CN1308921C - Non-magnetic metallic layer in a reader gap of a disc drive - Google Patents
Non-magnetic metallic layer in a reader gap of a disc drive Download PDFInfo
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- CN1308921C CN1308921C CNB028083334A CN02808333A CN1308921C CN 1308921 C CN1308921 C CN 1308921C CN B028083334 A CNB028083334 A CN B028083334A CN 02808333 A CN02808333 A CN 02808333A CN 1308921 C CN1308921 C CN 1308921C
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Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3103—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/313—Disposition of layers
- G11B5/3133—Disposition of layers including layers not usually being a part of the electromagnetic transducer structure and providing additional features, e.g. for improving heat radiation, reduction of power dissipation, adaptations for measurement or indication of gap depth or other properties of the structure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3967—Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/40—Protective measures on heads, e.g. against excessive temperature
Abstract
A read/write head (110, 200) with a bottom shield d(203) on a slider substrate (201) and a shared shield (204) spaced apart from the bottom shield (203). A write head (211) is deposited on the shared shield. A read sensor (223) is spaced apart by reader magnetic gaps (RG1, RG2) from the bottom shield (203) and the shared shield (204). Electrically insulating layers (224) in the reader magnetic gaps (RG1, RG2) form a thermal resistance between the read sensor (223) and the shields. A thermally conducting nonmagnetic layer (225, 262) in a reader magnetic gap reduces the thermal resistance without a corresponding reduction in the reader magnetic gaps.
Description
Technical field
The present invention relates generally to be used for the magnetic head of magnetic memory drive.The invention particularly relates to the method and structure that is used for the reader gap.
Background technology
Read-out/write-in magnetic head in the disc driver generally includes magnetoresistance (MR) pickup that is deposited between insulation course and the magnetic masking layer.This magnetoresistance is read sensor and is generally included magnetoresistor lamination (stack), electric contact and the one or more magnetic bias of magnetic bias magnetoresistor lamination.
Magnetoresistor and electric contact are all carrying the electrical bias electric current.When by magnetoresistor with the data magnetic storage to disk the time, this magnetoresistor produces has (readback) pulse of reading back that the amplitude that reads back of the data on the disk is stored in expression into.The amplitude that reads back is common and bias current is proportional.Can select the size of bias current amplitude and pickup according to being used for the read back needs aspect of fetch channel electronics of pulse of high amplitude.Can also select the size of the amplitude and the pickup of bias current according to restriction heating with the needs aspect that prevents to damage magnetoresistor.To the read back needs contradiction and limited conventional magnetoresistance and read the performance that sensor can be realized each other of the needs of pulse and restriction heating of high amplitude.
Along with the track density on the disk increases, the size of reader must corresponding reducing, and the growth of contradiction has exceeded the limit of power of current design between the thermoelectric designing requirement.
Need can with read-out/write-in magnetic head that more high areal density uses together in provide improved pyroelecthc properties combination the magnetic pickup and make the method for this magnetic pickup.
Summary of the invention
What disclosed is the read-out/write-in magnetic head that comprises the slider substrate and read shield.Read the shared magnetic masking layer that shield is included in the following magnetic masking layer on the slider substrate and separates mutually with following magnetic masking layer.
Read-out/write-in magnetic head comprises the write head that places on the shared magnetic masking layer.Read-out/write-in magnetic head also comprises the pickup that places down between magnetic masking layer and the shared magnetic masking layer.This pickup is by the reader magnetic gap and read shield separately.
Read-out/write-in magnetic head also comprises the electric insulation layer on the pickup.This electric insulation layer forms pickup and reads thermal resistance between the shield.
Read-out/write-in magnetic head also is included in the heat conduction non-magnetosphere of reading on the shield to be deposited in the magnetic gap of first reader.This heat conduction non-magnetosphere does not have at the magnetic gap of reader to have reduced thermal resistance under the condition of corresponding minimizing.
By reading the following detailed description and will understanding these or various other characteristics and advantage of the present invention with reference to the accompanying drawings.
