CN1294559C - Double-barrier tunnel junction senser having effect of resonance tunnel pass - Google Patents
Double-barrier tunnel junction senser having effect of resonance tunnel pass Download PDFInfo
- Publication number
- CN1294559C CN1294559C CNB2004100811703A CN200410081170A CN1294559C CN 1294559 C CN1294559 C CN 1294559C CN B2004100811703 A CNB2004100811703 A CN B2004100811703A CN 200410081170 A CN200410081170 A CN 200410081170A CN 1294559 C CN1294559 C CN 1294559C
- Authority
- CN
- China
- Prior art keywords
- layer
- tunnel junction
- tunneling effect
- bibarrier
- semimetal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Hall/Mr Elements (AREA)
Abstract
The present invention discloses a double-barrier tunnel junction sensor having an effect of resonance tunnel pass, which comprises a lower layer (L1), a first tunnel insulation layer (I1) formed over the lower layer (L1), a middle layer (L2) formed over the first tunnel insulation layer (I1), a second tunnel insulation layer (I2) formed over middle layer (L2) and an upper layer (L3) formed over the second tunnel insulation layer (I2), wherein the lower layer (L1) is made from ferromagnetic materials or semi-ferromagnetic materials; the middle layer (L2) is made from the ferromagnetic materials or semi-metal magnetic materials or non magnetic metal materials or semiconductor materials; the upper layer (L3) is composed of a ferromagnetic layer or a semi-metal magnetic layer. The resonance tunnel pass effect occurs in the process of electrons passing through the two tunnel insulation layers by the structure, and accordingly, the present invention has higher TMR values and the magnetic sensor made from tunnel junctions has high resolution.
Description
Technical field
The present invention relates to the tunnel junction magnetic head, relate in particular to bibarrier tunnel junction sensor with resonance tunneling effect.
Background technology
From Fert in 1988 finds giant magnetoresistance effect (GMR) in magnetoresistance effect since, obtained remarkable progress in the research and the application of physics and material science.High sensor and the hard disc magnetic head made of the GMR effect dominate the market rapidly, use present GMR playback head after, the recording density of hard disk reaches 30Gbits/in
2, improve nearly 500 times.After nineteen ninety-five Miyazaki etc. has found room temperature large magnetic resistance effect (TMR), utilize the MTJ developing material more the next generation computer playback head and more the high density rigid disc system be present one of numerous in the world major companies target of chasing, wherein TDK company is especially in May, 2000 on-the-spot TMR playback head of putting on display in the technology exhibition that oneself holds.After foretelling two, three years, the expert stand in 100Gbits/in
2Or on the high density recording dish will be the TMR playback head more.In addition, study also in rapid expansion with the relevant physical basis of MTJ.Zhang[X.D.Zhang in 1997, Phys.Rev.B56 (1997) 5484] foretold that theoretically a kind of TMR value with bibarrier tunnel junction of resonance tunneling effect is 2 times of unipotential tunnel junction barrier, if make sensor with this dual-potential magnetic tunnel, this sensor will be to the faint magnetic resistance change rate of magnetic field generation more than 100%.S.Yuasa[S.Yuasa in 2002, Science 297 (2002) 234] in MTJ, found spin polarization resonance tunnel-through phenomenon.Because bibarrier tunnel junction exists abundant physical phenomenon to reach using value widely, causes the vast scientific and technological work person's in the world attention.Yet, experimentally, how to design a kind of bibarrier tunnel junction with resonance tunneling effect, never be well solved.
Summary of the invention
Problem at prior art exists the purpose of this invention is to provide a kind of bibarrier tunnel junction sensor with resonance tunneling effect.
For achieving the above object, a kind of bibarrier tunnel junction sensor with resonance tunneling effect provided by the invention comprises:
A lower layer, this lower layer is made by ferrimagnet or half ferrimagnet;
First tunnel insulation layer that is formed on the described lower layer;
A middle layer that is formed on described first tunnel insulation layer, this layer is made by ferrimagnet or semimetal magnetic material or nonmagnetic material or semiconductor material;
Second tunnel insulation layer that is formed on the middle layer; With
A upper layer that is formed on second tunnel insulation layer, this layer is made of ferromagnetic layer or semimetal magnetosphere;
Wherein, described lower layer is made of ferromagnetic layer, an antiferromagnetic layer and a ferromagnetic layer that is formed on the antiferromagnetism that is formed on this ferromagnetic layer, and described upper layer is made of one deck ferromagnetic layer and another ferromagnetic layer.
Further, the bibarrier tunnel junction sensor of another kind provided by the invention with resonance tunneling effect comprises:
A lower layer, this lower layer is made by ferrimagnet or semimetal magnetic material;
First tunnel insulation layer that is formed on the described lower layer;
A middle layer that is formed on described first tunnel insulation layer, this layer is made by ferrimagnet or semimetal magnetic material or nonmagnetic material or semiconductor material;
Second tunnel insulation layer that is formed on the middle layer; With
A upper layer that is formed on second tunnel insulation layer, this layer is made of ferromagnetic layer or semimetal magnetosphere;
Wherein, described lower layer is made of ferromagnetic layer and another ferromagnetic layer, and described upper layer is made of ferromagnetic layer, an antiferromagnetic layer and a ferromagnetic layer that is formed on the antiferromagnetism that is formed on this ferromagnetic layer.
