CN1246819C - Driving circuit of displaying device - Google Patents
Driving circuit of displaying device Download PDFInfo
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- CN1246819C CN1246819C CN 02127315 CN02127315A CN1246819C CN 1246819 C CN1246819 C CN 1246819C CN 02127315 CN02127315 CN 02127315 CN 02127315 A CN02127315 A CN 02127315A CN 1246819 C CN1246819 C CN 1246819C
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Abstract
The present invention discloses a driving circuit of a display. Two thin film transistors are added into the original driving circuit of the display to form the driving circuit of the display comprising four thin film transistors, the electric potential of a grid electrode of a driving thin film transistor can rise with the increase of the starting voltage of the driving thin film transistor, the driving current of the driving thin film transistor is unchanged, and thus, the initial value brightness of a light emitting element is unchanged. Therefore, the present invention can effectively extend the service life of the display.
Description
Technical field
The invention relates to a kind of driving circuit of display, and particularly relevant for a kind of driving circuit that can make the display that drive current remains unchanged.
Background technology
The human dynamic image that can see the earliest is the film of documentary film kenel.Afterwards, the invention of cathode-ray tube (CRT) (Cathode Ray Tube is called for short CRT) successfully derives business-like televisor, and becomes the electrical home appliances of each family's indispensability.Along with development of science and technology, the application of CRT expands to the desktop monitor in the computer industry again, and the many decades nearly that made the CRT scene.But the made all types of displays of CRT all face the problem of radiant rays, and because the structure of internal electron rifle, and make that display is bulky and take up space, so be unfavorable for thin type and lightweight.
Since above-mentioned problem, and make the researchist start to develop so-called flat-panel screens (Flat Panel Display).This field comprises LCD (Liquid Crystal Display, abbreviation LCD), Field Emission Display (Field Emission Display, abbreviation FED), Organic Light Emitting Diode (Organic Light Emitting Diode, be called for short OLED) and plasma display panel (Plasma Display Panel is called for short PDP).
Wherein, Organic Light Emitting Diode is called organic motor active display (OrganicElectroluminescence Display is called for short OELD) again, and it is the element of self-luminosity.Because the characteristic of OLED is DC low-voltage driving, high brightness, high-level efficiency, high correlative value and frivolous, and its luminous color and luster is by red (Red, abbreviation R), green (Green, be called for short G) and blue (Blue, being called for short B) three primary colors are to white degree of freedom height, so OLED is called the development priority of follow-on novel planar panel.The OLED technology is except having the frivolous and high resolving power of LCD concurrently, and the active illuminating of LED, response speed is fast with advantage such as power saving cold light source outside, multiple advantages such as the visual angle is wide in addition, color contrast is effective and cost is low.Therefore, OLED can be widely used in backlight, mobile phone, digital camera and the PDA(Personal Digital Assistant) etc. of LCD or indication panel.
From the viewpoint of type of drive, OLED can be divided into passive-matrix (Passive Matrix) type of drive and active-matrix (Active Matrix) type of drive two big kinds.The advantage of passive matrix type OLED is that structure very simply and not needs to use thin film transistor (TFT) (Thin FilmTransistor, be called for short TFT) drive, thereby cost is lower, but its shortcoming is the application that is not suitable for the high resolving power image quality, and, can produce that power consumption increases, component life reduces and problem that display performance is good etc. when large size panel develops.And the advantage of active-matrix formula OLED is except the demand that can be applicable to large-sized active matrix drive mode, and its visual angle is wide, high brightness and the fast characteristic of response speed also are very important, but its cost can be slightly higher than passive matrix type OLED.
