CN1276125C - 用于金属有机化学气相沉积设备的楔形反应管 - Google Patents
用于金属有机化学气相沉积设备的楔形反应管 Download PDFInfo
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- CN1276125C CN1276125C CN 200410017929 CN200410017929A CN1276125C CN 1276125 C CN1276125 C CN 1276125C CN 200410017929 CN200410017929 CN 200410017929 CN 200410017929 A CN200410017929 A CN 200410017929A CN 1276125 C CN1276125 C CN 1276125C
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- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 12
- 239000002184 metal Substances 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims abstract description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 26
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 10
- 239000010439 graphite Substances 0.000 claims abstract description 10
- 230000006698 induction Effects 0.000 claims abstract description 8
- 230000003028 elevating effect Effects 0.000 claims abstract description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- 230000001154 acute effect Effects 0.000 claims description 3
- 239000002826 coolant Substances 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 239000007789 gas Substances 0.000 abstract description 23
- 239000000463 material Substances 0.000 abstract description 7
- 239000010453 quartz Substances 0.000 abstract 2
- 230000002349 favourable effect Effects 0.000 abstract 1
- 239000000376 reactant Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN 200410017929 CN1276125C (zh) | 2004-04-20 | 2004-04-20 | 用于金属有机化学气相沉积设备的楔形反应管 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN 200410017929 CN1276125C (zh) | 2004-04-20 | 2004-04-20 | 用于金属有机化学气相沉积设备的楔形反应管 |
Publications (2)
Publication Number | Publication Date |
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CN1563484A CN1563484A (zh) | 2005-01-12 |
CN1276125C true CN1276125C (zh) | 2006-09-20 |
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CN 200410017929 Expired - Lifetime CN1276125C (zh) | 2004-04-20 | 2004-04-20 | 用于金属有机化学气相沉积设备的楔形反应管 |
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CN (1) | CN1276125C (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20060103640A (ko) * | 2005-03-28 | 2006-10-04 | 삼성전자주식회사 | 반도체 제조장치 |
CN101403108B (zh) * | 2008-08-04 | 2012-05-02 | 李刚 | 化学气相淀积反应器和化学气相淀积方法 |
CN101736322B (zh) * | 2009-02-10 | 2012-05-23 | 李刚 | 化学气相淀积反应器 |
CN102534543A (zh) * | 2012-02-22 | 2012-07-04 | 上海大学 | 一种化学气相沉积制备钨的方法及其装置 |
CN103243311A (zh) * | 2013-05-16 | 2013-08-14 | 合肥彩虹蓝光科技有限公司 | 一种垂直进气和水平进气在基片表面正交的气体输运反应腔体 |
KR101722915B1 (ko) * | 2014-10-13 | 2017-04-04 | 주식회사 테스 | 유기금속화학기상증착장치 |
CN109306473A (zh) * | 2018-11-27 | 2019-02-05 | 湖南顶立科技有限公司 | 一种气相沉积炉 |
CN113173799B (zh) * | 2021-04-28 | 2022-05-10 | 嵊州市西格玛科技有限公司 | 一种碳/碳复合材料生产系统及方法 |
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2004
- 2004-04-20 CN CN 200410017929 patent/CN1276125C/zh not_active Expired - Lifetime
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CN1563484A (zh) | 2005-01-12 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: NANCHANG HUANGLV LIGHTING CO., LTD. Free format text: FORMER OWNER: NANCHANG UNIVERSITY Effective date: 20121226 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20121226 Address after: 330029 Jiangxi high tech Zone, Nanchang hi tech Road, No. seven, No. 192 Patentee after: NANCHANG HUANGLYU LIGHTING CO.,LTD. Address before: 330029 No. 235 East Nanjing Road, Jiangxi, Nanchang Patentee before: Nanchang University |
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CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: Annex building 2, engineering technology research center, No. 679, aixihu North Road, Nanchang high tech Industrial Development Zone, Nanchang City, Jiangxi Province Patentee after: NANCHANG GUIJI SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Address before: 330029 No. seven, No. 192, hi tech Zone, Nanchang hi tech Zone, Jiangxi Patentee before: NANCHANG HUANGLYU LIGHTING Co.,Ltd. |
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CX01 | Expiry of patent term |
Granted publication date: 20060920 |
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CX01 | Expiry of patent term |