CN1294620C - Semiconductor device making apparatus - Google Patents
Semiconductor device making apparatus Download PDFInfo
- Publication number
- CN1294620C CN1294620C CNB031003702A CN03100370A CN1294620C CN 1294620 C CN1294620 C CN 1294620C CN B031003702 A CNB031003702 A CN B031003702A CN 03100370 A CN03100370 A CN 03100370A CN 1294620 C CN1294620 C CN 1294620C
- Authority
- CN
- China
- Prior art keywords
- reative cell
- carrier
- semiconductor device
- lower wall
- downside
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Computer Hardware Design (AREA)
- Analytical Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Chemical Vapour Deposition (AREA)
- Liquid Crystal (AREA)
Abstract
An apparatus for manufacturing a semiconductor device includes a chamber having an upper wall, a lower wall and a sidewall, the chamber including an exhaust hole passing through the lower wall, the sidewall between the upper and lower walls, a susceptor in the chamber to hold a substrate thereon, the susceptor parallel to the lower wall, a pumping plate between the susceptor and the lower wall, the pumping plate spacing apart from the sidewall and covering the exhaust hole, and a decompression system outside the chamber, the decompression connected to the exhaust hole.
Description
Technical field
The present invention relates to the manufacturing equipment of semiconductor device, particularly the structure of bleeding of the manufacturing equipment of semiconductor device.
Background technology
Because demand thin, in light weight and low-power Xiao Mao, flat display apparatus is used widely.In these flat display apparatus, a kind of liquid crystal indicator has been applied in the screen of mobile computer and desktop PC widely, because it has preferable resolution, coloured image demonstration and display image quality.
Generally speaking, this liquid crystal indicator (LCD, Liquid Crystal Display) has the levels substrate, is spaced and faces mutually.The electrode that is arranged on the substrate is faced mutually.One liquid crystal layer is inserted between top substrate layer and the following laminar substrate.A voltage is applied to this liquid crystal layer via the electrode on each substrate, and therefore, according to the voltage that applies, this liquid crystal molecule changes it and arranges with display image.
The following laminar substrate of this LCD device is commonly called a multiple substrate, and it comprises pixel electrode and the thin-film transistor that is aligned to matrix.The manufacturing of this multiple substrate is via deposition one film on a transparency carrier, and with the technology of this Thinfilm patternization.These technologies are finished under vacuum state in the equipment of this semiconductor device of manufacturing.This equipment comprises a process reaction chamber, and it is an airtight reaction vessel, an extract system, controls environment and a gas supply system in this reative cell, its storage and supply reacting gas.
Fig. 1 is the reative cell of a prior art, in order to make the semiconductor device.In this reative cell 10, via the chemical reaction of the gas that injects this reative cell 10, a thin film deposition is on a substrate 1, or the film on this substrate is patterned.This reative cell 10 comprises a gas access 22, an outlet 24.This gas access 22 is paths of reacting gas, and this reacting gas is fed to this reative cell 10 through gas access 22 thus.This outlet 24 is connected to a decompressor, and so pump P outside the reative cell 10, and the internal pressure of this solid/liquid/gas reactions chamber 10 controls through exporting 24 gases of extracting out in these reative cells 10 thus by this pump P.
In this reative cell 10, a carrier 30 is parallel to downside 12 arrangements of this reative cell 10, and this substrate 1 is placed on this carrier 30.This carrier 30 wherein has a heater (not shown) usually, quickens the chemical reaction of this reacting gas.
Also comprise a syringe 26 in this reative cell 10, and syringe 26 is connected to this gas access 22.This syringe 26 spreads the reacting gas of 22 supplies through gas access thus equably.
In the reative cell 10 among Fig. 1, this substrate 1 is placed on the carrier 30, and this reative cell 10 is sealed.Then, from then on the gas in this solid/liquid/gas reactions chamber 10 exported 24 by pump P and extract out, and this reative cell 10 is in vacuum state.This heater produces heat, so this substrate 1 is heated.This reacting gas is injected into this reative cell 10 through gas access 22 and syringe 26 thus, and the chemical reaction of reacting gas is carried out one technology of deposition or patterning one film by this.At this moment, what the reacting gas of a reaction residue and a part continued is extracted out reative cell 10 by this pump P, so this internal pressure is kept unanimity.This reative cell 10 has a discharge structure at downside 12, to discharge the reacting gas of a reaction residue and a part.
