CN1297799A - Laser corrosion method and its apparatus - Google Patents
Laser corrosion method and its apparatus Download PDFInfo
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- CN1297799A CN1297799A CN 00134285 CN00134285A CN1297799A CN 1297799 A CN1297799 A CN 1297799A CN 00134285 CN00134285 CN 00134285 CN 00134285 A CN00134285 A CN 00134285A CN 1297799 A CN1297799 A CN 1297799A
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Abstract
The invention provides a laser etching method for optical ablation working by irradiating a work article formed of an inorganic material with a laser light from a laser oscillator capable of emitting in succession light pulses of a large energy density in space and time with a pulse radiation time not exceeding 1 picosecond, wherein, in laser etching of the work article formed of the inorganic material by irradiation thereof with the laser light from the laser oscillator with a predetermined pattern and with a predetermined energy density, there is utilized means for preventing deposition of a work by-product around the etching position.
Description
The present invention relates to laser corrosion method and come the laser corrosion device of processing work, relate to more precisely and in the process of the workpiece that the processing inorganic substances constitute, can work and around the corrosion position, do not produce the laser corrosion method and the laser corrosion device that are used to the material of micromechanics, IC or diode component is carried out retrofit of deposition with laser beam.
Structural detail is being carried out using the harmonic wave of excimer laser or YAG laser usually in the process of retrofit with laser processing.
Yet, because the energy density of the laser in the oscillating impulse is limited in being to the maximum the level of 100 megawatts, so this laser processing is difficult to be applied to the workpiece that inorganic material is made, and the sublimating ablation that only can be applied to mainly the workpiece is made up of organic material is processed.Therefore, with comprising that photoresist coating, resist exposure are graphical, photoresist developing, utilizing photoresist figure and photoresist to ablate to the photoetching process of steps such as each material corrodes, obtained the retrofit of the workpiece that inorganic material forms, but this technology has the big shortcoming of production facility investment that cost that the processing step by complexity causes increases and consider process time.
In order to solve these shortcomings, the applicant is in Japanese patent application No.11-316760 for example, a kind of laser processing that structure in the workpiece of inorganic material composition is carried out retrofit with sublimating ablation processing has been proposed, the method has been utilized following characteristics, promptly from pulse launch time be 1 psec or shorter laser oscillator emitted laser, has high energy density in time, and owing to the laser irradiation time is very short, so laser is not converted into heat energy and directly is converted into lattice key cleavage energy.
Yet, the above-mentioned laser processing that is used for sublimating ablation processing can corrode the workpiece of being made up of inorganic material by means of ablating distillation, but in some material, the atom or the molecule of distillation and gasification cause compound immediately, thereby be liquefied in the corrosion position in its vicinity and deposit and solidify, thereby can't keep clean near the corrosion position, or can hinder corrosion itself owing to the deposition of this byproduct.
In crystallization or amorphous solid-state material, because covalent bond, it is obvious especially that these shortcomings become.The reason of this phenomenon is not clear, but because in based on the crystalline material of metallic bond or ionic bond and in the non-crystalline material based on ionic bond, above-mentioned shortcoming is not obvious, so think that this is that to have a material of the higher covalent bond of bond energy intrinsic.
Consider noted earlierly, the purpose of this invention is to provide a kind of in the laser corrosion process of the workpiece that inorganic material is formed, can work and the laser corrosion method and the laser corrosion device that around the corrosion position, deposition do not take place and can carry out retrofit the material of micromechanics, IC or diode component.
According to the present invention, utilize the laser corrosion method and the laser corrosion device of the described formation in following (1)-(35), can reach above-mentioned purpose:
(1) by means of since be no more than the laser of the laser oscillator of the light pulse of macro-energy density on room and time of 1 psec from pulse radiation time successively, the workpiece that the irradiation inorganic material is formed, and be used for the laser corrosion method that optics is ablated and processed:
Wherein, in the laser corrosion process that the workpiece of inorganic material being formed to carry out its irradiation from the laser that has predetermined pattern and have a laser oscillator of predetermined energy density carries out, utilized the device that prevents operative minor product deposition around the corrosion position.
(2) according to the laser corrosion method of (1), wherein be used for preventing the device of operative minor product deposition around the corrosion position, be used to by means of laser irradiation processing work with intermitant irradiation with the interval of being longer than the pulse laser frequency of oscillation.
(3) according to the laser corrosion method of (1), wherein be used for preventing the device of operative minor product deposition around the corrosion position, be used to by means of laser irradiation, in the Working position of workpiece, produce under the state of gas stream and processing work.
(4) according to the laser corrosion method of (3), wherein the gas stream in the workpiece Working position is an air stream.
(5) according to the laser corrosion method of (3), wherein the gas stream in the workpiece Working position is a nitrogen current.
(6) according to the laser corrosion method of (1), wherein be used for preventing the device of operative minor product deposition around the corrosion position, be used to by means of laser irradiation, by means of carrying out laser irradiation and processing work under the state that is at workpiece in the air atmosphere in addition.
(7) according to the laser corrosion method of (6), wherein the atmosphere beyond the air is the gas of atomic weight less than the nitrogen molecular atomic weight.
