CN1261918C - Driving circuit for display device - Google Patents
Driving circuit for display device Download PDFInfo
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- CN1261918C CN1261918C CNB021059594A CN02105959A CN1261918C CN 1261918 C CN1261918 C CN 1261918C CN B021059594 A CNB021059594 A CN B021059594A CN 02105959 A CN02105959 A CN 02105959A CN 1261918 C CN1261918 C CN 1261918C
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Abstract
The present invention provides a driving circuit of a display. The display is provided with a plurality of pixels, wherein each pixel is provided with a first transistor, a second transistor, a third transistor, a fourth transistor, a capacitor and a light emitting element. The way for driving the pixels by electric current can be completed through an n-shaped amorphous silicon thin film transistor, and a low-temperature polysilicon thin film transistor is not required. Besides, the ratio of the channel width to the channel length of the thin film transistors of the pixel can be adjusted to compensate different effects of the characteristics of the red (R) pixel, the green (G) pixel and the blue (B) pixel, and a driving integrated circuit is not required to be used for supplying different data current.
Description
Technical field
The present invention relates to a kind of image element circuit, and particularly about a kind of image element circuit of amorphous silicon film transistor.
Background technology
The human dynamic image that can see the earliest is the film of documentary film form.Afterwards, the invention of cathode-ray tube (CRT) (Cathode Ray Tube is called for short CRT) successfully derives business-like televisor, and becomes the electrical home appliances of each family's indispensability.Along with development of science and technology, the application of CRT expands to the desktop monitor in the computer industry again, and makes CRT scene many decades nearly.But the made all types of displays of CRT all face the problem of radiant rays, and because the structure of internal electron rifle, and make that display is bulky and take up space, so be unfavorable for thin typeization, lightweight and maximization.
Since above-mentioned problem, and make the researchist start to develop so-called flat-panel monitor (Flat Panel Display).This field comprises LCD (Liquid Crystal Display, abbreviation LCD), Field Emission Display (Field Emission Display, abbreviation FED), vacuum fluorescence nixie display (Vacuum Fluorescent Display, abbreviation VFD), organic LED (Organic Light Emitting Diode, be called for short OLED) and plasma display panel (Plasma Display Panel is called for short PDP).
Wherein, organic LED is called organism electroluminescent display (OrganicElectroluminescence Display) again, and it is the element of self-luminosity, and is the dot matrix type display.Because the characteristic of OLED is DC low-voltage driving, high brightness, high-level efficiency, high correlative value and frivolous, and its luminous color and luster is by red (Red, abbreviation R), green (Green, be called for short G) and blue (Blue, being called for short B) three primary colors are to white degree of freedom height, so OLED is called the development priority that next is a novel planar panel from generation to generation.The OLED technology is except having the frivolous and high resolving power of LCD concurrently, and the active illuminating of LED, response speed is fast with advantage such as power saving cold light source outside, multiple advantages such as the visual angle is wide in addition, color contrast is effective and cost is low.Therefore, and even OLED can be widely used in mobile phone, digital camera, the more large-area display of PDA(Personal Digital Assistant).
From the viewpoint of type of drive, OLED can be divided into passive-matrix (Passive Matrix) type of drive and active-matrix (Active Matrix) type of drive two big kinds.The advantage of passive matrix type OLED is that structure very simply and not needs to use thin film transistor (TFT) (Thin FilmTransistor, be called for short TFT) drive, thereby cost is lower, but its shortcoming is the application that is not suitable for the high resolving power image quality, and when large size panel develops, problem such as can produce that power consumption increases, component life reduces and display performance is not good.And the advantage of active-matrix formula OLED is except the demand that can be applicable to large-sized active matrix drive mode, and its visual angle is wide, high brightness and the fast characteristic of response speed also are very important, but its cost can be slightly higher than passive matrix type OLED.
