CN1300857C - Method of mfg. microoptical lens - Google Patents
Method of mfg. microoptical lens Download PDFInfo
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- CN1300857C CN1300857C CNB2004100344763A CN200410034476A CN1300857C CN 1300857 C CN1300857 C CN 1300857C CN B2004100344763 A CNB2004100344763 A CN B2004100344763A CN 200410034476 A CN200410034476 A CN 200410034476A CN 1300857 C CN1300857 C CN 1300857C
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Abstract
The present invention relates to a method for manufacturing a microoptical lens. A wall columnar structure is formed on a basal plate of a microoptical or microphotoelectric system and is covered with high molecular polymer material. Then, the high molecular polymer material is attached to both sides of the wall columnar structure in a suspending mode by using lateral etching for a basal plate at the bottom of a column. The high molecular polymer material is cohered to form a flat convex lens shape due to surface tension by isolating manufacture technology and proper heating treatment. A symmetrical double-convex microlens, an asymmetric double-convex microlens, a plano-convex microlens, etc. which are made of composite material can be directly formed by combining the wall columnar structure by controlling the attaching amount of a high molecular covering layer on both sides of the wall columnar structure. The shape of a high molecular microlens can also be rubbed by etching manufacture technology on the wall columnar structure to form a microlens made of single material.
Description
Technical field
The present invention relates to a kind of manufacture method of micro optical lens, the micro optical lens that particularly a kind of generally semiconductor fabrication process is made is beneficial to the micro optical lens manufacture method that micro-optic or low-light electric system are integrated.
Background technology
As the general closed planar optical system, the space of light be delivered in exist equally in plane micro-optic or the low-light electric system disperse, problem such as optical axis alignment; And the microminiaturization of optics is more because of producing comparatively serious diffraction effect near system wavelength.The edge-emission N-type semiconductor N radium-shine (Edge-EmittingLaser Diode) commonly used with the low-light electric system is example, it has active region 11 as shown in Figure 1, the aperture that presents long and narrow in the YZ section, cause relatively large Z to far-field divergence angle, transmit not only bad for the space, and the coupling efficiency between waveguide (as optical fiber) is not good yet, therefore often needs by the optics with focusing function or optical mode attitude conversion (light beam sphering) to reduce loss yet.
In " PLC Hybrid Integration Technology and Its Appli-cation to PhotonicComponents ", IEEE Journal Of Selected Topics In Quantum Electronics, vol.6, No.1,2000, the optical transceiver secondary module described in the pp.4-13 utilizes the gradual change type fiber waveguide to reach and revises light beam mode to promote the purpose of coupling efficiency.But this mode involves meticulousr complicated manufacture craft, as tapered waveguide etching, laser mirror surface etching, and secondary brilliant (Epitoxy) of heap of stone etc.; Secondly, the gradual change type waveguide causes the considerable influence on the assembly superperformance for directly being additional to the light output end of light emission component (semiconductor is radium-shine) in this example.And at U.S.Pat.No.5,963,577 and 6,160,672 disclose to be utilized and to add the optics (as spherical lens, cylinder lenses etc.) put on the substrate of plane low-light electric system, to reach the purpose that promotes coupling efficiency.But all more than hundreds of microns, system substrate must have the putting groove of corresponding size to the optics size that this mode is used, and has so increased the complexity in system substrate size and the preparation; Once more, optics must impose the mechanical property of mechanism of ammonium fixation (as sticker) with enhanced system.In U.S.Pat.No.5, then disclose a radium-shine module in 420,722, it utilizes a lenticule uprightly to be carried on light output end, reach the purpose of revising light beam mode, but this example also needs extra mechanism of ammonium fixation, and the application of single component must be cut after in the lenticule lift-launch.In addition in U.S.Pat.No.5,646,928 light that disclosed store and read in the micro-optic read/write head of usefulness, utilize semiconductor micro electromechanical to make, form required optics respectively at silicon (Si) substrate surface, as Fresnel lens, optical splitter (Beam splitter), reflector (Reflector) etc., again it is lifted the upright micro-optical systems that forms the optical axis parallel substrate, necessary support is provided simultaneously.But significantly, remove and build the complexity of putting, this micro-system machinery and thermal stability are its main consideration of using.In U.S.Pat.No.5,079,130,5,225,935,5,286,338,5,298,366,5,324,623 and 6,249,034 grade all discloses with the high-temperature baking photoresistance and makes it form lenticular mode or its application of deriving, but described all be planar microlens (optical axis vertical substrate), therefore can't directly apply to the plane micro-optic or the low-light electric system of optical axis parallel substrate, yet it utilizes the prepared slick and sly lens surface of photoresistance surface tension, really can be for the usefulness of improving optical system coupled efficient.
In sum, prior art still has following for improvements:
1. manufacture craft is comparatively complicated.
2. need bigger optics, and increase the purpose that the system substrate size just can reach the lifting coupling efficiency.
3. can't directly apply to the plane micro-optic or the low-light electric system of optical axis parallel substrate.
4. when lenticule and micro-optical systems are integrated, need add fixing mostly or support.
Summary of the invention
The object of the present invention is to provide a kind of manufacture method of micro optical lens, put to simplify building of micro-optical systems.
