CN1243270A - Positive-negative interoperable chemical amplifying slushing agent and photoetching technology - Google Patents
Positive-negative interoperable chemical amplifying slushing agent and photoetching technology Download PDFInfo
- Publication number
- CN1243270A CN1243270A CN 99119238 CN99119238A CN1243270A CN 1243270 A CN1243270 A CN 1243270A CN 99119238 CN99119238 CN 99119238 CN 99119238 A CN99119238 A CN 99119238A CN 1243270 A CN1243270 A CN 1243270A
- Authority
- CN
- China
- Prior art keywords
- baking
- photoresist
- positive
- photolithographic process
- negative
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001259 photo etching Methods 0.000 title claims abstract description 22
- 239000000126 substance Substances 0.000 title claims abstract description 22
- 238000005516 engineering process Methods 0.000 title abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 49
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 37
- 239000002253 acid Substances 0.000 claims abstract description 8
- 239000002904 solvent Substances 0.000 claims abstract description 8
- 239000011159 matrix material Substances 0.000 claims abstract description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 28
- 230000003321 amplification Effects 0.000 claims description 10
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 10
- 239000007864 aqueous solution Substances 0.000 claims description 7
- 238000004132 cross linking Methods 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000001312 dry etching Methods 0.000 claims description 6
- 239000003513 alkali Substances 0.000 claims description 5
- IDGUHHHQCWSQLU-UHFFFAOYSA-N ethanol;hydrate Chemical compound O.CCO IDGUHHHQCWSQLU-UHFFFAOYSA-N 0.000 claims description 5
- 239000003292 glue Substances 0.000 claims description 5
- 229920005989 resin Polymers 0.000 claims description 5
- 239000011347 resin Substances 0.000 claims description 5
- -1 thioxanthones Chemical compound 0.000 claims description 5
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 claims description 4
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 claims description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 4
- WJFKNYWRSNBZNX-UHFFFAOYSA-N 10H-phenothiazine Chemical compound C1=CC=C2NC3=CC=CC=C3SC2=C1 WJFKNYWRSNBZNX-UHFFFAOYSA-N 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000003960 organic solvent Substances 0.000 claims description 3
- 229950000688 phenothiazine Drugs 0.000 claims description 3
- 239000012956 1-hydroxycyclohexylphenyl-ketone Substances 0.000 claims description 2
- WSEFYHOJDVVORU-UHFFFAOYSA-N 10-phenylphenothiazine Chemical compound C12=CC=CC=C2SC2=CC=CC=C2N1C1=CC=CC=C1 WSEFYHOJDVVORU-UHFFFAOYSA-N 0.000 claims description 2
- CUARLQDWYSRQDF-UHFFFAOYSA-N 5-Nitroacenaphthene Chemical compound C1CC2=CC=CC3=C2C1=CC=C3[N+](=O)[O-] CUARLQDWYSRQDF-UHFFFAOYSA-N 0.000 claims description 2
- 235000015511 Liquidambar orientalis Nutrition 0.000 claims description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 2
- 239000004870 Styrax Substances 0.000 claims description 2
- 244000028419 Styrax benzoin Species 0.000 claims description 2
- 235000000126 Styrax benzoin Nutrition 0.000 claims description 2
- 229920003180 amino resin Polymers 0.000 claims description 2
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 claims description 2
- 239000012965 benzophenone Substances 0.000 claims description 2
- MQDJYUACMFCOFT-UHFFFAOYSA-N bis[2-(1-hydroxycyclohexyl)phenyl]methanone Chemical compound C=1C=CC=C(C(=O)C=2C(=CC=CC=2)C2(O)CCCCC2)C=1C1(O)CCCCC1 MQDJYUACMFCOFT-UHFFFAOYSA-N 0.000 claims description 2
- 125000001033 ether group Chemical group 0.000 claims description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 2
- YCWSUKQGVSGXJO-NTUHNPAUSA-N nifuroxazide Chemical group C1=CC(O)=CC=C1C(=O)N\N=C\C1=CC=C([N+]([O-])=O)O1 YCWSUKQGVSGXJO-NTUHNPAUSA-N 0.000 claims description 2
- 125000005409 triarylsulfonium group Chemical group 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 abstract description 9
- 238000007639 printing Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 2
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 238000005530 etching Methods 0.000 abstract 2
- 239000003431 cross linking reagent Substances 0.000 abstract 1
- 230000001235 sensitizing effect Effects 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000002360 preparation method Methods 0.000 description 7
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 235000011121 sodium hydroxide Nutrition 0.000 description 6
- 238000001459 lithography Methods 0.000 description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
