CN1271965A - Algalnp series luminous diode and epitaxial wafer used for making said diode - Google Patents
Algalnp series luminous diode and epitaxial wafer used for making said diode Download PDFInfo
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- CN1271965A CN1271965A CN00108101.2A CN00108101A CN1271965A CN 1271965 A CN1271965 A CN 1271965A CN 00108101 A CN00108101 A CN 00108101A CN 1271965 A CN1271965 A CN 1271965A
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- 239000010410 layer Substances 0.000 claims description 247
- 239000011229 interlayer Substances 0.000 claims description 131
- 150000001875 compounds Chemical class 0.000 claims description 40
- 239000004065 semiconductor Substances 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 24
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 14
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims 1
- 238000005036 potential barrier Methods 0.000 abstract description 12
- 238000003780 insertion Methods 0.000 abstract description 3
- 230000037431 insertion Effects 0.000 abstract description 3
- 238000005253 cladding Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 description 15
- 238000009792 diffusion process Methods 0.000 description 14
- 238000002360 preparation method Methods 0.000 description 13
- 238000004458 analytical method Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 238000004020 luminiscence type Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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Abstract
A high potential barrier is prevented from being formed on a hetero-boundary surface between a p-type AlGaInP cladding layer and a p-type GaP window layer by forming an insertion layer having a smaller band gap energy than that of the p-type AlGaInP cladding layer therebetween. The insertion layer serves as a forward voltage reducing layer, and the forward voltage of a LED is lowered.
Description
The present invention relates to wavelength and be 650nm (red) to the AlGaInP series LED of 550nm (yellowish green zone) and be used for the epitaxial wafer of this light-emitting diode.
Recently, the light-emitting diode (following note is made LED) to the high brightness AlGaInP of red-emitting or gold-tinted system has very big demand.Above-mentioned diode can be used for various various objectives, as traffic control signal, and automobile tail light or fog lamp, and full-color display.
It is that the AlGaInP of 590nm is the structure of the conventional epitaxial wafer of LED that Fig. 1 represents to be used to make emission wavelength.
The preparation method of the epitaxial wafer of LED shown in Figure 1 is one deck n type GaAs resilient coating 2a that grows in succession, one deck n type (Al on n type GaAs substrate 1a
0.7Ga
0.3)
0.5In
0.5 P interlayer 3a, one deck last doping (Al
0.1Ga
0.9)
0.5In
0.5The P active layer, one deck P type (Al
0.7Ga
0.3)
0.5In
0.5 P interlayer 5a and one deck P type GaP Window layer 6a.
The epitaxial loayer of all 2a-6a all is to grow with metal organic vapor phase epitaxy growth (making MOVPE with postscript) method, although the Al ratio of component also is used as the Window layer of LED sometimes greater than 0.6 AlGaAs layer, but this Window layer is unsuitable for the light that transmission is efficiently launched, and is easy to wear out.Consider from this point, because the wide and oxidation resistant character of band gap of GaP, so the GaP layer is more suitable in making Window layer.
But the GaP Window layer has following problems.
Fig. 2 explanation is near the band structure the heterogeneous interface between P type Window layer 6A and the P type AlGaIn interlayer 5a in the LED epitaxial loayer of AlGaInP system, and wherein the arrow among Fig. 2 is illustrated in and it is added under the forward voltage situation direction of motion in electropositive hole.
Because the electron affinity between P type interlayer 5a and Window layer 6a is poor, at P type GaP Window layer and P type (Al
0.7Ga
0.3)
0.5In
0.5Form high potential barrier (discontinuity that can be with) on the heterogeneous interface of P interlayer, the potential barrier that wherein is shown in expression in the dashed circle B is stoping the motion in electropositive hole.When LED is subjected to encouraging, this potential barrier become stop the electropositive hole from P type Window layer 6a to P type (Al
0.7Ga
0.3)
0.5In
0.5The principal element of P interlayer 5a motion.Therefore, the forward voltage of LED (operating voltage, promptly working as impressed current is under the situation of 20mA, is added in the voltage on the LED) uprises.In general, when forward voltage increased, the reliability of LED reduced.Adopting P type GaP to do among the LED of Window layer 6a, reducing forward voltage will be an important topic.
Fig. 3 represents to be used to make the another kind of conventional epitaxial wafer that AlGaInP is LED.
The light emitted wavelength of LED with epitaxial wafer preparation shown in Figure 3 is 590nm.This epitaxial wafer is the growth of MOVPE method, the following epitaxial loayer preparation of growth in succession on n type GaAs substrate: one deck n type GaAs resilient coating 2b, one deck is doped with the n type AlGaInP interlayer 3b of Si or Se, the unadulterated AlGaInP active layer of one deck 4b, one deck mix the P type AlGaInP interlayer 5b of Zn and P type GaP Window layer 6b that one deck is mixed Zn.
A problem as relevant with common process should be mentioned in that a kind of phenomenon, and promptly the Zn as P type alloy spreads to the abnormality of the heterogeneous interface of adjoining course.
(1) owing to expand to the direction of chip surface, need Window layer 6b to have the P type charge carrier (about 5 * 10 of high concentration for the electric current that electrode is provided
18Cm
-3), so Window layer 6b is mixed with the Zn of high concentration.
(2) in order to encourage above-mentioned extend current, Window layer 6b need grow into the above thickness of 0.5 μ m, so its growth time can prolong.
(3) for the concentration of the oxygen that reduced the impurity effect, the epitaxial wafer layer that is used to make AlGaInP and is LED generally all is to grow under the growth temperature more than 650 ℃.
