CN1310180C - Capacitive fingerprint sensing device and producing method thereof - Google Patents
Capacitive fingerprint sensing device and producing method thereof Download PDFInfo
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- CN1310180C CN1310180C CNB031241832A CN03124183A CN1310180C CN 1310180 C CN1310180 C CN 1310180C CN B031241832 A CNB031241832 A CN B031241832A CN 03124183 A CN03124183 A CN 03124183A CN 1310180 C CN1310180 C CN 1310180C
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Abstract
The present invention relates to a capacitance type fingerprint sensor which can resist antistatic damage and prevent residual waste interference. The present invention comprises a basal plate, a plurality of flat plate electrodes, a metal net, a plurality of electrostatic discharge units, a plurality of welding pads and a protective layer, wherein the flat plate electrodes, the welding pads and the metal net are arranged at the same height on the basal plate and made of the same material; the electrostatic discharge units are respectively connected with the metal net and the grounding end and are exposed through a plurality of first openings so that the static electricity of fingers flows to the grounding end. Besides, the metal net is covered by the protective layer and is not exposed; the number of the electrostatic discharge units is far less than the number of the flat plate electrodes, which can reduce fingerprint images obtained by the residual waste interference.
Description
Technical field
The present invention system especially can antistatic destruction reach anti-residual dirty capacitance type fingerprint sensor and the manufacture method of disturbing thereof about a kind of about a kind of capacitance type fingerprint sensor and manufacture method thereof.
Background technology
Existing fingerprint reading method can utilize the finger presses that speckles with ink on paper, utilizes optical scanner to scan this paper so that fingerprint is imported in the computer again, then with data bank in fingerprint graph comparison.Yet therefore the disadvantage of said method can't satisfy the demand of more and more instant authentications for reaching the purpose of instant processing, for example: the networking authentication, ecommerce, portable electric product is maintained secrecy, IC-card personal identification, safety system or the like.
Instant fingerprint reading method just becomes the gordian technique in the biological identification market.Traditionally, can use the optical fingerprint sensor to read fingerprint immediately, yet it have the too huge shortcoming of volume.
For this reason, the chip-type fingerprint sensing device that utilizes silicon semiconductor in response to and give birth to, overcome the shortcoming of above-mentioned optical profile type sensor.Based on the consideration of silicon integrated circuit processing procedure, the capacitance type fingerprint sensor becomes the most direct and simple method.
On the structure, the capacitance type fingerprint sensor comprises a plurality of capacitance type sensing unit to be arranged with array way, during the sensing unit outside the finger contact is exposed to surperficial, and the capacitance curve that just can sensing finger line peak stays.Because the most of area of sensor all needs to be exposed to the external world, any close electrified body all may cause wherein short circuit or permanent damages.For this reason, the antistatic treatment on sensor surface just seems especially important.And also to take into account and prevent residual dirty disturbing effect image quality.
The method that prevents electrostatic breakdown of fingerprint sensing device sees also people's such as Tartagni the 6th, 114, No. 862 bulletins of United States Patent (USP) and Thomas at United States Patent (USP) the 6th, 515, No. 488 bulletins.
See also Fig. 1 to 3, above-mentioned electrostatic breakdown prevents that method system from utilizing and surrounds each capacitance type sensing unit and be exposed to outer tungsten wire netting 113 and be connected to earth terminal that will be directed at earth terminal near the static of object, this kind design can effectively solve electrostatic breakdown.The other problems yet the formation method of this tungsten wire netting 113 and design but can be derived.Plate electrode 112 all is positioned on the substrate 110 with tungsten wire netting 113, but is positioned at different height, and is to be formed in different manufacturing steps by different materials.In the deposition of tungsten metal and follow-up etchback step, form many small holes 108 on the protective seam 111 on sensor surface and cause defective, and problem such as can cause that stress is concentrated.When pointing the outside surface 109 of the careless shock sensor of nail, the destruction that can cause sensor.Moreover the structure of small hole 108 can make the protective seam surface form water wettability, therefore can spread when the moisture of finger contacts outside surface 109, and then make the image quality variation.For this reason, Thomas proposes by the deposition of monox 107 and follow-up cmp (CMP) processing procedure monox 107 to be filled up aforesaid small holes 108 and to reach smooth outside surface 109.Yet this measure makes the manufacture process too complex again, and is not suitable for the manufacturing course of general commercial wafer fab.