Micro optical lens is the vertical type lens, its manufacture method is to be used in that (as semiconductor substrate, glass substrate) forms wall column shape structure on the substrate of micro-optic or low-light electric system, the height of this wall column shape structure defines and can form lenticular height, after macromolecule polymer material (as photoresistance) covering, utilize the lateral etch of post substrate, make the outstanding both sides that invest wall column shape structure of polymer membrane, through isolating manufacture craft and suitable heat treated, the outstanding attached polymer membrane of wall column shape texture edge becomes a planoconvex spotlight shape because of poly-in the surface tension.But the combining wall column structure is directly as the composite lenticule or utilize its shape of etching process inscription rubbing to form the mono-material lenticule on wall column shape structure; Also the deal number of may command wall column shape structure both sides photoresistance is to form symmetry or asymmetrical lenticule.
The present invention defines lenticular size by the height of wall column shape structure, and goes out lenticular radius of curvature and thickness by the volume definable of polymer membrane.In other words, the present invention is the semiconductor fabrication process by knowing, accurately position, size and the optical axis height of the formation of control vertical type lenticule in the application of long-pending body micro-optic or low-light electric system, can provide the moulding in the lump and the automatic alignment ability of optical axis of poly-lens group.And the column structure by semiconductor material also can provide the effect of filtering simultaneously at the wave band below the specific wavelength, forms the filtering lenticule.
Micro optical lens manufacture method proposed by the invention when comparing mutually with prior art, has following advantage:
1. micro optical lens of the present invention generally semiconductor fabrication process is made.
2. the invention provides the lenticule of simplification and the integration mode of micro-optical systems.
But in the manufacture process elasticity control operation condition to form the lenticule of difformity and function.
Description of drawings
Fig. 1 is the radium-shine assembly schematic diagram of edge-emission N-type semiconductor N;
Fig. 2 A～H is the stage manufacture craft schematic diagram of embodiment one;
Fig. 3 is the schematic perspective view of the vertical microlens of embodiment one formation;
Fig. 4 A～F is the stage manufacture craft schematic diagram of embodiment two;
Fig. 5 A～H makes schematic diagram in the stage of embodiment three.
Embodiment
The present invention proposes a kind of manufacture method of micro optical lens, can be for making long-pending body micro-optic or low-light electric system.The manufacture method of this micro optical lens is to utilize general semiconductor fabrication process, be included in selected substrate (as semiconductor substrate, glass substrate) and go up wall column shape structure of formation, with outstanding its both sides that invest of macromolecule polymer material (as photoresistance) film forming, heat treatment makes polymer membrane form planoconvex spotlight because of poly-in the surface tension, and utilizes etching process inscription rubbing high molecular polymer lens on wall column shape structure.And, can form symmetry or asymmetrical micro optical lens by controlling the polymer membrane volume of wall column shape structure both sides.
Below utilize three embodiment to describe micro optical lens manufacture method of the present invention in detail, all adopt the substrate and the wall column shape structure of specific photoresistance, specific materials among the embodiment, but the present invention is still applicable to other combination of materials.In embodiment one, the lenticule of made is a biconvex lens, it can be easy composite (combination of photoresistance and silicon dioxide) symmetry/asymmetric double convex lens according to the demand of using, or further forms higher mono-material (silicon dioxide) symmetry/asymmetric double convex lens of stability by etching process.Among the embodiment two, serve as that basis making photoelectric subassembly platform carries preposition planoconvex spotlight with embodiment one then, platform waits approximately and is higher than the lens centre so that the mechanism of passive aligning to be provided, and this embodiment can be considered the blank that the present invention is applied to micro-optic/low-light electric system.Among the embodiment three, the lenticule of made is the composite biconvex lens, its wall column shape structure is semiconductor material (indium phosphide), the planoconvex spotlight that each outstanding attached photoresistance of two sides forms, the interface of photoresistance lens and semiconductor wall column then provides antireflection mechanism by dielectric substance layer, and the compound lens of this embodiment can reach the effect of optical filtering simultaneously by the semiconductor wall column.