Further, the bibarrier tunnel junction sensor of another kind provided by the invention with resonance tunneling effect comprises:
A lower layer, this lower layer is made by ferrimagnet or semimetal magnetic material;
First tunnel insulation layer that is formed on the described lower layer;
A middle layer that is formed on described first tunnel insulation layer, this layer is made by ferrimagnet or semimetal magnetic material or nonmagnetic material or semiconductor material;
Second tunnel insulation layer that is formed on the middle layer; With
A upper layer that is formed on second tunnel insulation layer, this layer is made of ferromagnetic layer or semimetal magnetosphere;
Wherein, described lower layer is made of ferromagnetic layer, an antiferromagnetic layer and a ferromagnetic layer that is formed on the antiferromagnetism that is formed on this ferromagnetic layer, described middle layer is made of ferromagnetic layer or semimetal magnetosphere, an antiferromagnetic layer and a ferromagnetic layer or a semimetal magnetosphere that is formed on the antiferromagnetism that is formed on this layer, and described upper layer is made of ferromagnetic layer or semimetal magnetosphere and another ferromagnetic layer.
Further, the bibarrier tunnel junction sensor of another kind provided by the invention with resonance tunneling effect comprises:
A lower layer, this lower layer is made by ferrimagnet or semimetal magnetic material;
First tunnel insulation layer that is formed on the described lower layer;
A middle layer that is formed on described first tunnel insulation layer, this layer is made by ferrimagnet or semimetal magnetic material or nonmagnetic material or semiconductor material;
Second tunnel insulation layer that is formed on the middle layer; With
A upper layer that is formed on second tunnel insulation layer, this layer is made of ferromagnetic layer or semimetal magnetosphere;
Wherein, described lower layer is made of ferromagnetic layer and another ferromagnetic layer, described middle layer is made of ferromagnetic layer, an antiferromagnetic layer and a ferromagnetic layer or a semimetal magnetosphere that is formed on the antiferromagnetism that is formed on this ferromagnetic layer, and described upper layer is made of ferromagnetic layer, an antiferromagnetic layer and a ferromagnetic layer or a semimetal magnetosphere that is formed on the antiferromagnetism that is formed on this ferromagnetic layer.
Beneficial effect of the present invention is: adopt this structure, have higher TMR value owing to resonance tunneling effect takes place electronics in two portions of tunnelling tunnel insulation layer process, thereby the Magnetic Sensor of making of this tunnel junction has higher resolution.
Description of drawings
The invention will be further described below in conjunction with drawings and Examples.In the accompanying drawing, FM represents ferrimagnet, and NM represents nonmagnetic material, and SM represents semiconductor material, and HM represents semimetal magnetic material.
Fig. 1 is the bibarrier tunnel junction principle of sensors figure that the present invention has resonance tunneling effect.
Fig. 2 is a bibarrier tunnel junction perspective view with resonance tunneling effect that is used for Magnetic Sensor among the present invention.
Fig. 3 is a bibarrier tunnel junction structural representation with resonance tunneling effect that is used for sensor among the present invention.
Fig. 4 is the structural representation that first embodiment of the invention has the bibarrier tunnel junction sensor of resonance tunneling effect.
Fig. 5 is the structural representation that second embodiment of the invention has the bibarrier tunnel junction sensor of resonance tunneling effect.
Fig. 6 is the structural representation that fourth embodiment of the invention has the bibarrier tunnel junction sensor of resonance tunneling effect.
Fig. 7 is the follow-on structure with bibarrier tunnel junction sensor of resonance tunneling effect of the present invention.
Embodiment:
Structure with bibarrier tunnel junction of resonance tunneling effect of the present invention adopts one by this MR sense current, just can detect the resistance variations of the MR sensor that the rotation owing to the direction of magnetization of free layer causes, with its function as the magnetic field of being detected.
Fig. 1 is a kind of bibarrier tunnel junction principle of sensors of the present invention figure.
As Fig. 1 a and 1b, sensor comprises a lower layer L1, is made by ferrimagnet or semimetal magnetic material; A middle layer L2 is made by ferrimagnet or semimetal magnetic material or nonmagnetic material or semiconductor material; And a upper layer L3, make by ferrimagnet or semimetal magnetic material; The composition that accompanies thickness respectively and be several nanometers between lower layer L1 and middle layer L2 and middle layer L2 and upper layer L3 is the first tunnel insulation layer I1 and the second tunnel insulation layer I2 of oxide or nitride or other material.Spin direction upwards and the downward electronics of spin direction passes through the first tunnel insulation layer I1 and the second tunnel insulation layer I2 is mobile with the form of resonance tunnel electric current, and this tunnel current is usually perpendicular to the tunnel insulation layer surface.
