CN1270208C - Liquid crystal display plate with reflective electrode and producing method thereof - Google Patents
Liquid crystal display plate with reflective electrode and producing method thereof Download PDFInfo
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- CN1270208C CN1270208C CN 02145805 CN02145805A CN1270208C CN 1270208 C CN1270208 C CN 1270208C CN 02145805 CN02145805 CN 02145805 CN 02145805 A CN02145805 A CN 02145805A CN 1270208 C CN1270208 C CN 1270208C
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- lcd panel
- layer
- electrode
- reflecting electrode
- conductive strips
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Abstract
A liquid crystal display panel is provided to have an alignment layer having the wavelength dependency of transparency without yellow image-forming plane. An aluminum-neodymium alloy, which has neodymium content between 5 weight % to 10 weight %, is deposited on an inter-layered insulating layer(32) at the substrate temperature equal to or less than 170 degrees in centigrade for the reflection electrodes so that the surface morphology is represented by average pitches equal to or less than 1 micron. Even though the alignment layer has the wavelength dependency of transparency, the reflection electrodes equalize the optical path in the alignment layer so that the image-forming plane is not yellowed.
Description
Technical field
The present invention relates to a kind of LCD panel, and relate in particular to a kind of LCD panel and manufacture method thereof, below this LCD panel is called " LCD panel of reflection liquid crystal or reflective-transmissive formula " with reflecting electrode.
Background technology
Fig. 1 is illustrated in a representative instance of the reflection type liquid crystal display of explaining among the Japanese laid-open patent application No.2000-258787.Existing reflection type liquid crystal display splits into pair of substrates structure S1/S2, liquid crystal LC1, sealant (not shown) and sept (not shown).Underlying structure S1 and S2 are separated from each other by sept, and form an inner space with sealant.Inner space filling liquid crystal LC1.In the middle of this example, sealing twisted nematic liquid crystal in the inner space between underlying structure S1 and the S2.Ellipse among the figure is represented liquid crystal molecule and is represented with label 121.
Underlying structure S1 is produced on the dielectric base 110.Dielectric base 110 is formed by quartzy or non-alkali glass.On dielectric base 110, make the switching transistor array.Switching transistor is a thin film transistor (TFT), has only represented a thin film transistor (TFT) in Fig. 1.Other thin film transistor (TFT) and this thin film transistor (TFT) are side by side made.Thin film transistor (TFT) is produced as follows.At first, on dielectric base 110, form the gate electrode of making by refractory metal such as chromium (Cr) or molybdenum (Mo) 111.Gate electrode 111 is covered by gate insulation layer 112, on gate insulation layer 112 active layer 113 is produced pattern.Active layer 113 is formed by polysilicon.On active layer 113, form insulating spacer 114.Part active layer 113 on the gate electrode 111 serves as the channel region 113c of thin film transistor (TFT).Utilize insulating spacer 114 to implant mask, dopant ion is implanted active layer 113 and formed drain region 113d and source area 113s in the both sides of channel region 113c as ion.
Successive sedimentation silicon dioxide (SiO on the whole surface of resulting structures
2), silicon nitride (SiN
x) and silicon dioxide (SiO
2), they are combined to form a kind of inner insulation layer 115.Form a contact hole in inner insulation layer 115, contact hole arrives drain region 113d.Metal level such as aluminium lamination are made into the pattern of drain electrode 116.Drain electrode 116 passes the contact hole that is formed in the inner insulation layer 115, and keeps in touch with drain region 113d.
For example, the organic compound pitch deposition on the whole surface of resulting structures and form the layer 117 of a complanation.In complanation layer 117 and inner insulation layer 115, form a contact hole.Source area 113s is exposed to contact hole.On complanation layer 117, form the pattern of reflecting electrode 119.Reflecting electrode 119 passes contact hole and keeps contacting with source area 113s.Thereby reflecting electrode 119 also serves as the source electrode.The exposed surface of reflecting electrode 119 and complanation layer 117 is oriented layer 120 and covers, and oriented layer 120 is formed by organic compound resin such as polyimide.
Another underlying structure S2 is opposite with above-mentioned underlying structure S1 and also be produced on the dielectric base 130.Dielectric base 130 has two first type surfaces.A first type surface is relative with underlying structure S, below is called " inside surface ".Another first type surface is opposite with inside surface, below is called " outside surface ".
On the inside surface of dielectric base 130, make colored filter 131 and black matrix" 132 patterns.Colored filter 131 is selected three primary colours, promptly red, green G and blue B, and these optical filters align with reflecting electrode 119 respectively.Black matrix" 132 is opaque, and aligns with thin film transistor (TFT).The protective seam 133 that colored filter 131 and black matrix" 132 are synthesized resin covers, and protective seam is covered by counter electrode 134.Counter electrode 134 is stacked with oriented layer 135.On the other hand, form a phase difference film 143 on the outside surface of dielectric base 130, phase difference film is polarized sheet 144 and covers.
In above-mentioned existing reflective liquid crystal display board, reflecting electrode 119 by aluminum-neodymium alloys, be that the Al-Nd alloy forms.This Japanese laid-open patent application points out that the weight of the neodymium that alloy comprises is equal to or greater than 1%.This patent also insist the weight content of neodymium be equal to or greater than 1% pair of resistance separate out unusually (hillock) very effective.This patent is also insisted aluminium lamination the same big of the reflectivity of the aluminum-neodymium alloys of growing and growth at room temperature under 200 ℃ base reservoir temperature.
In Japanese laid-open patent application JP5-80327, disclosed the another kind of technology that relates to reflector plate.This patented claim provides a kind of method that forms the scattered reflection sheet.This method originates in the preparation of organic compound layer.Under 100 ℃～250 ℃ temperature on organic compound layer growth aluminium or platinum reflection horizon.On organic compound layer, grow reflecting material, be aluminium or platinum in because the difference of the thermal expansivity of organic compound and reflecting material, in organic compound layer, take place wrinklingly, and reflecting material forms particle on organic compound layer.Thereby reflector plate is uneven.This causes the raising of the irregular reflection characteristic of reflector plate.
The another kind of prior art that relates to reflector plate is disclosed among the Japanese laid-open patent application NO.2000-111906.This patented claim has provided the method that another kind of making has the electro-optical device in coarse reflection horizon.Electro-optical device comprises " LCD panel ", and this existing method comprises the following steps.At first be etched in and form projection in the lower floor by utilize grinding (honing) or n, again under 100 ℃～300 ℃ temperature with the 80-250 dust/minute speed growing metal on projection.Projection is transferred to metal level from lower floor.Metal level serves as a reflection horizon.As for metal, claim " material that is used for the reflection horizon is aluminium or any metal " in the patented claim undetermined of this Japan.But this Japanese patent application does not have the object lesson of record " metal arbitrarily ".After the growing metal, reflector plate is heat-treated, thereby the average headway with the 1-2 micron forms small projection on the surface of reflector plate.The height of minute protrusions is in 0.2 micron dimension.Improved the irregular reflection characteristic of reflector plate by minute protrusions.But other purpose is not put down in writing in the patented claim undetermined of this Japan.
Japanese laid-open patent application NO.2000-111906 also provides an oriented layer, and this oriented layer makes liquid crystal molecule be orientated equably on specific direction.This Jap.P. points out that oriented layer is formed by " macromolecular organic compound ".Two family macromolecule organic compounds in this patent, have been exemplified, i.e. polyimide and polyvinyl alcohol (PVA).But this patent is not put down in writing into image plane and is made into yellow phenomenon, and does not comprise to average headway and to the description of the relation between the reflectivity of special wavelength light composition yet.
The present invention has studied prior art.The inventor is according to the guidance of Japan patented claim 2000-258787 undetermined, made the existing sample that has the LCD panel of the reflecting electrode that aluminum-neodymium alloys forms.
Specific sample has different oriented layer 120 in substrate.In these samples, aluminium-neodymium is grown in substrate with about 200 ℃ temperature, and afterwards, forms oriented layer 120 on reflecting electrode 119.The present inventor dresses up specific sample to underlying structure S1/S2 and other component groups.The present inventor finds to have yellow one-tenth image plane in some samples.
Have the reflecting electrode of in 70 ℃ substrate, growing in other the sample, substrate is not heat-treated.Specifically, the present inventor has made thin film transistor (TFT) on the dielectric base of each sample, and is scattered with organic compounds to form inner insulation layer 117 on thin film transistor (TFT).In inner insulation layer 117, be formed for the contact hole of source area 113s, and on inner insulation layer 117 with specific base reservoir temperature deposition of aluminum neodymium alloy, wherein base reservoir temperature is in the scope of room temperature～70 ℃.The aluminium neodymium alloy is formed the pattern of reflecting electrode 119.Form after the oriented layer 120, underlying structure S1 and another underlying structure S2 assembling, thus finish each sample.These samples are divided into reflection type liquid crystal display and reflective-transmissive LCD panel by type.The present inventor drives sample and finds, carries picture signals and is not written on the pixel capacitors fully.This is because too high this fact of contact resistance between reflecting electrode 119 and the source area 113s.In addition, substrate not being heat-treated under the situation of the aluminum-neodymium alloys of growing, since hot condensing in the aluminum-neodymium alloys deposition, the temperature rising of inner insulation layer 117, and permeation takes place in organic compound.This gas causes the variation of aluminium-neodymium quality, and makes that reflecting electrode 119 surfaces are inhomogeneous.Cause the decline of reflectivity like this.