According to the difference of type of drive, flat-panel screens can be divided into two kinds of voltage driven type and current drive-types again.Voltage driven type is applied in TFT-LCD usually, also just imports different voltage to data line, and reaches different gray scales, to reach very color purpose.The TFT-LCD of voltage driven type possess skills maturation, stable and cheap advantage.And current drive-type is applied in the display of OLED usually, just imports different electric currents to data line, and reaches different gray scales, to reach very color purpose.But the mode of this current-driven pixel needs exploitation new circuit and IC, therefore needs huge cost.Therefore, if come driving OLED, cost is greatly reduced with the Voltag driving circuit of TFT-LCD.But, when the Voltag driving circuit with TFT-LCD comes driving OLED, under long-term operation, can make the start voltage (Threshold Voltage) of drive TFT that the phenomenon of drift takes place, and make start voltage rise gradually.And TFT at the formula of the drain current of saturation region is: I
Ds=(1/2) * μ
n* C
Ox* (W/L) * (V
Gs-V
Th)
2, electronics mobility μ wherein
nAnd the grid capacitance C on the unit area
OxBe definite value, V
ThBe the start voltage of TFT, W is the channel width of TFT, and L is the passage length of TFT.Formula when start voltage rises, can make the drive current of flowing through between drain electrode and the source electrode of drive TFT reduce as can be known thus.Owing to drive current is to be used for driving OLED to make OLED luminous, so when drive current reduces, will the brightness of OLED be decreased.
For the purpose of clearer, please refer to Fig. 1, shown in it is the circuit diagram of a pixel 10 in known a kind of display.Pixel l0 comprises known a kind of driving circuit 102 and OLED (104).Above-mentioned driving circuit 102 comprises TFT1 (106), capacitor C (108) and TFT2 (110).Wherein, TFT2 (110) is called drive thin film transistors, is used for producing the drive current of driving OLED (104), so that OLED (104) is luminous.The drain electrode of TFT1 (106) is coupled to data voltage (V
Data); The grid of TFT1 (106) is coupled to scanning voltage (V
Scan); The source electrode of TFT1 (106) is coupled to first end of capacitor C (108) and the grid of TFT2 (110).The drain electrode of TFT2 (110) is coupled to positive voltage (V
Dd); The source electrode of TFT2 (110) is coupled to the positive pole of OLED (104).Second end of capacitor C (108) is coupled to voltage V
Ss1, V wherein
Ss1Be negative voltage or earthing potential.And the negative pole of OLED (104) is coupled to voltage V
Ss, V wherein
SsBe negative voltage or earthing potential.
And the V of known a kind of driving circuit 102
Dd, V
Scan, V
Data, and the voltage (V of the grid of TFT2 (110)
G2) between sequential chart, please refer to shown in Figure 2.At first be noted that and work as V
ScanWhen being set in high voltage standard position, TFT1 (104) can conducting.Work as V
ScanWhen being set in low-voltage standard position, TFT1 (104) can close.In addition, be noted that V
ScanThe time that the accurate position of high voltage and accurate of low-voltage occur is called the time (being the T shown in Fig. 2) of a frame (Frame), wherein the time of a frame, is generally 1/60 second, that is frequency is 60Hz, and a frame will be formed the image of a pixel.As shown in Figure 2, when at V
ScanIn the time of during the accurate position of high voltage, V
DataFor the accurate position of high voltage, so always make V
G2Maintain positive voltage, and make V
G2Rise gradually.V
G2The result of Shang Shenging will cause the oxide layer of the grid of TFT2 (110) to accumulate more trapped charge gradually, then make the start voltage of TFT2 (110) produce drift, and start voltage is risen.Such result will make the drive current of flowing through between drain electrode and the source electrode of TFT2 (110) reduce, and therefore can make the brightness of OLED (104) reduce.
Summary of the invention
Because the problem that above-mentioned technique known exists, the present invention proposes a kind of driving circuit of display.The present invention adds two thin film transistor (TFT)s and the driving circuit that becomes the display that comprises four thin film transistor (TFT)s in the driving circuit of original display, and make that the current potential of grid of drive thin film transistors can be along with the increase of the start voltage of drive thin film transistors and rise, and then make the drive current of drive thin film transistors remain unchanged, the initial value brightness of light-emitting component is remained unchanged.
