CN1313413A - Process for growing shaped sapphire - Google Patents
Process for growing shaped sapphire Download PDFInfo
- Publication number
- CN1313413A CN1313413A CN 00112144 CN00112144A CN1313413A CN 1313413 A CN1313413 A CN 1313413A CN 00112144 CN00112144 CN 00112144 CN 00112144 A CN00112144 A CN 00112144A CN 1313413 A CN1313413 A CN 1313413A
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- CN
- China
- Prior art keywords
- aluminium sesquioxide
- pulling rod
- crucible
- heating
- sapphire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
A process for growing sapphire includes such steps as loading mould, crystal-pulling rod and mixture of Al2O3 and ZrO2 into cruicible, putting the crucible in monocrystal furnace, heating to 1500 deg.c, keeping the temp, vacuumizing to 0.01 torrs, aerating argon gas to ordinary pressure, heating to smelt the charge, and starting the crystal-pulling rod. The resultant, sapphire features high quality, low cost and not cracking and can be used as the tube of gas discharge lamp.
Description
The present invention relates to a kind of growth technique of sapphire section bar.More specifically saying, is the growth technique of sapphire section bars such as sapphire electric gaseous discharging lamp fluorescent tube.
To at present, the sapphire electric gaseous discharging lamp fails to enter suitability for industrialized production always.Trace it to its cause, the one, present tubing adopts the guided mode pulling method to produce, and it is raw materials used to be useless boule.Useless boule needs could use after treatment.And treatment process is to carry out soaking and washing with hydrochloric acid.After the soaking and washing,, can't remove the impurity in it though can remove the impurity on useless boule surface.Like this, owing to contain impurity in the raw material, the sapphire section quality of producing is not high, easily bursts during sealing-in.In addition, useless boule price is higher, more than 100 yuan of per kilogram, and production cost is higher.
The object of the present invention is to provide a kind of process for growing shaped sapphire.With the sapphire section bar that this explained hereafter goes out, quality height, cost is low, can not burst during sealing-in.
Above-mentioned purpose of the present invention is realized by following technical solution.
Process for growing shaped sapphire of the present invention may further comprise the steps successively:
Earlier mould and crystal pulling rod are inserted in the crucible.Meanwhile, after aluminium sesquioxide and zirconium dioxide mixing, pour in the crucible.Wherein: the weight of zirconium dioxide is the 4-6% of aluminium sesquioxide;
The crucible that aluminium sesquioxide and titanium dioxide Zirconium compound and mould thereof, crystal pulling rod will be housed is again put into single crystal growing furnace;
Afterwards, to its heating, when furnace temperature rises to 1500 ℃, stop heating, and remain under this temperature value;
Afterwards, vacuumize, when the stove internal gas pressure reaches 10 * 10
-3After the holder, to its applying argon gas to normal pressure;
Again, continue, make the furnace charge fusing its heating;
At last, start crystal pulling rod, make the furnace charge of fusing grow into needed shaped sapphire.
Because the raw material that process for growing shaped sapphire of the present invention adopts is an aluminium sesquioxide, the purity height.With the sapphire section bar that this raw material production goes out, the quality height can not burst during sealing-in.Because the aluminium sesquioxide price is low, the per kilogram price only has tens yuan, makes raw material with it, can reduce production costs greatly again.
Below in conjunction with embodiment the present invention is described in further detail:
Earlier mould and crystal pulling rod are put into the tungsten crucible.Meanwhile, aluminium sesquioxide and zirconium dioxide are carried out pouring in the tungsten crucible behind the uniform mixing.Wherein: aluminium sesquioxide is 1: 0.05 with the ratio of the weight of zirconium dioxide, or 1: 0.04, also can be 1: 0.06.
The tungsten crucible that aluminium sesquioxide and zirconium dioxide compound and mould thereof, crystal pulling rod will be housed is again put into single crystal growing furnace, and shuts the single crystal growing furnace fire door.Afterwards, start water-cooling system, open vacuum tunnel, make system enter working order.
