CN1277488A - Contact semiconductor-capacitor pulse power generator - Google Patents

Abstract

The present invention discloses one equipment to change heat energy into electric energy by means of the charge and discharge of semiconductor. Tunnel diode is utilized to excite and charge two connected semiconductor capacitors and four electronic switches are connected to some capacitors. By means of the repeated on and off of the switches, the capacitors convert the heat of bodies in normal temperature into pulse current while the temperature of ambient bodies decreases automatically.

Description

Contact semiconductor-capacitor pulse power generator

The present invention relates to a kind of thermoelectric energy conversion equipment.

Technology related to the present invention has thermoelectric couple, in the closed circuit that different metal is formed, if two contact points have the temperature difference, then has electric current to pass through in the circuit.The thermoelectric device develops to the semiconductor direction from metal now, though it can be converted into electric energy to heat energy, efficient is very low, on a large scale heat energy is converted into electric energy and still earlier heat energy is converted into mechanical energy, drives generator for electricity generation again.Obtaining of heat energy mainly is to obtain by combustion chemistry fuel, and this is the key link that is difficult to break away from most in the many predicaments that face of present human society, is total root of all existing public hazards.The charge and discharge effect of " contact capacity pulse power generator equipment " (patent No. 98114180.3) applying electronic switch control power capacitor and discharging capacitor is converted into pulse current with the heat energy of normal temperature object, has opened up the new method of using energy source.Though semiconductor has difference with metal aspect conductive mechanism, also interosculate.Intrinsic semiconductor has excellent conducting performance by P type semiconductor and the N type semiconductor that forms that mix, PN junction has unilateral conduction, semiconductor utilizes insulator to separate also can form electric capacity, and the generating and the chiller that utilize difference of temperature to make mostly adopt semiconductor.

Purpose of the present invention just is to provide a kind of equipment that the semiconductor electronic technology directly is converted to the heat energy in the normal temperature object electric energy of using.

Semiconductor is the material that the class between conductor and insulator has dual character, though the itself electric conductivity is not as metallic conductor, but by mixing the electric conductivity that impurity element but can change it greatly, same block semiconductor is mixed triad boron on one side form P type semiconductor, another side mixes pentad phosphorus and forms N type semiconductor, in the space charge region of middle PN junction, form potential barrier, stoped the continuation campaign of charge carrier.PN junction has unilateral conduction, adds forward voltage, and PN junction can conducting, adds reverse voltage, and potential barrier is strengthened, and the PN junction blocking-up be equivalent to a capacitor, but its capacitance is smaller.In order to strengthen the capacitance of semiconductor capacitor, can strengthen the area of semiconductor capacitor pole plate according to the principle of metal plate capacitor, dwindle the distance between the semiconductor pole plate, and between N type pole plate and P type pole plate, put into the high dielectric of dielectric coefficient.Semi-conductive work function is relevant with the concentration of mixing impurity, and by highly doped, the work function of N type semiconductor is lower than metal, and the work function of P type semiconductor is than the height of metal.Couple together with the N type pole plate and the P type pole plate of conductor with semiconductor capacitor, the electronics of N type pole plate will be along conductor flow to P type pole plate, and semiconductor capacitor will charge voluntarily, N pole plate positively charged, and the P pole plate is electronegative.If with corresponding the linking to each other of pole plate of two semiconductor capacitors, promptly the N utmost point of a capacitor extremely links to each other with the P of another semiconductor capacitor, its P utmost point extremely links to each other with the N of another semiconductor capacitor, and these two continuous semiconductor capacitors just will charge voluntarily.If the two poles of the earth with the capacitor of a metal polar plate link to each other with the two-plate of a semiconductor capacitor again, because metallicl work function is between N type semiconductor and P type semiconductor, according to the electric principle of contact, it is irrelevant that contact potential difference only occurs in the character of the conductor two ends that are in contact with one another and middle conductor, metal capacitor will be recharged, the semiconductor capacitor that links to each other with it will be owing in the middle of being in, will be not charged, and another semiconductor capacitor is still with original electric charge.After metal capacitor and semiconductor capacitor disconnection, it is still with original electric charge, and uncharged semiconductor capacitor is owing to link to each other with another semiconductor capacitor, and it will recover original electriferous state, will produce pulse current on their connecting lines.If charged metal capacitor is linked to each other with the two-plate of another semiconductor capacitor, metal capacitor will discharge and be reversed charging, and the semiconductor capacitor that links to each other with it is owing to become not charged in the middle of being in.When metal capacitor and its disconnection, metal capacitor is still with original electric charge, and semiconductor capacitor will recover original electriferous state, will produce pulse current in the circuit that connects semiconductor capacitor.In a word, the two-plate of metal capacitor alternately contacts with continuous two semiconductor capacitors, and the charge and discharge effect will take place the pole plate of metal capacitor, and the pulse current of alternation will take place in circuit.The constant pulse current of direction takes place in the circuit that connects two semiconductor capacitors.The conducting of metal capacitor and two semiconductor capacitors is controlled with electronic switch with shutoff, in open-circuit, under normal temperature condition, owing to the effect that discharges and recharges of capacitor, just the heat energy of object is converted into the energy of pulse current.

