CN1288592C - Toutch and nou-toutch type working-mode changing-over method in double interface card - Google Patents

Toutch and nou-toutch type working-mode changing-over method in double interface card Download PDF

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Publication number
CN1288592C
CN1288592C CN 03142215 CN03142215A CN1288592C CN 1288592 C CN1288592 C CN 1288592C CN 03142215 CN03142215 CN 03142215 CN 03142215 A CN03142215 A CN 03142215A CN 1288592 C CN1288592 C CN 1288592C
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contact
mode
vcc
contactless
interface card
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CN1581220A (en
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邱炳森
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Shanghai Huahong Integrated Circuit Co Ltd
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Shanghai Huahong Integrated Circuit Co Ltd
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Abstract

The present invention discloses a method for switching a double-interface card between a contact type work pattern and a non-contact type work pattern, which aims to provide a method for switching a double-interface card between a contact type work pattern and a non-contact type work pattern in a seamless transition mode. In the present invention, the default state of a system is a non-contact type work pattern, but the priority of a contact type work pattern is higher than that of the non-contact type work pattern. When contact type active information and non-contact type active information appear simultaneously, the contact type work pattern is activated, but the non-contact type work pattern is shielded. The non-contact type work pattern can be interrupted by the contact type work pattern in the states of activation or maintenance, but the contact type work pattern can not be interrupted by the non-contact type work pattern in the states of activation or maintenance. The present invention is suitable for the field of intelligent cards.

Description

Contact and contactless Working mode switching method in the double-interface card
Technical field
The present invention relates to the Working mode switching method in a kind of field of intelligent cards, in particular, relate to the changing method of contact and contactless mode of operation in the double-interface card.
Background technology
Current, bring into use double-interface card (Dual Interface SmartCard) in international field of intelligent cards, it mainly is that two kinds of modes with extraneous interface are provided on a card simultaneously: contact and contactless is also referred to as " double nip card " usually.Double-interface card has been concentrated the contact card in the independent use and the advantage of non-contact card, and more perfect function is a kind of multifunction card.
The profile and the Contact Type Ic Card of double-interface card are alike, and the surface is by the hard contact that meets international standard ISO7816, and inner structure is then similar to non-contact IC card, and the module of antenna and chip is arranged, and meets the ISO14443 standard.The card internal storage is shared in the shared central processing unit CPU management of double-interface card.The Dalian " jewel card " of using the card system distribution of city, typical Dalian with the most successful domestic double-interface card is example, it adopts a chip, a CPU, the all resources of chip are all shared, has only a COS, can visit identical storage area and carry out identical operations by contact interface and noncontact interface, its contact interface meets ISO/IEC7816 fully, and the noncontact interface meets ISO/IEC14443.
But still there are many technical matterss in actual use in above-mentioned double-interface card, especially in the switching of contact mode of operation and contactless mode of operation, still has following problem:
1. cause short circuit easily: when double-interface card is operated in contactless working method, the voltage that the RF module produces is applied directly on the voltage contact of contact, and double-interface card is when being operated in contactless working method, the contact of contact is to expose outside, in case voltage contact and earthing contact are switched on, will cause the chip short circuit so;
2. chip operation is in 3V/5V mixed-voltage environment: the RF commutating voltage under the contactless working method is approximately 3V, and the contact supply voltage is 5V (ISO 7816 category-A interfaces), like this, the operating voltage of the main part of chip is 3V a little while, be again 5V a little while, voltage swing is too big, diminishes the stability and the serviceable life of chip; In addition, if produce the noncontact field intensity, because the contact supply voltage is 5V, and the voltage that provides for chip by rectifying and wave-filtering from the energy that antenna is coupled to is about 3V to chip operation when the contact mode, and this potential difference (PD) can cause electric current to pour in down a chimney the module into RF;
3. poor anti jamming capability: double-interface card in the course of the work, there are various interference, and when double-interface card is operated in the contact working method, the RF module might be subjected to electromagnetic interference (EMI) and produce false signal, existing changing method is not often owing to handle or deal with improperly various interference, thereby causes the mistake of mode of operation to be switched.
The drawback that deficiency on these prior aries has caused double-interface IC card in use to be lacked in poor stability, serviceable life.
