CN1310082C - Warming up method for optical compensation bending mode liquid crystal display - Google Patents
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Abstract
The present invention relates to a machine heating method for an optical compensation bending (OCB) mode liquid crystal display. The liquid crystal display is provided with a pixel unit array, wherein each pixel unit comprises a thin film transistor; the thin film transistor determines whether switching on according to grid signals of a grid terminal, and data signals of a source electrode are transferred to a pixel electrode; a common electrode corresponding to one side of the pixel electrode is arranged, and a liquid crystal layer is clamped between the pixel electrode and the common electrode. The method at least comprises the following steps: the source electrode of the thin film transistor is arranged in a floating manners; the grid signals are applied to the grid electrode. Thereby, the voltage phase of the pixel electrode can be approximately coupled with the phase of the grid signals, and the conversion of liquid crystal molecules in the liquid crystal layer can be accelerated from an oblique unfolding state to a bending state.
Description
Technical field
The present invention and a kind of optical compensation curved (optical compensated bend; OCB) type of drive of mode LCD (OCB mode LCD) is relevant, particularly a kind of position with its grid voltage of thin film transistor (TFT) is accurate, be coupled to the method for pixel capacitors (pixel), with quicken liquid crystal molecule from oblique exhibition (splay) state exchange to bending (bend) state.
Background technology
Quick progress along with the thin film transistor (TFT) manufacturing technology, advantages such as LCD is frivolous owing to having possessed, power saving, no width of cloth ray, and a large amount of being applied in the various electronic products such as personal digital aid (PDA) (PDA), mobile computer, digital camera, Video Camera, mobile phone.Add the positive input research and development of industry and adopt the production equipment that maximizes, the quality of LCD is constantly promoted, and the lasting decline of price, more make the application of LCD enlarge rapidly.
In order further to improve the reaction rate and the augmentation visual angle of liquid crystal layer, present LCD is set about at the material behavior of liquid crystal molecule, and is designed three kinds of main improvement modes in making.These three kinds of improvement modes have comprised: (1) adopts vertical orientation (Vertical Alignment; VA) liquid crystal mode; (2) liquid crystal molecule of exploitation low-viscosity; And (3) adopt optical compensation curved (OCB) pattern.Wherein, the mode of vertical orientation is by the surface configuration that changes alignment film, make liquid crystal molecule along alignment film surface arranged distribution, thus, when applying a voltage to pixel capacitors (pixelelectrode), liquid crystal molecule can rotate rapidly and present vertical arrangement.As for, the mode of exploitation low-viscosity liquid crystal material then is that the viscosity that is conceived to liquid crystal reaction time and liquid crystal molecule presents proportional relation, therefore when the viscosity of liquid crystal molecule reduced, its reaction time just can shorten.
As for, for adopting the LCD of ocb mode, the liquid crystal molecule that is distributed in upper and lower glass baseplate surface is parallel orientation, but the liquid crystal molecule of internal layer is non-warping, just arrange at a plane inner bending, this kind arrangement mode can make light produce birefringence, be to add twin shaft polarizer (Biaxial Retardation Film), can compensate each axial differing, and overcome the visual angle and be subjected to the influence that liquid crystal molecules tilt causes changes in optical properties, therefore the effect at wide visual angle can be provided.In addition, because the liquid crystal molecule in the ocb mode is a bend alignment, need not be as the liquid crystal molecule of TN pattern, need overcome backflow (Backflow) retardation that changes aligned twisted, therefore adopt the LCD of ocb mode, its reaction rate can be reduced to 1～10ms, much smaller than the reaction time (about 50ms) of traditional TN liquid crystal mode.
