CN1316443C - Electric current driver active matrix organic light-emitting diode pixel circuit and driving method - Google Patents
Electric current driver active matrix organic light-emitting diode pixel circuit and driving method Download PDFInfo
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- CN1316443C CN1316443C CNB031209432A CN03120943A CN1316443C CN 1316443 C CN1316443 C CN 1316443C CN B031209432 A CNB031209432 A CN B031209432A CN 03120943 A CN03120943 A CN 03120943A CN 1316443 C CN1316443 C CN 1316443C
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Abstract
The present invention relates to a pixel circuit of an active matrix organic light-emitting diode driven by electric current and a driving method thereof. In a pixel of an active matrix organic light-emitting diode driven by electric current, before the sweep phase of a current source to the charge and the discharge of a capacitor, the capacitor is precharged by a driving power supply to improve the problem of the insufficient displaying brightness of low gray scale.
Description
Technical field
The invention relates to a kind of active matrix organic light-emitting diode image element circuit, and particularly relevant for a kind of active matrix organic light-emitting diode image element circuit and driving method thereof of current drives.
Background technology
Along with the prosperity of Information technology, of all kinds as information equipments such as computer, walking circuit, PDA(Personal Digital Assistant) and digital cameras, all constantly weed out the old and bring forth the new.In these information equipments, display is being played the part of critical role all the time, and flat-panel screens (Flat PanelDisplay) is little by little to receive an acclaim owing to have the characteristic of slimming, lightweight and power saving.
In various flat-panel screens, active matrix organic light-emitting diode (Active MatrixOrganic Emitting Diode, being called for short AMOLED) visual angle is wide, color contrast is effective because of having, response speed reaches low cost and other advantages soon for display, so be very suitable for application as small-size displays such as electronic clock, walking circuit, personal digital assistant and digital cameras.
Please referring to shown in Figure 1, it is a kind of active matrix organic light-emitting diode pixel synoptic diagram of driven.Show among the figure that this active matrix organic light-emitting diode pixel comprises: change-over switch thin film transistor (TFT) 110, drive thin film transistors 120, electric capacity 130 and Organic Light Emitting Diode 140.Its display gray scale is determined by the voltage on the data line, when sweep trace scans so far pixel, meeting conducting change-over switch thin film transistor (TFT) 110, be sent to the grid of drive thin film transistors 120 with voltage, obtain grid voltage Vg and show to drive the required electric current Organic Light Emitting Diode 140 of flowing through with data line.Yet, because the critical voltage of the drive thin film transistors 120 of different pixels can be different because of the inequality of technology with mobility (mobility), so that under same grayscale voltage, the electric current of the Organic Light Emitting Diode 140 of flowing through also can be different, cause picture to show uneven situation.
Please referring to shown in Figure 2, it is the active matrix organic light-emitting diode pixel synoptic diagram of known a kind of current drives.Show among the figure that this active matrix organic light-emitting diode pixel comprises: first change-over switch 210, second change-over switch 220, the 3rd change-over switch 230, Organic Light Emitting Diode 240, drive thin film transistors 250 and electric capacity 260.During operation, at first conducting second change-over switch 220 and the 3rd change-over switch 230, the electric current that current source the is provided drive thin film transistors 250 of flowing through, and, at this moment, can finish the action of memory grid voltage to electric capacity 260 chargings.Then, cut off second change-over switch 220 and the 3rd change-over switch 230, and conducting first change-over switch 210, the luminous demonstration stage entered with control active matrix organic light-emitting diode pixel.
Significantly, the gray scale of the active matrix organic light-emitting diode pixel of this kind current drives is that the size by the electric current of current source decides, it can not be subjected to the critical voltage of the drive thin film transistors 250 between different pixels and the influence of mobility, and causes picture to show uneven situation.Yet, when gray scale is hanged down in the active matrix organic light-emitting diode pixel desire demonstration of this kind current drives, because the electric current of current source is less, be subjected to the dead resistance of display board, the influence of hesitation that electric capacity caused easily, make pixel can't in sweep time, finish charging to grid capacitance, thereby remember the grid voltage of mistake, so that in follow-up luminous demonstration stage, the luminance shortage of demonstration.