Fig. 2 is the general view of reative cell of the prior art of Fig. 1, and shows the discharge structure of this reative cell.In Fig. 2, the the 1st to the 5th aspirating hole 20a, 20b, 20c, 20d, 20e are arranged in the downside 12 of this reative cell 10, and this 1st to the 5th aspirating hole 20a, 20b, 20c, 20d, 20e are connected to and extract cavity 20 out, it is formed on the downside 12 of this reative cell 10, and surrounds a carrier stay pipe 30a.This carrier stay pipe 30a passes the downside 12 of this reative cell 10.The downside 12 of this reative cell 10 comprises a steam vent 21.This steam vent 21 is connected to this outlet 24 among this bleed cavity 20 and Fig. 1.
The size of this steam vent 21 is bigger than aspirating hole 20a, 20b, 20c, 20d, 20e, and holds quite a large amount of gas.Promptly right this outlet 24 is connected to this pump P, and the reacting gas of this reaction residue and this part is after aspirating hole 20a, 20b, 20c, 20d, 20e flow to the cavity 20 of bleeding thus, through this reative cell 10 is discharged in steam vent 21 and this outlet 24 thus.
Yet in reative cell 10, this gas enters the cavity 20 of bleeding via aspirating hole 20a, 20b, 20c, 20d, 20e, can only throw aside via steam vent 21, and this steam vent 21 is formed on one side of this downside 12.Therefore, around this steam vent 21 and the extraction pressure ratio other parts of this 3rd and the 4th aspirating hole 20c and 20d low, and this gas concentrates on the zone of close this steam vent 21.Therefore, the implementation of this depositing of thin film or patterning is inhomogeneous, and the quality of a finishing device has been fallen at the end.In addition, the reliability of this technology descends.
Summary of the invention
Therefore, the present invention is the manufacturing equipment that is applied in a kind of semiconductor device, eliminates the restriction and the shortcoming of one or more prior aries in fact.
An advantage of the present invention is to provide a kind of manufacturing equipment of semiconductor device, makes that this extraction pressure is even, and improves the quality of this device.
The feature and advantage that the present invention adds below are described, will have part in from then on describing is significantly, or learns from enforcement of the present invention.Purpose of the present invention and other advantage structure thus realize and obtain, this structure can the description of literal and claim, and accompanying drawing in indicate.
For realizing purpose of the present invention, these advantages and other advantage as embodiment and general description, a kind of manufacturing equipment of semiconductor device comprises: a reative cell, this reative cell has a upper wall, a lower wall and a sidewall, this reative cell comprises the steam vent through this lower wall, and this sidewall is between between this upper wall and lower wall; Carrier in this reative cell is held a substrate thereon, and this carrier is parallel to this lower wall; One evacuating plate, between between this carrier and this lower wall, this extraction plate and this sidewall leave at interval and this evacuating plate covers this steam vent; With a depressurized system, outside this reative cell, this depressurized system is connected to this steam vent, wherein this evacuating plate have the shape identical with this downside and and this downside between leave at interval, and the size of this evacuating plate is greater than this carrier but less than this downside.
Above general description and the following detailed description be in order to for example and explanation, and further specifying of claim of the present invention is provided.
Description of drawings
Fig. 1 is a reative cell in order to the prior art of making semiconductor device.
Fig. 2 is the general view of the reative cell of prior art among Fig. 1.
Fig. 3 is according to one embodiment of the invention, shows one in order to make the reative cell of semiconductor device.
Fig. 4 is the general view of this reative cell among Fig. 3.
" figure number explanation "
1,100 substrates, 10,110 reative cells
12,112 downsides 20 cavity of bleeding
20a, 20b, 20c, 20d, 20e aspirating hole
21,121 steam vents, 22,122 gas accesses
24,124 outlets, 26,126 syringes
30,130 carrier 30a, 130a carrier stay pipe
110a conversion zone 114 sidewalls
120a regional 150 evacuating plates of bleeding
Embodiment
At length mention explanation embodiment of the present invention now, this example will illustrate in the accompanying drawings.In any possibility part, in all icons, use identical reference number, to censure this same or analogous part.
