CN1276302C - Structure of phase shifting mask - Google Patents
Structure of phase shifting mask Download PDFInfo
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- CN1276302C CN1276302C CNB031216528A CN03121652A CN1276302C CN 1276302 C CN1276302 C CN 1276302C CN B031216528 A CNB031216528 A CN B031216528A CN 03121652 A CN03121652 A CN 03121652A CN 1276302 C CN1276302 C CN 1276302C
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- penetrance
- mutually
- transferring
- control band
- zone
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Abstract
A phase shifting mask is disclosed in this present invention. The above-mentioned phase shifting mask comprises a quartz layer and a plurality of transmission adjustor layer onto the quartz layer. By employing the above-mentioned phase shifting mask, the material of the transmission adjustors has not to be changed with the light source. Furthermore, the contrast of the phase shifting mask of this invention is better than the contrast of the binary mask and the half-tone mask in the prior art. Therefore, this invention provides a more efficient mask, and the phase shifting mask according to this present invention can improve the resolution in photolithography.
Description
(1) technical field
The relevant a kind of structure of transferring light shield mutually of the present invention, particularly relevant a kind of structure of transferring light shield mutually with chromium (chrome).
(2) background technology
Micro-photographing process has been played the part of a considerable role in manufacture of semiconductor, and light shield is a most important ring in the micro-photographing process.In the prior art, dual intensity light shield (binary intensity mask; BIM) be a kind of light shield that has been widely used in the processing procedure.With reference to Figure 1A, the dual intensity light shield comprises one deck quartz layer 100, with the many groups of chromium zones 110 that are positioned on the quartz layer 100.The light that described chromium zone 110 will be blocked from employed light source sent in the micro-photographing process.In other words, the penetrance in chromium zone 110 is 0%, and the penetrance in the zone 120 of non-chromium is 100% on quartz layer 100.Figure 1B is the electric-field intensity distribution figure that passes the light of described dual intensity light shield.Fig. 1 C is the light intensity distributions figure of light on a wafer that passes described dual intensity light shield.
Another kind of well-known technology is to transfer light shield (phase shifting mask) mutually.Transfer light shield mutually and be widely used in the into micro-photographing process on rank (advanced photol ithography).Fig. 2 A is that a kind of half-penetration type is transferred light shield (half-tone phase shifting mask) mutually.Described half-penetration type is transferred light shield mutually and is comprised one deck quartz layer 200 and many group phase shift layers (shifter) 210.The phase differential (phase difference) that light passes behind phase shift layer 210 and the non-phase shift layer 220 on the quartz layer 200 can be 90 °, 180 ° or 270 °.The penetrance of described phase shift layer 210 is about 3% to 20%, and the penetrance of the non-phase shift layer 220 on described quartz layer 200 is 100%.Fig. 2 B passes the described electric-field intensity distribution figure that transfers the light of light shield mutually.Fig. 2 C passes the described light intensity distributions figure of light on a wafer that transfers light shield mutually.
Along with the reduction of live width permission (line width tolerance), the application of transferring light shield mutually is also more and more important.But, in the prior art, for different ripples different absorption characteristics is often arranged owing to transfer the material of light shield mutually, so the material of transferring light shield mutually can't be applicable to the light source of different wave length simultaneously.Consequently, in the development of micro-photographing process, must constantly seek suitable phase shift layer material.Yet, in micro-photographing process, how to seek out a kind of change light source after can to reach desired phase differential and layer material of transfer mutually that penetrance requires be a not only loaded down with trivial details but also difficult job.
Therefore, a kind of material that does not need to change phase shift layer, and the light shield of transferring mutually that can satisfy different penetrances and the requirement of phase differential is an important problem along with the change of light source in order to improve the efficient of micro-photographing process, how to develop.
(3) summary of the invention
In described background of invention, prior art is being transferred the many shortcomings that occurred aspect the light shield mutually, and fundamental purpose of the present invention is to provide a kind of light shield of transferring mutually, makes need not change the material of transferring light shield mutually when changing light source in micro-photographing process.
Another object of the present invention is to provide a kind of light shield of transferring mutually, make the described light shield of transferring mutually can satisfy needed phase differential in manufacture of semiconductor.
Another purpose of the present invention is to provide a kind of light shield of transferring mutually, makes the described light shield of transferring mutually can satisfy needed penetrance in manufacture of semiconductor.In other words, can adjust the penetrance of transferring light shield mutually by changing the form of transferring the penetrance control band on the light shield mutually of the present invention.
A further object of the present invention is to provide a kind of light shield of transferring mutually, by promoting the described contrast (contrast) of transferring light shield mutually, can promote the resolution (resolution) of micro-photographing process.