(8) according to the laser corrosion method of (7), gas wherein is helium.
(9) according to the laser corrosion method of (7), gas wherein is hydrogen.
(10) according to the laser corrosion method of (6), wherein the atmosphere beyond the air is the liquid of its medium transmission laser.
(11) according to the laser corrosion method of (10), wherein the liquid of transmission laser is water.
(12) according to the laser corrosion method of (10), wherein the liquid of transmission laser is silicone oil.
(13) according to the laser corrosion method of (1), wherein be used for preventing the device of operative minor product deposition around the corrosion position, be used to by means of laser irradiation, be heated under 200 ℃ or the above state and processing work at workpiece.
(14) according to the laser corrosion method of (1), wherein be used for preventing the device of operative minor product deposition around the corrosion position, be used to by means of laser irradiation, be provided under the state in the atmosphere that is no more than 10 torrs and processing work at workpiece.
(15) according to the laser corrosion method of (1), inorganic material wherein is the covalent bond crystal.
(16) according to the laser corrosion method of (1), inorganic material wherein is crystal or amorphous silicon.
(17) according to the laser corrosion method of (1), inorganic material wherein is a silicon compound.
(18) according to the laser corrosion method of (1), laser oscillator wherein has the space compression device that is used for the light propagation.
(19) according to the laser corrosion method of (18), wherein be used for the space compression device that light is propagated, comprise chirped pulse generating means and the vertical mode synchronizer that utilizes the optical wavelength disperse characteristic.
(20) a kind of laser oscillator that is equipped with the light pulse of macro-energy density on the room and time that pulse radiation time successively is no more than 1 psec, and be used to by means of with laser from laser oscillator with predetermined pattern and predetermined energy density, irradiation workpiece and the workpiece that inorganic material is formed is carried out the ablate laser corrosion device of processing of optics, this device comprises:
Be used for preventing that the irradiation that the workpiece that inorganic material is formed is carried out from depositing the device of operative minor product around the corrosion position of laser corrosion.
(21) the laser corrosion device of basis (20), wherein be used for preventing the device of operative minor product deposition around the corrosion position, be to comprise by means of controlling with ON/OFF being used for obtaining being longer than the intermitant irradiation of the frequency of oscillation of pulse laser at interval from the laser of laser oscillator, thus the device of the mechanical shutter of processing work.
(22) the laser corrosion device of basis (20), wherein be used for preventing the device of operative minor product deposition around the corrosion position, comprise and be used in the Working position of the workpiece that inorganic material is formed, causing air-flow, and be used to laser irradiation, in the Working position of the work materials that inorganic material is formed, cause under the state of air-flow and the device of processing work.
(23) according to the laser corrosion device of (22), wherein be used in the Working position of workpiece, causing the device of air-flow, be used to cause air stream.
(24) according to the laser corrosion device of (22), wherein be used in the Working position of workpiece, causing the device of air-flow, be used to cause nitrogen current.
(25) the laser corrosion device of basis (20), wherein be used for preventing the device of operative minor product deposition around the corrosion position, be to be used for the device of processing work, comprise operating room and the translucent element that can close the operating room, and by means of workpiece being placed medium that is full of beyond the air and the operating room that closes with translucent element, by translucent element, be used to process the workpiece that inorganic material is formed with the laser irradiation workpiece again.
(26) according to the laser corrosion device of (25), wherein be full of the air medium in addition of operating room, be the gas of atomic weight less than nitrogen molecular.
(27) according to the laser corrosion device of (26), gas wherein is helium.
(28) according to the laser corrosion device of (26), gas wherein is hydrogen.
(29) according to the laser corrosion device of (25), wherein be full of the medium beyond the air of operating room, be can transmission laser liquid.
(30) according to the laser corrosion device of (29), wherein the liquid of transmission laser is water.
(31) according to the laser corrosion device of (29), wherein the liquid of transmission laser is silicone oil.
(32) the laser corrosion device of basis (20), wherein be used for preventing the device of operative minor product deposition around the corrosion position, comprise being controlled at predetermined temperature by temperature adjustment device and being used for remaining on predetermined temperature and the heater of processing work with the laser irradiation workpiece by means of the workpiece that inorganic material is formed.
(33) the laser corrosion device of basis (20), wherein be used for preventing the device of operative minor product deposition around the corrosion position, comprise operating room and the translucent element that can close the operating room, and, workpiece is evacuated to the operating room pressure that is no more than 10 torrs and that close with translucent element by means of being placed, pass through translucent element again, use the laser irradiation workpiece, and be used to process the workpiece that inorganic material is formed.
(34) according to the laser corrosion device of (20), laser oscillator wherein has the space compression device that is used for the light propagation.
(35) according to the laser corrosion device of (34), wherein be used for the space compression device that light is propagated, comprise chirped pulse generating means and the vertical mode synchronizer that utilizes the optical wavelength disperse characteristic.