In Fig. 1 a, when middle layer L2 was nonmagnetic metal or semiconductor, the direction of magnetization of lower layer L1 was fixed, and the direction of magnetization of upper layer L3 is freely.In Fig. 1 b, when middle layer L2 was magnetic material or semimetal magnetic material, the direction of magnetization of lower layer L1 and middle layer L2 was fixed, and is parallel, and the direction of magnetization of upper layer L3 is freely.Under the situation that has external magnetic field H, the direction of magnetization of upper layer L3 can change with the external magnetic field.In this bibarrier tunnel junction sensor, the magnetic field intensity of electron resonance tunnelling probability and lower layer L1, middle layer L2 and upper layer L3 and changing, and its tunnelling resistance R changes with external magnetic field H, and variation relation is as follows:
R＝R
s+(1/2)·ΔR(1-cosθ) (1)
Wherein, R
sThe tunnel resistor of representative under a benchmark attitude, promptly under this benchmark attitude, lower layer L1, (middle layer L2) are parallel with the direction of magnetization of upper layer L3, θ represents the formed angle of direction of magnetization among lower layer L1 and upper layer L3 (middle layer L2 is nonmagnetic metal or semiconductor) or middle layer L2 and the upper layer L3 (middle layer L2 is magnetosphere or semimetal magnetosphere), Δ R then represents tunnel resistor R variation between the parallel and antiparallel two states in direction of magnetization, by can determine that it is Δ R/R that a tunnel resistor changes than (TMR).
In MTJ, its tunnel magneto resistance is more relevant with the magnetospheric spin polarizability on potential barrier both sides than Δ R/R.Build in the MTJ at unipotential, they satisfy following relation:
TMR
STJ＝2P
1P
2/(1-P
1P
2) (2)
And in dual-potential magnetic tunnel, then satisfy following relation:
TMR
DMTJ＝2(P
1P
2+P
2P
3)/(1-P
1P
2-P
2P
3+P
3P
1) (3)
In formula (2) and (3), P
1Represent the spin polarizability of each layer magnetic material.From above-mentioned two formula as can be known, dual-potential magnetic tunnel has 2 times of TMR values of building MTJ to unipotential.On the other hand, when middle layer L2 is nonmagnetic metal or semiconductor,, when electronics passes through in the resonance tunnel-through mode when lower layer L1 is tunneling to upper layer L3, thereby higher TMR value is arranged because electronics has long mean free path in nonmagnetic metal and the semiconductor.The sensor of making of this tunnel junction will have higher resolution.
As shown in Figure 3, bibarrier tunnel junction with resonance tunneling effect of the present invention comprises the first tunnel barrier layer I1 and the second tunnel barrier layer I2, a lower layer L1 who forms by ferrimagnet or semimetal magnetic material, a middle layer L2 who forms by ferrimagnet or semimetal magnetic material or nonmagnetic material or semiconductor material, a upper layer L3 who forms by ferrimagnet or semimetal magnetic material; The first tunnel barrier layer I1 is between lower layer L1 and middle layer L2, and the second tunnel barrier layer I2 is between middle layer L2 and upper layer L3.
As shown in Figure 2, lower layer L1, middle layer L2 and upper layer L3 are respectively formed at cross one another three conductive strips among Fig. 2, wherein, form a tunnel insulation layer I1 and I2 in the intersection of per two conductive strips.Electric current passes the first tunnel insulation layer I1 and the second tunnel insulation layer I2 and flows between lower layer L1, middle layer L2 and upper layer L3, by detecting the voltage difference that occurs between lower layer L1 and the upper layer L3, can determine the tunnel resistor of the first tunnel insulation layer I1 and the second tunnel insulation layer I2.Should be noted that when middle layer L2 is nonmagnetic layer as Fig. 1 a, the direction of magnetization of lower layer L1 is fixed, promptly the antiferromagnetic layer of one deck is arranged at the bottom in lower layer L1; When middle layer L2 was magnetosphere or semimetal magnetosphere, as Fig. 1 b, the direction of magnetization of lower layer L1 and middle layer L2 was all fixed, and is parallel, and the antiferromagnetic layer of one deck is promptly respectively arranged in the bottom of lower layer L1 and middle layer L2.The direction of magnetization of upper layer L3 can freely change with the external magnetic field.Along with the change of the direction of magnetization of upper layer L3, corresponding variation also takes place in the resistance of bibarrier tunnel junction.
First embodiment:
Fig. 4 shows the structure of the bibarrier tunnel junction with resonance tunneling effect of the first embodiment of the present invention.
Among Fig. 4, by silicon dioxide (SiO
2) or a tunnel insulation layer 21 making of similar material be formed on the silicon chip 20, on tunnel insulation layer 21, form bottom L1 layer by layer, this layer is made of ferromagnetic layer 22A, an antiferromagnetic layer 22B and a ferromagnetic layer 22C who is formed on the antiferromagnetic layer 22B who is formed on this ferromagnetic layer 22A, and the direction of magnetization of lower layer L1 is fixed on the position; A first tunnel insulation layer I1 who is formed on the ferromagnetic layer 22C, and on the first tunnel insulation layer I1, form one deck middle layer L2, this layer is made by nonmagnetic metal or semiconductor; A second tunnel insulation layer I2 who is formed on the L2 of middle layer; A upper layer L3 who is formed on the second tunnel insulation layer I2, this upper layer L3 is made of one deck ferromagnetic layer 24A and another ferromagnetic layer 24C.The direction of magnetization of lower layer L1 and upper layer L3 is not having approximately to become an angle of 90 degrees under the action of a magnetic field, and the change of the direction of magnetization of upper layer L3 is to be reacted and rotate formation in the magnetic field of an effect.
