CN1281262A - Technology for making infrared sensor of micro-mechanical thermoelectric pile - Google Patents
Technology for making infrared sensor of micro-mechanical thermoelectric pile Download PDFInfo
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- CN1281262A CN1281262A CN00116388A CN00116388A CN1281262A CN 1281262 A CN1281262 A CN 1281262A CN 00116388 A CN00116388 A CN 00116388A CN 00116388 A CN00116388 A CN 00116388A CN 1281262 A CN1281262 A CN 1281262A
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- silicon
- silicon nitride
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Abstract
A technology for manufacturing the infrared sensor of micro-mechanical thermoelectric pile features that the front-face photoetching process is used to make up a suspended arm structure to reduce heat consumption by ambient air layer and the monocrystal silicon material is used on insulating body. Its advantages include simplified technology, raised heat to electricity transform efficiency, and higher sensitivity.
Description
The present invention relates to thermopile IR detector, particularly device size is in the manufacturing of the micromachined thermopile infrared detector of submillimeter magnitude.
At present, in industry-by-industry and departments such as industry, agricultural, medical science, traffic, infrared measurement of temperature, infrared hygrometric, infrared treatment, infrared detection, infrared alarm, infrared remote sensing, infrared anti-false are the advanced technologies that every profession and trade falls over each other to select for use.Infrared Detectors is a critical component the most basic in the infrared gear, is the heart of infrared facility.Thermopile IR detector then is a kind of of numerous Infrared Detectorss, belongs to thermal infrared detector.US Patent specification US-5059543 discloses a kind of like this manufacture method of at present more popular thermal reactor Infrared Detectors, it is with the back side corrosion of silicon anisotropic etching agent from silicon substrate on silicon substrate, erode the silicon in centre, only stay silica-silicon nitride (SiO of about 1 micron thickness at the top
2-Si
3N
4) sandwich layer (closing membrane), two kinds of different pyroelecthc properties materials (thermocouple) deposition and formation thermocouple are right.The cold junction that comprises the cold junction district is made of the same thick frame with silicon substrate around film, and it also is the supporter that erodes away structure that frame is not only radiating block.The hot-zone is that thermal reactor thermojunction radius is with interior diaphragm area.Because it is right that thermal reactor is that the composite membrane with whole layer supports thermocouple, do not have adiabatic environment between hot junction and the cold junction, make virtually heat can by thermocouple to by face to propagation everywhere, so conversion efficiency of thermoelectric is not high.In the thermocouple material that adopts, Bi-Sb is arranged, polysilicon-Au, Te-InSb, Te-Ag or the like, present trend is to adopt the system of polysilicon and gold or aluminium.This mainly is because silicon materials and CMOS standard integrated circuit technology have good compatibility.Yet under same doping content, the thermoelectric power of polysilicon (Seebeck coefficient) is compared with monocrystalline silicon, and is relatively low, and impedance is big, brought the low problem of signal to noise ratio thus.And the manufacture process requirement of these devices is aimed at photoetching on the silicon chip two sides, and this has increased the area and the device cost of device.In addition, in making the thermal reactor Infrared Detectors, there is very large poor efficiency in the structure of device, and this has also increased the area and the cost of device.
The manufacture method that the purpose of this invention is to provide a kind of micromachined thermopile infrared detector, it aims at photoetching without tow sides, not only simplified manufacturing process, improved conversion efficiency of thermoelectric, and made produced detector show higher sensitivity.