Summary of the invention
The objective of the invention is to above-mentioned deficiency, the changing method of contact and contactless mode of operation in a kind of double-interface card is provided, two kinds of mode of operations of double-interface card can correctly be changed, realize seamless transitions at prior art.
Above-mentioned purpose of the present invention is achieved through the following technical solutions: the default conditions of system are contactless mode of operation, but the right of priority of contact mode of operation is higher than contactless mode of operation; When contact active information and contactless active information occurred simultaneously, the contact mode of operation was activated, the then conductively-closed of contactless mode of operation; Contactless mode of operation can be touched the formula mode of operation and interrupt when activating or keep, the contact mode of operation then cannot be interrupted by contactless mode of operation when activating or keep.
For realizing the changing method of above-mentioned contact and contactless mode of operation, the present invention is switched by power supply and the signal switching constitutes; Power supply switches main by mimic channel, with voltage transitions as means, thereby solved " electric current pours in down a chimney " problem of RF module, make the main part of chip have unique operating voltage again simultaneously; Simultaneously, also adopted " unidirectional isolation " technology, the voltage VDD that has avoided the RF module to produce is applied directly on the VCC contact of contact and the short circuit phenomenon that causes easily; In signal switches, fully adopted the pattern detection circuit of interference source character, improved the robustness of mode switch, simultaneously, the special processing of neutral signal has been improved the determinacy of mode switch on the one hand, reduced the power consumption of circuit on the other hand again.
Compare with prior art, the present invention has following beneficial effect: the switching problem that has successfully solved contact and contactless mode of operation in the double-interface card, no matter use contactless or the Contact Type Ic Card read-write equipment, can carry out identical operations to double-interface card easily, can realize the seamless transitions of contact system and contactless system.
Description of drawings
Fig. 1 is the circuit theory diagrams of double-interface card Working mode switching method of the present invention.
Among the figure: T1, T3, T4, T5, T6 are N channel enhancement metal-oxide-semiconductor
T2 is the N channel enhancement metal-oxide-semiconductor of diode connection
D1, D2 are unidirectional level translator
D3 is the two-way level converting device
Embodiment
Below in conjunction with drawings and Examples the present invention is further described.
As shown in Figure 1, the significance signal of top-level module is as shown in table 1.
The significance signal that table 1 double-interface card mode of operation is switched
Signal Direction Meaning Remarks
VCC INOUT Contact contact supply voltage 5V:A class 7816 3V:B classes 7816
IO INOUT Contact contact data line
PAD_RST IN Contact contact reset signal
POW_RST IN RF circuit power-on reset signal
RF_CLK IN The RF circuit clock signal 13.56MHz
VDD INOUT RF circuit power voltage 3V
MODE OUT Two interfaces mode of operation indicator signal 0: contact 1: contactless
SYS_CLK OUT System clock Contact: 5.00MHz is contactless: 6.78MHz
SYS_RST OUT Systematic reset signal
SYS_IO INOUT Through the contact contact data line after the level conversion
The changing method of double-interface card contact provided by the present invention and contactless mode of operation can be divided into power supply and switch and the signal switching.
1. power supply switches
Power supply switches and mainly to be undertaken by mimic channel, and it comprises: the N channel enhancement metal-oxide-semiconductor T2 of voltage regulator (VoltageRegulator), high voltage detector (High Voltage Detector), N channel enhancement metal-oxide-semiconductor T1, diode connection, two unidirectional level translator D1, D2, two-way level converting device D3.
Voltage transitions
According to ISO/IEC7816, the VCC voltage of contact is divided into A, B two classes, is respectively 5 volts or 3 volts.Yet the RF commutating voltage under the contactless working method is approximately 3 volts, and promptly VDD=3 lies prostrate ,/3 volts of VCC=5 volts.For this reason, be provided with a voltage regulator (Voltage Regulator), its effect is that VCC voltage is reduced to 3 volts by 5 volts.But ISO/IEC7816 for category-B, supply voltage VCC=3 volt, need not carry out pressure drop, a high voltage detector (High VoltageRegulator) is set so again, when detecting VCC>=4.5 volt, the low level V4_5 signal of voltage regulator output after oppositely makes the disconnection of N channel enhancement metal-oxide-semiconductor T1 switch, make the voltage regulator operate as normal, VCC voltage is reduced to 3 volts by 5 volts; If detect VCC<4.5 volt, then the V4_5 signal of the high level of voltage regulator output after reverse makes N channel enhancement metal-oxide-semiconductor T1 switch conduction, and voltage regulator is not worked.Like this, no matter be category-A or category-B ISO/IEC7816, last operating voltage all is 3 volts, identical with RF commutating voltage under the contactless working method, the main part of chip has unique operating voltage.