For active-matrix formula OLED, its mode that drives pixel (Pixel) adopts the mode of current drives usually.Therefore the current drives mode of active-matrix formula OLED need mostly be to use p type TFT or p type TFT to add that n type TFT constitutes in conjunction with the production technology of low temperature polycrystalline silicon (Low Temperature Poli-Silicon is called for short LTPS) TFT usually at present.This is because low temperature polycrystalline silicon TFT has the characteristic of higher electronics and hole mobility, and therefore the and characteristic that the p element in channel is provided can produce than amorphous silicon (Amorphous Silicon, the big drive current of TFT of abbreviation α-Si).For amorphous silicon, the method for there is no is produced suitable p type channel TFT, thus the current drives mode of current pixel, and be not suitable for the use of α-Si TFT.Moreover, in present image element circuit, drive current mostly equates with data current, so for the different R of characteristic, G and three kinds of pixels of B, must utilize drive integrated circult (Integrated Circuit, be called for short IC) give different data currents, with compensation R, G and three kinds of different effects of pixel characteristic of B.
Summary of the invention
In view of this, the present invention proposes a kind of image element circuit of display.This image element circuit can be finished by the α-Si TFT of n type, and need not use LTPS TFT.And can pass through channel width/channel length ratio of the TFT of adjustment pixel itself, compensate three kinds of different effects of pixel characteristic of red, green, blue, and need not use drive IC to give different data currents.
For reaching above-mentioned and other purpose, the present invention proposes a kind of image element circuit of display, and it comprises the first transistor, transistor seconds, the 3rd transistor, the 4th transistor, electric capacity and light emitting diode.Wherein, the first transistor has first drain electrode, first grid and first source electrode, and wherein first drain electrode is coupled to a data-signal electrode, and this data-signal electrode is exported a data current, and first grid is coupled to sweep trace.Transistor seconds has second drain electrode, second grid and second source electrode, and wherein second drain electrode is coupled to first source electrode, and second grid is coupled to sweep trace and first grid.The 3rd transistor has the 3rd drain electrode, the 3rd grid and the 3rd source electrode, and wherein the 3rd drain electrode is coupled to first source electrode and second drain electrode, and the 3rd grid is coupled to second source electrode.The 4th transistor has the 4th drain electrode, the 4th grid and the 4th source electrode, and wherein the 4th drain electrode is coupled to a voltage source, and the 4th grid is coupled to second source electrode and the 3rd grid, and the 4th source electrode is coupled to the 3rd source electrode.Electric capacity has first end and second end, and wherein first end is coupled to second source electrode, the 3rd grid and the 4th grid, and second end is coupled to the 3rd source electrode and the 4th source electrode.And light emitting diode has positive pole and negative pole, and wherein positive pole is coupled to the 3rd source electrode, the 4th source electrode and second end, and negative pole is coupled to earth terminal.
In an embodiment of the present invention, by adjusting the 3rd transistorized channel width/channel length ratio, and the 4th transistorized channel width/channel length ratio, can make the 4th transistorized drive current of flowing through be different from data current.
In an embodiment of the present invention, light emitting diode is organic LED or is polymer LED.
In an embodiment of the present invention, the first transistor, transistor seconds, the 3rd transistor and the 4th transistor can be n type amorphous silicon film transistor (α-Si TFT).
The present invention also proposes a kind of image element circuit of display in addition, and it comprises the first transistor, transistor seconds, the 3rd transistor, the 4th transistor, electric capacity and light emitting diode.Wherein, the first transistor has first drain electrode, first grid and first source electrode, and wherein first drain electrode is coupled to a data-signal electrode, and this data-signal electrode is exported a data current, and first grid is coupled to sweep trace.Transistor seconds has second drain electrode, second grid and second source electrode, and wherein second drain electrode is coupled to the data current and first drain electrode, and second grid is coupled to sweep trace and first grid.The 3rd transistor has the 3rd drain electrode, the 3rd grid and the 3rd source electrode, and wherein the 3rd drain electrode is coupled to first source electrode, and the 3rd grid is coupled to second source electrode.The 4th transistor has the 4th drain electrode, the 4th grid and the 4th source electrode, and wherein the 4th drain electrode is coupled to a voltage source, and the 4th grid is coupled to second source electrode and the 3rd grid, and the 4th source electrode is coupled to the 3rd source electrode.Electric capacity has first end and second end, and wherein first end is coupled to second source electrode, the 3rd grid and the 4th grid, and second end is coupled to the 3rd source electrode and the 4th source electrode.And light emitting diode has positive pole and negative pole, and wherein positive pole is coupled to the 3rd source electrode, the 4th source electrode and second end, and negative pole is coupled to earth terminal.
