar shaped;
On the upper surface of substrate and V-groove, make one deck gold electrode;
On the gold electrode on the low table of V-groove, make the zinc-plated electrode of one deck.
Wherein this substrate is silicon materials.
Wherein the V-groove on the substrate is to adopt the micromachining technology of dry etching and wet etching combination to be made.
Wherein the gold electrode on the upper surface of substrate and V-groove is to adopt the method for photoetching and evaporation to make.
Wherein zinc-plated electrode is to adopt photoetching and electric plating method to make on the gold electrode of the low table of V-groove.
The invention has the beneficial effects as follows: in the measurement of chip of laser, can avoid the P region electrode of chip of laser being linked to each other with electrode on heat sink with spun gold, replace is by scolding tin chip of laser to be installed on the test fixture, adjust scolding tin simultaneously what with the P electrode that guarantees chip of laser and the electrode above the silicon chip on same horizontal plane, thereby can directly measure with the coplane microwave probe, with this anchor clamps chip of laser is measured, no longer need the pressure welding spun gold, also saved complexity calibration and the calculating carried out for the influence of deducting spun gold simultaneously.
Description of drawings
For further specifying technology contents of the present invention, below in conjunction with drawings and Examples the present invention is done a detailed description, wherein:
Fig. 1 is the cross sectional side view of the anchor clamps used of Laser Measurement device chip of the present invention;
Fig. 2 is the vertical view of Fig. 1;
Fig. 3 is that chip of laser is installed in the cross sectional side view on the test fixture.
Embodiment
See also Fig. 1, Fig. 2, the anchor clamps that a kind of Laser Measurement device chip is used, comprising:
One substrate 1, the upper surface of this silicon substrate 1 have a V-groove 2, and the bottom of this V-groove 2 is the low table 4 of a planar shaped, and this substrate 1 is silicon materials;
-gold electrode 3, this gold electrode 3 are produced on the upper surface of silicon substrate 1 and V-groove 2;
-zinc-plated electrode 5, this zinc-plated electrode 5 is produced on the low table 4 of V-groove 2.
The manufacture method of the anchor clamps that a kind of Laser Measurement device of the present invention chip is used comprises the steps:
Upper surface at substrate 1 has a V-groove 2, and the bottom of this V-groove 2 is the low table 4 of a planar shaped; Wherein V-groove 2 is to adopt the micromachining technology of dry etching and wet etching combination to be made, and this substrate 1 is silicon materials;
On the upper surface of silicon substrate 1 and V-groove 2, make one deck gold electrode 3; Wherein the gold electrode 3 on the upper surface of silicon substrate 1 and V-groove 2 is to adopt the method for photoetching and evaporation to make;
On the low table 4 of V-groove 2, make the zinc-plated electrode 5 of one deck; Wherein zinc-plated electrode 5 is to adopt photoetching and electric plating method to make.
The course of work of the present invention is:
See also shown in Figure 3ly, chip of laser 6 flatly is placed on the zinc-plated electrode 5 of anchor clamps, allow the N utmost point 7 of chip contact with zinc-plated electrode 5;
Chip of laser 6 and anchor clamps are put on the heater of nitrogen protection together, set heating-up temperature and time, the N utmost point 7 of chip is freezed together with zinc-plated electrode 5, take out the cooling back;
Two pin (not shown) of microwave probe are pressed in respectively on the gold electrode 3 of anchor clamps and the laser P electrode 8 chip of laser 6 is measured.
Claims (7)
1, the anchor clamps used of a kind of Laser Measurement device chip is characterized in that, comprising:
One substrate, the upper surface of this substrate has a V-groove, and the bottom of this V-groove is the low table of a planar shaped;
One gold electrode, this gold electrode are produced on the upper surface of substrate and V-groove;
One zinc-plated electrode, this zinc-plated electrode are produced on the gold electrode on the low table of V-groove.
2, the anchor clamps used of a kind of Laser Measurement device chip as claimed in claim 1 is characterized in that wherein this substrate is silicon materials.
3, the manufacture method of the anchor clamps used of a kind of Laser Measurement device chip is characterized in that, comprises the steps:
Upper surface at substrate (1) has a V-groove, and the bottom of this V-groove is the low table of a planar shaped;
On the upper surface of substrate and V-groove, make one deck gold electrode;
On the gold electrode on the low table of V-groove, make the zinc-plated electrode of one deck.
4, the manufacture method of the anchor clamps used of a kind of Laser Measurement device chip as claimed in claim 3 is characterized in that wherein this substrate is silicon materials.
5, the manufacture method of the anchor clamps used of a kind of Laser Measurement device chip as claimed in claim 3 is characterized in that, wherein the V-groove on the substrate is to adopt the micromachining technology of dry etching and wet etching combination to be made.
6, the manufacture method of the anchor clamps used of a kind of Laser Measurement device chip as claimed in claim 3 is characterized in that, wherein the gold electrode on the upper surface of substrate and V-groove is to adopt the method for photoetching and evaporation to make.
7, the manufacture method of the anchor clamps used of a kind of Laser Measurement device chip as claimed in claim 3 is characterized in that, wherein zinc-plated electrode is to adopt photoetching and electric plating method to make on the gold electrode of the low table of V-groove.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2004100333082A CN1316697C (en) | 2004-04-02 | 2004-04-02 | Clamp for measuring laser chip and making method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2004100333082A CN1316697C (en) | 2004-04-02 | 2004-04-02 | Clamp for measuring laser chip and making method |
Publications (2)
Publication Number | Publication Date |
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CN1677773A CN1677773A (en) | 2005-10-05 |
CN1316697C true CN1316697C (en) | 2007-05-16 |
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ID=35050147
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CNB2004100333082A Expired - Fee Related CN1316697C (en) | 2004-04-02 | 2004-04-02 | Clamp for measuring laser chip and making method |
Country Status (1)
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CN (1) | CN1316697C (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104458058A (en) * | 2014-09-26 | 2015-03-25 | 中国科学院半导体研究所 | Semiconductor laser unit operating temperature testing and calibration clamp |
CN111681972B (en) * | 2020-06-19 | 2024-03-15 | 中国航空无线电电子研究所 | Frock assisting gold removal of mounted chip with pins and Jin Tangxi removal method |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5291127A (en) * | 1991-05-03 | 1994-03-01 | Samsung Electronics Co., Ltd. | Chip-lifetime testing instrument for semiconductor devices |
JPH09213759A (en) * | 1996-01-30 | 1997-08-15 | Sony Corp | Semiconductor device |
JP2001274499A (en) * | 2000-03-27 | 2001-10-05 | Toshiba Electronic Engineering Corp | Semiconductor laser device and mounting method for semiconductor laser chip |
JP2004069628A (en) * | 2002-08-09 | 2004-03-04 | Matsushita Electric Ind Co Ltd | Method for producing in-line test sample |
-
2004
- 2004-04-02 CN CNB2004100333082A patent/CN1316697C/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5291127A (en) * | 1991-05-03 | 1994-03-01 | Samsung Electronics Co., Ltd. | Chip-lifetime testing instrument for semiconductor devices |
JPH09213759A (en) * | 1996-01-30 | 1997-08-15 | Sony Corp | Semiconductor device |
JP2001274499A (en) * | 2000-03-27 | 2001-10-05 | Toshiba Electronic Engineering Corp | Semiconductor laser device and mounting method for semiconductor laser chip |
JP2004069628A (en) * | 2002-08-09 | 2004-03-04 | Matsushita Electric Ind Co Ltd | Method for producing in-line test sample |
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CN1677773A (en) | 2005-10-05 |
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