CN1302520C - Method for forming polycrystalline series film layer by utilizing laser crystallization - Google Patents
Method for forming polycrystalline series film layer by utilizing laser crystallization Download PDFInfo
- Publication number
- CN1302520C CN1302520C CNB031544444A CN03154444A CN1302520C CN 1302520 C CN1302520 C CN 1302520C CN B031544444 A CNB031544444 A CN B031544444A CN 03154444 A CN03154444 A CN 03154444A CN 1302520 C CN1302520 C CN 1302520C
- Authority
- CN
- China
- Prior art keywords
- rete
- substrate
- polycrystalline series
- fringe region
- laser crystallization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The present invention provides a method for forming polycrystalline series film layers by utilizing laser crystallization, which can avoid damaging a non-polycrystalline series layer at the fringe region of a base board during laser annealing. The concentration distribution of preparing gas in a deposition reaction chamber is controlled to form a non-polycrystalline series layer of which the thickness increases from the fringe region of a base board to the side edge of the base board on the base board, and then the non-polycrystalline series layer is under the process of laser annealing to be converted into a polycrystalline series layer. Thus, the method overcomes the defects of the prior art, avoids damaging the amorphous silicon layer at the fringe region by high energy laser irradiation and enables the laser irradiation with high scanning speed and high energy not need to avoid the fringe region, and therefore, the region used for manufacturing a panel can not be reduced, and contraposition problems in subsequent preparation can not occur.
Description
Technical field
The present invention system relates to a kind of method of utilizing laser crystallization to form rete, refers in particular to a kind of continous way lateral solidification method (sequential lateral solidification that utilizes; SLS) carry out low temperature polycrystalline silicon and handle (low temperature poly silicon process; LTPS process) the laser crystallization that utilizes forms the method for polycrystalline series rete.
Background technology
Thin-film transistor is an active digit group type flat-panel screens active member (active element) commonly used, is commonly used to drive active LCD (active matrix type liquid crystaldisplay), active organic electroluminescent display devices such as (active matrix type organiclight-emitting display).Semiconductor silicon film in the thin-film transistor generally can be divided into polysilicon (poly-silicon) film and amorphous silicon (amorphous silicon, a-Si:H) film.
Though amorphous silicon membrane possesses the reduction process temperature, is fit to a large amount of produce because of available vapour deposition process prepares, treatment technology than maturation thereby yield also than advantages such as height, but imitate mobility and make characteristics such as transistor can be applicable in the circuit of high service speed, the integration of drive circuit is preferable because the conductive characteristic of polysilicon is good, use the thin-film transistor of polysilicon film to have higher field, add the exploitation that low temperature polycrystalline silicon is handled, make polysilicon membrane gradually replace amorphous silicon membrane.
The manufacture method of common polysilicon membrane roughly has three kinds, first kind is to utilize deposition step directly to deposit formation, second kind is to utilize heat energy to make it crystallize into polysilicon membrane after forming amorphous silicon membrane earlier, and the third is to utilize laser to make it crystallize into polysilicon membrane after forming amorphous silicon membrane earlier.Yet above-mentioned method has following defective, and the defective of first method is to deposit the enough thick polysilicon film that could form big crystal grain, and its surface evenness is poor, and required treatment temperature is also up to 600 degree.Though second method can produce thin thickness and uniform polysilicon membrane, however the required temperature of its crystallisation step up to 600 degree, heat budget height, and the required time is long, can influence productive rate.The treatment temperature of the third method is low, and is known with quasi-molecule laser annealing (excimer laser annealing; ELA) mode makes amorphous silicon be converted to polysilicon, but its sweep speed is approximately 0.2mm/sec, and energy is approximately 370mJ/cm
2, not only productive rate is low, is subject to the size of energy, and the crystallization situation often only betides the surface, can't reach to make whole layer amorphous silicon recrystallize into the purpose of polysilicon.Though use sweep speed fast (30mm/sec) and laser energy height (600mJ/cm
2) continous way lateral solidification (SLS) laser annealing handle and to make amorphous silicon change into polysilicon, can solve the above problems.But, because amorphous silicon membrane is deposited on thickness and heterogeneity on the glass substrate edge, as shown in Figure 1, it illustrates the schematic diagram of the amorphous silicon layer 14 that deposition forms on the resilient coating 12 that is known in glass substrate 10, usually the amorphous silicon layer 14 at glass substrate 10 fringe region A can be thin than zone line (being main region) C, when laser is beaten thin location at amorphous silicon layer 14, promptly fringe region A can be damaged because of laser easily.Yet this regional A normally back segment handles the alignment mark lay down location that will do contraposition, therefore the interruption that causes back segment to handle easily.