In sum, the present invention can make the mode of current-driven pixel, and the α that passes through-Si TFT finishes, and need not use LTPS TFT.And can pass through channel width/channel length ratio of the TFT of adjustment pixel itself, compensate three kinds of different effects of pixel characteristic of R, G and B, and need not use drive IC to give different data currents.
Description of drawings
For allowing above and other objects of the present invention, feature and advantage, can become apparent more, preferred embodiment cited below particularly, and cooperate appended icon, be described below in detail:
Fig. 1 illustrates is structural drawing according to the image element circuit of the display of a preferred embodiment of the present invention;
Fig. 2 illustrates is circuit diagram according to each pixel in the image element circuit of a preferred embodiment of the present invention display; And
Fig. 3 illustrates is the circuit diagram of each pixel in the image element circuit of the display of another preferred embodiment according to the present invention.
Symbol description among the figure:
10: pixel
20,30: image element circuit
11: the data-signal electrode
12: scan signal electrode
13: data line
14: sweep trace
T1, T2, T3, T4, T5, T6, T7, T8: transistor
C1, C2: electric capacity
OLED1, OLED2: Organic Light Emitting Diode
Embodiment
Please refer to Fig. 1, it illustrates is structural drawing according to the image element circuit of the display of a preferred embodiment of the present invention.The structure of this image element circuit is the structure of array, and it comprises data-signal electrode 11, scan signal electrode 12, data line 13 and sweep trace 14.In this embodiment, data-signal electrode 11 meeting supplying electric currents are to data line 13, and scan signal electrode 12 meeting service voltages are to sweep trace 14.In addition, each the bar data line in the data line 13 and each the bar sweep trace in the sweep trace 14 can constitute a pixel 10.
Image element circuit figure according to the display of a preferred embodiment of the present invention please refer to Fig. 2 and illustrates.Image element circuit 20 comprises transistor T 1, transistor T 2, transistor T 3, transistor T 4, capacitor C and light emitting diode.And in the present embodiment, light emitting diode is realized with Organic Light Emitting Diode OLED1.In addition, transistor T 1, transistor T 2, transistor T 3 and transistor T 4 are the α-Si TFT of n type.The beneath structure that will narrate image element circuit 20.
Transistor T 1, T2, T3 and T4 are three-terminal element, have a drain electrode, a grid and one source pole respectively.Capacitor C 1 has first end and second end.And Organic Light Emitting Diode OLED1 has positive pole and negative pole.Wherein, the drain electrode of transistor T 1 can be coupled to the data-signal electrode, and the data-signal electrode can be carried a data current.The grid of the grid of transistor T 1 and transistor T 2 can be coupled to sweep trace.The source electrode of transistor T 1 can be coupled to the drain electrode of transistor T 2 and the drain electrode of transistor T 3.The source electrode of transistor T 2 can be couple to the grid of transistor T 3, the grid of transistor T 4 and first end of capacitor C 1.The source electrode of transistor T 3 can be couple to the source electrode of transistor T 4, second end of capacitor C 1 and the positive pole of Organic Light Emitting Diode OLED1.The drain electrode of transistor T 4 can be coupled to a voltage source V
DDAnd the negative pole of Organic Light Emitting Diode OLED1 can be couple to earth terminal.