- 238000001015 X-ray lithography Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000000276 deep-ultraviolet lithography Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000007530 organic bases Chemical class 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000005374 membrane filtration Methods 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 235000013824 polyphenols Nutrition 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The present invention belongs to the field of microelectronic photoetching technology and printing plate-making technology.Said invention is formed from matrix film-forming substance, cross-linking agent, sensitizing agent, photosensitive acid-producing material and solvent. Its photoetching process includes the negative photoetching flow: homogenizing photoresist, front baking, exposing, intermediate baking, developing, after baking, etching and removing photoresist; and its positive photoeatching flow: homogenizing photoresist, front baking, exposing, developing, all-exposing, after baking, etching and removing photoresist. The adoption of the said invented photoresist can utilize simple photoetching process change to implement positive/negative interchange.
Description
The invention belongs to technical field of lithography and plate making field that semiconductor devices and micromechanics are made.Be particularly related to the design of a kind of chemical amplification photoresist and photolithography process thereof.
The integrated level of large scale integrated circuit is developing with the speed that increased by four times in 3 years.Improving constantly of integrated level not only means the reduction of minimum device size, also means at a high speed, highly reliable, low energy consumption and low cost.Photoetching process is the gordian technique of large scale integrated circuit, and photoresist is the critical material of photoetching technique, circuit level improve constantly the also development of inevitable requirement photoetching process and photoresist.The chemically amplified photo resist agent is as a kind of novel photoresist, and it has satisfied the requirement of photoetching technique development.What the chemically amplified photo resist agent produced when exposure is catalyzer (being generally acid), and the crosslinked and decomposition reaction of resist can be finished under catalyst action, and catalyzer is not consumed in reaction, so efficient can improve greatly.These characteristics of chemically amplified photo resist agent have satisfied the requirement to high luminous sensitivity of high resolution lithography technology such as deep-UV lithography, X-ray lithography X, have also enlarged the usable range of resist simultaneously.Chemically amplified photo resist agent simultaneously also can be applied in the mask-making technology of press.
The present application people once invented the agent of a kind of negativity water type chemically amplified photo resist, and obtained Chinese patent (92112174.1), the negativity water type chemically amplified photo resist agent of this patent record is by polyhydroxy resin, crosslinking chemical, salt, sensitizer, solvent composition, and its photoetching process comprises: even glue, preceding baking, exposure, middle baking, development.
Advantages such as though this patent has water-based to develop, preparation is easy, cost is lower, but also exist following weak point: in photoetching process, can only use as negative photoresist, and in some steps that microelectronics is produced, must use other some positive photoresists in addition, increased the complicacy of technology.
The objective of the invention is for overcoming the weak point of prior art, a kind of chemical amplification photoresist and photoetching process thereof that can realize the mutual usefulness of positive negativity is provided.Can utilize above-mentioned negative chemical amplification resist, the photoetching process condition is adjusted, obtain the positivity figure.Make it not only satisfy the requirement of high resolution lithography technology such as deep-UV lithography, X-ray lithography X, also enlarged the usable range of resist simultaneously, reduced production cost and simplified technology high luminous sensitivity.
The present invention proposes a kind of chemical amplification photoresist that can realize the mutual usefulness of positive negativity, by matrix film forming matter, crosslinking chemical, sensitizer, photosensitive acid generator, solvent composition.The weight proportion of above-mentioned each component is: add the matrix film forming matter in 100 parts of solvents: 18-22 part, crosslinking chemical: 6-8 part, sensitizer: 0.6-1.6 part, photosensitive acid generator: 1.0-1.6 part.