Embodiment one:
Shown in Fig. 2 A to H, each production phase of biconvex lenticule is as follows:
Shown in Fig. 2 A and Fig. 2 B, utilize etching mode on silicon substrate 20, to form silicon dioxide wall column shape structure 211.At first utilize the rapid chemical gas deposition to form the silicon dioxide 21 of suitable thickness (about 30 to 60 microns) on silicon substrate 20, this thickness must be greater than designed lenticule height (about 25 to 55 microns), and the refractive index of silicon dioxide is about 1.45～1.47.Be definition and formation column structure, on silicon dioxide, must impose etch shield 22 with definition column structure width, adopt the chromium film or the nickel chromium triangle film of about 5000 dusts can reach preferable etch shield effect, (Inductively CoupledPlasma-Reactive Ion Etching, ICP-RIE) high-rate etching silicon dioxide can reach the etching selectivity more than 100 down to utilize induction coupled plasma reactive ion etching.The definition of chromium film shielding can be arranged in pairs or groups by general little shadow manufacture craft with formation, and metal is lifted off or the metal etch manufacture craft is reached, and it be big that its width (about 30 to 70 microns) needs more designed lenticule thickness (about 20 to 60 microns).In the present embodiment, C is adopted in the etching of silicon dioxide column structure
4F
8/ O
2Gas composition, etch-rate can reach about 0.3m/min, etch depth is 25 to 55 microns, this is worth corresponding formed lenticule height.After wall column shape structure forms, can carry out the macromolecule polymer material film forming and cover, the ma-P series photoresistance that adopts Micro Resist Technology company to produce in the present embodiment puts on the test piece surface in the rotary coating mode.Shown in Fig. 2 C is the profile of photoresistance 23 after the photoresistance coating.Make the required photoresistance volume of lenticule by little shadow manufacture craft definition, photoresistance 23 develops the back shown in Fig. 2 D, is post-develop resistance 231.If at this moment photoresistance is carried out high temperature (more than 120 ℃) baking, photoresistance will form the section 232 as Fig. 2 D ' because of capillary effect and the attachment surface that is mutually the right angle (top, the side of silicon dioxide wall column shape structure and bottom surface).Desire to make photoresistance to form form of lens, must make its only single plane of adhering to of tool, and this biconvex lens needed be the side of wall column shape structure.For making photoresistance break away from the top and bottom surface of wall column shape structure, need utilize dry type and Wet-type etching manufacture craft respectively.At first utilize the Wet-type etching manufacture craft that the silicon dioxide that post-develop hinders 231 belows is made lateral etches.Select the dilution HF aqueous solution (as 1HF:10H in the present embodiment
2O) or oxide layer buffering etchant (BOE) reach and isolate photoresistance and silicon dioxide adhering in wall column shape structure bottom surface.Silicon dioxide wall column shape structure 212 after this lateral etches is shown in Fig. 2 E.For avoiding photoresistance in etching time bottom the phenomenon that breaks away from wall column shape texture edge to be arranged, the high-temperature baking (about 100 ℃) of appropriateness can promote the tack of photoresistance and wall column shape texture edge before etching, improves the uniformity of lenticule making on the bulk silicon wafer.Then utilize dry-etching to remove the photoresistance (top photoresistance) of wall column shape superstructure.Adopt O in the present embodiment
2Active-ion-etch (RIE) removes this top photoresistance, because photoresistance applies for utilizing rotary coating, the photoresistance of column structure top (especially near the corner part) is thin a lot of compared to the photoresistance on other plane, therefore after the etching shown in Fig. 2 F, this moment, photoresistance was separated in the column structure both sides, promptly was separated in the photoresistance 233 and the photoresistance 234 that is separated in the column structure left side on column structure right side.In this step, the photoresistance that another purpose that removes of column structure top photoresistance is to isolate the left and right sides, the both sides photoresistance presents uneven or state out of control when avoiding high-temperature baking.Therefore the removing to proceed to and reach this and separate effect and get final product of top photoresistance for example eliminates the corner photoresistance fully and gets final product, and might not Remove All the top photoresistance.In addition, this top photoresistance also can utilize exposure or long developing time to remove when the little shadow manufacture craft that forms shown in Fig. 2 D.
Photoresistance is only outstanding after above-mentioned manufacture craft invests wall column shape structure both sides, and independent separately, for making lenticular foundation structure.This structure carried out 150 ℃, 10 minutes baking under nitrogen environment, the both sides photoresistance all gathers into the planoconvex spotlight shape because of surface tension is interior, shown in Fig. 2 G,, the right side photoresistance gathers into planoconvex spotlight shape 236 because of surface tension is interior with the left side photoresistance for gathering into planoconvex spotlight shape 235 because of surface tension is interior.The both sides photoresistance planoconvex spotlight height that is obtained under the above-mentioned condition be 25～55 microns, thick be that 10～30 microns, radius of curvature are about 12～40 microns.The lenticular height of this photoresistance plano-convex, thick, can reach the requirements of micro-optic/low-light electric system by control photoresistance volume with radius of curvature.Therefore can form symmetry or asymmetrical compound biconvex lenticule by little shadow manufacture craft control both sides photoresistance volume.
Because the ma-P that present embodiment adopts series photoresistance (Micro Resist Technology Co., Ltd.) its refractive index is about 1.5～1.6, with refractive index 1.45～1.47 differences of silicon dioxide below 10%, reflection loss approximately only-26dB, therefore can be directly as the biconvex lenticule of composite.In addition, ma-P series photoresistance belongs to positive photoresistance, has the doubt that is subjected to catalysis used by light, therefore can adopt negative photoresistance such as ma-N series (Micro Resist Technology Co., Ltd.) or BPR-100 (Shipley Co., Ltd.).Secondly, further consider thermal stability (as back segment high temperature manufacture craft) and weatherability, the dry-etching that can utilize tool lateral etches ability (high tropism), low etching selectivity on silicon dioxide column structure, forms the silicon dioxide mono-material biconvex lens 213 (having removed the chromium film) shown in Fig. 2 H with the inscription rubbing of photoresistance lens shape.This dry-etching needs to adopt CF under very low or zero rf bias environment
4/ O
2Gas composition makes the main mechanism of etching of photoresistance and silicon dioxide be chemical breakdown, but not physical bombardment or chemical deposition, as utilize chemical dry-type etch equipment (CDE, Chemical Dry/Downstream Etcher); And pass through CF
4/ O
2Proportion of composing adjust etching selectivity, another degree of freedom that changes the lenticule radius of curvature is provided.As shown in Figure 3, be the formed stand-type silicon dioxide biconvex lenticule 31 of present embodiment on the silicon substrate, its to cross-member shown in Figure 1 in Z to the effect that has convergence or focus on.