Next will narrate the operation situation of image element circuit 20.In the present embodiment, the tentation data electric current is 1 μ ampere, and transistor T 3 and transistor T 4 have identical critical voltage (Threshold Voltage).When sweep trace is set in noble potential, can make the grid of transistor T 1 and the voltage V between the source electrode
Gs1Greater than the critical voltage of transistor T 1, and can make the grid of transistor T 2 and the voltage V between the source electrode
Gs2Greater than the critical voltage of transistor T 2, and make transistor T 1 and transistor T 2 conductings respectively.At this moment, data current can flow through T1 and T2, and to capacitor C 1 charging.When the voltage of capacitor C 1 charging arrives the critical voltage of transistor T 3, transistor T 3 meeting conductings, the data current of 1 μ ampere is promptly by transistor T 3.Because the critical voltage of transistor T 4 is identical with the critical voltage of transistor T 3,, and flow through the drive current of a current value so transistor T 4 also can conducting.By the voltage that capacitor C 1 is charged, can make the grid of transistor T 3 and the voltage V between the source electrode
Gs3Be same as the grid of transistor T 4 and the voltage V between the source electrode
Gs4Channel width/channel length of supposing transistor T 3 and transistor T 4 is than identical, and then the drive current of transistor T 4 also is 1 μ ampere.In this example, when transistor T 3 and transistor T 4 conductings, the electric current that drives Organic Light Emitting Diode OLED1 can arrive 2 μ amperes in the of short duration time; When sweep trace is set in electronegative potential, transistor T 1 and transistor T 2 can be closed, this moment, transistor T 3 no currents flow through, but the voltage that capacitor C 1 is charged is still kept, and make transistor T 4 keep the drive current of current value before, use the lasting Organic Light Emitting Diode OLED1 that drives, and the electric current of driving Organic Light Emitting Diode OLED1 is identical with the drive current (1 μ ampere) of transistor T 4.And because Organic Light Emitting Diode OLED1 itself has the characteristic of electric capacity, so 2 of short duration μ Ampere currents help the charging to Organic Light Emitting Diode OLED1, the state that Organic Light Emitting Diode OLED1 is reached capacity at faster speed.
Transistor at the formula of the drain current of saturation region is: I
d=(1/2) * μ
n* C
Ox* (W/L) * (V
Gs-V
Th)
2, electronics mobility μ wherein
nAnd the grid capacitance C on the unit area
OxBe definite value, V
ThBe transistorized critical voltage, W is transistorized channel width, and L is transistorized channel length.Thus formula as can be known because V
Gs3=V
Gs4So,, promptly can adjust the current ratio of transistor T 3 and transistor T 4 by adjusting the channel width/channel length ratio of transistor T 3 and transistor T 4.Therefore,, can under identical data current, make the drive current of transistor T 4 be different from data current, therefore can compensate R, G and three kinds of different effects of element characteristic of B by adjusting the channel width/channel length ratio of transistor T 3 and transistor T 4.And with the mode of existing a kind of current-driven pixel more as can be known, because the characteristic of three kinds of pixels of red, green, blue of OLED display have nothing in common with each other, therefore must use drive IC to give different data currents, compensate three kinds of different effects of pixel characteristic of red, green, blue.Be noted that acting as data current and only can flowing through selecteed sweep trace of transistor T 1 in addition; And acting as when sweep trace is set in noble potential of transistor T 2, can be to capacitor C 1 charging; And when sweep trace is set in electronegative potential, can be used for preventing the discharge of capacitor C 1, and make the V of transistor T 4
Gs4Be maintained.
And the image element circuit figure of the present invention's second preferred embodiment display please refer to Fig. 3 and illustrates.Image element circuit 30 comprises transistor T 5, transistor T 6, transistor T 7, transistor T 8, capacitor C 2 and OLED2, and wherein transistor T 5, transistor T 6, transistor T 7 and transistor T 8 are the α-Si TFT of n type.The beneath structure that will narrate image element circuit 30.