Description of drawings
Fig. 1 shows a disk drive memory storage.
Fig. 2 shows the structure that magnetoresistance is read sensor between the screen layer of prior art.
Fig. 3 illustrates the side cross-sectional view of film read-out/write-in magnetic head.
Fig. 4 illustrates the magnetosphere of disk and the side cross-sectional view of pickup amplification together.
Fig. 5 illustrates the section front view of the part amplification of the pickup among Fig. 4.
Fig. 6 illustrates the upward view of the amplification of the pickup among Fig. 4-5.
Fig. 7 illustrates the upward view of amplification that magnetoresistance is read second embodiment of sensor.
Fig. 8 illustrates the upward view of amplification that magnetoresistance is read the 3rd embodiment of sensor.
Fig. 9 illustrates as peak value in the magnetoresistor of the function of the thickness X of heat conduction non-magnetosphere and medial temperature.
Figure 10 illustrates the Al of Y=20 nanometer thickness
2O
3The failure rate of the electric breakdown of layer.
Figure 11 illustrates the Al of Y=10 nanometer thickness
2O
3The failure rate of the electric breakdown of layer.
Embodiment
In the embodiment that describes below in conjunction with Fig. 3-11, read-out/write-in magnetic head provides improved pyroelecthc properties combination.One or more heat conduction non-magnetospheres have been comprised in the write device gap around magnetoresistance is read sensor.These heat conduction non-magnetospheres do not have at the magnetic gap of reader to have reduced thermal resistance under the condition of corresponding minimizing.Bigger bias current can be applied to (CPP) magnetoresistive sensor, and can be not overheated.
Fig. 1 shows an embodiment of disk drive memory storage 100.Disc driver 100 comprises having the disk groups 126 that visualize is the storage surface 106 of material layer (such as, the readable material of magnetic material or light).Disk groups 126 comprises the lamination of a plurality of disks, and each disk can be visited by combination 112 (being also referred to as slider) of reading/write that comprise read-out/write-in magnetic head 110.The disk that spindle drive motor 127 drives in the disk groups 126 rotates with the direction shown in arrow 107.When disk rotates, read/write the different rotary position on the storage surface 106 of combination 112 visits in disk groups 126.Start and to read/to write combination 112 and carry out moving radially of relative magnetic disk surface 106, such as along the represented direction of arrow 112, so that the different magnetic tracks (or radial position) on the visit magnetic disk surface 106.The startup of such reading/write combination 112 exemplarily is provided by the servo-drive system that comprises voice coil motor (VCM) 118.Voice coil motor 118 comprises the rotor 116 that places on the axle 120.VCM118 also exemplarily comprises the arm 114 that supports read-out/write-in magnetic head combination 112.
Fig. 2 illustrates the structure 140 of the pickup 146 of prior art.Among Fig. 2, figure is the sectional view towards the air bearing that suspends on the disk such as the magnetic disk surface among Fig. 1 106 (air bearing) surface.Magnetoresistance is read the magnetoresistor 154 that detecting device 146 comprises next-door neighbour's magnetic layer 150 and electric contact 152.Magnetoresistor 154 has as what represent among Fig. 2 reads width RW.Magnetic masking layer 142,144 separates by insulation course 148 and the magnetoresistor 154 that forms the reader gap.The magnetic masking layer 142 of molded non-planar since the restriction of technology and design cause.Bias current I is by electric contact 152 and magnetoresistor 154.The part heat that dissipates in magnetoresistor 154 flows through insulation course 148 and is guided out magnetoresistor 154 arrival screen layers 142,144.