Have above-mentioned advantage although it should be noted that the LCD of ocb mode, on using, many defectives are arranged still.For example, existing ocb mode liquid crystal display often needs one long hot machine (warm-up) period, just can make the liquid crystal molecule in the liquid crystal layer, by oblique exhibition (splay) state exchange to the bending that really will operate (bend) state.For quicken liquid crystal molecule by oblique exhibition state exchange to case of bending, in the present ocb mode liquid crystal display design, tend to apply high voltage at the liquid crystal layer two ends, quicken to drive the rotation of liquid crystal molecule.
Please refer to Fig. 1, this figure has shown the circuit structure of unit pixel in the LCD.This unit pixel is mainly used as switch by a thin film transistor (TFT) 10.Wherein, the grid of thin film transistor (TFT) 10 is to be connected in grid drive chip (Gate Driver) 13 via a scanning linear 12, source electrode then is connected in source driving chip (Source Driver) 15 via a data line 14, then is connected to auxiliary capacitor C as for its drain electrode
StWith pixel capacitors (pixel electrode) 16.With respect to the opposite side of pixel capacitors 16, then be provided with community electrode (common electrode) 17.One liquid crystal layer 18 is just in time inserted also clamping between pixel capacitors 16 and common electrode 17.When grid drive chip 13 output scan signal (Vg), during with thin film transistor (TFT) 10 conductings, from the data-signal (V of source driving chip 15
Data), can be sent to pixel capacitors 16 via drain electrode end, and produce a cross-pressure, and make liquid crystal layer 18 produce required image with common electrode 17.
In order to apply high voltage in pixel capacitors 16, rotate with the liquid crystal molecule that quickens ocb mode, in the existing LCD, tend to change the design of source driving chip 15, make its ability (for example, increasing to 15 volts) by 5 volts with output HIGH voltage; Or the design of change common electrode 17, make its voltage level reduce (for example, being reduced to-16 volts) by 6 volts, so that between pixel capacitors 16 and common electrode 17, produce big cross-pressure.But thus, may need to change the high pressure manufacturing process specification of chip for driving or the design that changes whole pixel, and cause the increase of whole cost and design difficulty.
Summary of the invention
The present invention has disclosed the hot machine mode of a kind of optical compensation curved (OCB) mode LCD, by the position of its grid voltage of thin film transistor (TFT) is accurate, be coupled to pixel capacitors (pixel), can quicken liquid crystal molecule from oblique exhibition (splay) state exchange to crooked (bend) state.
The present invention has disclosed the hot machine method of a kind of optical compensation curved (OCB) mode LCD, wherein LCD has the pixel unit array, and each this pixel unit has comprised a thin film transistor (TFT), whether thin film transistor (TFT) can determine conducting according to the high and low current potential of gate terminal signal, and make the data-signal can be via source electrode, drain electrode, be sent to pixel capacitors, with respect to the opposite side of pixel capacitors and have and use electrode altogether, and a liquid crystal layer clamping is between pixel capacitors and common electrode.Hot machine method provided by the invention can be divided into two sections.In the hot machine of the leading portion time, the float source electrode of thin film transistor (TFT), the signal that is continuously applied noble potential simultaneously makes the voltage level of pixel capacitors be coupled in the high levels of signal in grid, and can quicken liquid crystal molecule in the liquid crystal layer by oblique exhibition state exchange to case of bending.As for, in the hot machine of the back segment time, then to recover the data-signal of source electrode and supply with, the signal that is continuously applied noble potential simultaneously is in grid, and via the source electrode and the drain electrode of thin film transistor (TFT), input data signal is to pixel capacitors.
In addition, the present invention also provides another kind of two stage hot machine methods, in the hot machine of the leading portion time, the float source electrode of thin film transistor (TFT), the signal that is continuously applied noble potential simultaneously is in grid, the voltage level of pixel capacitors can be coupled be similar to the high levels of signal, and can quicken liquid crystal molecule in the liquid crystal layer by oblique exhibition state exchange to case of bending.As for, in the hot machine of the back segment time, then recover the data-signal of source electrode and supply with, put on grid with the signal recurrent pulse simultaneously, with the conducting membrane transistor, and by source electrode and drain electrode, input data signal is to pixel capacitors.