Fig. 1 shows the laser corrosion method in the embodiment of the invention 1;
Fig. 2 shows the order of the laser irradiating method in the embodiment of the invention 1;
The operating state that Fig. 3 shows the conventional laser caustic solution as a comparison;
Fig. 4 shows the operating state of the laser corrosion method of the embodiment of the invention 1;
Fig. 5 shows the laser corrosion method in the embodiment of the invention 2;
Fig. 6 shows the laser corrosion method in the embodiment of the invention 3;
Fig. 7 shows the laser corrosion method in the embodiment of the invention 4; And
Fig. 8 shows the laser corrosion method in the embodiment of the invention 5.
In embodiment, the invention enables and to carry out the laser corrosion to the workpiece of inorganic material composition and can around the corrosion position, not produce deposit based on said structure.
In first embodiment, promptly be longer than pulse laser frequency of oscillation intermitant irradiation at interval with having the irradiation intermittent time, carry out the irradiation of workpiece, also can carry out retrofit the material of micromechanics, IC or diode component thereby avoid corroding position deposition on every side.
The atom or the molecule particle that ablate to discharge produce plasma cloud around the corrosion position, and if carry out processing continuously, then this plasma cloud prevented from the to ablate atom that causes or emission of molecule particle.So the material of distillation liquefies or solidifies, thereby form corrosion position deposit on every side near Working position.
On the other hand, have in the structure of the frequency of oscillation intermitant irradiation workpiece at interval of being longer than pulse laser in above-mentioned utilization, after corrosion scheduled time length, provide the corrosion intermittent time, after the plasma cloud that causes atom or molecule particle to constitute is scattered, restart corrosion.This just makes and might stop corrosion position deposition on every side, thereby is avoided solid deposits to produce around the corrosion position.
Equally, in a second embodiment, in the Working position of workpiece, cause and carry out processing under the state of air-flow, thereby prevent to corrode deposition around the position, and can carry out retrofit the material of micromechanics, IC or diode component.The above-mentioned atom or the molecule particle that ablate to discharge since with remove from the airflow collision of Working position and by air-flow, and near Working position, keep less, thereby prevent that the solid deposited thing from producing around the corrosion position.
Equally, in the 3rd embodiment, carry out laser processing under the state in the atmosphere outside workpiece is placed in air, thereby prevent to corrode position deposition on every side, and can carry out retrofit the material of micromechanics, IC or diode component.
1) in case adopts helium to replace air to form under the situation of atmosphere, the atom or the molecule particle of ablating and discharging, even with the little helium atom case of collision of atomic weight under, following into, direction also manifests very little change, thereby tend to rectilinear motion, around the corrosion position, produce so prevented the solid deposited thing.
2) adopting hydrogen to replace air to form under the situation of atmosphere, except above-mentioned and atomic weight related effect,, under the situation that workpiece is made up of silicon, can access special advantage though the danger in disposing has increased.The silicon atom that ablate to discharge with the hydrogen atom chemical bond, converts the stable of gaseous state to and is difficult to be deposited on silane gas (SiH around the corrosion position
4), thereby prevented that the solid deposited thing from producing around the corrosion position.
3) adopting water to replace air to form under the situation of atmosphere, the atom or the deposition of molecule particle around the corrosion position of ablation release have been prevented owing to the existence of hydrone, and be attracted in these hydrones, so prevented deposition, thereby prevented from around the corrosion position, to produce the solid deposited thing.Yet in the case, the optical absorptivity of requirement workpiece does not produce gaseous byproduct (if because gaseous byproduct produces greater than the optical absorptivity and the ablation of water, be left bubble because the surface tension of water is big at Working position, thereby because refraction hinders passing through of light and that high-precision processing is become is impossible).
4) adopting silicone oil to replace air to form under the situation of atmosphere, the atom or the deposition of molecule particle around the corrosion position of ablation release have been prevented owing to the existence of silicone oil molecule, and be attracted in these silicone oil molecules, so prevented redeposited, thereby prevent to produce the solid deposited thing around the position in corrosion.Yet in the case, require the optical absorptivity of workpiece greater than the optical absorptivity of silicone oil (if gaseous byproduct produces by ablating, do not keep adhering to workpiece because the silicone oil surface tension is little, and if silicone oil is kept low-level based on the viscosity of its molecular weight, then can be removed from workpiece, thereby can tolerate) by flowing of causing of fluid pressure.
So, as front 1) and to 4) as described in, by means of the atmosphere that forms outside the various air, just might prevent to corrode position solid deposited thing on every side.
Equally, in the 4th embodiment, under workpiece is heated to 200 ℃ or above state, carry out processing, thereby prevent to corrode the deposition around the position, and can carry out retrofit the material of micromechanics, IC or diode component.The above-mentioned atom or the molecule particle of ablating and discharging, require the longer time to cool off and liquefied by heat from heated inorganic material, and in flight course, liquefied or solidified from the cooling of the air in the position of leaving the inorganic material that constitutes workpiece, thereby stoped near the solid deposited the corrosion position, thereby prevented the generation of solid deposited thing around the corrosion position.