Because above-mentioned three factors, when the growing epitaxial sheet, because the thermal excitation that adds, Zn is diffused in the epitaxial wafer easily and goes.Zn is from mixing the high Window layer of Zn concentration, is diffused into active layer as the luminous zone by P type AlGaInP interlayer.As everyone knows, if Zn diffuses into active layer, Zn forms non-radiative recombination center, and the characteristics of luminescence of LED is degenerated.
As everyone knows, when exciting current was added on the LED continuously, the influence of non-radiative recombination center will become obviously, and this has just reduced the reliability of LED widely.
Therefore, the objective of the invention is to prevent to form high potential barrier between P type interlayer and Window layer, is LED thereby the low AlGaInP of a kind of forward voltage is provided.
Another object of the present invention is to prevent to form between P type interlayer and Window layer high potential barrier, thereby the LED that is for the low AlGaInP of forward voltage provides a kind of epitaxial wafer.
A further object of the present invention is to prevent that diffusion of impurities from entering active layer, thus the LED that provides a kind of good luminous performance and the high AlGaInP of reliability to be.
A further object of the present invention is to prevent that diffusion of impurities from entering active layer, thereby is that LED provides a kind of epitaxial wafer for making good luminous performance and the high AlGaInP of reliability.
According to first characteristics of the present invention, the LED of AlGaInP system comprises:
A kind of conductivity substrate,
One deck n type interlayer, it is to be formed by the compound semiconductor that AlGaInP is,
One deck active layer, it is to be formed by the AlGaInP based compound semiconductor that band-gap energy is lower than n type interlayer band-gap energy,
One deck P type interlayer, it is to be formed by the AlGaInP based compound semiconductor that band-gap energy is higher than the active layer band-gap energy,
One deck n type Window layer, it is formed by GaP,
Two electrodes, they are to be made on the predetermined portions of Window layer and described substrate,
One deck insert layer, it is inserted between P type interlayer and the P type Window layer, and its band-gap energy is lower than the band-gap energy of P type interlayer.
Except that said structure, according to the present invention, preferably the band-gap energy of this insert layer is higher than the band-gap energy that AlGaInP is the active layer of LED.
Except that said structure, according to the present invention, preferably the conduction type of insert layer is the P type among the LED.
Except that said structure, according to the present invention, preferably the carrier concentration of the P type insert layer of LED is 5 * 10
17Cm
-3-5 * 10
18Cm
-3
Except that said structure, according to the present invention, preferably the insert layer of LED is formed by the material with P type interlayer lattice match.
Except that said structure, according to the present invention, preferably the insert layer of LED is by AlGaInP, GaInP, and AlInP, GaAs, AlGaAs, GaAsP or InGaAsP form, and the composition of insert layer makes its band-gap energy be lower than the band-gap energy of P type interlayer.
Except that said structure,, in LED, can adopt by Ga according to the present invention
xIn
1-xP (0＜x≤1), Al
yIn
1-yP (0＜y≤1) or Al
zIn
1-zP (0＜z≤1), the Window layer of formation substitutes the P type Window layer that is formed by GaP.
According to second characteristic of the present invention, AlGaInP is that the epitaxial loayer of LED comprises:
A kind of conductivity substrate,
One deck n type interlayer, it is to be formed by the compound semiconductor that AlGaInP is,
One deck active layer, it is to be formed by the compound semiconductor that band-gap energy is lower than the AlGaInP system of n type interlayer band-gap energy,
One deck P type interlayer, it is to be formed by the compound semiconductor that band-gap energy is higher than the AlGaInP system of active layer band-gap energy,
One deck Window layer, it is formed by GaP, and
One deck insert layer, it is inserted between P type interlayer and the P type Window layer, and its band-gap energy is lower than the band-gap energy of P type interlayer.
Except that said structure, preferably the band-gap energy of insert layer is higher than the band-gap energy of active layer in the epitaxial wafer of the LED of AlGaInP system.
Except that said structure, according to the present invention, preferably AlGaInP is that the conduction type of the insert layer of LED epitaxial wafer is the P type.
Except that said structure, according to the present invention, preferably AlGaInP is that the carrier concentration of the insert layer of LED epitaxial wafer is 5 * 10
17Cm
-3-5 * 10
18Cm
-3
Except that said structure, according to the present invention, preferably AlGaInP is that the insert layer and the P type interlayer of LED epitaxial wafer are lattice match.
Except that said structure, according to the present invention, preferably AlGaInP is that the insert layer of LED epitaxial wafer comprises AlGaInP, GaInP, and AlInP, GaAs, AlGaAs, GaAsP or InGaAsP, its composition should make its band-gap energy be lower than the band-gap energy of P type interlayer.
Except that said structure,, be to adopt by G2 in the LED epitaxial wafer at AlGaInP according to the present invention
xIn
1-xP (0＜x≤1), Al
yIn
1-yP (0＜y≤1) or Al
zGa
1-zThe Window layer that P (0＜z≤1) forms replaces the P type window that formed by GaP.
According to the present invention, by between P type AlGaInP interlayer and P type GaP Window layer, the insert layer that insertion one deck band-gap energy is lower than the band-gap energy of P type AlGaInP interlayer prevents to form high potential barrier on the heterogeneous interface between P type AlGaInP interlayer and the P type GaP layer, so that reduce the forward voltage of LED.
According to the 3rd characteristics of the present invention, the LED of AlGaInP system comprises:
A kind of n type conductive substrates,
One deck n type interlayer, it is to be formed by the compound semiconductor that AlGaInP is,
One deck active layer, it is to be formed by the compound semiconductor that AlGaInP is, its band-gap energy is lower than n type interlayer band-gap energy,
One deck P type interlayer, it is to be formed by the compound semiconductor that AlGaInP is, its band-gap energy is higher than the band-gap energy of active layer,
One deck P type Window layer, and
One deck insert layer, it is that compound semiconductor by AlGaInP system forms, be inserted in the P type interlayer or be inserted in P type interlayer and P type Window layer between.