In addition, the present invention also provides another kind of hot machine method, at hot machine in the time, the float source electrode of thin film transistor (TFT), grid then is to supply with pixel capacitors in regular turn in the general mode that scans to scan signal (Vg), the voltage level of pixel capacitors can be coupled be similar to the high levels of signal, and can quicken liquid crystal molecule in the liquid crystal layer by oblique exhibition state exchange to case of bending.
Description of drawings
Fig. 1 has shown the circuit structure of unit pixel in the present LCD;
Fig. 2 has shown makes the source electrode of thin film transistor (TFT) be in floating state among the present invention, so that the signal of high levels can be coupled to the situation of pixel capacitors by coupling capacitance between gate-to-drain;
Fig. 3 has shown that the present invention is with timing controller output synchronizing signal and data-signal, the situation of control grid drive chip and source driving chip;
Fig. 4 has shown in the first embodiment of the invention, the signal waveform that source driving chip and grid drive chip are exported;
Fig. 5 shows in the second embodiment of the invention, the signal waveform that source driving chip and grid drive chip are exported;
Fig. 6 shows in the third embodiment of the invention, the signal waveform that source driving chip and grid drive chip are exported;
Fig. 7 shows in the fourth embodiment of the invention, the signal waveform that source driving chip and grid drive chip are exported;
Fig. 8 shows in the fifth embodiment of the invention, the signal waveform that source driving chip and grid drive chip are exported.
Symbol description:
Thin film transistor (TFT)～10
Scanning linear～12
Grid drive chip～13
Data line～14
Source driving chip～15
Pixel capacitors～16
Common electrode～17
Liquid crystal layer～18
Timing controller～20
Embodiment
The invention provides the hot machine method of a kind of optical compensation curved (OCB) mode LCD.This LCD has the pixel unit array, and each pixel unit has comprised a thin film transistor (TFT), and this thin film transistor (TFT) can be according to the current potential of signal, determines whether conducting, make the data-signal on the data line, can be sent to pixel capacitors via transistorized source electrode and drain electrode.By the source electrode of (floating) thin film transistor (TFT) of floating, can make the voltage level of pixel capacitors, via gate-to-drain coupling capacitance (C
Gd), it is accurate that coupling is similar to the position of signal.Thus, when signal has noble potential, be coupled to the high voltage level of pixel capacitors, can quicken liquid crystal molecule by oblique exhibition state exchange to case of bending.Relevant of the present invention be described in detail as follows described.
Please refer to Fig. 1, as aforementioned, circuit structure with unit pixel in the present LCD is an example, the grid of thin film transistor (TFT) 10 is to be connected in grid drive chip (GateDriver) 13 via scanning linear 12, source electrode then is connected in source driving chip (SourceDriver) 15 via data line 14, and drain electrode then is connected to auxiliary capacitor C respectively
StWith pixel capacitors (pixelelectrode) 16.With the nmos pass transistor in scheming is example, when the signal (Vg) of grid drive chip 13 output when having high levels, can be with thin film transistor (TFT) 10 conductings, and make the data-signal (V of source driving chip 15 outputs
Data), put on the pixel capacitors 16 via source electrode, drain electrode, and make liquid crystal layer 18 produce required image.
It should be noted that above-mentioned data-signal (V
Data) the position accurate, size often has only several volts (～5 volts), when therefore putting on the pixel capacitors 16, can't make the liquid crystal molecule in the liquid crystal layer 18 be converted to duty rapidly.Compared to this, general between between-5～20 volts position standard by the signal (Vg) of grid drive chip 13 outputs, and the signal (V of noble potential
Gh) nearly tens volts position accurate (～15 volts).Be with, by noble potential (V with signal
Gh) be coupled to pixel capacitors 16, can quicken liquid crystal molecule by oblique exhibition state exchange to case of bending, and shorten hot machine time of whole LCD.
