CN1275798A - Long-wave electricity-limiting adjustable infrared pick-up target - Google Patents
Long-wave electricity-limiting adjustable infrared pick-up target Download PDFInfo
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- CN1275798A CN1275798A CN 99108225 CN99108225A CN1275798A CN 1275798 A CN1275798 A CN 1275798A CN 99108225 CN99108225 CN 99108225 CN 99108225 A CN99108225 A CN 99108225A CN 1275798 A CN1275798 A CN 1275798A
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Abstract
The present invention relates to a long wavelength threshold regulated infrared camera target prepared with semiconductor for potoelectric equipment, and is characterized by using semiconductor silicone (or germanium) material with high impedance as substrate, adopting the process of oxidation, photoetching and diffusion to form collecting zone, and repeated oxidation, photoetching and diffusion to form base zone and very thin emitting zone to form photosensitive unit with N+PN-structure, integrating several photosensitive unit arrays and sequential circuit on same semiconductor chip to form the invented infrared camera target, and regulating external voltage to make long wavelength threshold change so as to obtain the effect of collecting colour information. It is stable in performance, and is an ideal device for infrared remote sensing and remote measuring technology.
Description
The present invention relates to a kind of long-wave electricity-limiting adjustable infrared pick-up target that adopts semi-conducting material to form through the related process processing and preparing, this camera target can be by applying external voltage influence long wavelength threshold to the photoresponse of each image unit in the relative broad range field regulate, thereby the colour to infrared imagery is differentiated, and makes each image unit all can possess the effect of gathering the infrared colour information of imaging point different spectral.
Existing infrared pick-up target mainly is divided into infrared light subtype camera target and thermal imaging type camera target two big classes.Infrared light subtype camera target is owing to reasons such as its structure and materials, though possess characteristics such as highly sensitive, that the response time is fast, preparation is finished but this class device adopts existing technology, the long wavelength threshold of its photoresponse is a determined value just, can't change its long wavelength threshold by the variation that applies external circuit voltage, can not measure the Wavelength distribution characteristic of infrared image, that is to say the spectral distribution that to distinguish by photometry, thereby its range of application limited to, and especially can't satisfy the demand that further develops of photoelectric technology; Though existing thermal imaging camera target has the characteristics of the reception optical wavelength of broad, but its sensitivity and time response effect relatively poor, device self does not possess chromatic discrimination power, although can form complementary pluses and minuses with the photon type camera target, but still can not satisfy the demand that photoelectric technology develops, especially be difficult to adapt to the demand for development of infrared remote sensing in modern age, telemetry.
The objective of the invention is to overcome that existing long wavelength threshold can not change with applied voltage in the existing infrared pick-up target technology, thereby can not distinguish the outstanding shortcoming of look etc., device involved in the present invention adopts conventional semi-conducting material to be prepared into a kind of infrared pick-up target that changes the long wavelength threshold of device by the easy adjusting of additional circuit voltage through processing technology.
In order to realize the foregoing invention purpose, infrared pick-up target described in the invention, its basic photosensitive unit is one three layers a semiconductor structure, its geometry is close with conventional transistor, ground floor is infrared Absorption district (being comparable to the emitter region of triode on the geometry), absorb infrared light, and make the electronics (if device architecture is the NPN type) in this layer transit to upper state (intraband transition); All be comparable to the base of triode on second layer structure and the principle, form the barrier region, change voltage between layers and can change barrier height, that is changed threshold values energy by the electronics in this district with the ground floor semiconductor; The 3rd layer is collecting region, all be comparable to the collector region of triode on structure and the principle, collection is by can be greater than the getting over into the second layer and be that the high potential barrier of two, three interlayer reverse voltages sweeps the electronics in the 3rd layer of one, two layer of barrier height on infrared ray excited (ground floor) and the energy, provide a kind of thus and the incident infrared light in energy greater than one, two layer of corresponding current source of barrier height photon total amount.Architectural characteristic point of the present invention is ground floor, should accomplish fully to absorb the incident infrared light, accomplish at this layer self-energy relaxation low as far as possible again, when guaranteeing to enter the border, barrier region, electron energy does not have bigger reduction, this layer need are made quite thinly for this reason, and possible selection has: heavily doped N type semiconductor (homogeneity), polycrystalline or amorphous or M-S solid solution (heterogeneous).First potential barrier is also extremely important, also need enough to approach based on above-mentioned consideration barrier region, thereby the second layer (P district) should have very high doping content, the 3rd layer fairly simple, close with conventional triode collecting region, but, then need consider to reduce optical loss if considering incident light injects from the 3rd layer as far as possible.
Content of the present invention is to adopt conventional semi-conducting material and corresponding technology processing and preparing photoelectric camera as array, selecting the high impedance semi-conducting material is substrate, through peroxidating, photoetching and carry out low concentration doping agent diffusion and form collecting region (being the C district), forming emitter region (being E district) as thin as a wafer after through repeatedly oxidation, photoetching, diffusion on the collecting region and be similar to the base (being the B district) of conventional transistor base again, thus formation N
+PN
-The photosensitive unit of structure, again with conventional integrated technique will be integrated in by the infrared pick-up unit compatible preparation sequence circuit that several photosensitive units are formed form long wavelength threshold on the same semiconductor chip can be with the infrared pick-up target of external voltage adjusting.Prepared photosensitive unit, its emitter region can be highly doped silicon crystal as thin as a wafer, also can adopt the silicon alloy of noble metal or highly doped polycrystalline or monocrystalline.
