CN1285969C - Photoresist for high-resolution imager - Google Patents
Photoresist for high-resolution imager Download PDFInfo
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- CN1285969C CN1285969C CN 03138830 CN03138830A CN1285969C CN 1285969 C CN1285969 C CN 1285969C CN 03138830 CN03138830 CN 03138830 CN 03138830 A CN03138830 A CN 03138830A CN 1285969 C CN1285969 C CN 1285969C
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- photoresist
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- mapping device
- resolving power
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Abstract
The present invention relates to a photoresist used for high-resolution mapping devices, which is mainly prepared from oxygen permeability sensitizing polymer materials, namely pyrrole compounds, amide compounds, polyvinyl alcohol compounds and azido compounds as optical crosslinking agents, wherein the amide compound can be selected from at least one of hexone amide, acrylamide or polyacrylamide; the pyrrole compound can be selected from at least one of N-methyl pyrrolidone, ethyl ketopyrrolidine or polyvinylpyrrolidone; the azido compound can be selected from at least one of di-triazo phenyl vinyl sodium disulfate, di-triazo phenyl acetone sodium disulfate and dimethyl cycloethyl ketone disodium; the alcohol can be selected from at least one of normal butyl alcohol, ethylene glycol and glycerol. The present invention effectively improves the photosensitivity of the photoresist used for high-resolution mapping devices, formed black matrix patterns of high-resolution display tubes can not deform, and the accuracy of exposure area dimensions of the photoresist is increased.
Description
One, technical field:
The invention belongs to a kind of photoresist, be specifically related to the high resolving power mapping device of a kind of sharpness more than 380 lines with photoresist.
Two, background technology:
The high resolving power mapping device rises at present, as the high-definition color kinescope, high-definition color display tube, high-definition plasma mapping device etc., this has proposed higher technology request for utilization for supporting with it material such as photoresist, the high resolving power mapping device is compared with traditional mapping device, and principal feature is to have that diameter is littler, the more pixel of number.Conventional lithography glue photosensitivity is poor, the degree of accuracy of exposure area size is not high, cause the black matrix pattern deformation, can not form the black matrix pattern of good high-resolution cathode ray tube, can not make the high resolving power mapping device obtain accurate, the special thin pixel groups of proportioning of size, conventional lithography glue has not been suitable for the production of high resolving power mapping device.
Three, summary of the invention
It is poor that the present invention will solve conventional lithography glue photosensitivity, the degree of accuracy of exposure area size is not high, cause the black matrix pattern deformation, can not make the high resolving power mapping device obtain accurate, the special thin pixel groups of proportioning of size, be not suitable for the technical matters that the high resolving power mapping device is produced.
The technical solution used in the present invention is: a kind of high resolving power mapping device with photoresist, it is made up of following materials of weight proportions:
100 parts of deionized waters
Amides compound 2-3.2 part
3.3 parts of azoles
Nitrine compounds 1.2-2.88 part
2 parts of alcohols
Wherein, amides compound can be chosen a kind of from hexone acid amides, acrylamide or polyacrylamide at least; Azoles can be chosen a kind of from N-Methyl pyrrolidone, ethyl pyrrolidone or polyvinylpyrrolidone at least; The nitrine compounds can from two-fold nitrogen all-benzene is a kind of for choosing at least ethene sodium disulfonate, two-fold pyridine fork acetone sodium disulfonate and the two methyl ring ethyl ketone disodiums; Alcohols can be chosen a kind of from normal butyl alcohol, ethylene glycol, glycerine at least.High resolving power mapping device preparation method with photoresist: above-mentioned material is sequentially added in the container, and organic principle adds after fashionable palpus waits the back material to dissolve fully adding again, and will keep the abundant dispersed with stirring of material in the organic principle adition process simultaneously.
This photoresist is compared with conventional lithography glue, have following beneficial effect: the high resolving power mapping device has added suitable alcohols with photoresist, effectively improved high resolving power mapping device photosensitivity with photoresist, thereby improved the degree of accuracy of resist exposure area size, can make the high resolving power mapping device obtain accurate, the special thin pixel groups of proportioning of size.
Five, embodiment:
Embodiment 1
100 parts of deionized waters
0.5 part of hexone acid amides
1.5 parts of polyacrylamides
3.3 parts of polyvinylpyrrolidones
1.2 parts of two-fold pyridine fork acetone sodium disulfonates
2 parts of glycerine
Above-mentioned material is sequentially added in the container, fully stirs, dissolves.Deployed material is applied on the high resolving power mapping device and exposes, and etching processing can form ideal pattern.
Embodiment 2
100 parts of deionized waters
3.2 parts of hexone acid amides
2 parts of ethyl pyrrolidones
1.3 parts of N methyl pyrrolidones
2.88 parts of two methyl ring ethyl ketone disodiums
2 parts of butylene glycols
Above-mentioned material is sequentially added in the container, fully stirs, dissolves.Deployed material is applied on the high resolving power mapping device and exposes, and etching processing can form ideal pattern.
Embodiment 3
100 parts of deionized waters
2.5 parts of polyacrylamides
3.3 parts of ethyl pyrrolidones
Two-fold nitrogen all-benzene is for 1 part of ethene sodium disulfonate
1.4 parts of two methyl ring ethyl ketone disodiums
1 part of butylene glycol
1 part of normal butyl alcohol
Above-mentioned material is sequentially added in the container, fully stirs, dissolves.Deployed material is applied on the high resolving power mapping device and exposes, and etching processing can form ideal pattern.
Embodiment 4
100 parts of deionized waters
3.0 parts of acrylamides
1 part of ethyl pyrrolidone
1.3 parts of N methyl pyrrolidones
1 part of polyvinylpyrrolidone
1.9 parts of two-fold pyridine fork acetone sodium disulfonates
0.7 part of butylene glycol
1.3 parts of glycerine
Above-mentioned material is sequentially added in the container, fully stirs, dissolves.Deployed material is applied on the high resolving power mapping device and exposes, and etching processing can form ideal pattern.
Claims (2)
1, a kind of high resolving power mapping device is characterized in that with photoresist: it is made up of following materials of weight proportions:
100 parts of deionized waters
Amides compound 2-3.2 part
3.3 parts of azoles
Nitrine compounds 1.2-2.88 part
2 parts of alcohols
Wherein, amides compound is chosen a kind of from hexone acid amides, acrylamide or polyacrylamide at least; Azoles is chosen a kind of from N-Methyl pyrrolidone, ethyl pyrrolidone or polyvinylpyrrolidone at least; The nitrine compounds from two-fold nitrogen all-benzene is a kind of for choosing at least ethene sodium disulfonate, two-fold pyridine fork acetone sodium disulfonate and the two methyl ring ethyl ketone disodiums; Alcohols is chosen a kind of from normal butyl alcohol, ethylene glycol, glycerine at least;
2, a kind of high resolving power mapping device as claimed in claim 1 preparation method with photoresist for preparing is characterized in that: above-mentioned material is sequentially added in the container, fully stir, dissolve.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03138830 CN1285969C (en) | 2003-07-14 | 2003-07-14 | Photoresist for high-resolution imager |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03138830 CN1285969C (en) | 2003-07-14 | 2003-07-14 | Photoresist for high-resolution imager |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1487361A CN1487361A (en) | 2004-04-07 |
| CN1285969C true CN1285969C (en) | 2006-11-22 |
Family
ID=34154921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 03138830 Expired - Fee Related CN1285969C (en) | 2003-07-14 | 2003-07-14 | Photoresist for high-resolution imager |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1285969C (en) |
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2003
- 2003-07-14 CN CN 03138830 patent/CN1285969C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1487361A (en) | 2004-04-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SONG BINGRANG Free format text: FORMER OWNER: LIU TONGSHENG Effective date: 20061110 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20061110 Address after: 030021, room 1, unit 11, building 15, 402 west east street, Jinyuan District, Taiyuan, China Patentee after: Song Bingrang Address before: 030021 No. 113, Chemical Road, Jinyuan District, Shanxi, Taiyuan Patentee before: Liu Tongsheng |
|
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20061122 Termination date: 20100714 |