For reaching above-mentioned and other purpose, the present invention proposes a kind of driving circuit of display.This driving circuit is used for driven light-emitting element, and this light-emitting component has positive pole and negative pole.This driving circuit comprises the first transistor, electric capacity, transistor seconds, the 3rd transistor and the 4th transistor.Wherein, the first transistor has first drain electrode, first grid and first source electrode, and wherein first drain electrode is coupled to oppisite phase data voltage, and first grid is coupled to scanning voltage.Electric capacity has first end and second end, and wherein first end is coupled to first source electrode, and second end is coupled to first voltage.Transistor seconds has second drain electrode, second grid and second source electrode, and wherein second grid is coupled to first end of first source electrode and electric capacity, and second source electrode is coupled to first voltage.The 3rd transistor has the 3rd drain electrode, the 3rd grid and the 3rd source electrode, and wherein the 3rd drain electrode is coupled to the 3rd grid and second voltage, and the 3rd source electrode is coupled to second drain electrode.And the 4th transistor has the 4th drain electrode, the 4th grid and the 4th source electrode, and wherein the 4th drain electrode is coupled to tertiary voltage, and the 4th grid is coupled to second drain electrode and the 3rd source electrode, and the 4th source electrode is coupled to the positive pole of light-emitting component.
In a preferred embodiment of the present invention, the channel width/passage length of transistor seconds is than being four times of the 3rd transistorized channel width/passage length ratio.
In a preferred embodiment of the present invention, the first transistor, transistor seconds, the 3rd transistor and the 4th transistor are n type amorphous silicon film transistor.
In a preferred embodiment of the present invention, first voltage is negative voltage or earthing potential.
In a preferred embodiment of the present invention, second voltage and tertiary voltage are positive voltage.
In a preferred embodiment of the present invention, the negative pole of light-emitting component is coupled to the 4th voltage.
Wherein, the 4th voltage is negative voltage or earthing potential.
In a preferred embodiment of the present invention, light-emitting component is Organic Light Emitting Diode or polymer LED.
The present invention also proposes a kind of display.This display comprises several pixels.Each pixel comprises the first transistor, electric capacity, transistor seconds, the 3rd transistor, the 4th transistor and light-emitting component.Wherein, the first transistor has first drain electrode, first grid and first source electrode, and wherein first drain electrode is coupled to oppisite phase data voltage, and first grid is coupled to scanning voltage.Electric capacity has first end and second end, and wherein first end is coupled to first source electrode, and second end is coupled to first voltage.Transistor seconds has second drain electrode, second grid and second source electrode, and wherein second grid is coupled to first end of first source electrode and electric capacity, and second source electrode is coupled to first voltage.The 3rd transistor has the 3rd drain electrode, the 3rd grid and the 3rd source electrode, and wherein the 3rd drain electrode is coupled to the 3rd grid and second voltage, and the 3rd source electrode is coupled to second drain electrode.The 4th transistor has the 4th drain electrode, the 4th grid and the 4th source electrode, and wherein the 4th drain electrode is coupled to tertiary voltage, and the 4th grid is coupled to second drain electrode and the 3rd source electrode.And light-emitting component has positive pole and negative pole, and wherein positive pole is coupled to the 4th source electrode, and negative pole is coupled to the 4th voltage.
In a preferred embodiment of the present invention, the channel width/passage length of transistor seconds is than being four times of the 3rd transistorized channel width/passage length ratio.
In a preferred embodiment of the present invention, the first transistor, transistor seconds, the 3rd transistor and the 4th transistor are n type amorphous silicon film transistor.
In a preferred embodiment of the present invention, first voltage is negative voltage or earthing potential.
In a preferred embodiment of the present invention, second voltage and tertiary voltage are positive voltage.
In a preferred embodiment of the present invention, the 4th voltage is negative voltage or earthing potential.
In a preferred embodiment of the present invention, light-emitting component is Organic Light Emitting Diode or polymer LED.
In sum, the present invention adds two thin film transistor (TFT)s and the driving circuit that becomes the display that comprises four thin film transistor (TFT)s in the driving circuit of original display, and make that the current potential of grid of drive thin film transistors can be along with the increase of the start voltage of drive thin film transistors and rise, and then make the drive current of drive thin film transistors remain unchanged, the initial value brightness of light-emitting component is remained unchanged.Therefore the present invention can effectively increase the serviceable life of display.
Description of drawings
The invention will be further described below in conjunction with accompanying drawing:
Shown in Figure 1 is the circuit diagram of a pixel in known a kind of display;
That shown in Figure 2 is the V of known a kind of Voltag driving circuit
Dd, V
Scan, V
Data, and V
G2Between sequential chart;
The circuit diagram of a pixel in the display of a preferred embodiment of the present invention that shown in Figure 3 is.