Transistor T 5, T6, T7 and T8 are three-terminal element, have a drain electrode, a grid and one source pole respectively.Capacitor C 2 has first end and second end.And OLED2 has positive pole and negative pole.Wherein, the drain electrode of transistor T 5 can be coupled to the drain electrode and the data-signal electrode of transistor T 6, and the data-signal electrode can be carried a data current.The grid of the grid of transistor T 5 and transistor T 6 can be coupled to sweep trace.The source electrode of transistor T 5 can be coupled to the drain electrode of transistor T 7.The source electrode of transistor T 6 can be couple to the grid of transistor T 7, the grid of transistor T 8 and first end of capacitor C 2.The source electrode of transistor T 7 can be couple to the source electrode of transistor T 8, second end of capacitor C 2 and the positive pole of Organic Light Emitting Diode OLED2.The drain electrode of transistor T 8 can be coupled to a voltage source V
DDAnd the negative pole of Organic Light Emitting Diode OLED2 can be couple to earth terminal.
Relatively the structure of first preferred embodiment (Fig. 2) and second preferred embodiment (Fig. 3) as can be known, except transistor T 5 and transistor T 6 change into the parallel connection, all the other are all identical.With regard to function, the difference of two embodiment is: when the sweep trace of second preferred embodiment (Fig. 3) is set in noble potential (for example being 15 volts), and the grid of transistor T 5, source voltage difference V
Gs5And grid, the source voltage difference V of transistor T 6
Gs6All can reach 15 volts.And when the sweep trace of first preferred embodiment (Fig. 2) is set in noble potential (for example being 15 volts), the grid of transistor T 1, source voltage difference V
Gs1Add grid, the source voltage difference V of transistor T 2
Gs2Just be 15 volts.Therefore, the current ratio of transistor T 5 and transistor T 6 of the flowing through electric current height of transistor T 1 and transistor T 2 of flowing through, and make Organic Light Emitting Diode OLED2 drive current in second preferred embodiment (Fig. 3) than the Organic Light Emitting Diode OLED1 drive current height in first preferred embodiment (Fig. 2).Except above-mentioned difference, the function of two embodiment is identical.
In sum, the present invention can make the mode of current-driven pixel, and the α-SiTFT by the n type finishes, and need not use low temperature polycrystalline silicon TFT.And can pass through channel width/channel length ratio of the TFT of adjustment pixel itself, compensate three kinds of different effects of pixel characteristic of red, green, blue, and need not use drive IC to give different data currents.
Though the present invention is exposed in preferred embodiment; right its is not in order to limit the present invention; any those skilled in the art; without departing from the spirit and scope of the present invention; when can being used for a variety of modifications and variations, thus protection scope of the present invention when with claims and in conjunction with instructions and accompanying drawing the person of being defined be as the criterion.
Claims (10)
1. the image element circuit of a display comprises:
One the first transistor has one first drain electrode, a first grid and one first source electrode, and wherein first grid is coupled to the one scan line, and first drain electrode is coupled to a data-signal electrode, and the data-signal electrode is exported a data current;
One transistor seconds has one second drain electrode, a second grid and one second source electrode, and wherein second drain electrode is coupled to first source electrode, and second grid is coupled to sweep trace and first grid;
One the 3rd transistor has one the 3rd drain electrode, one the 3rd grid and one the 3rd source electrode, and wherein the 3rd drain electrode is coupled to first source electrode and second drain electrode, and the 3rd grid is coupled to second source electrode;
One the 4th transistor, have one the 4th drain electrode, one the 4th grid and one the 4th source electrode, wherein the 4th drain electrode is coupled to a power supply unit, and power supply unit has a voltage source, the 4th grid is coupled to second source electrode and the 3rd grid, and the 4th source electrode is coupled to the 3rd source electrode;
One electric capacity has one first end and one second end, and wherein first end is coupled to second source electrode, the 3rd grid and the 4th grid, and second end is coupled to the 3rd source electrode and the 4th source electrode; And
One light emitting diode has an anodal and negative pole, and wherein this positive pole is coupled to second end of the 3rd source electrode, the 4th source electrode and electric capacity, and this minus earth.