Wherein insert layer and P type interlayer are lattice match, and the ratio of component of Al is lower than the ratio of component of P type interlayer and is higher than the ratio of component of active layer in insert layer.
Except that said structure, according to the present invention, preferably the LED of AlGaInP system has the Window layer that is formed by GaP.
Except that said structure, according to the present invention, preferably the diode of AlGaInP system has with Zn doped P-type interlayer and P type Window layer.
Except that said structure, according to the present invention, preferably AlGaInP is that the carrier concentration of the insert layer of LED is 2 * 10
17Cm
-3-5 * 10
18Cm
-3
According to the 4th characteristics of the present invention, AlGaInP is that the LED epitaxial wafer comprises:
A kind of substrate of n type conductivity,
One deck n type interlayer, it is to be formed by the compound semiconductor that AlGaInP is,
One deck active layer, it is to be formed by the compound semiconductor that AlGaInP is, its band-gap energy is lower than the band-gap energy of n type interlayer,
One deck P type interlayer, it is to be formed by the compound semiconductor that AlGaInP is, its band-gap energy is higher than the band-gap energy of active layer,
One deck P type Window layer,
One deck insert layer, it is that compound semiconductor by AlGaInP system forms, be inserted in the P type interlayer or be inserted in P type interlayer and P type Window layer between.
Wherein insert layer and P type interlayer are lattice match, and the ratio of component of Al is lower than the ratio of component of P type interlayer in insert layer, and are higher than the ratio of component of active layer.
Except that said structure, according to the present invention, preferably, the epitaxial wafer that is used for AlGaInP and is LED has the Window layer that one deck is formed by GaP.
Except that said structure, according to the present invention, the epitaxial wafer that preferably is used for AlGaInP and is LED comprises that one deck mixes P type interlayer and one deck Window layer of Zn.
Except that said structure, according to the present invention, preferably, the carrier concentration of insert layer that is used for AlGaInP and is the epitaxial wafer of LED is 2 * 10
17Cm
-3-5 * 10
18Cm
-3
In the present invention, some epitaxial loayers below growing in succession on a kind of n type conductivity substrate, it is the n type interlayer that one deck is formed by the AlGaInP based compound semiconductor, the band-gap energy that one deck is formed by the AlGaInP based compound semiconductor is lower than the active layer of n type interlayer band-gap energy, the band-gap energy that one deck is formed by the AlGaInP based compound semiconductor is higher than P type interlayer and one deck P type Window layer of active layer band-gap energy, wherein also is inserted with an one deck insert layer that is formed by the AlGaInP based compound semiconductor in P type interlayer or between P type interlayer and P type Window layer.And this insert layer and P type interlayer are lattice match, and the ratio of component of Al is lower than the ratio of component in the P type interlayer and is higher than the ratio of component of active layer in insert layer.Based on said structure, advance the reduction that active layer just can prevent LED output by stoping diffusion of impurities.
At this, though in AlGaInP is the preparation process of LED, to the selected composition of each epitaxial loayer of P type interlayer the lattice constant of P type interlayer and the lattice constant of substrate are complementary from the epitaxial loayer of being close to substrate, but from band-gap energy, the viewpoint of resistivity and reliability is set out, and the GaP layer of also must grow on P type interlayer unique one deck and substrate lattice mismatch is as Window layer.
Therefore, Japan Patent 10-256598 proposes a scheme and is, alleviates in order to make lattice deformation, inserts the insert layer that one deck has middle lattice constant between P type interlayer and Window layer.Though the invention of such scheme has improved the crystalline quality of the GaP that grows under the lattice mismatch condition, this method all can not stop the diffusion of Zn effectively.
As inventor's earnest result of study, they have found such fact, and promptly above-mentioned Zn diffusion is to be caused by the crystal defect relevant with Al, and Zn is easy to spread in the high material of Al ratio of component.On the contrary, Zn is difficult to diffusion in the low material of Al ratio of component.Subsequently, the inventor thinks, do not diffuse into the active layer of last doping since do not wish the Zn in P type interlayer and the Window layer, so, inserting one deck Al ratio of component in P type interlayer or between P type interlayer and Window layer, to be lower than AlGaInP be that the AlGaInP of P type interlayer Al ratio of component is when being insert layer, this insert layer will work to stop the impedor (resistor) of Zn diffusion, thereby compares with conventional LED, and the pollution of the active layer that is caused by Zn will reduce greatly.And in order to make luminous energy from active layer emission by above-mentioned insert layer, the Al ratio of component of the insert layer of AlGaInP based compound semiconductor formation must be higher than the Al component ratio of active layer.Certainly, this insert layer and P type interlayer should be lattice match.
That is to say, according to the present invention, if the AlGaInP of standard is LED is that ratio of component by inserting an Al in P type interlayer or between P type Window layer and P type interlayer prepares than the method for the high insert layer of active coating than the low of this P type interlayer, and top electrode is used as P type electrode in this LED, then can obtain high luminous power and high reliability, above-mentioned insert layer is in order to prevent that diffusion of impurities from advancing active layer.
The present invention will be described in more detail below in conjunction with accompanying drawing
Brief description, wherein:
It is that the AlGaInP of 590nm is the structure of the conventional epitaxial wafer of LED that Fig. 1 represents to be used for emission wavelength;
Fig. 2 represents that shown in Figure 1 to be used for epitaxial wafer P type GaP Window layer and P type AlGaInP that AlGaInP is LED be near the band structure the heterogeneous interface between the interlayer.