Adjust prior art structure 140 so that during with higher face bit density work when needs, the overall dimensions that reduces structure 140 makes this structure can be with higher face bit density work.Yet, be apparent that, need to reduce bias current I and avoid making magnetoresistor 154 overheated.After having reduced bias current I, the amplitude of the pulse of can finding to read back reduces pro rata.In order to attempt to increase the amplitude of pulse of reading back, the thickness that reduces insulation course 148 reduces magnetoresistor 154 and as the thermal resistance between the shield 142,144 of heat radiator (heat sink).Along with the reduction of thermal resistance, bias current I can be returned to its initial level, and not cause the overheated of magnetoresistor 154.But, can find subsequently, the amplitude of pulse of reading back not as the expection increases, because shielded to the too close magnetoresistor 154 of shield 142,144 and transition the magnetic transition (magnetic transition) on the disk of 154 pairs of magnetoresistor 154 low suspensions of magnetoresistor now.In addition, can find that the thickness that reduces insulation course 148 has unfavorable high-electric breakdown rate, this is because the operating voltage difference between (CPP) magnetoresistive sensor 146 and shield 142,144.A kind of main pattern of electric breakdown is the inter-level diffusion (interlayer diffusion) that heat drives.Thus, the effort that reduces the size of structure 140 reaches the limit of, and surpasses this limit, then can not further reduce size by the yardstick of adjusting each layer in electric current I and the structure 140.Can redesign the reader lamination and make it to have higher magnetoresistivity, still, the redesign of such reader has also arrived the limit.The actual physics restriction that has been used for the operating voltage restriction of material of insulation course 148 and surface density performance setting that the working temperature of material that is used for each layer of magnetoresistor 154 is restricted to the design shown in Fig. 2.
Especially, in order to provide surface density near the 50Gb/ inch
2, 60k magnetic track per inch or 700kb/ inch magnetic track the effort of structure run into these physical restriction.Aspect the size of reader structure, these physical restriction comprise about 220 nanometers of width of shield about 70 nanometers, reader to the interval of shield or about 150 nanometers of height of striped (stripe).
But these physical restriction can overcome by the structure that can illustrate below in conjunction with Fig. 3-11, and this structure comprises one or more heat conduction non-magnetospheres in the reader gap.These heat conduction non-magnetospheres have reduced thermal resistance, and in the not corresponding reduction of reader magnetic gap.Bigger bias current can be applied to (CPP) magnetoresistive sensor, and not make magnetoresistor overheated.Obtain the amplitude that reads back of required amplitude, and not overheated.In addition, if run into the voltage breakdown problem that reduces thickness of insulating layer, then this voltage breakdown problem can reduce by use the ald material on insulation course.
Fig. 3 schematically illustrates the partial cross section of the read-out/write-in magnetic head that is used for disk drive.Read-out/write-in magnetic head 200 comprises film read-out/write-in magnetic head or transducer 214.Transducer 214 is deposited on the substrate 201.The major part of read-out/write-in magnetic head 200 is made of substrate 201, and as shown in the figure, it extends to border 215 and 216.Described part read-out/write-in magnetic head 200 edges, cross section among Fig. 3 are perpendicular to the back edge of the close read-out/write-in magnetic head 200 of central plane of the air bearing surface 222 of read-out/write-in magnetic head 200.
Preferably, substrate 201 is formed by conducting ceramic material, such as aluminium oxide (Al
2O
3) and the potpourri of titanium carbide (TiC), often be called " AlTiC ".Also can use silicon or other known backing material.
Basic unit (basecoat) material is deposited on the substrate 201.Base material 202 is electrically insulating materials, is generally Al
2O
3This base material 202 forms the bonding (bond) with backing material 201.Also can use silicon dioxide or other known base material.
The metal magnetosphere of the deposition that is formed by the alloy of iron (Fe), nickel (Ni) or cobalt (Co) forms down magnetic masking layer 203, shares magnetic masking layer 204, goes up magnetic pole 212 and magnetic core (core) 206.The center of magnetic core 206 by coil 208 and the magnetic circuit that writes that gap 220 runs through that writes by air bearing surface 222 places.Magnetic core 206, coil 208, write gap 220 and coil insulator 207 and form and place the write head of sharing on the magnetic masking layer 204 211.Following magnetic masking layer 203 is bonded on the substrate 201 by base material 202.
Preferably, the write coil 208 in the transducer 214 is made by copper or by other highly conductive metal or alloy.Coil insulator 207 is formed by (cured) photoresist of handling usually.Also can use silicon dioxide and other known coil insulator.