Again, above-mentioned derives from technology goes out to point the problem of residual dirty interference images quality.As shown in Figure 2, when pointing 1 (being considered as a virtual ground end) when touching the outside surface 109 of sensor, line peak 11 and plate electrode 112 formed inductance capacitance values are greater than line paddy 12 and plate electrode 112 formed inductance capacitance values.The static of finger 1 can discharge by tungsten wire netting 113, and the tungsten wire netting 113 that this kind is exposed fully will make residual dirty 114 ground connection from finger, form residual dirty electric capacity 115 indirectly and the interference images quality, as shown in Figure 3.
Summary of the invention
One object of the present invention system provides a kind of can antistatic destruction reach anti-residual dirty capacitance type fingerprint sensor and the manufacture method of disturbing thereof.
For reaching above-mentioned purpose; the invention provides a kind of can antistatic destruction and the anti-residual dirty capacitance type fingerprint sensor that disturbs, it comprises one and includes the silicon substrate of integrated circuit, a plurality of plate electrode, a wire netting, a plurality of static discharges unit, a plurality of weld pad and a protective seam.Described a plurality of plate electrode system is formed on this substrate in the mode of arrayed.This wire netting is arranged in length and breadth between described a plurality of plate electrode and with described a plurality of plate electrodes and flushes, and surrounds respectively this plate electrode, and this wire netting is connected to an earth terminal.Described a plurality of static discharge unary system is connected with this wire netting, and is formed between the adjacent plate electrode of the predetermined number in described a plurality of plate electrode, and the number of described a plurality of static discharges unit is less than the number of described a plurality of plate electrodes.A plurality of weld pads are input and the output as this capacitance type fingerprint sensor.These protection series of strata are covered in described a plurality of plate electrode and this wire netting fully; and the part is covered on described a plurality of static discharges unit and the described a plurality of weld pad; use and on described a plurality of static discharges unit, form the first many openings; and on described a plurality of weld pads, form a plurality of second openings, respectively the size of this first opening is less than the size of this second opening respectively.
For reaching above-mentioned purpose, the present invention also provide a kind of can antistatic destruction and the manufacture method of the anti-residual dirty capacitance type fingerprint sensor that disturbs, it comprises following steps basically: in one include form on the silicon substrate of integrated circuit one metal laminated; Remove the metal laminated of part, to form above-mentioned a plurality of plate electrodes, wire netting, a plurality of static discharges unit and a plurality of weld pad; Deposition one protective seam on this metal laminated and this substrate; On this protective seam, form a photoresist layer; Form a plurality of first windows and a plurality of second window in this photoresist layer, so that this protective seam exposes from described a plurality of first windows and described a plurality of second window; This protective seam that exposes is carried out dry-etching, a plurality of second openings that correspond to a plurality of first openings of described a plurality of first windows and correspond to described a plurality of second windows with formation, and described a plurality of weld pad is exposed by described a plurality of second openings, described a plurality of static discharges unit is exposed by described a plurality of first openings, and respectively the size of this first opening is less than the size of this second opening respectively; And remove this photoresist layer.
Fingerprint sensing device of the present invention can antistatic destruction sensing unit and is effectively prevented residual dirty the interference and influence image quality.
Description of drawings
Fig. 1 shows the synoptic diagram of surface portion on a kind of existing fingerprint sensing device.
Fig. 2 shows the synoptic diagram that a kind of existing fingerprint sensing device contacts with finger.
Residual flecked synoptic diagram above the fingerprint sensing device of Fig. 3 displayed map 2.
Fig. 4 demonstration utilizes capacitance type fingerprint sensor of the present invention to read the synoptic diagram of finger print.
Fig. 5 shows the local schematic top plan view according to the capacitance type fingerprint sensor of first embodiment of the invention.
Fig. 6 shows along the cross-sectional schematic of the capacitance type fingerprint sensor of the profile line 6-6 of Fig. 5.
The enlarged diagram of the weld pad of Fig. 7 displayed map 6.
The enlarged diagram of the discharge cell of Fig. 8 displayed map 6.