The present invention compares with existing infrared pick-up target, has the ripe advantages such as the device long wavelength threshold can be regulated by applied voltage because of its design feature and simple, and the camera target of preparation has stable performance, reliable, and long wavelength threshold is conveniently adjusted of processing and preparing technology.
Fig. 1 is the present invention's photosensitive unit theory structure schematic diagram.
The present invention adopts ripe silicon materials and corresponding silicon microelectronic processing technology to prepare photoelectric camera as array.The preparation of photosensitive unit can be finished with the following method among the present invention: selecting high resistant P type semiconductor material is substrate.Through oxidation, photoetching and carry out low concentration N type diffuse dopants, form collecting region (being the C district) 1, in the C district, form emitter region (being the E district) 2 and base (being the B district) 3 respectively again through repeated multiple times oxidation, photoetching, diffusion, emitter region 2 even can be the highly doped silicon crystal silicon alloy that also can be noble metal (for first potential barrier under the noble alloy situation is a Schottky barrier) or highly doped polycrystalline or amorphous, the so N that forms wherein
+PN
-Structure is photosensitive unit of the present invention.It is substrate that the invention process also can be selected very low-doped N type semiconductor material, again with being similar to the photosensitive unit that above-mentioned prepared forms positive-negative-positive structure (or MNP structure).
The outer biasing that changes first knot can change the barrier height of first knot.When the infrared light of imaging is launched emitter region 2 in photosensitive unit, the part majority carrier energy of emitter region is increased, its energy is during greater than first potential barrier, this part charge carrier can be getted over potential barrier and enter base 3, collected by anti-inclined to one side collecting region 1 at last, the outer biasing that changes first knot can change the first junction barrier height, also can make to have only energy to get over potential barrier and finally collected for the C district greater than the emitter region charge carrier of this barrier height.The strong and weak ratio of C district collected current is in the photon stream of incident infrared photon energy greater than the barrier height part, that is the C district electric current under the different biasing can reflect the above electronic flow of different long wavelength threshold energy that is incident in the C district.Some photosensitive units are integrated in can obtain a complete infrared colour information image simply on the same silicon chip.
The scanning of photosensitive unit can realize in shift register, CCD or the combination of other sequence circuits by being integrated in same silicon chip, and is compatible fully because the manufacturing process of photosensitive unit has been considered with silicon sequence circuit manufacturing process such as shift register.
Long-wave electricity-limiting adjustable infrared pick-up target of the present invention can be prepared into near-infrared or far infrared or cover long-wave electricity-limiting far away, the near-infrared field regulates the infrared photography target, can obtain the very infrared coloured image of abundant subject of amount of information with its ir imaging system of forming for core, possess application prospects.
Claims (2)
1, a kind of long-wave electricity-limiting adjustable infrared pick-up target that adopts conventional semi-conducting material and corresponding process technology to be prepared from, it is characterized in that selecting the high impedance semi-conducting material is substrate, through oxidation, photoetching and carry out low concentration doping agent diffusion and form collecting region, after repeatedly oxidation, photoetching, diffusion, form emitter region and base on the collecting region again, thereby constituting N
+PN
-The photosensitive unit of structure or positive-negative-positive structure or MNP structure will be integrated on the same semiconductor chip by the infrared pick-up unit compatible preparation sequence circuit that several photosensitive units are formed and form infrared pick-up target.
2, long-wave electricity-limiting adjustable infrared pick-up target according to claim 1, it is characterized in that making a video recording photosensitive unit the emitter region as thin as a wafer, be highly doped silicon single crystal, also can adopt the silicon alloy of noble metal or highly doped polycrystalline or monocrystalline, can regulate the long wavelength threshold of the photoresponse of each image unit by external voltage, and possess the effect of gathering the infrared colour information of imaging point different spectral.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 99108225 CN1275798A (en) | 1999-05-31 | 1999-05-31 | Long-wave electricity-limiting adjustable infrared pick-up target |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 99108225 CN1275798A (en) | 1999-05-31 | 1999-05-31 | Long-wave electricity-limiting adjustable infrared pick-up target |
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| CN1275798A true CN1275798A (en) | 2000-12-06 |
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| CN 99108225 Pending CN1275798A (en) | 1999-05-31 | 1999-05-31 | Long-wave electricity-limiting adjustable infrared pick-up target |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104518012A (en) * | 2013-09-30 | 2015-04-15 | 天钰科技股份有限公司 | Triode |
-
1999
- 1999-05-31 CN CN 99108225 patent/CN1275798A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104518012A (en) * | 2013-09-30 | 2015-04-15 | 天钰科技股份有限公司 | Triode |
| CN104518012B (en) * | 2013-09-30 | 2017-12-12 | 天钰科技股份有限公司 | Triode |
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