CN1271436C - Reflection type array wave guide modulating type photoswitch - Google Patents
Reflection type array wave guide modulating type photoswitch Download PDFInfo
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- CN1271436C CN1271436C CNB2004100157428A CN200410015742A CN1271436C CN 1271436 C CN1271436 C CN 1271436C CN B2004100157428 A CNB2004100157428 A CN B2004100157428A CN 200410015742 A CN200410015742 A CN 200410015742A CN 1271436 C CN1271436 C CN 1271436C
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Abstract
The present invention relates to a reflection type array waveguide modulating type optical switch which is composed of an input/output waveguide array, a plate waveguide area, a modulating waveguide array, a modulator array, a reflector array, an adjustable optical attenuator array, etc., wherein the input/output waveguide array, the plate waveguide area and the modulating waveguide array are orderly connected in a coupling mode directly by tapered waveguides, and the adjustable optical attenuator array is arranged on the input/output waveguide array. The modulator array is arranged on the modulating waveguide array, and the reflector array is arranged at the end of the modulating waveguide array. An input optical signal is coupled in the modulating waveguide array by the plate waveguide area, and is reflected by the reflector array. Two-time phase modulation is realized in the modulating waveguide array, and therefore, optical signals in different modulating waveguides can generate phase modulation. The optical signals with different phases can realize multiple-beam interference in the plate waveguide area to control an optical beam to be output to a specified output waveguide, and accordingly, the 1*N optical switch function is realized. Additionally, an N*1 optical switch array or an N*N optical switch array can be formed.
Description
Technical field
The present invention relates to reflection type array wave-guide modulation type 1 * N photoswitch of application in the processing of a kind of optical communication and light signal, be mainly used in the light signal of realizing in optical transmission line or the integrated optical circuit and change mutually or logical operation.
Background technology:
Photoswitch and array of photoswitch are optical devices crucial in the optical fiber telecommunications system, development along with Fibre Optical Communication Technology, the particularly application of data communication and dense wave division multipurpose (DWDM) system, all-optical network (AON) has become the trend of network development, and complicated network topology is to reliably, webmaster has produced strong requirement flexibly.DWDM is more urgent to the needs of photoswitch with function of exchange in the application of backbone network, Metropolitan Area Network (MAN) and Access Network.Network functions such as the optimization of light territory, route, protection and self-healing have become the gordian technique of all optical network, and everything all be unable to do without photoswitch.
Employing micro photo-electro-mechanical (MOEMS) technology, liquid crystal technology, holographic grating technology, bubble technology have been reported now, the photoswitch of various technology such as waveguide modulation technique.Wherein the waveguide optical switch switching speed is fast, generally arrives the submicrosecond magnitude in microsecond, and is easy to integrated large-scale switch arrays.Especially in fields such as the integrated and photometry calculations of light, waveguide optical switch has become the gordian technique that makes a breakthrough.CN 1279406A) and multiple-mode interfence (MMI) structure (tight fresh breeze etc. the waveguide optical switch of now having reported utilizes y-type structure (patent publication No.: usually, the design of 4 * 4 area modulation multiple-mode interfences coupling SOI optical waveguide switch, semiconductor optoelectronic, 2002, Vol.23 No.3:p174-p177), the problem of this class photoswitch is: the individual devices input/output terminal is few, to constitute array of photoswitch by multistage polyphone when realizing the multiport cross-connect, required device is many, the array structure complexity, loss is inserted in corresponding increase, and the aggravation of crosstalking has reduced switch performance; The switch isolation degree is generally not high; Certain structures such as y-type structure device architecture are not compact, and size is difficult to do little.
Summary of the invention:
The invention provides a kind of reflection type array wave-guide modulation type 1 * N optical switch construction, be used to realize multiport, low-loss, the waveguide optical switch of high-isolation.