Equally, in the 5th embodiment, remain at workpiece and to carry out processing in the atmosphere of the pressure that is no more than 10 torrs under the state, thereby prevent to corrode deposition around the position, and can carry out retrofit the material of micromechanics, IC or diode component.The above-mentioned atom or the molecule particle of ablating and discharging, in low-voltage space, fly with small number of molecules or atom, and show collision probability between the lower particle and longer average flight length, thereby tend to rectilinear motion, and keep around the position in corrosion less, thereby prevent the generation of solid deposited thing around the corrosion position.
Come sets forth in detail the present invention with most preferred embodiment of the present invention below.
[embodiment 1]
At first summarize the processing method of the embodiment of the invention 1 with reference to Fig. 1.Unshowned laser oscillator emitted laser 1 from laser that can emitter short pulse launch time (being no more than 1 psec), after the laser pulse string 5-1 that is modulated into by mechanical shutter 4-1 by the time cutting, irradiates light mask 6, see through the light of mask graph 8, be projected and focus on by projecting lens 7.The image of projection is focused on the surface of the workpiece of being made up of inorganic material 2.
Laser 1 with the impulse form of this state by irradiation, so that influence the sublimating ablation processing of workpiece 2, and in the present embodiment, by means of the ON/OFF control of mechanical shutter 4-1, and control laser irradiation, so that corrode workpiece 2 by order intermittently.
In the processing method of present embodiment, utilize wavelength to be about the laser of 150 femtoseconds for 1kHz, laser irradiation pulse duration for 775nm, laser pulse frequency of oscillation, carry out intermittently laser irradiation corrosion, the luminous power that about every pulse is 7 little joules, by photomask 6 and projecting lens 7, concentrate in the zone of 20 micron diameters, that is be every pulse 15 terawatt (TW)s/cm in energy density
2Laser irradiation conditions under, on the airborne silicon crystal of normal temperature and normal pressure, wherein by ON state 0.1 second (about 100 laser pulses are launched by the laser pulse string: X) and OFF state 0.5 second (do not launch laser pulse: the cycle of Y) forming, repeated 5 times by mechanical shutter 4-1, thereby provide about altogether 500 laser pulses, be about 30 microns etch pit to form the degree of depth.
As shown in Figure 4, according to the processing of present embodiment, make it possible to the corrosion that obtains to clean and around the hole of processing deposit-free.
On the other hand, as shown in Figure 3, and ON state (state that do not cover) mechanical shutter 4-1 same as described above in laser irradiation conditions at silicon crystal is 0.5 second, with about 500 laser irradiation pulses altogether, in the air of normal temperature and normal pressure under the situation of continuous corrosion silicon crystal, the hole that is corroded shows and to be about 30 microns the degree of depth, but that the silicon of liquefaction is deposited as around in processed hole is solid-state.Only depend on the flushing of mobile water, can't remove this silicon that solidifies easily.
The continuous corrosion method that compares, the processing method of present embodiment can form very the machining hole of cleaning and deposit-free.
[embodiment 2]
Summarize the processing method of present embodiment referring now to Fig. 2.From the unshowned laser oscillator emitted laser 1 of laser that can emitter short pulse launch time (being no more than 1 psec), irradiates light mask 6, the light that sees through mask graph 8 is projected and focuses on by projecting lens 7.The image of projection is focused on the surface of the workpiece of being made up of inorganic material 2.
On the other hand, gas nozzle 4-2 launches nitrogen 5-2 along the arrow direction, thereby produces air-flow on the surface of workpiece 2.Laser 1 is with impulse form irradiation, to influence the sublimating ablation processing of workpiece 2.
In the processing method of present embodiment, utilize wavelength to be about the laser of 150 femtoseconds for 1kHz, laser irradiation pulse duration for 775nm, laser pulse frequency of oscillation, carry out continuous corrosion, the light energy that about every pulse is 7 little joules, concentrate in the zone of 20 micron diameters by photomask 6 and projecting lens 7, that is be every pulse 15 terawatt (TW)s/cm in energy density
2Laser irradiation conditions under, on the airborne silicon crystal of normal temperature and normal pressure, providing under 0.5 second the irradiation of about altogether 500 laser pulses and under the nitrogen of 1 meter of about per second is blown, forming the degree of depth and be about 30 microns etch pit.
As shown in Figure 4, the processing method of present embodiment, under the condition of purging with nitrogen gas silicon crystal, the corrosion that can obtain to clean, and processed hole around deposit-free.On the other hand, as shown in Figure 3, under the situation that silicon crystal is corroded in the air atmosphere that does not have to blow, the silicon that demonstrates liquefaction is deposited on around the processed hole with solid-state form.Only depend on the flushing of mobile water, can't remove this silicon that solidifies easily.The processing of comparing in air atmosphere, the processing method of present embodiment can form very the machining hole of cleaning and deposit-free.Simultaneously, depend on the energy of laser irradiation, the iptimum speed of air-flow can change according to the size and the process velocity of working (finishing) area.
[embodiment 3]
Summarize the processing method of present embodiment referring now to Fig. 6.From the unshowned laser oscillator emitted laser 1 of laser that can emitter short pulse launch time (being no more than 1 psec), irradiates light mask 6, the light that sees through mask graph 8 is projected and focuses on by projecting lens 7.The image of projection is focused on the surface of the workpiece of being made up of inorganic material 2.