The inventor has also made the sample of disclosed electro-optical device among the Japanese patented claim 2000-111906 undetermined.This sample has from lower floor and shifts and the minute protrusions of coming.But this minute protrusions can not resist flaxen one-tenth image plane effectively.
These problems also run in the disclosed available liquid crystal display board of Japan patented claim 2000-258787 undetermined.
Summary of the invention
Therefore, an important purpose of the present invention is to provide a kind of LCD panel, although the oriented layer in the liquid crystal board to the transmissivity of ultraviolet light less than to visible light transmittance, can break away from flaxen one-tenth image plane.
Another object of the present invention is to provide a kind of method of making this LCD panel.
According to an aspect of the present invention, a kind of LCD panel that provides comprises: a kind of LCD panel comprises: suprabasil conductive strips; The switching transistor that links to each other with described conductive strips; With the reflecting electrode that links to each other with described switching transistor, wherein, the average headway of the unevenness on the surface of described reflecting electrode (irregularity) is to be equal to or less than 1 micron.
According to a further aspect in the invention, provide a kind of LCD panel, having comprised: suprabasil conductive strips; The switching transistor that links to each other with described conductive strips; With the reflecting electrode that links to each other with described switching transistor, wherein, described reflecting electrode is for the light reflectivity 90% with 400 nano wave lengths for the reflection of light rate of wavelength region may between 200 nanometers and 400 nanometers at least.
According to a further aspect in the invention, provide a kind of method of making LCD panel, comprised step: make suprabasil conductive strips; Switching transistor is linked to each other with described conductive strips; With reflecting electrode is linked to each other with described switching transistor; Wherein, be equal to or less than the described reflecting electrode of formation under the temperature Celsius 170 ℃.
According to a further aspect in the invention, provide a kind of LCD panel, having comprised: suprabasil conductive strips; The switching transistor that links to each other with described conductive strips; The reflecting electrode that links to each other with described switching transistor; With the oriented layer that is formed on the described reflecting electrode, wherein, described oriented layer has to the light of wavelength region may between 600 nanometers 300 nanometers and is equal to or greater than 95% transmissivity.
Description of drawings
By the detailed description of carrying out below with reference to accompanying drawing, will have more clearly the characteristics of LCD panel of the present invention and manufacture method thereof and advantage and to understand, wherein:
Fig. 1 is the structural section figure of disclosed existing reflection type liquid crystal display among the Japanese patented claim 2000-258787 undetermined of expression;
Fig. 2 is the structural section figure according to reflection type liquid crystal display of the present invention;
Fig. 3 is the arrangement of components planimetric map that is incorporated into the underlying structure in the reflection type liquid crystal display;
Fig. 4 is the arrangement of components planimetric map that is incorporated into another underlying structure in the reflection type liquid crystal display;
Fig. 5 is the thin film transistor (TFT) on the described underlying structure of Fig. 3 and the profile planimetric map of reflecting electrode;
Fig. 6 A～6I is the sectional view of Fig. 5 along the B-B line, and the flow process of LCD panel is made in expression;
Fig. 7 A～7E is the manufacturing process sectional view that is illustrated on another cross section;
Fig. 8 A～8E is another process step sectional view of making another LCD panel of the present invention;
Fig. 9 is the disposition-plan that is introduced in the pixel assembly in another LCD panel of the present invention;
Figure 10 A～10K is a flow process sectional view of making LCD panel;
Figure 11 is the structural section figure of another LCD panel according to the present invention;
Figure 12 be an expression in the sputter base reservoir temperature and the relation curve of spacing;
Figure 13 is the curve of an expression to the relative reflectance of light component;
Figure 14 is the relative reflectance curve of the aluminum-neodymium alloys layer of an expression 150nm to light component;
Figure 15 is the relative reflectance curve of the aluminum-neodymium alloys layer of an expression 300nm to light component;
Figure 16 is one and is illustrated in the relation curve between the transmissivity and light component in the different organic compounds;
Figure 17 is the relational view between expression neodymium content and separating out unusually/reflectivity;
Figure 18 is expression base reservoir temperature, the graph of a relation between the color, reflectivity and the contact resistance that become on the image plane.
Embodiment
First embodiment
Referring to the Fig. 2 in the accompanying drawing, the LCD panel of the embodiment of the invention is pair of substrates structure 10/20 basically, liquid crystal LC2, sealant 23 and spherical spacers 35.Underlying structure 10 and 20 toward each other, sealant 23 and spherical spacers 35 keeps underlying structures 10 and 20 to separate each other.Specifically, sealant 23 extends along the periphery of underlying structure 10/20, and spherical spacers 35 is dispersed in the inside of sealant 23.Sealant 23 and spherical spacers 35 are clipped between underlying structure 10 and 20, and liquid crystal LC2 fills the space that is limited by underlying structure 10/20 and sealant 23.Ellipse among the figure is represented liquid crystal molecule, represents with label 36.
The following while is referring to figs. 2 and 3 underlying structure 10 is described.Underlying structure 10 is produced on the transparent insulation substrate 10a, comprises the conductive strips 11 that are used for sweep signal, is used for the conductive strips 12 of data-signal, is used for the conductive strips 13 of constant voltage, thin film transistor (TFT) battle array 14 row and reflecting electrodes 31.The conductive row 11 that is used for sweep signal extends in parallel on transparent insulation substrate 10a, and is connected to the gate electrode of thin film transistor (TFT) 14 row.Sweep signal offers conductive strips 11 through signal end 15, thereby makes the row conducting successively of thin film transistor (TFT) 14.
The conductive strips 12 that are used for data-signal extend in the direction perpendicular to the conductive strips 11 of sweep signal, and are connected to the drain region of thin film transistor (TFT) row 14.Data-signal offers conductive strips 12 through signal end 16, thereby will represent the data message of the image that produces to be assigned to thin film transistor (TFT) 14 row.Intersect in the conductive strips 11 that are used for sweep signal though be used for the conductive strips 12 of data-signal, the conductive strips 12 that are used for data-signal are by gate insulation layer 53 and conductive strips 11 electrical isolations that are used for sweep signal.Thereby the conductive strips 11 that are used for sweep signal limit a plurality of point of crossing with the conductive strips 12 that are used for data-signal on the center of transparent insulating layer 10a, and a plurality of point of crossing is assigned to thin film transistor (TFT) 14 respectively.
Though the port one 6 that is assigned to the port one 5 of sweep signal and is assigned to data-signal is along scan line and along the capable distribution of end of underlying structure among Fig. 3 10, but for portable applications, port one 5/16 can be along the skidding distribution (see figure 4) of reflection type liquid crystal display underlying structure.
The conductive strips 13 that are used for constant voltage are parallel to conductive strips 11 extensions of sweep signal, and widen at gap location.The wider portion of conductive strips 13 links to each other with thin film transistor (TFT) 14 respectively, and serves as the counter electrode that keeps capacitor.Port one 8 is connected to conductive strips 13 through specifying band (distributing strip) 17, and wherein conductive strips 17 extend in the both sides of conductive strips 12, and is with 17 common electric voltage is applied to conductive strips 13 through port one 8 and appointment.Common electric voltage finally arrives counter electrode.
Reflecting electrode 31 is pressed matrix distribution, and is connected respectively to the source area of thin film transistor (TFT) 14.Thereby reflecting electrode 31 serves as pixel capacitors respectively.Between thin film transistor (TFT) 14 arrays and reflecting electrode 31, insert intermediate insulating layer 32, and reflecting electrode 31 is relative with counter electrode under it respectively.The array of reflecting electrode 31 is oriented layer 34 and covers.Oriented layer 34 is formed by organic compound, and this makes into the image plane jaundice.
Intermediate insulating layer 32 is formed with bigger projection, and these bigger projectioies make that reflecting electrode 31 is uneven.Reflecting electrode 31 has the configuration of surface smooth upper surface.The unevenness average headway of upper surface is equal to or less than 1 micron.Average headway is equal to or less than 0.6 micron better.Level and smooth configuration of surface prevents into the image plane jaundice.This is because level and smooth configuration of surface reduces the absorption to the ultraviolet light of 200nm～400nm wavelength.The unevenness of reflecting electrode 31 upper surfaces is with bigger protruding different.In this instructions, " configuration of surface " means the distinguishing the flavor of surface irregularity of crystal structure of crystal.
On transparent insulation substrate 20a, make another underlying structure 20.As seen in fig. 4, in the center of transparent insulation substrate 20a, make color filter patterns 21, and surround colored filter 21 by black matrix" 22.In this example, black matrix" 22 is formed on the peripheral region, the zone of not plying in the centre.Black matrix" makes that the contrast of image is higher.Colored filter 21, be that Red lightscreening plate, green color filter and blue color filter align with reflecting electrode 31 respectively and covered by counter electrode 33.Counter electrode 33 is oriented layer 34 and covers.Common electric voltage imposes on counter electrode 33.In other words, counter electrode 33 equates with the counter-electrode potential that keeps capacitor.The oriented layer 34 of underlying structure 10 separates by the oriented layer 34 of sealant 23 and spherical spacers 35 and another underlying structure 20, and liquid crystal LC2 fills the gap between the oriented layer 34.Liquid crystal LC2 injects by the opening that is formed in the sealant 23, opening connector 24 closures.The cross section of pecked line A-A and C-C shown in pecked line A-A and the C-C presentation graphs 2.