The objective of the invention is to realize by the following method, it may further comprise the steps: (1) carries out the boron doping with the method that ion injects to monocrystalline silicon layer on silicon materials; (2) kept 30 minutes down at 950 ℃, ion is injected carry out annealing in process, on the silicon layer after the doping, make the silicon strip shape that is used to form thermocouple then by lithography, go out required silicon strip with dry etching; (3) under 1000～1150 ℃, silicon strip is carried out oxidation processes, form one deck silica, deposit one deck silicon nitride in the above with Low Pressure Chemical Vapor Deposition again; (4) on silicon nitride layer, make fairlead by lithography, use dry etching silicon nitride then, fall silica, expose silicon strip with wet etching, subsequent on whole surface depositing metal layers; (5) on metal level, make the required bonding jumper shape that is used to form thermocouple by lithography, obtain bonding jumper with wet etching, right with silicon strip formation thermocouple; (6) carve the uptake zone shape in surface light, deposit black matrix then in the above, then by the lift-off technology district that is absorbed; (7) carve the figure in corrosion structure hole at front lighting, fall silicon nitride, fall silica, erode silicon with Tetramethylammonium hydroxide or potassium hydroxide solution again, form cantilever thermal reactor structure and support frame with wet etching with dry etching.Wherein the described technology of step (1) also can be on silicon substrate deposition one deck silicon nitride earlier, forms one deck silica with the low temperature depositing method again, and chemical deposition one deck polysilicon thereon carries out boron again and mixes then.Described silicon materials are monocrystalline silicon on the insulator.The concentration of described boron is about 10
18-10
19Centimetre
-3The order of magnitude, silicon oxide layer thickness are about 0.4 micron, and silicon nitride layer thickness is about 0.1 micron.
The advantage that adopts the thermopile IR detector of method manufacturing provided by the invention to compare with other thermopile IR detectors is: in the thermal reactor structure, what the support thermocouple was right is cantilever design, have only being connected of part between hot junction and the cold junction, other is air on every side, therefore can reduce heat dissipation, improve conversion efficiency of thermoelectric; Adopt positive photoetching, promptly corrosion structure and thermocouple can produce the cantilever design that reduces heat dissipation on every side with air layer, and simplify the making of thermal reactor in the method with one side; With monocrystalline silicon on the insulator (Silicon On Insulator, be called for short SOI) material, wherein silicon single crystal is compared with polysilicon had high Seebeck coefficient, resistance is little, and loss is just little when having electric current to pass through.
The invention will be further described below in conjunction with accompanying drawing.
Fig. 1 is the material cutaway view after monocrystalline silicon mixes through boron on the insulator.
Fig. 2 is the material schematic diagram of silicon strip behind oxidation and low-pressure chemical vapor deposition.
Fig. 3 is the schematic diagram that deposits metal level on the silicon strip.
Fig. 4 is that thermocouple is to forming schematic diagram.
Fig. 5 is that the uptake zone forms schematic diagram.
Fig. 6 is the structural representation of thermal reactor Infrared Detectors.
Fig. 7 is that the another kind of step 1 is selected.
The manufacture craft process of micromachined thermopile infrared detector of the present invention is exemplified below:
1. on monocrystalline silicon (SOI) material on the insulator, monocrystalline silicon layer is carried out the boron doping, make the concentration of boron be approximately 10 with the method that ion injects
18-10
19Centimetre
-3The order of magnitude, as shown in Figure 1;
2. kept 30 minutes down at 950 ℃, ion is injected carry out annealing in process, on the silicon layer after the doping, make the silicon strip shape that is used to form thermocouple then by lithography, obtain required silicon strip 24 with dry etching method, as shown in Figure 1;
3. under 1150 ℃, silicon strip 24 is carried out oxidation processes, form a layer thickness and be 0.4 micron silica (SiO
2) 29, as shown in Figure 2, using low-pressure chemical vapor deposition (Low PressureChemical Vaporization Deposition, be called for short LPCVD) method to deposit a layer thickness in the above again is 0.1 micron silicon nitride (Si
3N
4) 27, this structure of composite membrane can be eliminated stress wherein;
4. at silicon nitride (Si
3N
4) layer makes fairlead 26 by lithography on 27, uses dry etching silicon nitride (Si then
3N
4) 27, fall silica (SiO with wet etching
2) 29, expose silicon strip 24, subsequent on whole surface depositing metal layers, wherein metal can be selected chromium, gold, silver etc. for use, as shown in Figure 3;
5. make the required bonding jumper shape that is used to form thermocouple by lithography on metal level, obtain bonding jumper 25 with wet etching, right with silicon strip 24 formation thermocouples, wherein bonding jumper 25 is realized being electrically connected by fairlead 26 with silicon strip 24, as shown in Figure 4;
6. as shown in Figure 5, carve the uptake zone shape, deposit black matrix then in the above, be generally carbon black and various metal black, then be absorbed and distinguish 22 by lift-off technology in surface light;
7. as shown in Figure 6, carve the figure in corrosion structure hole 18, fall silicon nitride (Si with dry etching at front lighting
3N
4) 27, fall silica (SiO with wet etching
2) layer 29, the anisotropic etchant Tetramethylammonium hydroxide (TMAH) of recycle silicon or potassium hydroxide (KOH) solution corrosion fall silicon, form cantilever thermal reactor structure and support frame 17, silicon substrate 28 can all be removed except framework, has so just finished the making of micromachined thermopile infrared detector.
Please refer to shown in Figure 7ly, wherein, the also available following steps of above-mentioned step 1 replace, promptly on silicon substrate 28, and deposition one deck silicon nitride (Si earlier
3N
4) 27, form silica (SiO with low temperature deposition method again
2) layer 31, chemical deposition one deck polysilicon 30 thereon carries out boron again and mixes then, makes the concentration of boron be approximately 10
18-10
19Centimetre
-3The order of magnitude.
Claims (4)
1. the manufacture method of micromachined thermopile infrared detector is characterized in that it may further comprise the steps:
(1) on silicon materials, monocrystalline silicon layer is carried out the boron doping with the method that ion injects;
(2) kept 30 minutes down at 950 ℃, ion is injected carry out annealing in process, on the silicon layer after the doping, make the silicon strip shape that is used to form thermocouple then by lithography, go out required silicon strip with dry etching;
(3) under 1000～1150 ℃, silicon strip is carried out oxidation processes, form one silica layer, deposit a silicon nitride layer in the above with Low Pressure Chemical Vapor Deposition again;
(4) on silicon nitride layer, make fairlead by lithography, use dry etching silicon nitride then, fall silica, expose silicon strip with wet etching, subsequent on whole surface depositing metal layers;
(5) on metal level, make the required bonding jumper shape that is used to form thermocouple by lithography, obtain bonding jumper with wet etching, right with silicon strip formation thermocouple;
(6) carve the uptake zone shape in surface light, deposit black matrix then in the above, then by the lift-off technology district that is absorbed;
(7) carve the figure in corrosion structure hole at front lighting, fall silicon nitride, fall silica, erode silicon with Tetramethylammonium hydroxide or potassium hydroxide solution again, form cantilever thermal reactor structure and support frame with wet etching with dry etching.
2. the manufacture method of micromachined thermopile infrared detector according to claim 1, it is characterized in that wherein the described technology of step (1) also can be elder generation's deposition one deck silicon nitride on silicon substrate, form one deck silica with the low temperature depositing method again, chemical deposition one deck polysilicon thereon carries out boron again and mixes then.
3. the manufacture method of micromachined thermopile infrared detector according to claim 1 is characterized in that described silicon materials are monocrystalline silicon on the insulator.
4. the manufacture method of micromachined thermopile infrared detector according to claim 1 and 2 is characterized in that the concentration of described boron is about 10
18-10
19Centimetre
-3The order of magnitude, silicon oxide layer thickness are about 0.4 micron, and silicon nitride layer thickness is about 0.1 micron.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN00116388A CN1120529C (en) | 2000-06-07 | 2000-06-07 | Technology for making infrared sensor of micro-mechanical thermoelectric pile |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN00116388A CN1120529C (en) | 2000-06-07 | 2000-06-07 | Technology for making infrared sensor of micro-mechanical thermoelectric pile |
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| CN1281262A true CN1281262A (en) | 2001-01-24 |
| CN1120529C CN1120529C (en) | 2003-09-03 |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100404408C (en) * | 2005-11-16 | 2008-07-23 | 华东师范大学 | Non-refrigeration infrared detector heat insulation substrate preparation method |
| CN100422070C (en) * | 2005-08-12 | 2008-10-01 | 中国科学院上海微系统与信息技术研究所 | Mobile microstructure cosupported by silicon and silicon dioxide, and its production method |
| CN100423310C (en) * | 2006-04-29 | 2008-10-01 | 中国科学院上海微系统与信息技术研究所 | Micromechanical thermalelectric-stack infrared detector compatible with co-complementive metal oxide semiconductor technology and preparing method |
| CN100440561C (en) * | 2006-11-17 | 2008-12-03 | 中国科学院上海微系统与信息技术研究所 | Infrared detector of micro mechanical thermopile, and preparation method |
| CN100440558C (en) * | 2004-08-20 | 2008-12-03 | 中国科学院上海微系统与信息技术研究所 | Infrared heating pile detector array structure using silicon support beam and producing method |
| CN100562725C (en) * | 2003-09-29 | 2009-11-25 | 中国科学院上海微系统与信息技术研究所 | Micromachined thermopile infrared detector and manufacture method thereof |
| CN101183690B (en) * | 2007-12-13 | 2012-10-10 | 上海集成电路研发中心有限公司 | Infrared detector and method of producing the same |
| CN102757011A (en) * | 2011-04-25 | 2012-10-31 | 中北大学 | Micromechanical thermopile infrared detector and manufacturing method thereof |
| CN110589755A (en) * | 2019-09-06 | 2019-12-20 | 赣南师范大学 | Double-sided self-aligned etched silicon cantilever array thermoelectric converter embedded with polycrystalline silicon resistor |
-
2000
- 2000-06-07 CN CN00116388A patent/CN1120529C/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100562725C (en) * | 2003-09-29 | 2009-11-25 | 中国科学院上海微系统与信息技术研究所 | Micromachined thermopile infrared detector and manufacture method thereof |
| CN100440558C (en) * | 2004-08-20 | 2008-12-03 | 中国科学院上海微系统与信息技术研究所 | Infrared heating pile detector array structure using silicon support beam and producing method |
| CN100422070C (en) * | 2005-08-12 | 2008-10-01 | 中国科学院上海微系统与信息技术研究所 | Mobile microstructure cosupported by silicon and silicon dioxide, and its production method |
| CN100404408C (en) * | 2005-11-16 | 2008-07-23 | 华东师范大学 | Non-refrigeration infrared detector heat insulation substrate preparation method |
| CN100423310C (en) * | 2006-04-29 | 2008-10-01 | 中国科学院上海微系统与信息技术研究所 | Micromechanical thermalelectric-stack infrared detector compatible with co-complementive metal oxide semiconductor technology and preparing method |
| CN100440561C (en) * | 2006-11-17 | 2008-12-03 | 中国科学院上海微系统与信息技术研究所 | Infrared detector of micro mechanical thermopile, and preparation method |
| CN101183690B (en) * | 2007-12-13 | 2012-10-10 | 上海集成电路研发中心有限公司 | Infrared detector and method of producing the same |
| CN102757011A (en) * | 2011-04-25 | 2012-10-31 | 中北大学 | Micromechanical thermopile infrared detector and manufacturing method thereof |
| CN102757011B (en) * | 2011-04-25 | 2015-07-15 | 中北大学 | Micromechanical thermopile infrared detector and manufacturing method thereof |
| CN110589755A (en) * | 2019-09-06 | 2019-12-20 | 赣南师范大学 | Double-sided self-aligned etched silicon cantilever array thermoelectric converter embedded with polycrystalline silicon resistor |
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| CN1120529C (en) | 2003-09-03 |
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