Summary of the invention
In view of this, the invention provides a kind of active matrix organic light-emitting diode image element circuit and driving method thereof of current drives, it can be used a driving power and come electric capacity precharge before the sweep phase of current source to capacitor charge and discharge, to improve the problem of low gray scale display brightness deficiency.
For reaching above-mentioned and other purpose, the invention provides a kind of active matrix organic light-emitting diode image element circuit of current drives, it comprises: active matrix organic light-emitting diode pixel and preliminary filling change-over switch.Wherein, the active matrix organic light-emitting diode pixel connects a current source, in order to the capacitor charge and discharge on the grid of drive thin film transistors, and the gray scale of active matrix organic light-emitting diode pixel, is that the size by the electric current of current source decides.The preliminary filling change-over switch then couples the grid and a driving power of drive thin film transistors, and in order to before current source is to capacitor charge and discharge, the controlling and driving power supply is to the precharge of electric capacity.
In one embodiment, above-mentioned drive thin film transistors is a N type thin film transistor (TFT), and its active matrix organic light-emitting diode pixel then more comprises: Organic Light Emitting Diode, first change-over switch, second change-over switch and the 3rd change-over switch.Wherein, Organic Light Emitting Diode has anode tap and cathode terminal, and anode tap is coupled to positive supply.One end of first change-over switch is coupled with the cathode terminal of OLED, and the other end couples the drain electrode of drive thin film transistors.One end of second change-over switch couples current source, and the other end also couples the drain electrode of drive thin film transistors.One end of the 3rd change-over switch couples the drain electrode of drive thin film transistors, and the other end couples the grid of drive thin film transistors and an end of electric capacity, and the other end of electric capacity and the source electrode of drive thin film transistors then are coupled to negative supply.
In another embodiment, above-mentioned drive thin film transistors is a P type thin film transistor (TFT), and its active matrix organic light-emitting diode pixel then more comprises: Organic Light Emitting Diode, first change-over switch, second change-over switch and the 3rd change-over switch.Wherein, Organic Light Emitting Diode has anode tap and cathode terminal, and cathode terminal is coupled to negative supply.One end of first change-over switch is coupled with the anode tap of OLED, and the other end couples the drain electrode of drive thin film transistors.One end of second change-over switch couples current source, and the other end also couples the drain electrode of drive thin film transistors.One end of the 3rd change-over switch couples the drain electrode of drive thin film transistors, and the other end couples the grid of drive thin film transistors and an end of electric capacity, and the other end of electric capacity and the source electrode of drive thin film transistors then are coupled to positive supply.
Wherein, first change-over switch, second change-over switch, the 3rd change-over switch and preliminary filling change-over switch can be N type thin film transistor (TFT) or P type thin film transistor (TFT).Driving power then also can use above-mentioned positive supply or negative supply, or uses and electric capacity can be precharged to the driving power that voltage difference approaches the critical voltage value of drive thin film transistors, to carry out the precharge of electric capacity.
In addition, in order to improve the critical voltage value of drive thin film transistors, the problem that can drift about along with the running time also can be used the driving power with two different potentials.Just when precharge, use can be precharged to electric capacity the current potential of the critical voltage value that approaches drive thin film transistors, and all the other times then use and the opposite polarity current potential of precharge, is absorbed in electric charge in the drive thin film transistors gate insulator with eliminating.
The present invention provides a kind of active matrix organic light-emitting diode image element driving method of current drives in addition, this active matrix organic light-emitting diode pixel connects a current source and a driving power, in order to respectively to the capacitor charge and discharge on the grid of drive thin film transistors.The method comprises the following steps: at first to come electric capacity is carried out precharge with driving power; Adjust the gray scale charging voltage value of electric capacity then with current source; And cut off current source to the discharging and recharging of electric capacity, enter the luminous demonstration stage with control active matrix organic light-emitting diode pixel.
Wherein, use can be precharged to electric capacity the driving power that voltage difference approaches the critical voltage value of drive thin film transistors, or as use the driving power with two different potentials above-mentionedly.
By in the above-mentioned explanation as can be known, use the active matrix organic light-emitting diode image element circuit and the driving method thereof of a kind of current drives provided by the present invention, because of before the sweep phase of current source to capacitor charge and discharge, having used a driving power comes electric capacity precharge, so in the time of can solving low gray scale and show, the problem of the luminance shortage that causes because of dead resistance, hesitation that electric capacity caused.