In the processing method of present embodiment, workpiece 2 is made up of silicon metal, and the helium that operating room 3 is used as the normal pressure of workpiece atmosphere material 5-3 is full of.
In the processing method of present embodiment, utilize wavelength to be about the laser of 150 femtoseconds for 1kHz, laser irradiation pulse duration for 775nm, laser pulse frequency of oscillation, carry out continuous corrosion, the light energy that about every pulse is 7 little joules, by photomask 6 and projecting lens 7, concentrate in the zone of 20 micron diameters, that is be every pulse 15 terawatt (TW)s/cm in energy density
2Laser irradiation conditions under, on silicon crystal, providing under 0.5 second the irradiation of about altogether 500 laser pulses, form the degree of depth and be about 30 microns etch pit.
As shown in Figure 4, the processing method of present embodiment, in helium atmosphere processing silicon metal situation under, the corrosion that can obtain to clean, and processed hole around deposit-free.
On the other hand, as shown in Figure 3, under the situation that silicon metal is corroded in air atmosphere, the silicon that demonstrates liquefaction is deposited on around the processed hole with solid-state form.Only depend on the flushing of mobile water, can't remove this silicon that solidifies easily.By contrast, the processing method of present embodiment can form the very hole of cleaning.
And this processing is unrestricted, the hole that also can obtain very to clean under following situation:
Use silicon as workpiece 2, hydrogen is as workpiece atmosphere material 5-3; Or
Use silicon as workpiece 2, silicone oil is as workpiece atmosphere material 5-3; Or
Use GaAs workpiece 2, helium is as workpiece atmosphere material 5-3; Or
Use GaAs workpiece 2, water is as workpiece atmosphere material 5-3; Or
Use GaAs workpiece 2, silicone oil is as workpiece atmosphere material 5-3.
[embodiment 4]
Summarize the processing method of present embodiment referring now to Fig. 7.From the unshowned laser oscillator emitted laser 1 of laser that can emitter short pulse launch time (being no more than 1 psec), irradiates light mask 6, the light that sees through mask graph 8 is projected and focuses on by projecting lens 7.The image of projection is focused on the surface of the workpiece of being made up of inorganic material 2.
On the other hand, workpiece 2 is heated by heater 4-4, and measures temperature with thermometer 5-4.By means of heater 4-4 being carried out switch and keeps stationary temperature with unshowned temperature controller.
In this state, laser 1 is with impulse form irradiation, to influence the sublimating ablation processing of workpiece 2.
In the processing method of present embodiment, utilize wavelength to be about the laser of 150 femtoseconds for 1kHz, laser irradiation pulse duration for 775nm, laser pulse frequency of oscillation, carry out the CW Laser corrosion, the light energy that about every pulse is 7 little joules, by photomask 6 and projecting lens 7, concentrate in the zone of 20 micron diameters, that is be every pulse 15 terawatt (TW)s/cm in energy density
2Laser irradiation conditions under, under temperature keeps about 250 ℃ situation, on the silicon crystal that constitutes workpiece 2,, form the degree of depth and be about 30 microns etch pit to provide 0.5 second irradiation of about altogether 500 laser pulses.
As shown in Figure 4, use the processing method of the present embodiment of the silicon metal be heated to 250 ℃, the corrosion that can obtain to clean, and around processed hole deposit-free.
On the other hand, as shown in Figure 3, at silicon crystal under situation about being corroded under the normal temperature, the silicon of liquefaction with solid-state form be deposited on processed hole around.Only depend on the flushing of mobile water, can't remove this silicon that solidifies easily.So, than the processing under normal temperature, the processing method of present embodiment can form very the machining hole of cleaning and deposit-free.Along with the rising from normal temperature (23 ℃) of the temperature of silicon metal, deposit tends to reduce, but deposit is still arranged being lower than under 200 ℃ the temperature.
[embodiment 5]
Summarize the processing method of present embodiment referring now to Fig. 8.Unshowned laser oscillator emitted laser 1 from laser that can emitter short pulse launch time (being no more than 1 psec), after the laser pulse string 5-1 that is modulated into by mechanical shutter 4-1 by the time cutting, irradiates light mask 6, the light that sees through mask graph 8 is projected and focuses on by projecting lens 7.The image of projection is focused on the surface of the workpiece of being made up of inorganic material 2.
On the other hand, workpiece 2 is by operating room 3 and window 4-5 sealing that can printing opacity, and uses by the reduce pressure reduced pressure air 5-5 of 10 torrs of unshowned pump and be full of space around the workpiece 2.In this case, laser 1 is with impulse form irradiation, to influence the sublimating ablation processing of workpiece 2.
In the processing method of present embodiment, utilize wavelength to be about the laser of 150 femtoseconds for 1kHz, laser irradiation pulse duration for 775nm, laser pulse frequency of oscillation, carry out the CW Laser corrosion, the light energy that about every pulse is 7 little joules, concentrate in the zone of 20 micron diameters by photomask 6 and projecting lens 7, that is be every pulse 15 terawatt (TW)s/cm in energy density
2Laser irradiation conditions under, on silicon crystal,, in the air of 5 torr pressure, form the degree of depth and be about 30 microns etch pit providing in 0.5 second time of about altogether 500 laser pulses.