Thin film transistor (TFT), the reflecting electrode 31 that is connected to thin film transistor (TFT), the colored filter 21 that aligns with reflecting electrode, reflecting electrode 33 and liquid crystal LC2 therebetween constitute a pixel.Colour element of the common formation of one group of optical filter of red, green and blue, the reflecting electrode 31 that aligns with it, the thin film transistor (TFT) 14 that is connected to reflecting electrode 31 and liquid crystal LC2 therebetween.Promptly have the pixel of Red lightscreening plate, total each color image of formation of pixel that has the pixel of green color filter and have blue color filter, and a plurality of colour element forms imaging plane.
Underlying structure 20 also has quarter wave plate 37 and polaroid 38.Quarter wave plate 37 is fixed to the surface of transparent insulation substrate 20a, and this surface is reverse with the surface that makes colored filter 21 and black matrix" 22 patterns, and covers quarter wave plates 37 with polaroid 38.
Although do not illustrate in Fig. 4, semi-conductor chip is installed on the end 16, and the driving circuit on the semi-conductor chip links to each other with LCD panel.LCD panel and COG (Chip-ON-Glass) integrated circuit is made liquid crystal display of as a whole formation.
The operation of liquid crystal display is as follows.Sweep signal makes the capable conducting of film tube 14 successively, and data-signal will represent the data message of a part of image be sent to the capable corresponding reflecting electrode 31 of selected thin film transistor (TFT) on.Data-signal arrives selected reflecting electrode 31, and is created in the internal field between selected reflecting electrode 31 and the common electrode 33.Make liquid crystal molecule 36 rising (raised) selectively in this internal field.When data-signal reached with the corresponding reflecting electrode 31 of the thin film transistor (TFT) 14 of last row, liquid crystal LC2 became partially transparent, reflects incident light 39 on reflecting electrode 31.Reflected light 40 forms formation image on the surface by transparent liquid crystal layer LC2 at image.
Incident light passes each oriented layer 34 twice.If reflecting electrode has by the rough surface form of representing greater than 1 micron average headway, oriented layer is in the wide variety of thickness direction, and the light path in the oriented layer 34 between incident ray according to incidence point and difference.In the reflective liquid crystal display board, optical path difference increases twice.Oriented layer 34 is formed by organic compound, this organic compound to the transmissivity of ultraviolet light much smaller than to visible light transmittance.When light 39 was propagated in oriented layer 34, the ultraviolet light composition was absorbed more than the visible light composition.This result causes the yellow C of one-tenth as the plane.
On the contrary, reflecting electrode 31 according to the present invention has the rough surface form of being represented by the average headway that is equal to or less than 1 micron.Oriented layer 34 is even substantially on thickness direction, and the light path approximately equal of the light path of incident beam 39 and another incident beam 39.Even light beam passes oriented layer 34 twice, optical path difference is not remarkable yet, and oriented layer does not absorb the ultraviolet light composition.Thereby the reflecting electrode 31 with smooth surface morphology suppresses the jaundice of imaging plane effectively.
Referring to Fig. 5,6A～6I and 7A～7E the manufacture method of LCD panel is described.Fig. 5 represents to be connected respectively to the thin film transistor (TFT) 14 of reflecting electrode 31.Thin film transistor (TFT) 14 shown in Fig. 5 is positioned at the outermost locations of array.Thin film transistor (TFT) 14 has reverse ledge structure, the cross section shown in pecked line B-B presentation graphs 6A～6I.Fig. 7 A-7E represents the cross section of underlying structure 10 neighboring areas.Cross section is along the line intercepting that is parallel to port one 5/16/18 minor face.
For method can clearly be understood, be described with reference to the profile of 5 pairs of colour elements of figure and structure thereof.As shown in Figure 5, the conductive strips 11 of sweep signal extend parallel to each other, and the conductive strips 12 of data-signal extend perpendicular to conductive strips 11.The conductive strips 13 of common electric voltage additionally are parallel to conductive strips 11 and extend also near the conductive strips 11 that link to each other.Conductive strips 11 and 12 limit a plurality of rectangular areas, and thin film transistor (TFT) 14 occupies the rectangular area respectively.The wider portion of conductive strips 13 extend into rectangle region and relative with the reflecting electrode 31 that links to each other respectively.Intermediate insulating layer 32 is clipped between wider portion and the reflecting electrode 31, makes to produce on rectangle region respectively to keep electric capacity.The structure of thin film transistor (TFT) 14 is similar each other.Each thin film transistor (TFT) 14 has a gate electrode 41, gate insulation layer 53 (seeing Fig. 6 B), 42, source electrodes 43 of a drain electrode and an active layer (active layer) 44.Unadulterated amorphous silicon layer 44a and heavily doped n type amorphous silicon layer 44b form activity (seeing Fig. 6 B).
The pattern of the conductive strips 11 of the gate electrode 41 of formation thin film transistor (TFT) 14 and sweep signal on the first type surface of transparent insulation substrate 10a, gate electrode 41 and conductive strips 11 merger (merged) of sweep signal accordingly.Each gate electrode 41 is deleted insulation course 53 and is covered, and on the gate insulation layer 53 to be positioned at the pattern that mode on the corresponding gate electrode 41 forms active layer 44.Each active layer 44 serves as the drain region and the source area of thin film transistor (TFT) 14.
On gate insulation layer 53, form the conductive strips 12 of drain electrode 42, source electrode 43 and data-signal.Drain electrode 42 contacts in active layer 14 with the drain region with conductive strips 12 merger that link to each other and maintenance.On the other hand, source electrode 43 remains in the active layer 14 and contacts with source area.The conductive strips 12 of drain electrode 42, source electrode 43 and data-signal are passivated layer 54 and cover (seeing Fig. 6 D).Passivation layer 54 prevents that thin film transistor (TFT) is damaged, and on passivation layer 54 stacked two insulation courses 51 and 52.Insulation course 51 forms very steep projection, and other insulation course 52 makes steep projection become moderate.Thereby insulation course 51 and 52 produces former projection, for forming bigger projection, these projectioies is transferred to reflecting electrode 31.Bigger projection produces uniform reflection characteristic on imaging plane.For this reason, insulation course 51 irregularly is formed on the center of the underlying structure 10 that is assigned to colour element.But insulation course 51 does not extend to the peripheral region that is assigned to port.On the other hand, insulation course 52 extends on the center and penetrates the peripheral region, makes former projection be insulated layer 52 and covers in good condition.Passivation layer 53 and insulation course 51/52 are made as a whole formation intermediate insulating layer 32.
Source contact hole 45 is formed in insulation course 51/52 and the passivation layer 54.Source contact hole 45 arrives source electrode 43 respectively.Reflecting electrode 31 is formed on the insulation course 52 and occupies the rectangular area respectively.Reflecting electrode 31 passes source electrode contact hole 45 respectively and keeps contacting with source electrode 43.
Former projection is transferred to reflecting electrode 31 from insulation course 51, and bigger projection is given the optical characteristics that reflection 40 is scheduled to.Thereby big projection profoundly is related to the picture quality that is formed on on the image plane.For this reason, big convex design is become into the realization optical characteristics.In design effort, the spacing of projection, paddy spacing, the height of projection and the degree of depth of paddy all will be taken into account.The design of big projection makes one of spacing, height and degree of depth have a more than value, and promptly two kinds are worth or more than two kinds of values.
Fig. 6 A～6I and 7A-7E represent the job sequence that comprises the following steps: (1) to metal level pattern-making to form gate electrode 41, port one 5/16/18 and conductive strips 11/13, (2) on gate insulation layer, make amorphous silicon layer to form active layer 44, (3) make metal layer pattern to form in conductive strips 12 and the source/drain electrode 43/42, (4) in passivation layer 54, form contact hole, (5) molded transparency conducting layer in the port connection electrode, (6) mold insulation layer in former projection, (7) in being deposited on former projection insulation course 52 at least, form contact hole and (8) molded metal level in reflecting electrode 31.
This process originates in the preparation of transparent insulation substrate 10a.Transparent insulation substrate 10a is made by non-alkali glass, 0.5 millimeters thick.Sputter chromium target, thus on the whole surface of transparent insulation substrate 10a, deposit the thick chromium layer of 100nm～300nm.Preparation photoresist mask (not shown) on the chromium layer, and etching chromium layer partly.Gate electrode 41, the conductive strips 11 that are used for sweep signal, the metal level 61 that is used for the conductive strips 13 of common electric voltage and is used for port one 5/16/18 are stayed the first type surface of transparent insulation substrate 10a.Though can't see conductive strips 11 that are used to scan and the conductive strips 13 that are used for common electric voltage, Fig. 6 A and 7A show final structure.
Gate electrode 41, conductive strips 11/13 and metal level 61 can be formed by another metal or alloy, and metal/alloy is formed a film and forms pattern.Illustrate in passing, another metal/alloy can be Mo, Al or aluminium alloy.Gate electrode 41, conductive strips 11/13 and metal level 61 can have sandwich construction, and for example, aluminium, aluminium alloy or molybdenum layer are covered by chromium, molybdenum or titanium restraining barrier.
Subsequently, utilize the auxiliary chemical vapour deposition technique of plasma with silicon nitride, be the thickness that SiNx deposits to 300nm～500nm on the whole surface of resulting structures, and form gate insulator 53.Gate electrode 41 and metal level 61 are covered by gate insulator 53.Fig. 7 B represents the metal level 61 that covered by gate insulator 53.