Description of drawings
Fig. 1 shows a kind of active matrix organic light-emitting diode pixel-by-pixel basis line chart of driven;
Fig. 2 shows the active matrix organic light-emitting diode pixel-by-pixel basis line chart of known a kind of current drives;
Fig. 3 shows the active matrix organic light-emitting diode image element circuit wiring diagram according to a kind of current drives of first embodiment of the invention;
Use N type thin film transistor (TFT) to make the active matrix organic light-emitting diode image element circuit wiring diagram of change-over switch in Fig. 4 displayed map 3;
The time sequential routine of the control signal of change-over switch figure in Fig. 5 displayed map 4;
Fig. 6 shows the active matrix organic light-emitting diode image element circuit wiring diagram according to a kind of current drives of second embodiment of the invention;
Use P type thin film transistor (TFT) to make the active matrix organic light-emitting diode image element circuit wiring diagram of change-over switch in Fig. 7 displayed map 6; And
The applied waveforms figure of driving power Vt in Fig. 8 displayed map 3.
110 change-over switch thin film transistor (TFT)s
120,250,650 drive thin film transistors
130,260,660 electric capacity
140,240,640 Organic Light Emitting Diodes
210,610 first change-over switches
220,620 second change-over switches
230,630 the 3rd change-over switches
270,670 preliminary filling change-over switches
Embodiment
Please refer to shown in Figure 3ly, it is the active matrix organic light-emitting diode image element circuit according to a kind of current drives of first embodiment of the invention.Show among the figure that the active matrix organic light-emitting diode image element circuit of this current drives more comprises a preliminary filling change-over switch 270 that is connected to driving power Vt except the active matrix organic light-emitting diode pixel that comprises Fig. 2.
Its mode of operation is: conducting preliminary filling change-over switch 270 at first, so that driving power Vt can be precharged to a voltage difference to electric capacity 260 before current source discharges and recharges electric capacity 260 in advance.This voltage difference preferably is the accurate position of approaching the critical voltage value of drive thin film transistors 250, so that current source is when discharging and recharging electric capacity 260, because of drive thin film transistors 250 conducting, and can make the voltage difference of electric capacity 260 be stable at the accurate position of driving voltage of the gray scale electric current in corresponding current source apace.Certainly, simplify the backguy and the power pack number of image element circuit as desire, positive supply Vdd that then can also pixel is used as driving power Vt, so that electric capacity 260 is precharged to a voltage quasi position.
After precharge, then enter the driving voltage adjusting stage, at this moment, cut off preliminary filling change-over switch 270 and conducting second change-over switch 220 and the 3rd change-over switch 230, then the voltage difference of electric capacity 260 can be adjusted to the accurate position of driving voltage of the gray scale electric current in corresponding current source apace.That is to say, when if the voltage difference of electric capacity 260 is higher than the accurate position of the driving voltage of gray scale electric current in corresponding current source, electric capacity 260 can be discharged to the accurate position of corresponding driving voltage, and when the voltage difference of electric capacity 260 was lower than the accurate position of driving voltage of gray scale electric current in corresponding current source, electric capacity 260 can charge to the accurate position of required driving voltage.
Afterwards, image element circuit enters the luminous demonstration stage, at this moment, cuts off second change-over switch 220 and the 3rd change-over switch 230, and conducting first change-over switch 210.The drain electrode of Organic Light Emitting Diode 240, drive thin film transistors 250 and the electric current of source electrode so flow through, the gray scale electric current of the current source that will equal to set because of the driving of the voltage difference of electric capacity 260.
Wherein, first change-over switch 210, second change-over switch 220, the 3rd change-over switch 230 and preliminary filling change-over switch 270 can be N type thin film transistor (TFT) or P type thin film transistor (TFT).Use active matrix organic light-emitting diode image element circuit that N type thin film transistor (TFT) makes change-over switch as shown in Figure 4, the time sequential routine of the control signal of its change-over switch then as shown in Figure 5.Though and the active matrix organic light-emitting diode image element circuit that uses P type thin film transistor (TFT) to make change-over switch does not illustrate, so have the knack of this skill person via with reference to figure 4 and Fig. 5, can easily bright its structure of Liao and running program.