As shown in Figure 4, the processing of present embodiment, in the air of 5 torr pressure processing silicon metal situation under, the corrosion that can obtain to clean, and processed hole around deposit-free.
On the other hand, as shown in Figure 3, under the situation that silicon metal is corroded in the air of normal pressure, the silicon of liquefaction with solid-state form be deposited on processed hole around.Only depend on the flushing of mobile water, can't remove this silicon that solidifies easily.So, than the airborne processing in normal pressure, the processing method of present embodiment can form very the machining hole of cleaning and deposit-free.Along with the reduction from normal pressure (760 torr) of the pressure of the atmosphere around the silicon metal, deposit tends to reduce, but deposit is still being arranged surpassing under the pressure of about 10 torrs.
As mentioned above, the invention provides a kind of in the laser corrosion process of the workpiece that inorganic material is formed, can work and do not corroding laser corrosion method and the laser corrosion device that deposition takes place and can carry out retrofit around the position the material of micromechanics, IC or diode component.
Carry out in the structure of the present invention of irradiation of workpiece with the intermitant irradiation of the frequency of oscillation of being longer than at interval pulse laser therein, after predetermined corrosion, can provide the corrosion intermittent time to realize processing sequence, wherein after the plasma cloud that is made of atom or molecule particle is scattered, restart corrosion, thereby in the operation of conventional continuous corrosion like that, might form cleaning very processing and in the corrosion position deposit-free on every side.
Carry out in the structure of the present invention of processing under the situation of generation gas stream in the Working position of workpiece therein, the atom or the molecule particle of ablating and launching, because the collection of air-flow, discharged from Working position, and stay near the position in corrosion less, thereby might form cleaning very processing and around the corrosion position deposit-free.
Equally, in the present invention, by means of the atom of the emission that replaces air to form atmosphere with helium, can make ablating or molecule particle linear rows and then be not retained near the corrosion position, thus can reach processing and around the corrosion position deposit-free.
Equally, in the present invention, by means of replacing air to form atmosphere with hydrogen, particularly under the situation that workpiece is made of silicon, except above-mentioned effect, also might change the silicon atom that is in the gas stable state, thereby can reach processing and the corrosion position around deposit-free.
Equally, in the present invention, replace air to form atmosphere by means of water, the atom of the emission of ablating or molecule particle be attracted in water and prevented redeposited, thereby can reach processing and around the corrosion position deposit-free.
Equally, in the present invention, by means of replacing air to form atmosphere with silicone oil, the atom of the emission of ablating or molecule particle be attracted in silicone oil and prevented redeposited, thereby can reach processing and around the corrosion position deposit-free.
Equally, therein in the structure of the present invention that the irradiation of workpiece is performed under workpiece is heated to 200 ℃ or higher situation, atom or the molecule particle of launching of ablating need cool off and be liquefied by the heat from heated inorganic material the longer time, and in flight course, in the position of leaving the inorganic material that constitutes workpiece, liquefied from the cooling of air or solidified, thereby reduced the solid deposited around the corrosion position.
Equally, the processing of workpiece therein is placed in the structure of the present invention that is performed in the gaseous atmosphere of the pressure that is no more than 10 torrs at workpiece, the ablate atom of emission or molecule particle flies in the less low-voltage space of atom or molecule amounts of particles, and collision probability between the lower particle of performance, thereby increased the change of average flight path and less experience direct of travel, thereby this particle tend to straightaway and near the corrosion position, keep less, thereby reach cleaning very processing and around the corrosion position deposit-free.
And above-mentioned 5 embodiment can make up and produce near the deposition of machining area.
For example, the combination that can adopt first embodiment (intermittently laser irradiation), second embodiment (air-flow air blowing) and the 4th embodiment (workpiece heating) to constitute, or the 3rd combination of constituting of embodiment (gaseous atmosphere) and the 4th embodiment (workpiece heating), or the combination of first embodiment (intermittently laser irradiation) and the 5th embodiment (reduced atmosphere).
Claims (35)
1. one kind is used for the ablate laser corrosion method of processing of optics by means of being used for from what the laser of the laser oscillator of the light pulse of macro-energy density on room and time that transmitted pulse exposure time successively is no more than 1 psec came workpiece that the irradiation inorganic material forms:
Wherein, in the laser corrosion process of using the workpiece of forming by described inorganic material that carries out its irradiation from the laser that has predetermined pattern and have a described laser oscillator of predetermined energy density, utilized the device that prevents that the operative minor product from depositing around the corrosion position.
2. according to the laser corrosion method of claim 1, wherein be used for preventing the described device of operative minor product deposition around the corrosion position, in process, be used to carry out intermitant irradiation to described workpiece to have the interval of being longer than the pulse laser frequency of oscillation with the described workpiece of described laser irradiation.
3. according to the laser corrosion method of claim 1, wherein be used for preventing the described device of operative minor product deposition around the corrosion position, in process, be used in the Working position of described workpiece to produce the irradiation of carrying out described light under the state of gas stream with the described workpiece of described laser irradiation.