Should be noted that the aforementioned first tunnel insulation layer I1 and the second tunnel insulation layer I2 are by metal oxide dielectric film or metal nitride dielectric film, organic or inorganic insulated with material film or diamond like carbon film or EuS or Ga
2O
3Make; Ferromagnetic layer can be selected from 3d transition group magnetic metal or 4f rare earth metal and alloy thereof; Antiferromagnetic layer 22B is made of the antiferromagnetic alloy of Pt-Mn, Pd-Mn, Fe-Mn, Ir-Mn or Rh-Mn; Middle layer L2 can be made of nonmagnetic metal such as Au, Cu and Cr and semiconductor materials such as Si, Ga, InGaAs or InAs.
In addition, it should be noted that middle layer L2 thickness should be comparable with the electron mean free path of this layer material, can guarantee like this that electronics suffered scattering in the L2 of middle layer is more weak and the phase place memory that keeps electronics, thereby improve the probability of electron resonance tunnelling.
The TMR value of formed as described above bibarrier tunnel junction sensor surpasses 15% when just forming, by in vacuum environment it is carried out thermal anneal process under 200～330 ℃, TMR can surpass 30% or higher.
Second embodiment
In the above-described embodiments, the direction of magnetization of upper layer L3 can change with the external magnetic field, and the direction of magnetization of lower layer L1 is fixed, for this reason, the thicker antiferromagnetic layer 22B of minister's one deck under ferromagnetic layer 22C, yet, can increase the surfaceness of 22C layer like this, when forming the first tunnel insulation layer I1 again on 22C, this surfaceness can influence their interfacial characteristics, and then influences the performance of sensor.At the problems referred to above, the direction of magnetization that present embodiment proposes a kind of upper layer L3 is fixed and the direction of magnetization of lower layer L1 is a bibarrier tunnel junction sensor freely.
Fig. 5 shows the structure according to the bibarrier tunnel junction sensor with resonance tunneling effect of second embodiment of the invention.
As shown in Figure 5, by silicon dioxide (SiO
2) or a tunnel insulation layer 31 making of similar material be formed on the silicon chip 30, on tunnel insulation layer 31, form a lower layer L1, this layer is to be made of ferromagnetic layer 32A and another ferromagnetic layer 32C that is formed on this ferromagnetic layer 32A, the direction of magnetization of lower layer L1 is freely on the position, can change with the external magnetic field; A first tunnel insulation layer I1 who is formed on the ferromagnetic layer 32C, and on the first tunnel insulation layer I1, form one deck middle layer L2, this layer is made by nonmagnetic material or semiconductor material; The second tunnel insulation layer I2 and a upper layer L3 who is formed on the L2 of middle layer, this layer are made of ferromagnetic layer 33A, an antiferromagnetic layer 33B and a ferromagnetic layer 33C who is formed on the ferromagnetic layer 33A.The direction of magnetization of lower layer L1 and upper layer L3 is to be reacted and rotate formation in the magnetic field of an effect not having under the action of a magnetic field approximately to become an angle of 90 degrees, the change of the direction of magnetization of lower layer L1.
The same with first embodiment, the aforementioned first tunnel insulation layer I 1 and the second tunnel insulation layer I2 comprise metal oxide dielectric film or metal nitride dielectric film, organic or inorganic insulated with material film or diamond like carbon film or EuS or Ga
2O
3Ferromagnetic layer can be selected from 3d transition group magnetic metal or 4f rare earth metal and alloy thereof; Antiferromagnetic layer 32B is made of the antiferromagnetic alloy of Pt-Mn, Pd-Mn, Fe-Mn, Ir-Mn or Rh-Mn; Middle layer L2 can be made of nonmagnetic metal such as Au, Cu and Cr and semiconductor materials such as Si, Ga, InGaAs or InAs, and middle layer L2 thickness should be comparable with the electron mean free path of this layer material, the phase place memory that can guarantee like this that electronics suffered scattering in the L2 of middle layer is more weak and keep electronics, thus the probability of electron resonance tunnelling improved.
In the bibarrier tunnel junction sensor of present embodiment, because thicker antiferromagnetic layer 33B is formed on the first tunnel insulation layer I1 and the second tunnel insulation layer I2, reduce the roughness of following each laminar surface of antiferromagnetic layer 33B, thereby improved the interface performance between each layer.And the interface performance on the TMR value of MTJ size and tunnel insulation layer both sides has much relations.So the TMR value of formed as described above bibarrier tunnel junction sensor is than the height of first embodiment.
The 3rd embodiment
From early stage theory as can be known, the TMR value of tunnel junction is relevant with the spin polarizability of potential barrier both sides material, and theoretical and experiment showed, almost 100% spin polarizability of semimetal magnetic material, and the bibarrier tunnel junction made from this material has higher TMR value.Given this, present embodiment provides a kind of bibarrier tunnel junction sensor with resonance tunneling effect based on semimetal magnetic material.