For category-A ISO/IEC7816, except VCC, other signal also is 5 volts of level, they can pass through unidirectional level translator D1, D2, two-way level converting device D3 carries out level conversion to be handled, wherein unidirectional level translator D1, D2 can realize that two-way level converting device D3 can combine by two unidirectional level translators with two reversers (connecing 5 volts and 3 volts of voltages respectively).
It is to have solved " electric current pours in down a chimney " problem that chip operation is easy to generate when the contact mode that the voltage of category-A ISO/IEC7816 is reduced to 3 volts additional benefit.
Unidirectional isolation
As shown in Figure 1, the N channel enhancement metal-oxide-semiconductor T2 that the present invention has increased a diode connection realizes " the unidirectional isolation " of power supply, when double-interface card is operated in contactless working method, and T2 reverse operation and disconnecting, VDD and VCC are isolated, avoid short circuit.On the contrary, if chip operation when the contact working method, T2 forward work and conducting is powered to entire chip by VCC.Simultaneously, in order to reduce pressure drop, the drain electrode of T2 connects 5 volts of VCC voltages, and its forward voltage drop approximates 0.3 volt like this.
The condition of work of voltage regulator, high voltage detector, T1, T2 is as shown in table 2.
The condition of work of table 2 high voltage detector, voltage regulator, T1, T2
Mode of operation High voltage detector Voltage regulator T1 T2
Contact Category-A ISO/IEC7816 V4_5=0 Work Disconnect Forward conduction
Category-B ISO/IEC7816 V4_5=1 Disconnect Connect
Contactless Disconnect Disconnect Disconnect Oppositely disconnect
2. signal switches
Signal switching circuit is by mode switch (Mode Switch) module, clock switch (ClockSwitch) module and restart switch (Reset Switch) module etc. and form.
Mode switch (Mode Switch) module
This module is mode detection and judging circuit, and it is made up of with door 2 d type flip flops and 1, and with the VDD power supply, wherein 2 d type flip flops constitute shift registers, VCC1 and POW_RST " with " the formation asynchronous reset signal.Its input signal is OSC, VCC1 and POW_RST, and output signal is MODE, and the MODE here is exactly the pattern discrimination signal, and high level is represented contactless mode of operation, and low level is represented the contact mode of operation.
If double-interface card is exposed among the effective field intensity, then the RF module obtains energy, and VDD powers on, POWER ON RESET circuit produces power-on reset signal POW_RST (low level pulse), the complex displacement bit register, its output MODE is a high level just, puts double-interface card in contactless mode of operation.
After double-interface card inserts card reader, after double-interface card inserts card reader, VCC powers on, the N channel enhancement metal-oxide-semiconductor T2 conducting of diode connection, VDD obtains power supply by VCC1, the POWER ON RESET circuit of RF module produces power-on reset signal POW_RST, and shift register is reset.When contact power supply VCC existed always and detect second rising edge of OSC, the Q of second d type flip flop end was changed to " 1 ", and/Q end is changed to " 0 ", and its output mode is a low level like this, puts double-interface card in the contact mode of operation; When double-interface card when card reader is extracted, VCC disappears, VCC1 becomes low level, shift register is reset, output mode is a high level, mode of operation is carried out the transition to contactless by contact.
If before double-interface card inserts card reader, effectively the RF field intensity exists, and promptly VDD powers, and the output MODE of shift register is changed to high level by the power-on reset signal POW_RST that produces on the POWER ON RESET circuit.Like this, after double-interface card inserted card reader, POWERON RESET circuit no longer produced power-on reset signal POW_RST, but when detecting second rising edge of OSC, putting output MODE equally is low level, and double-interface card switches to the contact mode of operation from contactless mode of operation.
When double-interface card is operated in contactless working method, because the contact of contact is to expose outside, the contact ratio is easier to be subjected to external interference (as electrostatic induction), OSC and VCC might produce the pseudo-activation signal that disturbs, but, have only OSC and VCC effectively just can play the effect of mode switch simultaneously in Mode Switch module.And in general, the interference waveform envelope of OSC and VCC is identical, clearly, is very beneficial for anti-interference as the trigger point with second rising edge of OSC.
When double-interface card was operated in the contact working method, the RF module was subjected to electromagnetic interference (EMI) easily and produces false signal.Yet because at this moment VDD is by the VCC power supply, POWE ON RESET circuit no longer produces power-on reset signal POW_RST, and therefore, the mode switch circuit is unaffected.
Clock switch (Clock Switch) module and restart switch (Reset Switch) module
Clock switch (Clock Switch) and to restart switch (Reset Switch) all be data selector, just in Clock Switch, also comprised the clock division function, this is because the frequency of RF_CLK is 13.56MHz, owing to RAM speed may not catch up with, so need carry out 2 frequency divisions.The function of ClockSwitch and Reset Switch can be described with following simple false code:
SYS_CLK=(Mode==0)?OSC:RF_CLK/2;
SYS_RST=(Mode==0)?PAD_RST:POW_RST;
3. not stationary state Signal Processing
As shown in Figure 1, when double-interface card was operated in contactless working method, contact signals such as OSC, PAD_RST, IO were not stationary states, and in addition, because the not power supply of OSC Detector module, so the Contact signal also is not stationary state.
By the cmos device principle as can be known, no matter the grid input signal is high level " 1 " or low level " 0 ", and pull up pipe or pull down pipe among the CMOS always have one to be in " disconnection " state, and therefore, the CMOS quiescent dissipation is extremely low; But when the grid input signal was " not stationary state ", pullup pipe and pull down pipe be " conducting " all, causes big power consumption.The function of low-power consumption when realizing that double-interface card is operated in contactless working method, so in circuit, OSC, PAD_RST, four signals of IO, VCC are parallel to N channel enhancement metal-oxide-semiconductor T3, T4, T5, T6 respectively, when double-interface card is operated in contactless working method, mode switch (Mode Switch) module output Mode=1, all conductings of T3, T4, T5 and T6 all are changed to low level to OSC, PAD_RST, IO, VCC signal.Wherein, R3, R4, R5, R6 play metering function, to prevent short circuit.

Claims (8)

1, the changing method of a kind of double-interface card contact and contactless mode of operation is characterized in that: the default conditions of system are contactless mode of operation, but the right of priority of contact mode of operation is higher than contactless mode of operation; When contact active information and contactless active information occurred simultaneously, the contact mode of operation was activated, the then conductively-closed of contactless mode of operation; Contactless mode of operation can be touched the formula mode of operation and interrupt when activating or keep, the contact mode of operation then cannot be interrupted by contactless mode of operation when activating or keep.
2, changing method according to claim 1 is characterized in that described changing method can be divided into the power supply switching and signal switches.
3, changing method according to claim 2 is characterized in that: described power supply switches and is undertaken by mimic channel; Described mimic channel comprises N channel enhancement metal-oxide-semiconductor (T2), two unidirectional level translators (D1, D2), the two-way level converting device (D3) of voltage regulator, high voltage detector, N channel enhancement metal-oxide-semiconductor (T1), diode connection; Its job step is: for category-A ISO/IEC7816, by voltage regulator VCC voltage is reduced to 3 volts by 5 volts, and carry out level conversion by unidirectional level translator (D1, D2) and two-way level converting device (D3) and handle, transfer other signals to 3 volts by 5 volts; For category-B ISO/IEC7816, when high voltage detector detected VCC>=4.5 volt, the low level V4_5 signal of voltage regulator output after oppositely made the disconnection of N channel enhancement metal-oxide-semiconductor (T1) switch, make the voltage regulator operate as normal, VCC voltage is reduced to 3 volts by 5 volts; If detect VCC<4.5 volt, then the V4_5 signal of the high level of voltage regulator output after reverse makes N channel enhancement metal-oxide-semiconductor (T1) switch conduction, and voltage regulator is not worked; Wherein said VCC is a contact contact supply voltage.
4, changing method according to claim 3 is characterized in that: when contactless working method, N channel enhancement metal-oxide-semiconductor (T2) reverse operation of diode connection and disconnecting is isolated VDD and VCC; When the contact working method, N channel enhancement metal-oxide-semiconductor (T2) the forward work of diode connection and conducting is powered to entire chip by VCC; Wherein said VDD is a RF circuit power voltage.
5, changing method according to claim 2 is characterized in that: described signal switches and is undertaken by signal switching circuit, and described signal switching circuit is made up of mode switch module, clock switch module, reset switch module.
6, changing method according to claim 5, it is characterized in that: described mode switch module is mode detection and judging circuit, it is made up of with door 2 d type flip flops and 1, and power with VDD, wherein 2 d type flip flops constitute shift register, VCC1 and POW_RST " with " the formation asynchronous reset signal; Its job step is: if double-interface card is exposed among the effective field intensity, then the RF module obtains energy, and VDD powers on, and shift register is reset, and puts double-interface card in contactless mode of operation; After double-interface card inserted card reader, VCC powered on, and VDD obtains power supply by VCC1, and when second rising edge of OSC arrived, second d type flip flop was set, and the shift register output low level is put double-interface card in the contact mode of operation; When double-interface card when card reader is extracted, VCC disappears, VCC1 becomes low level, shift register is reset, output mode is a high level, mode of operation is carried out the transition to contactless by contact; Wherein said VCC1 is a voltage regulator output internal signal, and described POW_RST is a RF circuit power-on reset signal, and described OSC is the contact clock input signal.
7, changing method according to claim 5 is characterized in that: clock switch and reset switch are data selectors, have also comprised the clock division function in clock switch.
8, changing method according to claim 1 and 2 is characterized in that: OSC, PAD_RST, four signals of IO, VCC are parallel to N channel enhancement metal-oxide-semiconductor (T3, T4, T5, T6) respectively; Wherein said PAD_RST is a contact contact reset signal, and described IO is a contact contact data line, and described OSC is the contact clock input signal, and described VCC is a contact contact supply voltage.
CN 03142215 2003-08-12 2003-08-12 Toutch and nou-toutch type working-mode changing-over method in double interface card Expired - Fee Related CN1288592C (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101131670B (en) * 2006-08-25 2010-04-14 上海华虹集成电路有限责任公司 Double-interface smart card simulation system
CN101350058B (en) * 2008-05-26 2010-12-29 北京飞天诚信科技有限公司 Method for self-adapting double-interface IC card protocol mode
CN102054151B (en) * 2009-11-09 2014-08-20 上海华虹集成电路有限责任公司 Method for quickly judging operating mode of dual interface smartcard
CN102110237B (en) * 2009-12-23 2012-11-14 北京中电华大电子设计有限责任公司 Processing method for lowering power consumption of multi-interface IC (Integrated Circuit) card pin
CN102467647B (en) * 2010-11-16 2015-02-18 北京中电华大电子设计有限责任公司 Judging method and circuit for work mode of dual-interface smart card
CN102611428B (en) * 2011-01-24 2016-07-27 上海华虹集成电路有限责任公司 Selection circuit for power voltage
CN102567776B (en) * 2011-12-27 2015-07-22 广州中大微电子有限公司 Double-interface intelligent card capable of quickly implementing mode selection and implementing method
CN102930331A (en) * 2012-11-15 2013-02-13 北京昆腾微电子有限公司 Power supply management circuit of double-interface card and double-interface card
CN104463314B (en) * 2014-12-05 2018-03-02 大唐微电子技术有限公司 A kind of smart card issuance method and system
CN105958986B (en) * 2016-05-30 2019-02-22 清华大学 A kind of electric power management circuit of double-interface IC card
CN105930754B (en) * 2016-06-16 2019-07-12 飞天诚信科技股份有限公司 A kind of IC card card reader and its Interface Expanding method

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