CN1292461C - Automatic system and method for controlling laser energy - Google Patents
Automatic system and method for controlling laser energy Download PDFInfo
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- CN1292461C CN1292461C CN 03103335 CN03103335A CN1292461C CN 1292461 C CN1292461 C CN 1292461C CN 03103335 CN03103335 CN 03103335 CN 03103335 A CN03103335 A CN 03103335A CN 1292461 C CN1292461 C CN 1292461C
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Abstract
The present invention discloses an automatic control system for laser energy, and a method thereof. The method comprises the following steps: firstly, a substrate is provided; then, the hydrogen content value of the substrate is measured; afterwards, whether the hydrogen content value is smaller than a hydrogen content critical value or not is evaluated, if true, then send out an alarm signal, else, the thickness value of the substrate is measured; additionally, a contrast form of each thickness value of the substrate and each laser energy value is established; sequentially, a laser energy value corresponding to the thickness value is evaluated according to the contrast form; finally, corresponding laser energy is applied to the substrate according to the laser energy value. The present invention also provides the system for implementing the method.
Description
Technical field
The present invention relates to a kind of laser system and method, and be particularly related to a kind of laser energy System and method for of control automatically.
Background technology
In the existing method that drives liquid crystal indicator, that be mainly used to show as figure line is thin-film transistor (thin film transistor; TFT) mode, and at present common thin-film transistor mainly contains two kinds of amorphous silicon film transistor (a-Si:H TFT) and polycrystalline SiTFTs (poly-Si TFT).Polysilicon can be divided into high temperature polysilicon (high temperature poly silicon again; HTPS) with low temperature polycrystalline silicon (lowtemperature poly silicon; LTPS) two kinds.
Existing low-temperature polysilicon film transistor technology is to utilize excimer laser as thermal source, laser light is through behind the projection system, the equally distributed laser beam of meeting produce power, be projeced on the glass substrate of amorphous silicon structures, absorb the energy of excimer laser when the amorphous silicon structures glass substrate after, can be transformed into polysilicon structure, because of the entire process process all is to finish below 600 ℃, this process is called laser crystallization annealing (excimer laser annealing; ELA) technology.Therefore, laser crystallization for the low temperature polycrystalline be thin-film transistor technology key technology one.
Carrying out laser crystallization annealing (excimer laser; ELA) before the operation, must there be some to consider.The first, the quasi-molecule laser annealing crystal system is quite responsive to the thickness of amorphous silicon (a-Si), in case the varied in thickness of amorphous silicon surpasses 10 , the best crystallization energy of needed laser will be different, therefore, the laser energy that provided of laser crystallization operation must be adjusted along with the thickness of amorphous silicon.The second, amorphous silicon all contains part hydrogen usually, if not the hydrogen content of crystal silicon is too high, in the process of laser crystallization operation, has the quick-fried danger of hydrogen takes place, and therefore, in case find that the hydrogen content of amorphous silicon is too high, just must give up.
Yet, existing quasi-molecule laser annealing crystallizer and film thickness measuring instrument, hydrogen content measuring instrument are not integrated, amorphous silicon additionally must be done the hydrogen content measurement determine in safe range after, just carry out laser crystallization process, and can't adjust laser energy according to the thickness of amorphous silicon, provide best laser crystallization energy so can't definitely grasp the laser that is applied.
Summary of the invention
Therefore, in order to address the above problem, main purpose of the present invention is to provide a kind of laser energy automatic control system and method, carries out laser crystallization (ELA) operation applicable to the amorphous silicon with thin-film transistor (TFT).
One of purpose of the present invention is a kind of laser energy automatic control system and method, not only can measure the thickness and the hydrogen content of amorphous silicon by this system, and can carry out laser crystallization (ELA) program.
Two of purpose of the present invention is a kind of laser energy automatic control system and method, provides a suitable laser crystallization energy with the different amorphous silicon layer thickness of correspondence, makes amorphous silicon layer change crystallizing silicon layer fully into.
Three of purpose of the present invention is a kind of laser energy automatic control system and method, and the quick-fried phenomenon of hydrogen takes place when avoiding amorphous silicon layer to carry out laser crystallization (ELA) program.
Four of purpose of the present invention is a kind of laser energy automatic control system and method, to promote production capacity (throughput).
Principal character of the present invention is to utilize the hydrogen content of measuring amorphous silicon layer earlier whether to reach safety standard, the amorphous silicon layer of standard up to standard just can carry out laser crystallization (ELA) technology, and before carrying out laser crystallization (ELA) technology, measure the thickness of amorphous silicon layer earlier, amorphous silicon layer thickness of setting up in advance by contrast and laser energy contrast table are to determine suitable laser energy.
For obtaining above-mentioned purpose, the present invention proposes a kind of laser energy automatic control system, mainly comprises: a substrate supporting device, in order to carry a substrate; One measurement mechanism is in order to an one-tenth-value thickness 1/10 of measuring above-mentioned substrate and a hydrogen content value of above-mentioned substrate; One compare device, in order to a contrast table of a hydrogen content critical value and each substrate thickness value and each laser energy value to be provided, whether use the above-mentioned hydrogen content value of assessment greater than above-mentioned hydrogen content critical value, and contrast the pairing laser energy value of above-mentioned contrast table with above-mentioned one-tenth-value thickness 1/10; And a laser aid, with apply according to above-mentioned laser energy value a pair of stress light energy in above-mentioned substrate.
As previously mentioned, above-mentioned measurement mechanism can comprise an ellipsograph (ellipsometry).Above-mentioned hydrogen content value can be calculated out with being with (band gap) relation via extinction coefficient by an extinction coefficient (light extinction coefficient) of measuring above-mentioned substrate.Above-mentioned one-tenth-value thickness 1/10 can be by a refractive index (refractive index) of measuring above-mentioned substrate, and process Bragg diffraction law (Bragg diffraction law) is calculated and got.
As previously mentioned, above-mentioned compare device can comprise a computer.Above-mentioned compare device can comprise the method for above-mentioned hydrogen content value assessment: if above-mentioned hydrogen content value greater than above-mentioned hydrogen content standard value, is then sent an alarm signal; And, then notify above-mentioned measurement mechanism to measure the one-tenth-value thickness 1/10 of above-mentioned substrate if above-mentioned hydrogen content value is not more than above-mentioned hydrogen content critical value.In addition, above-mentioned compare device can comprise with the method that above-mentioned one-tenth-value thickness 1/10 contrasts the pairing laser energy value of above-mentioned contrast table: the one-tenth-value thickness 1/10 of the above-mentioned substrate that above-mentioned measurement mechanism is measured is sent to above-mentioned compare device; Contrast the pairing laser energy value of above-mentioned contrast table by the compare device with above-mentioned one-tenth-value thickness 1/10; And above-mentioned laser energy value is sent to above-mentioned laser aid.
According to the present invention, above-mentioned substrate comprises an amorphous silicon layer.The above-mentioned amorphous silicon layer that above-mentioned contrast table has various different-thickness by assessment is transformed into the needed laser energy of a crystallizing silicon layer fully and sets up.
The present invention proposes a kind of laser energy autocontrol method, comprising: a substrate is provided; Measure a hydrogen content value of above-mentioned substrate; Whether assess above-mentioned hydrogen content value less than a hydrogen content critical value; If above-mentioned hydrogen content greater than above-mentioned hydrogen content critical value, then sends an alarm signal; If above-mentioned hydrogen content is not more than above-mentioned hydrogen content critical value, then measure an one-tenth-value thickness 1/10 of above-mentioned substrate; Set up a contrast table of each substrate thickness value and each laser energy value; Assess a laser energy value of corresponding above-mentioned one-tenth-value thickness 1/10 by above-mentioned contrast table; And with above-mentioned laser energy value serve as according to apply a pair of stress light energy in above-mentioned substrate.
For obtaining above-mentioned purpose, the present invention proposes a kind of laser energy autocontrol method again, mainly comprises:
At first, provide a substrate in a substrate supporting device.Measure a hydrogen content value of above-mentioned substrate by an ellipsograph.Then, whether assess above-mentioned hydrogen content value less than a hydrogen content critical value by a compare device.Then, greater than above-mentioned critical value, then above-mentioned compare device sends an alarm signal as if above-mentioned hydrogen content.Then, if above-mentioned hydrogen content is not more than above-mentioned hydrogen content critical value, then measure an one-tenth-value thickness 1/10 of above-mentioned substrate by above-mentioned ellipsograph.In addition, set up a contrast table of each substrate thickness value and each laser energy value.Then, assess a laser energy value of corresponding above-mentioned one-tenth-value thickness 1/10 with above-mentioned compare device by above-mentioned contrast table.At last, by a laser aid according to above-mentioned laser energy value apply a pair of stress light in above-mentioned substrate.
As previously mentioned, above-mentioned substrate comprises an amorphous silicon layer.The above-mentioned amorphous silicon layer that above-mentioned contrast table has various different-thickness by assessment is transformed into the needed laser energy of a crystallizing silicon layer fully and sets up.The step that provides above-mentioned laser energy to put on above-mentioned substrate by a laser aid is to carry out a laser annealing crystallization process, so that above-mentioned amorphous silicon layer changes crystallizing silicon layer into.
According to the present invention, above-mentioned one-tenth-value thickness 1/10 is by a refractive index (refractiveindex) of measuring above-mentioned substrate, calculates and gets.
According to the present invention, above-mentioned hydrogen content value is calculated out with being with (band gap) relation via extinction coefficient by an extinction coefficient (lightextinction coefficient) of measuring above-mentioned substrate.
Description of drawings
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below:
Fig. 1 shows the block diagram according to a preferred embodiment of laser automatic control system of the present invention; And
Fig. 2 shows the flow chart according to a preferred embodiment of laser autocontrol method of the present invention.
Description of reference numerals in the accompanying drawing is as follows:
100～substrate supporting device; 102～measurement mechanism;
104～compare device; 106～laser aid;
The hydrogen content value of T1～substrate; T2～notice is measured the signal of thickness;
The one-tenth-value thickness 1/10 of T3～substrate; The comparing result of T4～laser energy value.
Embodiment
Below please cooperate flow chart, so that a preferred embodiment of the present invention to be described with reference to the laser autocontrol method of the block diagram of the laser automatic control system of figure 1 and Fig. 2.
The laser automatic control system
Please earlier with reference to Fig. 1, laser energy automatic control system of the present invention mainly comprises: a substrate supporting device 100, a measurement mechanism 102, a compare device 104 and a laser aid 106.
Substrate supporting device 100 can be used to carry a substrate that will impose laser treatment, for example: be applicable to the amorphous silicon layer of thin-film transistor (TFT), and substrate supporting device 100 can transmit substrate to measurement mechanism 102 and laser aid 106.
Measurement mechanism 102 is in order to an one-tenth-value thickness 1/10 measuring substrate and a hydrogen content value of substrate.Measurement mechanism 102 for example is an ellipsograph (ellipsometry), then can be by an extinction coefficient k (light extinction coefficient) who measures substrate, concern with being with (band gap) via extinction coefficient, just can extrapolate the hydrogen content value of substrate.In addition, the one-tenth-value thickness 1/10 of substrate can be by a refractive index n (refractive index) of measuring above-mentioned substrate, calculates and gets.In addition, substrate thickness also can be measured by general reflectometer (reflect meter) and obtain.
By " Optical properties of amorphous semiconductors " that Mr.Tauc J. (1974) is delivered in Amorphous and Liquid Semiconductors, we can obtain following formula:
A＝[1+2(ε
s/ε
0)]
2(ε
s/ε
0)
1/2/9(ε
s/ε
0)
2
Wherein, for a-Si, ε
s/ ε
0=12;
N
H: the hydrogen content of a-Si film;
B, C,
: constant;
α (ω): absorption coefficient (is a functional relation for light frequency);
Eg
OPT: the optical energy band of amorphous silicon layer;
ε
s: the dielectric constant of material;
ε
0: permittivity of vacuum.
Hydrogen content and absorption constant are a positive correlation, and the optical energy band of hydrogen content and material has certain relation, so can be measured the absorption constant of amorphous silicon layer by ellipsograph.Moreover, we can measure extinction coefficient k and refraction coefficient n and thickness by ellipsograph, and the pass of k and absorption constant is k=[λ α (ω)]/(4 π), so by ellipsograph, not only can measure the thickness of amorphous silicon layer, can calculate the hydrogen content of amorphous silicon layer again.
The compare device 104, can comprise a computer, except setting up a hydrogen content critical value in advance, also set up a contrast table of each substrate thickness value and each laser energy value in compare device 104 inside in advance.Has transmission line between measurement mechanism 102 and compare device 104, result that can measurement mechanism 102 is measured, for example: hydrogen content value T1 and substrate thickness T3, be sent to compare device 104 and handle, compare device 104 is sent to result T2, T4 respectively measurement mechanism 102 and laser aid 106 again.
Because the standard of the hydrogen content that different materials can allow is different, moreover, different laser equipments are also inequality at follow-up hydrogen content allowed in laser crystallization (ELA) program of mentioning, for example: when the CVD equipment of being produced with AKT company carries out laser crystallization to the material amorphous silicon layer, the hydrogen content of amorphous silicon layer can not be greater than 5～6% (hydrogen content critical values), otherwise can cause that hydrogen is quick-fried.Therefore, whether essential reference measure material of the setting of this hydrogen content critical value and laser equipment use substrate hydrogen content value that assessment measures greater than the hydrogen content critical value.If the substrate hydrogen content value that measures is greater than the hydrogen content critical value, then compare device 104 can send an alarm signal.If the substrate hydrogen content value that measures is not more than the hydrogen content critical value, then compare device 104 can send a signal, and notice measurement mechanism 102 is measured the one-tenth-value thickness 1/10 of substrate.
In addition, this contrast table of setting up in advance desires to reach the gained as a result of the needed different laser energy size of perfect condition after the laser treatment via the set material substrate that repeats the various different-thickness of laser testing, for example: the amorphous silicon layer of testing various different-thickness through laser crystallization (ELA) program after, desire to reach and be transformed into the needed laser energy of crystallizing silicon layer fully.The one-tenth-value thickness 1/10 of the substrate that 102 measurement mechanisms are measured can be sent to compare device 104, compare device 104 contrasts the pairing laser energy value of this contrast table with the substrate thickness value that measures, then, compare device's 104 meetings are sent to laser aid 106 with the comparing result of this laser energy value again.
Laser aid 106, receive the laser energy value that compare device 104 notified after, can with this laser energy value serve as according to apply a pair of stress light energy in substrate.
The path that on behalf of bogey 100, label A1, A2 transmit substrate, and the transfer path of label T1, T2, T3, T4 representative measurement and comparing result signal.
The laser autocontrol method
Please at first, in step S200, provide a substrate in substrate supporting device 100 simultaneously with reference to Fig. 1 and Fig. 2.Substrate supporting device 100 can transmit substrate to intrasystem each device.The preferred embodiment of this substrate is for being applicable to an amorphous silicon layer of thin-film transistor (TFT).
Then, in step S202, measure the hydrogen content of substrate.Transmit substrate to measurement mechanism 102, by measurement mechanism 102, for example with substrate supporting device 100: ellipsograph, the hydrogen content value of measurement substrate.Measurement result T1 with the hydrogen content value is sent to compare device 104 again.
Then, in step S204, whether assess above-mentioned hydrogen content value T1 less than a hydrogen content critical value by compare device 104.If the substrate hydrogen content value T1 that measures then carries out step S206 greater than the hydrogen content critical value.If the substrate hydrogen content value T1 that measures is not more than the hydrogen content standard value, then carry out step S208, S210 and S212.
Step S206 be meant if the substrate hydrogen content value T1 that measures greater than the hydrogen content critical value, then compare device 104 can send an alarm signal.Preferred embodiment is that the hydrogen content of amorphous silicon layer can not be greater than 5～6% (hydrogen content critical values), otherwise when with the CVD equipment that AKT company is produced the material amorphous silicon layer being carried out laser crystallization (ELA), the quick-fried phenomenon of hydrogen will take place.
Step S208 is meant if the substrate hydrogen content value T1 that measures is not more than the hydrogen content standard value, and then compare device 104 can send signal T2 notice measurement mechanism 102, makes measurement mechanism 102 measure the one-tenth-value thickness 1/10 T3 of substrate.
Then, in step S210, contrast laser energy value T4 by the substrate thickness value T3 that measures.The one-tenth-value thickness 1/10 T3 of the substrate that measurement mechanism 102 is measured can be resent to compare device 104, the pairing laser energy value of contrast table that compare device 104 sets up in advance with the substrate thickness value contrast that measures, determine the laser energy size that this substrate thickness is suitable for, preferred embodiment is to assess out the amorphous layer that desire will have predetermined thickness to change the needed suitable laser energy of crystallizing silicon layer fully into by laser crystallization (ELA) program, and is as shown in table 1.Then, compare device's 104 meetings are sent to laser aid 106 with the comparing result T4 of this laser energy value again.
Table 1
| Laser crystallization energy (mJ) | The thickness of amorphous silicon layer () |
| 200 | 100 |
| 210 | 200 |
| 220 | 300 |
| 250 | 400 |
| 270 | 500 |
| 290 | 600 |
| 310 | 700 |
| 350 | 800 |
| 400 | 900 |
| 460 | 1000 |
At last, in step S212, be foundation with the laser energy value T4 that contrasts, implement a laser ablation procedure.Substrate supporting device 100 is sent to substrate laser aid 106 again, and laser aid 106 is adjusted suitable operating parameter according to the laser energy value T4 that contrasts, for example: power, time ... Deng, apply corresponding laser in substrate, so that substrate is subjected to suitable laser ablation procedure, in order to avoid unnecessary output, to promote production capacity (throughput).Excellent embodiment makes the amorphous silicon layer with different-thickness all can carry out laser crystallization (ELA) process and change crystallizing silicon layer fully into optimal laser energy.
The preferred embodiment of the application of laser automatic control system of the present invention and method is the laser crystallization metallization processes of foregoing thin-film transistor silicon layer, yet, the present invention also can decide according to demand, is applied to any other laser technology according to its spirit, is not limited at this.
Though the present invention with preferred embodiment openly as above; but it is not in order to limit scope of the present invention; those skilled in the art are under the situation that does not break away from the spirit and scope of the present invention; can do various changes and retouching, so protection scope of the present invention should be with appended being as the criterion that claim was defined.
Claims (21)
1. laser energy automatic control system comprises:
One substrate supporting device is in order to carry a substrate;
One measurement mechanism is in order to an one-tenth-value thickness 1/10 of measuring above-mentioned substrate and a hydrogen content value of above-mentioned substrate;
One compare device, in order to a contrast table of a hydrogen content critical value and each substrate thickness value and each laser energy value to be provided, whether use the above-mentioned hydrogen content value of assessment greater than above-mentioned hydrogen content standard value, and contrast the pairing laser energy value of above-mentioned contrast table with above-mentioned one-tenth-value thickness 1/10; And
One laser aid, in order to apply according to above-mentioned laser energy value a pair of stress light energy in above-mentioned substrate.
2. laser energy automatic control system as claimed in claim 1, wherein above-mentioned measurement mechanism comprises an ellipsograph.
3. laser energy automatic control system as claimed in claim 1, wherein above-mentioned compare device comprises a computer.
4. laser energy automatic control system as claimed in claim 1, the method that wherein above-mentioned compare device assesses above-mentioned hydrogen content value comprises:
If above-mentioned hydrogen content value greater than above-mentioned hydrogen content standard value, is then sent an alarm signal; And
If above-mentioned hydrogen content value is not more than above-mentioned hydrogen content standard value, then notify above-mentioned measurement mechanism to measure the one-tenth-value thickness 1/10 of above-mentioned substrate.
5. laser energy automatic control system as claimed in claim 1, wherein above-mentioned compare device comprises with the method that above-mentioned one-tenth-value thickness 1/10 contrasts the pairing laser energy value of above-mentioned contrast table:
The one-tenth-value thickness 1/10 of the above-mentioned substrate that above-mentioned measurement mechanism is measured is sent to above-mentioned compare device;
Contrast the pairing laser energy value of above-mentioned contrast table by the compare device with above-mentioned one-tenth-value thickness 1/10; And
Above-mentioned laser energy value is sent to above-mentioned laser aid.
6. laser energy automatic control system as claimed in claim 1, wherein above-mentioned hydrogen content value are calculated out with being with relation via extinction coefficient by an extinction coefficient of measuring above-mentioned substrate.
7. laser energy automatic control system as claimed in claim 1, wherein above-mentioned one-tenth-value thickness 1/10 be by a refractive index of measuring above-mentioned substrate, calculates and get.
8. laser energy automatic control system as claimed in claim 1, wherein above-mentioned substrate comprises an amorphous silicon layer.
9. laser energy automatic control system as claimed in claim 8, the above-mentioned amorphous silicon layer that wherein above-mentioned contrast table has various different-thickness by assessment is transformed into the needed laser energy of a crystallizing silicon layer fully and sets up.
10. laser energy autocontrol method comprises:
One substrate is provided;
Measure a hydrogen content value of above-mentioned substrate;
Whether assess above-mentioned hydrogen content value less than a hydrogen content critical value;
If above-mentioned hydrogen content greater than above-mentioned hydrogen content critical value, then sends an alarm signal;
If above-mentioned hydrogen content is not more than above-mentioned hydrogen content critical value, then measure an one-tenth-value thickness 1/10 of above-mentioned substrate;
Set up a contrast table of each substrate thickness value and each laser energy value;
Assess a laser energy value of corresponding above-mentioned one-tenth-value thickness 1/10 by above-mentioned contrast table; And
With above-mentioned laser energy value serve as according to apply a pair of stress light energy in above-mentioned substrate.
11. laser energy autocontrol method as claimed in claim 10, wherein above-mentioned one-tenth-value thickness 1/10 is measured a refractive index of above-mentioned substrate by a reflectometer, calculates and gets.
12. laser energy autocontrol method as claimed in claim 10, wherein above-mentioned one-tenth-value thickness 1/10 is measured a refractive index of above-mentioned substrate by an ellipsograph, calculates and gets.
13. laser energy autocontrol method as claimed in claim 10, wherein above-mentioned hydrogen content value is measured an extinction coefficient of above-mentioned substrate by an ellipsograph, concerns and calculates out with being with via extinction coefficient.
14. laser energy autocontrol method as claimed in claim 10, wherein above-mentioned substrate comprises an amorphous silicon layer.
15. laser energy autocontrol method as claimed in claim 14, the above-mentioned amorphous silicon layer that wherein above-mentioned contrast table has various different-thickness by assessment is transformed into the needed laser energy of a crystallizing silicon layer fully and sets up.
16. a laser energy autocontrol method comprises:
Provide a substrate in a substrate supporting device;
Measure a hydrogen content value of above-mentioned substrate by an ellipsograph;
Whether assess above-mentioned hydrogen content value less than a hydrogen content critical value by a compare device;
If above-mentioned hydrogen content is greater than above-mentioned critical value, then above-mentioned compare device sends an alarm signal;
If above-mentioned hydrogen content is not more than above-mentioned hydrogen content critical value, then measure an one-tenth-value thickness 1/10 of above-mentioned substrate by above-mentioned ellipsograph;
Set up a contrast table of each substrate thickness value and each laser energy value;
Assess a laser energy value of corresponding above-mentioned one-tenth-value thickness 1/10 with above-mentioned compare device by above-mentioned contrast table;
By a laser aid according to above-mentioned laser energy value apply a pair of stress light energy in above-mentioned substrate.
17. laser energy autocontrol method as claimed in claim 16, wherein above-mentioned one-tenth-value thickness 1/10 by a refractive index of measuring above-mentioned substrate, are calculated again and are got.
18. laser energy autocontrol method as claimed in claim 16, wherein above-mentioned hydrogen content value by an extinction coefficient of measuring above-mentioned substrate, are calculated out with being with relation via extinction coefficient.
19. laser energy autocontrol method as claimed in claim 16, wherein above-mentioned substrate comprises an amorphous silicon layer.
20. laser energy autocontrol method as claimed in claim 19, the above-mentioned amorphous silicon layer that wherein above-mentioned contrast table has various different-thickness by assessment is transformed into the needed laser energy of a crystallizing silicon layer fully and sets up.
21. laser energy autocontrol method as claimed in claim 19, wherein the step that provides above-mentioned laser energy to put on above-mentioned substrate by a laser aid is to carry out a laser annealing crystallization process, so that above-mentioned amorphous silicon layer changes crystallizing silicon layer into.
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| CN107275185A (en) * | 2017-04-24 | 2017-10-20 | 昆山国显光电有限公司 | Laser anneal device and its annealing process |
| CN112837998B (en) * | 2021-02-05 | 2023-08-25 | 福建晶安光电有限公司 | Substrate processing device |
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