4. according to the laser corrosion method of claim 3, the gas stream in the Working position of wherein said workpiece is an air stream.
5. according to the laser corrosion method of claim 3, the gas stream in the Working position of wherein said workpiece is a nitrogen current.
6. according to the laser corrosion method of claim 1, wherein be used for preventing the described device of operative minor product deposition around the corrosion position, in process, be used to carry out under the state in the atmosphere beyond described workpiece is placed in air the irradiation of described laser with the described workpiece of described laser irradiation.
7. according to the laser corrosion method of claim 6, wherein the described atmosphere beyond the air is the gas of the atomic weight of its medium less than the atomic weight of nitrogen molecular.
8. according to the laser corrosion method of claim 7, wherein said gas is helium.
9. according to the laser corrosion method of claim 7, wherein said gas is hydrogen.
10. according to the laser corrosion method of claim 6, wherein the described atmosphere beyond the air is the liquid of its medium transmission laser.
11. according to the laser corrosion method of claim 10, the liquid of wherein said transmission laser is water.
12. according to the laser corrosion method of claim 10, the liquid of wherein said transmission laser is silicone oil.
13. laser corrosion method according to claim 1, wherein be used for preventing the described device of operative minor product deposition around the corrosion position, in process, be used under described workpiece is heated to 200 ℃ or above state, carry out the irradiation of described laser with the described workpiece of described laser irradiation.
14. laser corrosion method according to claim 1, wherein be used for preventing the described device of operative minor product deposition around the corrosion position, in process, be used under described workpiece is provided at state in the gaseous atmosphere that pressure is no more than 10 torrs, carry out the irradiation of described laser with the described workpiece of described laser irradiation.
15. according to the laser corrosion method of claim 1, described inorganic material wherein is the covalent bond crystal.
16. according to the laser corrosion method of claim 1, described inorganic material wherein is crystal or amorphous silicon.
17. according to the laser corrosion method of claim 1, described inorganic material wherein is a silicon compound.
18. according to the laser corrosion method of claim 1, described laser oscillator wherein has the space compression device that is used for the light propagation.
19. according to the laser corrosion method of claim 18, the described space compression device that wherein is used for the light propagation comprises chirped pulse generating means and the vertical mode synchronizer that utilizes the optical wavelength disperse characteristic.
20. laser oscillator that is equipped with the light pulse of macro-energy density on the room and time that transmitted pulse exposure time successively is no more than 1 psec, and be used to laser from described laser oscillator with predetermined pattern and predetermined energy density, by means of the described workpiece of irradiation the workpiece of being made up of inorganic material is carried out the laser corrosion device that optics is ablated and processed, this device comprises:
Be used for preventing that the laser corrosion of the described workpiece that the irradiation inorganic material is formed from depositing the device of operative minor product around the corrosion position.
21. laser corrosion device according to claim 20, wherein be used for preventing the described device of operative minor product deposition around the corrosion position, comprise by means of controlling with ON/OFF being used for obtaining being longer than the intermitant irradiation of the frequency of oscillation of pulse laser at interval, thereby process the mechanical shutter of described workpiece from the laser of described laser oscillator.
22. laser corrosion device according to claim 20, wherein be used for preventing the described device of operative minor product deposition around the corrosion position, comprise the device that is used in the Working position of the described workpiece that described inorganic material is formed, causing air-flow, and in the Working position of the described workpiece that inorganic material is formed, cause under the state of air-flow, be used to by means of described workpiece being processed with the described workpiece of described laser irradiation.
23. according to the laser corrosion device of claim 22, wherein be used in the Working position of described workpiece, causing the described device of air-flow, be used to cause air stream.
24. according to the laser corrosion device of claim 22, wherein be used in the Working position of described workpiece, causing the described device of air-flow, be used to cause nitrogen current.
25. laser corrosion device according to claim 20, wherein be used for preventing the described device of operative minor product deposition around the corrosion position, comprise operating room and the translucent element that can close described operating room, and by means of described workpiece being placed medium that is full of beyond the air and the described operating room that closes with described translucent element, again by described translucent element, with the described workpiece of described laser irradiation, and be used to process the described workpiece that inorganic material is formed.
26., wherein be full of the air described medium in addition of described operating room, be the gas of atomic weight less than the nitrogen molecular atomic weight according to the laser corrosion device of claim 25.
27. according to the laser corrosion device of claim 26, described gas wherein is helium.
28. according to the laser corrosion device of claim 26, described gas wherein is hydrogen.
29., wherein be full of the air described medium in addition of described operating room, be the liquid that described laser can see through according to the laser corrosion device of claim 25.
30. according to the laser corrosion device of claim 29, the described liquid that wherein said laser sees through is water.
31. according to the laser corrosion device of claim 29, the described liquid that wherein said laser sees through is silicone oil.
32. laser corrosion device according to claim 20, wherein be used for preventing the described device of operative minor product deposition around the corrosion position, comprise the heater that is controlled at predetermined temperature by temperature adjustment device, and remain on predetermined temperature and with the described workpiece of described laser irradiation by means of the described workpiece that inorganic material is formed, and be used to process described workpiece.