Fig. 3 represents to be used for the structure that AlGaInP is the another kind of conventional epitaxial wafer of LED;
Fig. 4 represents to be used for that the described AlGaInP of first preferred embodiment is the structure of the epitaxial wafer of LED according to the present invention;
Fig. 5 explanation reason that the described LED forward voltage of first preferred embodiment descends according to the present invention;
Fig. 6 represents the electrology characteristic of the described LED of first preferred embodiment according to the present invention;
Fig. 7 represents to be used for that the described AlGaInP of second preferred embodiment is the structure of the epitaxial wafer of LED according to the present invention;
The distribution of Zn in the epitaxial wafer shown in Figure 7 that Fig. 8 represents to measure with the sims analysis method;
The described AlGaInP of improvement project that Fig. 9 represents to be used for second preferred embodiment according to the present invention is the structure of the epitaxial wafer of LED;
The distribution of Zn in the epitaxial wafer shown in Figure 9 that Figure 10 represents to measure with the sims analysis method;
Zn in the conventional epitaxial wafer that Figure 11 represents to measure with the sims analysis method distributes.
Preferred embodiment is described
To epitaxial wafer and the prepared LED of the LED of the described AlGaInP of being used for of first preferred embodiment system according to the present invention be described below.Here, the structural elements in the common process shown in Figure 1 will be used the reference numerals identical with Fig. 1.
According to the AlGaInP of first preferred embodiment is that the characteristics of LED epitaxial wafer are to be to form the insert layer 7a that one deck band-gap energy is lower than P type AlGaInP interlayer 5a band-gap energy between interlayer 5a and the P type GaP Window layer 6a at P type AlGaInP.
Fig. 5 explanation is used for the reason that the forward voltage of epitaxial wafer that AlGaInP is LED and prepared LED descends in first preferred embodiment of the present invention.
By at P type (Al
0.7Ga
0.3)
0.5In
0.5Form one deck insert layer 7a between P interlayer 5a and the P type GaP Window layer 6a, can prevent at P type (Al
0.7Ga
0.3)
0.5In
0.5The high potential barrier that forms on the interface between P interlayer 5a and the P type GaP Window layer 6a.The represented potential barrier of with dashed lines circle C is lower than the represented potential barrier of with dashed lines circle B among Fig. 2 among Fig. 5.With the described AlGaInP of being used for of first preferred embodiment is that the epitaxial wafer of LED prepares LED the forward voltage of LED is reduced according to the present invention.
Fig. 4 represents that first preferred embodiment is described according to the present invention, and being used for AlGaInP is the structure of the epitaxial wafer of LED.To be that the situation of epitaxial wafer of the red-light LED of 625nm illustrates first preferred embodiment of the present invention to being used for making emission wavelength below.
Fig. 4 represents, and to be used for AlGaInP be that the preparation process of epitaxial wafer of LED is as follows:
At first with the method for MOVPE one deck n type (mixing Se) GaAs resilient coating 2a that on n type GaAs substrate 1a, grows in succession, one deck n type (mixing Se) (Al
0.7Ga
0.3) In
0.5 P interlayer 3a, the unadulterated (Al of one deck
0.1Ga
0.9)
0.5In
0.5(the Al of P active layer 4a and one deck P type (mixing Zn)
0.7Ga
0.3)
0.5In
0.5 P interlayer 5a.
Then, the method for the MOVPE 100nm thick P type (Al of one deck that on P type interlayer 5a, grow as insert layer (of the present invention primary structure unit)
0.1Ga
0.9)
0.5In
0.5The P layer 7a (be called later on and reduce the forward voltage layer) and the thick GaP Window layer of one deck 10 μ m of on 7a, growing again.
All epitaxial loayers of 2a～7a are all grown under the following conditions, and growth temperature is 700 ℃, and growth pressure is 50Torr, and the growth rate of all epitaxial loayers all is 0.3～3.0nm/s, and the V/III ratio is 100～600.After the growth, epitaxial wafer is processed so that form LED.
Led chip is of a size of 300 μ m * 300 μ m, forms n type electrode on the whole bottom surface of led chip, at the upper surface of the led chip P type circle electrode that to form a diameter be 150 μ m.Sequential evaporation thickness is 60nm on n type electrode then, the Au/Ge of 10nm and 500nm, Ni and Au layer.Equally, sequential evaporation thickness is the Au/Zn of 60nm, 10nm and 1000nm on P type electrode, Ni and Au layer.Carry out on this chip, loading onto lead-in wire and carry out resin-sealed chip.At last the characteristics of luminescence and the volt-ampere characteristic of the LED of such acquisition are measured.
Fig. 6 represents the electrology characteristic according to LED of the present invention, and wherein abscissa is represented forward voltage, and ordinate is represented forward current.
In Fig. 6, solid line is represented the electrology characteristic of the LED of first preferred embodiment according to the present invention, and this LED comprises one deck (Al
0.1Ga
0.9)
0.5In
0.5P active layer and reduction forward voltage layer 7a, and dotted line is represented the electrology characteristic of conventional LED.
Although the forward voltage of conventional LED is 2.4V, the AlGaInP that uses first preferred embodiment according to the present invention is that the forward voltage of the LED of LED epitaxial wafer preparation is 1.8V, thereby the present invention is significantly improved forward voltage.
The forward voltage minimum of LED is by the decision of the band-gap energy of active layer 4a.1.8V the forward voltage AlGaInP that approaches first preferred embodiment according to the present invention be the resulting minimum of band-gap energy of LED epitaxial wafer active layer 4a.Adopt the forward voltage values under the situation of AlGaAs Window layer no better than.By providing reduction forward voltage layer 7a to prevent from effectively on the heterogeneous interface between P type GaP Window layer 6a and the P type interlayer 5a, to form potential barrier.And, reduce forward voltage layer 7a by providing, make that the luminosity of the LED of first preferred embodiment is low unlike the brightness of conventional LED according to the present invention.
Though for reduce by between P type interlayer 5a and the P type Window layer 6a by can between this is two-layer, inserting the insert layer that one deck band-gap energy is lower than P type interlayer band-gap energy with the potential barrier that discontinuity causes, if but insert the reduction forward voltage insert layer 7a that one deck band-gap energy is lower than active layer 4a band-gap energy, the light of active layer 4a emission can be reduced positive voltage layer 7a absorption by this so, thereby the luminous efficiency of LED is reduced.Therefore, the band-gap energy that preferably reduces positive voltage layer 7a is lower than the band-gap energy of P type interlayer 5a and is higher than the band-gap energy of active layer 4a.
And the conduction type that preferably reduces forward voltage layer 7a is identical with the conduction type of P type interlayer 5a and P type GaP Window layer, and its carrier concentration is higher than 5 * 10
17Cm
-3, and be lower than 5 * 10
18Cm
-3Be lower than 5 * 10 if reduce the carrier concentration of forward voltage layer 7a
18Cm
-3So, the resistivity that reduces forward voltage layer 7a will uprise, thereby forward voltage is increased.Be higher than 5 * 10 if reduce the carrier concentration of forward voltage layer 7a
18Cm
-3, crystal defect will increase so, thereby luminous efficiency is reduced.
Preferably reducing forward voltage layer 7a mates with lattice as the P type interlayer 5a of lower floor.If the former with the latter is a lattice mismatch, will in epitaxial loayer, produce defective so, so that produce some problems, promptly luminous efficiency reduces and makes P type GaP Window layer thicken unclear.
Though the LED to epitaxial wafer with n type substrate and the preparation of above-mentioned epitaxial wafer has provided explanation, the conduction type of substrate never is limited to the n type, and also can obtain same effect in the LED of epitaxial wafer with P type substrate and epitaxial wafer preparation thus.
In a word, can obtain following excellent effect according to the present invention.
It is the LED that the forward voltage of LED epitaxial wafer and epitaxial wafer preparation thus is reduced that AlGaInP can be provided.
Below in conjunction with accompanying drawing the present invention's second preferred embodiment is elaborated.
Fig. 7 represents second preferred embodiment according to LED epitaxial wafer of the present invention.Here every have with the structural elements of identical functions shown in Fig. 3 all use identical reference numerals.
Be used to make epitaxial wafer following epitaxial loayer preparation of growth in succession on n type GaAs resilient coating 1b of LED: one deck n type GaAS resilient coating 2b, one deck n type (Al
0.7Ga
0.3)
0.5In
0.5 P interlayer 3b, (the Al of one deck last doping
0.15Ga
0.85)
0.5In
0.5P active layer 4b, one deck P type (Al
0.7Ga
0.3)
0.5In
0.5 P interlayer 5b, one deck P type (Al
0.3Ga
0.7)
0.5In
0.5 P insert layer 7b and one deck P type GaP Window layer 6b.
Preferably insert layer 7b is by forming with the similar AlGaInP based material of P type interlayer 5b, and the ratio of component of Al should be lower than the ratio of component of P type interlayer 5b and is higher than the ratio of component of active layer 4b among the insert layer 7b.Adopting the reason of said structure is that it can avoid undesirable pollution, thereby crystal is grown easily.But insert layer 7b not necessarily must be formed by the AlGaInP based material.And, can be by inserting the AlGaAs layer or not containing Al and the GaAs layer suppresses the diffusion of Zn.
Moreover the reason that the ratio of component of Al is higher than active layer 4b among the insert layer 7b is: the light of active layer emission can pass through insert layer 7b like this.
Carrier concentration is 2 * 10 among the insert layer 7b
17Cm
-3-5 * 10
18Cm
-3Reason be: if carrier concentration is lower than 2 * 10
17Cm
-3, the resistivity of insert layer becomes very high so, thereby the driving voltage of LED also can become very high, if carrier concentration is higher than 5 * 10
18Cm
-3The crystalline quality of insert layer will variation so, thereby luminous power will reduce.Therefore, all can not provide practical LED in the above two kinds of cases.
Be higher than the band-gap energy of active layer 4b though wish the band-gap energy of insert layer 7b, thereby the light that makes the active layer emission is not inserted into a layer 7b absorption, if but insert layer is thinned to it can be ignored radiative absorption, even the band-gap energy of the insert layer 7b band-gap energy that is lower than active layer 4b also can obtain satisfied result so, thereby also not necessarily will have an insert layer 7b exclusion than the low band gaps energy, because ratio of component according to Al among the insert layer 7b, the kind of P type interlayer 5b, the doping of Zn and the heat stagnation situation between male extension among the Window layer 6b, there is an optimum value in the thickness of this insert layer 7b, and the variable thickness of insert layer 7b is restricted surely.
In order to prevent that Zn from diffusing into active layer 4b, can in P type interlayer 5b, insert multilayer insert layer 7b.
[embodiment 1b]
As second preferred embodiment of the present invention, having structure shown in Figure 7, to be used for making emission wavelength be that the epitaxial wafer of the AlGaInP system of 620nm ruddiness is produced out.
The structure of this epitaxial wafer and the growing method of epitaxial wafer are identical with following reference examples, and to insert a layer thickness between P type interlayer 5b and Window layer 6b be that 0.1 μ m, Zn doping content are 5 * 10
17Cm
-3(Al
0.3Ga
0.7)
0.5In
0.5The P insert layer.
Fig. 8 is illustrated in the Zn CONCENTRATION DISTRIBUTION of measuring with the method for sims analysis as in the epitaxial wafer of the present invention's second preferred embodiment preparation.The abscissa indicated concentration, the concentration of ordinate (logarithmic scale) expression Zn.
As by Fig. 8 saw, the distribution of Zn almost with the present invention estimated identical, do not observe the unusual Zn diffusion that in conventional LED, takes place.
Subsequently, epitaxial wafer is processed with preparation LED, and the characteristics of luminescence of LED is measured with method in common.Luminous power is 1.1mw, is that forward voltage is 1.9V under the situation of 20mA at impressed current.
[embodiment 2b]
Fig. 9 represents that according to the present invention second preferred embodiment amendment is used for making the structure of the epitaxial wafer of LEDAlGaInP system.
Fig. 9 represents to be used to make the epitaxial wafer that transmitted wave is about the red-light LED of 620nm.
Though the structure of embodiment 2b is identical with above-mentioned embodiment 1b basically with the growing method of epitaxial wafer, at P type interlayer 5b
1And 5b
2Between to have inserted a thickness be that 0.1 μ m, Zn doping content are 5 * 10
17Cm
-3P type (Al
0.2Ga
0.8)
0.5In
0.5The P layer is as insert layer 7b.
Figure 10 is illustrated in the sims analysis result of the Zn concentration of outer Yanzhong shown in Fig. 9, and wherein abscissa is represented the degree of depth, the concentration of ordinate (logarithmic scale) expression Zn.
As by what Figure 10 saw, the diffusion of Zn terminates in insert layer 7b, thereby can not observe the diffusion of Zn in active layer, and this was as inventors of the present invention estimated.
And then, the epitaxial wafer of such acquisition is processed so that form LED, and measured the characteristics of luminescence of LED.Luminous power is 1.3mw, and when applying the electric current of 20mA on LED, the forward voltage on LED is 1.9V.
[reference examples]
Prepared the LED epitaxial wafer of emission wavelength 620nm ruddiness according to Fig. 3.
With MOVPE growth method one deck n type (mixing Se) GaAs resilient coating 2b that on n type GaAs substrate 1b, grows in succession, one deck n type (mixing Se's) interlayer 3b, one deck active layer 4b and one deck P type interlayer 5b, and regrowth one layer thickness is the Window layer 6b of 10 μ m on P type interlayer 5b.
The MOVPE of epitaxial loayer 2b-5b growth, finish under the growth pressure of 700 ℃ growth temperature and 50Torr up to forming P type interlayer 5b: epitaxial loayer 2b, 3b and 4b are than growth with the V/III of the growth rate of 0.3～1.0nm/s and 300～600.Window layer 6b is with the growth rate growth of 100 V/III and 1nm/s.In P type interlayer 5b, the concentration of Zn is 5 * 10
17m
-3, and the concentration of Zn is 1 * 10 in the GaP of Window layer 6b
18Cm
-3
Figure 11 show with the sims analysis method measure Zn is along the CONCENTRATION DISTRIBUTION of depth direction in conventional epitaxial wafer, wherein abscissa is represented the degree of depth, the concentration of ordinate (logarithmic scale) expression Zn.
The analysis result of SIMS confirms that the Zn among the Window layer 6b has diffused into n type interlayer 3b in a large number, the luminous zone of active layer 4b and P type interlayer 5b.
Then, epitaxial wafer is processed so that prepare LED.Chip is of a size of 300 μ m * 300 μ m, forms a n type electrode in the whole bottom surface of chip, at the upper surface of the chip P type circle electrode that to form a diameter be 150 μ m.N type electrode is to be 60nm by sequential evaporation thickness, the Au/Ge of 100nm and 500nm, and the method for Ni and Au forms.P type electrode is to be 60nm with sequential evaporation thickness, the Au/Zn of 10nm and 100nm, and the method for Ni and Au forms.On chip, carry out after the lead-in wire, can measure the characteristics of luminescence.Luminous power is 0.6mw, and under the situation that applies the 20mA electric current on the LED, the forward voltage on the LED is 2.4V.
As mentioned above, just can obtain the LED of luminous power height and good reliability with a kind of simple structure.
Because the Zn of conventional sheet diffusion poor repeatability, so the CONCENTRATION DISTRIBUTION fluctuation of Zn is remarkable in each sheet and between many, this just makes product uniformity and repeated variation.But, according to the present invention, owing to can suppress the diffusion of Zn, so the problems referred to above can be resolved.
Because the concentration of Zn has the distribution as inventor's expection, thus a layer with high carrier concentration between P type interlayer and Window layer, can be formed, so can obtain to have good reproducibility and the low LED of forward voltage.
In a word, according to the present invention, can obtain following excellent results.
Can provide and make AlGaInP is the epitaxial wafer used of LED and the low LED of forward voltage of epitaxial wafer preparation thus.
Though for the present invention for the purpose of complete sum is clear is described with regard to specific embodiment, but attached claim should not be limited to this, and should think to comprise the interior all modifications of basic thought scope and other structures of belonging to the present invention's proposition equitably that those skilled in the art may be done.
Claims (22)
1. the LED of AlGaInP system, it comprises:
A kind of conductivity substrate,
One deck n type interlayer, it is formed by the AlGaInP based compound semiconductor,
One deck active layer, it is to be formed by the AlGaInP based compound semiconductor that band-gap energy is lower than described n type interlayer band-gap energy,
One deck P type interlayer, it is to be formed by the AlGaInP based compound semiconductor that band-gap energy is higher than described active layer band-gap energy,
One deck P type Window layer, it is formed by GaP,
Two electrodes, they are to form at the predetermined portions of described Window layer and described substrate, and
One deck insert layer, it is inserted between described P type interlayer and the described P type Window layer, and its band-gap energy is lower than the band-gap energy of described P type interlayer.
2. the LED that AlGaInP according to claim 1 is, it is characterized in that: the band-gap energy of described insert layer is higher than the band-gap energy of active layer.