With regard to continous way lateral solidification (SLS) laser annealing is handled,, therefore must beyond glass, just begin irradiation because the sweep speed (scan rate) of SLS laser board will have a segment distance to do acceleration up to 30mm/sec.
Be the problem of avoiding fringe region A to be damaged because of laser, existing wire harness laser (line beamlaser) all is from amorphous silicon layer 14 evenly, and promptly main region C begins irradiation.And because continous way lateral solidification (SLS) laser annealing processing must just begin irradiation beyond glass, therefore shutter (shutter) opening point of control laser radiation in the board is located at thin film deposition and evenly locates, to avoid substrate edge region A amorphous silicon layer 14 impaired.As shown in Figure 1, setting shutter opening point is D and E, but shutter complete opening point is d and e, so it is inhomogeneous to have the suffered laser energy of the amorphous silicon membrane 14 of a section, has reduced the zone that can be used to make panel on the contrary.
Because the above-mentioned defective of known technology, for fear of the laser of the high sweep speed of high-energy the amorphous silicon film layer of fringe region is caused damage, therefore, the inventor proposes the method for utilizing laser crystallization to form polycrystalline silicon membrane of the present invention.
Summary of the invention
The technical problem to be solved in the present invention is: a kind of method of utilizing laser crystallization to form the polycrystalline series rete is provided, this method can avoid the amorphous layer of substrate edge region to suffer damage through laser annealing the time under the prerequisite that can not influence the region area that can be used to make panel.
Technical solution of the present invention is: a kind of method of utilizing laser crystallization to form the polycrystalline series rete comprises at least:
One substrate is provided, has a zone, an edge and a main region;
Form an amorphous rete on this substrate, wherein this amorphous rete is in the average thickness of this fringe region average thickness greater than this main region; And
This amorphous rete is carried out laser annealing, to transfer a polycrystalline series rete to.
The aforesaid method of utilizing laser crystallization to form the polycrystalline series rete, described amorphous rete is an amorphous silicon film layer, this polycrystalline series rete is a polycrystalline silicon membrane.
The aforesaid method of utilizing laser crystallization to form the polycrystalline series rete, the method for carrying out laser annealing is for using continous way lateral solidification method.
The aforesaid method of utilizing laser crystallization to form the polycrystalline series rete, described fringe region are toward interior zone to 20mm from this side.
The aforesaid method of utilizing laser crystallization to form the polycrystalline series rete, the step of this amorphous rete of described formation on this substrate, comprise: in a reative cell, carry out a plasma and strengthen chemical vapor deposition process, and control the CONCENTRATION DISTRIBUTION that one in this reative cell handled gas, this processing gas reaction is deposited on this substrate, forms above-mentioned amorphous rete.
The aforesaid method of utilizing laser crystallization to form the polycrystalline series rete, this handles the method for the CONCENTRATION DISTRIBUTION of gas described control, comprising: heighten the concentration that inputs to corresponding to this processing gas of this fringe region.
The aforesaid method of utilizing laser crystallization to form the polycrystalline series rete, it is characterized in that: the method for the CONCENTRATION DISTRIBUTION of this processing gas of described control, comprise: this processing gas is produced in this fringe region be detained, make the concentration of this processing gas that is positioned at this fringe region higher.
