CN1265500C

CN1265500C - ASK modulator for NRD guide

Info

Publication number: CN1265500C
Application number: CNB028049594A
Authority: CN
Inventors: 申千雨
Original assignee: NRD TECHNOLOGY Co Ltd
Current assignee: NRD TECHNOLOGY Co Ltd
Priority date: 2001-02-20
Filing date: 2002-01-29
Publication date: 2006-07-19
Anticipated expiration: 2022-01-29
Also published as: WO2002067364A1; CN1491452A; KR20010044421A; KR100358981B1

Abstract

The present invention relates to an ASK modulator using an NRD gude. According to the present invention, by installing a diode mount which is equipped with the Schottky Barrier Diode on the end of the NRD gude, the modulation is made possible through the repeated variation of the reflected output depending on the degree of absorption against the incident oscillated wave coming through the NRD. In addition, the present invention makes it possible to accomplish the ASK modulation with the excellent absorption/reflection ratios because of the air gap inserted between the end of the NRD guide and the diode mount, which enhances the VSWR characteristic.

Description

A kind of ASK modulator that is used for the NRD waveguide

Technical field

The present invention relates to a kind of millimeter wave ASK (amplitude shift keying) modulator that in the millimeter wave section, uses NRD (nonradiative dielectric waveguide) waveguide and Schottky diode.

Background technology

In order to increase the quantity that wireless communication apparatus transmits data, be necessary to adopt high frequency, so that lot of data is transmitted at short notice.Yet if adopt high frequency, wavelength will shorten so, just the data degradation when occurring transmitting easily.Under the common situation, can be with MMIC (MonolithicMicrowave Integrated Circuit) method as a kind of technology of beyond the microwave band scope, handling frequency.But this method has a shortcoming, owing under the 50GHZ frequency, there is the transmission loss of per 1 meter 60dB, so, in correlative technology field, be difficult to the high frequency construction circuit of this technology of employing.

In correlation technique, may be by inserting Schottky diode at NRD waveguide terminal part, the output of the millimeter wave by accommodation reflex repeats absorption process and reflection process and obtains ASK and regulate.But,, make the receiving sensitivity of receiver because the decay of signal or noisy and quality is not good because the difference between the millimeter wave output of the millimeter wave that absorbs output and reflection is very little.

Summary of the invention

The invention provides a kind of method that in the 60GHz scope, improves regulating characteristics, it is achieved through the following technical solutions, at NRD waveguide terminal part be equipped with and set an air gap of presetting between the diode pedestal of Schottky diode, to improve the receiving sensitivity of receiver under signal attenuation or noisy mode.The present invention is adapted at 60Ghz most and uses down, also goes in other frequency ranges.

Among the present invention, by the end portion of device in the NRD waveguide, expression can improve the frequency modulation ratio of millimeter wave with a certain air gap for preceding special teflon, high-k thin slice, the special teflon of diode pedestal and back.

That is to say that frequency modulation ratio and available frequencies scope can be regulated according to the thickness of the width of air gap, preceding special teflon and the thickness of high-k thin slice.

Among the present invention, also can not have the air gap between NRD waveguide and diode, the characteristic of reflection coefficient is not as there being the air gap.Yet, the quality of regulation that does not have the air gap to obtain by wideer wave band.

Description of drawings

Below in conjunction with drawings and Examples the present invention is further described:

Fig. 1 is the perspective view of the millimeter wave ASK modulator of the use NRD waveguide among the optimum embodiment of the present invention;

Fig. 2 is the vertical view of the ASK modulator of no upper strata conductive plate;

Fig. 3 is the end view of ASK modulator;

Fig. 4 is the perspective view that is provided with the diode pedestal of Schottky diode;

Fig. 5 is among the optimum embodiment of the present invention, when the air gap is 1mm, and the reflection loss table with test results when preceding special teflon (Teflon) 4 be 1.5mm, it depends on the thickness of the high-k thin slice 5 of insertion diode pedestal front portion;

Fig. 6 is among the optimum embodiment of the present invention, when the air gap is 0.5mm, and the reflection loss table with test results when preceding special teflon (Teflon) 4 be 1.5mm, it depends on the thickness of the high-k thin slice 5 of insertion diode pedestal front portion;

Fig. 7 is among the optimum embodiment of the present invention, and when the air gap is 0.5mm, the reflection loss when preceding special teflon (Teflon) 4 be 0.18mm is table as a result, and it depends on the thickness of the high-k thin slice 5 of insertion diode pedestal front portion;

Fig. 8 is among the optimum embodiment of the present invention, and when the air gap is 0.5mm, the frequency change when preceding special teflon (Teflon) 4 be 105mm is table as a result, and it depends on the thickness of the high-k thin slice 5 of insertion diode pedestal front portion;

Fig. 9 is among the optimum embodiment of the present invention, and when the air gap is 0.5mm, the frequency change when preceding special teflon (T9flon) 4 be 0.18mm is table as a result, and it depends on the thickness of the high-k thin slice 5 of insertion diode pedestal front portion;

Figure 10 is the perspective view of the ASK modulator of the no air gap of use NRD waveguide in the second embodiment of the invention;

Figure 11 is the vertical view of the ASK modulator of no air gap, no upper strata conductive plate;

Figure 12 is the end view of the ASK modulator of no air gap;

Figure 13 is and the corresponding output of absorption/reflection change list that it depends on the thickness of high-k thin slice.

