CN1296725C - Geminate transistors type PMOS radiation dose meter with difference output - Google Patents
Geminate transistors type PMOS radiation dose meter with difference output Download PDFInfo
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- CN1296725C CN1296725C CNB2004100948621A CN200410094862A CN1296725C CN 1296725 C CN1296725 C CN 1296725C CN B2004100948621 A CNB2004100948621 A CN B2004100948621A CN 200410094862 A CN200410094862 A CN 200410094862A CN 1296725 C CN1296725 C CN 1296725C
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Abstract
The present invention relates to a geminate transistor type PMOS radiation dose meter with difference output, which comprises a probe of the geminate transistors type PMOS radiation dose meter with difference output, a measuring offset method, dose recording and reading technology, a temperature compensation method, an annealing effect correction method, a radiation dose meter, the measuring and reading technology of the radiation dose meter, temperature compensation technology used by the radiation dose meter, and an annealing effect correction technology responding to pMOSFET radiation, wherein the probe of the geminate transistors type PMOS radiation dose meter with difference output is composed of a metal oxide semiconductor transistor pMOSFET with a double p-channel; the radiation dose meter is formed by the probe.
Description
Technical field
The present invention is a kind of ionizing radiation dose measuring technique, relates to semiconductor physics, solid radiation physics, radiation dosimetry and electronic technology field.
Background technology
The notion of PMOS quantimeter at first is (" the The space-charge dosimeter-general principles of a new radiationdetection " that the Holmes-Siedle by Britain puts forward, Nucl.Instr.Meth.Vol.121, P169-174 (1974) .).P channel metal-oxide-semiconductor transistor (pMOSFET:P channelMetal-Oxide-Semiconductor Transistor) is when being subjected to ionising radiation, because the generation of oxide layer positive charge and interface state, the starting voltage of device can be drifted about with radiation dose, PMOSFET for the special process manufacturing, the suffered radiation dose of the amplitude of threshold voltage shift and device presents the monotonic relationshi of approximately linear, therefore can come the radiation dose of characterizing device absorption with the amplitude of its threshold voltage shift.The principle of Here it is PMOS quantimeter.Volume is little, in light weight because the PMOS quantimeter has, and measurement and sensing circuit are simple, are convenient to the characteristics of remote-control romote-sensing, have at first obtained application in the space radiation environment field of detecting.The PMOS quantimeter has become the measuring equipment that generally adopts in the monitoring of the inside and outside radiation environment ionising radiation of aerospacecraft accumulated dose abroad at present, and has also obtained increasing application at the civil areas such as radiation dose measurement of medical science, nuclear industry, radiation protection and high-energy physics testing equipment.
But because PMOSFET is a kind of semiconductor devices, the characteristics of himself have determined the measurement result of PMOS quantimeter very easily to be subjected to Effect of Environmental.The main cause that influences PMOS quantimeter measurement result accuracy has two: the one, and temperature effect, promptly temperature variation causes the variation of device starting voltage; The 2nd, the migration of radiation induced charge in oxide layer, transport, process such as compound causes device threshold voltage shift value to take place to recover after accepting radiation dose or continue to change, promptly so-called " annealing effect ", annealing effect cause losing of radiation dose record.For temperature effect is compensated, " zero temperature coefficient point " method has been carried." zero temperature coefficient point " has tangible compensating action to the temperature effect of PMOS quantimeter, and still, " zero temperature coefficient point " can change after PMOSFET was subjected to radiation, and compensation effect is descended; Simultaneously, " zero temperature coefficient point " method can not compensate " annealing effect ".Therefore, be necessary the technique for temperature compensation of PMOS quantimeter is improved, and seek the method that its " annealing effect " revised.
Summary of the invention
The objective of the invention is to, improve the technique for temperature compensation of PMOS quantimeter, solve crucial application technology difficult points such as its temperature stability and annealing effect.What develop is further to improve on the basis of Chinese patent CN98125702X to tubular type difference output PMOS radiation estimator.This quantimeter comprises tubular type difference output PMOS quantimeter probe, measures biasing means, dosage record sensing technique, temperature compensation and annealing effect modification method; The PMOS dosage measurement probe that utilizes two p-channel metal-oxides-semiconductor transistor pMOSFET to constitute to the output of tubular type difference; The radiation estimator that utilizes this probe to constitute; The measuring technique of this quantimeter, sensing technique; And the technique for temperature compensation that this quantimeter adopted and to the correction technique of pMOSFET radiometric response annealing effect.
Of the present invention to tubular type difference output PMOS radiation estimator, this quantimeter comprises tubular type difference output PMOS quantimeter probe, measures biasing means, dosage record sensing technique, temperature compensation and annealing effect modification method; This quantimeter is made up of probe, mode of operation selector switch SW-1G, SW-2G, SW-1S, SW-2S, direct voltage source Vb1, Vb2 and constant current source Ic1, Ic2; Probe be have that the identical pMOSFET coupling of two structures and characterisitic parameter constitutes to tubular structure; The difference of the threshold voltage that produces after radiation with two pMOSFET is as the physical parameter that characterizes this radiation dose.
Probe is made up of two identical p slot field-effect transistor T1, T2; The formation of probe adopts dual mode to realize: select the monolithic device that includes two identical pMOSFET for use; Or 2 PMOS single tubes are installed on the very little pcb board of area as close as possible, with each electrodes of two pipes respectively with drawing.
Measuring method to tubular type difference output PMOS radiation estimator is, the drain electrode of two pMOSFET of pipe and source electrode are added respectively in addition identical voltage forming quantimeter, the source S 1, the S2 that are transistor T 1, T2 are connected to " zero " current potential simultaneously, and drain D 1, D2 are connected to the arbitrary current potential between the 0-15 volt simultaneously; And at the in addition different respectively voltage of the grid of two pMOSFET, promptly grid G 1, G2 are connected to different bias voltage Vb1, Vb2 respectively, place radiation field then.
Dosage record sensing technique to tubular type difference output PMOS radiation estimator is, injects the identical steady current of size simultaneously to the drain electrode through two pMOSFET pipes of overshoot, measures the differential voltage value between its grid.The grid G 1, G2 and drain D 1, the D2 that are T1, T2 are connected to " zero " current potential simultaneously, and source S 1, the S2 by T1, T2 injects identical steady current respectively; Differential voltage between S1, the S2 leads to Acquisition Circuit as the quantimeter output voltage.
Temperature compensation to tubular type difference output PMOS radiation estimator is, utilization has the uniform temp characteristic to two PMOSFET of pipe because of identical structure and characterisitic parameter, employing adds respectively in addition identical voltage to the drain electrode of two pMOSFET of pipe and source electrode forming quantimeter, and at the in addition different respectively voltage of the grid of two pMOSFET, the measuring method that places radiation field then with inject the identical steady current of size simultaneously to drain electrode through two pMOSFET pipes of overshoot, measure the reading method of the differential voltage value between its grid, its temperature effect is cancelled out each other and realize the technical method of temperature compensation.
Annealing effect modification method to tubular type difference output PMOS radiation estimator is, utilization has close annealing characteristic to two PMOSFET of pipe because of identical structure and characterisitic parameter, employing adds respectively in addition identical voltage to the drain electrode of two pMOSFET of pipe and source electrode forming quantimeter, and at the in addition different respectively voltage of the grid of two pMOSFET, the measuring method that places radiation field then with inject the identical steady current of size simultaneously to drain electrode through two pMOSFET pipes of overshoot, measure the reading method of the differential voltage value between its grid, its annealing is cancelled out each other and reduce the technical method that dose measurement is lost.
The present invention is mainly based on following 2 principles:
1, added gate bias voltage has dependence closely when the threshold voltage shift that produces after the pMOSFET radiation and its radiation.
2, the identical pMOSFET of structure and technological parameter has essentially identical characteristic, comprises the annealing characteristic after temperature characterisitic and the radiation.
Write down sensing technique, temperature compensation and annealing effect modification method to tubular type difference output PMOS quantimeter probe, measurement biasing means, dosage of the present invention tubular type difference output PMOS radiation estimator is comprised.Tubular type difference output PMOS radiation estimator is made of two structures and the identical pMOSFET of technological parameter.The drain electrode of two pMOSFET links to each other and constitutes the differential pair structure.This quantimeter has dosage measurement and dosage is read two kinds of mode of operations.When being in measurement pattern two pMOSFET in addition different grid source bias voltages accept irradiation.Because the gate voltage difference, two pMOSFET accept can produce behind the identical radiation dose the threshold voltage shift amplitude also inequality.Source electrode by two pMOSFET when being in readout mode injects identical steady current, the value of electric current is corresponding to predefined threshold voltage, measure the differential voltage value between two pMOSFET grids, utilize the differential voltage of demarcation in advance and the corresponding relation curve of radiation dose, obtain being worth mutually with its corresponding radiation dose.
Because two pMOSFET have identical structure and technological parameter, its temperature characterisitic is also basic identical, and the annealing effect after the radiation is also very close.Because it is the difference of two pMOSFET starting voltages that quantimeter is used for characterizing the physical parameter of radiation dose, so the threshold voltage shift that temperature causes becomes common-mode signal and cancels out each other. can obtain very good effect temperature compensation after cancelling out each other, reach the purpose of temperature compensation.Annealing effect has also obtained correction owing to cancelling out each other simultaneously, makes the radiation dose record obtain more stable maintenance.
Description of drawings
Referring to accompanying drawing
Fig. 1 is to tubular type difference output PMOS quantimeter principle of work synoptic diagram.
Fig. 2 is to tubular type difference output PMOS quantimeter sonde configuration and measurement pattern synoptic diagram.
Fig. 3 is to tubular type difference output PMOS quantimeter readout mode synoptic diagram.
Embodiment
Embodiment
The quantimeter constituted mode
Can form by probe, mode of operation selector switch (SW-1G, SW-2G, SW-1S, SW-2S), direct voltage source (Vb1, Vb2) and constant current source (Ic1, Ic2) tubular type difference output PMOS quantimeter; Probe is made up of two identical p slot field-effect transistor T1, T2; The formation of probe can realize in two ways that (1) selects the monolithic device that includes two identical pMOSFET for use, and (2) are installed on 2 PMOS single tubes on the very little pcb board of area as close as possible, with each electrodes of two pipes respectively with drawing.
The working method of quantimeter
In respect of two kinds of mode of operations, a kind of is the measurement pattern that receives and write down radiation dose to tubular type difference output PMOS dosage; A kind of is the readout mode that the radiation dose record is converted to voltage signal output.
Under measurement pattern, the source electrode of T1, T2 (S1, S2), drain electrode (D1, D2) are connected to " zero " current potential respectively; Grid (G1, G2) is connected to different bias voltage Vb1, Vb2 respectively.
Under readout mode, the grid of T1, T2 (G1, G2) and drain electrode (D1, D2) are connected to " zero " current potential simultaneously, and the source electrode (S1, S2) by T1, T2 injects identical steady current respectively; Differential voltage between S1, the S2 leads to Acquisition Circuit as the quantimeter output voltage.
Two drain D 1, the direct ground connection of D2 of probe; Two grids switch connection by selector switch SW-1G and SW-2G respectively between bias voltage source Vb1, Vb2 or " zero " current potential.Source S 1, S2 by select selector switch SW-1S and SW-2S constant current source and " " between switch.The two ends of the voltage table that output voltage is measured are connected to the output terminal of constant current source Ic1, Ic2 respectively.
Control end Contrl control selector switch SW-1G, SW-2G, SW-1S and SW-2S decide probe to be in measurement pattern or to be in readout mode.
The course of work of quantimeter
Determine the irradiation bias voltage of probe
In advance constitute two transistor Ts 1 of quantimeter and T2 irradiation bias voltage Vb1, the Vb2 when the dosage measurement pattern by test and Selection; Selecting the principle of Vb1 and Vb2 is that the threshold voltage shift amplitude that worker T1 and T2 are produced when being subjected to the same dose radiation has tangible difference, and the two has close annealing response after radiation stops simultaneously, to eliminate the influence of annealing effect.
