CN1304894A - Process for preparing cordierite-base microcrystal glass-ceramics medium material used for multi-layer inductor - Google Patents
Process for preparing cordierite-base microcrystal glass-ceramics medium material used for multi-layer inductor Download PDFInfo
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- CN1304894A CN1304894A CN 01102209 CN01102209A CN1304894A CN 1304894 A CN1304894 A CN 1304894A CN 01102209 CN01102209 CN 01102209 CN 01102209 A CN01102209 A CN 01102209A CN 1304894 A CN1304894 A CN 1304894A
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- 239000013081 microcrystal Substances 0.000 title claims abstract description 7
- 239000000463 material Substances 0.000 title claims description 25
- 239000002241 glass-ceramic Substances 0.000 title claims description 8
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000011521 glass Substances 0.000 claims abstract description 27
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000000227 grinding Methods 0.000 claims abstract description 7
- 238000010791 quenching Methods 0.000 claims abstract description 7
- 230000000171 quenching effect Effects 0.000 claims abstract description 7
- 238000002844 melting Methods 0.000 claims abstract description 3
- 230000008018 melting Effects 0.000 claims abstract description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 239000002253 acid Substances 0.000 claims description 6
- 230000001476 alcoholic effect Effects 0.000 claims description 6
- 230000004927 fusion Effects 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 6
- 238000002791 soaking Methods 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 3
- 238000012856 packing Methods 0.000 claims description 2
- 239000003989 dielectric material Substances 0.000 abstract description 16
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 abstract description 6
- 238000001035 drying Methods 0.000 abstract description 5
- 229910052878 cordierite Inorganic materials 0.000 abstract description 3
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 abstract description 3
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052737 gold Inorganic materials 0.000 abstract description 3
- 229910052763 palladium Inorganic materials 0.000 abstract description 3
- 229910052709 silver Inorganic materials 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000002156 mixing Methods 0.000 abstract 2
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 abstract 2
- 229910011255 B2O3 Inorganic materials 0.000 abstract 1
- 238000001354 calcination Methods 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000007723 die pressing method Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 229910000859 α-Fe Inorganic materials 0.000 description 18
- 238000005245 sintering Methods 0.000 description 14
- 238000011161 development Methods 0.000 description 8
- 238000011160 research Methods 0.000 description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- 229910052573 porcelain Inorganic materials 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 239000000411 inducer Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 238000005303 weighing Methods 0.000 description 4
- 229910003962 NiZn Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910052596 spinel Inorganic materials 0.000 description 3
- 239000011029 spinel Substances 0.000 description 3
- 206010037660 Pyrexia Diseases 0.000 description 2
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000005755 formation reaction Methods 0.000 description 2
- 239000002223 garnet Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 206010007247 Carbuncle Diseases 0.000 description 1
- 229910017706 MgZn Inorganic materials 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- 239000005385 borate glass Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000006253 efflorescence Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000009766 low-temperature sintering Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- -1 metal oxide compound Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 206010037844 rash Diseases 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/097—Glass compositions containing silica with 40% to 90% silica, by weight containing phosphorus, niobium or tantalum
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
A cordierite-based microcrystal glass/ceramic dielectric material for multi-layer inductor is prepared through mixing MgO, Al2O3, SiO2, B2O3 and P2O5, adding alcohol, mixing, drying, melting to prepare glass, quenching, wet ball grinding, die pressing to obtain wafer, and calcining. Its advantages are low-temp (lower than 1000 deg.C) sinteing it with Au, Ag/Pd, or Cu electrode, low dielectric constant and low dielectric loss.
Description
The present invention relates to a kind of preparation method of cordierite-base microcrystal glass-ceramics medium material used for multi-layer inductor, belong to materials science field.