According to a kind of photomask structure of transferring mutually of the present invention, be characterized in comprising: a ground, this ground have the recessed zone of many groups and many group raised zones; Reach many group penetrance control bands and be positioned on this raised zones, wherein each this penetrance control band comprises to organize shaded areas and many group transparent regions more, and adjusts penetrance by the interval of change transparent region with distribution.
The light shield of transferring mutually of the present invention comprises one deck quartz layer and the penetrance control bands that are positioned on the quartz layer of organizing more.The penetrance of described penetrance control band can reach needed penetrance in manufacture of semiconductor via described penetrance control band is carried out suitable adjustment.The light shield of transferring mutually of the present invention need not change along with the light source in the micro-photographing process and changes the material of transferring light shield mutually.In addition, the described light shield of transferring mutually has than dual intensity light shield of the prior art and transfers the light shield better contrast mutually with half-penetration type.So the present invention can provide a kind of more efficient light shield of transferring mutually, and then can promote the resolution of micro-photographing process.
(4) description of drawings
Described purpose of the present invention and advantage will be described below in detail with following embodiment and diagram, wherein:
Figure 1A is a synoptic diagram according to the dual intensity light shield of prior art;
Figure 1B is the electric-field intensity distribution figure after light passes the dual intensity light shield of Figure 1A;
Fig. 1 C is the back light intensity distributions figure on wafer of the light dual intensity light shield that passes Figure 1A;
Fig. 2 A one transfers the synoptic diagram of light shield mutually according to the half-penetration type of prior art;
Fig. 2 B be half-penetration type that light passes Fig. 2 A transfer mutually light shield after electric-field intensity distribution figure;
Fig. 2 C is the back light intensity distributions figure on wafer that half-penetration type that light passes Fig. 2 A is transferred light shield mutually;
Fig. 3 A is one according to the synoptic diagram of transferring light shield mutually of the present invention;
Fig. 3 B be light pass Fig. 3 A transfer mutually light shield after electric-field intensity distribution figure;
Fig. 3 C is the back light intensity distributions figure on wafer that transfers light shield mutually that light passes Fig. 3 A;
Fig. 4 A is one according to the vertical view of transferring the penetrance control band of light shield mutually of the present invention;
Fig. 4 B is that another is according to the vertical view of transferring the penetrance control band of light shield mutually of the present invention;
Fig. 4 C is that another is according to the vertical view of transferring the penetrance control band of light shield mutually of the present invention; And
Fig. 4 D is that another is according to the vertical view of transferring the penetrance control band of light shield mutually of the present invention.
(5) embodiment
Some embodiments of the present invention are described in detail as follows.Yet except describing in detail, the present invention can also be widely implements at other embodiment, and scope of the present invention do not limit by it, and it is to be as the criterion with appended claim restricted portion.
In addition, in this manual, the different piece of semiconductor element is not drawn according to size.Some yardstick is compared with other scale dependents and is exaggerated, so that clearer description and understanding of the present invention to be provided.
A preferred embodiment of the present invention is a kind of structure with light shield of transfer mutually (chrome phaseshifting mask) of chromium.The described light shield of transferring mutually comprises one deck ground, and (transmission adjustor) is positioned on the described quartz layer with many groups penetrance control band.Described ground can be one deck quartz layer.Described quartz layer comprises many group raised zones and the recessed zone of many groups.Described penetrance control band is positioned on the raised zones of quartz layer.The composition of penetrance control band comprises chromium.Each penetrance control band comprises many group transparent regions.Described transparent region can be non-chromium zone (non-chromeareas).Described non-chromium zone can be square, linear, circular or other geometric configuration.
In the recessed zone of quartz layer, what the etch depth of quartz layer (etched depth) can be used for adjusting present embodiment transfers phase differential in the light shield mutually.After light passed quartz layer, the phase differential between described raised zones and recessed zone can be 90 °, 180 ° or 270 °.The penetrance of described penetrance control band can be adjusted with distribution mode by the interval that changes described non-chromium zone.The penetrance of penetrance control band can be 3% to 20%.Therefore, the material of described penetrance control band can be used different materials along with the light source change of micro-photographing process.In addition because the light shield of transferring mutually of present embodiment has preferable contrast in micro-photographing process, so, present embodiment transfer the resolution that light shield can promote micro-photographing process mutually.
Another preferred embodiment of the present invention is a kind of structure of transferring light shield mutually.With reference to figure 3A, the described light shield of transferring mutually comprises a quartz layer 300, is positioned on the quartz layer 300 with many groups penetrance control band 320.Quartz layer 300 has the recessed zone 310 of many groups and many group raised zones 315.The degree of depth L in recessed zone 310 can be used for being adjusted at the phase differential between recessed zone 310 and the raised zones 315.That is to say that the degree of depth L by changing recessed zone 310 can be set at the phase differential between recessed regional 310 in present embodiment and the raised zones 315 90 °, 180 ° or 270 °.
Each penetrance control band comprises many group shaded areas (block region) 330 and many group transparent regions (transparent region) 340.In the present embodiment, the composition of shaded areas 330 comprises chromium, and transparent region 340 can be non-chromium zone.Penetrance at penetrance control band 320 can be adjusted with set-up mode by the interval that changes transparent region 340.The penetrance of penetrance control band 320 can be 1% to 30%.Be more preferably, the penetrance of penetrance control band 320 can be 3% to 20%.
In the present embodiment, the light source of transferring light shield mutually and being suitable for comprises I-line laser (I-line laser), KrF laser, ArF laser, and other light sources that may use in micro-photographing process.In the prior art, have different absorptions for different wavelength owing to transfer the material of phase shift layer in the light shield (shifter) mutually, so, the possibly light source that can't be applicable to many different wave lengths simultaneously of light shield of transferring mutually of the prior art.Therefore, in the development and improved process of the micro-photographing process in each generation, must constantly research and develop the material of the phase shift layer that makes new advances for different light sources, to reach desired phase differential or penetrance in the micro-photographing process.Yet in the present embodiment, the material of penetrance control band 320 need not change to some extent along with the change of light source.When light source changes, can be by changing shaded areas 330 and the interval of transparent region 340 and the penetration that form obtains suitable penetrance control band 320.
In addition, the light shield of transferring mutually of present embodiment has than light shield and the higher contrast of dual intensity light shield transferred mutually of the prior art.Fig. 3 B is the electric-field intensity distribution figure after light passes present embodiment.Fig. 3 C is that light passes the light intensity distributions figure on wafer behind the present embodiment.Shown in Fig. 3 B and Fig. 3 C, the light shield of present embodiment can produce node (node point) (intensity is zero), therefore, can promote the contrast of image, thereby can improve the resolution of micro-photographing process.In the result of a test, be 0.78 according to the contrast of transferring light shield mutually of present embodiment.In identical test, the contrast of dual intensity light shield is 0.63, and half-penetration type to transfer the contrast of light shield mutually be 0.75.Change speech, the light shield of transferring mutually in the present embodiment has than dual intensity light shield of the prior art and half-penetration type and to transfer the higher contrast of light shield mutually.Therefore, in micro-photographing process, can show better resolution according to the light shield of transfer mutually of present embodiment.
On the other hand, in the present embodiment, the shaded areas 330 and the transparent region 340 of penetrance control band 320 can be various geometric figures.For instance, Fig. 4 A can be a kind of vertical view of penetrance control band 320.Shown in Fig. 4 A, penetrance control band 320 can be a kind of form of chessboard, and wherein the white square on the chessboard 410 can be the non-chromium zone 340 in the present embodiment, and the black lattice 420 on the chessboard can be the shaded areas 330 of the chromium that contains in the present embodiment.In another example, shaded areas 330 on the penetrance control band can be the form of a similar screen window with the set-up mode of transparent region 340, shown in Fig. 4 B, wherein the part 430 of black line can be the shaded areas 330 in the present embodiment, and the white block 440 between black line can be the transparent region 340 in the present embodiment.In another example, the arrangement mode of shaded areas 330 and transparent region 340 can be many straight lines shown in Fig. 4 C, and wherein black line part 450 can be a shaded areas 330, and white line part 460 can be a transparent region 340.In another example, penetrance control band 320 can be shown in Fig. 4 D, and wherein the part 470 of black is described shaded areas 330, and the circular portion 480 of white can be described transparent region 340.Except that this, the shaded areas 330 in the described penetrance control band 320 and the set-up mode of transparent region 340 also can be other geometric configuratioies.No matter shaded areas 330 and transparent region 340 are the arrangement modes with what geometric configuration, the penetrance of penetrance control band 320 still can be adjusted in the shaded areas 330 of penetrance control band 320 and the interval between the transparent region 340 by changing.
Comprehensive the above, the present invention has disclosed a kind of structure of transferring light shield mutually.The described light shield of transferring mutually comprises the quartz layers with the recessed zone of many groups and raised zones, and many group penetrance control bands are positioned at described raised zones.The degree of depth in the female zone can be used for being adjusted at the phase differential between recessed zone and the raised zones.In the present invention, each penetrance control band comprises many group shaded areas and many group transparent regions, to adjust the penetrance of penetrance control band.The penetrance of described penetrance control band is about 3% to 20%, and passes the phase differential of the light of the recessed zone of quartz layer and raised zones, according to the degree of depth in the recessed zone of quartz layer, can be 90 °, 180 ° or 270 °.According to the present invention, the material of transferring the penetrance control band of light shield mutually can change to some extent along with the change of light source.In addition, the result from test learns that the light shield of transferring mutually of the present invention has than dual intensity light shield of the prior art and half-penetration type and transfers the higher contrast of light shield mutually.So the present invention can provide a kind of more efficient light shield, and the light shield of transferring mutually according to the present invention can significantly be lifted at resolution in the micro-photographing process.
The above is preferred embodiment of the present invention only, is not in order to limit claim of the present invention; All other do not break away from equivalence change or the equivalence finished under the disclosed spirit to be replaced, and all should be included in the following claim institute restricted portion.
Claims (20)
1. transfer photomask structure mutually for one kind, it is characterized in that, comprise:
One ground, this ground have the recessed zone of many groups and many group raised zones; And
Many group penetrance control bands are positioned on this raised zones, and wherein each this penetrance control band comprises to organize shaded areas and many group transparent regions more, and adjusts penetrance by the interval of change transparent region with distribution.
2. the photomask structure of transferring mutually as claimed in claim 1 is characterized in that this ground is a quartz layer.
3. the photomask structure of transferring mutually as claimed in claim 1 is characterized in that the composition of this penetrance control band comprises chromium.
4. the photomask structure of transferring mutually as claimed in claim 1 is characterized in that, this transparent region is non-chromium zone.
5. the photomask structure of transferring mutually as claimed in claim 1 is characterized in that the penetrance of this penetrance control band is 1% to 30%.
6. the photomask structure of transferring mutually as claimed in claim 1 is characterized in that, this penetrance control band and the phase differential that should be recessed between the zone are 180 °.
7. the photomask structure of transferring mutually as claimed in claim 1 is characterized in that, this transparent region is a geometric figure at the configuration mode of each penetrance control band.
8. the photomask structure of transferring mutually as claimed in claim 2 is characterized in that the composition of this shaded areas comprises chromium.
9. the photomask structure of transferring mutually as claimed in claim 2 is characterized in that, this transparent region is non-chromium zone.
10. the photomask structure of transferring mutually as claimed in claim 2 is characterized in that the penetrance of this penetrance control band is 3% to 20%.
11. the photomask structure of transferring mutually as claimed in claim 2 is characterized in that, this penetrance control band and the phase differential that should be recessed between the zone are 90 °.
12. the photomask structure of transferring mutually as claimed in claim 2 is characterized in that, this penetrance control band and the phase differential that should be recessed between the zone are 180 °.
13. the photomask structure of transferring mutually as claimed in claim 2 is characterized in that, this penetrance control band and the phase differential that should be recessed between the zone are 270 °.
14. the photomask structure of transferring mutually as claimed in claim 2 is characterized in that the configuration mode of this transparent region is a geometric figure.
15. the photomask structure of transferring mutually as claimed in claim 1 is characterized in that each this penetrance control band has many group chromium zone and the non-chromium of many groups zone.
16. the photomask structure of transferring mutually as claimed in claim 15 is characterized in that the penetrance of this penetrance control band is 3% to 20%.
17. the photomask structure of transferring mutually as claimed in claim 15 is characterized in that, this penetrance control band be 180 ° with the phase differential that should be recessed into the zone.
18. the photomask structure of transferring mutually as claimed in claim 15 is characterized in that, this penetrance control band be 90 ° with the phase differential that should be recessed into the zone.
19. the photomask structure of transferring mutually as claimed in claim 15 is characterized in that, this penetrance control band be 180 ° with the phase differential that should be recessed into the zone.
20. the photomask structure of transferring mutually as claimed in claim 15 is characterized in that, this non-chromium zone is a geometric figure with the configuration mode in this chromium zone.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/190,197 | 2002-07-03 | ||
| US10/190,197 US6866967B2 (en) | 2002-06-28 | 2002-07-03 | Structure of phase shifting mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1467565A CN1467565A (en) | 2004-01-14 |
| CN1276302C true CN1276302C (en) | 2006-09-20 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031216528A Expired - Lifetime CN1276302C (en) | 2002-07-03 | 2003-03-13 | Structure of phase shifting mask |
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| Country | Link |
|---|---|
| CN (1) | CN1276302C (en) |
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2003
- 2003-03-13 CN CNB031216528A patent/CN1276302C/en not_active Expired - Lifetime
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| Publication number | Publication date |
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| CN1467565A (en) | 2004-01-14 |
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