The invention provides a kind of reflection type array wave-guide modulation type photoswitch, it is by I/O (I/O) waveguide array, and waveguide zone is modulated waveguide array, the adjustable optical attenuator array, and six structural units of modulator array and reflection mirror array constitute.I/O (I/O) waveguide array, waveguide zone, the modulation waveguide array directly is of coupled connections with tapered transmission line successively, the adjustable optical attenuator array is produced on I/O (I/O) waveguide array, modulator array is produced on the modulation waveguide array, and reflection mirror array is produced on the end of modulation waveguide array.I/O (I/O) waveguide array comprises an input waveguide and N bar output waveguide, wherein input waveguide is positioned at the center of I/O (I/O) waveguide array, the waveguide waveguide spacing that staggers half with output center, the coupling end face of I/O (I/O) waveguide array and waveguide zone is made tapered transmission line, and the bell width of tapered transmission line is less than or equal to the waveguide spacing.Waveguide zone is made the Rowland circle structure, the modulation waveguide is a straight wave guide in the modulation waveguide array, the modulation waveguide do long enough so that essential modulation length to be provided, the waveguide spacing increases gradually to provide makes the modulator array requisite space, modulating wave derivative order is more than or equal to output wave derivative N, modulating wave derivative order will be got an appropriate value, and the waveguide number can cause waveguide length excessive too much, increases the loss of device size and modulation waveguide; The waveguide number can increase the coupling loss of waveguide zone and modulation waveguide array very little, and the coupling end face of modulation waveguide array and waveguide zone also will be made tapered transmission line, and the bell width of tapered transmission line is less than or equal to the waveguide spacing.Make the adjustable optical attenuator array in I/O (I/O) waveguide, the production program of adjustable optical attenuator can be: utilize the plasma dispersion effect of Si, inject the absorption that realizes luminous power by PN junction charge carrier electricity, reach the purpose of adjustable damping; Utilize the plasma dispersion effect of Si, go into, produce a large amount of photo-generated carriers, light signal is realized power absorption, reach the purpose of adjustable light power decay by PN junction charge carrier light beam.Make modulator array on the modulation waveguide array, the implementation method of modulator array is a lot, can be: electrooptical modulation, used waveguide material are LiNiO
3Material or III-V family material; Hot optical modulation, used waveguide material are SiO
2Material, polymeric material or SOI material; Charge carrier injects modulation, and used waveguide material is Si or SOI material, goes into to realize optical modulation and other possible modulation system by the electricity injection or the light beam of PN junction.End at the modulation waveguide array is made reflection mirror array, reflection mirror array is positioned on the concentric circles of modulation waveguide array and waveguide zone boundary end face circle, cause optical path difference to avoid owing to modulate the waveguide length difference, the back side of reflecting surface array will plate reflection enhancing coating, and reflection mirror array constitutes an arc reflector.The optical signals input waveguide is input to waveguide zone, the tapered transmission line coupling end face of input waveguide and waveguide zone, can reduce the coupling loss of I/O (I/O) waveguide array and waveguide zone, increase and accept the light signal port size, reduce the mode switch loss.Waveguide zone evenly is coupled into the modulation waveguide array with light signal, the tapered transmission line coupling end face of modulation waveguide array and waveguide zone, can reduce the coupling loss of modulation waveguide array and waveguide zone, increase and accept the light signal port size, reduce the mode switch loss.Modulator array is realized phase modulation (PM) to the light signal in the modulation waveguide array, forms phase differential.Light signal is realized reflection at reflection mirror array, and the reflection enhancing coating at the reflection mirror array back side can increase reflection efficiency, reduces reflection loss.Light signal is realized secondary modulation by modulator array again in the modulation waveguide array after the reflection mirror array reflection, it is big that phase differential further becomes.When optical signals modulation waveguide array is coupled into waveguide zone, the light signal of out of phase is at waveguide zone generation multiple-beam interference, according to the multiple-beam interference principle, the output waveguide that can control bundle outputs to appointment by the control phase difference, reach the purpose that light signal switches, the tapered transmission line of waveguide zone and the output waveguide array end face that is coupled can reduce the coupling loss of waveguide zone and output waveguide array, increase and accept the light signal port size, reduce the mode switch loss.Adjustable optical attenuator array be used for the decaying luminous power of non-designated waveguide is a crosstalk optical signal, thereby further increases the isolation of photoswitch, and its effect is equivalent to one 1 * 1 array of photoswitch.Device is made on the same substrate, and backing material is relevant with the modulator material therefor with waveguide.
According to photoswitch provided by the invention, adopt the mode of Waveguide array modulation, realize 1 * N photoswitch of multiport, N can accomplish dozens or even hundreds of.The present invention is different from the AWG device, and it adopts the reflection type array wave-guide modulation, and the modulation waveguide is a straight waveguide, avoided the complex geometry design of AWG device array waveguide bend part, and because no sweep does not have bending loss, optical path length is easy to control, has improved device performance; The integrated adjustable optical attenuator array of output terminal has solved the not high problem of waveguide optical switch isolation.It is many to make port number, the waveguide optical switch that performance is good.
In addition, if with I/O (I/O) waveguide of this 1 * N photoswitch respectively as the output and the input waveguide of new switch, then constitute N * 1 photoswitch.Photoswitch of the present invention can also be realized N * N light switch function by full method of attachment.For example, N described 1 * N photoswitch and N described N * 1 photoswitch can be formed a N * N array of photoswitch, be used for the cross connection (OXC) of optical-fiber network.Ways of connecting can be that optical waveguide connects or optical fiber connects between each photoswitch.
Description of drawings
Below in conjunction with accompanying drawing principle and advantage of the present invention is described in detail.
Fig. 1 is common 1 * N waveguide optical switch structural representation, and 11 is optical splitter, generally uses y-type structure and MMI structure; 12 is modulator; 13 is coupling mechanism, generally with three-dB coupler or MMI structure.The general port number of this class waveguide optical switch less (N≤4), and have the not high problem of isolation.
Fig. 2 is the synoptic diagram by 1 * 32 array of photoswitch of 1 * 2 photoswitch formation, by synoptic diagram as can be seen, one 1 * 32 array of photoswitch, to obtain via 5 grades of serial connections by 31 1 * 2 photoswitches, it inserts loss and equals 5 grades of insertion loss sums, increase so insert loss, the aggravation of crosstalking greatly reduces device performance.
Fig. 3 is common array waveguide grating (AWG) structural representation.31 is input waveguide, and 32 is planar waveguide, and 33 is Waveguide array, and 34 is output waveguide.The AWG device has compact conformation, is easy to integratedly, is easy to advantages such as encapsulation, and shortcoming is the geometry designs complexity of Waveguide array sweep, and technology realizes that difficulty is big.
Fig. 4 is the structural representation according to reflection type array wave-guide modulation type photoswitch of the present invention.41 are I/O (I/O) waveguide array, and 42 is the adjustable optical attenuator array, and 43 is waveguide zone, and 44 are the modulation waveguide array, and 45 is modulator array, and 46 is reflection mirror array.
Fig. 5 is the tapered transmission line synoptic diagram of (I/O) waveguide array of I/O in the photoswitch shown in Figure 4 and waveguide zone coupling end face.41 are I/O (I/O) waveguide array, and 43 is waveguide zone, 51 tapered transmission lines for I/O (I/O) waveguide array and waveguide zone coupling end face.
Fig. 6 is photoswitch middle plateform wave guide zone shown in Figure 4 and the tapered transmission line synoptic diagram of modulating waveguide array coupling end face.43 is waveguide zone, and 44 are the modulation waveguide array, and 61 is waveguide zone and the tapered transmission line of modulating waveguide array coupling end face.
Embodiment
Embodiment 1: as shown in Figure 4 among the embodiment, reflection type array wave-guide modulation type 1 * N photoswitch is done substrate with the SOI material, I/O (I/O) waveguide array 41 comprises 1 input waveguide and N bar output waveguide, wherein input waveguide is positioned at the center of I/O (I/O) waveguide array and the output center waveguide waveguide spacing that staggers half.The coupling end face of I/O (I/O) waveguide array and waveguide zone is made tapered transmission line, and the bell width of tapered transmission line equals the waveguide spacing.Waveguide zone 43 is made the Rowland circle structure, is connected with the modulation waveguide array with the I/O waveguide array.The modulation waveguide is a straight wave guide in the modulation waveguide array 44, the modulation waveguide do long enough so that essential modulation length to be provided, the waveguide spacing increases gradually to provide makes the modulator array requisite space, modulating wave derivative order is more than or equal to output wave derivative N, modulating wave derivative order will be got an appropriate value, the waveguide number can cause waveguide length excessive too much, increases the loss of device size and modulation waveguide; The waveguide number can increase the coupling loss of waveguide zone and modulation waveguide array very little, and the coupling end face of modulation waveguide array and waveguide zone also will be made tapered transmission line, and the bell width of tapered transmission line approximates the waveguide spacing.Modulator array 45 is made in the modulation waveguide.Modulator array is realized with hot light modulating method; Reflection mirror array 46 is positioned on the concentric circles of modulation waveguide array and waveguide zone boundary end face circle, and the back side of reflection mirror array will plate reflection enhancing coating, and reflection mirror array constitutes an arc reflector.Adjustable optical attenuator array 42 is made on the I/O waveguide array, and adjustable optical attenuator utilizes the plasma dispersion effect of Si, makes PN junction in the modulation waveguide, injects by the charge carrier electricity and realizes the luminous power adjustable damping.
In the reflection type array wave-guide modulation type photoswitch that provides in the present embodiment, the tapered transmission line 51 bell width of I/O (I/O) waveguide array and waveguide zone coupling end face approximate waveguide spacing (as shown in Figure 5).
In the reflection type array wave-guide modulation type photoswitch that provides in the present embodiment, waveguide zone approximates waveguide spacing (as shown in Figure 6) with the tapered transmission line 61 bell width of modulation waveguide array coupling end face.
Embodiment 2: I/O (I/O) waveguide of 1 * N photoswitch provided by the invention respectively as the output and the input waveguide of new switch, is constituted N * 1 photoswitch.
Embodiment 3: N 1 * N photoswitch provided by the invention is connected entirely with N N provided by the invention * 1 photoswitch, constitute N * N array of photoswitch, concrete method of attachment is: the input waveguide of N 1 * N photoswitch is as the input waveguide array of N * N array of photoswitch, the N bar output waveguide of first 1 * N photoswitch is connected with article one input waveguide of N N * 1 photoswitch respectively, the N bar output waveguide of second 1 * N photoswitch is connected with the second input waveguide of N N * 1 photoswitch respectively, the N bar output waveguide of the 3rd 1 * N photoswitch is connected with the 3rd input waveguide of N N * 1 photoswitch respectively, the rest may be inferred, the N bar output waveguide of N 1 * N photoswitch is connected with the N bar input waveguide of N N * 1 photoswitch respectively, and the output waveguide of N N * 1 photoswitch is as the output waveguide array of N * N array of photoswitch.
Claims (10)
1. reflection type array wave-guide modulation type photoswitch is characterized in that:
(1) it is by the I/O waveguide array, and waveguide zone is modulated waveguide array, the adjustable optical attenuator array, and six structural units of modulator array and reflection mirror array constitute;
(2) I/O waveguide array, waveguide zone, the modulation waveguide array directly is of coupled connections with tapered transmission line successively, the adjustable optical attenuator array is produced on the I/O waveguide array, modulator array is produced on the modulation waveguide array, and reflection mirror array is produced on the end of modulation waveguide array;
(3) the coupling end face of I/O waveguide array and waveguide zone is made tapered transmission line, and the bell width of tapered transmission line equals the waveguide spacing;
(4) the coupling end face of modulation waveguide array and waveguide zone is also made tapered transmission line, and the bell width of tapered transmission line equals the waveguide spacing;
(5) the modulation waveguide is a straight wave guide in the modulation waveguide array, and modulating wave derivative order is more than or equal to output wave derivative N;
(6) be positioned on the concentric circles of modulation waveguide array and waveguide zone boundary end face circle at the terminal reflection mirror array of making of modulation waveguide array.
2. by the described reflection type array wave-guide modulation type of claim 1 photoswitch, it is characterized in that described I/O waveguide array comprises 1 input waveguide and N bar output waveguide, wherein input waveguide is positioned at the center of I/O waveguide array, with the output center waveguide waveguide spacing that staggers half.
3. by the described reflection type array wave-guide modulation type of claim 1 photoswitch, it is characterized in that described waveguide zone makes the Rowland circle structure, and be connected with the I/O waveguide array.
4. by the described reflection type array wave-guide modulation type of claim 1 photoswitch, it is characterized in that described adjustable optical attenuator array is produced on the I/O waveguide array, utilize the plasma dispersion effect of silicon, go into, reach adjustable damping by injection of PN junction charge carrier electricity or light beam.
5. by the described reflection type array wave-guide modulation type of claim 1 photoswitch, it is characterized in that the modulator array made on the described modulation waveguide array or inject modulate a kind of for electrooptical modulation or for hot optical modulation or for charge carrier.
6. by the described reflection type array wave-guide modulation type of claim 5 photoswitch, it is characterized in that described:
(1) the used waveguide material of electrooptical modulation is LiNiO
3Or III-V family material;
(2) the used waveguide material of hot optical modulation is SiO
2Material, polymeric material or SOI material;
(3) the used waveguide material of charge carrier injection modulation is Si or SOI material.
7. by the described reflection type array wave-guide modulation type of claim 1 photoswitch, it is characterized in that reflection mirror array constitutes an arc reflector.
8. by the described reflection type array wave-guide modulation type of claim 1 photoswitch, it is characterized in that reflection enhancing coating is coated at the back side of reflection mirror array.
9. by the described reflection type array wave-guide modulation type of claim 1 photoswitch, it is characterized in that I/O waveguide with 1 * N photoswitch respectively as the output and the input waveguide of this switch, constitutes N * 1 photoswitch.
10. by the described reflection type array wave-guide modulation type of claim 1 photoswitch, it is characterized in that described photoswitch is by full method of attachment, realize N * N photoswitch, N 1 * N photoswitch and N N * 1 photoswitch can be formed N * N array of photoswitch, are used for the cross connection of optical-fiber network.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2004100157428A CN1271436C (en) | 2004-01-09 | 2004-01-09 | Reflection type array wave guide modulating type photoswitch |
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| CNB2004100157428A CN1271436C (en) | 2004-01-09 | 2004-01-09 | Reflection type array wave guide modulating type photoswitch |
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| CN1271436C true CN1271436C (en) | 2006-08-23 |
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| JP5441766B2 (en) | 2010-03-08 | 2014-03-12 | 三菱電機株式会社 | Optical switch and optical switch control method |
| JP5952911B2 (en) * | 2012-09-27 | 2016-07-13 | 日本電信電話株式会社 | Optical signal processing device |
| CN103885121B (en) * | 2014-03-31 | 2016-05-11 | 中国科学院半导体研究所 | The preparation method of the adjustable Wavelength division multiplexer/demultiplexer of heterogeneous integrated light guide |
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