The structure of the bibarrier tunnel junction sensor of present embodiment is similar to second embodiment.As Fig. 5, by silicon dioxide (SiO
2) or a tunnel insulation layer 31 making of similar material be formed on the silicon chip 30, on tunnel insulation layer 31, form a lower layer L1, this layer is to be made of ferromagnetic layer 32A and a semimetal magnetosphere 32C who is formed on this ferromagnetic layer 32A, the direction of magnetization of this layer is freely on the position, can change with the external magnetic field; A first tunnel insulation layer I1 who is formed on the semimetal magnetosphere 32C, and on the first tunnel insulation layer I1, form one deck middle layer L2, this layer is made by nonmagnetic material or semiconductor material; The second tunnel insulation layer I2 and a upper layer L3 who is formed on the L2 of middle layer, this layer are made of semimetal magnetosphere 34A, an antiferromagnetic layer 34B and a ferromagnetic layer 34C who is formed on the semimetal magnetosphere 34A.The direction of magnetization of semimetal magnetosphere 32C and semimetal magnetosphere 34A is not having approximately to become an angle of 90 degrees under the action of a magnetic field, and the change of the direction of magnetization of semimetal magnetosphere 32C is to be reacted and rotate formation in the magnetic field of an effect.
Equally, the aforementioned first tunnel insulation layer I1 and the first tunnel insulation layer I2 comprise metal oxide dielectric film or metal nitride dielectric film, organic or inorganic insulated with material film or diamond like carbon film or EuS or Ga
2O
3Ferromagnetic layer can be selected from 3d transition group magnetic metal or 4f rare earth metal and alloy thereof; Antiferromagnetic layer is made of the antiferromagnetic alloy of Pt-Mn, Pd-Mn, Fe-Mn, Ir-Mn or Rh-Mn; The semimetal magnetosphere is made by semimetal magnetic material, comprises Fe
3O
4, CrO
2, La
0.7Sr
0.3MnO
3Or the Heuseler alloy constitutes; Middle layer L2 can be made of nonmagnetic metal such as Au, Cu and Cr and semiconductor materials such as Si, Ga, InGaAs or InAs, and the thickness of middle layer L2 should be comparable with the electron mean free path of this layer material, the phase place memory that can guarantee like this that electronics suffered scattering in the L2 of middle layer is more weak and keep electronics, thus the probability of electron resonance tunnelling improved.
The 4th embodiment
In the above-described embodiments, the material of middle layer L2 all uses nonmagnetic metal or semiconductor material, if substitute it with ferrimagnet or semimetal magnetic material, according to formula (2), the TMR value of this bibarrier tunnel junction is 2 times of its corresponding unipotential tunnel junction barrier TMR value in theory.Given this, in the present embodiment, the bibarrier tunnel junction sensor that to propose a kind of three layers (lower layer L1, middle layer L2, upper layer L3) all be ferrimagnet or semimetal magnetic material with resonance tunneling effect.
Fig. 6 shows the structure of the bibarrier tunnel junction sensor with resonance tunneling effect of a fourth embodiment in accordance with the invention.
As shown in Figure 6, by silicon dioxide (SiO
2) or a tunnel insulation layer 41 making of similar material be formed on the silicon chip 40, on tunnel insulation layer 41, form a lower layer L1, this layer is to be made of ferromagnetic layer 42A, an antiferromagnetic layer 42B and a ferromagnetic layer or a semimetal magnetosphere 42C who is formed on the antiferromagnetic layer 42B who is formed on this ferromagnetic layer 42A, and the direction of magnetization of lower layer L1 is fixed on the position; A first tunnel insulation layer I1 who is formed on the ferromagnetic layer 42C, and on the first tunnel insulation layer I1, forming one deck middle layer L2, this layer is by ferromagnetic layer or semimetal magnetosphere 43A, an antiferromagnetic layer 43B and a ferromagnetic layer or a semimetal magnetosphere 43C who is formed on the antiferromagnetic layer 43B who is formed on this layer; A second tunnel insulation layer I2 who is formed on ferromagnetic layer or the semimetal magnetosphere 43C; A upper layer L3 who is formed on the second tunnel insulation layer I2, upper layer L3 is made of ferromagnetic layer or semimetal magnetosphere 44A and another ferromagnetic layer 44B, and the direction of magnetization of this layer can change with the external magnetic field.Lower layer L1 is parallel with the direction of magnetization of middle layer L2 not having under the action of a magnetic field, and upper layer L3 is not having approximately to become an angle of 90 degrees under the action of a magnetic field with the direction of magnetization of middle layer L2 or lower layer L1.The change of the direction of magnetization of upper layer L3 is to be reacted and rotate formation in the magnetic field of an effect.
Material therefor is similar to previous embodiment in the present embodiment, its description of Therefore, omited.
Though invention has been described based on the foregoing description, the present invention is not limited thereto.For example, following modification is feasible.
In the 4th embodiment, the direction of magnetization of upper layer L1 is changed with the external magnetic field, and the direction of magnetization of middle layer L2 and upper layer L3 is fixed, and promptly not having approximately to become an angle of 90 degrees under the action of a magnetic field with the direction of magnetization of upper layer L1, its structure is as shown in Figure 7.It is identical with the 4th embodiment that the descriptions thereof are omitted.Different with the 4th embodiment is: removed antiferromagnetic layer 42B in lower layer L1, and insert one deck antiferromagnetic layer 44B in upper layer L3.Illustrated with second embodiment, this structure helps to improve the TMR value of tunnel junction, and then improves the resolution of sensor.
Though in conjunction with the accompanying drawings the present invention has been carried out sufficient description, it is noted that for the person of ordinary skill of the art various changes and modification all are possible.Therefore, except this change and modification deviate from the category of the present invention, they all should be included among the present invention.