The critical elements label:
10,30: pixel
102,302: driving circuit
104：OLED
106，306：TFT1
108,308: electric capacity
110，310：TFT2
304: light-emitting component
312：TFT3
314：TFT4
Embodiment
Please refer to Fig. 3, shown in it is the circuit diagram of a pixel 30 in the display of a preferred embodiment of the present invention.Pixel 30 comprises the driving circuit 302 and the light-emitting component 304 of the display of a preferred embodiment of the present invention.Wherein, light-emitting component 304 can be OLED or polymer LED.And above-mentioned driving circuit 302 comprises TFT1 (306), capacitor C (308), TFT2 (310), TFT3 (312) and TFT4 (314).Wherein, TFT4 (314) is called drive thin film transistors, is in order to produce the drive current of driven light-emitting element 304, so that light-emitting component 304 is luminous.And the channel width of TFT2 (310)/passage length is than four times for the channel width of TFT3 (312)/passage length ratio.Be noted that in addition TFT1 (306), TFT2 (310), TFT3 (312) and TFT4 (314) are n type amorphous silicon film transistor (α-Si TFT).And, therefore in the explanation of this preferred embodiment, suppose other start voltage of branch V of TFT1 (306), TFT2 (310), TFT3 (312) and TFT4 (314) because the start voltage of amorphous silicon film transistor is almost equal
Th1, V
Th2, V
Th3, and V
Th4All identical.To narrate the structure of the each several part of Voltag driving circuit 302 below.
The drain electrode of TFT1 (306) is coupled to oppisite phase data voltage (V
Data1); The grid of TFT1 (306) is coupled to scanning voltage (V
Scan); The source electrode of TFT1 (306) is coupled to first end of capacitor C (308) and the grid of TFT2 (310).Wherein, oppisite phase data voltage is the data voltage (V among Fig. 1
Data) anti-phase.This is because TFT2 (310) and TFT3 (312) are one group of phase inverter, for the voltage of the grid of the TFT2 (110) among the voltage of the grid that makes TFT4 (314) and Fig. 1 remains on identical high levle or low level, so must make oppisite phase data voltage be the data voltage (V among Fig. 1
Data) anti-phase.Second end of capacitor C (108) is coupled to voltage V
Ss1, V wherein
Ss1Be negative voltage or earthing potential.
The drain electrode of TFT2 (310) is coupled to the source electrode of TFT3 (312) and the grid of TFT4 (314); The source electrode of TFT2 (310) is coupled to voltage V
Ss1The drain electrode of TFT3 (312) is coupled to grid and the positive voltage (V of TFT3 (312)
Dd1).The drain electrode of TFT4 (314) is coupled to positive voltage (V
Dd2); The source electrode of TFT4 (314) is coupled to the positive pole of light-emitting component (304).And the negative pole of light-emitting component (304) is coupled to voltage V
Ss2, V wherein
Ss2Be negative voltage or earthing potential.
Because under long-time operation, the start voltage of TFT2 among Fig. 1 (110) can rise owing to the accumulation of electric charge in the increase along with the time, therefore the present invention adds TFT2 (310) and TFT3 (312) in the driving circuit of Fig. 1, so that the current potential of the grid of TFT4 (314) can be along with the increase of the start voltage of TFT4 (314) and is risen, and then the drive current that the drive current that makes remains unchanged remains unchanged, and the initial value brightness of light-emitting component is remained unchanged.To illustrate below how the present invention makes the drive current of TFT4 (314) remain unchanged.