The aforesaid method of utilizing laser crystallization to form the polycrystalline series rete, making this processing gas produce the method for being detained in this substrate edge region comprises: place one of this substrate and shift on the platform in this reative cell, corresponding to this substrate outside, a baffle plate is set.
A kind of method of utilizing laser crystallization to form the polycrystalline series rete comprises at least:
One substrate is provided, and it has a zone, an edge and a main region;
This substrate is placed on carries out a chemical vapor deposition process in the reative cell, and control one in this reative cell and handle the CONCENTRATION DISTRIBUTION of gas in this reative cell, make the concentration that is higher than this main region corresponding to the concentration of this fringe region, this processing gas reaction is deposited on this substrate, forms an amorphous rete; And described amorphous rete carried out laser annealing, to transfer a polycrystalline series rete to.
The aforesaid method of utilizing laser crystallization to form the polycrystalline series rete, described fringe region are from the past interior zone to 20mm of the side of this substrate.
Feature of the present invention and advantage are as follows:
The present invention changes the profile of amorphous silicon layer by the condition of control deposition, with the thickness that the reaches fringe region thickness more than or equal to main region, makes the amorphous silicon layer of fringe region impaired to avoid high-octane laser radiation meeting.
The present invention makes the high-octane laser radiation of high sweep speed need not avoid fringe region by the thickness of the amorphous silicon layer that increases fringe region, therefore can not reduce the zone that can be used to make panel, does not also have the generation of subsequent treatment contraposition problem.
The present invention uses formation and has the amorphous silicon layer of the thickness of fringe region more than or equal to the profile of the thickness of main region by the CONCENTRATION DISTRIBUTION of control and treatment gas in reative cell.
Description of drawings
Fig. 1 is the schematic diagram that is known in the amorphous silicon layer that deposition forms on the resilient coating of glass substrate;
Fig. 2 is the condition of the present invention by the control deposition processes, the schematic diagram that the thickness of the amorphous silicon film layer edge region that is deposited on resilient coating top is increased progressively toward the substrate side direction;
When Fig. 3 carries out back and forth for laser radiation scanning, the schematic diagram of the relative velocity of laser and substrate edge region;
Fig. 4 is for inputing to the concentration of the processing gas in the reative cell by control, makes corresponding to fringe region concentration greater than the concentration corresponding to main region, with the schematic diagram of the amorphous silicon layer that forms profile shown in Figure 2;
Fig. 5 is for handling gas and produce in substrate edge region and be detained by installing the baffle plate that is made of vertical panel additional in shifting on the platform, making, and makes the concentration of the processing gas of retention areas be higher than other zone, with the schematic diagram of the amorphous silicon layer that forms profile shown in Figure 2;
Fig. 6 is by installing the baffle plate that is made of vertical panel, level board and whirligig additional in shifting on the platform, make and handle gas in substrate edge region generation delay, and the concentration that makes the processing gas of retention areas is higher than other zone, with the schematic diagram of the amorphous silicon layer that forms profile shown in Figure 2.
The drawing reference numeral explanation:
10, glass substrate 12,22, resilient coating 14,24, amorphous silicon layer A, fringe region
C, main region D, E, shutter opening point d, e, shutter complete opening point 30, substrate side
32, thickness increases progressively width 20, substrate 40, the reative cell of direction w, fringe region
44, baffle plate 44a, vertical panel 44b, level board 44c, whirligig
16, shift the breakover point 46 of platform D ', E ', laser radiation scanning, the retention areas of processing gas
P, corresponding to the processing gas q of fringe region, corresponding to the processing gas of main region
Embodiment
For technical problem to be solved by this invention, technical scheme and effect thereof being done further understanding and understanding, with specific embodiment and conjunction with figs., be described in detail as follows now:
Please refer to Fig. 2, the present invention makes the thickness of the amorphous silicon film layer 24 edge region A that are deposited on resilient coating 22 tops increase progressively toward substrate side 30 directions (as the direction of arrow of label 32) by the condition of control deposition processes; Perhaps form one deck in the average thickness of substrate edge region A amorphous silicon film layer 24 greater than the average thickness of main region C.Afterwards, amorphous silicon film layer 24 is carried out the laser annealing of the high sweep speed of high-energy, to transfer a polycrystalline silicon membrane to.Wherein, the method for carrying out laser annealing is a continous way lateral solidification method.
