CN1247906A - Technological process of preparing alloy film by using magnetically controlled sputtering target of different material - Google Patents
Technological process of preparing alloy film by using magnetically controlled sputtering target of different material Download PDFInfo
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- CN1247906A CN1247906A CN 98114306 CN98114306A CN1247906A CN 1247906 A CN1247906 A CN 1247906A CN 98114306 CN98114306 CN 98114306 CN 98114306 A CN98114306 A CN 98114306A CN 1247906 A CN1247906 A CN 1247906A
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Abstract
The present invention is technological process of preparing alloy and compound film. One pair of opposite magnetically controlled sputtering targets has target material A in one target and target material B in the other target and can be used to form film alloy A + B on one substrate. During sputtering, changing the sputtering rate of each target can change the alloy composition in a certain range.
Description
The invention belongs to and utilize magnetron sputtering target to prepare the processing method of alloy firm.
At present, utilizing magnetron sputtering to prepare the traditional method of alloy firm is to adopt alloys target and composition target, and alloys target and composition target require prepared beforehand to meet the alloy target material and the composite target material of alloy ratio requirement well, prepare alloy firm layer or compound film with sputtering target then, this kind film forms easily, technology is also simpler, but it is restive that its weak point is an alloy ratio, and disadvantage is to accomplish to adjust at any time or arbitrarily alloy ratio, the inaccessible like this hi-tech requirement that product film is formed.
For solving the deficiency of above alloy firm formation method, purpose of the present invention provides the different material magnetron sputtering target of a kind of subtend to prepare the alloy firm processing method, utilize each target sputtering power of control to control the sputter rate of single target respectively, to reach the purpose of controlling alloy ratio at any time.
The present invention prepares alloy firm technology to guide material magnetron sputtering target and is achieved in that this processing method is made up of subtend different material magnetron sputtering target assembly and CONTROL PROCESS method two portions, wherein the structure of sputtering target is made up of a subtend magnetron sputtering target, one of them is a target 1, another is a target 2, two targets in correspondence with each other, certain intervals is left in the centre, therein a target above be provided with target A, another target is provided with target B (as shown in Figure 1), then sputtering at lip-deep alloy firm composition is A+B, its machining process is to control the different sputter rate of each target with the method for the sputtering power of each target of control, thereby can obtain the alloy of arbitrary proportion between arbitrary metal ratio on the substrate 100: 5～100: 100, and can regulate the change alloy ratio in the course of the work at any time.
The present invention's advantage: simple in structure, easy to install, the target that is provided with two kinds of different metals on to target is the alloy firm of (100: 5～100: 100) preparation arbitrary proportion within the specific limits just.
The present invention's detailed structure and processing method are provided by following examples and accompanying drawing.
Fig. 1 prepares alloy and compound processing method subtend target structure figure for the different material magnetron sputtering target of subtend.
Its structure is by shown in the accompanying drawing, and 1 is that target 1,2 is target A, 3 is target B, and 4 is target 2, controls the sputtering power of each target during work, at this moment the sputter rate difference of two kinds of targets just can form the alloy of A+B different ratios at substrate surface, and its any metal ratio scope is 100: 5～100: 100.
Example: target A is Fe
Target B is Cu
At target is to add power 300W between the target of Fe and the substrate
At target is to add power 230W between the target of Cu and the substrate
Then can be on substrate Fe and Cu ratio are 100: 70 alloy.
Claims (2)
1. the different material magnetron sputtering target of subtend prepares the processing method of alloy firm, it is made up of the subtend sputtering target, it is characterized in that a target (1) therein above be provided with target A, another target (2) is provided with target B, then the alloy firm composition on the sputter substrate surface is A+B.
2. according to the described processing method of claim 1, it is characterized in that technological process is to utilize the method for the sputtering power of each target of control to control the different sputter rate of each target, thereby can obtain the alloy firm that arbitrary alloy ratio is an arbitrary proportion between 100: 5～100: 100, and can regulate the change alloy ratio at work at any time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 98114306 CN1247906A (en) | 1998-09-14 | 1998-09-14 | Technological process of preparing alloy film by using magnetically controlled sputtering target of different material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 98114306 CN1247906A (en) | 1998-09-14 | 1998-09-14 | Technological process of preparing alloy film by using magnetically controlled sputtering target of different material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1247906A true CN1247906A (en) | 2000-03-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 98114306 Pending CN1247906A (en) | 1998-09-14 | 1998-09-14 | Technological process of preparing alloy film by using magnetically controlled sputtering target of different material |
Country Status (1)
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| CN (1) | CN1247906A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101220454B (en) * | 2008-01-16 | 2012-07-18 | 哈尔滨工业大学 | Method for manufacturing surface antimicrobial, abrasion-proof metal/ceramic nano-multilayer film |
| CN104831248A (en) * | 2015-04-17 | 2015-08-12 | 河南科技大学 | Template-free method for preparing large-specific-surface-area copper particle/film composite material |
-
1998
- 1998-09-14 CN CN 98114306 patent/CN1247906A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101220454B (en) * | 2008-01-16 | 2012-07-18 | 哈尔滨工业大学 | Method for manufacturing surface antimicrobial, abrasion-proof metal/ceramic nano-multilayer film |
| CN104831248A (en) * | 2015-04-17 | 2015-08-12 | 河南科技大学 | Template-free method for preparing large-specific-surface-area copper particle/film composite material |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
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