Embodiment two:
Shown in Fig. 4 A to four F, in the present embodiment, it is as follows to form each manufacture craft stage that comprises a component platform and the lenticular low-light level of a preposition plano-convex platform:
Shown in Fig. 4 B, utilize etching mode on silicon substrate 40, to form silicon dioxide wall column shape structure 411 and silicon dioxide component platform 412.At first on silicon substrate 40, utilize electricity slurry gain chemical vapour deposition (CVD) (Plasma-Enhanced Chemical Vapor Deposition fast, PECVD) silicon dioxide 41 of a suitable thickness of formation (about 60 microns), shown in Fig. 4 A, the lenticule height (about 50 microns) that this thickness must carry greater than the institute desire, and the refractive index of silicon dioxide is about 1.45～1.47.It is wide with definition wall column shape structure to impose etch shield 421 on silicon dioxide earlier, after utilizing the ICP-RIE etch silicon dioxide to form the degree of depth (about 25 microns) of half height of lens to about desire, impose second etch shield 422 again with definitions component platform size, utilize ICP-RIE to continue etch silicon dioxide to total etch depth and equal the lens height (50 microns) that desire forms. Etch shield 421 and 422 all adopts the chromium film (or nickel chromium triangle film) of about 5000 dusts to obtain preferable etch effect, and it can reach the etching selectivity more than 100 under ICP-RIE high-rate etching silicon dioxide.The definition of chromium film shielding can be lifted off or the realization of metal etch manufacture craft by general little shadow manufacture craft collocation metal with formation.In the present embodiment, C is adopted in the etching of silicon dioxide wall column shape structure and component platform
4F
8/ O
2Gas composition, etch-rate can reach about 0.3/min.
After wall column shape structure 411 and component platform 412 formation, promptly carry out the macromolecule polymer material film forming and cover, the ma-P series photoresistance that adopts Micro Resist Technology company to produce in the present embodiment puts on the test piece surface in the rotary coating mode.Fig. 4 B signal section 43 that photoresistance distributes after the photoresistance coating.By the required photoresistance volume of little shadow manufacture craft definition lenticule, photoresistance 43 develops the back shown in Fig. 4 C, is post-develop resistance 431 and 432.Desire to make photoresistance to form form of lens by surface tension, must make its only single plane of adhering to of tool, this plano-convex lenticule is needed to be the side of wall column shape structure.Aforementioned little shadow manufacture craft has reached and has removed the purpose that photoresistance is adhered on column structure top, then then can utilize Wet-type etching to make the lateral etches of photoresistance 431 below silicon dioxide.Adopt the dilution HF aqueous solution (as 1HF:10H in the present embodiment
2O) or BOE reach and isolate photoresistance and silicon dioxide in the adhering to of wall column shape structure bottom surface, the silicon dioxide wall column shape structure after lateral etches is as the silicon dioxide component platform 412 among Fig. 4 D.For avoiding photoresistance in etching time bottom the phenomenon that breaks away from wall column shape texture edge to be arranged, the high-temperature baking of appropriateness before etching (about 100 ℃) can promote the tack of photoresistance and wall column shape texture edge, improves the uniformity of lenticule making on the bulk silicon wafer.
Outstanding attached photoresistance film 432 left sides, column structure right side comprise component platform and coated by photoresistance 432 after above-mentioned manufacture craft, and left and right sides photoresistance becomes isolation.This structure is carried out 120 ℃, 10 minutes baking under nitrogen environment, right side photoresistance 431 gathers into lenticular because of surface tension is interior, poly-institute one-tenth lens 433 in the right side photoresistance shown in Fig. 4 E; Gather institute's one-tenth lens 434 in the photoresistance of left side then because of the still complete coating of many attachment surfaces left side structure, and present so that minimal surface is long-pending.The right side photoresistance lens height that is obtained under the above-mentioned condition is about 50 microns, thickly is about 13 microns, radius of curvature and is about 30 microns.The lenticular height of this photoresistance, thick, can reach the requirements of this low-light electric system by control right side photoresistance volume with radius of curvature.
The dry-etching that then utilizes high tropism, low etching selectivity with right side photoresistance planoconvex spotlight external form inscription rubbing on silicon dioxide wall column shape structure, the silicon dioxide mono-material planoconvex spotlight 413 (removed chromium film) of formation shown in Fig. 4 F, left side component platform 412 are coated by photoresistance then and are roughly kept original appearance.This dry-etching needs to adopt CF under very low or zero rf bias environment
4/ O
2Gas composition, make the main mechanism of etching of photoresistance and silicon dioxide be chemical breakdown, but not physical bombardment or chemical deposition, as utilize chemical dry-type etch equipment (CDE, Chemical Dry/Downstream Etcher); And pass through CF
4/ O
2Proportion of composing adjust etching selectivity, another degree of freedom that changes the lenticule radius of curvature is provided.