Please refer to Fig. 2, the hot motor speed of optical compensation curved in order to accelerate (OCB) mode LCD in hot machine method of the present invention, is to make the source electrode of thin film transistor (TFT) be in (floating) state of floating earlier, to cut off data-signal (V
Data) supply.Then, apply the signal (V of noble potential again
Gh) in grid.At this moment, because signal (V
Gh) the position accurate, can be by coupling capacitance (C between gate-to-drain
Gd), be coupled on the pixel capacitors 16, so the voltage level on the pixel capacitors 16, can be similar to signal (V
Gh) the position accurate.For example, as signal (V
Gh) when being 15 volts, the voltage that is coupled on the pixel capacitors 16 has 13.6 volts position standard approximately.Thus, the pressure reduction that is across between pixel capacitors 16 and common electrode 17 (～0 volt) can be up to 13.6 volts, and can effectively quicken liquid crystal molecule in the liquid crystal layer 18 by oblique exhibition state exchange to case of bending.
What particularly point out is, when using hot machine method of the present invention, does not need to increase in addition the high pressure manufacturing process of chip for driving, and can utilize existing grid drive chip 13 to reach with source driving chip 15.Please refer to Fig. 3, because in present LCD design, therefore chip for driving 13 and 15 all is to operate by a sequential control chip (ASIC IC), when using hot machine method of the present invention, as long as revise the control signal of timing controller 20.For example, by synchronizing signal and the data-signal of revising timing controller 20 outputs, the output of the data of may command source driving chip 15 is in floating state, makes the signal of grid drive chip 13 maintain noble potential simultaneously.
Please refer to Fig. 4, this figure has shown in the first embodiment of the present invention, the signal waveform that source driving chip 15 and grid drive chip 13 are exported.Wherein, source driving chip 15 has a LD pin, and the position that has " ON " when the LD signal of exporting is punctual, and expression source driving chip 15 energy breech locks are sent to the data-signal (latch data to pixel) of pixel capacitors.Be with, when beginning to carry out hot machine program, can come the latch data signal by output LD signal, make the data-signal output terminal (no matter being odd-numbered line or even number line) of source driving chip 15 produce high impedance, and present floating state.
On the other hand, then have an Xon pin on grid drive chip 13, the grid that can control all thin film transistor (TFT)s simultaneously is in the state of noble potential.When the Xon signal was " OFF ", all signals all can maintain noble potential V
GhAs shown in FIG., in the time, the Xon signal all maintains the state of " OFF " at whole hot machine, make each bar scanning linear (X1, X2 ... the signal X5) maintains high levels V always
GhState.At this moment, because the data-signal (V of source driving chip 15
Data) output presents floating state, therefore for thin film transistor (TFT) 10, it is used for the source electrode of transmission of data signals, also is in the floating state of high impedance.Thus, the voltage level of pixel capacitors 16 can be by coupling capacitance C between gate-to-drain
Gd, and coupling is corresponding to the signal (V of noble potential
Gh), and quicken the conversion (transition) of the liquid crystal molecule in the liquid crystal layer 18.
Please refer to Fig. 5, in order further to promote the hot machine effect of LCD, in the second embodiment of the present invention, can be leading portion and back segment then with whole hot machine timing separation, in the hot machine program of leading portion, it is accurate to make the LD signal continue to maintain the position of " ON ", and breech lock is sent to the data-signal of pixel capacitors, allows the data-signal output terminal (comprising odd-numbered line and even number line) of source driving chip 15 present floating state.Simultaneously, make the Xon signal of grid drive chip 13 maintain " OFF ", and make all scanning linears (X1, X2 ... the signal X5) all maintains noble potential V
Gh
As for, in the hot machine program of back segment, 13 of grid drive chip continue to keep the Xon signal and exist
" OFF " state, and the signal V of lasting output high levels
GhIt should be noted that part, then can allow the LD signal recover normal and periodically switch that at this moment, data output end also can be returned to normal data-signal and be supplied with by the floating state of high impedance at source driving chip 15.As shown in FIG., at the hot machine that enters back segment after the time, data output end just can be according to the difference of odd-numbered line or even number line, and export respectively on the occasion of or the data-signal of negative value.