Definite probe is read working current
In advance the subthreshold I-E characteristic that the p-MOSFET that is used to constitute probe is carried out under the different temperatures is tested, and obtains its " zero-temperature coefficient " electric current.With this electric current as working current Ic1, the Ic2 of probe under the readout mode.To eliminate the measuring error that temperature effect is brought.
The quantimeter measuring process
Probe is put into the radiation dose field, and external control signal places measurement pattern (Control=" 0 ") by selector switch with probe.Through after the radiation of certain hour, probe is placed readout mode (Control=" 1 "), measure its output voltage Δ Vs.
The demarcation of quantimeter
Must be before quantimeter uses through demarcating.Scaling method is for to place the radiation dose field of demarcating through other dosage measurement methods with probe, and according to probe being put into the radiation dose field, external control signal places measurement pattern (Control=" 0 ") by selector switch with probe.Through after the radiation of certain hour, probe is placed readout mode (Control=" 1 "), measure the method for its output voltage Δ Vs, measure the output voltage Δ Vs of quantimeter and the response relation curve of radiation dose D.
The application implementation method of quantimeter:
The measurement of a, unknown radiation field integrated radiation dose D in the interval Δ t of a certain radiated time: probe is placed the radiation field that will measure, the record radiation start time; When irradiation to schedule time Δ t according to probe being put into the radiation dose field, external control signal places measurement pattern (Control=" 0 ") by selector switch with probe; Through after the radiation of certain hour, probe is placed readout mode (Control=" 1 "), measure its output voltage Δ Vs method, measure the output voltage Δ Vs of quantifier; Dose response curve by prior demarcation obtains the integrated radiation dose D that probe is subjected in this time interval.
The measurement of b, unknown radiation field radiation dose rate d: probe is placed the radiation field that will measure, record radiation start time t1; According to probe being put into the radiation dose field, external control signal places measurement pattern (Control=" 0 ") by selector switch with probe.Through after the radiation of certain hour, probe is placed readout mode (Control=" 1 "), the method for measuring its output voltage Δ Vs is measured the output voltage Δ Vs of quantifier at a certain time interval; When the value of Δ Vs reaches the amplitude that satisfies the measuring accuracy requirement, write down Δ Vs value and time t2 simultaneously; Dose-response relationship curve by prior demarcation obtains corresponding integrated radiation dose; Utilize following formula can try to achieve the dose rate d of this radiation field:
Claims (6)
1, a kind of to tubular type difference output PMOS radiation estimator, it is characterized in that this quantimeter is selected from tubular type difference output PMOS quantimeter probe, measures that biasing, dosage record are read, temperature compensation and annealing effect correction; This quantimeter is made up of PMOS quantimeter probe, mode of operation selector switch SW-1G, SW-2G, SW-1S, SW-2S, direct voltage source Vb1, Vb2 and constant current source Ic1, Ic2; Probe be have that the identical pMOSFET coupling of two structures and characterisitic parameter constitutes to tubular structure; The difference of the threshold voltage shift that produces after radiation with two pMOSFET is as the physical parameter that characterizes this radiation dose.
2, according to claim 1 to tubular type difference output PMOS radiation estimator, it is characterized in that popping one's head in and form by two identical p slot field-effect transistor T1, T2; The formation of probe adopts dual mode to realize: select the monolithic device that includes two identical pMOSFET for use; Or 2 PMOS single tubes are installed on the pcb board, with each electrodes of two pipes respectively with drawing.
3, the measurement biasing means to tubular type difference output PMOS radiation estimator according to claim 1, it is characterized in that forming the quantimeter voltage in addition identical respectively to the drain electrode of two pMOSFET of pipe and source electrode, the source S 1, the S2 that are transistor T 1, T2 are connected to " zero " current potential simultaneously, and drain D 1, D2 are connected to the arbitrary current potential between the 0-15 volt simultaneously; And at the in addition different respectively voltage of the grid of two pMOSFET, promptly grid G 1, G2 are connected to different bias voltage Vb1, Vb2 respectively, place radiation field then.