Fig. 9 shows the schematic top plan view according to the capacitance type fingerprint sensor of second embodiment of the invention.
Figure 10 shows the schematic top plan view according to the capacitance type fingerprint sensor of third embodiment of the invention.
Figure 11 A and 11B show that respectively capacitance type fingerprint sensor of the present invention is in the sensing result that is applied in the static front and back.
Figure 12 A to 12E shows the manufacturing step of capacitance type fingerprint sensor of the present invention respectively.
The component symbol explanation:
1～finger, 2～capacitance type fingerprint sensor
11～line peak 11a～capacitance curve
12～line paddy, 20～capacitance type sensing unit
21～substrate, 22～plate electrode
22N～normal electrode 225～sacrificial electrode
23～wire netting, 24～static discharge unit
25～weld pad, 26～protective seam
27～the first openings, 28～the second openings
30～aluminum metal lamination, 40～photoresist layer
41～the first windows, 42～the second windows
50～metal laminated 51～titanium layer
52～aluminium alloy layer, 53～titanium nitride layer
107～monox, 108～hole
109～outside surface, 110～substrate
111～protective seam, 112～plate electrode
113～tungsten wire netting 114～residual dirt
115～residual dirty electric capacity
Embodiment
Fig. 4 demonstration utilizes capacitance type fingerprint sensor of the present invention to read the synoptic diagram of finger print.As shown in Figure 4, this fingerprint sensing device 2 comprises a plurality of capacitance sensing unit 20 with two dimension (2D) arrayed.When finger 1 this sensor 2 of contact, the irregularly shaped line peak (Ridge) of pointing 1 surface can contact with the capacitance sensing unit 20 of part, and stays the capacitance curve 11a corresponding to this line peak 11 on this sensor 2.By reading the shape of capacitance curve 11a, just can recognize the shape at original line peak 11.
Fig. 5 shows the local schematic top plan view according to the capacitance type fingerprint sensor of first embodiment of the invention.Fig. 6 shows along the cross-sectional schematic of the capacitance type fingerprint sensor of the line 66 of Fig. 5.Shown in Fig. 5 and 6, capacitance type fingerprint sensor 2 of the present invention comprises one basically and includes the silicon substrate 21 of integrated circuit, a plurality of plate electrode 22, a wire netting 23, a plurality of static discharges unit 24, a plurality of weld pad 25, an and protective seam 26.Described a plurality of plate electrode 22 is that the mode with arrayed is formed on this substrate 21.Wire netting 23 is to be formed between described a plurality of plate electrode 22, and flushes with described a plurality of plate electrodes 22, and surrounds respectively this plate electrode 22.In detail, wire netting 23 is to be arranged in length and breadth between described a plurality of plate electrode 22 in the crack.Described a plurality of plate electrode 22 and described a plurality of wire netting 23 separate one predetermined between distance.Described a plurality of weld pad 25 is input and the output as this capacitance type fingerprint sensor 2.This wire netting 23 is connected to an earth terminal GND, mainly is to avoid sensor to be subjected to electrostatic breakdown with electrostatic guide to earth terminal GND.Described a plurality of static discharges unit 24 is to be connected with this wire netting 23, and then is connected to earth terminal.The distance D of adjacent static discharge unit 24 is much larger than distance between the adjacent plate electrode 22, so the number of described a plurality of static discharges unit 24 is much smaller than the number of described a plurality of plate electrodes 22.
Can know from Fig. 5 and to find out that in order to make static discharge unit 24, the present invention sacrifices the sensing area of some plate electrode under the situation that does not influence the sensing effect.So, described a plurality of plate electrode 22 comprises a plurality of sacrificial electrode 22S and a plurality of normal electrode 22N, described a plurality of sacrificial electrode 22S system is adjacent with described a plurality of static discharges unit 24, and respectively the size of this sacrificial electrode 22S less than the size of this normal electrode 22N respectively.In present embodiment, respectively this static discharge unit 24 is only adjacent with a sacrificial electrode 22S.So in nine plate electrodes 22, have only a sacrificial electrode 22S.
When pointing near sensor, static can flow to earth terminal GND from first opening 27 via wire netting 23.In present embodiment, the optimization space D of two adjacent static discharge unit 24 is 500 to 1000 microns.
