CN1248297C - Method for preparing carbon nitride/carbon nano tube field effect transistor with nano junction - Google Patents
Method for preparing carbon nitride/carbon nano tube field effect transistor with nano junction Download PDFInfo
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- CN1248297C CN1248297C CN 03108244 CN03108244A CN1248297C CN 1248297 C CN1248297 C CN 1248297C CN 03108244 CN03108244 CN 03108244 CN 03108244 A CN03108244 A CN 03108244A CN 1248297 C CN1248297 C CN 1248297C
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Abstract
The present invention relates to the nanotechnology of transistors, particularly to a method for preparing a field effect transistor of a carbon nitride/carbon nanotube with nano junction. The method comprises following steps: firstly, an array of a Ti/Au electrode couple is prepared on the surface of silicon dioxide of the thermal oxidation by the photoetching technique; secondly, the prepared carbon nitride/carbon nanotubes are dispersed in solution of phenixin and dichloro-benzene, and a drop of suspending liquid of a carbon bearing tube is dropped on a silicon dioxide base with the electrode couple; thirdly, after volatilized completely, solvent is put into a vacuum chamber of an IDSP2X focused ion beam (FIB) system, a carbon tube on a substrate is observed by using FIB current, and then a Pt electrode lead wire deposited in situ on both ends of the single carbon tube is connected with a Ti/Au electrode; fourthly, the field effect performance of the product is detected, and the field effect transistor of the carbon nitride/carbon nanotube with the nano junction is obtained. The method of the present invention has the advantages of simple technology, low cost and little contact resistance.
Description
Technical field
The present invention relates to the transistor nanometer technology, particularly a kind of preparation method with carbonitride and carbon nanotube field-effect transistor of nano junction.
Background technology
Carbon nano-tube has become the specific function material and the device material that have potentiality of scientist's extensive concern owing to its unique electric property.Utilize the single wall nano carbon nano-tube to prepare different electronic devices and components at present with nano wire, as diode, room temperature field-effect transistor and phase inverter.(1:Derycke, V.; Martel, R.; Appenzeller, J.; Avouris, Ph.Nano.Lett.2001,1,453.2:Martel, R.; Schmidt, T.; Shea, H.R.; Hertel, T.; Avouris, Ph.Appl.Phys.Lett.1998,73,2447.3:Fuhrer, M.S.; Kim, B.M.; Durkop, T.; Brintlinger, T.Nano.Lett.2002,2,755.4:Choi, W. B.; Chu, J.U.; Jeong, K.S.; Bae, E.J.; Lee, J.W.; Kim, J.J.; Lee, J.O.Appl.Phys.Lett.2001,79,3696.) still, because the electronic property of multi-walled carbon nano-tubes complexity, up to the present utilize report that multi-walled carbon nano-tubes prepares field-effect transistor also seldom.Because the multi-walled carbon nano-tubes technology of preparing has had very big progress, can prepare the multi-walled carbon nano-tubes that difformity has different performance, as have multi-walled carbon nano-tubes (1:Papadopoulos, the C. of T shape and Y shape recently; Rkitin, A.; Li, J.; Vedeneev, A.S.; Xu, J.M.Phys.Rev.Lett.2000,85,3476.2:Perez-Garrido, A.; Urbina, A.Carbon 2002,40, and 1227).Similar to the inorganic silicon device, also can utilize the method for doping in the graphite network of carbon nano-tube, to introduce and give electronics such as nitrogen or be subjected to electronic elements such as boron, can effectively control the Electronic Performance of nanotube.
Summary of the invention
The purpose of this invention is to provide and a kind ofly utilize the multi-walled carbon nano-tubes technology of preparing and a kind ofly have nano junction carbonitride and carbon nano-tube, prepare the method for room temperature field-effect transistor nano-device as semi-conducting material.
Another object of the present invention is to utilize a kind ofly to have nano junction carbonitride and carbon nano-tube as semi-conducting material, has prepared a kind of room temperature field-effect transistor nano-device.Utilize the Focused Ion Beam photoetching technique to observe directly carbon nano tube and at single-root carbon nano-tube two ends in-situ deposition Pt electrode as source, drain electrode.At room temperature this material has good field effect behavior, and its mobility and on-off ratio are very high, can compare favourably with the silicon electronic device.