3. the LED that AlGaInP according to claim 1 is, it is characterized in that: the conduction type of described insert layer is the P type.
4. according to the LED of the AlGaInP of claim 3 system, it is characterized in that: the carrier concentration of described P type insert layer is 5 * 10
17Cm
-3-5 * 10
18Cm
-3
5. the LED that AlGaInP according to claim 1 is, it is characterized in that: described insert layer and described P type interlayer are lattice match.
6. the LED that AlGaInP according to claim 1 is, it is characterized in that: described insert layer is by AlGaInP, GaInP, AlInP, GaAs, AlGaAs, GaAsP or InGaAsP form, and its composition should make its band-gap energy be lower than the band-gap energy of described P type interlayer.
7. the LED of AlGaInP system, it comprises:
A kind of conductivity substrate,
One deck n type interlayer, it is formed by the AlGaInP based compound semiconductor,
One deck active layer, it is to be formed by the AlGaInP based compound semiconductor that band-gap energy is lower than described n clevis layer band-gap energy,
One deck P type interlayer, it is to be formed by the AlGaInP based compound semiconductor that band-gap energy is higher than described active layer band-gap energy,
One deck Window layer, it is by Ga
xIn
1-xP (0＜X≤1), Al
yIn
1-yP (0＜y≤1) or Al
zGa
1-zP (0＜Z≤1) forms,
Two electrodes, they are to form at the predetermined portions of described Window layer and described substrate,
One deck insert layer, it is inserted between described P type interlayer and the described Window layer, and band-gap energy is lower than the band-gap energy of described P type interlayer.
8. epitaxial wafer that is used for the LED of AlGaInP system, it comprises:
A kind of conductivity substrate,
One deck n type interlayer, it is formed by the AlGaInP based compound semiconductor,
One deck active layer, it is to be formed by the AlGaInP based compound semiconductor that band-gap energy is lower than described n type interlayer band-gap energy,
One deck P type interlayer, it is to be formed by the AlGaInP based compound semiconductor that band-gap energy is higher than described active layer band-gap energy,
One deck P type Window layer, it is formed by GaP,
One deck insert layer, it is inserted between described P type interlayer and the described P type Window layer, and its band-gap energy is lower than the band-gap energy of described P type interlayer.
9. the epitaxial wafer that is used for the LED of AlGaInP system according to claim 8, it is characterized in that: the band-gap energy of described insert layer is higher than the band-gap energy of described active layer.
10. the epitaxial wafer that is used for the LED of AlGaInP system according to claim 8, it is characterized in that: the conduction type of described insert layer is the P type.
11. the epitaxial wafer that is used for the LED of AlGaInP system according to claim 10, it is characterized in that: the carrier concentration in the described insert layer is 5 * 10
17Cm
-3-5 * 10
18Cm
-3
12. the epitaxial wafer that is used for the LED of AlGaInP system according to claim 8, it is characterized in that: described insert layer and described P type interlayer are lattice match.
13. the epitaxial wafer that is used for the LED of AlGaInP system according to claim 8, it is characterized in that: described insert layer is by compound semiconductor AlGaInP, GaInP, AlInP, GaAs, GaAsP or InGaAs form, and its composition makes its band-gap energy be lower than the band-gap energy of described P type interlayer.
14. an epitaxial wafer that is used for the LED of AlGaInP system, it comprises:
A kind of conductivity substrate,
A kind of n type interlayer, it is formed by the AlGaInP based compound semiconductor,
One deck active layer, it is to be formed by the AlGaInP based compound semiconductor that band-gap energy is lower than described n type interlayer band-gap energy,
One deck P type interlayer, it is to be formed by the AlGaInP based compound semiconductor that band-gap energy is higher than described active layer band-gap energy,
One deck Window layer, it is by Ga
xIn
1-xP (0＜X≤1), Al
yIn
1-yP (0＜y≤1) or Al
zGa
1-zP (0＜Z≤1) forms,
One deck insert layer, it is inserted between described P type interlayer and the described Window layer, and its band-gap energy is lower than the band-gap energy of described P type interlayer.
15. the LED of an AlGaInP system, it comprises:
A kind of substrate with n type conductivity,
One deck n type interlayer, it is formed by the AlGaInP based compound semiconductor,
One deck active layer, it is to be formed by the AlGaInP based compound semiconductor that band-gap energy is lower than described n type interlayer band-gap energy,
One deck P type interlayer, it is to be formed by the AlGaInP based compound semiconductor that band-gap energy is higher than described active layer band-gap energy,
One deck P type Window layer,
One deck insert layer, it is formed by the AlGaInP based compound semiconductor, and it is inserted between described P type interlayer and the described P type Window layer;
Wherein said insert layer and described P type interlayer are lattice match, and the Al ratio of component in the described insert layer is lower than the Al ratio of component in the described P type interlayer and is higher than the Al combination ratio of described active layer.
16. the LED that AlGaInP according to claim 15 is, it is characterized in that: described P type Window layer is formed by GaP.
17. the LED that AlGaInP according to claim 15 is is characterized in that: described P type interlayer and described P type Window layer all are that Zn mixes.
18. the LED that AlGaInP according to claim 15 is, it is characterized in that: the carrier concentration of described insert layer is 2 * 10
17Cm
-3-5 * 10
18Cm
-3
19. an epitaxial wafer that is used for the LED of AlGaInP system, it comprises:
A kind of n type conductive substrates,
One deck n type interlayer, it is formed by the AlGaInP based compound semiconductor,
One deck active layer, it is to be formed by the AlGaInP based compound semiconductor that band-gap energy is lower than described n type interlayer band-gap energy,
One deck P type interlayer, it is to be formed by the AlGaInP based compound semiconductor that band-gap energy is higher than described active layer band-gap energy,
One deck P type Window layer,
One deck insert layer, it is formed by the AlGaInP based compound semiconductor, and it is inserted between described P type interlayer and the described P type Window layer;
Wherein said insert layer and described P type interlayer are lattice match, and the Al ratio of component of described insert layer is lower than the Al ratio of component of P type interlayer and is higher than the Al ratio of component of described active layer.
20. the epitaxial wafer that is used for the LED of AlGaInP system according to claim 19, it is characterized in that: described P type Window layer is formed by GaP.
21. the epitaxial wafer that is used for the LED of AlGaInP system according to claim 19, it is characterized in that: described P type interlayer and described P type Window layer are all mixed Zn.
22. the epitaxial wafer that is used for the LED of AlGaInP system according to claim 19, it is characterized in that: the carrier concentration in the described insert layer is 2 * 10
17Cm
-3-5 * 10
18Cm
-3
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP120121/99 | 1999-04-27 | ||
| JP12012199A JP3986703B2 (en) | 1999-04-27 | 1999-04-27 | Epitaxial wafer and light emitting device for AlGaInP light emitting device |
| JP120121/1999 | 1999-04-27 | ||
| JP18053999A JP2001007445A (en) | 1999-06-25 | 1999-06-25 | AlGaInP BASED LIGHT EMITTING ELEMENT AND EPITAXIAL WAFER FOR LIGHT EMITTING ELEMENT |
| JP180539/1999 | 1999-06-25 | ||
| JP180539/99 | 1999-06-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1271965A true CN1271965A (en) | 2000-11-01 |
| CN1251334C CN1251334C (en) | 2006-04-12 |
Family
ID=26457750
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN00108101.2A Expired - Fee Related CN1251334C (en) | 1999-04-27 | 2000-04-27 | AlGalnP series luminous diode and epitaxial wafer used for making said diode |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US20020145146A1 (en) |
| CN (1) | CN1251334C (en) |
| DE (1) | DE10020612A1 (en) |
| TW (1) | TW445659B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1320665C (en) * | 2002-04-17 | 2007-06-06 | 夏普公司 | Luminous element for semiconductor |
| CN1330008C (en) * | 2001-07-23 | 2007-08-01 | 克里公司 | Light emitting diodes including modifications for submount bonding and manufacturing methods therefor |
| CN100421273C (en) * | 2005-09-26 | 2008-09-24 | 日立电线株式会社 | Epitaxial wafer for led and light emitting diode |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7528417B2 (en) * | 2003-02-10 | 2009-05-05 | Showa Denko K.K. | Light-emitting diode device and production method thereof |
| TWI299914B (en) * | 2004-07-12 | 2008-08-11 | Epistar Corp | Light emitting diode with transparent electrically conductive layer and omni directional reflector |
| JP2006108350A (en) * | 2004-10-05 | 2006-04-20 | Stanley Electric Co Ltd | Semiconductor light emitting device |
| US8507929B2 (en) * | 2008-06-16 | 2013-08-13 | Koninklijke Philips Electronics N.V. | Semiconductor light emitting device including graded region |
| CN104362225B (en) * | 2014-09-25 | 2017-10-24 | 中国电子科技集团公司第四十四研究所 | A kind of 800nm wave band SLD epitaxial structures of the low degree of polarization of high power |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69023956T2 (en) * | 1989-06-16 | 1996-04-25 | Toshiba Kawasaki Kk | Method for producing a III-V compound semiconductor component. |
| JP3442864B2 (en) * | 1994-07-08 | 2003-09-02 | 三菱電線工業株式会社 | Semiconductor light emitting device |
| JP3122324B2 (en) * | 1995-02-20 | 2001-01-09 | 三菱電線工業株式会社 | Semiconductor light emitting device |
| JP3233569B2 (en) * | 1996-03-22 | 2001-11-26 | シャープ株式会社 | Semiconductor light emitting device |
| JP3807638B2 (en) * | 1997-01-29 | 2006-08-09 | シャープ株式会社 | Semiconductor light emitting device and manufacturing method thereof |
| US6107648A (en) * | 1997-03-13 | 2000-08-22 | Rohm Co., Ltd. | Semiconductor light emitting device having a structure which relieves lattice mismatch |
| JP3698402B2 (en) * | 1998-11-30 | 2005-09-21 | シャープ株式会社 | Light emitting diode |
-
2000
- 2000-04-26 TW TW089107934A patent/TW445659B/en not_active IP Right Cessation
- 2000-04-26 US US09/558,588 patent/US20020145146A1/en not_active Abandoned
- 2000-04-27 CN CN00108101.2A patent/CN1251334C/en not_active Expired - Fee Related
- 2000-04-27 DE DE10020612A patent/DE10020612A1/en not_active Withdrawn
-
2004
- 2004-06-09 US US10/863,388 patent/US20040224434A1/en not_active Abandoned
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1330008C (en) * | 2001-07-23 | 2007-08-01 | 克里公司 | Light emitting diodes including modifications for submount bonding and manufacturing methods therefor |
| CN1320665C (en) * | 2002-04-17 | 2007-06-06 | 夏普公司 | Luminous element for semiconductor |
| CN100421273C (en) * | 2005-09-26 | 2008-09-24 | 日立电线株式会社 | Epitaxial wafer for led and light emitting diode |
Also Published As
| Publication number | Publication date |
|---|---|
| DE10020612A1 (en) | 2000-11-02 |
| US20040224434A1 (en) | 2004-11-11 |
| CN1251334C (en) | 2006-04-12 |
| US20020145146A1 (en) | 2002-10-10 |
| TW445659B (en) | 2001-07-11 |
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