Fringe region A typically refers to from substrate side 30 and counts toward in, and width w is about the scope of 20mm.Main region C is a panel area, and fringe region A can place alignment mark usually, handles contraposition as back segment and uses.
The breakover point of laser radiation scanning is at the D ' and the E ' in substrate 20 outsides, and when fringe region A was arrived in laser radiation, because the thickness of this regional amorphous silicon film layer 24 is not thin excessively, so the high-energy of laser can not make this regional amorphous silicon film layer 24 be damaged.
It should be noted that laser radiation scanning carries out back and forth, is 0 at the laser of breakover point D ' and E ' and the relative velocity of substrate 20, slowly accelerates to constant speed degree, for example 30mm/sec again.Reaching the relative position of constant speed degree, can be before laser does not shine substrate 20, or in laser radiation to fringe region A but not shine the border (being the dotted line place) of main region C preceding.Situation with the latter, as shown in Figure 3, because the laser radiation sweep speed is slower than constant speed degree 30mm/sec near near the zone the substrate side 30, therefore increase near the thickness of the amorphous silicon layer 24 the substrate side 30, its thickness successively decreases toward border (the being the dotted line place) direction of main region C, can avoid in the case, because of high-octane laser causes damage with relative low translational speed near the amorphous silicon layer 24 the substrate side 30.
Moreover shutter can come flyback retrace therebetween, repeats to do the action of open and close.Certainly the present invention can also come flyback retrace to do the action of open and close therebetween, and opening point can be considered the problem that fringe region A is impaired, can be the complete opening shutter before laser does not reach substrate 20 therefore.
Form the method for the thicker amorphous silicon film layer 24 of fringe region A, can reach by the CONCENTRATION DISTRIBUTION of handling gas in the control cvd reactive chamber.The CONCENTRATION DISTRIBUTION of handling gas is for improving the concentration corresponding to fringe region A, makes to handle gas reaction and be deposited on the substrate and form the thicker amorphous silicon film layer 24 of fringe region A.The mode of deposition for example is that plasma increases chemical vapour deposition technique (PECVD), and that wherein handles gas mainly consists of silane (SiH
4), depositing temperature is 250 °-300 °.
Handle the method for the CONCENTRATION DISTRIBUTION of gas in the control cvd reactive chamber, for example shown in Figure 4, can input to concentration in the reative cell 40 by control corresponding to the processing gas p of fringe region A, make it greater than concentration corresponding to the processing gas q of main region C.The concentration of handling gas p can also further be controlled to according to the direction towards substrate side 30 and increase progressively, and the concentration of handling gas q is then all identical.
Perhaps, as shown in Figure 5 and Figure 6, make and handle gas and produce in the fringe region A of substrate and be detained, and make the concentration of processing gas of this retention areas 46 higher.Its method for example is the transfer platform 16 upper substrates 20 arranged outside baffle plates 44 in reative cell 40, makes to handle gas 46 generation delays in the zone, and the processing gas concentration in this zone 46 is increased.Wherein plate washer 44 is made of vertical panel 44a, and as shown in Figure 5, the end of vertical panel 44a is fixed in and shifts on the platform 16; Or formed by vertical panel 44a, whirligig 44c and level board 44b, wherein the end of vertical panel 44a is fixed in and shifts on the platform 16, the other end is connected with level board 44b by whirligig 44c, and level board 44b can do rotation by whirligig 44c, is beneficial to the turnover of substrate 20.
