CN1263063C - 一种可用于平面显示的场致发射纳米材料 - Google Patents

一种可用于平面显示的场致发射纳米材料 Download PDF

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CN1263063C
CN1263063C CN 03116285 CN03116285A CN1263063C CN 1263063 C CN1263063 C CN 1263063C CN 03116285 CN03116285 CN 03116285 CN 03116285 A CN03116285 A CN 03116285A CN 1263063 C CN1263063 C CN 1263063C
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field emission
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nano wire
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CN1450580A (zh
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陈国荣
莫晓亮
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Fudan University
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    • B82—NANOTECHNOLOGY
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    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/007—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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    • C30B29/54—Organic compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30469—Carbon nanotubes (CNTs)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2209/00—Apparatus and processes for manufacture of discharge tubes
    • H01J2209/02—Manufacture of cathodes
    • H01J2209/022—Cold cathodes
    • H01J2209/0223—Field emission cathodes

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Abstract

本发明涉及一种可用于平面显示的场致发射纳米材料，具体为Ag和TCNQ按1∶1化学计量比生成的Ag(TCNQ)纳米线。该材料可采用真空条件下的饱和蒸气反应法制备获得，生成的Ag(TCNQ)纳米线(晶须)基本上垂直于基板。为了降低场发射阈值，可在晶须上用常规真空镀膜法，再覆盖一层纳米厚度的金属或氟化锂薄层。

Description

一种可用于平面显示的场致发射纳米材料
技术领域
本发明属纳米材料技术领域，具体涉及一种可用于平面显示的场致发射材料。
背景技术
自从Ijima S发现纳米碳管以来，它的场发射特性受到广泛的关注，在平面显示方面的应用已趋成熟。但它在工艺上还存在一些难点，如生长温度高因而很难直接在玻璃等材料上生长等。
发明内容
本发明的目的在于提出一种具有场致发射特性的纳米材料，而其生长温度比较低，以克服目前一些纳米管线制备温度过高的缺点，并容易与其它工艺兼容。
Ag(TCNQ)是一种电荷转移型金属有机配合物，是一种广受关注的有机功能材料，它本身就有许多独特的光学、电学性质。用其制成的薄膜有些具有光致变色特性，可用于光存储；在其晶体的一个特定方向施加一定电场会呈现负阻特性，且高、低两种电阻状态的电阻率相差105～107数量级，即具有明显的开关效应。Ag(TCNQ)晶体具有准一维的导电特性，用它制成的纳米线可能成为一种“天然”的横向绝缘的纳米“导线”。
本发明经研究证明，Ag与TCNQ在特定的化学计量配比条件下生成的Ag(TCNQ)配合物纳米线具有场致发射特性。因而，可将其用于制备平面显示器件。
本发明提出的具有场致发射特性的纳米材料，是Ag和有机物TCNQ在1∶1化学计量配比的条件下生成的Ag(TCNQ)配合物纳米线。其显示场致发射特性的I-E曲线见图1所示。
上述Ag(TCNQ)金属有机配合物纳米线可采用真空条件下饱和蒸气反应法制备，具体过程如下：
①用常规方法(如真空蒸发或溅射法等)，在基板(如硅片、玻璃等)上制备一层5-30纳米厚的Ag薄膜；
②将上述Ag薄膜样品和有机材料TCNQ同时置于一容器中(如玻璃管等)；
③对上述容器抽真空，抽真空至10-3Pa量级后将容器密封，与真空系统分离；
④将上述的真空容器置于烘箱中加热，至55-150℃，维持20-30分钟，使基板上的金属Ag薄膜与TCNQ的饱和蒸气发生反应，最终在基板上生成化学计量比为1∶1的Ag(TCNQ)配合物纳米线。
为了降低场致发射的阈值，可用常规真空镀膜法在配合物纳米线Ag(TCNQ)上镀一层5-50纳米厚的金属或氟化锂(LiF)薄膜。
通过一系列的实验，本发明发现对于Ag(TCNQ)纳米线的生长来说，反应温度必须高于55℃。一般来说比较合适的温度在90-110℃左右，时间一般保持20-30分钟。图2为硅基板上20纳米厚的银膜在100℃条件下，制备成的Ag(TCNQ)纳米线在电子显微镜下的照片。可以看到Ag(TCNQ)纳米线以晶须形式基本上沿着垂直于基板平面的方向排列形成“森林”状。Ag(TCNQ)纳米线晶须的横截面近似呈方形，边长小于100纳米，长度(高度)为微米量级。
上述Ag(TCNQ)纳米线生长过程是在一个平衡的状态下进行，最后形成的Ag(TCNQ)纳米线(晶须)中银与TCNQ的配比严格为1∶1。生长温度低，条件相对容易控制，容易与其它工艺兼容。由于Ag(TCNQ)具有的优良的分子电子学性质，被认为是一种很有希望的制备分子电子器件的材料，尤其是其场发射特性的发现，可使其能用平面显示器件。
附图说明
图1为Ag(TCNQ)纳米线场致发射的I-E曲线图。
图2为Ag(TCNQ)纳米线(晶须)的扫描电子显微镜照片。
具体实施方式
采用真空条件下饱和蒸气反应法制备Ag(TCNQ)纳米线。
(1)先用真空蒸发方法，在硅基片上制备20纳米厚的Ag薄膜；
(2)把Ag薄膜样品和有机材料TCNQ同时置于玻璃管中；
(3)对玻璃管抽真空至2×10-3Pa，然后将玻璃管密封；
(4)将密封的玻璃管置于烘箱中，加热至100℃，保持20-30分钟，使基板上的Ag薄膜与TCNQ的饱和蒸气发生反应，按1∶1的化学计量比生成Ag(TCNQ)配合物纳米线，其扫描电子显微镜照片见如图2所示。
(5)再用真空蒸发法在上述薄膜上蒸镀一层20纳米厚的LiF，即得到可用于平面显示器的场致发射纳米材料。其场致发射的I-E曲线如图1所示。

Claims (3)

1、一种用于平面显示的场致发射纳米材料，其特征在于该场致发射纳米材料是由Ag和有机材料TCNQ在1∶1化学计量配比条件下生成的Ag(TCNQ)配合物纳米线。
2、一种用于平面显示的场致发射纳米材料的制备方法，其特征在于包括以下步骤：
①用常规的真空蒸发或溅射方法在基板上制备一层5-30纳米厚的Ag薄膜；
②将上述Ag薄膜样品和有机材料TCNQ同时置于一容器中；
③对上述容器抽真空，抽真空至10-3Pa量级后将容器密封，与真空系统分离；
④将上述的真空容器置于烘箱中加热，至55-150℃，维持20-30分钟，使基板上的金属Ag薄膜与TCNQ的饱和蒸气发生反应，最终在基板上生成化学计量比为1∶1的Ag(TCNQ)配合物纳米线。
3、根据权利要求2所述纳米材料的制备方法，其特征在于用真空镀膜法在Ag(TCNQ)配合物纳米线上镀一层5-50纳米的金属或LiF薄膜。
CN 03116285 2003-04-10 2003-04-10 一种可用于平面显示的场致发射纳米材料 Expired - Fee Related CN1263063C (zh)

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