The dielectric material of traditional lamellar inductor generally adopts the Ferrite Material of soft magnetism, and soft magnetic iron magnet (ferrite) has three kinds of crystal formations commonly used, is respectively spinel type, carbuncle type and Magnetoplumbate-type.In the ferrite of spinel type, the NiZn ferrite has obtained extensive studies and application the most.Some other system, such as, Li based ferrite, MgZn ferrite, MnZn ferrite also have been subjected to scholar's attention and research, but these systems are because the restriction of self frequency aspect can not be used for high frequency.Y iron garnet (YIG) is the representative of garnet type ferrite, and magnetic magneto-plumbite type ferrites is representative with the Ba ferrite then.These two kinds of Ferrite Materials are not used for producing in a large number, and the research of carrying out at them is still arranged in the scholar.The NiZnCu ferrite be in industry, use at present the most a kind of dielectric material, it is formed by part Ni and the Zn that Cu has substituted in the NiZn ferrite, the crystal formation of spinel does not change.More common molecular formula is as Ni
0.25Cu
0.25Zn
0.50Fe
2O
4, CuO adds wherein as a kind of low-temperature metal oxide compound, and purpose is to reduce ferritic sintering temperature.To the NiZnCu ferrite, sintering temperature drops to 1050 ℃ from 1250 ℃ from the NiZn ferrite.Then,, again temperature is reduced, thereby be implemented in sintering below 900 ℃ by other way.For the effect that Cu is played therein, also there are a lot of scholars to do corresponding research.Wherein noticeable with the research of Japanese scholar Fujimoto.In fact, in order to reduce the sintering temperature of NiZnCu, various ways have been tested by scholar and manufacturer.Main experiment can reduce two classes; (1) reduces sintering temperature by adding some fusing assistants.As, add Bi
2O
3Or Pb glass.(2) way by the preparation ultrafine powder reduces sintering temperature.As, efflorescence again after the pre-burning perhaps adopts the chemical process of sol-gel to prepare raw material [13-14].Recently, the method that the scholar who has has tested the xerogel auto-combustion prepares ferritic ultrafine powder, has obtained reasonable result.The NiZnCu ferrite is that as the advantage of dielectric material its magnetic permeability is bigger, can arrive hundreds of to several thousand, but it can not be used for high frequency and ultra-high frequency (500MHz-5GMHz), its reason is: the electric medium constant of this dielectric material is big (being generally 10-15), makes lamellar inductor produce bigger subsidiary electric capacity under high frequency; Its inductance value is also bigger simultaneously, and the self-resonant frequency of inducer determines that by inductance value and subsidiary electric capacity its relational expression is: SRF=1/[2 π (LC
p)
1/2].Inductance (L) and electric capacity (Cp) are big more, and self-resonant frequency is more little on the contrary.So the multilayer chip inductor that is dielectric material with this traditional Ferrite Material can't be applicable to utmost point radio band.
The development trend of electronic product can reduce " Four Modernizations " roughly now, i.e. miniaturization, mobile, digitizing and high frequencyization.And for many years, the technical development of inducer relatively lags behind, and has influenced the overall development of electronic product.Chip inductor mainly is divided into two classes: multi-layer type chip inductor and wire-wound chip inductor device.In market that the expert did was estimated, both portions were respectively 60% and 40%, and along with the development of technology, the former will increase by shared proportion gradually.The major advantage of lamellar inductor (MLCI) has: volume is little; The reliability height; Magnetic shielding is good; Be suitable for surface mounting (SMT) and automatic assembling etc.Many electronic products all be unable to do without lamellar inductor, as notebook, cell-phone, beeper, large-screen color TV movement etc.The application of lamellar inductor comprises: (1) and the synthetic LC wave filter of electric capacity; (2) conduct exchanges obstructing instrument in active device (as transistor); (3) be used for matching circuit; (4) as anti-electromagnetic interference (EMI) wave filter.Aspect the research and industrialization of multilayer tablet sense, Japan is walked in front, the world.As far back as 1986, they just proposed original sheet sense design, and in subsequently several years, constantly study and improve the technology of sheet sense.At present, the manufacturer of Japan has occupied most of market, and especially aspect frequency applications, TDK company, field, village company, company of TAIYO YUDAN and the TOKO company of Japan all have self-resonant frequency to be higher than the 4GHz product.The level of the U.S. is only second to Japan.Be Korea S and Taiwan backward.Domestic will falling behind relatively, but in recent years, existing part scholar has carried out fruitful research.
In sheet sensor spare, mainly contain two kinds of materials: electrode materials and dielectric material.Wherein electrode materials generally adopts argent (Ag) or silver-palladium alloy (Ag-Pd), and argent is to be chosen as the conductor of Inside coil owing to having minimum resistivity, if adopt argent, dielectric material requires sintering below 900 ℃; If dielectric material is at 1000 ℃ of following sintering, then adopt silver-colored palladium electrode, so, the low fever's dielectric material that is used for chip inductor is the gordian technique of chip inductor, frequently from present research and industrialized present situation, low fever's dielectric material that present chip inductor is used mainly contains three classes, and a class is to be applied to the ferrite medium of 300MHz with lower frequency; Another kind of is stupalith and the ferritic miscellany that is applied to the low-k in the high-frequency range (500MHz-2GHz); The 3rd class is low-k (1MHz, K＜5.0 that are applied in the uhf region (2-5GHz); 1MHZ, tan δ＜0.001) stupalith dielectric material.