Above-mentioned amorphous silicon film layer also can be the amorphous rete of other material, can make the amorphous rete transfer the polycrystalline series rete to by above-mentioned method equally.
Though the present invention discloses with specific embodiment; but it is not in order to limit the present invention; any those skilled in the art; the displacement of the equivalent assemblies of under the prerequisite that does not break away from design of the present invention and scope, having done; or, all should still belong to the category that this patent is contained according to equivalent variations and modification that scope of patent protection of the present invention is done.
Claims (10)
1. method of utilizing laser crystallization to form the polycrystalline series rete comprises at least:
One substrate is provided, has a zone, an edge and a main region;
Form an amorphous rete on this substrate, wherein this amorphous rete is in the average thickness of this fringe region average thickness greater than this main region; And
This amorphous rete is carried out laser annealing, to transfer a polycrystalline series rete to.
2. the method for utilizing laser crystallization to form the polycrystalline series rete as claimed in claim 1, it is characterized in that: described amorphous rete is an amorphous silicon film layer, this polycrystalline series rete is a polycrystalline silicon membrane.
3. the method for utilizing laser crystallization to form the polycrystalline series rete as claimed in claim 1 is characterized in that: the method for carrying out laser annealing is for using continous way lateral solidification method.
4. the method for utilizing laser crystallization to form the polycrystalline series rete as claimed in claim 1 is characterized in that: described fringe region is toward interior zone to 20mm from this side.
5. the method for utilizing laser crystallization to form the polycrystalline series rete as claimed in claim 1, it is characterized in that: the step of this amorphous rete of described formation on this substrate, comprise: in a reative cell, carry out a plasma and strengthen chemical vapor deposition process, and control the CONCENTRATION DISTRIBUTION that one in this reative cell handled gas, this processing gas reaction is deposited on this substrate, forms above-mentioned amorphous rete.
6. the method for utilizing laser crystallization to form the polycrystalline series rete as claimed in claim 5, it is characterized in that: the method for the CONCENTRATION DISTRIBUTION of this processing gas of described control comprises: heighten the concentration that inputs to corresponding to this processing gas of this fringe region.
7. the method for utilizing laser crystallization to form the polycrystalline series rete as claimed in claim 5, it is characterized in that: the method for the CONCENTRATION DISTRIBUTION of this processing gas of described control, comprise: this processing gas is produced in this fringe region be detained, make the concentration of this processing gas that is positioned at this fringe region higher.
8. the method for utilizing laser crystallization to form the polycrystalline series rete as claimed in claim 7, it is characterized in that: make this processing gas produce the method for being detained and comprise: in this reative cell, place one of this substrate and shift on the platform in this substrate edge region, corresponding to this substrate outside, a baffle plate is set.
9. method of utilizing laser crystallization to form the polycrystalline series rete comprises at least:
One substrate is provided, and it has a zone, an edge and a main region;
This substrate is placed on carries out a chemical vapor deposition process in the reative cell, and control one in this reative cell and handle the CONCENTRATION DISTRIBUTION of gas in this reative cell, make the concentration that is higher than this main region corresponding to the concentration of this fringe region, this processing gas reaction is deposited on this substrate, forms an amorphous rete; And described amorphous rete carried out laser annealing, to transfer a polycrystalline series rete to.