Work as V
ScanWhen being set in high voltage standard position, TFT1 (306) can conducting.At this moment, the grid voltage of TFT2 (310) is V
Data1The electric current of TFT2 because flow through (310) and TFT3 (312) equates, so at the formula of the drain current of saturation region as can be known by TFT:
(1/2)×μ
n×C
ox×(W/L)
2×(V
data1-V
ss1-V
th2)
2＝(1/2)×μ
n×C
ox×(W/L)
3×(V
dd1-V
g4-V
th3)
2 (1)
Electronics mobility μ wherein
nAnd the grid capacitance C on the unit area
OxBe definite value, (W/L)
2Be channel width/passage length ratio of TFT2 (310), (W/L)
3Be channel width/passage length ratio of TFT3 (312), V
G4Current potential for the grid of TFT4 (314).Because supposed V
Th2=V
Th3=V
Th4And make (W/L)
2=4 (W/L)
3, then can get V from (1) formula
G4=V
Dd1+ 2V
Ss1-2V
Data1+ V
Th4=constant-2V
Data1+ V
Th4Because the drive current I of TFT4 (314)
Ds4=(1/2) * μ
n* C
Ox* (W/L)
4* (V
G4-V
S4-V
Th4)
2=K * (V
G4-V
S4-V
Th4)
2, V wherein
S4Be the source voltage of TFT4 (314), and K is a constant, so with V
G4=constant-2V
Data1+ V
Th4Bring the drive current I that can get TFT4 (314) into
Ds4=K * (constant-2V
Data1-V
S4)
2, because I
Ds4In V
Th4The factor can be ignored, so I
Ds4Be not subjected to V
Th4Influence and can keep definite value.Because I
Ds4Remain unchanged, thus can make the brightness of light-emitting component 302 maintain initial value brightness, and then increase the serviceable life of display.
In sum, the present invention adds two thin film transistor (TFT)s and the driving circuit that becomes the display that comprises four thin film transistor (TFT)s in the driving circuit of original display, and make that the current potential of grid of drive thin film transistors can be along with the increase of the start voltage of drive thin film transistors and rise, and then make the drive current of drive thin film transistors remain unchanged, the initial value brightness of light-emitting component is remained unchanged.Therefore the present invention can effectively increase the serviceable life of display.
Though the present invention is disclosed in preferred embodiment, right the foregoing description is not in order to qualification the present invention, so protection scope of the present invention should be as the criterion with claims institute restricted portion.
Claims (23)
1. the driving circuit of a display, in order to drive a light-emitting component according to a data voltage and scan voltage, this light-emitting component has a positive pole and a negative pole, wherein this negative pole couple a negative voltage and ground connection one of them, this driving circuit comprises:
One the first transistor has one first drain electrode, a first grid and one first source electrode, and wherein this first drain electrode is coupled to an oppisite phase data voltage, and this first grid is coupled to this scanning voltage;
One electric capacity has one first end and one second end, and wherein this first end is coupled to this first source electrode, and this second end is coupled to one first voltage;
One transistor seconds has one second drain electrode, a second grid and one second source electrode, and wherein this second grid is coupled to this first end of this first source electrode and this electric capacity, and this second source electrode is coupled to this first voltage;
One the 3rd transistor has one the 3rd drain electrode, one the 3rd grid and one the 3rd source electrode, and wherein the 3rd drain electrode is coupled to the 3rd grid and one second voltage, and the 3rd source electrode is coupled to this second drain electrode;
One the 4th transistor, have one the 4th drain electrode, one the 4th grid and one the 4th source electrode, wherein the 4th drain electrode is coupled to a tertiary voltage, and the 4th grid is coupled to this second drain electrode and the 3rd source electrode, and the 4th source electrode is coupled to this positive pole of this light-emitting component.
2. the driving circuit of display as claimed in claim 1 is characterized in that: the channel width of above-mentioned transistor seconds/passage length is than four times for the 3rd transistorized channel width/passage length ratio.
3. the driving circuit of display as claimed in claim 1, it is characterized in that: above-mentioned the first transistor, transistor seconds, the 3rd transistor and the 4th transistor are n type amorphous silicon film transistor.
4. the driving circuit of display as claimed in claim 1, it is characterized in that: the first above-mentioned voltage is negative voltage.
5. the driving circuit of display as claimed in claim 1, it is characterized in that: the first above-mentioned voltage is earthing potential.
6. the driving circuit of display as claimed in claim 1, it is characterized in that: the second above-mentioned voltage is positive voltage.
7. the driving circuit of display as claimed in claim 1, it is characterized in that: above-mentioned tertiary voltage is a positive voltage.