For achieving the above object, technical solution of the present invention provides a kind of the have carbonitride of nano junction and the preparation method of carbon nanotube field-effect transistor, comprises the following steps:
The first step prepares Ti and Au electrode pair array at the silica surface of thermal oxidation with photoetching technique;
Second step was dispersed in the carbonitride and the carbon nano-tube of preparation in carbon tetrachloride and the dichlorobenzene solution then, with the hanging drop of a carbon nanotubes in the right silicon dioxide substrate of belt electrode;
The 3rd step, after treating that solvent evaporates fully, put into the vacuum chamber of IDS P2X focused ion beam (FIB) system, observe on-chip carbon nano-tube, link to each other with the Au electrode with Ti at the two ends of single-root carbon nano-tube in-situ deposition Pt contact conductor again with the focused ion beam electronic current.
The 4th step, product is carried out the detection of field effect behavior, obtain carbonitride and carbon nanotube junction field effect transistor.
The preparation method of described carbonitride and carbon nanotube junction field effect transistor, its described Ti and Au electrode pair array, its electrode width is 0.5～1.5 micron, is 5～10 microns to interelectrode distance.
The preparation method of described carbonitride and carbon nanotube junction field effect transistor, described focused ion beam electronic current are 2～6 skins peaces.
The preparation method of described carbonitride and carbon nanotube junction field effect transistor, its described carbon nano-tube diameter is 40～60 nanometers, length is 2～5 microns; The width of Pt contact conductor is between 300 nanometers～2 micron.
The preparation method of described carbonitride and carbon nanotube junction field effect transistor, the described detection of carrying out field effect behavior, being to utilize HP4140B semi-conductor test instrument and MP1008 probe station, is the scope interscan of 0-15V at source-drain voltage, thereby draws the output performance of device.
The preparation method of described carbonitride and carbon nanotube junction field effect transistor, its product is the n slot field-effect transistor.
Carbonitride of the present invention and carbon nanotube junction field effect transistor are the n slot field-effect transistors, and its electron mobility is up to 3.84 * 10
3Cm
2/ Vs.In addition, the on-off ratio of n channel device of the present invention is greater than 10
4And these performances all measure in air.
This carbonitride and the carbon nano-tube of the present invention's preparation, wherein half is a carbon nano-tube, second half is for the azotized carbon nano pipe of doping nitrogen, by this field-effect transistor with many walls nanotube preparation of nano junction in the molecule, method is simple, have good field effect behavior, do not see bibliographical information as yet.
The carbonitride and the carbon nanotube junction field effect transistor of the present invention's preparation have following feature and advantage:
1. the carbonitride and the carbon nanotube junction field effect transistor of the present invention's preparation have good field effect behavior, and very high electron mobility and on-off ratio are arranged, and stable performance in the air at room temperature is a kind of desirable molecular device.
2. the present invention's electrode of preparing nano-device has utilized the Focused Ion Beam photoetching technique, can observe directly the single nanotube that deposits in the substrate, and can be at the two ends of nanotube in-situ preparing electrode.Technology is simple, and contact resistance is little.
3. the carbonitride of the present invention's preparation and the utilization of carbon nanotube junction field effect transistor is many walls nanotube, and preparation technology is simple, and is with low cost.
Description of drawings
Fig. 1 is the transmission electron microscope picture of single carbonitride and carbon nano-tube;
Fig. 2 is the structural representation of carbonitride and carbon nanotube junction field effect transistor; 1, source electrode; 2, drain electrode; 3, carbonitride and carbon nano-tube; 4, silicon dioxide insulating layer; 5, silicon base;
Fig. 3 is the output characteristic curve of carbonitride and carbon nanotube junction field effect transistor;
Fig. 4 is the transfer characteristic curve of carbonitride and carbon nanotube junction field effect transistor;
Embodiment
The present invention is described in detail below in conjunction with drawings and Examples.But the present invention is not limited to this example.
The present invention prepares the method for carbonitride and carbon nanotube junction field effect transistor:
The first step is at the silicon dioxide (SiO of thermal oxidation
2, 500 nanometers) and 4 surfaces prepare Ti and Au electrode pair array with photoetching technique, and electrode width is 1 micron, is the 5-10 micron to interelectrode distance.
Second step, then the preparation carbonitride and carbon nano-tube (preparation method of carbonitride and carbon nano-tube sees also patent documentation, application number: 02160815.6) be dispersed in carbon tetrachloride and the dichlorobenzene solution, with the hanging drop of a carbon nanotubes in the right silicon dioxide substrate 5 of belt electrode.
The 3rd step, after treating that solvent evaporates fully, put into the vacuum chamber of IDS P2X focused ion beam (FIB) system, focused ion beam electronic current with 4 skins peace is observed on-chip carbon nano-tube 3, and as shown in Figure 1, diameter is 50 nanometers, length is 4 microns, and at the two ends of single-root carbon nano-tube 3 in-situ deposition Pt contact conductor, source electrode 1, drain electrode 2 links to each other with the Au electrode with Ti respectively.The width of Pt contact conductor is 2 microns.The device architecture schematic diagram, as shown in Figure 2.
The 4th step, product is carried out the detection of field effect behavior, to obtain qualified field-effect transistor, utilize probe station (Wentworht, MP1008) and the output characteristic curve (Fig. 3) of HP4141B semiconductor analysis tester measuring element and transfer characteristic curve (Fig. 4), source-drain voltage scans at 0-15V.The electron field effect mobility of measuring element is 3.84 * 10 in air
3Cm
2/ Vs, on-off ratio is greater than 10
4As shown in Figure 3, when grid voltage when+3 volts change to 0 volt, the electricity of carbonitride and carbon nano-tube is led progressively and is suppressed, and shows that this field-effect transistor is the n slot field-effect transistor.
Claims (6)
1, a kind of preparation method with carbonitride and carbon nanotube field-effect transistor of nano junction is characterized in that, comprises the following steps:
The first step prepares Ti and Au electrode pair array at the silica surface of thermal oxidation with photoetching technique;
Second step was dispersed in the carbonitride and the carbon nano-tube of preparation in carbon tetrachloride and the dichlorobenzene solution then, with the hanging drop of a carbon nanotubes in the right silicon dioxide substrate of belt electrode;
The 3rd step, treat that solvent evaporates fully after, put into the vacuum chamber of focused ion beam (FIB) system, observe on-chip carbon nano-tube with the focused ion beam electronic current, link to each other with the Au electrode with Ti at the two ends of single-root carbon nano-tube in-situ deposition Pt contact conductor again.
The 4th step, product is carried out the detection of field effect behavior, obtain carbonitride and carbon nanotube junction field effect transistor.
2, the preparation method of carbonitride as claimed in claim 1 and carbon nanotube junction field effect transistor is characterized in that, its described Ti and Au electrode pair array, and its electrode width is 0.5～1.5 micron, is 5～10 microns to interelectrode distance.
3, the preparation method of carbonitride as claimed in claim 1 and carbon nanotube junction field effect transistor is characterized in that, described focused ion beam electronic current is 2～6 skins peaces.
4, the preparation method of carbonitride as claimed in claim 1 and carbon nanotube junction field effect transistor is characterized in that, its described carbon nano-tube diameter is 40～60 nanometers, and length is 2～5 microns; The width of Pt contact conductor is between 300 nanometers～2 micron.
5, the preparation method of carbonitride as claimed in claim 1 and carbon nanotube junction field effect transistor, it is characterized in that, the described detection of carrying out field effect behavior, be to utilize semi-conductor test instrument and probe station, at source-drain voltage is the scope interscan of 0-15V, thereby draws the output performance of device.
6, the preparation method of carbonitride as claimed in claim 1 and carbon nanotube junction field effect transistor is characterized in that, its product is the n slot field-effect transistor.
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| CN 03108244 CN1248297C (en) | 2003-03-24 | 2003-03-24 | Method for preparing carbon nitride/carbon nano tube field effect transistor with nano junction |
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| CN 03108244 CN1248297C (en) | 2003-03-24 | 2003-03-24 | Method for preparing carbon nitride/carbon nano tube field effect transistor with nano junction |
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| CN1248297C true CN1248297C (en) | 2006-03-29 |
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| CN100437120C (en) * | 2004-11-17 | 2008-11-26 | 中国科学院物理研究所 | Testing electrode of single nanometer materials and production thereof |
| CN100375297C (en) * | 2004-12-27 | 2008-03-12 | 中国科学院化学研究所 | Light intensity adjustable field effect transistor and preparation method |
| CN101126735B (en) * | 2007-09-30 | 2010-06-23 | 董益阳 | Field effect transistor biosensor preparation method |
| CN100593842C (en) * | 2008-07-01 | 2010-03-10 | 上海大学 | Method for preparing nanocrystalline diamond film field-effect transistor |
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