Please refer to shown in Figure 6ly, it is the active matrix organic light-emitting diode image element circuit according to a kind of current drives of second embodiment of the invention.Show among the figure, the active matrix organic light-emitting diode image element circuit of this current drives is made the active matrix organic light-emitting diode pixel 690 of drive thin film transistors 650 except comprising with P type thin film transistor (TFT), more comprises a preliminary filling change-over switch 670 that is connected to driving power Vt.Wherein, active matrix organic light-emitting diode pixel 690 more comprises: electric capacity 660, Organic Light Emitting Diode 640, first change-over switch 610, second change-over switch 620 and the 3rd change-over switch 630.And Organic Light Emitting Diode 640 has anode tap and cathode terminal, and cathode terminal is coupled to negative supply Vss.One end of first change-over switch 610 is coupled with the anode tap of OLED 640, and the other end couples the drain electrode of drive thin film transistors 650.One end of second change-over switch 620 couples current source, and the other end also couples the drain electrode of drive thin film transistors 650.One end of the 3rd change-over switch 630 couples the drain electrode of drive thin film transistors 650, and the other end couples the grid of drive thin film transistors 650 and an end of electric capacity 660, and the source electrode of the other end of electric capacity 660 and drive thin film transistors 650 then is coupled to positive supply Vdd.
Its mode of operation is: conducting preliminary filling change-over switch 670 at first, so that driving power Vt can be precharged to a voltage difference to electric capacity 660 before current source discharges and recharges electric capacity 660 in advance.This voltage difference preferably is the accurate position of approaching the critical voltage value of drive thin film transistors 650, so that current source is when discharging and recharging electric capacity 660, because of drive thin film transistors 650 conducting, and can make the voltage difference of electric capacity 660 be stable at the accurate position of driving voltage of the gray scale electric current in corresponding current source apace.Certainly, simplify the backguy and the power pack number of image element circuit as desire, negative supply Vss that then can also pixel is used as driving power Vt, so that electric capacity 660 is precharged to a voltage quasi position.
After precharge, then enter the driving voltage adjusting stage, at this moment, cut off preliminary filling change-over switch 670 and conducting second change-over switch 620 and the 3rd change-over switch 630, then the voltage difference of electric capacity 660 can be adjusted to the accurate position of driving voltage of the gray scale electric current in corresponding current source apace.That is to say, when if the voltage difference of electric capacity 660 is higher than the accurate position of the driving voltage of gray scale electric current in corresponding current source, electric capacity 660 can be discharged to the accurate position of corresponding driving voltage, and when the voltage difference of electric capacity 660 was lower than the accurate position of driving voltage of gray scale electric current in corresponding current source, electric capacity 660 can charge to the accurate position of required driving voltage.
Afterwards, image element circuit enters the luminous demonstration stage, at this moment, cuts off second change-over switch 620 and the 3rd change-over switch 630 and conducting first change-over switch 610.The electric current of the source electrode of drive thin film transistors 650, drain electrode and Organic Light Emitting Diode 640 so flow through, the gray scale electric current of the current source that will equal to set because of the driving of the voltage difference of electric capacity 660.
Similarly, first change-over switch 610, second change-over switch 620, the 3rd change-over switch 630 and preliminary filling change-over switch 670 can be P type thin film transistor (TFT) or N type thin film transistor (TFT).Use active matrix organic light-emitting diode image element circuit that P type thin film transistor (TFT) makes change-over switch as shown in Figure 7, its change-over switch be control signal time sequential routine also as shown in Figure 5.Though and the active matrix organic light-emitting diode image element circuit that uses N type thin film transistor (TFT) to make change-over switch does not illustrate, so have the knack of this skill person via with reference to figure 7 and Fig. 5, can easily bright its structure of Liao and running program.
In addition, in order to improve the critical voltage value of drive thin film transistors, the problem that can drift about along with the running time also can be used the driving power with two different potentials.Please refer to shown in Figure 8, it is the applied waveforms figure of the driving power Vt of Fig. 3, among the figure when precharge, be to use the positive potential that electric capacity can be precharged to the critical voltage value that approaches drive thin film transistors 250, all the other times then use and the opposite polarity negative potential of precharge, are absorbed in electric charge in drive thin film transistors 250 gate insulators with eliminating.