Please refer to Fig. 6, in the third embodiment of the present invention, be whole hot machine timing separation leading portion and back segment also, in the hot machine program of leading portion, it is accurate to make the LD signal continue to maintain the position of " ON " equally, and makes the data-signal output terminal of source driving chip 15 present (comprising odd-numbered line and even number line) floating state of high impedance.Simultaneously, make the Xon signal of grid drive chip 13 maintain " OFF ", and make all scanning linears (X1, X2 ... the signal X5) all maintains noble potential V
Gh
After entering the hot machine program of back segment, 13 of grid drive chip are controlled the Xon signal to " ON " state, at this moment, all scanning linears (X1, X2 ... the signal X5) all can be in low level (V
Gl) state, and according to the periodic relief of timing reference signal (CPV), output signal V one by one
GhPulse to each bar scanning linear (X1, X2 ... X5).That is, recover the grid drive chip 13 normal lines that pursue and scan mode, and whether control the transistorized conducting of each bar scanning linear upper film.Same, in the part of source driving chip 15, also can recover the normal LD signal period, make the data output end also can be by the floating state of high impedance, return to normal data-signal and supply with, and according to the difference of odd-numbered line or even number line, export respectively on the occasion of or the data-signal of negative value.
What particularly point out is, except the above-mentioned noble potential signal (V that is continuously applied
Gh) mode outside, the signal (V that also can adopt high electronegative potential to switch rapidly
Gh/ V
Gl) supply mode, drive the liquid crystal molecule conversion.Please refer to Fig. 7, in the fourth embodiment of the present invention, whole hot machine is in the time, and the data-signal output terminal of source driving chip 15 (odd-numbered line and even number line) still is in high impedance and presents floating state.As for the signal that grid drive chip 13 is exported, then be at high/low current potential (V
Gh/ V
Gl) between reciprocal switching, and form specific periodic signal.Under this kind situation, be coupled to the signal potential of pixel capacitors, also can present the accurate reciprocal switching in high/low position, be case of bending and force liquid crystal molecule by oblique exhibition state exchange.
Except applying the signal (V that high electronegative potential switches rapidly among above-mentioned Fig. 7
Gh/ V
Gl) mode outside, also can select to apply the signal of normal condition (normal), reach the purpose that drives the liquid crystal molecule conversion.Please refer to Fig. 8, in the fifth embodiment of the present invention, in the time, the data-signal output terminal of source driving chip 15 (odd-numbered line and even number line) still is in high impedance and presents floating state in whole hot machine.The signal of being exported as for grid drive chip 13, then be to supply with pixel capacitors in regular turn in the general mode that scans to scan signal (Vg), by put in regular turn scanning linear (X1, X2 ... the recurrent pulse signal X5), the voltage level of pixel capacitors can be coupled be similar to the high levels of signal, and can quicken liquid crystal molecule in the liquid crystal layer by oblique exhibition state exchange to case of bending.
In the practical operation, the hot machine time can be along with the different and difference to some extent of product, but in general, the time of whole hot machine be about 0-2 between second; Wherein leading portion the chances are 0-0.5 second, back segment then is 0-1.5 second; That is the ratio of hot machine time of leading portion and hot machine time of back segment approximately is controlled at about 1:3.