33. laser corrosion device according to claim 20, wherein be used for preventing the described device of operative minor product deposition around the corrosion position, comprise operating room and the translucent element that can close described operating room, and, described workpiece is evacuated to the described operating room that is no more than 10 torr pressure and is closed by described translucent element by means of being placed, again by described translucent element, with the described workpiece of described laser irradiation, and be used to process the described workpiece that inorganic material is formed.
34. according to the laser corrosion device of claim 20, wherein said laser oscillator has the space compression device that is used for the light propagation.
35. according to the laser corrosion device of claim 34, wherein be used for the space compression device that light is propagated, comprise chirped pulse generating means and the vertical mode synchronizer that utilizes the optical wavelength disperse characteristic.
Applications Claiming Priority (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP39559199 | 1999-11-30 | ||
| JP39560199 | 1999-11-30 | ||
| JP339557/1999 | 1999-11-30 | ||
| JP339559/1999 | 1999-11-30 | ||
| JP39558199 | 1999-11-30 | ||
| JP339558/1999 | 1999-11-30 | ||
| JP33955699 | 1999-11-30 | ||
| JP339560/1999 | 1999-11-30 | ||
| JP39557199 | 1999-11-30 | ||
| JP339556/1999 | 1999-11-30 |
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| CN1297799A true CN1297799A (en) | 2001-06-06 |
| CN1191909C CN1191909C (en) | 2005-03-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 00134285 Expired - Fee Related CN1191909C (en) | 1999-11-30 | 2000-11-30 | Laser corrosion method and its apparatus |
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| CN (1) | CN1191909C (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102687072A (en) * | 2009-12-18 | 2012-09-19 | 伯格利-格拉维瑞斯股份有限公司 | Method and device for producing masks for a laser installation for the production of microstructures |
| CN103889642A (en) * | 2011-09-23 | 2014-06-25 | 伯格利-格拉维瑞斯股份有限公司 | Method and device for producing a structured surface on a steel embossing roller |
| CN103952767A (en) * | 2014-05-14 | 2014-07-30 | 浙江嘉泰激光科技有限公司 | Method for precisely processing sapphire through double-laser beam sequence scanning |
| CN105952603A (en) * | 2016-04-28 | 2016-09-21 | 中国人民解放军国防科学技术大学 | Laser ablation pulsed plasma thruster |
| CN109551123A (en) * | 2018-12-17 | 2019-04-02 | 华东师范大学 | The method that picosecond laser induces inside quartz glass crackle to realize micro-fluidic device preparation |
| CN113458609A (en) * | 2021-05-27 | 2021-10-01 | 上海传芯半导体有限公司 | Processing method for regenerating mask light-transmitting substrate and manufacturing method for mask substrate |
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2000
- 2000-11-30 CN CN 00134285 patent/CN1191909C/en not_active Expired - Fee Related
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102687072A (en) * | 2009-12-18 | 2012-09-19 | 伯格利-格拉维瑞斯股份有限公司 | Method and device for producing masks for a laser installation for the production of microstructures |
| CN102687072B (en) * | 2009-12-18 | 2015-05-20 | 伯格利-格拉维瑞斯股份有限公司 | Method and device for producing masks for a laser installation for the production of microstructures |
| CN103889642A (en) * | 2011-09-23 | 2014-06-25 | 伯格利-格拉维瑞斯股份有限公司 | Method and device for producing a structured surface on a steel embossing roller |
| CN103889642B (en) * | 2011-09-23 | 2016-04-13 | 伯格利-格拉维瑞斯股份有限公司 | Knurling steel roll produces the method and apparatus with the surface of structure |
| US10183318B2 (en) | 2011-09-23 | 2019-01-22 | Boegli-Gravures S.A. | Method and device for producing a structured surface on a steel embossing roller |
| CN103952767A (en) * | 2014-05-14 | 2014-07-30 | 浙江嘉泰激光科技有限公司 | Method for precisely processing sapphire through double-laser beam sequence scanning |
| CN103952767B (en) * | 2014-05-14 | 2016-03-30 | 浙江嘉泰激光科技有限公司 | A kind of sapphire method of double laser beam sequence scanning precision sizing |
| CN105952603A (en) * | 2016-04-28 | 2016-09-21 | 中国人民解放军国防科学技术大学 | Laser ablation pulsed plasma thruster |
| CN105952603B (en) * | 2016-04-28 | 2018-07-24 | 中国人民解放军国防科学技术大学 | Laser ablation pulses plasma thruster |
| CN109551123A (en) * | 2018-12-17 | 2019-04-02 | 华东师范大学 | The method that picosecond laser induces inside quartz glass crackle to realize micro-fluidic device preparation |
| CN109551123B (en) * | 2018-12-17 | 2021-08-24 | 华东师范大学 | Method for realizing preparation of microfluidic device by inducing cracks in quartz glass through picosecond laser |
| CN113458609A (en) * | 2021-05-27 | 2021-10-01 | 上海传芯半导体有限公司 | Processing method for regenerating mask light-transmitting substrate and manufacturing method for mask substrate |
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