The electric insulation layer 213 of deposition is in addition filled magnetic masking layer 203 and shared magnetic masking layer 204 space on every side down.Part layer 213 (not shown among Fig. 3) also comes to provide non-magnetic, electric insulation layer around magnetoresistance is read sensor 205 in extension between following magnetic masking layer 203 and the shared magnetic masking layer 204.Layer 213 is usually by Al
2O
3Make and be formed into the bonding of basic unit 202.Also magnetoresistance read sensor 205 around be provided with one or more heat conduction nonmagnetic metal layers (for example, shown in the Fig. 6-8 that amplifies).
For clear, not shown among Fig. 3 by Cu, electrical lead and contact that Au or other metal or metal alloy form with conventional method.
One or more insulation outer coatings or external coating 210 are deposited on whole transducers 214.Outer coating 210 is normally by Al
2O
3Or other known dielectric is made.Preferably, smooth outer coating 210 is used for the electric contact (not shown) of coil 207 and the magnetoresistance in the transducer 214 is read sensor 205 so that expose after deposition.
After the read-out/write-in magnetic head 200 that forms as shown in Figure 3, the air bearing surface (ABS) 222 that is suspended on the magnetic medium is shaped it.
The partial section of the amplification of the schematically illustrated playback head 223 as shown in Figure 3 of Fig. 4, this playback head 223 suspends above the magnetosphere 226 of the disk of all disks 126 as shown in Figure 1.In playback head 223, following magnetic masking layer 203 and shared magnetic masking layer 204 are placed in each side of pickup 205, and provide magnetic shielding to pickup 205.Insulation course 224 usefulness magnetic reader gap RG1, RG2 make pickup 205 and magnetic shield 203,204 electrical isolation and magnetic insulation.The thickness of magnetic reader gap RG1, RG2 and pickup 205 is formed shielding SS at interval.Magnetic reader gap RG2 also comprises the heat conduction non-magnetosphere 225 that is deposited on the shared magnetic masking layer 204.Heat conduction non-magnetosphere 225 usefulness non-magnetic materials occupy part reader gap RG2, thereby keep whole magnetic reader gap RG2.But heat conduction non-magnetosphere 225 is heat conduction, and has therefore reduced the thermal resistance between reader 205 and the shared magnetic masking layer 204.This thermal resistance that has reduced allow in reader 205, to dissipate more power and not overheated.Therefore, the bias current by reader 205 can be higher and do not cause overheated.Reading back, amplitude and bias current increase pro rata and the required amplitude of the pulse that can realize reading back, this make this structure can with prior art structure shown in Figure 2 institute can not the reality realization surface density work.
Digital information is stored on the magnetosphere 226 with the form of magnetic transition 228.Each bit exists (1) or disappearance (0) expression by the transition in the medium.When detecting transition 230, the external circuit that is connected to pickup 205 is logic state of transition 230 translations (for example, one (1)), and will be in another logic state of disappearance translations (for example, 0) of the transition 230 of special time.Pickup 205 produces the pulse of reading back of being coupled to external circuit.To illustrate in greater detail the pickup 205 with heat conduction non-magnetosphere and the various structures of shield 203,204 below in conjunction with Fig. 5-11.
Fig. 5 illustrates the sectional view as the aligning (alignment) of the magnetoresistor 238 of the part of the (CPP) magnetoresistive sensor 205 shown in Fig. 3-4 and its electric contact 242.Figure shown in Fig. 5 is perpendicular to air bearing surface 222.Fig. 5 illustrates the striped height SH that reads width RW and magnetoresistor 238 of magnetoresistor 238.The aligning of heat conduction non-magnetosphere 225 is shown by dashed lines.
Fig. 6 shows the upward view of amplification of the part 251 of the pickup 223 shown in Fig. 4-5.Pickup 223 is that the slider substrate 201 and the part that places the read-out/write-in magnetic head 200 of sharing the write head 211 on the magnetic masking layer 204 of magnetic masking layer 203 are down supported in shown in Figure 3 comprising.Following magnetic masking layer 203 and shared magnetic masking layer 204 are separated from each other, and the composition that combines is read shield 209.