Then, single crystal growing furnace is heated.When furnace temperature rises to 1500 ℃, stop heating, and remain under this temperature value.
Vacuumize with vacuum pump, when the stove internal gas pressure reaches 10 * 10
-3During holder, close vacuum pump, stop to vacuumize.Afterwards,, when being charged to normal pressure and being the inside and outside pressure equilibrium of stove, turn off valve, stop applying argon gas the protection of its applying argon gas.
Again, continue to be heated to 2050 ℃ of stove Nei Wenduda, make the furnace charge fusing.
At last, start crystal pulling rod, make crystal growth become required section bar, as sapphire electric gaseous discharging lamp fluorescent tube etc.
In the foregoing description, the purity of aluminium sesquioxide is more than 99.9%.
Claims (2)
1. process for growing shaped sapphire is characterized in that may further comprise the steps successively:
Earlier mould and crystal pulling rod are inserted in the crucible; Meanwhile,
After aluminium sesquioxide and zirconium dioxide mixing, pour in the crucible; Wherein: the weight of titanium dioxide Zirconium is the 4-6% of aluminium sesquioxide;
The crucible that aluminium sesquioxide and zirconium dioxide compound and mould thereof, crystal pulling rod will be housed is again put into single crystal growing furnace;
Afterwards, to its heating, when furnace temperature rises to 1500 ℃, stop heating, and remain under this temperature value;
Afterwards, vacuumize, when the stove internal gas pressure reaches 10 * 10
-3After the holder, to its applying argon gas to normal pressure;
Afterwards, continue, make the furnace charge fusing its heating;
At last, start crystal pulling rod, make the furnace charge of fusing grow into needed shaped sapphire.
2. growth technique according to claim 1, the purity that it is characterized in that aluminium sesquioxide is more than 99.9%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 00112144 CN1313413A (en) | 2000-03-15 | 2000-03-15 | Process for growing shaped sapphire |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 00112144 CN1313413A (en) | 2000-03-15 | 2000-03-15 | Process for growing shaped sapphire |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1313413A true CN1313413A (en) | 2001-09-19 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 00112144 Pending CN1313413A (en) | 2000-03-15 | 2000-03-15 | Process for growing shaped sapphire |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1313413A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100436659C (en) * | 2007-01-17 | 2008-11-26 | 上海晶生实业有限公司 | Blue-jewel-crystal multi-crucible melt growth technolgoy |
| CN101906663A (en) * | 2010-08-09 | 2010-12-08 | 西峡县正弘单晶刚玉有限责任公司 | Blue ssuperindividual corundum and preparation method thereof |
| CN102286782A (en) * | 2011-09-15 | 2011-12-21 | 江苏华盛天龙光电设备股份有限公司 | Sapphire crystal growth method |
| CN102634845A (en) * | 2012-02-07 | 2012-08-15 | 徐州协鑫光电科技有限公司 | Method for heating and melting materials in growth of sapphire single crystals by Kyropoulos method and application thereof |
| CN102787352A (en) * | 2012-05-31 | 2012-11-21 | 俞后法 | Growth method of sapphire crystal |
-
2000
- 2000-03-15 CN CN 00112144 patent/CN1313413A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100436659C (en) * | 2007-01-17 | 2008-11-26 | 上海晶生实业有限公司 | Blue-jewel-crystal multi-crucible melt growth technolgoy |
| CN101906663A (en) * | 2010-08-09 | 2010-12-08 | 西峡县正弘单晶刚玉有限责任公司 | Blue ssuperindividual corundum and preparation method thereof |
| CN102286782A (en) * | 2011-09-15 | 2011-12-21 | 江苏华盛天龙光电设备股份有限公司 | Sapphire crystal growth method |
| CN102634845A (en) * | 2012-02-07 | 2012-08-15 | 徐州协鑫光电科技有限公司 | Method for heating and melting materials in growth of sapphire single crystals by Kyropoulos method and application thereof |
| CN102787352A (en) * | 2012-05-31 | 2012-11-21 | 俞后法 | Growth method of sapphire crystal |
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