8. the driving circuit of display as claimed in claim 1, it is characterized in that: this negative pole of above-mentioned light-emitting component is coupled to one the 4th voltage.
9. the driving circuit of display as claimed in claim 8, it is characterized in that: the 4th above-mentioned voltage is negative voltage.
10. the driving circuit of display as claimed in claim 8, it is characterized in that: the 4th above-mentioned voltage is earthing potential.
11. the driving circuit of display as claimed in claim 1 is characterized in that: above-mentioned light-emitting component is an Organic Light Emitting Diode.
12. the driving circuit of display as claimed in claim 1 is characterized in that: above-mentioned light-emitting component is a polymer LED.
13. a display has a data voltage and scan voltage, and this display comprises a plurality of pixels, it is characterized in that each those pixel comprises:
One the first transistor has one first drain electrode, a first grid and one first source electrode, and wherein this first drain electrode is coupled to an oppisite phase data voltage, and this first grid is coupled to this scanning voltage;
One electric capacity has one first end and one second end, and wherein this first end is coupled to this first source electrode, and this second end is coupled to one first voltage;
One transistor seconds has one second drain electrode, a second grid and one second source electrode, and wherein this second grid is coupled to this first end of this first source electrode and this electric capacity, and this second source electrode is coupled to this first voltage;
One the 3rd transistor has one the 3rd drain electrode, one the 3rd grid and one the 3rd source electrode, and wherein the 3rd drain electrode is coupled to the 3rd grid and one second voltage, and the 3rd source electrode is coupled to this second drain electrode;
One the 4th transistor has one the 4th drain electrode, one the 4th grid and one the 4th source electrode, and wherein the 4th drain electrode is coupled to a tertiary voltage, and the 4th grid is coupled to this second drain electrode and the 3rd source electrode;
One light-emitting component has an anodal and negative pole, and wherein this positive pole is coupled to the 4th source electrode, and this negative pole is coupled to one the 4th voltage.
14. display as claimed in claim 13 is characterized in that: the channel width of above-mentioned transistor seconds/passage length is than four times for the 3rd transistorized channel width/passage length ratio.
15. display as claimed in claim 13 is characterized in that: above-mentioned the first transistor, transistor seconds, the 3rd transistor and the 4th crystal piping n type amorphous silicon film transistor.
16. display as claimed in claim 13 is characterized in that: the first above-mentioned voltage is negative voltage.
17. display as claimed in claim 13 is characterized in that: the first above-mentioned voltage is earthing potential.
18. display as claimed in claim 13 is characterized in that: the second above-mentioned voltage is positive voltage.
19. display as claimed in claim 13 is characterized in that: above-mentioned tertiary voltage is a positive voltage.
20. display as claimed in claim 13 is characterized in that: the 4th above-mentioned voltage is negative voltage.
21. display as claimed in claim 13 is characterized in that: the 4th above-mentioned voltage is earthing potential.
22. display as claimed in claim 13 is characterized in that: above-mentioned light-emitting component is an Organic Light Emitting Diode.
23. display as claimed in claim 13 is characterized in that: above-mentioned light-emitting component is a polymer LED.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02127315 CN1246819C (en) | 2002-07-31 | 2002-07-31 | Driving circuit of displaying device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02127315 CN1246819C (en) | 2002-07-31 | 2002-07-31 | Driving circuit of displaying device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1472720A CN1472720A (en) | 2004-02-04 |
| CN1246819C true CN1246819C (en) | 2006-03-22 |
Family
ID=34143501
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02127315 Expired - Lifetime CN1246819C (en) | 2002-07-31 | 2002-07-31 | Driving circuit of displaying device |
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|---|---|
| CN (1) | CN1246819C (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4408716B2 (en) * | 2004-02-19 | 2010-02-03 | 三洋電機株式会社 | Reverse polarity voltage generator |
| CN100407273C (en) * | 2004-04-12 | 2008-07-30 | 友达光电股份有限公司 | Display array and display panel |
| US7382173B1 (en) * | 2006-12-04 | 2008-06-03 | Himax Technologies Limited | Level shift circuit with voltage pulling |
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2002
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|---|---|
| CN1472720A (en) | 2004-02-04 |
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