4, the dosage record sensing technique to tubular type difference output PMOS radiation estimator according to claim 1, it is characterized in that measuring the differential voltage value between its grid to inject the identical steady current of size simultaneously through the drain electrode of two pMOSFET pipes of overshoot; The grid G 1, G2 and drain D 1, the D2 that are T1, T2 are connected to " zero " current potential simultaneously, and source S 1, the S2 by T1, T2 injects identical steady current respectively; Differential voltage between S1, the S2 leads to Acquisition Circuit as the quantimeter output voltage.
5, temperature compensation to tubular type difference output PMOS radiation estimator according to claim 1, it is characterized in that utilizing two PMOSFET of pipe are had the uniform temp characteristic because of identical structure and characterisitic parameter, the quantimeter voltage in addition identical respectively to the drain electrode of two pMOSFET of pipe and source electrode is being formed in employing, and at the in addition different respectively voltage of the grid of two pMOSFET, the measuring method that places radiation field then with inject the identical steady current of size simultaneously to drain electrode through two pMOSFET pipes of overshoot, measure reading of differential voltage value between its grid, its temperature effect is cancelled out each other and realize temperature compensation.
6, annealing effect modification method to tubular type difference output PMOS radiation estimator according to claim 1, it is characterized in that utilizing two PMOSFET of pipe are had close annealing characteristic because of identical structure and characterisitic parameter, the quantimeter voltage in addition identical respectively to the drain electrode of two pMOSFET of pipe and source electrode is being formed in employing, and at the in addition different respectively voltage of the grid of two pMOSFET, the measuring method that places radiation field then with inject the identical steady current of size simultaneously to drain electrode through two pMOSFET pipes of overshoot, measure reading of differential voltage value between its grid, its annealing is cancelled out each other and reduce dose measurement and lose.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2004100948621A CN1296725C (en) | 2004-11-17 | 2004-11-17 | Geminate transistors type PMOS radiation dose meter with difference output |
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| CNB2004100948621A CN1296725C (en) | 2004-11-17 | 2004-11-17 | Geminate transistors type PMOS radiation dose meter with difference output |
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| CN1296725C true CN1296725C (en) | 2007-01-24 |
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| CN101937091B (en) * | 2007-12-12 | 2012-07-25 | 中国科学院微电子研究所 | Stack measuring circuit capable of adjusting range |
| CN101458337B (en) * | 2007-12-12 | 2010-12-08 | 中国科学院微电子研究所 | Silicic double probe PMOS radiation dose meter based on insulator |
| CN103698796A (en) * | 2013-11-28 | 2014-04-02 | 兰州空间技术物理研究所 | Extravehicular radiation dose measurement device for spacecraft |
| CN104345328B (en) * | 2014-10-29 | 2017-09-15 | 中国科学院微电子研究所 | radiation detection circuit |
| CN108627865B (en) * | 2017-03-22 | 2019-10-11 | 中国科学院国家空间科学中心 | A method of the temperature effect of amendment space dosimeter sensor |
| CN106978630B (en) * | 2017-05-27 | 2019-04-23 | 中国科学院新疆理化技术研究所 | Selenium copper silicon barium and selenium copper silicon barium mid and far infrared nonlinear optical crystal and preparation method and purposes |
| CN110865112B (en) * | 2019-11-18 | 2021-04-02 | 浙江大学 | Transimpedance type reading circuit and method for field effect sensor |
| CN113484902A (en) * | 2021-07-24 | 2021-10-08 | 中国科学院新疆理化技术研究所 | PMOS dosimeter zero temperature coefficient measuring and inhibiting method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1256416A (en) * | 1998-12-07 | 2000-06-14 | 中国科学院新疆物理研究所 | Solid dosage instrument capable of measuring total ionizing radiation dosage |
| US6650151B2 (en) * | 2001-12-26 | 2003-11-18 | Xerox Corporation | Process insensitive electronic driver circuitry for integrated RF switching diodes |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1256416A (en) * | 1998-12-07 | 2000-06-14 | 中国科学院新疆物理研究所 | Solid dosage instrument capable of measuring total ionizing radiation dosage |
| US6650151B2 (en) * | 2001-12-26 | 2003-11-18 | Xerox Corporation | Process insensitive electronic driver circuitry for integrated RF switching diodes |
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