Pickup 205 is placed in down between magnetic masking layer 203 and the shared magnetic masking layer 204.Pickup 205 is by reader magnetic gap RG1 and RG2 and read shield 209 and separate (Fig. 4).Electric insulation layer 224 on the pickup provides pickup 205 and reads insulation between the shield 209, and still, electric insulation layer 224 also forms undesirable pickup 205 and reads thermal resistance between the shield 209.
Heat conduction non-magnetosphere 225 is deposited on to be read on the shield 209 and in first RG2 of reader magnetic gap RG1, RG2.Heat conduction non-magnetosphere 225 has reduced thermal resistance, and not corresponding reduction in reader magnetic gap RG1, RG2.As among Fig. 6 shown in online 266, have from magnetoresistor 238 and cross heat conduction non-magnetosphere 225 to the type of thermal communication of the enhancing of sharing screen layer 204.
By replace the contiguous insulation course 224 of part with heat conduction non-magnetosphere 225, big bias current can be applied to (CPP) magnetoresistive sensor 2005, and not make magnetoresistor 238 overheated.The read back required degree of amplitude of realization, and not overheated.
In preferable structure, heat conduction non-magnetosphere 225 comprises the contiguous metal level of reading deposition on the shield 209.Preferably, this metal level comprises tungsten or chromium, and they have good corrosion attribute and smear damping (smearing resistance) at overlapped surfaces 222 places.In another preferred construction, thin inculating crystal layer is deposited on heat conduction non-magnetosphere 225 and reads on the interface 227 between the shield 209.Preferably, this thin inculating crystal layer is and those metal mixtures that is complementary that uses in reading shield 209 and heat conduction non-magnetosphere 225.For example, the inculating crystal layer of the potpourri of nickel, iron and tungsten can be used as the inculating crystal layer between tungsten layer 225 and the permalloy layer 204.
In another preferable structure, electric insulation layer 224 is Al
2O
3Ald (ALD).As illustrated below in conjunction with Figure 10-11, improved the reliability of insulation failure with the electric insulation layer of ALD process deposits, allow to use thinner layer 224.In a preferable structure, the electric insulation layer 224 of adjacent thermal conductive non-magnetosphere 225 has 20 nanometers or littler thickness.In another preferable structure, the electric insulation layer 224 of adjacent thermal conductive non-magnetosphere 225 has 10 nanometers or littler thickness.In the application of the voltage breakdown problem that runs into the insulation course that has reduced, can reduce this voltage breakdown problem by in insulation course, using ald (ALD) material.
Fig. 7 shows reading magnetoresistance that the gap comprises heat conduction non-magnetosphere 262 and reads the upward view of amplification of second embodiment of sensor 260.Structure shown in homotaxis Fig. 6 shown in Fig. 7, its difference be, non-magnetosphere 262 is deposited on down on the magnetic masking layer 203 rather than on the shared magnetic masking layer 204 among Fig. 7.As among Fig. 7 shown in online 264, have from magnetoresistor 238 and cross heat conduction non-magnetosphere 262 to the type of thermal communication of the enhancing of magnetic masking layer 203 down.
Fig. 8 is illustrated in and reads the upward view of amplification that the magnetoresistance that comprises the heat conduction non-magnetosphere in the gap is read the 3rd embodiment of sensor.Structure shown in similar Fig. 6 shown in Fig. 8-7, its difference are that non-magnetosphere 262 is deposited on down on the magnetic masking layer 203 among Fig. 8, and non-magnetosphere 225 is deposited on the shared magnetic masking layer 204.Among Fig. 8, each in two insulation courses 224 all reduces thickness so that hold in the non-magnetosphere 225,262 one.Shown in Fig. 8 center line 264,266, have from magnetoresistor 238 and cross the first heat conduction non-magnetosphere 262, and have from magnetoresistor 238 and cross the second heat conduction non-magnetosphere 225 to the type of thermal communication of the enhancing of sharing magnetic masking layer 204 to the type of thermal communication of the down enhancing of magnetic masking layer 203.