Being in closed circuit is converted into electric energy with heat energy, and the existence of the temperature difference is a necessary condition.But in open electric circuit, there is not the temperature difference can form potential difference yet.Charge carrier in the semiconductor forms potential barrier because the effect of warm-up movement can be spread to the little place of concentration from the big place of concentration when reaching poised state at the interface place, flow with the continuation that stops charge carrier.Technology in the past is just powerless in face of equilibrium state.The present invention regards balance as temporary transient, and it can make it not stop the ground conversion by suitable technological means, and disequilibrates voluntarily.The heat energy that the present invention will develop is present in air, rivers,lakes and seas and the earth, can obtain in each corner of the earth.Therefore, the sort of method that obtains heat energy with combustion fuel just become unnecessary.The main cause of air pollution is owing to a large amount of chemical energy sources that consume cause.Owing to be subjected to the constraint of traditional habit force, facing to the air pollution that stinking smell assaulting one's nostrils, merciless acid rain damages forest, pasture, farmland, building and historical relic and but feels simply helpless.The heat energy of the normal temperature object of the present invention exploitation is unlimited, does not need fuel, and proportion in production cost so just cuts down the consumption of energy.The energy circulation utilization has finally been solved the difficult problem of air pollution.The transformation of energy descends object temperature voluntarily in addition, and in the process of refrigeration, chemical substance refrigeration that need not be special can not damage effect to atmospheric ozone layer.

Further specify below in conjunction with accompanying drawing.

Fig. 1, X and Y are two semiconductor capacitors, the middle diode with a PN junction that connects.The N utmost point of X extremely links to each other with the P of Y, and the N utmost point of X extremely links to each other with the P of Y, owing to the motion of charge carrier, makes the N utmost point positively charged of two capacitors, and P is extremely electronegative.Capacitor Z is exactly the capacitor of common metal pole plate, and two-plate C and D are with a kind of metal.Be connected to electronic switch K1 between the C utmost point of capacitor Z and the N utmost point of capacitor X, be connected to K switch 2 between the D utmost point of capacitor Z and the P utmost point of capacitor X, be connected to electronic switch K3 between the D utmost point of capacitor Z and the N utmost point of capacitor Y, be connected to electronic switch K4 between the C utmost point of capacitor Z and the P utmost point of capacitor Y.

Fig. 2, while off switch K1 and K2, K3 and K4 still disconnect, and it is charged that capacitor Y and Z are in two ends, not charged in the middle of capacitor X is in.The P of capacitor Y is extremely electronegative, the C strip positive electricity of the capacitor Z that links to each other with it.The N utmost point positively charged of capacitor Y, the D strip negative electricity of the capacitor Z that links to each other with it.

Fig. 3, open K switch 1 and K2 simultaneously, K3 and K4 still disconnect, and the C plate of capacitor Z is positively charged still, and the D plate is still electronegative.Capacitor X becomes the place at one end by in the middle of being in, and recovers its original electriferous state.Electronics takes place in the line that connects two semiconductor capacitors by the pulsed electron stream of the N utmost point to direction shown in the P utmost point arrow.

Fig. 4, while off switch K3 and K4, K1 and K2 still disconnect.It is charged that capacitor X and Z are in two ends, not charged in the middle of capacitor Y is in.The N utmost point positively charged of capacitor X, the C utmost point of the capacitor Z that links to each other with it is become electronegative by positively charged, and the P of capacitor X is extremely electronegative, and the D plate of the capacitor Z that links to each other with it is by the electronegative positively charged that becomes.

Fig. 5 opens K switch 3 and K4 simultaneously, and K1 and K2 still disconnect.The C plate of capacitor Z is still electronegative, and the D plate is positively charged still, and capacitor Y becomes the place at one end by in the middle of being in, and recovers its original electriferous state.In the connecting line that connects two semiconductor capacitors, take place to flow to the pulsed electron shown in the P utmost point arrow by the N utmost point.

In the process that K switch 1, K2 and K3, K4 alternately close mutually and open, charging and discharge process take place between semiconductor power supply capacitor and metal discharge capacitor, the energy transition process takes place on the semi-conductive interface of difference, heat energy is converted into electric energy.

Semi-conductive touch voltage, by the concentration decision that semiconductor mixes impurity, in order to improve the touch voltage of semiconductor capacitor, the pole plate of capacitor will ooze assorted N type semiconductor and P type semiconductor manufacturing with height.Between two semiconductor capacitors, insert two tunnel diodes, as shown in Figure 6.The N utmost point of semiconductor capacitor X links to each other with the negative pole of tunnel diode a, and the positive pole of tunnel diode a extremely links to each other with the P of semiconductor capacitor Y.The N utmost point of semiconductor capacitor Y links to each other with the negative pole of tunnel diode b, and the positive pole of tunnel diode b extremely links to each other with the P of semiconductor capacitor X.Insert controllable silicon KD1 between the C utmost point of the N pole plate of capacitor X and metal discharge capacitor Z, insert controllable silicon KD2 between the P pole plate of capacitor X and the D pole plate of capacitor Z.Insert controllable silicon KD3 between the N pole plate of capacitor Y and the D utmost point of capacitor Z.Insert controllable silicon KD4 between the P pole plate of capacitor Y and the C pole plate of electric pocket Z.The program of control is conducting KD1 and KD2, shutoff simultaneously then simultaneously.While conducting KD3 and KD4 turn-off then simultaneously again, move in circles per second conducting and shutoff several ten thousand times.If the capacitance of capacitor is less, can adopt fast controllable silicon, as contactor.In order to improve the power of Blast Furnace Top Gas Recovery Turbine Unit (TRT), will increase the capacitance of semiconductor capacitor, on the basis that increases the pole plate area, dwindle the distance between two-plate, and between two-plate, put into the high dielectric of dielectric coefficient.Multiple unit capacitor is together in series, promptly improves touch voltage,, improved the discharge time of unit interval simultaneously again along with total capacitance reduces.Press traditional view, heat energy is converted into electric energy, need the temperature difference, the efficient of conversion can not equal 1.Absorb heat from high temp objects, a part is converted into electric energy, and another part is to the cryogenic object heat release, and there is elimination to have the trend of the temperature difference now, the contact Blast Furnace Top Gas Recovery Turbine Unit (TRT) reverses this relation: absorb heat from the normal temperature object, a part is converted into electric energy, and another part is emitted to high temp objects.This is a contradiction, is again unified.Because by conventional method, it is the searching power supply that is in closed circuit, the summation of the contact potential difference that is caused by work function in the closed circuit is zero, so because the contact potential difference that electron density causes is that being in closed circuit is converted into electric energy with some heat energy by the temperature difference when contact point of temperature difference decision.The contact Blast Furnace Top Gas Recovery Turbine Unit (TRT) is different, its series connection be one by one capacitor, circuit is open, and is not closed, the potential difference that is caused by work function not only can not disappear, and can superpose on the contrary.But can directly not produce the such continuous current of closed circuit in open, inc circuit, it can only be with capacitor charging and discharge type generation pulse current, and then is converted into other needed current forms and is used.The contacting capacitor rechargeable energy derives from the heat energy in the normal temperature object.At normal temperatures, because the difference of work function, the contact potential difference that causes will make electronics move, and reach new balance, make capacitor be in charged state.The energy of the capacitor of charging is discharged with the form of electricity, so just the heat energy of normal temperature object has been converted into available electric energy.

Claims (2)

1, a kind of semiconductor Blast Furnace Top Gas Recovery Turbine Unit (TRT) that heat energy is directly changed into electric energy, though semiconductor thermo-electric generation apparatus also can be in closed circuit and change heat energy into electric energy in the prior art, but efficient is lower, the present invention is different, it is characterized in that utilizing open electric circuit, what connect is the capacitor that oozes assorted N type semiconductor and P type semiconductor composition with high, the N utmost point of semiconductor capacitor X links to each other with the negative pole of tunnel diode a, the positive pole of tunnel diode a extremely links to each other with the P of semiconductor capacitor Y, the N utmost point of semiconductor capacitor Y links to each other with the negative pole of tunnel diode b, the positive pole of tunnel diode b links to each other with the P pole plate of semiconductor capacitor X, insert controllable silicon KD1 between the C point of the N pole plate of capacitor X and metal discharge capacitor Z, the D point of the P pole plate of capacitor X and metal discharge capacitor Z inserts controllable silicon KD2, the D point of the N pole plate of capacitor Y and discharging capacitor Z inserts controllable silicon KD3, insert controllable silicon KD4 between the C point of the P pole plate of capacitor Y and discharging capacitor Z, the program of control is while conducting KD1 and KD2, turn-off again while conducting KD3 and KD4 then, turn-off then, move in circles, in capacitor charging and discharge process, the heat energy of normal temperature object is converted into available pulse current.

2, contact semiconductor-capacitor pulse power generator according to claim 1 is characterized in that this Blast Furnace Top Gas Recovery Turbine Unit (TRT) when when work is converted into electric energy to the heat in the normal temperature object, can cool off surrounding environment voluntarily.

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