Claims (28)
1, a kind of bibarrier tunnel junction sensor with resonance tunneling effect is characterized in that it comprises:
A lower layer (L1), this lower layer (L1) is made by ferrimagnet or semimetal magnetic material;
First tunnel insulation layer (I1) that is formed on the described lower layer (L1);
A middle layer (L2) that is formed on described first tunnel insulation layer (I1), this layer is made by ferrimagnet or semimetal magnetic material or nonmagnetic material or semiconductor material;
Second tunnel insulation layer (I2) that is formed on the middle layer (L2); With
A upper layer (L3) that is formed on second tunnel insulation layer (I2), this layer is made of ferromagnetic layer or semimetal magnetosphere;
Wherein, described lower layer (L1) is made of ferromagnetic layer (22A), an antiferromagnetic layer (22B) and a ferromagnetic layer (22C) that is formed on the antiferromagnetic layer (22B) that is formed on this ferromagnetic layer (22A), and described upper layer (L3) is made of one deck ferromagnetic layer (24A) and another ferromagnetic layer (24C).
2, the bibarrier tunnel junction sensor with resonance tunneling effect as claimed in claim 1, it is characterized in that, described first tunnel insulation layer (I1) and second tunnel insulation layer (I2) are made by insulating material, comprise metal oxide dielectric film or metal nitride dielectric film, organic or inorganic insulated with material film or diamond like carbon film or EuS or Ga
2O
3
3, the bibarrier tunnel junction sensor with resonance tunneling effect as claimed in claim 1 or 2 is characterized in that, described ferrimagnet comprises 3d transition group magnetic metal or 4f rare earth metal and 3d transition group magnetic metal or 4f rare earth alloys.
4, the bibarrier tunnel junction sensor with resonance tunneling effect as claimed in claim 3 is characterized in that described semimetal magnetic material comprises Fe
3O
4, CrO
2, La
0.7Sr
0.3MnO
3Or Heuseler alloy.
5, the bibarrier tunnel junction sensor with resonance tunneling effect as claimed in claim 4 is characterized in that, described nonmagnetic material comprises Au, Cu or Cr and Au, Cu or Cr alloy.
6, the bibarrier tunnel junction sensor with resonance tunneling effect as claimed in claim 5 is characterized in that described semiconductor material comprises Si, Ga, InGaAs or InAs.
7, the bibarrier tunnel junction sensor with resonance tunneling effect as claimed in claim 6 is characterized in that, described antiferromagnetic layer (22B) is made by the antiferromagnetic alloy of Pt-Mn, Pd-Mn, Fe-Mn, Ir-Mn or Rh-Mn.
8, a kind of bibarrier tunnel junction sensor with resonance tunneling effect is characterized in that it comprises:
A lower layer (L1), this lower layer (L1) is made by ferrimagnet or semimetal magnetic material;
First tunnel insulation layer (I1) that is formed on the described lower layer (L1);
A middle layer (L2) that is formed on described first tunnel insulation layer (I1), this layer is made by ferrimagnet or semimetal magnetic material or nonmagnetic material or semiconductor material;
Second tunnel insulation layer (I2) that is formed on the middle layer (L2); With
A upper layer (L3) that is formed on second tunnel insulation layer (I2), this layer is made of ferromagnetic layer or semimetal magnetosphere;
Wherein, described lower layer (L1) is made of ferromagnetic layer (32A) and another ferromagnetic layer (32C), and described upper layer (L3) is made of ferromagnetic layer (34A), an antiferromagnetic layer (34B) and a ferromagnetic layer (34C) that is formed on the antiferromagnetic layer (34B) that is formed on this ferromagnetic layer (34A).
9, the bibarrier tunnel junction sensor with resonance tunneling effect as claimed in claim 8, it is characterized in that, described first tunnel insulation layer (I1) and second tunnel insulation layer (I2) are made by insulating material, comprise metal oxide dielectric film or metal nitride dielectric film, organic or inorganic insulated with material film or diamond like carbon film or EuS or Ga
2O
3
10, have the bibarrier tunnel junction sensor of resonance tunneling effect as claimed in claim 8 or 9, it is characterized in that, described ferrimagnet comprises 3d transition group magnetic metal or 4f rare earth metal and 3d transition group magnetic metal or 4f rare earth alloys.
11, the bibarrier tunnel junction sensor with resonance tunneling effect as claimed in claim 10 is characterized in that described semimetal magnetic material comprises Fe
3O
4, CrO
2, La
0.7Sr
0.3MnO
3Or Heuseler alloy.
12, the bibarrier tunnel junction sensor with resonance tunneling effect as claimed in claim 11 is characterized in that, described nonmagnetic material comprises Au, Cu or Cr and Au, Cu or Cr alloy.
13, the bibarrier tunnel junction sensor with resonance tunneling effect as claimed in claim 12 is characterized in that described semiconductor material comprises Si, Ga, InGaAs or InAs.
14, the bibarrier tunnel junction sensor with resonance tunneling effect as claimed in claim 13 is characterized in that, described antiferromagnetic layer (34B) is made by the antiferromagnetic alloy of Pt-Mn, Pd-Mn, Fe-Mn, Ir-Mn or Rh-Mn.
