CN1316343C - Conductive film joining structure of contact type panel - Google Patents
Conductive film joining structure of contact type panel Download PDFInfo
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- CN1316343C CN1316343C CNB2004100545071A CN200410054507A CN1316343C CN 1316343 C CN1316343 C CN 1316343C CN B2004100545071 A CNB2004100545071 A CN B2004100545071A CN 200410054507 A CN200410054507 A CN 200410054507A CN 1316343 C CN1316343 C CN 1316343C
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- touch panel
- integrated structure
- conducting film
- hard films
- film integrated
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Abstract
The present invention relates to a conductive film joining structure of a contact type panel. A non-oxide material is used for replacing silicon oxide and is used as the joint between an indium tin oxide film and a plastic base plate, so that the heat stability of the indium tin oxide film can not be influenced by the oxygen diffusion in the manufacturing process of the contact control type panel or during the plating of the indium tin oxide film.
Description
Technical field
The present invention is relevant with touch panel (Touch Panel) structure, in detail, is meant a kind of conducting film integrated structure with touch panel of good heat resistance and stability.
Background technology
Press, indium oxide tin film in the touch-control panel structure (Indium Tin Oxide film) quality very corrupt, the quality of the final products quality that often concerns, therefore, how in the touch panel manufacture process, safeguarding due thermotolerance of indium oxide tin film (ITO film) and stability, is a big problem in fact.
General touch panel differs too greatly and often with monox (SiO in response to the grating constant (lattice constant) of indium oxide tin film and plastic substrate in it constitutes indium oxide tin film and plastic substrate cohesive process in unit
2) film is as being used in combination, yet, when touch panel in manufacture process through every processing, as: after annealing thermal treatment (annealing) is tested (Reliability Testing) with reliability, because monox itself contains oxygen element, under long high-temperature service, oxygen element will enter in the indium oxide tin film because of diffusion, it will influence the due thermal stability of indium oxide tin film, promptly cause the tin indium oxide film quality to descend indirectly.
In addition, employed coiling type in manufacture process (ROLL TO ROLL) plastic substrate film coating equipment, because the isolation of gas and incomplete between its cavity and cavity, therefore the situation of oxygen diffusion takes place easily, thus, for oxygen being had responsive indium oxide tin film originally, more apparent unfavorable.
Summary of the invention
The object of the present invention is to provide a kind of conducting film integrated structure of touch panel, replace monox with the non-oxidized substance material and be used in combination with plastic substrate, can avoid influencing the thermal stability of indium oxide tin film because of oxygen diffusion as indium oxide tin film.
For achieving the above object, the conducting film integrated structure of touch panel provided by the invention includes:
One substrate has an end face and a bottom surface;
One non-oxidized substance binding layer, have one first with one second, first of this non-oxidized substance binding layer contacts with this substrate top surface;
One indium oxide tin film is located on second of this non-oxidized substance binding layer.
Wherein this substrate hard films of being located at this body one side by a plastic cement body and is formed, and this body another side forms this end face, and the one side that this hard films does not contact with this body forms this bottom surface.
Wherein this body is made by polyethylene terephthalate, polyethersulfone or polycarbonate, and thickness is between 100-200 μ m.
Wherein this hard films thickness is between 3-10 μ m.
Wherein this substrate is made up of a plastic cement body and two hard films, and this two hard films is located at the two sides of this body respectively, and respectively the one side that do not contact with this body of this hard films forms this end face and this bottom surface respectively.
Wherein this body is made by polyethylene terephthalate, polyethersulfone or polycarbonate, and thickness is between 100-200 μ m.
Wherein respectively this hard films thickness between 3-10 μ m.
Wherein this non-oxidized substance binding layer is that silicon nitride, titanium nitride, zirconium nitride, silit, titanium carbide, aluminium nitride or chromium nitride are made, and this non-oxidized substance joint thickness is between 10-1000 .
Description of drawings
Enumerate preferred embodiment of the present invention below, and after cooperating following accompanying drawing to be described in more detail in, wherein:
Fig. 1 is the synoptic diagram of first embodiment of the invention.
Fig. 2 is the synoptic diagram of second embodiment of the invention.