In sum, can conclude a kind of active matrix organic light-emitting diode image element driving method of current drives.This active matrix organic light-emitting diode pixel connects a current source and a driving power, in order to respectively to the capacitor charge and discharge on the grid of drive thin film transistors.The method comprises the following steps: at first to come electric capacity is carried out precharge with driving power; Adjust the gray scale charging voltage value of electric capacity then with current source; And cut off current source to the discharging and recharging of electric capacity, enter the luminous demonstration stage with control active matrix organic light-emitting diode pixel.
Wherein, be that use can be precharged to electric capacity the driving power that voltage difference approaches the critical voltage value of drive thin film transistors, or use driving power with two different potentials.
Claims (14)
1. the active matrix organic light-emitting diode image element circuit of a current drives is characterized in that, comprising:
One active matrix organic light-emitting diode pixel connects a current source, in order to the capacitor charge and discharge on the grid of a drive thin film transistors, and the gray scale of this active matrix organic light-emitting diode pixel, is that the size by the electric current of this current source decides; And
One preliminary filling change-over switch couples the grid and a driving power of this drive thin film transistors, in order to before this current source is to this capacitor charge and discharge, controls the precharge of this driving power to this electric capacity.
2. the active matrix organic light-emitting diode image element circuit of current drives as claimed in claim 1 is characterized in that, this drive thin film transistors is a N type thin film transistor (TFT), and this active matrix organic light-emitting diode pixel more comprises:
One Organic Light Emitting Diode has an anode tap and a cathode terminal, and this anode tap couples a positive supply;
One first change-over switch, an end of this first change-over switch couples this cathode terminal, and the other end couples the drain electrode of this drive thin film transistors;
One second change-over switch, an end of this second change-over switch couples this current source, and the other end couples the drain electrode of this drive thin film transistors; And
One the 3rd change-over switch, one end of the 3rd change-over switch couples the drain electrode of this drive thin film transistors, the other end couples the grid of this drive thin film transistors and an end of this electric capacity, and the other end of this electric capacity and the source electrode of this drive thin film transistors then couple a negative supply.
3. the active matrix organic light-emitting diode image element circuit of current drives as claimed in claim 2 is characterized in that, this first change-over switch, this second change-over switch, the 3rd change-over switch and this preliminary filling change-over switch are N type thin film transistor (TFT).
4. the active matrix organic light-emitting diode image element circuit of current drives as claimed in claim 2 is characterized in that, this first change-over switch, this second change-over switch, the 3rd change-over switch and this preliminary filling change-over switch are P type thin film transistor (TFT).
5. the active matrix organic light-emitting diode image element circuit of current drives as claimed in claim 2 is characterized in that, uses this positive supply as this driving power.
6. the active matrix organic light-emitting diode image element circuit of current drives as claimed in claim 1 is characterized in that, this drive thin film transistors is a P type thin film transistor (TFT), and this active matrix organic light-emitting diode pixel more comprises:
One Organic Light Emitting Diode has an anode tap and a cathode terminal, and this cathode terminal couples a negative supply;
One first change-over switch, an end of this first change-over switch couples this anode tap, and the other end couples the drain electrode of this drive thin film transistors;
One second change-over switch, an end of this second change-over switch couples this current source, and the other end couples the drain electrode of this drive thin film transistors; And
One the 3rd change-over switch, one end of the 3rd change-over switch couples the drain electrode of this drive thin film transistors, the other end couples the grid of this drive thin film transistors and an end of this electric capacity, and the other end of this electric capacity and the source electrode of this drive thin film transistors then couple a positive supply.
7. the active matrix organic light-emitting diode image element circuit of current drives as claimed in claim 6 is characterized in that, this first change-over switch, this second change-over switch, the 3rd change-over switch and this preliminary filling change-over switch are P type thin film transistor (TFT).
8. the active matrix organic light-emitting diode image element circuit of current drives as claimed in claim 6 is characterized in that, this first change-over switch, this second change-over switch, the 3rd change-over switch and this preliminary filling change-over switch are N type thin film transistor (TFT).
9. the active matrix organic light-emitting diode image element circuit of current drives as claimed in claim 6 is characterized in that, uses this negative supply as this driving power.
10. the active matrix organic light-emitting diode image element circuit of current drives as claimed in claim 1 is characterized in that, this electric capacity is preliminary filling one predeterminated voltage value according to this drive current.