15, a kind of bibarrier tunnel junction sensor with resonance tunneling effect is characterized in that it comprises:
A lower layer (L1), this lower layer (L1) is made by ferrimagnet or semimetal magnetic material;
First tunnel insulation layer (I1) that is formed on the described lower layer (L1);
A middle layer (L2) that is formed on described first tunnel insulation layer (I1), this layer is made by ferrimagnet or semimetal magnetic material or nonmagnetic material or semiconductor material;
Second tunnel insulation layer (I2) that is formed on the middle layer (L2); With
A upper layer (L3) that is formed on second tunnel insulation layer (I2), this layer is made of ferromagnetic layer or semimetal magnetosphere;
Wherein, described lower layer (L1) is by ferromagnetic layer (42A), an antiferromagnetic layer (42B) and a ferromagnetic layer (42C) that is formed on the antiferromagnetic layer (42B) that is formed on this ferromagnetic layer (42A) constitutes, described middle layer (L2) is by ferromagnetic layer or semimetal magnetosphere (43A), an antiferromagnetic layer (43B) and a ferromagnetic layer or a semimetal magnetosphere (43C) that is formed on the antiferromagnetic layer (43B) that is formed on this layer constitutes, and described upper layer (L3) is by ferromagnetic layer or semimetal magnetosphere (44A) and another ferromagnetic layer (44C) formation.
16, the bibarrier tunnel junction sensor with resonance tunneling effect as claimed in claim 15, it is characterized in that, described first tunnel insulation layer (I1) and second tunnel insulation layer (I2) are made by insulating material, comprise metal oxide dielectric film or metal nitride dielectric film, organic or inorganic insulated with material film or diamond like carbon film or EuS or Ga
2O
3
As claim 15 or 16 described bibarrier tunnel junction sensors, it is characterized in that 17, described ferrimagnet comprises 3d transition group magnetic metal or 4f rare earth metal and 3d transition group magnetic metal or 4f rare earth alloys with resonance tunneling effect.
18, the bibarrier tunnel junction sensor with resonance tunneling effect as claimed in claim 17 is characterized in that described semimetal magnetic material comprises Fe
3O
4, CrO
2, La
0.7Sr
0.3MnO
3Or Heuseler alloy.
19, the bibarrier tunnel junction sensor with resonance tunneling effect as claimed in claim 18 is characterized in that, described nonmagnetic material comprises Au, Cu or Cr and Au, Cu or Cr alloy.
20, the bibarrier tunnel junction sensor with resonance tunneling effect as claimed in claim 19 is characterized in that described semiconductor material comprises Si, Ga, InGaAs or InAs.
21, the bibarrier tunnel junction sensor with resonance tunneling effect as claimed in claim 20 is characterized in that, described antiferromagnetic layer (42B, 43B) is made by the antiferromagnetic alloy of Pt-Mn, Pd-Mn, Fe-Mn, Ir-Mn or Rh-Mn.
22, a kind of bibarrier tunnel junction sensor with resonance tunneling effect is characterized in that it comprises:
A lower layer (L1), this lower layer (L1) is made by ferrimagnet or semimetal magnetic material;
First tunnel insulation layer (I1) that is formed on the described lower layer (L1);
A middle layer (L2) that is formed on described first tunnel insulation layer (I1), this layer is made by ferrimagnet or semimetal magnetic material or nonmagnetic material or semiconductor material;
Second tunnel insulation layer (I2) that is formed on the middle layer (L2); With
A upper layer (L3) that is formed on second tunnel insulation layer (I2), this layer is made of ferromagnetic layer or semimetal magnetosphere;
Wherein, described lower layer (L1) is made of ferromagnetic layer (42A) and another ferromagnetic layer (42C), described middle layer (L2) is by ferromagnetic layer (43A), an antiferromagnetic layer (43B) and a ferromagnetic layer or a semimetal magnetosphere (43C) that is formed on the antiferromagnetic layer (43B) that is formed on this ferromagnetic layer (43A) constitutes, and described upper layer (L3) is by ferromagnetic layer (44A), an antiferromagnetic layer (44B) and a ferromagnetic layer or a semimetal magnetosphere (44C) that is formed on the antiferromagnetic layer (44B) that is formed on this ferromagnetic layer (44A) constitutes.
23, the bibarrier tunnel junction sensor with resonance tunneling effect as claimed in claim 22, it is characterized in that, described first tunnel insulation layer (I1) and second tunnel insulation layer (I2) are made by insulating material, comprise metal oxide dielectric film or metal nitride dielectric film, organic or inorganic insulated with material film or diamond like carbon film or EuS or Ga
2O
3
As claim 22 or 23 described bibarrier tunnel junction sensors, it is characterized in that 24, described ferrimagnet comprises 3d transition group magnetic metal or 4f rare earth metal and 3d transition group magnetic metal or 4f rare earth alloys with resonance tunneling effect.
25, the bibarrier tunnel junction sensor with resonance tunneling effect as claimed in claim 24 is characterized in that described semimetal magnetic material comprises Fe
3O
4, CrO
2, La
0.7Sr
0.3MnO
3Or Heuseler alloy.
26, the bibarrier tunnel junction sensor with resonance tunneling effect as claimed in claim 25 is characterized in that, described nonmagnetic material comprises Au, Cu or Cr and Au, Cu or Cr alloy.
27, the bibarrier tunnel junction sensor with resonance tunneling effect as claimed in claim 26 is characterized in that described semiconductor material comprises Si, Ga, InGaAs or InAs.