Embodiment
The present invention creates for improving combining between substrate and the indium oxide tin film in the touch panel component units, sees also first embodiment of the invention shown in Figure 1, and it includes a substrate 10, a non-oxidized substance binding layer 20 and an indium oxide tin film 30; Wherein:
The hard films 12 (Hard Coating) that this substrate 10 is located at these body 11 1 sides by a plastic cement body 11 and is constituted, these body 11 another sides form the end face 10a of this substrate door, and the one side that this hard films 12 does not contact with this body 11 then forms the bottom surface 10b of this substrate 10; And in the present embodiment, this body 11 is polyethylene terephthalate (Polyethylene Terephthalate, PET) made, its thickness is between 100-200 μ m, and this hard films 12 is to make the film of thickness between 3-10 μ m with the acryl organic resin; Certainly, the material of aforementioned body 11 select for use also can be polyethersulfone (Polyethersulfone, PES) or polycarbonate (Polycarbonate, PC), this hard films 12 can also make by the organic and inorganic composite material.
This non-oxidized substance binding layer 20 is to utilize existing silicon-aluminium target, feeds the nitrogen sputter and deposits and form the silicon nitride (Si of thickness between 10-1000 dust ()
3N
4) film, this non-oxidized substance binding layer 20 has one first 21 and 1 second 22, and its first 21 contacts with this substrate 10 end face 10a.
This indium oxide tin film 30 is to form on second 22 of this non-oxidized substance binding layer 20.
More than be each rete of conducting film integrated structure of touch panel of the present invention and the explanation of associated location thereof, below (table 1) for the present invention under the constant temperature and humidity condition respectively to monox (SiO
2) and silicon nitride (Si
3N
4) the reliability that conducting film carried out test during as binding layer, the face resistance result such as the tabular of gained:
Table 1
| The reliability test | Monox+ITO | Face change in resistance (R-Ro) | Silicon nitride+ITO | Face change in resistance (R-Ro) |
| Face resistance (Ro) before the test | 311.3 | 296 | ||
| 120hr. face resistance (Ro) | 314.9 | 3.6 | 293.6 | -2.4 |
| 288hr. face resistance (Ro) | 335.6 | 24.3 | 308.3 | 12.3 |
| 336hr. face resistance (Ro) | 355.3 | 44 | 303 | 7 |
| 426hr. face resistance (Ro) | 380.7 | 69.4 | 303.7 | 7.7 |
| 560hr. face resistance (Ro) | 381 | 69.7 | 305.8 | 9.8 |
| 752hr. face resistance (Ro) | 385.8 | 74.5 | 316.1 | 20.1 |
| 920hr. face resistance (Ro) | 390.3 | 79 | 317 | 21 |
As shown in Table 1, after silicon nitride replacement general commonly used monox the binding layer use as indium oxide tin film and plastic substrate of the present invention with non-oxidized substance, can find obviously that the face change in resistance of structure of the present invention is less, it represents the stable higher of work non-oxidized substance binding layer 20 of the present invention.
What deserves to be mentioned is in addition,, also can be selected from titanium nitride (TiN), zirconium nitride (ZrN), silit (SiC), titanium carbide (TiC), aluminium nitride (AlN) or chromium nitride (CrN) in order to make the material of non-oxidized substance binding layer of the present invention.
Because the present invention is as being used in combination between indium oxide tin film and plastic substrate with the non-oxidized substance of oxygen-free element, therefore, when touch panel in manufacturing process and under the high-temperature service environment through after every processing, can't oxygen diffusion take place and influence the face resistance stability of indium oxide tin film, base this make indium oxide tin film keep good thermotolerance and stability; Therefore, should obtain as the tin indium oxide film quality of touch panel critical material to promote, also improve the yield and the quality of making touch panel indirectly.
See also second embodiment of the invention shown in Figure 2 again, its structure includes a substrate 40, an one non-oxidized substance binding layer 50 and an indium oxide tin film 60, the material selection of aforementioned each rete is identical with first embodiment, repeat no more in this, and this second embodiment different with first embodiment be: this substrate 40 is respectively equipped with hard films 42 and hard films 43 in the two sides of its plastic cement body 41, and the one side that each hard films does not contact with this body 41 forms the end face 40a of substrate 40 and the bottom surface 40b of substrate 40 respectively, and this non-oxidized substance binding layer 50 contacts with this substrate 40 end face 40a.
Above said content, only for preferable possible embodiments of the present invention oneself, so use the equivalent structure variation that instructions of the present invention and claim are done such as, ought to be included in the claim of the present invention.
Claims (8)
1. the conducting film integrated structure of a touch panel includes:
One substrate has an end face and a bottom surface;
One deck non-oxidized substance binding layer, have one first with one second, first of this non-oxidized substance binding layer contacts with this substrate top surface;
Indium oxide layer tin film is located on second of this non-oxidized substance binding layer.
2. according to the conducting film integrated structure of the described touch panel of claim 1, it is characterized in that, wherein this substrate hard films of being located at this body one side by a plastic cement body and is formed, and this body another side forms this end face, and the one side that this hard films does not contact with this body forms this bottom surface.
3. according to the conducting film integrated structure of the described touch panel of claim 2, it is characterized in that wherein this body is made by polyethylene terephthalate, polyethersulfone or polycarbonate, and thickness is between 100-200 μ m.
4. according to the conducting film integrated structure of the described touch panel of claim 2, it is characterized in that wherein this hard films thickness is between 3-10 μ m.
5. according to the conducting film integrated structure of the described touch panel of claim 1, it is characterized in that, wherein this substrate is made up of a plastic cement body and two hard films, this two hard films is located at the two sides of this body respectively, and respectively the one side that do not contact with this body of this hard films forms this end face and this bottom surface respectively.
6. according to the conducting film integrated structure of the described touch panel of claim 5, it is characterized in that wherein this body is made by polyethylene terephthalate, polyethersulfone or polycarbonate, and thickness is between 100-200 μ m.
7. according to the conducting film integrated structure of the described touch panel of claim 5, it is characterized in that, wherein respectively this hard films thickness between 3-10 μ m.
8. according to the conducting film integrated structure of the described touch panel of claim 1, it is characterized in that, wherein this non-oxidized substance binding layer is that silicon nitride, titanium nitride, zirconium nitride, silit, titanium carbide, aluminium nitride or chromium nitride are made, and this non-oxidized substance joint thickness is between 10-1000 .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100545071A CN1316343C (en) | 2004-07-22 | 2004-07-22 | Conductive film joining structure of contact type panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100545071A CN1316343C (en) | 2004-07-22 | 2004-07-22 | Conductive film joining structure of contact type panel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1725161A CN1725161A (en) | 2006-01-25 |
| CN1316343C true CN1316343C (en) | 2007-05-16 |
Family
ID=35924656
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100545071A Expired - Fee Related CN1316343C (en) | 2004-07-22 | 2004-07-22 | Conductive film joining structure of contact type panel |
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| Country | Link |
|---|---|
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2619921B2 (en) * | 1988-06-27 | 1997-06-11 | 触媒化成工業株式会社 | Analog type transparent touch panel |
| US6473235B2 (en) * | 2000-02-18 | 2002-10-29 | Nippon Sheet Glass Co., Ltd. | Touch panel substrate having transparent conductive film |
-
2004
- 2004-07-22 CN CNB2004100545071A patent/CN1316343C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2619921B2 (en) * | 1988-06-27 | 1997-06-11 | 触媒化成工業株式会社 | Analog type transparent touch panel |
| US6473235B2 (en) * | 2000-02-18 | 2002-10-29 | Nippon Sheet Glass Co., Ltd. | Touch panel substrate having transparent conductive film |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1725161A (en) | 2006-01-25 |
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Owner name: DONGGUAN WAN SHI DA LIQUID CRYSTAL DISPLAY CO., LT Free format text: FORMER OWNER: SHENGHUA SCIENCE AND TECHNOLOGY CO LTD Effective date: 20100813 |
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Free format text: CORRECT: ADDRESS; FROM: TAICHUNG COUNTY, TAIWAN, CHINA TO: 511700 NO.239, GONGYE ROAD, SANGYUAN RESIDENTIAL QUARTER, DONGCHENG DISTRICT, DONGGUAN CITY, GUANGDONG PROVINCE |
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Effective date of registration: 20100813 Address after: 511700 Guangdong city of Dongguan province Dongcheng District mulberry Community Industrial Road No. 239 Patentee after: Dongguan Master LCD Monitors Co., Ltd. Address before: Taichung County, Taiwan, China Patentee before: Shenghua Science and Technology Co., Ltd. |
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