The hot machine method of ocb mode liquid crystal display provided by the present invention has considerable advantage. At first, according to design of the present invention, only need utilize existing grid drive chip and source drive core Sheet gets final product, and does not need to increase in addition the high pressure manufacturing process that drives chip. In other words, as long as by adjustment The setup control of timing controller (Tcon) can change the signal output waveform that drives chip, Make the current potential of signal be coupled to pixel capacitors, and accelerate the conversion of liquid crystal molecule state. At this Under kind of the situation, mode of the present invention obviously can be saved change in the known techniques and drive chip design Cost, and be coupled in pixel capacitors with the signal of high potential, and produce required hot machine Effect.
Claims (16)
1. the hot machine method of a LCD, wherein this LCD has the pixel unit array, and each this pixel unit has comprised a thin film transistor (TFT), this thin film transistor (TFT) can be according to the signal of gate terminal, determine whether conducting, make the data-signal of source electrode be sent to this pixel capacitors, with respect to the opposite side of this pixel capacitors and have and use electrode altogether, and a liquid crystal layer clamping is between this pixel capacitors and this common electrode, and this method comprises the following step at least:
Float this source electrode of this thin film transistor (TFT);
Apply this signal in this grid, thus, the position standard that the voltage level of this pixel capacitors can be coupled and be similar to this signal, and can apply a high voltage in pixel capacitors.
2. the hot machine method of LCD according to claim 1, wherein above-mentioned LCD is an optical compensation bending mode liquid crystal display, and the high voltage that puts on pixel capacitors help to quicken liquid crystal molecule in this liquid crystal layer by oblique exhibition state exchange to case of bending.
3. the hot machine method of LCD according to claim 1, wherein above-mentioned LCD also has the one source pole chip for driving, via a data line, is linked to this source electrode of this thin film transistor (TFT), wherein this source driving chip is to export by interrupting this data-signal, and this source electrode of floating.
4. the hot machine method of LCD according to claim 3, wherein above-mentioned LCD also has a grid drive chip, via a plurality of scanning linears, is linked to all these thin film transistor (TFT)s in this cell array.
5. the hot machine method of LCD according to claim 4, wherein above-mentioned signal is to be periodic pulse signal, and is the cycle along with reference frequency, puts on this thin film transistor (TFT) on same this scanning linear one by one.
6. the hot machine method of LCD according to claim 1, wherein above-mentioned signal has high levels and two kinds of voltage levels of low level, when applying the high levels signal, can this thin film transistor (TFT) of conducting.
7. the hot machine method of LCD according to claim 6 wherein in the portion of hot machine period, is that this signal with high levels is continuously applied in this grid.
8. the hot machine method of LCD according to claim 1 in the portion of hot machine period, is to put on this grid with this signal that high/low position quasi periodic is switched wherein.
9. the hot machine method of an optical compensation bending mode liquid crystal display, wherein this LCD has the pixel unit array, and each this pixel unit has comprised a thin film transistor (TFT), whether this thin film transistor (TFT) can determine conducting according to the high and low current potential of gate terminal signal, and make the data-signal can be via source electrode, drain electrode, be sent to this pixel capacitors, with respect to the opposite side of this pixel capacitors and have and use electrode altogether, and a liquid crystal layer clamping is between this pixel capacitors and this common electrode, and this method comprises the following step at least:
In the hot machine of the leading portion time, float this source electrode of this thin film transistor (TFT), this signal that is continuously applied noble potential simultaneously is in this grid, make the voltage level of this pixel capacitors be coupled in the high levels of this signal, and can quicken liquid crystal molecule in this liquid crystal layer by oblique exhibition state exchange to case of bending;
In the hot machine of the back segment time, to recover the data-signal of this source electrode and supply with, this signal that is continuously applied noble potential simultaneously is in this grid, and via this source electrode and this drain electrode of this thin film transistor (TFT), input data signal is to this pixel capacitors.
10. the hot machine method of optical compensation bending mode liquid crystal display according to claim 9, wherein above-mentioned LCD also has the one source pole chip for driving, via a data line, be linked to this source electrode of this thin film transistor (TFT), wherein this source driving chip is to export by interrupting this data-signal, and this source electrode of floating.
11. the hot machine method of optical compensation bending mode liquid crystal display according to claim 10, wherein above-mentioned source driving chip also has the function of breech lock data signal, can interrupt the transmission of data-signal on all data lines.
12. the hot machine method of an optical compensation bending mode liquid crystal display, wherein this LCD has the pixel unit array, and each this pixel unit has comprised a thin film transistor (TFT), whether this thin film transistor (TFT) can determine conducting according to the high and low current potential of gate terminal signal, and make the data-signal can be via source electrode, drain electrode, be sent to this pixel capacitors, with respect to the opposite side of this pixel capacitors and have and use electrode altogether, and a liquid crystal layer clamping is between this pixel capacitors and this common electrode, and this method comprises the following step at least:
In the hot machine of the leading portion time, float this source electrode of this thin film transistor (TFT), this signal that is continuously applied noble potential simultaneously is in this grid, the voltage level of this pixel capacitors can be coupled be similar to the high levels of this signal, and can quicken liquid crystal molecule in this liquid crystal layer by oblique exhibition state exchange to case of bending;
In the hot machine of the back segment time, recover the data-signal of this source electrode and supply with, put on this grid with the signal recurrent pulse simultaneously, with this thin film transistor (TFT) of conducting, and, import this data-signal to this pixel capacitors by this source electrode and this drain electrode.
13. the hot machine method of optical compensation bending mode liquid crystal display according to claim 12, wherein above-mentioned LCD also has the one source pole chip for driving, via a data line, be linked to this source electrode of this thin film transistor (TFT), wherein this source driving chip is to export by interrupting this data-signal, and this source electrode of floating.
14. the hot machine method of optical compensation bending mode liquid crystal display according to claim 13, wherein above-mentioned source driving chip also has the function of breech lock data signal, can interrupt the transmission of data-signal on all data lines.
15. the hot machine method of optical compensation bending mode liquid crystal display according to claim 12, wherein above-mentioned LCD also has a grid drive chip, via a plurality of scanning linears, is linked to all these thin film transistor (TFT)s in this cell array.
16. the hot machine method of optical compensation bending mode liquid crystal display according to claim 15, wherein the signal of above-mentioned recurrent pulse is the cycle along with reference frequency, puts on this thin film transistor (TFT) on same this scanning linear one by one.
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2004
- 2004-05-12 CN CNB2004100380030A patent/CN1310082C/en not_active Expired - Fee Related
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1125425C (en) * | 1995-12-22 | 2003-10-22 | 国际商业机器公司 | Driving method of liquid crystal display device |
| CN1317105A (en) * | 1998-09-03 | 2001-10-10 | 松下电器产业株式会社 | Liquid crystal display, method of manufacturing the same and method of driving liquid crystal display |
| JP2002014317A (en) * | 1999-10-19 | 2002-01-18 | Matsushita Electric Ind Co Ltd | Driving technique for starting liquid crystal device |
| CN1390317A (en) * | 1999-10-26 | 2003-01-08 | 松下电器产业株式会社 | Liquid crystal display and method for manufacturing the same, and method for driving liquid crystal display |
| CN1457449A (en) * | 2001-02-05 | 2003-11-19 | 松下电器产业株式会社 | Liquid crystal display unit and driving method therefor |
| CN1486446A (en) * | 2001-10-08 | 2004-03-31 | 三星电子株式会社 | Liquid crystal display device and method for driving the same |
| JP2003140113A (en) * | 2001-11-08 | 2003-05-14 | Matsushita Electric Ind Co Ltd | Method of driving liquid crystal display device and liquid crystal display device |
| JP2003233352A (en) * | 2002-02-07 | 2003-08-22 | Matsushita Electric Ind Co Ltd | Liquid crystal display device |
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| CN1570740A (en) | 2005-01-26 |
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