28, the bibarrier tunnel junction sensor with resonance tunneling effect as claimed in claim 27 is characterized in that, described antiferromagnetic layer (43B, 44B) is made by the antiferromagnetic alloy of Pt-Mn, Pd-Mn, Fe-Mn, Ir-Mn or Rh-Mn.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100811703A CN1294559C (en) | 2004-10-10 | 2004-10-10 | Double-barrier tunnel junction senser having effect of resonance tunnel pass |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100811703A CN1294559C (en) | 2004-10-10 | 2004-10-10 | Double-barrier tunnel junction senser having effect of resonance tunnel pass |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1601610A CN1601610A (en) | 2005-03-30 |
| CN1294559C true CN1294559C (en) | 2007-01-10 |
Family
ID=34666982
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100811703A Active CN1294559C (en) | 2004-10-10 | 2004-10-10 | Double-barrier tunnel junction senser having effect of resonance tunnel pass |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1294559C (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100442076C (en) * | 2005-05-27 | 2008-12-10 | 中国科学院物理研究所 | Linear magnetic field sensor and its mfg. method |
| CN100505360C (en) * | 2005-11-15 | 2009-06-24 | 中国科学院物理研究所 | Magnetic multilayer film with linear magnetoresistance effect and its application |
| CN100514694C (en) * | 2006-04-11 | 2009-07-15 | 中国科学院物理研究所 | Logic part and magnetic logic part array based on the dual potential base magnetic tunnel junction |
| CN100550456C (en) * | 2006-05-26 | 2009-10-14 | 中国科学院物理研究所 | A kind of MgO dual-potential magnetic tunnel and uses thereof with quantum effect |
| US9721596B2 (en) * | 2015-02-27 | 2017-08-01 | Seagate Technology Llc | Data reader with resonant tunneling |
| CN111755447B (en) * | 2020-07-13 | 2023-05-12 | 湘潭大学 | High-density ferroelectric memory cell based on multiple logic states and regulation and control method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001144345A (en) * | 1999-11-12 | 2001-05-25 | Toshiba Corp | Magnetoresistive effect element and magnetic memory provided with the same |
| CN1308317A (en) * | 1999-09-16 | 2001-08-15 | 株式会社东芝 | Magnetoresistive element and magnetic memory device |
| CN1367481A (en) * | 2001-01-24 | 2002-09-04 | 雅马哈株式会社 | Magnetic sensor and manufacturing method thereof |
-
2004
- 2004-10-10 CN CNB2004100811703A patent/CN1294559C/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1308317A (en) * | 1999-09-16 | 2001-08-15 | 株式会社东芝 | Magnetoresistive element and magnetic memory device |
| JP2001144345A (en) * | 1999-11-12 | 2001-05-25 | Toshiba Corp | Magnetoresistive effect element and magnetic memory provided with the same |
| CN1367481A (en) * | 2001-01-24 | 2002-09-04 | 雅马哈株式会社 | Magnetic sensor and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1601610A (en) | 2005-03-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1268010C (en) | Tunnel junction and charge perpendicular-to-plane magnetic recording sensors and method of manufacturing thereof | |
| CN101076865A (en) | Spinning current switchable magnetic memory component and method for manufacturing memory component | |
| CN100350495C (en) | Magneto-resistive device having magnetically soft reference | |
| CN1409321A (en) | Reading method for magnet resistance device with soft reference layer | |
| CN100339916C (en) | Amorphous alloys for magnetic devices | |
| CN1801331A (en) | Magnetic tunnel junctions using amorphous materials as reference and free layers | |
| CN1961377A (en) | Spin barrier enhanced magnetoresistance effect element and magnetic memory using the same | |
| CN1883007A (en) | Current confined pass layer for magnetic elements utilizing spin-transfer and an MRAM device using such magnetic elements | |
| US20090067232A1 (en) | Multiple Magneto-Resistance Devices Based on Doped Magnesium Oxide | |
| US20120063218A1 (en) | Spin-transfer torque magnetic random access memory with perpendicular magnetic anisotropy multilayers | |
| CN101064114A (en) | Magnetoresistive effect element and magnetic memory | |
| CN101048825A (en) | Reduced power magnetoresistive random access memory elements | |
| CN1405777A (en) | Multiple-location storage unit | |
| CN1947272A (en) | Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization | |
| CN1960018A (en) | Current vertical plane type gigantic magnetoresistance sensor | |
| CN1398434A (en) | Magnetore sistance effect element and magnetoresistance effect type magnetic head | |
| WO2011139235A1 (en) | A magnetoresistive device | |
| US8519496B2 (en) | Spin-transfer torque magnetic random access memory with multi-layered storage layer | |
| US8492860B2 (en) | Magnetic random access memory with switching assist layer | |
| CN1967891A (en) | Magnetic multilayer film with linear magnetoresistance effect and its application | |
| CN1487501A (en) | Magnetic detection sensor | |
| CN109994598B (en) | Spin orbit torque type magnetization rotating element and magnetoresistance effect element | |
| CN1182552C (en) | Magnetoresistive element and the use thereof as storage element in a storage cell array | |
| US8981506B1 (en) | Magnetic random access memory with switchable switching assist layer | |
| CN1363955A (en) | Semiconductor storaging device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |