CN1256802C - Crystal oscillator - Google Patents
Crystal oscillator Download PDFInfo
- Publication number
- CN1256802C CN1256802C CN 02154805 CN02154805A CN1256802C CN 1256802 C CN1256802 C CN 1256802C CN 02154805 CN02154805 CN 02154805 CN 02154805 A CN02154805 A CN 02154805A CN 1256802 C CN1256802 C CN 1256802C
- Authority
- CN
- China
- Prior art keywords
- integrated circuit
- circuit chip
- resettlement section
- crystal oscillator
- quartz crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Oscillators With Electromechanical Resonators (AREA)
Abstract
The inventive a crystal oscillator, includes a crystal resonator arrnged on top of the container having an opening lower ccupancy part underside, an IC integrated circuit chip, arranged in the lower ccupancy part, for controlling the oscillating action of the crystal oscillator, a filling resin injected in the packaged region of the IC integrated circuit chip, an external terminal electrode, formed at four corners under the container, connected with the IC integrated circuit chip, in which the lower ccupancy part has both pairs of projection parts to be protruded at the opposite positions between the external terminal electrodes; an monitoring-electrode gasket for monitoring the oscillating characteristic of the crystal oscillator is arranged on the bottom surface of a pair of projection parts opposite to each other in both pairs of projection parts. The space between the monitoring-electrode gaskets can be enlarged because the monitoring-electrode gasket is is arranged on the bottom surface of a pair of projection parts opposite to each other, and the stray capacity produced between them can also be controlled.
Description
Technical field
The present invention relates to a kind of crystal oscillator that is used for such as mobile communication apparatus etc., particularly a kind ofly can directly be installed in the crystal oscillator that uses on the printed circuit board (PCB).
Background technology
Crystal oscillator is a kind of very important parts that are used to produce the frequency of oscillation of receiving and sending messages of control mobile communication apparatus etc.This crystal oscillator that is used for mobile communication apparatus etc. is accompanied by the miniaturization of mobile communication apparatus, and its volume also must reach miniaturization.
And even the environment that variations in temperature is very big uses down around, it is stable also frequency to be in.For this reason, will carry out a kind of temperature-compensating to the intrinsic temperature frequency characteristic of quartz crystal.This temperature-compensating be for the frequency of the intrinsic temperature frequency characteristic that makes quartz crystal (for example, under the situation of the smooth quartz crystal of AT cutting thickness, just have the temperature frequency characteristic of representing with three-dimensional curve), corresponding to temperature on every side, be in the temperature-compensating of steadily carrying out.
Carry out the crystal oscillator of this kind temperature-compensating, memory function, temperature induction unit, variable capacitance diode function, controlled function that comprise oscillating converter on circuit, stores the temperature compensation data that assigned temperature is carried out at least etc. is integrated in IC integrated circuit chip and quartz crystal together, use the capacitance that carries out the variable capacitance diode of work based on temperature compensation data, will be along with the variation of environment temperature the frequency of oscillation of the quartz crystal of change be adapted to designated value, thereby make the frequency of oscillation of oscillator become steady.
As a kind of crystal oscillator that can reach such miniaturization and high-precision temperature-compensating, applicant of the present invention has proposed a kind of crystal oscillator shown below.Have below it is included in the approximate rectangular shape of a resettlement section container, be encapsulated in this container upper side quartz crystal, be received in the above-mentioned resettlement section by adorning and the IC integrated circuit chip that is connected with above-mentioned quartz crystal and be formed at least four angles below the said vesse and the external terminal electrode that is connected with above-mentioned IC integrated circuit chip.
The crystal oscillator of this motion, thereby the shape that employing is arranged to the opening of described resettlement section can stretch between two adjacent from the same side external terminal electrodes forms so-called extension, and the structure of the electronic component of sheets such as a shunt capacitance that is connected with the IC integrated circuit chip or load capacity is set at this extension.Like this, just can make to form the most effective structural arrangements between IC integrated circuit chip, electronic component and the resettlement section of required configuration below container and the external terminal electrode, reach the miniaturization of oscillator thus.
Further, in order to adapt to for example following subminaturization requirement of 5.0 * 3.2 * 1.5mm, can become approximate rectangular so that the opening shape of resettlement section is corresponding with the shape of IC integrated circuit chip, also load capacitor or by-pass capacitor etc. can be integrated in the IC integrated circuit chip, perhaps by-pass capacitor is configured in the outside of crystal oscillator, promptly be configured in the assembling crystal oscillator wiring substrate first-class.
Yet, as above-mentioned crystal oscillator, when the control circuit that will control quartz crystal vibration (comprising temperature-compensating), be configured in the resettlement section of container as an IC integrated circuit chip, and, for miniaturization, make the opening shape of resettlement section become corresponding and during than the rectangle of the big circle of size of IC integrated circuit chip, following problem just must be given solution with the shape of IC integrated circuit chip.
That is to say that structure in the past is, with a pair of monitoring electrode pad of the intrinsic temperature characteristic that is used for measuring the quartz crystal that is configured in vessel surface, be configured in resettlement section that the IC integrated circuit chip is housed need not part central portion.Yet in structure in the past, along with the realization of miniaturization, it is more approaching that the distance between the monitoring electrode pad also becomes, like this, and owing to the stray capacitance that produces between the monitoring electrode pad makes the characteristic measurement of quartz crystal be subjected to bad influence.
And, when a pair of monitoring electrode pad is configured in central part in the resettlement section, after with the configuration of IC integrated circuit chip, when in the resettlement section, injecting counterdie resin and sealing resin etc. around the IC integrated circuit chip, gap between the encapsulating face of the bottom surface of resettlement section and IC integrated circuit chip, owing to being uneven of forming of the thickness because of the monitoring electrode pad of central portion hindered flowing of potting resin, make air be trapped in the encapsulation position of IC integrated circuit chip easily.That is to say, although the thickness of monitoring electrode pad itself is not so thick, because the space between the encapsulating face of the bottom surface of resettlement section and IC integrated circuit chip was just narrow originally, so the influence of monitoring electrode pad is just increased thereupon.Like this, in case air trapping, will make the deterioration that becomes of the bond strength of IC integrated circuit chip at the encapsulation position of IC integrated circuit chip.
And owing to the realization along with miniaturization, it is narrow that the space of resettlement section also becomes, thereby be directed at the inwall of resettlement section and the gap turn narrow between the IC integrated circuit chip periphery.Like this, the operation of feasible assembling IC integrated circuit chip, the operation of injecting potting resins such as counterdie resin and sealing resin all becomes and is difficult to carry out, and potting resin also is difficult to spread the encapsulating face that enters the IC integrated circuit chip.
And, because along with the realization of miniaturization, the flat shape of the package-side of the outside wiring substrate of crystal oscillator diminishes, so, make the area that is configured in resettlement section external terminal electrode on every side also just diminish, so externally the installation strength on the wiring substrate is just weakened.
The present invention in view of the above-mentioned problems, a kind of crystal oscillator is provided, even this crystal oscillator is under the situation of miniaturization, also can under stable state, measure the intrinsic temperature characteristic that is configured in the quartz crystal above the container, and potting resin can be injected into reliably the encapsulation position of IC integrated circuit chip, can guarantee the installation strength on the wiring substrate externally again.
Summary of the invention
Crystal oscillator of the present invention, comprise that configuration has the quartz crystal 5 of a top side of container 1 of approximate rectangular shape of the following resettlement section 1B of an opening in its lower section, be assemblied in the IC integrated circuit chip 8 of the oscillation action that is used to control described quartz crystal 5 in the described down resettlement section 1B, be injected into the potting resin 7 of the packaging area of IC integrated circuit chip in the described resettlement section down, be formed on four angles below the described container and the external terminal electrode 9 that is connected with described IC integrated circuit chip, 9, wherein said resettlement section down, on the position on the mutual opposite between each external terminal electrode that the place, four angles below described container forms, have two pairs of outstanding extensions, constitute a kind of shape that is similar to cross; In described two pairs of extensions wherein mutually on the bottom surface of a pair of extension on opposite, be provided with the monitoring electrode pad 10,10 of the oscillating characteristic that is used for monitoring described quartz crystal.
According to this structure, owing to be used for measuring on the bottom surface of a pair of extension that the monitoring electrode pad of the intrinsic temperature characteristic of quartz crystal is configured in mutual opposite, so, interval between the monitoring electrode pad can be elongated, and the stray capacitance that produces between the monitoring electrode pad also can be controlled effectively.Therefore, can under stable state, measure the intrinsic temperature characteristic of quartz crystal, thereby can be improved so that measure precision.
And when the packaging area of the IC of resettlement section integrated circuit chip injects potting resin, if inject resin from one of them extension of a pair of extension that is provided with the monitoring electrode pad, another extension then plays an effect of pulling out pore.And, because the bottom central part in the resettlement section does not have the monitoring electrode pad, so, just the delay of air can be do not produced, thereby resin can be injected reliably in the gap between the bottom surface of IC integrated circuit chip and resettlement section.
And, because the extension of resettlement section is formed between the external terminal electrode, just do not need shape to external terminal electrode to change or it is diminished, so can maintain the installation strength on the outside wiring substrate like this.
And, be formed in the bottom surface of extension owing to be used for measuring the monitoring electrode pad of the intrinsic temperature characteristic of quartz crystal, and be not exposed at the periphery of container, therefore also can not append on the monitoring electrode pad from external static electrification, so, just do not worry taking place the damage of quartz crystal.
Brief description of drawings
Fig. 1 relates to the side view of a part of section of long limit one side of the crystal oscillator of the 1st embodiment of the present invention.
Fig. 2 is the side view of minor face one side of crystal oscillator shown in Figure 1.
Fig. 3 is that crystal oscillator shown in Figure 1 is omitting the plane graph behind the crown cap.
Fig. 4 is that crystal oscillator shown in Figure 1 is omitting the ground plan behind the sealing resin.
Fig. 5 is the ground plan of crystal oscillator after having omitted the IC integrated circuit chip shown in Figure 1.
Fig. 6 relates to the side view of a part of section of long limit one side of the crystal oscillator of the 2nd embodiment of the present invention.
Embodiment
Fig. 1 relates to the side view of a part of section of long limit one side of the crystal oscillator of the 1st embodiment of the present invention, Fig. 2 is the side view of minor face one side, Fig. 3 has omitted the plane graph behind the crown cap, Fig. 4 has omitted the plane graph behind the sealing resin, and Fig. 5 is the ground plan that has omitted behind the IC integrated circuit chip.
Present embodiment is an example with a kind of crystal oscillator that possesses the control circuit that the temperature compensation function that carries out steady quartz crystal temperature frequency characteristic is arranged, and crystal oscillator of the present invention is described.
Crystal oscillator of the present invention, mainly comprise, above (hereinafter referred to as the surface) for smooth (hereinafter referred to as the bottom surface) in its lower section side formed container 1, the rectangle of the approximate rectangular shape of resettlement section 1B under the spill quartz crystal 5, constitute IC integrated circuit chip 8, crown cap 2 and the potting resin 7 of control circuit.
Place, at least four angles below container 1 is formed with external electrode terminals 9 separately respectively.And, in the side of container 1, also be formed with a plurality of control terminal electrodes 6, so that write IC integrated circuit chip 8 needed temperature compensation datas or the various information that are used to control etc.This control terminal electrode 6 can be avoided the superiors and undermost ceramic insulating layer, falls in, for example has on the position of semicircular cylinder shape and be formed on from the side of container 1, and be connected with the appointment terminal of IC integrated circuit chip 8.This control terminal electrode 6 is will utilize in manufacturing process, is used to write IC integrated circuit chip 8 needed temperature compensation datas and various control information, after being encapsulated into wiring substrate etc., can also prevent from the contact of outside or short circuit etc.
On the surface of container 1, i.e. the surface of partitions, the sealing that formation can surround its periphery is with electrically conductive film 31, and in this sealing with welding upper sealing ring 3 on electrically conductive film 31.And, parallelly in the wherein end near long limit of the sealing ring 3 on container 1 surface be provided with a pair of quartz crystal usefulness electrode pads 51,51 that is connected with quartz crystal 5 of being used for.And, with on the electrode pads 51,51, the connection projected electrode for formation appointed interval below quartz crystal 5 can also be set as required at above-mentioned quartz crystal.Also can form a maintenance projected electrode that supports the other end of quartz crystal 5 in the other end near long limit on container 1 surface.
In addition, on the ceramic insulating layer of rectangle, be formed with the conductor (not expression among the figure) of two crooked hole shapes that are connected with electrode pads 51,51 with quartz crystal, and guide down the dress receipts bottom surface of resettlement section 1B into.And the conductor of this crooked hole shape can be finished the position change on plane by internal wiring configuration (not having among the figure to show) between the layer and layer of the rectangular ceramic insulating barrier of plural number.That is to say, even quartz crystal also is fine with the position of electrode pads 51,51 is different with the extraction location of following resettlement section 1B.
Below the rectangular ceramic insulating barrier, just on the bottom surface of following resettlement section 1B, also be formed with wiring Figure 21 (comprising the IC electrode pads) of connecting IC integrated circuit chip 8, quartz crystal monitoring electrode pad 10,10 etc.And quartz crystal is with electrode pads 51,51, and by the conductor of crooked hole shape and the wiring configuration of appointment, with the conducting of IC electrode pads, wherein this IC electrode pads is to be connected with the input electrode of the oscillator signal of IC integrated circuit chip 8.And, also be connected with monitoring electrode pad 10,10 on the bottom surface that is formed on down resettlement section 1B respectively.
Further, if look squarely container 1, can see on four angles, along the notch 16 to 19 that is formed with on the thickness direction of container 1 such as columniform 1/4.This notch 16 to 19 is in order to prevent when conveyance and the container 1 hand-manipulated owing to broken and crackle etc. take place the impact from the outside.
In crystal oscillator of the present invention, quartz crystal 5 is configured in the above-mentioned resettlement section 1A of going up of the container 1 that is similar to rectangular shape.And, also disposed the IC integrated circuit chip 8 that is integrated with control circuit and frequency dividing circuit etc. at following resettlement section 1B.Then, will go up resettlement section 1A by seam weldering sealing ring 3 on crown cap 2 and seal, and, potting resin 7 is filled into down in the 1B of resettlement section, be received in wherein IC integrated circuit chip 8 so that cover by dress.
In crystal oscillator of the present invention, dress is received the following resettlement section 1B of IC integrated circuit chip 8, on the position on the mutual opposite of opening, outwards is formed with 4 extensions 11 to 14 highlightedly, constitutes a kind of shape of approximate cross.Promptly in 4 zones between each external electrode terminals 9 of 4 angles place's formation below container 1, be formed with the 1st extension 11,13 therein on the position on one group mutual opposite, be formed with the 2nd extension 12,14 and organize at remaining another on the direction that the 1st extension 11,13 is vertical therewith on the position on mutual opposite.And, again the line of connection the 1st extension 11,13 among the following resettlement section 1B and the cross section of the line that is connected the 2nd extension 12,14 are called central portion 15.
A pair of monitoring electrode pad 10,10 is configured in the bottom surface of the 1st extension 11,13 on described a pair of mutual opposite.And IC integrated circuit chip 8 strides across another the 2nd extension 12,14 to mutual opposite through central portion 15 and is assembled in down in the 1B of resettlement section.Adopt such mechanism, even the criss-cross resettlement section 1B down of 4 extensions 11 to 14 is arranged, there is not useless space owing to the existence of the 1st extension 11,13 and the 2nd extension 12,14, so, just the wasted space below the container 1 can be reduced to minimum, thereby can realize the miniaturization of container 1.In addition, external terminal electrode 9 is configured in opening and is made on the dead band of 1B periphery, following resettlement section of cross shape.Constitute a kind of approximate criss-cross
Crystal oscillator of the present invention is from the quartz crystal assembly process, carries out according to the order of potting resins such as IC assembly process, injection counterdie resin and sealing resin, hardening process, through depositing the last operation of data in to IC and being finished.
About the quartz crystal assembly process, at first be the ceramic vessel that to prepare said vesse 1.On this container, form various electrode pads, wiring diagram, electrically conductive film, also connect sealing ring 3 then at a surperficial face down bonding.Just, at the upper surface of container 1, disposed because of last resettlement section 1A that the quartz crystal assembling usefulness that sealing ring 3 forms is set and the following resettlement section 1B that below container 1, has disposed the cross shape of dress receipts IC integrated circuit chip 8.And, also can replace sealing ring 3, below welding, there is the cover of the same shape of bowl of opening to constitute upward resettlement section 1A.
Then, quartz crystal assembling on the quartz crystal on container 1 surface assembling usefulness in the 1A of resettlement section is with on the pad 51,51, the electroconductive resin glue that becomes conductivity adhering part 4 because of sclerosis is provided, disposes quartz crystal 5 again and make the extraction electrode of quartz crystal 5 can just in time be connected on the quartz crystal assembling of this electroconductive resin glue with on the pad 51,51.So,, just quartz crystal 5 can be fixed in the 1A of resettlement section by this electroconductive resin glue that hardens.
Secondly, the frequency of quartz crystal 5 is adjusted.Concrete method is, following resettlement section 1B below container 1, to have measure oscillating circuit measuring probe respectively be arranged on extension 11,13 on monitoring electrode pad 10,10 be connected, quartz crystal 5 is vibrated, measure frequency of oscillation on one side, adjust the frequency of oscillation of quartz crystal 5 on one side, carry out heat ageing then and handle.The frequency of oscillation of this quartz crystal 5 is exciting electrode evaporation Ag or the method for Au or the methods of cutting down exciting electrode with ion beam by making quartz crystal 5, to increase in fact or to reduce the weight of exciting electrode and obtain to adjust.
After this, crown cap 2 seam is welded on the sealing ring 3 seals.At this moment, by the N that in last resettlement section 1A, packs into
2Or gas such as He, making in the 1A of resettlement section becomes vacuum.
Then, determine IC integrated circuit chip 8 is striden across extension 12,14 and central portion 15, be configured in down the position in the 1B of resettlement section.Concrete method is, makes each Ag that is formed on the IC integrated circuit chip 8 or Au projected electrode and each IC electrode pads be in the state that matches, and determines the position of configuration IC integrated circuit chip 8.Then, by with the contacting or hyperacoustic weld etc. of Ag coating, make each Au projected electrode and each IC electrode pads connect mutually.
In the installation procedure of this IC integrated circuit chip 8, if IC integrated circuit chip 8 hand-manipulated (situation of clamping IC integrated circuit chip 8), then allow the tip of clamping device just in time be positioned at the position of extension 11,13.Because the tip of clamping device can be inserted into extension 11,13, just can simply IC integrated circuit chip 8 be encapsulated into down in the 1B of resettlement section.
In the installation procedure of this IC integrated circuit chip 8,, then need to allow the size that attracts nozzle be slightly larger than the size of IC integrated circuit chip 8 if when the top mode that holds with air of IC integrated circuit chip 8 attracted to install.Like this, even attract the part of nozzle to go beyond the scope,, therefore can enlarge and to carry out the appearance scope of being permitted that air attracts reliably because can adjust to this off-limits part and the criss-cross relative position of the extension of resettlement section 1B down.
Below, the injection hardening process that just be injected into down counterdie resin on the encapsulating face of the IC integrated circuit chip 8 in the 1B of resettlement section, covers the potting resins such as sealing resin 7 of IC integrated circuit chip 8 peripheries describes.
At first, by the tip with the dispenser of counterdie resin be inserted into IC integrated circuit chip 8 around the wideest extension 11,13 in space one of them, in for example extension 11, carry out the injection of counterdie resin.Like this, extension 13 pulls out pore and brings into play its effect with regard to can be used as one, and, because the bottom central part at following resettlement section 1B does not have such in the past meeting to hinder the monitoring electrode pad 10,10 that potting resin flows, so, just the delay of air can be do not produced, thereby the counterdie resin can be injected reliably in the gap between the bottom surface of IC integrated circuit chip 8 and following resettlement section 1B.In addition, if utilize extension 13 as injection portion, extension 11 is just brought into play its effect as pulling out pore.
Secondly, allow the tip of dispenser of sealing resin be positioned at for example opposite of the encapsulating face of IC integrated circuit chip 8, inject sealing resin in the 1B of resettlement section downwards again.In following resettlement section 1B, inject after counterdie resin and the sealing resin, heat again, hardening of resin is handled.Like this, in the packaging area of the IC integrated circuit chip 8 in following resettlement section 1B, just injected potting resin.
Below the operation of data being write into IC integrated circuit chip 8 is described.For the product of having finished above-mentioned operation, before this according to the oscillating characteristic (frequency-temperature characteristic) of measuring the quartz crystal 5 that comes out with monitoring electrode pad 10,10, can be used to this frequency-temperature characteristic is carried out the optimal data that temperature-compensating makes it tranquilization from control terminal electrode 6 inputs of container 1 side.Product of the present invention is finished to this as an example of production process.
Then, the IC integrated circuit chip 8 that just is configured in down in the 1B of resettlement section describes.
Above-mentioned IC integrated circuit chip 8 for example can be to be used for the quartz crystal 5 with intrinsic temperature frequency characteristic that three-dimensional curve represents controlled making its vibration, so that the frequency variation of environment temperature reduces relatively.Specifically, IC integrated circuit chip 8 is by well-known PN doping, SI semi-insulation oxidation processes etc., and integrated several functions constitute on silicon substrate.For example, IC integrated circuit chip 8 removes and comprises oscillating converter, load capacity composition and the feedback impedance that constitutes oscillating circuit, also comprise memory cell, the detection environment temperature of the necessary temperature compensation data of intrinsic temperature frequency characteristic that saves as steady quartz crystal 5 temperature sense transducer, variable capacitance diode, according to the temperature compensation data of appointment convert the DA converting unit that given voltage offers variable capacitance diode to, the signal that will deposit in into from the outside is saved in the AD converting unit of memory cell and the information process unit of controlling these cell operation.
In the middle of this IC integrated circuit chip 8, have such as, provide quartzy splicing ear that the VCC terminal of supply voltage, the GND terminal that becomes earthing potential, German diamond oscillator 5 connect, outputting oscillation signal the OUT terminal, can adjust VCON terminal from the frequency of outside, 4 data being used to deposit in offset data deposit control terminal or the like in.
Be configured in down the VCC terminal (power supply unit) of the IC integrated circuit chip 8 in the 1B of resettlement section, be connected with one of them of external terminal electrode 9 between IC electrode pads, wiring diagram.OUT terminal, GND terminal, VCON terminal are connected with one of them of external terminal electrode 9 respectively too.And, 2 extraction electrodes of quartz crystal 5, the conductor by above-mentioned crooked hole shape is connected with IC electrode pads, wiring diagram and the monitoring electrode pad 10,10 of appointment.Further, 4 data deposit control terminal electrode 6 in, by wiring diagram, IC electrode pads and with 8 conductings of IC integrated circuit chip.
The OUT terminal of the VCC terminal of these IC integrated circuit chips 8, the GND terminal of earthing potential, the quartzy splicing ear that is connected with quartz crystal 5, the output of vibrating and can adjust VCON terminal from the frequency of outside, for example, can be to form by the aluminium electrode on the encapsulating face of the following resettlement section 1B that is attached to IC integrated circuit chip 8.Owing on the aluminium electrode, be formed with projected electrodes such as gold or solder flux in advance, so, by adopting ultrasonic wave to fill associated methods such as (filler), above-mentioned assigned I C electrode pads can more relatively easily be connected or connect in conjunction with (bonging) or conductivity.
In addition, also can be (for example in non-encapsulating face one side of IC integrated circuit chip 8, the face relative) form the aluminium electrode with the encapsulating face of following resettlement section 1B, for example, can be connected with the IC electrode pads of appointment by joint line (bonding wire), but will note not making down the shape of resettlement section 1B to become big.
Just write into the only data of IC integrated circuit chip 8, in order to make crystal oscillator can carry out the work of appointment, temperature frequency characteristic according to 3 functions adjusting the quartz crystal 5 that operation is predetermined by frequency, utilize control terminal electrode 6 that temperature compensation data is input to the memory cell of IC integrated circuit chip 8, and temperature compensation data is in order to carry out tranquilization to this temperature frequency characteristic in comprising the bigger temperature range of normal temperature.And, as required, also can carry out the affirmation of work, and then deposit the offset data after remodifying in by the offset data that has deposited in.
Temperature-compensating work as shown below, is performed such.For example, in Fig. 1, at first, each numerical value of the raw parameter of 3 functions (temperature compensation data) by will being used for 3 temperature frequency characteristics of planarization, for example α, β, γ, Ti is input to PROM or the RAM as the memory cell of IC integrated circuit chip 8, according to these data, make the voltage of 3 function generating circuit generations for 3 function characteristics of temperature.The exterior ambient temperatures of this moment can be obtained by the temperature-sensitive method of using the temperature sensor in the IC integrated circuit chip 8.The voltage of its 3 function characteristics is applied on the variable capacitance diode in the identical IC integrated circuit chip 8, produces the electrostatic capacitance for 3 function characteristics of temperature.
That is to say, oscillating circuit in the IC integrated circuit chip 8 vibrates with the quartz crystal 5 that is connected the outside, the electric capacity of the variable capacitance diode that produces with respect to the variation of standard frequency and, offset data according to the frequency of oscillation of the quartz crystal assigned temperature under 5 by coupling, the intrinsic temperature frequency characteristic that quartz crystal 5 is had obtains tranquilization in comprising the bigger temperature range of normal temperature.This IC integrated circuit chip 8 promptly can be flip-chip (flip chip), also can be CSP (chipsize package).
And, at IC integrated circuit chip 8 is under the situation of flip-chip, as potting resin 7, be used as the counterdie resin of encapsulating face one side that is injected into down the IC integrated circuit chip 8 in the 1B of resettlement section and the sealing resin of covering IC integrated circuit chip 8 etc., and when IC integrated circuit chip 8 is CSP, only use the counterdie resin also passable.
Below the rectangle of container 1, the place, 4 angles around the following resettlement section 1B is also surplus plane domain, and external terminal electrode 9 is configured on this plane domain.For this reason, the size that need not reduce external terminal electrode 9 just can form this terminal electrode 9, owing to do not existed fully in useless clear area, the bottom surface of container, and just can become very little of the package area on the wiring substrate.
And, because monitoring electrode pad 10,10 is separated to be respectively formed on a pair of extension 11,13 on mutual opposite of following resettlement section 1B of cross shape, so, distance between the monitoring electrode pad 10,10 will increase, thus, can reduce the stray capacitance that between monitoring electrode pad 10,10, produces widely.Like this, just can under stable state, the intrinsic temperature characteristic of quartz crystal 5 be measured accurately.And because the stray capacitance that produces is reduced, so can not produce harmful effect to the mensuration of quartz crystal characteristic even container 1 is miniaturized also, its result has promoted the progress of miniaturization of crystal oscillator.
Fig. 6 is the cut-away section side view of the related crystal oscillator of the 2nd embodiment of the present invention, and is corresponding with Fig. 1 of the cut-away section side view of the crystal oscillator of the 1st embodiment.The crystal oscillator of the 2nd embodiment, just on the structure of the IC integrated circuit chip of control quartz crystal vibration and different on the notes type structure of its corresponding potting resin, other structure all be with Fig. 2 to the crystal oscillator of the 1st embodiment shown in Figure 5 related structure the same.And, the assembling procedure of the crystal oscillator of the 2nd embodiment, also the assembling procedure with the crystal oscillator of the 1st embodiment is identical.
Therefore,, enclose same dash number, and omit the explanation of its detail for the structural element same with the crystal oscillator of the 1st embodiment.Below, just the place with the crystal oscillator that is different from the 1st embodiment is that explanation is launched at the center.
That is, in the crystal oscillator of the 2nd embodiment shown in Figure 6, be configured in down IC integrated circuit chip 8 in the 1B of resettlement section ', though structurally be different from the employed IC integrated circuit chip 8 of the crystal oscillator of the 1st embodiment, have same function arranged.
The crystal oscillator of this 2nd embodiment has the following resettlement section 1B of the approximate cross shape that opening is arranged below, is formed with external terminal electrode 9 in the around openings of resettlement section 1B down; On the container that be similar to rectangular shape 1 identical, be coated with insulating barrier 83 with the surface on the mutual opposite of encapsulating face of following resettlement section 1B (that is the face that exposes from the opening of resettlement section 1B down) with the container of the crystal oscillator of the 1st embodiment; Being coated with the IC integrated circuit chip 8 of insulating barrier 83 ' engage by flip-chip, be configured to down in the 1B of resettlement section, and IC integrated circuit chip 8 ' and the bottom surface of following resettlement section 1B between filling counterdie resin 71.
Promptly, this IC integrated circuit chip 8 ' be flip-chip type, for being engaged, flip-chip becomes possibility, encapsulating face one side at the following resettlement section 1B of silicon substrate, possess the plurality of electrodes pad identical with IC integrated circuit chip 8 arranged, for example, provide the VCC terminal of supply voltage, the GND terminal that becomes earthing potential, the quartzy splicing ear that is connected with quartz crystal 5, outputting oscillation signal the OUT terminal, can adjust VCON terminal from the frequency of outside, for example 4 data of being used to write offset data write control terminal or the like.
And same with IC integrated circuit chip 8, this IC integrated circuit chip 8 ' be is used for the quartz crystal 5 that for example has the intrinsic temperature frequency characteristic of representing with three-dimensional curve is controlled vibration, so that the frequency variation of environment temperature becomes smooth relatively.Specifically, be exactly by well-known PN diffusion, SI semi-insulation oxidation processes etc., integrated several functions constitute on silicon substrate.For example, IC integrated circuit chip 8 ' remove comprises oscillating converter, load capacity composition and the feedback impedance that constitutes oscillating circuit, also comprise memory cell, the detection environment temperature of the necessary temperature compensation data of intrinsic temperature frequency characteristic that saves as steady quartz crystal 5 temperature sense transducer, variable capacitance diode, according to the temperature compensation data of appointment convert the DA converting unit that given voltage offers variable capacitance diode to, the signal that will deposit in into from the outside is saved in the AD converting unit of memory cell and the information process unit of controlling these cell operation.
And, this IC integrated circuit chip 8 ', on the encapsulating face of its integrated circuit chip main body 80, formed aluminium electrode 81 as the electrode pads that constitutes each terminal such as above-mentioned VCC terminal, and, on this aluminium electrode 81, be formed with the scolding tin projected electrode 82 of gold etc., by adopting the welding of ultrasonic bonding or conductivity pad etc., can make IC integrated circuit chip 8 ' connected (flip chipbonding) on the above-mentioned assigned I C electrode pads in the resettlement section 1B down by flip-chip.
Be configured in down the IC integrated circuit chip 8 of resettlement section 1B ' VCC terminal (power supply unit), by IC electrode pads, wiring diagram and be connected with one of them of external terminal electrode 9.Equally, OUT terminal, GND terminal, VCON terminal also are connected with one of them of external terminal electrode 9 respectively.And 2 extraction electrodes of quartz crystal 5 by the conductor of above-mentioned crooked hole shape, are connected with IC electrode pads, wiring diagram and the monitoring electrode pad 10,10 of appointment.Further, 4 data write the control terminal electrode, by wiring diagram, IC electrode pads and the 8 ' conducting of IC integrated circuit chip.
Cover above-mentioned IC integrated circuit chip 8 ' on insulating barrier 83, be be coated over constitute IC integrated circuit chip 8 ' integrated circuit chip main body 80 lip-deep, constitute by resin such as passivation glass film such as silicon oxide layer or nitride film or polyimides.The thickness of this insulating barrier 83 can be set in the scope of 2 to 10 μ m for example, for example about 5 μ m.
At insulating barrier 83 is silicon oxide layer or nitride film, and IC integrated circuit chip 8 ' when being silicon substrate (silicon wafer) is by carrying out oxidation processes or nitrogen treatment forms this insulating barrier 83 on the interarea of being used as the surface.And be under the situation of resin such as polyimides at insulating barrier 83, can cover by method of spin coating (spin coating) and form this insulating barrier 83.Owing to be provided with this insulating barrier 83, though IC integrated circuit chip 8 ' and the wiring diagram of external terminal electrode 9 or wiring substrate between have the solder flux single crystal ingot, can not cause short circuit yet.This is because integrated circuit chip main body 80 is own, is in the cause of earthing potential or VCC current potential usually.
Above-mentioned IC integrated circuit chip 8 ' and the bottom surface of following resettlement section 1B between the injection of the counterdie resin 71 of filling or sclerosis etc., can carry out according to following operation.That is, with the injection dispenser tip of counterdie resin 71, be inserted into IC integrated circuit chip 8 ' around the wideest extension 11,13 (for example, the width in its space is 500 to 800 μ m) in space one of them, in for example extension 11, carry out the injection of resin.
Like this, if extension 11 uses as injection portion, so, extension 13 pulls out pore and brings into play its effect with regard to can be used as one, and, because not have the monitoring electrode pad 10,10 of such in the past meeting obstruction resin flows in the following bottom central part of resettlement section 1B, so, just not can IC integrated circuit chip 8 ' and the bottom surface of following resettlement section 1B between the delay of gap generation air, thereby can inject the counterdie resin reliably.Stable like this injection reliably after the counterdie resin 71 carried out the heat hardening of resin again and handled.In addition, also can use extension 13 as injection portion, at this moment extension 11 is just brought into play its effect as pulling out pore.
In the crystal oscillator of this 2nd embodiment, even because IC integrated circuit chip 8 ' flip-chip, also be provided with insulating barrier 83 from the teeth outwards, so, the employed sealing resin that is used to cover IC integrated circuit chip 8 in the crystal oscillator of the 1st embodiment, IC integrated circuit chip 8 ' the periphery just do not needed.
The crystal oscillator of the 2nd embodiment of the present invention adopts aforesaid structure, can obtain the action effect same with the crystal oscillator of the 1st embodiment, also can simplify its production process.And, owing to do not need sealing resin, help again to reduce cost.
As mentioned above, crystal oscillator of the present invention, comprise that configuration has the quartz crystal of a top side of container of approximate rectangular shape of the following resettlement section of an opening in its lower section, be assemblied in the IC integrated circuit chip of the oscillation action that is used to control described quartz crystal in the described down resettlement section, be injected into the potting resin of the packaging area of IC integrated circuit chip in the described resettlement section down, be formed on four angles below the described container and the external terminal electrode that is connected with described IC integrated circuit chip, wherein said resettlement section down, on the position on the mutual opposite between each external terminal electrode that the place, four angles below described container forms, have two pairs of outstanding extensions, be a kind of shape that is similar to cross; In described two pairs of extensions wherein mutually on the bottom surface of a pair of extension on opposite, be provided with the monitoring electrode pad of the oscillating characteristic that is used for monitoring described quartz crystal.
According to this structure, owing to be used for measuring on the bottom surface of a pair of extension that the monitoring electrode pad of the intrinsic temperature characteristic of quartz crystal is configured in mutual opposite, so, spacing between the monitoring electrode pad can be elongated, and the stray capacitance that produces between the monitoring electrode pad also can be controlled effectively.Therefore,, also can under stable state, measure the intrinsic temperature characteristic of quartz crystal even be miniaturized at crystal oscillator, thus can be so that high-precision mensuration becomes possibility.
And when the packaging area of the IC of resettlement section integrated circuit chip injects potting resin, if inject resin from one of them extension of a pair of extension that is provided with the monitoring electrode pad, another extension then plays an effect of pulling out pore.And, because the bottom central part in the resettlement section does not have the monitoring electrode pad, so, just the delay of air can be do not produced, thereby resin can be injected reliably in the gap between the bottom surface of IC integrated circuit chip and resettlement section.
And, because the extension of resettlement section is formed between the external terminal electrode, just do not need shape to external terminal electrode to change or it is diminished, so can maintain the installation strength on the outside wiring substrate like this.
And, be formed in the bottom surface of extension owing to be used for measuring the monitoring electrode pad of the intrinsic temperature characteristic of quartz crystal, and be not exposed at the periphery of container, therefore also can not append on the monitoring electrode pad from external static electrification, so, just do not worry taking place the damage of quartz crystal.
The present invention also can be resettlement section in the formation on described container, and described quartz crystal is incorporated on this in resettlement section with the state of sealing.
According to this structure, because being state with hermetic seal, quartz crystal is received in the resettlement section by dress, so quartz crystal can not be subjected to the pollution of peripheral environment, thereby can obtain frequency of oscillation steady in a long-term, thereby the prestige of crystal oscillator is improved.
The present invention also can be described IC integrated circuit chip, stride across in described two pairs of extensions wherein mutually the opposite remaining another to extension, be assembled in the described resettlement section down.
According to this structure and since the IC integrated circuit chip be configured to stride across do not form the monitoring electrode pad remaining another between the extension, this just makes the resettlement section the dead sector can not occur, thus promoted crystal oscillator miniaturization.
The present invention also can be as above-mentioned potting resin, the counterdie resin is filled in dress and receives the bottom surface, resettlement section of IC integrated circuit chip and the gap between this IC integrated circuit chip, can be again to fill the sealing resin that covers IC integrated circuit chip periphery in this resettlement section.
According to this structure, owing to the counterdie resin is filled between bottom surface, resettlement section and the IC integrated circuit chip, thereby then can be absorbed, thereby can under stable state, the IC integrated circuit chip be encapsulated in the resettlement section by the stress that thermal expansion produces.And, owing to filled the sealing resin that covers IC integrated circuit chip periphery, make the performance of outside voltage-resistent characteristic become better.
The present invention can also adopt and make above-mentioned IC integrated circuit chip is a kind of integrated circuit chip that carries out the flip-chip type of flip-chip joint in the resettlement section, and is formed with insulating barrier on the aspectant surface of encapsulation of the following resettlement section of adorning integrated circuit chip in fact; Described potting resin is filled between the bottom surface and the encapsulating face of integrated circuit chip in described resettlement section down of described resettlement section down as the counterdie resin.
According to this structure, because the counterdie resin is filled between bottom surface, resettlement section and the IC integrated circuit chip, the stress that is produced by thermal expansion just is absorbed, and this just can be encapsulated in the resettlement section with the IC integrated circuit chip under stable status.And, because
Integrated circuit chipBe formed with insulator on the surface on the mutual opposite of encapsulating face of the resettlement section of main body, make the performance of outside voltage-resistent characteristic become better.Because can simplify its production process, simultaneously, also do not need sealing resin again, this just helps to reduce Costco Wholesale.
Because crystal oscillator of the present invention, the following resettlement section of its container is a kind of shape of approximate cross, this cross has two pairs of extensions, towards stretching out facing to the position of face mutually between each external terminal electrode of 4 angles place's formation below container, in these two pairs of extensions wherein mutually on the bottom surface of a pair of extension on opposite, be formed with the monitoring electrode pad of the oscillating characteristic that is used for measuring above-mentioned quartz crystal.Therefore, even under the situation that crystal oscillator has been miniaturized, also can under stable state, measure the intrinsic temperature frequency characteristic that is configured in the quartz crystal on the container, can inject potting resin reliably to the encapsulation region of IC integrated circuit chip again, and, also can guarantee the installation strength on the wiring substrate externally.
Claims (5)
1. crystal oscillator, comprise: configuration have in its lower section an opening following resettlement section approximate rectangular shape container a top side quartz crystal, be assemblied in the oscillation action that is used to control described quartz crystal in the described down resettlement section the IC integrated circuit chip, be injected into the packaging area of IC integrated circuit chip in the described resettlement section down potting resin, be formed on four angles below the described container and the external terminal electrode that is connected with described IC integrated circuit chip, it is characterized in that:
Described resettlement section down on the position on the mutual opposite between each external terminal electrode that the place, four angles below described container forms, has two pairs of outstanding extensions, is a kind of shape that is similar to cross;
In described two pairs of extensions wherein mutually on the bottom surface of a pair of extension on opposite, be provided with the monitoring electrode pad of the oscillating characteristic that is used for monitoring described quartz crystal.
2. crystal oscillator as claimed in claim 1 is characterized in that: resettlement section in the formation on described container, described quartz crystal is incorporated on this in resettlement section with the state of sealing.
3. crystal oscillator as claimed in claim 1 is characterized in that: described IC integrated circuit chip, stride across in described two pairs of extensions wherein mutually the opposite remaining another to extension, be assembled in the described resettlement section down.
4. as one of them described crystal oscillator of claim 1 to 3, it is characterized in that described potting resin comprises:
Filling the counterdie resin in the bottom surface of the described down resettlement section of taking in the IC integrated circuit chip and the space between the described IC integrated circuit chip and
Filling and covering are positioned at the described sealing resin of the IC integrated circuit chip periphery of resettlement section down.
5. as one of them described crystal oscillator of claim 1 to 3, it is characterized in that:
Described IC integrated circuit chip is a kind of flip-chip type integrated circuit chip that is carrying out the flip-chip joint in following resettlement section;
On the aspectant surface of encapsulation of the following resettlement section of integrated circuit chip, be formed with insulating barrier;
Described potting resin is filled between the bottom surface and the encapsulating face of integrated circuit chip in described resettlement section down of described resettlement section down as the counterdie resin.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001362182A JP2003163296A (en) | 2001-11-28 | 2001-11-28 | Surface-mounting electronic component |
| JP2001362182 | 2001-11-28 | ||
| JP2001362181 | 2001-11-28 | ||
| JP2001362181A JP3754913B2 (en) | 2001-11-28 | 2001-11-28 | Surface mount crystal oscillator |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100740637A Division CN100495906C (en) | 2001-11-28 | 2002-11-28 | Surface-mounted crystal oscillator production method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1428929A CN1428929A (en) | 2003-07-09 |
| CN1256802C true CN1256802C (en) | 2006-05-17 |
Family
ID=26624730
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02154805 Expired - Fee Related CN1256802C (en) | 2001-11-28 | 2002-11-28 | Crystal oscillator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1256802C (en) |
-
2002
- 2002-11-28 CN CN 02154805 patent/CN1256802C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1428929A (en) | 2003-07-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100495906C (en) | Surface-mounted crystal oscillator production method | |
| CN1197236C (en) | Piezoelectric device | |
| KR100839248B1 (en) | Piezo-oscillator and manufacturing method thereof | |
| KR101460401B1 (en) | Module and method of manufacturing a module | |
| US7576476B2 (en) | Piezoelectric device and method for manufacturing the same | |
| CN1577841A (en) | Stacked chip semiconductor device and method for manufacturing the same | |
| US20080266003A1 (en) | Surface-mounted piezoelectric oscillators and piezoelectric vibrators | |
| CN1557049A (en) | Piezoelectric component and method for manufacturing the same | |
| JP5046770B2 (en) | Piezoelectric parts | |
| CN1256802C (en) | Crystal oscillator | |
| JP2004297620A (en) | Surface mount temperature compensation crystal oscillator | |
| JP4273910B2 (en) | Surface-mount type piezoelectric oscillator and manufacturing method thereof | |
| KR20180055369A (en) | SAW device package and manufacturing method thereof | |
| KR100501194B1 (en) | crystal oscillator | |
| KR101917716B1 (en) | Module and production method | |
| JP2010219876A (en) | Piezoelectric device | |
| KR101349544B1 (en) | High frequency module | |
| US20230155568A1 (en) | Vibrator device | |
| CN1251398C (en) | Temp.-compensation type crystal oscillator | |
| US20230155567A1 (en) | Vibrator device | |
| JPH10163798A (en) | Surface acoustic wave element and electronic part using the same | |
| JP2011101213A (en) | Vibration device | |
| JP4055521B2 (en) | Component mounting structure | |
| JP2006041312A (en) | Substrate for sealing multi-pattern electronic component, electronic device and manufacturing method therefor | |
| TWI406382B (en) | Welded - type vibrator device wafer - level package structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20060517 Termination date: 20201128 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |