CN1289959C - Contrast and reaction speed promoted multi-domain perpendicular direction matching transistor liquid crystal display - Google Patents
Contrast and reaction speed promoted multi-domain perpendicular direction matching transistor liquid crystal display Download PDFInfo
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- CN1289959C CN1289959C CN 200310115706 CN200310115706A CN1289959C CN 1289959 C CN1289959 C CN 1289959C CN 200310115706 CN200310115706 CN 200310115706 CN 200310115706 A CN200310115706 A CN 200310115706A CN 1289959 C CN1289959 C CN 1289959C
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Abstract
The present invention relates to a multi-domain vertical alignment transistor liquid crystal display with improved contrast and reaction speed, particularly to a reflecting type structure, or a semi-penetration and semi-reflecting type thin film transistor liquid crystal display(TFT-LCD) structure with a reflecting domain in a multi-domain vertical alignment mode. As a transparent flat layer and a transparent electrode pattern which is provided with radial fine slits are orderly arranged on a whole sheet of a reflecting plate in a raised point structure, and a hole or an insulating protrusion is arranged on an upper base plate at the point of the center of a transparent electrode corresponding to the position of the transparent electrode pattern, a liquid crystal layer of a vertical alignment reflecting type TFT-LCD, or a reflecting domain of the semi-penetration and semi-reflecting type TFT-LCD forms multiple domains, and the arrangement condition of liquid crystal molecules in the liquid crystal layer or the reflecting domain is stable. Thereby, the liquid crystal display has broad visual angles, and the contrast effect is simultaneously increased.
Description
Technical field
The present invention has a multi-zone vertical alignment nematic pattern (Multi-Domain VerticalAlignment Mode about a kind of; MVA) reflective Thin Film Transistor-LCD and the semi-penetration, semi-reflective Thin Film Transistor-LCD that has the MVA pattern in the echo area, especially refer to a kind of at reflective Thin Film Transistor-LCD with in the echo area of semi-penetration, semi-reflective Thin Film Transistor-LCD, formation is produced on the structure of the transparent electrode pattern with radial slots (fine slit) on the transparent flatness layer, to promote contrast and reaction velocity.
Background technology
Quick progress along with the thin film transistor (TFT) manufacturing technology, possessed the LCD of advantages such as frivolous, power saving, radiationless line, a large amount of is applied in the various electronic products such as counter, personal digital aid (PDA) (PDA), wrist-watch, mobile computer, digital camera and mobile phone.Add the positive input research and development of industry and adopt the production equipment that maximizes, the production cost of LCD is constantly descended, more make the demand of LCD heighten.
Thin Film Transistor-LCD (TFT-LCD) is to utilize the characteristic of liquid crystal molecule rotation polar biased light direction and birefraction to reach the effect that shows light and shade, this characteristic is relevant with the angle of incident light, therefore LCD just has the problem at visual angle in essence, along with audience's angle difference different display qualities is arranged, the visual angle big contrast of seeing of healing is lower, along with the development that LCD maximizes, promote each visual angle contrast and then more seem important with color homogeneity.
For the further application and the quality of expansion LCD, the research emphasis of current LCD, the reaction time that mainly concentrates on augmentation visual angle how and shorten screen.Desire to achieve the above object, prior art has been developed multiple wide viewing angle technology, for example transverse electric field handoff technique (In-PlaneSwitching; IPS), boundary electric field handoff technique (Fringe Field Switching; FFS) and multi-zone vertical alignment nematic technology (Multi-Domain Vertical Alignment; MVA).
But, above-mentioned wide viewing angle technology still is only limited to and is applied in penetration (transmissive) TFT-LCD.
Summary of the invention
A purpose of the present invention is to provide a kind of semi-penetration, semi-reflective Thin Film Transistor-LCD (transflective TFT-LCD) that has the reflective Thin Film Transistor-LCD (reflective TFT-LCD) of multi-zone vertical alignment nematic pattern (MVA) and have the MVA pattern in the echo area.By on reflecting plate, successively making a transparent flatness layer and a transparent electrode pattern in regular turn, make the echo area of this reflective TFT-LCD and this semi-penetration, semi-reflective TFT-LCD form multiple zone and Liquid Crystal Molecules Alignment situation wherein is stable, so that improve gray-scale inversion and colour cast problem, increase its visual angle, and the liquid crystal when making dark attitude has good vertical orientation, and reduces light leak and increase contrast.
The present invention discloses a kind of reflective Thin Film Transistor-LCD, comprise that one contains the transparent lower substrate of thin film transistor (TFT), be positioned at this transparent insulating layer above transparent lower substrate, wherein the upper surface of this transparent insulating layer has a plurality of salient points (bumps), be made in a reflecting plate of the upper surface of this transparent insulating layer, be made in a transparent flatness layer of the upper surface of this reflecting plate, be made at least one transparent electrode pattern of the upper surface of this transparent flatness layer, one has the transparent upper of color filter layers, be positioned at a transparent upper electrode of the color filter layers lower surface of this transparent upper, wherein under preferable situation, this transparent upper electrode has the projection of making non-conductive material on a corresponding hole or the electrode at this place in the position that corresponds to this at least one transparent electrode pattern, and the liquid crystal layer between this transparent upper electrode and this at least one transparent electrode pattern.When applying a voltage to this LCD, the hole or the projection of this at least one transparent electrode pattern and this transparent upper electrode, can make the liquid crystal molecule of this liquid crystal layer produce the stable multi-zone vertical alignment nematic pattern of arrangement situation, and this transparent flatness layer can intercept the influence of these a plurality of salient points to the liquid crystal molecule proper alignment of this liquid crystal layer fully, liquid crystal when making dark attitude has good vertical orientation, and reduces light leak and increase contrast.
Moreover the present invention also discloses a kind of semi-penetration, semi-reflective Thin Film Transistor-LCD, has an echo area and a penetrating region.This semi-penetration, semi-reflective Thin Film Transistor-LCD comprises that one contains the transparent lower substrate of thin film transistor (TFT), be positioned at this transparent insulating layer above transparent lower substrate of this echo area, wherein the upper surface of this transparent insulating layer has a plurality of salient points (bumps), be made in a reflecting plate of the upper surface of this transparent insulating layer, be made in a transparent flatness layer of the upper surface of this reflecting plate, be made at least one transparent electrode pattern of the upper surface of this transparent flatness layer, be positioned at a top transparent bottom electrode of this transparent lower substrate of this penetrating region, wherein this transparent bottom electrode electrically connects with this at least one transparent electrode pattern, one has the transparent upper of color filter layers, be positioned at a transparent upper electrode of the color filter layers lower surface of this transparent upper, wherein under preferable situation, this transparent upper electrode has the projection of making non-conductive material on a corresponding hole or the electrode at this place in the position that corresponds to this at least one transparent electrode pattern, and the liquid crystal layer between this transparent upper electrode and this at least one transparent electrode pattern.When applying a voltage to this LCD, the hole or the projection of this at least one transparent electrode pattern and this transparent upper electrode, can make the liquid crystal molecule of this liquid crystal layer produce the stable multi-zone vertical alignment nematic pattern of arrangement situation, and this transparent flatness layer can intercept the influence of these a plurality of salient points to the liquid crystal molecule proper alignment of this liquid crystal layer fully, liquid crystal when making dark attitude has good vertical orientation, and reduces light leak and increase contrast.
Description of drawings
Figure 1A one has the schematic top plan view of an embodiment of the transparent electrode pattern of radial slots (fine slit);
Figure 1B is the vertical view in the upper substrate transparency electrode of the transparent electrode pattern position that corresponds to Figure 1A;
Fig. 1 C is the vertical view after the transparent electrode pattern combination of the upper substrate transparency electrode of Figure 1B and Figure 1A;
Fig. 2 is the section of structure with semi-penetration, semi-reflective TFT-LCD unit picture element of transparent electrode pattern of the present invention;
The vertical view that Fig. 3 has two transparent electrode pattern structures for semi-penetration, semi-reflective of the present invention TFT-LCD unit picture element, and
Fig. 4 is the section of structure of another embodiment of the semi-penetration, semi-reflective TFT-LCD unit picture element with transparent electrode pattern of the present invention.
The figure number explanation
Upper substrate transparency electrode 21 holes or projection 211
Echo area B salient point 11
Signal wire 200 TFT 16
Storage capacitors 17 transparent electrode layers 12
Reflecting plate 18 holes 22 '
Embodiment
But the invention provides the reflective LCD Structure of thin film transistor of vertical orientation at a kind of augmentation visual angle, but and in the structure at the augmentation visual angle, echo area of vertical orientation semi-penetration, semi-reflective Thin Film Transistor-LCD.Wherein, a transparent flatness layer is made in utilization earlier on have the full wafer reflecting plate of bump structure, on this transparent flatness layer, make transparent electrode pattern again with radial slots (fine slit), and the projection (protrusion) that forms the non-conductive material of making on a hole (hole) or the electrode in the centre of the upper substrate transparency electrode that corresponds to this transparent electrode pattern position at this place, the liquid crystal layer that not only can make this reflective TFT-LCD or make the echo area of this semi-penetration, semi-reflective TFT-LCD like this, form the stable multiple zone of Liquid Crystal Molecules Alignment situation, and make LCD have more broad visual angle, and can promote contrast and reaction velocity.Shown in relevant of the present invention being described in detail as follows.
Embodiment 1
Figure 1A shows that the present invention is on the echo area structure of reflective TFT-LCD structure of vertical orientation and semi-penetration, semi-reflective TFT-LCD, use the vertical view of an embodiment with transparent electrode pattern of radial slots (fine slit), wherein this transparent electrode pattern 13 can be a tin indium oxide (ITO, Indium Tin Oxide) material constitutes, its slit 131 can form via etching, and slit 131 width and spacings each other own are about 3-5 μ m.Figure 1B is presented at the vertical view of the upper substrate transparency electrode that corresponds to this transparent electrode pattern position, wherein form and make projection (protrusion) 211 on a hole or the electrode at this place in the centre of this transparency electrode 21, and this transparency electrode 21 is generally the ITO electrode, and this projection is to be made of a kind of non-conductive material.Fig. 1 C is the vertical view after this upper substrate transparency electrode 21 makes up with this transparent electrode pattern 13.
By Fig. 1 C as can be known, owing to above the central authorities of this transparent electrode pattern 13, have a hole or projection, and around the outer rim of this transparent electrode pattern 13, has an outstanding radial slots 131, when the pixel electrode that applies a voltage to this LCD (being this transparent electrode pattern 13 herein), with regard to single transparent electrode pattern 13, the liquid crystal molecule of contiguous these slits 131 can be arranged along with the direction of these slits 131, and all liquid crystal molecules can be toppled over towards the direction of central cavity or projection 211, and produce the effect that quadruple is divided the territory, reach the purpose at augmentation visual angle.And, liquid crystal molecule around the outer rim of contiguous this transparent electrode pattern 13 can be subjected to the influence of slit 131 arrangements and topple over marshalling, and it is more little more to be subjected to the influence that slit 131 arranges near the liquid crystal molecule of these transparent electrode pattern 13 inner edges, so just form a layer continuum (continuous domain) of toppling over gradually, and be applicable to very much reflective TFT-LCD and semi-penetration, semi-reflective TFT-LCD.
Below be that example illustrates the present invention with the structure of vertical orientation semi-penetration, semi-reflective TFT-LCD.
Fig. 2 is for showing the cross section structure with semi-penetration, semi-reflective TFT-LCD unit picture element of transparent electrode pattern of the present invention, wherein this LCD comprises and is used for making the transistorized lower glass substrate 10 of TFT, and the top glass substrate 20 that is used for making colored filter.Have a liquid crystal layer 15 20,10 of upper and lower glass substrates,, and change the light angle of in penetrating region A and echo area B, passing through this liquid crystal layer 15 so that change the orientation and the arrangement mode of liquid crystal molecule according to the voltage that applies.
Formation one has the transparent organic layer of a plurality of salient points (bumps) 11 on the lower glass substrate 10 of echo area B, afterwards, and the metal level of deposition whole piece, as reflecting plate 18, and preferable situation is that this reflecting plate 18 is floated (floating), does not promptly connect voltage.And because this reflecting plate 18 is produced on this transparent organic layer with a plurality of salient points 11, the surface of this reflecting plate 18 is also uneven.For making arrangement not be subjected to the influence on these reflecting plate 18 rough surfaces fully at the liquid crystal of this liquid crystal layer 15, and it is more neat to arrange ground, before the electrode of this transparent electrode pattern 13 that forms shown in Figure 1A as echo area B control liquid crystal arrangement, make a transparent flatness layer 19 earlier in the upper surface of this reflecting plate 18, this transparent flatness layer 19 can be a transparent organic layer.
Then, deposit a transparent electrode layer 12 (for example ITO layer) as pixel electrode, and make the transparent electrode layer 12 of echo area B produce this transparent electrode pattern with radial slots (not shown) 13 via etching at penetrating region A and echo area B.Centre in the transparency electrode 21 (ITO electrode) of the top glass substrate 20 that corresponds to these transparent electrode pattern 13 positions then forms a projection (protrusion) 22.So, just be formed on the semi-penetration, semi-reflective TFT-LCD that the echo area has the multi-zone vertical alignment nematic mode configuration.When applying a voltage to the pixel electrode of this LCD, just produce quadruple branch territory and be a kind of pattern of continuum, and, because the metallic reflection plate 18 of these transparent electrode pattern 13 belows is whole pieces, by the light in the gap between these transparent electrode pattern 13 slits, still can be reflected and utilize.Moreover, because this transparent electrode pattern 13 is produced on this transparent flatness layer 19, the arrangement of the liquid crystal of this liquid crystal layer 15 is not subjected to the influence of these reflecting plate 18 following rough salient points 11 fully, therefore make the liquid crystal when dark attitude have extremely good vertical orientation to arrange, and reduce light leak and increase contrast effect simultaneously.
In the echo area of semi-penetration, semi-reflective of the present invention TFT-LCD unit picture element, can form more than one transparent electrode pattern 13 structures.The vertical view that Fig. 3 has two transparent electrode pattern structures for demonstration semi-penetration, semi-reflective of the present invention TFT-LCD unit picture element, wherein sweep trace 100 and signal wire 200 intersect vertically, in this unit picture element, have a switch module TFT16 and a storage capacitors 17, in the B of echo area, the below has whole piece and is produced on metallic reflection plate 18 on these salient points 11, and be produced on two transparent electrode patterns 13 on this transparent flatness layer 19, and produce the effect that eightfold is divided the territory, reach the purpose at augmentation visual angle.And each transparent electrode pattern 13 formed multi-zone vertical alignment nematic pattern is a kind of continuums.
Embodiment 2
Please refer to Fig. 4, it shows the cross section structure of another embodiment of the semi-penetration, semi-reflective TFT-LCD unit picture element with transparent electrode pattern of the present invention.The present embodiment and the first embodiment difference are; centre in the transparency electrode 21 of the top glass substrate 20 that corresponds to these transparent electrode pattern 13 positions; then form a hole 22 '; and be to prevent that the colorized optical filtering sheet material under top glass substrate 20 from leaking to this liquid crystal layer 15 by this hole 22 ', can between this transparency electrode 21 and this colored filter (not shown), form a transparency protected tunic (not shown).Thus, also be formed on the semi-penetration, semi-reflective TFT-LCD that the echo area has the multi-zone vertical alignment nematic mode configuration, when applying a voltage to the pixel electrode of this LCD, just produce quadruple branch territory and be a kind of pattern of continuum.
Number, the size of the slit of the employed in the present invention transparent electrode pattern with radial slots, position, angle and shape are set, all visual actual needs is done suitable variation.
The above utilizes preferred embodiment to describe the present invention in detail, but not limits the scope of the invention, and know this type of skill personage and all can understand, suitably do slightly change and adjustment, will not lose main idea of the present invention place, also do not break away from the spirit and scope of the present invention.
Claims (10)
1, a kind of reflective transistor liquid crystal display (TFT-LCD) is characterized in that, comprising:
One contains the transparent lower substrate of thin film transistor (TFT);
One transparent insulating layer, it is positioned at this above transparent lower substrate, and the upper surface of this transparent insulating layer has a plurality of salient points;
One reflecting plate, it is made in the upper surface of this transparent insulating layer;
One transparent flatness layer, it is made in the upper surface of this reflecting plate;
At least one transparent electrode pattern, it is made in the upper surface of this transparent flatness layer, with the form setting of radial slots, so that when applying a voltage to this LCD, is used for producing the liquid crystal distribution of multi-zone vertical alignment nematic pattern;
One has the transparent upper of color filter layers;
One transparent upper electrode is positioned at the color filter layers lower surface of this transparent upper; And
One liquid crystal layer is between this transparent upper electrode and this at least one transparent electrode pattern.
2, reflective transistor liquid crystal display (TFT-LCD) as claimed in claim 1 is characterized in that, this transparent electrode pattern is one to have the indium-tin oxide electrode of radial slots.
3, reflective transistor liquid crystal display (TFT-LCD) as claimed in claim 1 is characterized in that, this transparent upper electrode has a corresponding electrode hole in the position that corresponds to this at least one transparent electrode pattern.
4, reflective transistor liquid crystal display (TFT-LCD) as claimed in claim 1 is characterized in that, this transparent upper electrode has the projection of a corresponding non-conductive material in the position that corresponds to this at least one transparent electrode pattern.
5, a kind of semi-penetration, semi-reflective transistor liquid crystal display (TFT-LCD) is characterized in that, it is divided into an echo area and a penetrating region and comprises:
One contains the transparent lower substrate of thin film transistor (TFT);
One transparent insulating layer, its be positioned at this echo area this above transparent lower substrate, and the upper surface of this transparent insulating layer has a plurality of salient points;
One reflecting plate, it is made in the upper surface of this transparent insulating layer;
One transparent flatness layer, it is made in the upper surface of this reflecting plate;
At least one transparent electrode pattern, it is made in the upper surface of this transparent flatness layer, with the form setting of radial slots, so that when applying a voltage to this LCD, is used for producing the liquid crystal distribution of multi-zone vertical alignment nematic pattern;
One transparent bottom electrode, its be positioned at this penetrating region this transparent lower substrate above, and electrically connect with this at least one transparent electrode pattern;
One has the transparent upper of color filter layers;
One transparent upper electrode is positioned at the color filter layers lower surface of this transparent upper; And
One liquid crystal layer is between this transparent upper electrode and this at least one transparent electrode pattern.
6, semi-penetration, semi-reflective transistor liquid crystal display (TFT-LCD) as claimed in claim 5 is characterized in that, this transparent electrode pattern is one to have the indium-tin oxide electrode of radial slots.
7, semi-penetration, semi-reflective transistor liquid crystal display (TFT-LCD) as claimed in claim 5 is characterized in that, this transparent upper electrode has a corresponding hole in the position that corresponds to this at least one transparent electrode pattern.
8, semi-penetration, semi-reflective transistor liquid crystal display (TFT-LCD) as claimed in claim 7 is characterized in that, the hole of this transparent upper electrode is in the position that corresponds to this at least one transparent electrode pattern centre.
9, semi-penetration, semi-reflective transistor liquid crystal display (TFT-LCD) as claimed in claim 5 is characterized in that, this transparent upper electrode has the projection of a corresponding non-conductive material in the position that corresponds to this at least one transparent electrode pattern.
10, semi-penetration, semi-reflective transistor liquid crystal display (TFT-LCD) as claimed in claim 9 is characterized in that, the projection of this transparent upper electrode is in the position that corresponds to this at least one transparent electrode pattern centre.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200310115706 CN1289959C (en) | 2003-11-24 | 2003-11-24 | Contrast and reaction speed promoted multi-domain perpendicular direction matching transistor liquid crystal display |
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| CN 200310115706 CN1289959C (en) | 2003-11-24 | 2003-11-24 | Contrast and reaction speed promoted multi-domain perpendicular direction matching transistor liquid crystal display |
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| CN1289959C true CN1289959C (en) | 2006-12-13 |
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100353228C (en) * | 2004-11-26 | 2007-12-05 | 友达光电股份有限公司 | Multifield vertical directional liquid crystal display panel |
| CN100373243C (en) * | 2005-07-22 | 2008-03-05 | 友达光电股份有限公司 | Electrode structure and half through half reflect liquid crystal display unit using same |
| CN101059612B (en) * | 2006-04-19 | 2012-04-18 | 奇美电子股份有限公司 | Semi-penetration semi-reflection type liquid crystal panel and positive element array substrate production method |
| CN100435011C (en) * | 2006-11-01 | 2008-11-19 | 友达光电股份有限公司 | Multiple domain vertical alignment pixel and its producing method |
| TWI439758B (en) | 2007-02-16 | 2014-06-01 | Au Optronics Corp | Transflective display and fabrication method thereof |
| CN102081267A (en) * | 2007-03-02 | 2011-06-01 | 友达光电股份有限公司 | Transflective display and manufacturing method thereof |
| CN101581851B (en) * | 2008-05-16 | 2011-05-18 | 群康科技(深圳)有限公司 | Transflective liquid crystal panel and transflective liquid crystal display device |
| CN102566132A (en) * | 2010-12-08 | 2012-07-11 | 上海天马微电子有限公司 | Semi-reflecting semi-permeable thin film transistor liquid crystal display |
| CN105785631A (en) * | 2014-12-24 | 2016-07-20 | 群创光电股份有限公司 | Display device |
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