The enlarged diagram of the weld pad of Fig. 7 displayed map 6.The enlarged diagram of the discharge cell of Fig. 8 displayed map 6.Shown in Fig. 7 and 8, aluminum metal lamination 30 comprises a titanium layer 51 that is positioned on this substrate 21, is positioned at the aluminium alloy layer 52 on this titanium layer 51, and is positioned at the titanium nitride layer 53 on this aluminium alloy layer 52.Aluminium alloy layer 52 is to be exposed by this first opening 27 respectively.Each weld pad 25 comprises a titanium layer 51 that is positioned on this substrate 21, an aluminium alloy layer 52 that is positioned on this titanium layer 51 and exposes by this second opening 28 respectively, and be positioned on this aluminium alloy layer 52 and around one of this second opening 28 titanium nitride layer 53 respectively.It should be noted that, because the characteristic of the etch process of following explanation, make an interior thickness T1 of this titanium nitride layer 53 in this first opening 27 respectively less than a peripheral thickness T2 of this titanium nitride layer 53, the titanium nitride layer 53 of this second opening 28 can be removed in fact fully and be arranged in respectively.
Fig. 9 shows the schematic top plan view according to the capacitance type fingerprint sensor of second embodiment of the invention.The sensor system of Fig. 9 is similar with Fig. 5, and difference is that respectively this static discharge unit 24 of Fig. 9 is only adjacent with two sacrificial electrode 22S.That is two adjacent plate electrodes 22 respectively sacrifice a zone and use for static discharge unit 24.
Figure 10 shows the schematic top plan view according to the capacitance type fingerprint sensor of third embodiment of the invention.The sensor system of Figure 10 is similar with Fig. 5, and difference is that respectively this static discharge unit 24 of Figure 10 is only adjacent with four sacrificial electrode 22S.That is four adjacent plate electrodes 22 respectively sacrifice a zone and use for static discharge unit 24.
Figure 11 A and 11B show the sensing result of capacitance type fingerprint sensor of the present invention in the front and back that are applied in static respectively.The test condition that the present invention adopts is the static that respectively applies 10 times ± 20KV under the air mode (air mode), and spacing frequency is 1 second.Shown in Figure 11 A and 11B, the sensing result of two figure does not have significantly destruction relatively down, and the expression sensor still can normal operation.Therefore, the Electrostatic Discharge protective capacities of fingerprint sensing device of the present invention can reach more than the 20KV, and the internal circuit of sensor can not be damaged.
Figure 12 A to 12E shows the manufacturing step of capacitance type fingerprint sensor of the present invention respectively.
Referring to Figure 12 A, at first include on the silicon substrate 21 of integrated circuit and form one metal laminated 50 in one.
Then, see also Figure 12 B, metal laminated 50 of part is removed, to form a plurality of plate electrodes 22, a wire netting 23, a plurality of static discharges unit 24, to reach a plurality of weld pads 25.The structure of said elements and mutual relation are illustrated in, and no longer describe in detail in this.
Then, see also Figure 12 C, in this metal laminated 50 with this substrate 21 on the deposition one protective seam 26.In the present embodiment, protective seam 26 structures have comprised the lamination of an one silica layer and a silicon nitride layer.So, can in this metal laminated 50 with this substrate 21 on deposit one silica layer, then on this silicon oxide layer the deposition one silicon nitride layer.
Then, see also Figure 12 D, on this protective seam 26, form a photoresist layer 40; Afterwards, form a plurality of first windows 41 and a plurality of second window 42, so that this protective seam 26 exposes with described a plurality of second windows 42 from described a plurality of first windows 41 in this photoresist layer 40.
Then; see also Figure 12 E; this protective seam 26 that exposes is carried out dry-etching; a plurality of second openings 28 that correspond to a plurality of first openings 27 of described a plurality of first windows 41 and correspond to described a plurality of second windows 42 with formation; and described a plurality of weld pad 25 is exposed by described a plurality of second openings 28; described a plurality of static discharges unit 24 is exposed by described a plurality of first openings 27, and respectively the size of this first opening 27 is much smaller than the size of this second opening 28 respectively.In this dry ecthing procedure, when removing this titanium nitride layer 53 that is arranged in described a plurality of second openings 28 fully, can remove the some of this titanium nitride layer 53 that is arranged in described a plurality of first openings 27, so that an interior thickness T1 of this titanium nitride layer 53 in this first opening 27 respectively is less than a peripheral thickness T2 of this titanium nitride layer 53, as shown in Figure 8.It should be noted that this protective seam 26 more can comprise above-mentioned high rigidity layer, is positioned on this titanium nitride layer 53.Under this situation, it is the part of protective seam 26 that the high rigidity layer can be considered as.
Then, this photoresist layer 40 is removed, to form structure as shown in Figure 6.
By above-mentioned structure and method, because wire netting 23 is to design in protective seam 26 belows, so can not be exposed in the etching environment again after protective seam 26 depositions are finished.Even the process forming opening 27 and 28 also has the protection of photoresist layer 40, so do not have any impaired above the protective seam 26.By this, the surface of protective seam 26 just can be just like the small hole of known techniques, causes easily that stress is concentrated, surface hydrophilicity, ESD destroy, improper use damages, and the situation of residual dirty interference images.
In addition, first opening 27 that uses for static discharge unit 24 is to be to design in same light shield with second opening 28 for weld pad 25 uses, but its size then has quite big gap.For example, the size of first opening 27 is generally 5 to 10 microns, and the size of second opening 28 is generally 100 to 150 microns.So so in the process that opening forms, not only can remove protective seam 26 fully and form second opening 28, uppermost titanium nitride layer 53 can also be removed fully and aluminium alloy layer 52 is exposed fully, in order to follow-up routing action.Haveing the knack of this skill person should understand easily, and forming the employed dry-etching mode of opening all has load effect (loading effect), that is to say that opening smaller etching speed is slower.The present invention utilizes this characteristic, by the keyholed back plate of time, is kept the titanium nitride layer 53 (thickness is about 0.1 micron) of the part in first opening 27.Because titanium nitride layer 53 is difficult for oxidation, and is corrosion-resistant, be fit to long-term the use, be fit to be exposed in the air.So, just can use and avoid electrostatic breakdown near the static of the object of sensor by first opening 27, titanium nitride layer 53 and aluminium alloy layer 52 line conductings to earth terminal.
Above-mentioned process design does not need to use the aforementioned prior art with high complexity fully, and can utilize commerce to make sensor of the present invention with the normal process and the material of integrated circuit factory fully.
Advantage of the present invention not only is the ESD protective capacities, only utilize simultaneously the minority static discharge unit of long spacing just can finish the ESD protection, even after using residual dirt is arranged, most of residual dirt also is independently, be not connected, reduced many residual dirty electric capacity interference that image caused with wire netting 23.
The specific embodiment that is proposed in the detailed description of preferred embodiment is only in order to convenient explanation technology contents of the present invention, but not with narrow sense of the present invention be limited to the foregoing description, not exceeding the many variations enforcement that spirit of the present invention is done, all belong to scope of the present invention.
Claims (18)
1, a kind of capacitance type fingerprint sensor comprises:
One includes the silicon substrate of integrated circuit;
A plurality of plate electrodes are formed on this substrate in the mode of arrayed;
One wire netting is arranged in length and breadth between described a plurality of plate electrode and with described a plurality of plate electrodes and flushes, and surrounds respectively this plate electrode, and this wire netting is connected to an earth terminal;
A plurality of static discharges unit is connected with this wire netting, and is formed between the adjacent plate electrode of the predetermined number in described a plurality of plate electrode, and the number of described a plurality of static discharges unit is less than the number of described a plurality of plate electrodes;
A plurality of weld pads, it is positioned on this silicon substrate, in order to input and the output as this capacitance type fingerprint sensor; And
One protective seam; be covered in described a plurality of plate electrode and this wire netting fully; and the part is covered on described a plurality of static discharges unit and the described a plurality of weld pad; use and on described a plurality of static discharges unit, form the first many openings; and on described a plurality of weld pads, form a plurality of second openings, respectively the size of this first opening is less than the size of this second opening respectively.
2, capacitance type fingerprint sensor as claimed in claim 1 is characterized in that: described plate electrode and described wire netting comprise identical materials.
3, capacitance type fingerprint sensor as claimed in claim 2 is characterized in that: described respectively this plate electrode comprises an aluminum metal lamination.
4, capacitance type fingerprint sensor as claimed in claim 3 is characterized in that: described aluminum metal lamination comprises:
One titanium layer is positioned on this substrate;
One aluminium alloy layer is positioned on this titanium layer; And
The titanium nitride layer is positioned on this aluminium alloy layer, and is exposed by this first opening respectively.
5, capacitance type fingerprint sensor as claimed in claim 2 is characterized in that: it is metal laminated that described respectively this plate electrode comprises a bronze medal.
6, capacitance type fingerprint sensor as claimed in claim 1, it is characterized in that: described plate electrode comprises a plurality of sacrificial electrodes and a plurality of normal electrode, described a plurality of sacrificial electrode is adjacent with described static discharge unit, and respectively the size of this sacrificial electrode less than the size of this normal electrode respectively.
7, capacitance type fingerprint sensor as claimed in claim 6 is characterized in that: described respectively this static discharge unit is only adjacent with a sacrificial electrode.
8, capacitance type fingerprint sensor as claimed in claim 6 is characterized in that: described respectively this static discharge unit is only adjacent with two sacrificial electrodes.
9, capacitance type fingerprint sensor as claimed in claim 6 is characterized in that: described respectively this static discharge unit is only adjacent with four sacrificial electrodes.
10, capacitance type fingerprint sensor as claimed in claim 6 is characterized in that: described protective seam is piled up by an one silica layer and a silicon nitride layer to be formed.
11, capacitance type fingerprint sensor as claimed in claim 6 is characterized in that: wherein the spacing of two adjacent static discharge unit is in fact between 500 to 1000 microns.
12, capacitance type fingerprint sensor as claimed in claim 1 is characterized in that: more comprise
One high rigidity layer is positioned on this protective seam, and this high rigidity layer comprises and is selected from one of quasi cobalt carbon diaphragm, silicon carbide film, barium titanate film, Strontium titanate films and tantalum-oxide film.
13, a kind of manufacture method of capacitance type fingerprint sensor comprises following steps:
In one include form on the silicon substrate of integrated circuit one metal laminated;
Remove the metal laminated of part, to form:
A plurality of plate electrodes are formed on this substrate in the mode of arrayed;
One wire netting is arranged in length and breadth between described a plurality of plate electrode and with described a plurality of plate electrodes and flushes, in order to surround respectively this plate electrode;
A plurality of static discharges unit is connected with this wire netting, and is formed between the adjacent plate electrode of predetermined number of described a plurality of plate electrodes, and the number of described a plurality of static discharges unit is less than the number of described a plurality of plate electrodes; And
A plurality of weld pads, it is positioned on this silicon substrate, in order to input and the output as this capacitance type fingerprint sensor;
Deposition one protective seam on this metal laminated and this substrate;
On this protective seam, form a photoresist layer;
Form a plurality of first windows and a plurality of second window in this photoresist layer, so that this protective seam exposes from described a plurality of first windows and described a plurality of second window;
This protective seam that exposes is carried out dry-etching, a plurality of second openings that correspond to a plurality of first openings of described a plurality of first windows and correspond to described a plurality of second windows with formation, and described a plurality of weld pad is exposed by described a plurality of second openings, described a plurality of static discharges unit is exposed by described a plurality of first openings, and respectively the size of this first opening is less than the size of this second opening respectively; And
Remove whole photoresist layers.
14, the manufacture method of capacitance type fingerprint sensor as claimed in claim 13 is characterized in that: institute is set forth in and forms the metal laminated following steps that comprise on the substrate:
On this substrate, form a titanium layer;
On this titanium layer, form an aluminium alloy layer; And
On this aluminium alloy layer, form the titanium nitride layer.
15, the manufacture method of capacitance type fingerprint sensor as claimed in claim 14 is characterized in that: describedly the protective seam that exposes is carried out dry-etching comprise following steps:
Remove this titanium nitride layer that is arranged in described a plurality of second openings fully; And
Remove the some of this titanium nitride layer that is arranged in described a plurality of first openings, so that an interior thickness of this titanium nitride layer in this first opening respectively is less than a peripheral thickness of this titanium nitride layer.
16, the manufacture method of capacitance type fingerprint sensor as claimed in claim 13 is characterized in that: the step of deposition one protective seam on metal laminated and the substrate that is set forth in comprises:
On this metal laminated and this substrate, deposit one silica layer; And
Deposition one silicon nitride layer on this silicon oxide layer.
17, the manufacture method of capacitance type fingerprint sensor as claimed in claim 16 is characterized in that: the step of deposition one protective seam on metal laminated and the substrate that is set forth in more comprises: deposition one high rigidity layer on this silicon nitride layer.
18, the manufacture method of capacitance type fingerprint sensor as claimed in claim 17 is characterized in that: described high rigidity layer comprises and is selected from one of quasi cobalt carbon diaphragm, silicon carbide film, barium titanate film, Strontium titanate films and tantalum-oxide film.
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| CNB031241832A CN1310180C (en) | 2003-05-06 | 2003-05-06 | Capacitive fingerprint sensing device and producing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CNB031241832A CN1310180C (en) | 2003-05-06 | 2003-05-06 | Capacitive fingerprint sensing device and producing method thereof |
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| CN1310180C true CN1310180C (en) | 2007-04-11 |
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Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN100369048C (en) * | 2005-07-21 | 2008-02-13 | 祥群科技股份有限公司 | Structure of slide fingerprint sensing chip with anti-static function and forming method |
| CN101216877B (en) * | 2007-01-04 | 2011-05-11 | 神盾股份有限公司 | Sliding type fingerprint sensing element and its method of preparation |
| CN101676842B (en) * | 2008-09-19 | 2013-07-24 | 群创光电股份有限公司 | Method and device for sensing electric discharge of circuit, touch panel and electronic device |
| CN102682271B (en) * | 2011-03-18 | 2015-05-27 | 映智科技股份有限公司 | Electrostatic damage protective structure of capacitor-based fingerprint integrated circuit |
| TWI486860B (en) * | 2013-03-18 | 2015-06-01 | Chih Chung Lin | Touch panel |
| CN103824071A (en) * | 2014-02-21 | 2014-05-28 | 江苏恒成高科信息科技有限公司 | Electrostatic capacitance detecting type fingerprint reading sensor with electrostatic discharge function |
| US9152841B1 (en) * | 2014-03-24 | 2015-10-06 | Fingerprint Cards Ab | Capacitive fingerprint sensor with improved sensing element |
| CN105320922B (en) * | 2014-08-04 | 2018-07-06 | 旭景科技股份有限公司 | For strengthening the structure of the method for fingerprint sensor surface characteristic and application this method |
| TWI605392B (en) * | 2015-03-20 | 2017-11-11 | 茂丞科技股份有限公司 | Suspended capacitive fingerprint sensor and method of manufacturing such sensor |
| CN106934320B (en) * | 2015-12-29 | 2020-03-17 | 小米科技有限责任公司 | Fingerprint identification method and device |
| CN111835896B (en) * | 2020-06-10 | 2021-10-12 | 深圳市锐欧光学股份有限公司 | Cell-phone camera apron coating film structure |
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| CN1278347A (en) * | 1997-05-16 | 2000-12-27 | 奥森泰克公司 | Fingerprint sensor including antisotropic dielectric coating and associated method |
| CN1283833A (en) * | 1999-08-09 | 2001-02-14 | 精工电子有限公司 | Fingerprint reading device |
| US6370965B1 (en) * | 1999-09-24 | 2002-04-16 | U.S. Philips Corporation | Capacitive sensing array devices |
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|---|---|---|---|---|
| CN1278347A (en) * | 1997-05-16 | 2000-12-27 | 奥森泰克公司 | Fingerprint sensor including antisotropic dielectric coating and associated method |
| CN1283833A (en) * | 1999-08-09 | 2001-02-14 | 精工电子有限公司 | Fingerprint reading device |
| US6370965B1 (en) * | 1999-09-24 | 2002-04-16 | U.S. Philips Corporation | Capacitive sensing array devices |
| US6518083B2 (en) * | 2001-01-31 | 2003-02-11 | Nippon Telegraph And Telephone Corporation | Surface shape recognition sensor and method of manufacturing the same |
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