11. the active matrix organic light-emitting diode image element circuit of current drives as claimed in claim 1 is characterized in that this driving power has positive potential and negative potential.
12. the active matrix organic light-emitting diode image element driving method of a current drives, this active matrix organic light-emitting diode pixel connects a current source and a driving power, in order to respectively to the capacitor charge and discharge on the grid of a drive thin film transistors, it is characterized in that this method comprises the following steps:
With this driving power this electric capacity is carried out precharge;
Adjust the gray scale charging voltage value of this electric capacity with this current source; And
Cut off this current source to the discharging and recharging of this electric capacity, enter the luminous demonstration stage to control this active matrix organic light-emitting diode pixel.
13. the active matrix organic light-emitting diode image element driving method of current drives as claimed in claim 12 is characterized in that this electric capacity is preliminary filling one predeterminated voltage value according to this drive current.
14. the active matrix organic light-emitting diode image element driving method of current drives as claimed in claim 12 is characterized in that this driving power has the positive potential negative potential.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031209432A CN1316443C (en) | 2003-03-24 | 2003-03-24 | Electric current driver active matrix organic light-emitting diode pixel circuit and driving method |
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| Application Number | Priority Date | Filing Date | Title |
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| CNB031209432A CN1316443C (en) | 2003-03-24 | 2003-03-24 | Electric current driver active matrix organic light-emitting diode pixel circuit and driving method |
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| CN1532788A CN1532788A (en) | 2004-09-29 |
| CN1316443C true CN1316443C (en) | 2007-05-16 |
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| CNB031209432A Expired - Lifetime CN1316443C (en) | 2003-03-24 | 2003-03-24 | Electric current driver active matrix organic light-emitting diode pixel circuit and driving method |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI262464B (en) | 2004-12-13 | 2006-09-21 | Au Optronics Corp | Pixel driving circuit and method for active matrix organic light emission display |
| CN100430985C (en) * | 2004-12-29 | 2008-11-05 | 普诚科技股份有限公司 | Two segments type drive circuit for faceplate of organic LED |
| CN100353405C (en) * | 2004-12-29 | 2007-12-05 | 友达光电股份有限公司 | Pixel drive circuit and method for active electroluminescent display |
| KR101324756B1 (en) * | 2005-10-18 | 2013-11-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Display device and driving method thereof |
| CN101714333B (en) * | 2009-12-18 | 2012-05-23 | 友达光电股份有限公司 | Organic light-emitting diode display and drive circuit thereof |
| CN101868093B (en) * | 2010-06-08 | 2012-11-28 | 友达光电股份有限公司 | Driving circuit used for current driving element and luminous device |
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| EP1191512A2 (en) * | 2000-09-20 | 2002-03-27 | Seiko Epson Corporation | Driving circuit for active matrix type display, drive method of electronic equipment and electronic apparatus, and electronic apparatus |
| JP2002108285A (en) * | 2000-07-27 | 2002-04-10 | Semiconductor Energy Lab Co Ltd | Drive method for display device |
| JP2002189445A (en) * | 2000-12-19 | 2002-07-05 | Sony Corp | Image display device and its driving method |
| CN1369870A (en) * | 2001-02-08 | 2002-09-18 | 株式会社半导体能源研究所 | Light-emitting element and electronic appliance using such element |
| JP2002341828A (en) * | 2001-05-17 | 2002-11-29 | Toshiba Corp | Display pixel circuit |
| CN1402215A (en) * | 2001-07-06 | 2003-03-12 | Lg电子株式会社 | Driving circuit and method for current driving type display |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002108285A (en) * | 2000-07-27 | 2002-04-10 | Semiconductor Energy Lab Co Ltd | Drive method for display device |
| EP1191512A2 (en) * | 2000-09-20 | 2002-03-27 | Seiko Epson Corporation | Driving circuit for active matrix type display, drive method of electronic equipment and electronic apparatus, and electronic apparatus |
| JP2002189445A (en) * | 2000-12-19 | 2002-07-05 | Sony Corp | Image display device and its driving method |
| CN1369870A (en) * | 2001-02-08 | 2002-09-18 | 株式会社半导体能源研究所 | Light-emitting element and electronic appliance using such element |
| JP2002341828A (en) * | 2001-05-17 | 2002-11-29 | Toshiba Corp | Display pixel circuit |
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