Light emission component is placed on the component platform of present embodiment, cover brilliant bonding techniques, can reach the purpose of mode correction or light beam sphering as utilization; And light receiving element is placed on the component platform of present embodiment, then can reach the purpose that restrains or be focused into irradiating light beam; Both all can obtain the lifting on the coupling efficiency.
Embodiment three:
Shown in Fig. 5 A to five H, in the present embodiment, each manufacture craft stage of composite biconvex lenticule is as follows:
Shown in Fig. 5 A and Fig. 5 B, define an etch shield 51 and utilize the conductor etching manufacture craft of knowing on semiconductor substrate 50, to form a wall column shape structure 52, and utilize dielectric medium plated film and the etching process known to plate antireflection dielectric substance layer 53 in wall column shape structure 52 two sides.In the present embodiment, semiconductor substrate 50 is n type inp (InP) substrate, in last utilization electricity slurry gain chemical oxygen phase flow process (PECVD), little shadow (Photolithography), and active-ion-etch manufacture crafts such as (RIE) define 0.2 micron thickness, 30 microns wide silica (SiOx) etch shield 51, adopt 1HCl:3H
3PO
4Etching solution carries out InP Wet-type etching manufacture craft, etch-rate is about 1 micron of per minute, formed InP wall column shape structure 52 high about 80 microns (the corresponding lenticule height that is formed), the top is wide to be about 25 microns, and this wall column shape structure is for being defined in parallel wafer secondary flat direction, i.e. [x, y, z]=[1,1,0] direction; Wall column shape structure two sides utilize electricity slurry gain chemical oxygen phase flow process (PECVD) and active-ion-etch (RIE) manufacture craft to form about 0.18 micron silicon nitride (SiNx) anti-reflecting layer 53, and refractive index is about 2.0.After this wall column shape structure forms, can carry out the macromolecule polymer material film forming and cover, the ma-P series photoresistance that adopts Micro ResistTechnology company to produce in the present embodiment puts on the test piece surface in the rotary coating mode.Fig. 5 C is depicted as the profile 54 of photoresistance coating back photoresistance.Make the required photoresistance volume of lenticule by little shadow manufacture craft definition, and utilize long developing time to remove the photoresistance of the very thin photoresistance of wall column shape superstructure with divider wall column structure both sides.Finish post-develop resistance section and present as shown in Fig. 5 D, be right side, the back photoresistance section 541 and left side, the back photoresistance section 542 that develops of developing.For making the photoresistance bottom surface break away from the InP substrate, make the only outstanding two sides that invest wall column shape structure 52 of photoresistance, present embodiment adopts 1HCl:3H
3PO
4Etching solution carries out InP base plate wet etching process.In etching process, etching solution not only continues etching InP substrate downwards, also carries out lateral etches simultaneously, thereby makes the photoresistance bottom surface break away from the InP substrate.After this Wet-type etching manufacture craft, wall column shape structure is down extended 40 microns approximately, at this moment photoresistance section 541 and 542 outstanding two sides that invest wall column shape structure 52 shown in Fig. 5 E.The high-temperature baking of appropriateness before etching (about 100 ℃) can promote the tack of photoresistance and wall column shape texture edge, reduces the phenomenon of subsiding or peeling off, and improves the uniformity that lenticule is made on the whole InP substrate.Other must be noted that; behind twice InP Wet-type etching; remove about 120 microns InP substrate surface thickness altogether; if do not provide the etching protection in the InP substrate back; SiOx or SiNx as the PECVD growth; same InP substrate back also will remove about 120 micron thickness, influence the mechanical strength of substrate 501.
Behind above-mentioned etching process, photoresistance is outstanding to invest wall column shape structure two sides, and independent separately, for making lenticular foundation structure.This structure is carried out 150 ℃, 10 minutes baking under nitrogen environment, the both sides photoresistance all gathers into the planoconvex spotlight shape because of surface tension is interior, shown in Fig. 5 F, gathers into planoconvex spotlight shape 544 for gathering in the photoresistance of right side in planoconvex spotlight shape 543 and the left side photoresistance.Must be noted that because present embodiment adopts the Wet-type etching manufacture craft produce bubble for avoiding photoresistance when the hot-fluid, the reply sample is made dried before hot-fluid, as place under normal temperature, the dry nitrogen environment, fall into the moisture content that invests on the sample structure to remove.The both sides photoresistance plano-convex lenticule height that present embodiment obtained is about 80 microns, thickly is about 15 microns, radius of curvature and is about 60 microns.Can reach the demand of micro-optic/low-light electric system by control both sides photoresistance volume, shown in Fig. 5 G, asymmetric compound biconvex lenticule that is constituted by lenticular right side of asymmetric compound biconvex 545 and the lenticular left side 546 of asymmetric compound biconvex and the compound plano-convex lenticule 547 shown in Fig. 5 H.