In the research of low Jie's porcelain, Taiwan's scholars is permitted positive source (Jen-Yan Hsu) and has been delivered one piece of very important article in 1997, mentions them and has prepared three groups of samples with low Jie's porcelain and experimentize, and has obtained 5.3 to the 2.4GHz high frequency.But in this literary composition, he does not spell out the system of the low Jie's porcelain that is adopted, and has just listed several conditions, as low medium electric constant (ε
r=4-5), low loss tangent (at 1MHz, tan δ≤0.001) and low sintering temperature (being lower than 900 ℃).
Along with the continuous development of microelectronics, as mobile phone, hand-held computer, products such as large color screen movement are constantly to the high frequency development now, and it is extremely urgent to produce the electronic devices and components that are suitable for high frequency, ultra-high frequency application.This has higher requirement to corresponding electronic device material, and for many years, the technical development of inducer relatively lags behind, and has influenced the overall development of electronic product.
The objective of the invention is to propose a kind of preparation method of cordierite-base microcrystal glass-ceramics medium material used for multi-layer inductor, select the dielectric material of a kind of nonmagnetic ceramic materials as the high-frequency chip inductor device, and adopted devitrified glass technology to reach low sintering purpose so that be lower than 1000 ℃ down and Ag, Au, electrodes such as Ag/Pd, Cu burn altogether.Adopt this new material to make inducer as the dielectric material and the novel process of chip inductor, this chip inductor is expected to use under the ultra-high frequency of 2-5GHz.
The preparation method of the cordierite-base microcrystal glass-ceramics medium material used for multi-layer inductor that the present invention proposes may further comprise the steps:
1, with the following column weight amount of raw material percentage mix: MgO (5-25wt%), Al
2O
3(20-25wt%), SiO
2(50-70wt%), B
2O
3(1-5wt%) and P
2O
5(1-5wt%) (B wherein
2O
3With H
2BO
3Form is introduced, P
2O
5With NH
4H
2PO
4Form is introduced);
2, add ethanol in above-mentioned compound, additional proportion is: compound and alcoholic acid weight ratio are 1.5-2.5, after wet-mixed 3-5 hour, descended dry 2-3 hour at 60-80 ℃, in the high alumina crucible of packing into, fusion cast glass, glass melting temperature is 1400-1600 ℃, is incubated 2-4 hour;
3, will obtain transparent vitreum behind the glass quenching, wet ball grinding glass to median size is 0.5-2.0 μ m, at the molded one-tenth sequin of the pressure of 100-120MPa, burns till under 850-1050 ℃, and soaking time is 2-6 hour, promptly obtains material of the present invention.
The advantage of the inventive method is:
Adopted B
2O
3-P
2O
5-MgO-Al
2O
3-SiO
2System, and dielectric material, especially this material that cordierite glass-ceramic technology is made the high-frequency multilayer chip inductor can be lower than under 1000 ℃ of temperature and Au, Ag/Pd, the Cu electrode burns and sinters into requirement (DIELECTRIC CONSTANT=5.7, the 1MHz that porcelain reaches low-k and low-dielectric loss altogether; Dielectric loss tan δ=0.0013,1MHz).
(1) this patent has selected trichroite (its specific inductivity is 4.5) to be the principal crystalline phase of dielectric material in numerous low Jie's porcelain, and boron (phosphorus) silicate glass is glassy phase (specific inductivity of borate glass is 3.7).
(2) owing to introduced B
2O
3And P
2O
5Chemical reagent has not only promoted crystallization but also accelerated densification process, has reduced the agglomerating temperature.Boron trioxide can reduce the high temperature viscosity of glass, promotes the densification process of glass; Because the asymmetry of Vanadium Pentoxide in FLAKES molecular structure but it usually becomes a kind of crystallization agent of glass.Add an amount of B in this experiment
2O
3And P
2O
5, reached the purpose of low-temperature sintering cordierite glass-ceramic, and most of crystal exists with the α-Jin Qingshi form and a spot of boron (phosphorus) silicate glass.This is very favourable to the specific inductivity and the dielectric loss that reduce material.
Embodiments of the invention.