2. the image element circuit of display as claimed in claim 1, it is characterized in that: by adjusting the 3rd transistorized channel width/channel length ratio, and the 4th transistorized channel width/channel length ratio, can make the 4th transistorized electric current of flowing through be different from data current.
3. the image element circuit of display as claimed in claim 1, it is characterized in that: this light emitting diode is an organic LED.
4. the image element circuit of display as claimed in claim 1, it is characterized in that: this light emitting diode is a polymer LED.
5. the image element circuit of display as claimed in claim 1, it is characterized in that: this first transistor, transistor seconds, the 3rd transistor and the 4th transistor are n type amorphous silicon film transistor.
6. the image element circuit of a display comprises:
One the first transistor has one first drain electrode, a first grid and one first source electrode, and wherein first grid is coupled to the one scan line, and first drain electrode is coupled to a data-signal electrode, and the data-signal electrode is exported a data current;
One transistor seconds has one second drain electrode, a second grid and one second source electrode, and wherein second drain electrode is coupled to the data-signal electrode and first drain electrode, and second grid is coupled to sweep trace and first grid;
One the 3rd transistor has one the 3rd drain electrode, one the 3rd grid and one the 3rd source electrode, and wherein the 3rd drain electrode is coupled to first source electrode, and the 3rd grid is coupled to second source electrode;
One the 4th transistor, have one the 4th drain electrode, one the 4th grid and one the 4th source electrode, wherein the 4th drain electrode is coupled to a power supply unit, and power supply unit has a voltage source, the 4th grid is coupled to second source electrode and the 3rd grid, and the 4th source electrode is coupled to the 3rd source electrode;
One electric capacity has one first end and one second end, and wherein first end is coupled to second source electrode, the 3rd grid and the 4th grid, and second end is coupled to the 3rd source electrode and the 4th source electrode; And
One light emitting diode has an anodal and negative pole, and wherein this positive pole is coupled to the 3rd source electrode, the 4th source electrode and second end, and this minus earth.
7. the image element circuit of display as claimed in claim 6, it is characterized in that: by adjusting the 3rd transistorized channel width/channel length ratio, and the 4th transistorized channel width/channel length ratio, can make the 4th transistorized electric current of flowing through be different from data current.
8. the image element circuit of display as claimed in claim 6, it is characterized in that: this light emitting diode is an organic LED.
9. the image element circuit of display as claimed in claim 6, it is characterized in that: this light emitting diode is a polymer LED.
10. the image element circuit of display as claimed in claim 6, it is characterized in that: this first transistor, transistor seconds, the 3rd transistor and the 4th transistor are amorphous silicon n type thin film transistor (TFT).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021059594A CN1261918C (en) | 2002-04-10 | 2002-04-10 | Driving circuit for display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021059594A CN1261918C (en) | 2002-04-10 | 2002-04-10 | Driving circuit for display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1450517A CN1450517A (en) | 2003-10-22 |
| CN1261918C true CN1261918C (en) | 2006-06-28 |
Family
ID=28680115
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB021059594A Expired - Lifetime CN1261918C (en) | 2002-04-10 | 2002-04-10 | Driving circuit for display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1261918C (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6977470B2 (en) * | 2004-04-28 | 2005-12-20 | Au Optronics Corp. | Current-driven OLED pixel |
| CN100367336C (en) * | 2004-07-13 | 2008-02-06 | 友达光电股份有限公司 | Method for improving current driving type display picture homogeneous degree |
| KR100604053B1 (en) * | 2004-10-13 | 2006-07-24 | 삼성에스디아이 주식회사 | Light emitting display |
| CN100353402C (en) * | 2005-05-09 | 2007-12-05 | 友达光电股份有限公司 | Display unit |
| CN100451795C (en) * | 2006-11-13 | 2009-01-14 | 友达光电股份有限公司 | Pixel structure |
| US8344982B2 (en) * | 2007-10-18 | 2013-01-01 | Sharp Kabushiki Kaisha | Current-driven display device |
-
2002
- 2002-04-10 CN CNB021059594A patent/CN1261918C/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CN1450517A (en) | 2003-10-22 |
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