Fig. 9 illustrates the finite element analysis as peak value and medial temperature in the magnetoresistor of the function of the thickness X of heat conduction non-magnetosphere in the magnetic head as shown in Figure 6.
Among Fig. 9, the longitudinal axis 300 is with a degree centigrade expression temperature, and transverse axis 302 is with nanometer (nM) expression thickness X.First curve 304 illustrates the average computation temperature as the magnetoresistor 238 of the function of thickness X.Second curve 306 illustrates the peak value accounting temperature of magnetoresistor 238.The yardstick that is used for finite element analysis model is shown below Fig. 9.The thickness that the contiguous insulation course 224 of shield 203 down has 20 nanometers.The thickness that pickup 205 (comprising magnetoresistor 238, magnetic bias 240 and electric contact 242) has 35 nanometers.Magnetoresistor 238 has the reader width of 250 nanometers and the bar height of 150 nanometers, and bias current is 4 milliamperes.Heat conduction non-magnetosphere 225 has the thickness X that changes in finite element analysis.The thickness sum of the insulation course 224 of heat conduction non-magnetosphere 225 and vicinity is 35 nanometers.The insulation course 224 of contiguous non-magnetosphere has the thickness Y=that changes (30 nanometers-X) in finite element analysis.Can find that as long as the approaching temperature conductivity of sharing magnetic masking layer 204 of the thermal conductivity of layer 225, the result is just insensitive relatively to the temperature conductivity of heat conduction non-magnetosphere 225.
Can see from first curve 304, be increased to about 20 nanometers by the thickness with layer 225, the medial temperature of magnetoresistor 238 can be reduced to about 16 degrees centigrade.Shown in curve 306, be increased to about 20 nanometers by thickness with layer 225, peak temperature can be reduced to about 20 degrees centigrade.
Figure 10 illustrates the Al of Y=20 nanometer thickness
2O
3The failure rate of the electric breakdown of layer.Figure 10 comprises the longitudinal axis 320 of the Fault of Insulating Breakdown rate of representing time per unit, be applied to the transverse axis 322 of the voltage of the insulating material of thickness Y=20 nanometer on the curved surface with expression, wherein this curved surface imitation above in the pickup shown in Fig. 6-8 insulating material 224 shaped surface.First curve 324 illustrates measured at popular response sputter Al
2O
3The Fault of Insulating Breakdown rate of depositing operation.Second curve 326 illustrates measured at being used for Al
2O
3Ald (ALD) technology Fault of Insulating Breakdown rate.For example,, use the failure rate of the reaction equation sputtering sedimentation that passes to be about 100 mistakes of time per unit and lose, and the failure rate of use ALD technology is less than time per unit 1 time for 7 volts voltage difference of the layer of crossing over 20 nanometers.Therefore, ALD technology provides very dense, low current leakage, high-breakdown-voltage film in the zone of about 10 nanometer thickness.This ALD technology has low pin hole (pinhole) density, low impurity concentration and good step effective range (step coverage), and can use and do not have pre-sputter etching (presputter etch).
Figure 11 illustrates the Al of Y=10 nanometer thickness
2O
3The electric breakdown failure rate of layer.Figure 11 comprises the longitudinal axis 340 of the Fault of Insulating Breakdown rate of representing time per unit, be applied to the transverse axis 342 of the voltage of the insulating material of thickness Y=10 nanometer on the curved surface with expression, wherein this curved surface imitation above in the pickup shown in Fig. 6-8 insulating material 224 shaped surface.First curve 344 illustrates measured at popular response sputter Al
2O
3The Fault of Insulating Breakdown rate of depositing operation.Second curve 346 illustrates measured at being used for Al
2O
3Ald (ALD) technology Fault of Insulating Breakdown rate.For example,, use the failure rate of the reaction equation sputtering sedimentation that passes to be about 130 mistakes of time per unit and lose, and the failure rate of use ALD technology is less than time per unit 10 times for 2 volts voltage difference of the layer of crossing over 10 nanometers.