Fig. 3 shows a reative cell according to an embodiment of the invention, in order to make the semiconductor device.In this reative cell 110, by the chemical reaction of the gas that injects this reative cell 110, a thin film deposition is on a substrate 100, or the film on this substrate 100 is patterned.This reative cell 110 comprises a gas access 122 and an outlet 124.This gas access 122 is paths of reacting gas, and this reacting gas is fed to this reative cell 110 through gas access 122 thus.This outlet 124 is connected to a decompressor, as a pump P outside the reative cell 110, and these reative cell 110 gas inside, extracted out through exporting 124 thus by this pump P.Therefore, the internal pressure Be Controlled of this reative cell 110.Here, this outlet 124 is regarded as a blast pipe.
In this reative cell 110, a carrier 130 is parallel to downside 112 arrangements of this reative cell 110, and this substrate 100 is placed on this carrier 130.This carrier 130 is connected to a carrier stay pipe 130a, and it passes the downside 112 of this reative cell 110.Though do not show among the figure that this carrier 130 wherein has a heater usually, to quicken the chemical reaction of this reacting gas.
This reative cell 110 wherein also comprises a syringe 126, and this syringe 126 is connected to this gas access 122.This syringe spreads the reacting gas of 122 supplies through gas access thus equably, and the space between this syringe 126 and substrate 100 becomes a conversion zone 110a.
In addition, an evacuating plate 150 is formed in this reative cell 110.This evacuating plate 150 is placed in 112 of the carrier 130 of this reative cell 110 and downsides, and and a sidewall 114 of reative cell 110 have one at interval.Therefore 112 of the evacuating plate 150 of this reative cell 110 and downsides, form the regional 120a that bleeds.
In this reative cell 110 among Fig. 3, this substrate 100 is placed on this carrier 130, and this reative cell 110 is sealed.Then, from then on the gas in this reative cell 110 exported 124 by pump P and take out light, and this reative cell 110 is in vacuum state.This heater produces heat, so this substrate 100 is heated.This reacting gas through gas access thus 122 and this syringe 126 be injected into this reative cell 110, and the chemical reaction of reacting gas is by this carried out the technology of deposition or patterning.At this moment, what the reacting gas of a reaction residue and a part continued is discharged this reative cell 110 by this pump P, so internal pressure keeps necessarily.This reative cell 110 has a discharge structure at downside 112, to discharge the reacting gas of this reaction residue and part.
Fig. 4 is a summary plane graph of the reative cell of Fig. 3, and shows the discharge structure of this reative cell.As above-mentioned, this reative cell 110 in Fig. 3 comprises this evacuating plate 150, between 112 of the carrier 130 of this reative cell 110 and downsides.The size of this evacuating plate 150 is greater than the carrier 130 of reative cell 110, less than the downside 112 of reative cell 110.Therefore, this evacuating plate 150 and the sidewall of this reative cell 110 in Fig. 3 have one at interval, and form this regional 120a that bleeds at the evacuating plate 150 and 112 of the downsides of reative cell 110.This regional 120a that bleeds is around carrier stay pipe 130a.
Here, the downside 112 of this reative cell 110 has a steam vent 121, be connected to this outlet 124, and this evacuating plate 150 covers this steam vent 121.Therefore, this regional 120a that bleeds is connected to this steam vent 121.
This carrier 130 and this evacuating plate 150 preferably are of similar shape with the downside 112 of this reative cell 110.Among Fig. 4, though the downside 112 of this reative cell 110, this carrier 130 and this evacuating plate 150 have the shape of a rectangle, the downside 112 of this reative cell 110, carrier 130 and evacuating plate 150 also can have the shape of a circle.
In this reative cell 110 of the present invention, if this pump P running, the air pressure of this regional 120a that bleeds is lower than this conversion zone 110a.This reaction residue among this conversion zone 110a and the reacting gas of this part flow to extraction zone territory 120a via the space of 114 of the evacuating plate 150 of reative cell 110 and sidewalls.Then, if arrow is indicated, the reacting gas of this reaction residue and this part is extracted out by this pump P through steam vent 121 and this outlet 124 thus.
Although suction pressure is concentrated near the zone this steam vent 121, this suction pressure is dispersed in this regional 120a that bleeds uniformly.Therefore, this depositing of thin film or patterning are finished uniformly, and comprise that the quality of this device of this film is enhanced.In addition, the reliability of this technology has increased.In addition, reative cell of the present invention has simple structure.
Those of ordinary skills can to manufacturing of the present invention and application, make different changes, composition and modification under the situation that does not deviate from spirit and scope of the invention.Therefore the present invention should comprise all modifications and the modification that falls in the scope that claim and equivalent thereof delimit.