Embodiment 1:
Weighing MgO (8.5wt%), Al
2O
3(21.5wt%), SiO
2(70wt%), B
2O
3(2.5wt%) and P
2O
5(2.5wt%) (B wherein
2O
3With H
2BO
3Form is introduced, P
2O
5With NH
4H
2PO
4Form is introduced), add (60 ℃ of adequate amount of ethanol (material is 1.5 with the alcoholic acid weight ratio) wet-mixed 3hr after drying, 2hr), pack in the high alumina crucible fusion cast glass (1450 ℃ of insulations, 4 hours) into, transparent vitreum will be obtained behind the glass quenching, wet ball grinding glass to median size is 0.8 μ m, at the dry-pressing formed one-tenth sequin of the pressure of 100MPa, burns till by the firing temperature of formulating that (maximum sintering temperature is 880 ℃; Soaking time is 4 hours), promptly obtain material of the present invention.
Embodiment 2:
Weighing MgO (15wt%), Al
2O
3(25wt%), SiO
2(60wt%), B
2O
3(0.5wt%) and P
2O
5(0.5wt%) (B wherein
2O
3With H
2BO
3Form is introduced, P
2O
5With NH
4H
2PO
4Form is introduced), add (70 ℃ of adequate amount of ethanol (material is 2.0 with the alcoholic acid weight ratio) wet-mixed 4hr after drying, 3hr), pack in the high alumina crucible fusion cast glass (1500 ℃ of insulations, 2 hours) into, transparent vitreum will be obtained behind the glass quenching, wet ball grinding glass to median size is 0.67 μ m, at the dry-pressing formed one-tenth sequin of the pressure of 110MPa, burns till by the firing temperature of formulating that (maximum sintering temperature is 900 ℃; Soaking time is 3 hours), promptly obtain material of the present invention.
Embodiment 3:
Weighing MgO (20wt%), Al
2O
3(25wt%), SiO
2(55wt%), B
2O
3(1.5wt%) and P
2O
5(1.5wt%) (B wherein
2O
3With H
2BO
3Form is introduced, P
2O
5With NH
4H
2PO
4Form is introduced), add (80 ℃ of adequate amount of ethanol (material is 2.0 with the alcoholic acid weight ratio) wet-mixed 4hr after drying, 3hr), pack in the high alumina crucible fusion cast glass (1550 ℃ of insulations, 2 hours) into, transparent vitreum will be obtained behind the glass quenching, wet ball grinding glass to median size is 1.42 μ m, at the dry-pressing formed one-tenth sequin of the pressure of 115MPa, burns till by the firing temperature of formulating that (maximum sintering temperature is 950 ℃; Soaking time is 4 hours), promptly obtain material of the present invention.
Embodiment 4:
Weighing MgO (25wt%), Al
2O
3(25wt%), SiO
2(50wt%), B
2O
3(4.5wt%) and P
2O
5(4.5wt%) (B wherein
2O
3With H
2BO
3Form is introduced, P
2O
5With NH
4H
2PO
4Form is introduced), add (75 ℃ of adequate amount of ethanol (material is 1.8 with the alcoholic acid weight ratio) wet-mixed 3.5hr after drying, 2hr), pack in the high alumina crucible fusion cast glass (1600 ℃ of insulations, 1 hour) into, transparent vitreum will be obtained behind the glass quenching, wet ball grinding glass to median size is 1.02 μ m, at the dry-pressing formed one-tenth sequin of the pressure of 120MPa, burns till by the firing temperature of formulating that (maximum sintering temperature is 1020 ℃; Soaking time is 2 hours), promptly obtain material of the present invention.