10. the method for utilizing laser crystallization to form the polycrystalline series rete as claimed in claim 9 is characterized in that: described fringe region is from the past interior zone to 20mm of the side of this substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031544444A CN1302520C (en) | 2003-09-29 | 2003-09-29 | Method for forming polycrystalline series film layer by utilizing laser crystallization |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031544444A CN1302520C (en) | 2003-09-29 | 2003-09-29 | Method for forming polycrystalline series film layer by utilizing laser crystallization |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1604276A CN1604276A (en) | 2005-04-06 |
| CN1302520C true CN1302520C (en) | 2007-02-28 |
Family
ID=34659982
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031544444A Expired - Fee Related CN1302520C (en) | 2003-09-29 | 2003-09-29 | Method for forming polycrystalline series film layer by utilizing laser crystallization |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1302520C (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103871854A (en) * | 2014-03-24 | 2014-06-18 | 上海华力微电子有限公司 | Laser annealing equipment |
| CN108400089B (en) * | 2017-02-07 | 2020-08-04 | 中芯国际集成电路制造(上海)有限公司 | Laser annealing method |
| CN106910683B (en) * | 2017-02-09 | 2020-01-14 | 武汉华星光电技术有限公司 | Control method and device for laser annealing |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001332737A (en) * | 2000-05-23 | 2001-11-30 | Seiko Epson Corp | Method for manufacturing thin film transistor, method for manufacturing active matrix board and electro-optic device |
| JP2002289525A (en) * | 2001-02-28 | 2002-10-04 | Sharp Corp | Method for controlling crystallographic orientation in polysilicon film annealed by laser |
-
2003
- 2003-09-29 CN CNB031544444A patent/CN1302520C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001332737A (en) * | 2000-05-23 | 2001-11-30 | Seiko Epson Corp | Method for manufacturing thin film transistor, method for manufacturing active matrix board and electro-optic device |
| JP2002289525A (en) * | 2001-02-28 | 2002-10-04 | Sharp Corp | Method for controlling crystallographic orientation in polysilicon film annealed by laser |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1604276A (en) | 2005-04-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1083617C (en) | Semiconductor device, its producing method and electo-optical device | |
| US8435843B2 (en) | Treatment of gate dielectric for making high performance metal oxide and metal oxynitride thin film transistors | |
| CN104659285A (en) | TFT backboard manufacturing method and structure suitable for AMOLED | |
| CN1716532A (en) | Method of fabricating display device | |
| US20200176612A1 (en) | Thin-film transistor and manufacturing method therefor, array substrate and display device | |
| CN1501449A (en) | Method for making polysilicon layer | |
| CN1514469A (en) | Crystal mask, amorphous silicon crystallization method and method of manufacturing array base plate using same | |
| CN1719583A (en) | Method of crystallizing semiconductor film and method of manufacturing display device | |
| CN1828832A (en) | Laser apparatus and manufacturing method of thin film transistor using the same | |
| CN1652167A (en) | Active matrix panel | |
| CN1722385A (en) | Method of fabricating semiconductor device and semiconductor fabricated by the same method | |
| CN1501437A (en) | Mask for polycrystallization and method of manufacturing thin film transistor using polycrystallization mask | |
| CN1842919A (en) | Thin-film transistor and production method therefor | |
| CN1302520C (en) | Method for forming polycrystalline series film layer by utilizing laser crystallization | |
| CN102646714A (en) | Thin film transistor, array substrate and preparation method thereof | |
| CN1707810A (en) | Thin film transistor and method of fabricating the same | |
| CN1639872A (en) | A method for manufacturing a thin film transistor using poly silicon | |
| CN1742360A (en) | The polycrystallization method, make the method for polycrystalline SiTFT and be used for the laser irradiating device of this method | |
| CN102629555A (en) | Gate insulation layer and preparation method thereof, TFT and preparation method thereof, array substrate and display device | |
| CN1237589C (en) | Method and device for manufacturing active matrix device containing top grid type TFT | |
| CN1713397A (en) | Thin film transistor and method of fabricating the same | |
| CN1296765C (en) | Method for producing thin film transistor liquid crystal display panel | |
| CN1265446C (en) | Method for making film transistor | |
| CN1604341A (en) | Controlled film transistor, its preparation method and electroluminescent display apparatus containing same | |
| CN1581427A (en) | Multicrystalline silicon film manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070228 Termination date: 20160929 |