Chart vitals code description

1 is the upper strata conductive plate

2 is lower floor's conductive plate

3,16 is the NRD waveguide

4 is preceding special teflon

5,19 is the high-k thin slice

6,17 is diode pedestal

7,18 is the special teflon in back

8,15 is the bias voltage cable

9 is incident wave

10 is reflected wave

11 is ripple (incident in the air gap and reflected wave)

12 is metal (copper) film

13 is dielectric substrate

14 are Schottky barrier diode (being called Schottky diode among the present invention)

Embodiment

The optimum embodiment of the present invention comprises (by number order): the NRD waveguide 3 as the ripple passage; Air gap between guider 3 and preceding special teflon 4; Preceding special teflon 4; A high-k thin slice 5; A diode pedestal 6; With the special teflon 7 in back.

In optimum embodiment, the parameter of control ASK modulator frequency output and reflection output difference is air gap, preceding special teflon 4, the special teflon 7 of high-k thin slice 5 and back.These parameters just can obtain the present invention and expect frequency that obtains and the difference that reflects output after suitably adjusting.

Second embodiment of the invention comprises: do not have the air gap between diode pedestal 17 and the ripple passage NRD waveguide 16, by insert the high-k thin slice as and the impedance that is complementary of NRD waveguide and implement by inserting the special teflon 18 in back.

Most preferred embodiment

Gap among the present invention between ASK modulator upper strata conductive plate 1 and the lower floor's conductive plate 2 is 2.25mm, because according to the principle of NRD waveguide, the gap between the levels conductive plate must be less than half-wavelength.The width of NRD waveguide is 2.5mm.

As shown in Figure 4, Schottky diode 14 is on the metallic film of chokes shape at dielectric substrate 13 lastblocks by device, and the thickness of dielectric substrate is 0.3mm, and high-k is 2.6.Metallic film 12 parts of device Schottky diode can be counted as being made up of two antennas.When Schottky diode 14 deflection forward, two antennas are connected, and are absorbed into ejected wave.On the contrary, when Schottky diode 14 to post deflection, two antennas are separated, and are reflected into ejected wave.That is to say that if Schottky diode 14 deflection forward, the incident wave that enters diode pedestal 6 is absorbed, when Schottky diode 14 to post deflection, the incident wave that enters diode pedestal 6 is reflected.

In the ASK adjustment process, the output of the millimeter wave of incident and the output that is reflected immediately can absorb angle by control and regulate.In not having the correlation technique of air gap, when using NRD waveguide carrying out ASK to regulate, the difference of reflection output is very faint.The present invention has then comprised the air gap, has used preceding special teflon 4 and high-k thin slice 5 simultaneously.

As shown in Figure 5, when Schottky diode deflection forward or backward, reflection loss depends on the thickness of high-k thin slice.In this case, the width of air gap is 1mm, and the length of forward and backward special teflon is 1.5mm.When the thickness of high-k thin slice 5 was 0.12mm, the difference of reflection output had 30dB at least.For instance, when incident wave is output as 1W, the antenna on the diode pedestal 6 of device Schottky diode 14, under Schottky diode zero deflection situation, reflection 500mW is wherein weakened 30dB by incident wave.As a comparison, when Schottky diode 14 forward during deflection, incident wave is absorbed, and reflection output becomes 1mW.

As shown in Figure 6, the width when the air gap is 0.5mm, and when all the other situations were identical with Fig. 5, reflection loss depended on the thickness of high-k thin slice.By comparison diagram 5 and Fig. 6, can find that when the air gap was 0.5mm, the influence of high-k thin slice was less than when the air gap is 1mm.

As shown in Figure 7, when the high-k sheet thickness is 0.18mm, air gap width is 0.5mm, when the special teflon thickness in back is 1.5mm, and the thickness of special teflon before reflection loss depends on.The maximum output of reflected wave difference depends on the deflection of applied Schottky diode, and when current special teflon thickness was 1.3mm, maximum difference was approximately 32dB.

Fig. 8 and Fig. 9 have represented how to select the available frequencies scope corresponding to the thickness of high-k thin slice 5 and preceding special teflon 4.As shown in Figure 8, the thickness of high-k thin slice 5 is depended in the variation of frequency; As shown in Figure 9, the thickness of special teflon 4 before the variation of frequency is depended on.

Embodiment 2

Figure 10, Figure 11 and Figure 12 are respectively perspective view, vertical view and the sectional views of ASK modulator in the second embodiment of the invention, in second embodiment, do not have the air gap in the technical characterictic.Vertical view Figure 11 and sectional view Figure 12 have comprised the schematic diagram of incident wave and reflected wave.

Figure 13 represents the variation according to the caused output of ON/OFF of deflection, and the ON/OFF of deflection is corresponding at NRD waveguide 16 and the diode pedestal thickness of the high-k thin slice 19 of 17 insertions again, 17 hindrance functions that are complementary of diode pedestal.The difference that absorbs and reflect is big more, and the regulation rates of acquisition is good more.

Claims

1. NRD waveguide of using millimeter wave ASK modulator, therein, as being provided with the air gap between the NRD waveguide of ripple passage and the preceding special teflon, adjacent with the air gap, special teflon, high-k thin slice, the special teflon of diode pedestal and back are regulated to carry out millimeter wave by the NRD waveguide before being disposed with; It is characterized in that, regulate in order to use the NRD waveguide to carry out millimeter wave, therein, insert the special teflon in back, and form the impedance of mating the NRD waveguide by eliminating as air gap between the NRD waveguide of ripple passage and the diode pedestal and only inserting a high-k thin slice.

2. the NRD waveguide of use millimeter wave ASK modulator according to claim 1 is characterized in that, in order to obtain required difference between frequency and the reflection output, can realize by the size of special teflon after controlling and the thickness of high-k thin slice; The size of the special teflon in described back and the thickness of high-k thin slice are the parameters of regulating difference between ASK modulator frequency and the reflection output.