Because the ma-P that present embodiment adopts series photoresistance (Micro Resist Technology Co., Ltd.) its refractive index is about 1.5～1.6, with refractive index 1.45～1.47 differences of silicon dioxide below 10%, reflection loss approximately only-26dB, therefore can be directly as the biconvex/plano-convex lenticule of composite.And, can produce filter effect, but as the about wave band below 0.9 micron of InP wall column shape structure filtering of present embodiment, filtering short wavelength excitation source during practical use to incident light wave by the semiconductor wall column shape structure in this composite lenticule.But it must be emphasized that ma-P series photoresistance belongs to positive photoresistance, be subjected to have the influence that is subjected to catalysis in the light use for a long time, therefore can adopt negative photoresistance such as ma-N series (Micro Resist Technology Co., Ltd.) or BPR-100 (Shipley Co. is Ltd.) to promote lenticular stability.
Claims (65)
1. the manufacture method of a micro optical lens is characterized in that, comprises following steps:
A., substrate is provided, and it comprises the dielectric substance layer of growing up on substrate and the substrate at least;
B. above this dielectric substance layer, apply the etching shade, with the definition etching area;
C. this etching area is removed first thickness downwards, and keep second thickness, make this dielectric substance layer surface form wall column shape structure;
D. applying polymer membrane is covered in and has on the substrate of wall column shape structure;
E. on this polymer membrane, define the micro optical lens volume;
F. carry out etching process and remove the dielectric substance layer that this polymer membrane below contacts, polymer membrane is hanged invest on these wall column shape structure two sides;
G. remove the polymer membrane of this wall column shape superstructure wholly or in part, the polymer membrane of these wall column shape structure two sides is isolated fully;
H. these wall column shape structure two sides are separated outstanding attached polymer membrane and carry out high-temperature baking, make and gather into the planoconvex spotlight shape in the polymer membrane, form the biconvex lenticule.
2. the manufacture method of a kind of micro optical lens according to claim 1, it is characterized in that: the described substrate of steps A is applicable to micro-optical systems.
3. the manufacture method of a kind of micro optical lens according to claim 1, it is characterized in that: the described substrate of steps A is applicable to the low-light electric system.
4. the manufacture method of a kind of micro optical lens according to claim 1, it is characterized in that: the described substrate material of steps A is a silicon.
5. the manufacture method of a kind of micro optical lens according to claim 1, it is characterized in that: the described dielectric substance layer formation of steps A method is the rapid chemical gas deposition.
6. the manufacture method of a kind of micro optical lens according to claim 1 is characterized in that: the described dielectric substance layer thickness of steps A needs greater than the lenticule height.
7. the manufacture method of a kind of micro optical lens according to claim 1, it is characterized in that: the described etching shade of step B width is greater than the lenticule width.
8. the manufacture method of a kind of micro optical lens according to claim 1, it is characterized in that: the described etching shade of step B is the chromium film.
9. the manufacture method of a kind of micro optical lens according to claim 1, it is characterized in that: the described etching shade of step B is the nickel chromium triangle film.
10. the manufacture method of a kind of micro optical lens according to claim 1 is characterized in that: step B is with little shadow manufacture craft collocation etching process definition etching area.
11. the manufacture method of a kind of micro optical lens according to claim 1 is characterized in that: step B is lifted off the definition etching area with little shadow manufacture craft collocation metal.
12. the manufacture method of a kind of micro optical lens according to claim 1 is characterized in that: described first thickness of step C is contour with the lens of desire formation.
13. the manufacture method of a kind of micro optical lens according to claim 1 is characterized in that: the described polymer membrane of step D has hot-fluid cohesion matter.
14. the manufacture method of a kind of micro optical lens according to claim 1 is characterized in that: the described polymer membrane of step D is a photoresist.
15. the manufacture method of a kind of micro optical lens according to claim 1 is characterized in that: step e is to utilize little shadow manufacture craft definition lenticule volume.
16. the manufacture method of a kind of micro optical lens according to claim 1 is characterized in that: step e is to utilize little shadow manufacture craft collocation etching process definition lenticule volume.
17. the manufacture method of a kind of micro optical lens according to claim 1 is characterized in that: the described etching process of step F is the Wet-type etching manufacture craft.
18. the manufacture method of a kind of micro optical lens according to claim 17 is characterized in that: described Wet-type etching manufacture craft, before etching with 100 ℃ of bakings.
19. the manufacture method of a kind of micro optical lens according to claim 1 is characterized in that: step G is the polymer membrane that removes this wall column shape superstructure with the dry-etching manufacture craft.
20. the manufacture method of a kind of micro optical lens according to claim 1 is characterized in that: the described high-temperature baking of step H, its temperature is greater than 120 ℃.
21. the manufacture method of a kind of micro optical lens according to claim 1 is characterized in that: the described biconvex lenticule of step H is a composite biconvex lenticule.
22. the manufacture method of a kind of micro optical lens according to claim 1 is characterized in that: step H be utilize the dry-etching manufacture craft with the inscription rubbing of lenticule external form on this wall column shape structure, form mono-material biconvex lenticule.
23. the manufacture method of a kind of micro optical lens according to claim 1 is characterized in that: can be by this polymer membrane volume of control to adjust height, the thick and radius of curvature of micro optical lens.