Claims (6)
1. the manufacturing equipment of a semiconductor device is characterized in that, comprises:
One reative cell has: a upper wall, a lower wall and a sidewall, and this reative cell comprises a steam vent, and by this lower wall, this sidewall is between between this upper wall and this lower wall;
One carrier in this reative cell, is held a substrate thereon, and this carrier is parallel to this lower wall;
One evacuating plate, between this carrier and this lower wall, this evacuating plate and this sidewall leave at interval and this evacuating plate covers this steam vent; With
One depressurized system, outside this reative cell, this depressurized system is connected to this steam vent,
Wherein
This evacuating plate have the shape identical with this downside and and this downside between leave at interval, and the size of this evacuating plate is greater than this carrier but less than this downside.
2. the manufacturing equipment of semiconductor device as claimed in claim 1, it is characterized in that: the size of this evacuating plate is greater than this carrier.
3. the manufacturing equipment of semiconductor device as claimed in claim 1 is characterized in that: this evacuating plate and this lower wall have the shape of a rectangle.
4. the manufacturing equipment of semiconductor device as claimed in claim 1 is characterized in that: this evacuating plate and this lower wall have the shape of a circle.
5. the manufacturing equipment of semiconductor device as claimed in claim 1, it is characterized in that: this depressurized system comprises a pump.
6. the manufacturing equipment of semiconductor device as claimed in claim 1 is characterized in that, also comprises:
One blast pipe is between this steam vent and this depressurized system.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20022091 | 2002-01-14 | ||
| KR10-2002-0002091A KR100506259B1 (en) | 2002-01-14 | 2002-01-14 | Manufacturing apparatus for liquid crystal display |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1433048A CN1433048A (en) | 2003-07-30 |
| CN1294620C true CN1294620C (en) | 2007-01-10 |
Family
ID=27656307
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031003702A Expired - Fee Related CN1294620C (en) | 2002-01-14 | 2003-01-13 | Semiconductor device making apparatus |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR100506259B1 (en) |
| CN (1) | CN1294620C (en) |
| TW (1) | TWI265549B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1968098A1 (en) * | 2007-03-08 | 2008-09-10 | Applied Materials, Inc. | Suction device for plasma coating chamber |
| KR102625511B1 (en) * | 2016-10-05 | 2024-01-16 | 주성엔지니어링(주) | Loadlock chamber and method for discharging particle of loadlock chamber |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11312668A (en) * | 1998-04-28 | 1999-11-09 | Rohm Co Ltd | Cleaning method in dry etching device for semiconductor wafer |
| US20010047849A1 (en) * | 1997-09-02 | 2001-12-06 | Nobuhiro Jiwari | Apparatus and method for fabricating semiconductor device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3113796B2 (en) * | 1995-07-10 | 2000-12-04 | 東京エレクトロン株式会社 | Plasma processing equipment |
| JP3002448B1 (en) * | 1998-07-31 | 2000-01-24 | 国際電気株式会社 | Substrate processing equipment |
| JP2000223429A (en) * | 1998-11-27 | 2000-08-11 | Toshiba Corp | Film-forming device, film-forming method and cleaning method therefor |
| JP2001267304A (en) * | 2000-03-22 | 2001-09-28 | Hitachi Kokusai Electric Inc | Semiconductor manufacturing device |
-
2002
- 2002-01-14 KR KR10-2002-0002091A patent/KR100506259B1/en active IP Right Grant
-
2003
- 2003-01-13 CN CNB031003702A patent/CN1294620C/en not_active Expired - Fee Related
- 2003-01-13 TW TW092100659A patent/TWI265549B/en not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010047849A1 (en) * | 1997-09-02 | 2001-12-06 | Nobuhiro Jiwari | Apparatus and method for fabricating semiconductor device |
| JPH11312668A (en) * | 1998-04-28 | 1999-11-09 | Rohm Co Ltd | Cleaning method in dry etching device for semiconductor wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1433048A (en) | 2003-07-30 |
| TWI265549B (en) | 2006-11-01 |
| KR100506259B1 (en) | 2005-08-05 |
| TW200301919A (en) | 2003-07-16 |
| KR20030061554A (en) | 2003-07-22 |
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| CF01 | Termination of patent right due to non-payment of annual fee |
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