Also utilize the auxiliary chemical vapour deposition technique of plasma on gate insulator 53, to deposit the thick undoped amorphous silicon of 150nm-300nm, and the n type amorphous silicon 30nm-50nm of deposition of heavily doped is thick again.Unadulterated amorphous silicon forms unadulterated amorphous silicon layer, and heavily doped n type amorphous silicon forms n on the undoped amorphous silicon layer
+The type amorphous silicon layer.Utilize photoetching technique to prepare the photoresist etching mask, and make unadulterated amorphous silicon layer and n again
+The type amorphous silicon layer is to form unadulterated amorphous silicon ribbon 44a and n
+Type amorphous silicon ribbon 44b is shown in Fig. 7 B.Unadulterated amorphous silicon ribbon 44a and n
+Type amorphous silicon ribbon 44b is combined to form active layer 44, and active layer 44 is distributed on the gate electrode 41 with interval.n
+Type amorphous silicon ribbon 44b and source/drain electrode 43/42 forms Ohmic contact.
Subsequently, utilize sputtering technology on the whole surface of resulting structures, to deposit the thick chromium layer of 100nm-300nm.Utilize photoetching technique to prepare the photoresist mask.Utilize the photoresist mask, make the chromium layer pattern to form drain electrode 42, source electrode 43 and to be used for the conductive strips 12 of data-signal by dry etching technology.
Leakage/source electrode 42/43 and conductive strips 12 can be formed by another metal or alloy, and metal/alloy is formed a film and forms pattern.Illustrate in passing, another metal/alloy can be Mo, Al or aluminium alloy.Conductive strips 12 and source/drain electrode 42/43 can have sandwich construction, and for example, aluminium, aluminium alloy or molybdenum layer are covered by chromium, molybdenum or titanium restraining barrier.
Leakage/the source of utilization electrode 42/43 is as etching mask, by adopting partly etching n of dry etching technology
+Type amorphous silicon ribbon 44b, and the Ohmic contact part that is separated from each other.Thereby, only in unadulterated amorphous silicon ribbon 44a, form channel region, control the conductivity of channel region by the gate potential at relevant gate electrode 41 places.In other words, electric current can directly partly not flow in Ohmic contact.The structure of gained is shown in Fig. 6 C.
Subsequently, utilize the auxiliary chemical vapour deposition technique of plasma on the whole surface of resulting structures, to deposit the thick silicon nitride of 100nm-300nm, and form passivation layer 54.Cover drain electrode 42 and source electrode 43 with passivation layer 54, and passivation layer 54 cover gate insulation courses 53 (seeing Fig. 7 C) are arranged.Passivation layer 54 avoids unadulterated amorphous silicon ribbon 44a to enter useless ion, makes can not break down in the thin film transistor (TFT) 14.
On passivation layer 54 by utilizing photoetching technique to prepare the photoresist etching mask.Utilize the photoresist etching mask, partial etched grid insulation course 53 and/or passivation layer 54, forming contact hole 55/62, and source electrode 43 and metal level 61 be exposed to contact hole 55/62, shown in Fig. 6 D and 7D.Though do not illustrate in the accompanying drawings, contact hole side by side is formed in passivation layer 54 and/or the gate insulator 53, makes the conductive strips 12 that are used for the conductive strips 13 of common electric voltage, the metal level 61 that is used for data-signal and adjacent metal layers 61 be exposed to contact hole.
Though, utilize the thick transparent metal of sputtering technology deposition 40nm-100nm, as ITO (tin indium oxide), and make indium tin oxide layer again forming the connection electrode 63 that keeps in touch with metal level 61, be used for port one 5/16/18, interconnection with 17 and conductive strips 12 and port one 6 between interconnection.But, in the center of specifying image one-tenth image plane, stay tin indium oxide.Reason for this reason is if source electrode 43 by molybdenum or be clipped in the aluminium between the molybdenum or the aluminium alloy that is clipped between the molybdenum forms, then utilizes the class etchant etching tin indium oxide to the molybdenum inertness.The etchant that contains oxalic acid can be used for etching.On the other hand, if source electrode 43 by chromium, aluminium be clipped in chromium or titanium between aluminium form, then etchant can be chloroazotic acid series or iron chloride series.The reason of removing tin indium oxide from the central area that is assigned to into image plane is that tin indium oxide forms battery (battery) with aluminium.Even tin indium oxide is laminated on the source electrode 43, because the battery phenomenon, indium tin oxide layer is also peelled off easily.Indium tin oxide layer 63 on the metal level 61 has strengthened the reliability that COG (chip is on glass) installs.Fig. 7 E represents one of port one 5/16/18 of being realized by the stacked of metal level 61 and indium tin oxide layer 63.
Subsequently, on the structure of gained, spread all over photosensitive promise clarke (novolak) resin solution alive, and form the photosensitive novolak resin of 1 micron～3 micron thickness.The graphic design of former projection is transferred to photosensitive novolak resin layer, and in alkaline development solution latent image is developed again.Then, in being assigned to into the center of image plane, form irregular projection (seeing Fig. 6 E) in the photosensitive promise clarke insulation course 51 alive.Limit projection by cliff.Be used for the situation of insulation course 51 at photoactive substance, produce former projection by the program that comprises the following steps: to photosensitive substance layer, develop to the latent image that produces in photosensitive substance layer (3) with design transfer for (1) spread photoactive substance, (2).
Subsequently, make cliff become moderate.Structure shown in Fig. 6 E is put in the calcining chamber, and projection is carried out 80 ℃～200 ℃ heat treated.The raised surface part refluxes under hot environment, and cliff becomes mild wall.Thereby, be formed with former projection by backflow insulation course 51.Former projection can form by the part of melted surface in chemical solvent, and solvent for example is that N-methyl-2 pyrrole is pressed against gastral cavity ketone (N-methyl-2-pyrrolidone).Baking of resin under 200 ℃～250 ℃ temperature obtains the insulation course that has former projection 51 shown in Fig. 6 F.
Subsequently, the photosensitive promise of spread clarke solution alive on the whole surface of resulting structures, and form thickness at 0.3 micron～1.5 microns photosensitive promise clarke layer alive.The image transfer of pattern is arrived photosensitive promise clarke layer alive, and in alkaline-based developer, latent image is developed again.Then, in living the clarke layer, photosensitive promise forms contact hole 45.Under 200 ℃～250 ℃ temperature, toast photosensitive promise clarke layer alive, and cover insulation courses 51 with insulation course 52.Contact hole 55 is nested in the contact hole 45, and source electrode 43 is exposed in the contact hole 45, shown in Fig. 6 G.
In this example, insulation course 51/52 is formed by the organic compound in the promise clarke series alive.The another kind of material that can be used for insulation course 51/52 is the PC403 that JSP makes.Insulation course 51 can be different materials with 52.For example, acryl resin and polyimide can be selected for insulation course 51 and 52.The combination property of organic substance and dead matter can be selected for insulation course 51 and 52.The composition of the composition of silicon nitride and acryl resin and monox and polyimide is exactly the example of the composition of organism and inorganics.On any one insulation course 51 of organic/inorganic material layer, form former projection.
In first embodiment, photoetching technique is used for insulation course 51/52.Insulation course 51/52 can form by printing technology.Printing technology makes this process simplify.The other technologies that can be used for insulation course 51/52 are wet methods, as liquid growth technology and dry method, as the plasma polymerization technology.Thereby the various insulating material layers that can observe the permeation effect are known as " insulation course 51/52 ".
Subsequently, utilize sputtering technology on resulting structures, to deposit molybdenum respectively, be the aluminium neodymium alloy afterwards that thickness is 50nm-200nm and 100nm-300nm, and on interlayer insulating film 32 stacked molybdenum layer and aluminium neodymium layer.Molybdenum layer contacts with source electrode 43 by contact hole 45/55 and maintenance.
Utilize photoetching technique on aluminium neodymium layer, to prepare the photoresist etching mask, and under 40 ℃～60 ℃, carve aluminium neodymium layer and molybdenum layer, to form the reflecting electrode 31 shown in Fig. 6 H by coming wet quarter to wet selectively.Wet agent at quarter comprises phosphoric acid, acetate and nitric acid.Because reflecting electrode 31 is also as pixel capacitors, reflecting electrode 31 separates along conductive strips 11 and conductive strips 12 compartment of terrains.Remove the molybdenum layer and the aluminium neodymium layer of neighboring area.Thereby molybdenum layer and aluminium neodymium layer can not stayed on the port one 5/16/18 at all.Molybdenum layer serves as the barrier metal between indium tin oxide layer 63 and the aluminium neodymium layer.And when forming aluminium neodymium layer pattern, barrier metal prevents that indium tin oxide layer 63 from being invaded by wet etchant.If wet etchant arrives indium tin oxide layer 63, then between indium tin oxide layer 63 and aluminium neodymium layer, produce battery, and indium tin oxide layer 63 is easy to break away from undesirablely.Thereby molybdenum layer should be thick in being enough to prevent that indium tin oxide layer 63 from advancing wet etchant.
Describe sputtering condition below in detail.At first, the resulting structures shown in Fig. 6 G is inserted in the heating chamber, and in 70 ℃～170 ℃ vacuum environment, underlying structure was heated 1-2 minute.Evaporation water in hot environment, and water eliminated from insulation course 51/52.When water is eliminated, underlying structure is sent to sputtering chamber from heating chamber from insulation course 51/52.In sputtering chamber, form vacuum, and in sputtering chamber, molybdenum and aluminium neodymium alloy are deposited on the underlying structure successively.