24. the manufacture method of a micro optical lens is characterized in that, comprises following steps:
A., substrate is provided, and it comprises the dielectric substance layer of growing up on substrate and the substrate at least;
B. above this dielectric substance layer, apply first etching shade definition etching area; And the second etching shade definition component platform zone;
C. this etching area is removed first thickness downwards, and keep second thickness, make this dielectric substance layer surface form wall column shape structure;
D. applying polymer membrane is covered in and has on the substrate of wall column shape structure;
E. on this polymer membrane, define the micro optical lens volume;
F. carry out etching process and remove the dielectric substance layer that this polymer membrane below contacts, polymer membrane is hanged invest on these wall column shape structure two sides;
G. these wall column shape structure two sides are separated outstanding attached polymer membrane and carry out high-temperature baking, make and gather into the planoconvex spotlight shape in the polymer membrane;
H. utilize the low etching process inscription rubbing wall column shape structure outside high molecular polymer lens-shape of selecting ratio on dielectric medium wall column shape structure, form preposition dielectric medium planoconvex spotlight.
25. the manufacture method of a kind of micro optical lens according to claim 24 is characterized in that: the described substrate of steps A is applicable to micro-optical systems.
26. the manufacture method of a kind of micro optical lens according to claim 24 is characterized in that: the described substrate of steps A is applicable to the low-light electric system.
27. the manufacture method of a kind of micro optical lens according to claim 24 is characterized in that: the described substrate material of steps A is a silicon.
28. the manufacture method of a kind of micro optical lens according to claim 24 is characterized in that: the described dielectric substance layer formation of steps A method is the rapid chemical gas deposition.
29. the manufacture method of a kind of micro optical lens according to claim 24 is characterized in that: the described dielectric substance layer thickness of steps A needs greater than the lenticule height.
30. the manufacture method of a kind of micro optical lens according to claim 24 is characterized in that: the described first etching shade width of step B is greater than the lenticule width.
31. the manufacture method of a kind of micro optical lens according to claim 24 is characterized in that: the described first etching shade of step B is the chromium film.
32. the manufacture method of a kind of micro optical lens according to claim 24 is characterized in that: the described first etching shade of step B is the nickel chromium triangle film.
33. the manufacture method of a kind of micro optical lens according to claim 24 is characterized in that: the height of the described land regions of step B is half of this etching area height.
34. the manufacture method of a kind of micro optical lens according to claim 24 is characterized in that: step B is with little shadow manufacture craft collocation etching process definition etching area and land regions.
35. the manufacture method of a kind of micro optical lens according to claim 24 is characterized in that: step B is lifted off definition etching area and land regions with little shadow manufacture craft collocation metal.
36. the manufacture method of a kind of micro optical lens according to claim 24 is characterized in that: the lens of described first thickness of step C and desire formation are contour.
37. the manufacture method of a kind of micro optical lens according to claim 24 is characterized in that: the described polymer membrane of step D has hot-fluid cohesion matter.
38. the manufacture method of a kind of micro optical lens according to claim 24 is characterized in that: the described polymer membrane of step D is a photoresist.
39. the manufacture method of a kind of micro optical lens according to claim 24 is characterized in that: step e is to utilize little shadow manufacture craft definition lenticule volume.
40. the manufacture method of a kind of micro optical lens according to claim 24 is characterized in that: step e is to utilize little shadow manufacture craft collocation etching process definition lenticule volume.
41. the manufacture method of a kind of micro optical lens according to claim 24 is characterized in that: the described etching process of step F is the Wet-type etching manufacture craft.
42. the manufacture method according to the described a kind of micro optical lens of claim 41 is characterized in that: described Wet-type etching manufacture craft, before etching with 100 ℃ of bakings.
43. the manufacture method of a kind of micro optical lens according to claim 24 is characterized in that: the high-temperature baking of step G, its temperature is greater than 120 ℃.
44. the manufacture method of a kind of micro optical lens according to claim 24 is characterized in that: by controlling this polymer membrane volume with the height that is adjusted into optical lens, thick and radius of curvature.
45. the manufacture method of a micro optical lens is characterized in that, comprises following steps:
A., substrate is provided, and it comprises the dielectric substance layer of growing up on substrate and the substrate at least;
B. above this dielectric substance layer, apply etching shade definition etching area;
C. this etching area is removed first thickness downwards, and keep second thickness, make this dielectric substance layer surface form wall column shape structure;
D. respectively form an antireflection dielectric substance layer in these wall column shape structure two sides;
E. applying polymer membrane is covered on the wall column shape structure with antireflection dielectric medium;
F. on this polymer membrane, define the micro optical lens volume;
G. carry out etching process and remove the dielectric substance layer that this polymer membrane below contacts, polymer membrane is hanged invest on the described wall column shape of the step e structure two sides;
H. these wall column shape structure two sides are separated outstanding this attached polymer membrane and carry out high-temperature baking, make and gather into the planoconvex spotlight shape in the polymer membrane, form the composite biconvex lens.
46. the manufacture method according to the described a kind of micro optical lens of claim 45 is characterized in that: the described substrate of steps A is applicable to micro-optical systems.
47. the manufacture method according to the described a kind of micro optical lens of claim 45 is characterized in that: the described substrate of steps A is applicable to the low-light electric system.
48. the manufacture method according to the described a kind of micro optical lens of claim 45 is characterized in that: the described substrate material of steps A is a n type inp.