In a word, read-out/write-in magnetic head (110,200) comprises slider substrate (201) and reads shield (209).This is read shield and is included in following magnetic masking layer (203) on the slider substrate, and and the shared magnetic masking layer (204) that separates of following magnetic masking layer.
Read-out/write-in magnetic head comprises the write head that places on the shared magnetic masking layer.This read-out/write-in magnetic head also comprises the pickup (223) that places down between magnetic masking layer and the shared magnetic masking layer.Pickup by the reader magnetic gap (RG1, RG2) and read screen layer and separate.
Read-out/write-in magnetic head also comprises the electric insulation layer (224) on the pickup.This electric insulation layer forms pickup and reads thermal resistance between the shield.
Read-out/write-in magnetic head also is included in first and reads and be deposited on the heat conduction non-magnetosphere of reading on the shield (225,262) in the magnetic gap.This heat conduction non-magnetosphere does not have to have reduced thermal resistance under the corresponding condition that reduces at the reader magnetic gap.
Be appreciated that, although in description before, set forth mass property and the advantage of various embodiment of the present invention, and the detailed structure of various embodiment of the present invention and function, but this announcement only is illustrative, and can at length make amendment, particularly aspect the structure and arrangement of the part in the principle of the invention scope that the extensive conventional meaning by the claims statement illustrates as far as possible.Should not be used for revising specific element especially to what read/write when for example, can not deviate from scope and spirit of the present invention according to keeping basic identical function.For example, can comprise the additional layer that improves performance, can also be according to the style characteristic in the needs change read-out/write-in magnetic head of using.In addition, though preferred embodiment described herein is at the thin-film head that is used for hard disk drive system, the those skilled in the art in the present technique field are appreciated that instruction of the present invention can be applied to other magnetic system, as tape drive, and do not deviate from scope and spirit of the present invention.
Claims (9)
1. a read-out/write-in magnetic head is characterized in that, comprising:
The slider substrate;
Read shield, it comprises following magnetic masking layer on the described slider substrate and the shared magnetic masking layer that separates with described magnetic masking layer down;
Write head, it is placed on the described shared magnetic masking layer;
Pickup, it is placed between described magnetic masking layer down and the described shared magnetic masking layer, and described pickup separates by reader magnetic gap and the described shield of reading;
Electric insulation layer, it is positioned on the described pickup, and described electric insulation layer forms thermal resistance at described pickup and described reading between the shield;
The heat conduction nonmagnetic metal layer, it comprises the metal that is selected from tungsten or chromium, this heat conduction nonmagnetic metal layer is deposited in described reader magnetic gap on one of them person at least of down magnetic masking layer and shared magnetic masking layer, and described heat conduction nonmagnetic metal layer does not have at described reader magnetic gap to reduce described thermal resistance under the condition of corresponding reduction; And
Inculating crystal layer, it is adhered to the described shield of reading with described metal level, wherein said inculating crystal layer is the potpourri of metal, described metal mixture comprise with the described metal of reading used metal coupling in the shield and and described metal level in the metal of used metal coupling.
2. read-out/write-in magnetic head as claimed in claim 1 is characterized in that, described electric insulation layer is ald Al
2O
3Layer.
3. read-out/write-in magnetic head as claimed in claim 2 is characterized in that, described electric insulation layer comprises the layer with 20 nanometers or littler thickness.
4. read-out/write-in magnetic head as claimed in claim 3 is characterized in that, described electric insulation layer comprises the layer with 10 nanometers or littler thickness.
5. a read-out/write-in magnetic head as claimed in claim 1 is characterized in that,
Described heat conduction nonmagnetic metal layer have be parallel to described pickup read width and extend beyond described read width the layer wide.