Claims (1)
1, a kind of preparation method of cordierite-base microcrystal glass-ceramics medium material used for multi-layer inductor, this method may further comprise the steps:
(1) with the following column weight amount of raw material percentage mix:
MgO 5-25wt％
Al
2O
3 20-25wt％
SiO
2 50-70wt％
B
2O
3 1-5wt％
P
2O
5 1-5wt％
(2) add ethanol in above-mentioned compound, additional proportion is: compound and alcoholic acid weight ratio are 1.5-2.5, after wet-mixed 3-5 hour, descended dry 2-3 hour at 60-80 ℃, in the high alumina crucible of packing into, fusion cast glass, glass melting temperature is 1400-1600 ℃, is incubated 2-4 hour;
(3) will obtain transparent vitreum behind the glass quenching, wet ball grinding glass to median size is 0.5-2.0 μ m, at the molded one-tenth sequin of the pressure of 100-120MPa, burns till under 850-1050 ℃, and soaking time is 2-6 hour, promptly obtains material of the present invention.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01102209 CN1120812C (en) | 2001-01-18 | 2001-01-18 | Process for preparing cordierite-base microcrystal glass-ceramics medium material used for multi-layer inductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01102209 CN1120812C (en) | 2001-01-18 | 2001-01-18 | Process for preparing cordierite-base microcrystal glass-ceramics medium material used for multi-layer inductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1304894A true CN1304894A (en) | 2001-07-25 |
| CN1120812C CN1120812C (en) | 2003-09-10 |
Family
ID=4652557
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|---|---|---|---|
| CN 01102209 Expired - Fee Related CN1120812C (en) | 2001-01-18 | 2001-01-18 | Process for preparing cordierite-base microcrystal glass-ceramics medium material used for multi-layer inductor |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7034637B2 (en) | 2003-04-21 | 2006-04-25 | Murata Manufacturing Co., Ltd. | Electronic component |
| CN101148323B (en) * | 2007-09-06 | 2010-06-16 | 北京科技大学 | Low-temperature co-fired cordierite series glass-ceramic substance power and preparation method thereof |
| CN101503307B (en) * | 2009-02-27 | 2010-11-10 | 航天材料及工艺研究所 | Dielectric property acceleration stabilization method for silicon dioxide based composite material |
| CN103641463A (en) * | 2013-12-05 | 2014-03-19 | 湖南省新化县长江电子有限责任公司 | Ceramic tube for explosionproof fuse for automobile and preparation method of ceramic tube |
| CN105271763A (en) * | 2015-11-20 | 2016-01-27 | 中国地质大学（武汉） | Low-dielectric low-expanded cordierite glass-ceramic material taking perlite as main raw materials and preparation method thereof |
| WO2019191350A1 (en) * | 2018-03-28 | 2019-10-03 | Corning Incorporated | Boron phosphate glass-ceramics with low dielectric loss |
| CN111170634A (en) * | 2020-01-10 | 2020-05-19 | 浙江大学 | High-alumina phosphosilicate glass suitable for chemical strengthening and chemically toughened glass |
| CN111320391A (en) * | 2020-03-04 | 2020-06-23 | 景德镇陶瓷大学 | Colorless transparent cordierite glass ceramic and preparation method thereof |
-
2001
- 2001-01-18 CN CN 01102209 patent/CN1120812C/en not_active Expired - Fee Related
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7034637B2 (en) | 2003-04-21 | 2006-04-25 | Murata Manufacturing Co., Ltd. | Electronic component |
| CN101148323B (en) * | 2007-09-06 | 2010-06-16 | 北京科技大学 | Low-temperature co-fired cordierite series glass-ceramic substance power and preparation method thereof |
| CN101503307B (en) * | 2009-02-27 | 2010-11-10 | 航天材料及工艺研究所 | Dielectric property acceleration stabilization method for silicon dioxide based composite material |
| CN103641463A (en) * | 2013-12-05 | 2014-03-19 | 湖南省新化县长江电子有限责任公司 | Ceramic tube for explosionproof fuse for automobile and preparation method of ceramic tube |
| CN105271763A (en) * | 2015-11-20 | 2016-01-27 | 中国地质大学（武汉） | Low-dielectric low-expanded cordierite glass-ceramic material taking perlite as main raw materials and preparation method thereof |
| CN105271763B (en) * | 2015-11-20 | 2017-11-24 | 中国地质大学（武汉） | It is a kind of using perlite as low Jie's low bulk cordierite glass-ceramic material of primary raw material and preparation method thereof |
| WO2019191350A1 (en) * | 2018-03-28 | 2019-10-03 | Corning Incorporated | Boron phosphate glass-ceramics with low dielectric loss |
| CN111971257A (en) * | 2018-03-28 | 2020-11-20 | 康宁股份有限公司 | Borophosphate glass ceramics with low dielectric loss |
| US11236012B2 (en) | 2018-03-28 | 2022-02-01 | Corning Incorporated | Boron phosphate glass-ceramics with low dielectric loss |
| CN111170634A (en) * | 2020-01-10 | 2020-05-19 | 浙江大学 | High-alumina phosphosilicate glass suitable for chemical strengthening and chemically toughened glass |
| CN111320391A (en) * | 2020-03-04 | 2020-06-23 | 景德镇陶瓷大学 | Colorless transparent cordierite glass ceramic and preparation method thereof |
| CN111320391B (en) * | 2020-03-04 | 2021-09-24 | 景德镇陶瓷大学 | Colorless transparent cordierite glass ceramic and preparation method thereof |
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