Be preferably in the sputtering chamber that is independent of heating chamber and form vacuum.If carry out heating operation and sputter in single chamber, then the steam from insulation course 51/52 outgases and will change the quality of splash-proofing sputtering metal/alloy, and the contact resistance between reflecting electrode and the source electrode will increase undesirablely.If carry out heating and sputter in same chamber, then heating prolongs 2-5 minute, and gas componant will be discharged from the chamber ideally during sputter.
Chen Ji aluminium neodymium alloy does not have wrinkling surface under these conditions, and therefore realizes very high reflectivity.And the contact resistance between source electrode 43 and the reflecting electrode 31 is very low and stable.
Base reservoir temperature between molybdenum deposition and the aluminium neodymium deposition can be different.Preferably the base reservoir temperature in the molybdenum deposition is higher than the base reservoir temperature in the aluminium neodymium deposition.For example, deposition molybdenum when base reservoir temperature is 150 ℃ Celsius, for example base reservoir temperature is 120 ℃ Celsius in the deposition of aluminium-neodymium.This is because will make the crystal variation of molybdenum with low relatively underlying structure temperature deposition.Crystal inferior is influential in the crystal of aluminium neodymium alloy, and crystal inferior does not allow wet etchant to form thin profile in reflecting electrode 31.Certainly, base reservoir temperature can equate between deposition molybdenum and deposition of aluminum neodymium alloy.
Preferably, the aluminium neodymium alloy comprises the neodymium of weight ratio 0.5% at least.Can effectively prevent when the content of neodymium is equal to or greater than weight ratio 0.5% separating out unusually on oriented layer 34 during the roasting, and keep the reflectivity height.Further, be preferably in during the deposition of aluminum neodymium alloy underlying structure temperature and remain on 170 ℃ or lower Celsius.Celsius 170 ℃ or more low temperature deposition can make the average headway of the configuration of surface on the reflecting electrode 31 be equal to or less than 1 micron.Gained aluminium-neodymium electrode has been realized the reflection of light rate of wavelength 200nm-400nm is equal to or greater than 90%, for the visible light of wavelength 400nm.Can effectively prevent the picture plane jaundice that forms to the high reflectance of the light of wavelength 200nm-400nm, no matter which kind of material is alignment films 34 be.But, do not advocate that neodymium content is greater than weight ratio 10%.If neodymium content overweight is than 10%, then reflecting electrode 31 crumples, and can not realize high reflectance to the visible light composition.Thereby the preferable range of neodymium content is weight ratio 0.5%-10%.
In this example, in the method for making thin film transistor (TFT) 14, from the viewpoint of high reflectance and good alignment, the aluminium neodymium alloy is desirable.But any metal or alloy may be used to reflecting electrode 31, as long as metal/alloy demonstrates high reflectance.Another kind of aluminium alloy such as aluminum titanium alloy or aluminium molybdenum alloy also can be used for reflecting electrode 31.Equally, reflecting electrode 31 also can be formed by the metal of highly reflective, as silver.
At last, on the array of reflecting electrode 31, form oriented layer 34.Specifically, on resulting structures, be printed with organic compounds by printing technology.Organic compound layer is that 50nm-100nm is thick.Under 200 ℃～230 ℃ temperature, toast organic compound layer and make it trend.The result obtains underlying structure 10.
In transparent insulation substrate 20, be independent of said procedure ground and make other underlying structure 20.On transparent insulation substrate 20a, make colored filter 21 patterns, and on colored filter 21, deposit tin indium oxide to form counter electrode 33.In the neighboring area of colored filter 21, form black matrix" 22.The thick organic compound of 50nm-100nm is printed onto on the counter electrode 33, and under 200 ℃～230 ℃ temperature, toasts organic compound layer.Finish oriented layer 34 by orientation process.Preferably organic compound makes oriented layer realize that light component to 300nm～600nm wavelength has and is equal to or greater than 95% transmissivity.
Scatter the spherical spacers 35 of synthetic resin in the central area of substrate 10, and the sealant of epoxy resin series is set along the edge of underlying structure in the neighboring area.Also assembling of the underlying structure that shown in Fig. 6 I, faces with each other 10 and 20.Spherical spacers 35 keeps underlying structure 10 and 20 to separate predetermined gap.Sealant has an opening (see figure 4), and by opening liquid crystal LC2 is injected in the gap.Opening seals with the ultraviolet curable resin in the acrylates series 24, and curing ultraviolet curable resin 24.Liquid crystal LC2 is limited in the space between underlying structure 10 and 20 thus.
Quarter-wave plate 37 and polaroid 38 are bonded to transparent insulation substrate 20a in succession.Though not shown, be placed in the neighboring area of resulting structures at semi-conductor chip, the conductive gasket of semi-conductor chip is connected to the port one 5/16/18 that is used for sweep signal, data-signal and common electric voltage.
Can know that from the description of front LCD panel according to the present invention comprises having the reflecting electrode that average headway is equal to or less than 1 micron smooth surface morphology.Level and smooth configuration of surface has reduced the absorption to the light of 200nm-400nm wavelength, and has avoided becoming the jaundice of image plane.
In addition, though the aluminium neodymium alloy is grown being equal to or less than under 170 ℃ the base reservoir temperature, the configuration of surface average headway of aluminium neodymium alloy layer is equal to or less than 1.0 microns.
Second embodiment
Similar and first embodiment of another LCD panel of the invention process is the interlayer insulating film between thin film transistor (TFT) 14 arrays and reflecting electrode 31.Reason for this reason, other layer, band and substrate are used in layer corresponding among first embodiment, the label that band is identical with substrate.Below with reference to Fig. 5,6A-6D, 7A-7E and 8A-8E the method for making the LCD panel among second embodiment is described.Fig. 8 A-8E represents along the sectional view of B-B line among Fig. 5.
The method comprising the steps of: (1) makes metal layer pattern to form gate electrode 41 and the conductive strips 11 that are used for sweep signal, (2) on gate insulation layer 53, make not dopings/n+ amorphous silicon layer with formation active layer 41, (3) make metal layer pattern with formation source/drain electrode 43/42 and the conductive strips 12 that are used for data-signal, (4) form passivation layer 54, (5) make the electrically conducting transparent layer pattern to be formed on port connection electrode 63, (6) in interlayer insulating film 71, form former projection and (7) and make the alloy-layer pattern to form reflecting electrode 31.
This process originates in the preparation of transparent insulation substrate 10a, and step wherein (1)～(5) are similar to first embodiment.On transparent insulation substrate 10a, make thin film transistor (TFT) 14 arrays, passivation layer 54, be used for sweep signal port one 5, be used for the port one 6 of data-signal and be used for the pattern of the port one 8 of common electric voltage, shown in Fig. 7 E and Fig. 8 A.
Subsequently, the photosensitive promise of spread clarke solution alive on the structure of gained, and form thickness at 2.0 microns～4.5 microns photosensitive promise clarke layer alive.Intermediate tone mask is alignd with resulting structures, and the image of pattern is transferred to photosensitive promise clarke layer 71 alive from intermediate tone mask, shown in Fig. 8 B.Intermediate tone mask has a transparent pattern, a translucent pattern and an opaque pattern.Transparent pattern is transparent to exposure light, and opaque pattern can not pass through exposure light.Exposure light is partially absorbed by translucent pattern.Opaque pattern is appointed as not etched regional 72a, i.e. the highland part of interlayer insulating film 71, and translucent pattern is appointed as partially-etched regional 72b, the i.e. valley floor of interlayer insulating film 71.Transparent pattern is appointed as by complete etched other parts 72c.Intermediate tone mask designs in the mode of the contiguous transparent pattern of translucent pattern.Use the rayed intermediate tone mask, carry and to resemble light beam and fall into photosensitive novolak resin layer 71.Carry and to resemble light beam and in photosensitive novolak resin layer 71, form latent image.
Latent image is developed.In substrate, stay and opaque pattern region aligned, and remove and the transparent pattern region aligned from this structure.Partially-etched and translucent pattern region aligned make to form the valley floor in interlayer insulating film 71.The contiguous transparent pattern of translucent pattern.In other words, opaque pattern not with the transparent pattern adjacency.Though form projection in interlayer insulating film 71, interlayer insulating film 71 has the mild profile shown in Fig. 8 C.
Intermediate tone mask changes the intensity of exposure light, and the chromatic dispersion of latent image in the degree of depth is corresponding to the chromatic dispersion in the light intensity.Latent image can form by changing the time shutter.Therefore, in single interlayer insulating film 71, form projection.Interlayer insulating film 71 is corresponding to two insulation courses 51 and 52.Thereby, can form projection by better simply program.
Subsequently, resulting structures is heat-treated, and interlayer insulating film 71 is refluxed with 80 ℃～200 ℃ temperature.It is mild that the surface of interlayer insulating film 71 becomes.Mild surface can form by chemical reagent.Under 200 ℃～250 temperature, toast interlayer insulating film, and in interlayer insulating film 71, form former projection, shown in Fig. 8 D.
Similar and first embodiment of remaining process.Utilization sputters on the whole surface of resulting structures and deposits the molybdenum of 50nm-200nm and the aluminium neodymium of 100nm-300nm in succession.Preheat similar and first embodiment with sputtering condition.Make aluminium neodymium layer and molybdenum layer pattern to form reflecting electrode 31, shown in Fig. 8 E by photoetching and etching.Reflecting electrode 31 has the smooth surface morphology that average headway is equal to or less than 1.0 microns.
Cover the array of reflecting electrode 31 and the exposed of interlayer insulating film 71 with oriented layer 34.Be similar to the first embodiment ground and make other underlying structure 20.Underlying structure 10 and 20 is assembled into together, and in the gap of sealing liquid crystal between underlying structure 10 and 20.
Reflecting electrode 31 has the smooth surface morphology that spacing is equal to or less than 1.0 microns, and realizes that the light component of 200-400nm wavelength is had very high reflectivity.The high reflectance of these light components has been suppressed to become effectively the jaundice of image plane.
Because reflecting material is grown under the condition that is similar to first embodiment, so realized level and smooth configuration of surface.And, in interlayer insulating film 71, form former projection by simple program, and therefore reduced cost of manufacture.
Can replace intermediate tone mask with one group of photomask.In this example, utilize a photomask to produce, and utilize other photomask to produce by the latent image of complete etched regional 72c by the latent image of partially-etched regional 72b.Equally, can utilize another kind of intermediate tone mask to produce latent image, this latent image has the pattern of very fine, surpasses the resolution limit of exposure light, and the light that passes the very fine pattern produces by the latent image in partially-etched zone.
The 3rd embodiment
Turn over referring to Fig. 9, in another LCD panel of the present invention, some pixels occupy the central area that is assigned to the color pixel array around.The LCD panel of implementing in the 3rd embodiment is categorized as the reflective-transmissive LCD panel.Oppositely notch cuttype thin film transistor (TFT) 14, reflecting electrode 31, counter electrode 33 (seeing Figure 10 K) transparent pixel electrode 81, colored filter 21 (seeing Figure 10 K) and a kind of liquid crystal are combined to form a pixel, and the pixel that pixel with Red lightscreening plate, pixel with green color filter and have a blue color filter is made the as a whole color pixel that must constitute similar and first embodiment.
Be used for conductive strips 11 parallel distribution on transparent insulation substrate 10a of sweep signal, and be connected respectively to the gate electrode 41 of thin film transistor (TFT) 14 in the associated row.The conductive strips 13 that are used for common electric voltage are parallel to conductive strips 11 and distribute, and are alternately distributed with conductive strips 11.Conductive strips 13 have wide portions in the interval.The conductive strips 12 that are used for data-signal extend on the direction perpendicular to conductive strips 11/13, and are connected to the drain electrode 42 of thin film transistor (TFT) 14 in the related column.Thereby conductive strips 11 and conductive strips 12 are distributed on the transparent insulation substrate 10a as the grid, and limit the rectangular area that is assigned to pixel respectively.Thin film transistor (TFT) 14 occupies relevant rectangular area with wider portion, and is covered by relevant reflecting electrode 31 and transparent pixel electrode 81.Reflecting electrode 31 is connected to the source electrode 43 of relevant thin film transistor (TFT) 14, and is electrically connected with transparent pixel electrode 81.Transparent pixel electrode 81 is surrounded by relevant reflecting electrode 31, the periphery maintenance of transparent pixel electrode 81 and contacting in interior week of reflecting electrode 31.Thereby, the conductive strips 12 that are used for data-signal by thin film transistor (TFT) 14, be that drain electrode 42, active layer 44 and source electrode 43 can be electrically connected to reflection/transparent pixel electrode 31/81, and represent the data message of the image that a part produces to be written to reflection/transparent pixel electrode 31/81.
Below with reference to Figure 10 A-10K and Fig. 7 A-7E the process of making LCD panel is described.Figure 10 A-10K represents along the sectional view of B-B line among Fig. 9.The job sequence of the 3rd embodiment and first embodiment's is similar, except that the step that is used to form transparent pixel electrode 81.The job sequence of carrying out in the 3rd embodiment comprises step: (1) makes metal layer pattern, form gate electrode 41, metal level 61 and conductive strips 11/13, (2) non-impurity-doped/n+ amorphous silicon layer pattern of on gate insulation layer 53, making, form active layer 44, (3) make metal layer pattern, form conductive strips 12 and source/drain electrode 43/42, (4) on passivation layer 54, make insulating layer pattern, (5) cover former projection with another insulation course, (6) form source contact hole 45 in passivation layer 54, (7) make the electrically conducting transparent layer pattern, form port connection electrode 63 and transparent pixel electrode 81, (8) make the reflective metals layer pattern, form reflecting electrode 31.
Preparation transparent insulation substrate 10a, and make the chromium layer pattern to form gate electrode 41, be used for the conductive strips 11 of sweep signal and be used for the conductive strips 13 of common electric voltage, shown in Figure 10 A.Gate electrode 41 and conductive strips 11/13 are covered by gate insulator 53, and unadulterated amorphous silicon layer 44a and heavily doped n type amorphous silicon layer 44b are deposited on the gate insulator 53.Make non-impurity-doped/n+ amorphous silicon layer 44a/44b pattern, form active layer 44, shown in Figure 10 B.Chromium be deposited on the whole surface of resulting structures and to the pattern-making of chromium layer to form leakage/source electrode 42/43 and conductive strips 12.Two ends of each active layer 44 are covered by source electrode and drain electrode 43 and 42, utilize leakage/source electrode 42/43 partly to etch away n as etching mask
+Amorphous silicon layer 44b.On transparent insulation substrate 10a, form the array of thin film transistor (TFT) 14 thus.Thin film transistor (TFT) 14 arrays are passivated layer 54 and cover.But source electrode contact hole 45 is not formed in the passivation layer 54.Therefore, this process is similar to first embodiment, up to form source electrode contact hole 45 in passivation layer 54.
Etching grid insulation course 53 and/or passivation layer 54 selectively, thus source electrode contact hole 55 and port contact hole 62 (seeing Figure 10 H and 7D) formed, and source electrode 43 and metal level 61 are exposed to source electrode contact hole 55 and port contact hole 62.Contact hole is formed in gate insulator 53 and the passivation layer 54 simultaneously, the end of conductive strips 13, is used for the metal level 61 of port one 6 and is exposed to contact hole respectively near the end of the conductive strips 12 of port one 2.
Subsequently, utilize the tin indium oxide that sputters at deposition 40nm-100nm on the resulting structures.Make the tin indium oxide pattern, form the interconnection between transparent pixel electrode 81, the connection electrode 63 that is used for port one 5/16/18, public connecting band 17 and port one 6 and the conductive strips 12.The growth of tin indium oxide is similar to the growth of the reflecting material of reflecting electrode 31, thereby has avoided the permeation of transparent pixel electrode 81.Because from contact hole 55, remove indium tin oxide layer, so source electrode 43 still is exposed to source electrode contact hole 55.The structure of gained is shown in Figure 10 I and 7E.
Subsequently, utilize the whole surface sputter at resulting structures to deposit 50nm-200nm and thick molybdenum and the aluminium neodymium of 100nm-300nm in succession, and make molybdenum layer and aluminium neodymium layer pattern to form reflecting electrode 31, shown in Figure 10 J.That is, from along the narrow zone of conductive strips 11 and 12 with from the neighboring area that is assigned to port, remove molybdenum layer and aluminium neodymium layer.Thus, reflecting electrode 31 is electrically insulated from each other.Reflecting electrode 31 keeps contacting with the source electrode 43 of relevant thin film transistor (TFT) 14 by source electrode contact hole 55 respectively.The interior week maintenance of each reflecting electrode 31 contacts with the periphery of relevant transparent pixel electrode 81.Molybdenum layer is inserted between pixel capacitors 81 and the aluminium neodymium layer, and stays the photoresist etching mask outer the placing of transparent pixel electrode 81.Though utilize etchant to make aluminium neodymium layer and molybdenum layer, the photoresist etching mask does not allow etchant to penetrate gap between transparent pixel electrode 81 and the molybdenum layer.Between transparent pixel electrode 81 and aluminium neodymium layer, produce any battery.Transparent pixel electrode 81 can not be damaged, and will not come off from insulation course 52.
On the exposed surface of reflecting electrode 31 arrays and insulation course 52, form oriented layer 34, and finish underlying structure 10.Prepare another underlying structure 20 dividually with underlying structure 10.Underlying structure 10 is alignd with another underlying structure 20, shown in Figure 10 K, and in the gap of sealing liquid crystal between underlying structure 10 and 20.
Under the condition identical, carry out sputter, and on the upper surface of reflecting electrode 31, realize level and smooth configuration of surface with first embodiment.The roughness of upper surface is represented by the average headway that is equal to or less than 1 micron.Reflectivity to the light component of 200nm-400nm wavelength is equal to or greater than visible light composition reflectivity 90%.Therefore, reflecting electrode 31 has resisted the jaundice that becomes image plane effectively.
The 4th embodiment
Referring to Figure 11, another LCD panel of the invention process comprises two underlying structure 10A and 20A, and a sealant 23 is filled in spherical spacers 35 and liquid crystal LC3 between underlying structure 10 and the 20A.Pecked line A-A, B-B and C-C represent respectively and the corresponding cross-sectional view of being got along pecked line C-C among pecked line B-B and Fig. 4 among pecked line A-A, Fig. 5 among Fig. 4 of cross-sectional view.
Underlying structure 10 is similar to the situation of first embodiment.But other underlying structure 20 is different from first embodiment.Between colored filter 21 and counter electrode 33, insert irregular reflection sheet 92.Therefore, interlayer insulating film 31A is not coarse, and directly goes up at passivation layer 54 ' and make reflecting electrode 31.
The LCD panel of implementing among the 4th embodiment is by the follow procedure manufacturing.This manufacture process comprises step: (1) makes metal layer pattern to form conductive strips 11/13 and gate electrode 41, and (2) make not doping/n on gate insulator 53
+Amorphous silicon layer is to form active layer 44, (3) make metal layer pattern, form leakage/source electrode 42/43 and conductive strips 12, (4) cover leakage/source electrode 42/43 and conductive strips 12 with passivation layer 54, (5) make the electrically conducting transparent layer pattern, form port connection electrode 63 and (6) and make metal layer pattern, form reflecting electrode 31.Therefore, the manufacture method of carrying out among the 4th embodiment does not comprise that first embodiment makes step (6) and (7) in the method for LCD panel.
In this program, passivation layer 54 ' not spread on thin film transistor (TFT) 14 arrays.Passivation layer 54 ' is formed by silicon nitride, and silicon nitride utilizes the auxiliary chemical vapour deposition technique deposition of plasma.When going up formation source/drain contact hole at the passivation layer 54 ' that is being similar to Fig. 6 D and 7D, resulting structures is sent to heating chamber, and holds it in room temperature or be heated to 170 ℃ or lower.Afterwards, resulting structures is transported to sputtering chamber.Sputtering chamber both can be identical with heating chamber, also can be different.In sputtering chamber, molybdenum and aluminium neodymium deposit on the resulting structures in succession.This is because the permeation of passivation layer 54 ' is this very important fact.The reflectivity that aluminium neodymium layer is wrinkle resistant and demonstration is very high.Preferably passivation layer 54 ' is thicker than passivation layer 54.The thickness range of passivation layer 54 ' is 300nm-800nm.If thin film transistor (TFT) 14 arrays are passivated layer 54 and cover, then this passivation layer of spread and baking on thin film transistor (TFT) 14 arrays replaces passivation layer 54 '.Only delete the step that forms former projection from program, it is similar with the step and the method step among first embodiment that form reflecting electrode 31 to make the metal/alloy layer pattern.Therefore, reflecting electrode 31 is still needed to eliminate the influence of permeation and preferably influences very little.
But reflecting electrode 31 forms under the condition identical with first embodiment.The neodymium content of aluminium neodymium alloy is weight ratio 0.5%-10%, and the aluminium neodymium alloy is equal to or less than 170 ℃ of growths down in base reservoir temperature.On the upper surface of reflecting electrode 31, produce average headway and be equal to or less than 1 micron configuration of surface.As a result, the reflectivity of the light component of 31 pairs of 200nm-400nm wavelength of reflecting electrode is equal to or greater than the reflectivity 90% to visible light, and has avoided separating out unusually in the baking procedure that forms oriented layer 34.Therefore, reflecting electrode 31 can not make into the image plane jaundice, and what the material that no matter is used for oriented layer 34 is.And the contact resistance between source electrode 43 and the reflecting electrode 31 can not increase yet, and makes to guarantee that data message can be written in the pixel.
On the other hand, another underlying structure 20A comprises random scatters sheet 91, and manufacture method is different from the described situation of first embodiment.The novolak resin that irregular reflection sheet 91 is scattered by graininess forms.For example, this particle is the bead that is formed by synthetic resin, is dispersed in the novolak resin.Optimize the size and the blending ratio of bead, make irregular reflection sheet 91 reach the light scattering characteristic identical with being formed with protruding reflecting electrode 31.LCD panel of the present invention reaches very high reflectivity, does not become the jaundice of image plane and data message to write less than the medium situation of pixel.
The reason of restriction
The present invention designs following best surface form and sputtering condition.At first, the present inventor on substrate of glass with different base reservoir temperature value sputtered aluminum neodymium alloys.The aluminium neodymium alloy comprises the neodymium of weight ratio 4.5%.The present inventor observes configuration of surface by the scanning electron beam microscope with 15000 magnification ratio, and with certain angle of inclination the configuration of surface of sample is taken.The present inventor measures the average headway of roughness, and average headway plots the curve among Figure 12.The present inventor finds, when base reservoir temperature reduces, coarsely becomes level and smooth.When base reservoir temperature was 200 ℃ Celsius, average headway was 1.5 microns.Base reservoir temperature drops to 150 ℃ Celsius, and then average headway is 0.9 micron.When being equal to or less than in base reservoir temperature under the temperature Celsius 100 ℃ when carrying out sputter, average headway is equal to or less than 0.5 micron.The coarse degree of depth reduces with base reservoir temperature.When base reservoir temperature was 200 ℃ Celsius, the order of magnitude of the degree of depth was 0.5 micron.Base reservoir temperature drops to 150 ℃ Celsius, and then the degree of depth is reduced to about 0.3 micron.During sputter, the degree of depth is reduced to the 0.2-0.1 micron when being equal to or less than 100 ℃ Celsius in base reservoir temperature.
Subsequently, the present inventor measures the reflectivity of aluminium neodymium layer to light component.With respect to the reflectivity of aluminium lamination to this reflectivity normalization.In other words, the reflectivity on the aluminium lamination is depicted as 100%.Relative reflectance is plotted in the curve among Figure 13.
When at 200 ℃ of following sputtered aluminum neodymium alloys Celsius, average headway is 1.5 microns a magnitude (seeing Figure 12), and the peak value of relative reflectance is at the about wavelength place of 400nm, and relative reflectance reduces in the both sides of peak value.On the other hand, when sputter under temperature Celsius 120 ℃, average headway is 0.7 micron, and the relative reflectance of the light of the following wavelength of 400nm is not reduced.The relative reflectance of aluminium neodymium alloy and average headway are that the relative reflectance of 1.5 microns aluminium neodymium alloy presents same trend.Yet, even be reduced to when being shorter than 400nm when wavelength, average headway is that the relative reflectance of 0.7 micron aluminium neodymium alloy increases.The present inventor confirms, average headway is equal to or less than 1.0 microns aluminium neodymium alloy and does not reduce relative reflectance to the light that is equal to or less than the 400nm wavelength.The present inventor sums up: average headway is equal to or less than the jaundice that 1.0 microns configuration of surface resists into image plane effectively.
Subsequently, the present inventor has studied the influence of thickness to reflectivity.The present inventor is splashed to all thickness with the aluminium neodymium alloy under different base reservoir temperature values.The present inventor records the reflectivity of aluminium neodymium alloy layer, and the reflectivity of representing with respect to 120 ℃ of lower curves Celsius among Figure 13 is to the normalization of this reflectivity.In other words, the reflectivity at the aluminium neodymium alloy layer of 120 ℃ of sputters is depicted as 100%.Normalization reflectivity on the thick aluminium neodymium alloy layer of 150nm or relative reflectance are depicted as the curve among Figure 14.Similarly, the relative reflectance on the thick aluminium neodymium layer of 300nm is depicted as the curve of Figure 15.In Figure 14 and 15, " RT " representative " room temperature ".
Relatively curve and the curve among Figure 15 among Figure 14 can be known, the relative reflectance to the ultraviolet light composition when the thickness of aluminium neodymium alloy layer increases reduces.For example, the relative reflectance that demonstrates at the aluminium neodymium alloy layer of 100 ℃ of sputters still increases to the reflectivity of ultraviolet light when 150nm is thick.But, when thickness increases to 300nm,, promptly, identical relative reflectance is arranged at the aluminium neodymium alloy layer of 120 ℃ of deposit in the aluminium neodymium alloy layer demonstration of 100 ℃ of sputters and with reference to sample.At the aluminium neodymium alloy layer of 200 ℃ of following sputters the ultraviolet light composition is demonstrated bad reflectivity, no matter thickness how.
Subsequently, inventor's research is used for the transmissivity of the organic compound of oriented layer 34 to light component.Oriented layer " A " is made by Nissan Chemical Corporation ltd., and oriented layer " B " is made by JSR.The composition difference of two oriented layer.Though two oriented layer " A " and " B " comprise polyimide, the two composition difference.The transmissivity that the organic compound of oriented layer " A " demonstrates is in 97%～99% scope.And the transmissivity that the organic compound of oriented layer " B " demonstrates reduces gradually with wavelength.When oriented layer " B " when being used in LCD panel, is become the image plane flavescence.But reflecting electrode according to the present invention is used for LCD panel, has avoided the flavescence of one-tenth image plane.
The present inventor has also studied neodymium content to separating out the influence with reflectivity unusually.Present inventor's sputter on the different aluminium neodymium alloy of neodymium content, and under 230 ℃, aluminium neodymium alloy layer is carried out 1 hour processing.The baking procedure of heat treated condition and oriented layer 34 is similar.After the thermal treatment, whether the present inventor checks to have unusually on aluminium neodymium alloy layer and separates out by observation by light microscope aluminium neodymium alloy layer.In Figure 17, provide summary.When neodymium content less than weight ratio 0.5%, promptly 0.1% o'clock, observes unusually and separate out, and identified as samples is with " * ".Be in the sample of weight ratio between 0.1%-5%, it is the same big with the aluminum layer of room temperature deposit to demonstrate reflectivity, and is marked with " zero ".The reflectivity of the light component of 400nm wavelength on the sample of weight ratio 10% drops to 6-8%, and identified as samples is with " △ ".But the reflectivity of the light component of 400nm wavelength on the sample of weight ratio 20% reduces to surpass 10%, and identified as samples is with " * ".Thereby the present inventor sums up: neodymium content is in the scope of weight ratio 0.5%-10%.
At last, the present invention assesses sample from three aspects, color, reflectivity and source electrode 43 on the image plane and the contact resistance between the reflecting electrode 31.Summary result in Figure 18.Sample is respectively the aluminium neodymium alloy of aluminium neodymium layer that forms on organic compound layer and the neodymium that comprises weight 4.5%.Aluminium neodymium alloy layer is oriented film " B " cover.But, at different base reservoir temperature deposit aluminium neodymium layers.Become the image plane jaundice in the aluminium neodymium layer sample of 200 ℃ of depositions, identified as samples is with " * ".Reflectivity to the light component of 400nm wavelength in the sample of the aluminium neodymium layer of 170 ℃ and 200 ℃ depositions is reduced to 1-5%.Reason for this reason, identified as samples is with " △ ".Though the aluminium neodymium layer 20 ℃ of depositions demonstrates the goo reflectivity on substrate of glass, because the permeation of organic compound layer, the crumple of aluminium neodymium layer, and the reflectivity of the light component of 400nm wavelength dropped to 5%.Reason for this reason, identified as samples is with " △ ".As long as base reservoir temperature is equal to or greater than 70 ℃, sample just demonstrates lower contact resistance.But,, increase owing to permeation makes constant (constant) resistance when at room temperature, promptly during 20 ℃ of deposit aluminium neodymium alloys.For this reason, identified as samples is with " * ".The present inventor sums up: be equal to or less than in base reservoir temperature and utilize sputter that the aluminium neodymium is deposited on the insulation course under 170 ℃, wherein insulation course for example is a silicon nitride, grows by plasma-assisted chemical vapour deposition.On the other hand, when insulation course forms and toasts by the resin spread, utilize to sputter at 70 ℃～170 base reservoir temperature deposit aluminium neodymium alloy.
The present inventor has also studied other sample, and these samples have the reflecting electrode 31 that is formed greater than the material of aluminium by reflectivity.These examples of substances have silver or silver alloy.Sample demonstrates with the similar reflectivity of aluminium neodymium alloy, resists the characteristic and the contact resistance of separating out unusually.
Even oriented layer is formed by organic compound, these compound exhibits go out the identical wavelength dependence of organic compound with oriented layer " B ", but reflecting electrode according to the present invention has been avoided one-tenth image plane jaundice, has realized high reflectance, and maintenance and source electrode low contact resistance contact.Reflecting electrode according to the present invention has the configuration of surface of being represented by the average headway that is equal to or less than 1 micron.Preferably average headway is equal to or less than 0.6 micron.Best reflecting electrode 31 also demonstrates the luminance factor of the light component of 200nm-400nm wavelength big to the reflectivity 95% (seeing Figure 14 and 15) of visible light.In other words, need have the mode control procedure parameter of above-mentioned configuration of surface and reflectivity with reflecting electrode.
The neodymium that best aluminium neodymium comprises is within 0.5%～10% weight range.Also preferably neodymium content is within 0.5%～5% weight range, because aluminium neodymium layer demonstrates very big reflectivity, does not separate out (seeing Figure 17) unusually.Unusually it is undesirable separating out, because friction roller can be contaminated.
If oriented layer 34 is formed by a kind of like this organic compound, promptly this compound is equal to or greater than 95% to the transmissivity of the light component of 300nm-600nm wavelength, for example is oriented layer " A " (seeing Figure 16), then becomes image plane to be not easy to jaundice.
Though illustrated and described specific embodiments of the invention, it will be apparent to those skilled in the art, can under the prerequisite of essence of the present invention and scope that do not come off, do various variations and remodeling.
For example, can be with another kind of transistor, as the alternative reverse notch cuttype passage etch thin film transistor 14 of ditch pipe protection (channel-protected) thin film transistor (TFT), non-return notch cuttype thin film transistor (TFT) or coplanar type thin film transistor (TFT).
In addition, thin film transistor (TFT) can use MIM (metal-insulator-metal type) diode to substitute.Transparent insulation substrate 10a/20a can be formed by plastics, pottery or semiconductor.But the semiconductor-based end, can not be used for the reflective-transmissive LCD panel.
The present invention can be applied to STN (STN Super TN phase) LCD panel.The step that is formed for the reflecting electrode among the 4th embodiment can be used to make reflection type liquid crystal display or reflective-transmissive LCD panel.These LCD panel can have the substrate of glass that has the rough surface of transferring to reflecting electrode.
Claims (23)
1. LCD panel comprises:
Suprabasil conductive strips;
The switching transistor that links to each other with described conductive strips; With
The reflecting electrode that links to each other with described switching transistor,
It is characterized in that
The average headway of the unevenness on the surface of described reflecting electrode is to be equal to or less than 1 micron.
2. LCD panel as claimed in claim 1 is characterized in that reflecting electrode is formed by the reflecting material of reflectivity greater than aluminium.
3. LCD panel as claimed in claim 2 is characterized in that described reflecting material is one that chooses from the group that comprises aluminium neodymium alloy, silver and silver alloy.
4. LCD panel as claimed in claim 2 is characterized in that reflecting material is the aluminium neodymium alloy.
5. LCD panel comprises:
Suprabasil conductive strips;
The switching transistor that links to each other with described conductive strips; With
The reflecting electrode that links to each other with described switching transistor,
It is characterized in that
Described reflecting electrode is for the light reflectivity 90% with 400 nano wave lengths for the reflection of light rate of wavelength region may between 200 nanometers and 400 nanometers at least.
6. LCD panel as claimed in claim 4, the weight ratio that it is characterized in that the neodymium that the aluminium neodymium alloy comprises is between 0.5%-10%.
7. as claim 1 or 5 described LCD panel, it is characterized in that described switching transistor comprises a plurality of switching transistors (14), each control knot (41) of this switching transistor (14) optionally is connected to sweep trace (11), each data input knots (42) optionally are connected to data line (12), and each data output knots (43) are connected respectively to the reflecting electrode that serves as pixel capacitors.
8. LCD panel as claimed in claim 7 is characterized in that also comprising the colored filter (21) that aligns with pixel capacitors (31) and counter electrode (33) respectively, makes to produce described internal field between pixel capacitors (13) and counter electrode (33).
9. LCD panel as claimed in claim 7 is characterized in that described reflecting electrode is formed by the reflecting material of reflectivity greater than aluminium.
10. LCD panel as claimed in claim 9, it is characterized in that described reflecting material be from the group that comprises aluminium neodymium alloy, silver and silver alloy, choose one of.
11. LCD panel as claimed in claim 9 is characterized in that reflecting material is the aluminium neodymium alloy.
12. LCD panel as claimed in claim 11, the weight ratio that it is characterized in that the neodymium that the aluminium neodymium alloy comprises is between 0.5%～10%.
13. LCD panel as claimed in claim 7 is characterized in that described substrate also comprises the transparent pixel electrode (81) that is electrically connected to reflecting electrode respectively.
14. LCD panel as claimed in claim 13 is characterized in that each transparent pixel electrode (81) has a periphery that is electrically connected to one of the corresponding inside circumference part of reflecting electrode.
15. LCD panel as claimed in claim 13 is characterized in that reflecting electrode is formed by the reflecting material of reflectivity greater than aluminium.
16. LCD panel as claimed in claim 15, it is characterized in that described reflecting material be from the group that comprises aluminium neodymium alloy, silver and silver alloy, choose one of.
17. LCD panel as claimed in claim 15 is characterized in that reflecting material is the aluminium neodymium alloy.
18. LCD panel as claimed in claim 17, the weight ratio that it is characterized in that the neodymium that the aluminium neodymium alloy comprises is between 0.5%-10%.
19. a method of making LCD panel comprises step:
Make suprabasil conductive strips;
Switching transistor is linked to each other with described conductive strips; With
Reflecting electrode is linked to each other with described switching transistor;
It is characterized in that
Be equal to or less than the described reflecting electrode of formation under the temperature Celsius 170 ℃.
20. the method for manufacturing LCD panel as claimed in claim 19 is characterized in that under the temperature between 70 ℃ and 170 ℃, described reflecting electrode is formed on to utilize apply on the interlayer dielectric film that forms.
21. the method for manufacturing LCD panel as claimed in claim 20 is characterized in that the described substrate of heating before forming described reflecting electrode at least.
22. the method for manufacturing LCD panel as claimed in claim 19 is characterized in that forming described reflecting electrode by the high reflecting material of choosing from the group that comprises aluminium neodymium alloy, silver and silver alloy.
23. a LCD panel comprises:
Suprabasil conductive strips;
The switching transistor that links to each other with described conductive strips;
The reflecting electrode that links to each other with described switching transistor; With
Be formed on the oriented layer on the described reflecting electrode,
It is characterized in that
Described oriented layer has to the light of wavelength region may between 600 nanometers 300 nanometers and is equal to or greater than 95% transmissivity.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002030472A JP3908552B2 (en) | 2001-03-29 | 2002-02-07 | Liquid crystal display device and manufacturing method thereof |
| JP200230472 | 2002-02-07 |
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| CN1437055A CN1437055A (en) | 2003-08-20 |
| CN1270208C true CN1270208C (en) | 2006-08-16 |
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| JP2008299312A (en) * | 2007-05-01 | 2008-12-11 | Epson Imaging Devices Corp | Liquid crystal display device and electronic equipment |
| RU2011132924A (en) * | 2009-05-18 | 2013-06-27 | Шарп Кабушики Каиша | SUBSTANCE OF ACTIVE MATRIX AND LIQUID CRYSTAL DISPLAY DEVICE USING THE SPECIFIED SUBSTRATE |
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