6. be used to make the method for read-out/write-in magnetic head, it is characterized in that, comprising:
The slider substrate is provided;
To descend magnetic masking layer to deposit on the described slider substrate;
Deposit first electric insulation layer;
The deposition pickup;
Deposit second electric insulation layer;
Deposition is shared magnetic masking layer;
On described shared magnetic masking layer, deposit write head;
Wherein, the reader magnetic gap separates described pickup and the shield of being made up of shared magnetic masking layer and following magnetic masking layer of reading;
Described first and second electric insulation layers form thermal resistance at described pickup and described reading between the shield;
This method also comprises:
During carrying out above-mentioned steps, the heat conduction nonmagnetic metal is deposited to respectively and at least in one of them of following magnetic masking layer and corresponding two the reader magnetic gap of shared magnetic masking layer; Described heat conduction nonmagnetic metal layer is adhered to described reading on the shield by inculating crystal layer, thereby reduces described thermal resistance under the condition that does not have corresponding reduction at described reader magnetic gap; Described inculating crystal layer is formed by metal mixture, described metal mixture comprise with the described metal of reading used metal coupling in the shield and and described heat conduction nonmagnetic metal layer in the metal of used metal coupling.
7. method as claimed in claim 6 is characterized in that, also comprises:
Pass through Al
2O
3Atom layer deposition process form described electric insulation layer.
8. method as claimed in claim 7 is characterized in that, also comprises:
Make in the electric insulation layer of formation at least one have 20 nanometers or littler thickness.
9. method as claimed in claim 8 is characterized in that, also comprises:
Make in the electric insulation layer of formation at least one have 10 nanometers or littler thickness.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US28462401P | 2001-04-18 | 2001-04-18 | |
| US60/284,624 | 2001-04-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1613110A CN1613110A (en) | 2005-05-04 |
| CN1308921C true CN1308921C (en) | 2007-04-04 |
Family
ID=23090902
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB028083334A Expired - Fee Related CN1308921C (en) | 2001-04-18 | 2002-03-27 | Non-magnetic metallic layer in a reader gap of a disc drive |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2004533698A (en) |
| CN (1) | CN1308921C (en) |
| GB (1) | GB2388246A (en) |
| WO (1) | WO2002086871A1 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0620228A (en) * | 1992-07-03 | 1994-01-28 | Mitsubishi Electric Corp | Thin-film magnetic head |
| US6195232B1 (en) * | 1995-08-24 | 2001-02-27 | Torohead, Inc. | Low-noise toroidal thin film head with solenoidal coil |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6084752A (en) * | 1996-02-22 | 2000-07-04 | Matsushita Electric Industrial Co., Ltd. | Thin film magnetic head |
| US5898548A (en) * | 1997-10-24 | 1999-04-27 | International Business Machines Corporation | Shielded magnetic tunnel junction magnetoresistive read head |
| KR100623812B1 (en) * | 1998-07-21 | 2006-09-12 | 시게이트 테크놀로지 엘엘씨 | Reducing sensor temperature in magnetoresistive recording heads |
| JP2000113427A (en) * | 1998-10-06 | 2000-04-21 | Tdk Corp | Thin-film device, thin-film magnetic head and magneto- resistive element and their production |
-
2002
- 2002-03-27 GB GB0318558A patent/GB2388246A/en not_active Withdrawn
- 2002-03-27 JP JP2002584304A patent/JP2004533698A/en active Pending
- 2002-03-27 WO PCT/US2002/009721 patent/WO2002086871A1/en active Application Filing
- 2002-03-27 CN CNB028083334A patent/CN1308921C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0620228A (en) * | 1992-07-03 | 1994-01-28 | Mitsubishi Electric Corp | Thin-film magnetic head |
| US6195232B1 (en) * | 1995-08-24 | 2001-02-27 | Torohead, Inc. | Low-noise toroidal thin film head with solenoidal coil |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2004533698A (en) | 2004-11-04 |
| GB2388246A (en) | 2003-11-05 |
| CN1613110A (en) | 2005-05-04 |
| WO2002086871A1 (en) | 2002-10-31 |
| GB0318558D0 (en) | 2003-09-10 |
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