49. the manufacture method according to the described a kind of micro optical lens of claim 45 is characterized in that: the described dielectric substance layer thickness of steps A needs greater than the lenticule height.
50. the manufacture method according to the described a kind of micro optical lens of claim 45 is characterized in that: the described etching shade of step B width is greater than the lenticule width.
51. the manufacture method according to the described a kind of micro optical lens of claim 45 is characterized in that: the described etching shade of step B material is a silica.
52. the manufacture method according to the described a kind of micro optical lens of claim 45 is characterized in that: the described etching area of step B defines with little shadow manufacture craft.
53. the manufacture method according to the described a kind of micro optical lens of claim 45 is characterized in that: the described etching area of step B defines with the active-ion-etch manufacture craft.
54. the manufacture method according to the described a kind of micro optical lens of claim 45 is characterized in that: the described etching area of step B is with electricity slurry gain chemical oxygen phase flow definition.
55. the manufacture method according to the described a kind of micro optical lens of claim 45 is characterized in that: the lens that described first thickness of step C and desire form are contour.
56. the manufacture method according to the described a kind of micro optical lens of claim 45 is characterized in that: the described antireflecting dielectric substance layer of step D is made with electricity slurry gain chemical oxygen phase flow process.
57. the manufacture method according to the described a kind of micro optical lens of claim 45 is characterized in that: the described antireflecting dielectric substance layer of step D is made with the active-ion-etch manufacture craft.
58. the manufacture method according to the described a kind of micro optical lens of claim 45 is characterized in that: the described antireflecting dielectric substance layer of step D is a silicon nitride.
59. the manufacture method according to the described a kind of micro optical lens of claim 45 is characterized in that: the described polymer membrane of step e has hot-fluid cohesion matter.
60. the manufacture method according to the described a kind of micro optical lens of claim 45 is characterized in that: the described etching process of step G is the Wet-type etching manufacture craft.
61. the manufacture method according to the described a kind of micro optical lens of claim 45 is characterized in that: the described high-temperature baking of step H, its temperature be greater than 120 ℃, and before hot-fluid dried.
62. the manufacture method according to the described a kind of micro optical lens of claim 45 is characterized in that: by controlling this polymer membrane volume to adjust high, the thick and radius of curvature of micro optical lens.
63. the manufacture method according to the described a kind of micro optical lens of claim 45 is characterized in that: the described composite biconvex lens of step H is symmetrical.
64. the manufacture method according to the described a kind of micro optical lens of claim 45 is characterized in that: the described composite biconvex lens of step H is asymmetric.
65. the manufacture method according to the described a kind of micro optical lens of claim 45 is characterized in that: the described composite biconvex lens of step H comprises the composite planoconvex spotlight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100344763A CN1300857C (en) | 2004-04-14 | 2004-04-14 | Method of mfg. microoptical lens |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100344763A CN1300857C (en) | 2004-04-14 | 2004-04-14 | Method of mfg. microoptical lens |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1564043A CN1564043A (en) | 2005-01-12 |
| CN1300857C true CN1300857C (en) | 2007-02-14 |
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| CNB2004100344763A Expired - Fee Related CN1300857C (en) | 2004-04-14 | 2004-04-14 | Method of mfg. microoptical lens |
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| GB2500670A (en) * | 2012-03-29 | 2013-10-02 | Ibm | Method of fabrication of a micro-optics device with curved surface defects |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0507456A2 (en) * | 1991-03-06 | 1992-10-07 | Matsushita Electronics Corporation | Solid-state imaging device and method of manufacturing the same |
| US5593913A (en) * | 1993-09-28 | 1997-01-14 | Sharp Kabushiki Kaisha | Method of manufacturing solid state imaging device having high sensitivity and exhibiting high degree of light utilization |
| WO1998013120A1 (en) * | 1996-09-24 | 1998-04-02 | Bioriginal Limited | Settlement tanks |
| CN1266204A (en) * | 1999-02-19 | 2000-09-13 | 三星电子株式会社 | Lenticule, its combination with vertical cavity surface radiation laser and making method thereof |
| CN1400486A (en) * | 2002-08-23 | 2003-03-05 | 中国科学院上海微系统与信息技术研究所 | Chip for photomodulation thermoimaging system and its making method |
-
2004
- 2004-04-14 CN CNB2004100344763A patent/CN1300857C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0507456A2 (en) * | 1991-03-06 | 1992-10-07 | Matsushita Electronics Corporation | Solid-state imaging device and method of manufacturing the same |
| US5593913A (en) * | 1993-09-28 | 1997-01-14 | Sharp Kabushiki Kaisha | Method of manufacturing solid state imaging device having high sensitivity and exhibiting high degree of light utilization |
| WO1998013120A1 (en) * | 1996-09-24 | 1998-04-02 | Bioriginal Limited | Settlement tanks |
| CN1266204A (en) * | 1999-02-19 | 2000-09-13 | 三星电子株式会社 | Lenticule, its combination with vertical cavity surface radiation laser and making method thereof |
| CN1400486A (en) * | 2002-08-23 | 2003-03-05 | 中国科学院上海微系统与信息技术研究所 | Chip for photomodulation thermoimaging system and its making method |
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| Publication number | Publication date |
|---|---|
| CN1564043A (en) | 2005-01-12 |
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