Said matrix film forming matter can be the resin of hydroxyl, as phenolics or poly(4-hydroxystyrene) resin; Said crosslinking chemical be can with the amino resins of polyvalent alcohol generation ether exchange, as HMMM; Said sensitizer can be used a kind of of 5-nitro acenaphthene, phenothiazine, N-phenyl phenothiazine, benzophenone, anthracene, styrax dimethyl ether, thioxanthones, 1-hydroxy cyclohexyl phenylketone; Said photosensitive acid generator can be a kind of of diaryl group iodized salt, triaryl sulfonium salts; Said solvent can be the organic solvent that can dissolve above-mentioned substance, as N, and dinethylformamide, ethylene glycol ether a kind of.
Photoetching process among the present invention comprises negative photolithographic process flow process and positive photolithographic process flow process.Wherein: its photoetching process comprises:
The negative photolithographic process flow process is:
1) even glue (1500-2000r/min, 30-60s);
2) preceding baking (70-80 ℃, 10min);
3) exposure (30-60mJ/cm
2);
Baking 4) (108-112 ℃, 10-15min);
5) development (3-5% NaOH/5-20% ethanol water);
6) back baking (130-150 ℃, 20-40min);
7) plasma dry etching;
8) remove photoresist.
The positive photolithographic process flow process is: its photoetching process comprises:
1) even glue (1500-2000/min, 30-60s);
2) preceding baking (80-85 ℃, 10-20min);
3) exposure (100-120mJ/cm
2);
4) development (0.5-1% NaOH aqueous solution);
5) blanket exposure (40-60mJ/cm
2);
6) back baking (130-150 ℃, 20-40min);
7) plasma dry etching;
8) remove photoresist.
Adopting alkali/ethanol water in negative photolithographic process is developer; Adopt aqueous alkali to develop in the positive photolithographic process.
The present invention has following characteristics:
1) promptly a kind of chemically amplified photo resist agent has been realized that positive negativity uses mutually by simple technology conversion, not only satisfied the requirement of high resolution lithography technology such as deep-UV lithography, X-ray lithography X to high luminous sensitivity, also enlarged simultaneously the usable range of resist, reduced production cost and simplified technology;
2) adopt aqueous alkali (positive photolithographic process) or alkali-ethanol water (negative photolithographic process) to develop in the photoetching process respectively, overcome the environmental pollution that organic solvent develops and brought;
Two kinds of embodiment of the present invention are described as follows:
Embodiment one
1, the preparation of chemical amplification photoresist
Get cresol-novolak resin 2g, HMMM 0.67g, hexafluoro-phosphate radical diphenyl iodnium 0.16g, phenothiazine 0.10g adds N again, dinethylformamide 2ml, ethylene glycol ether 8ml, after treating that polymkeric substance dissolves fully, can use with 0.2 μ m membrane filtration.
2, photoetching process
(1) technology of positive photoresist
With the rotation lacquering technique photoresist of coating above-mentioned preparation on the silicon chip of protecting thin layer is arranged in growth, thickness 800-1200nm after 10 minutes, is placed on the 15-60 second of exposing under the 200W high-pressure sodium lamp in baking under 70 ℃ under the positivity mask.Then silicon chip is got the positivity figure second with 0.5% sodium hydrate aqueous solution or organic base solution development 10-20, after the rinsing, with silicon slice placed blanket exposure 40-60 second under the 200W high-pressure sodium lamp, post bake was dried by the fire 30 minutes in the back in 140 ℃ of baking ovens then, and the using plasma dry etching promptly obtains the positivity litho pattern on silicon chip.
(2) technology of negative photoresist
With the rotation lacquering technique photoresist of coating above-mentioned preparation on the silicon chip of protecting thin layer is arranged in growth, thickness 800-1000nm after 10 minutes, is placed on the 10-20 second of exposing under the 200W high-pressure sodium lamp in baking under 70 ℃ under the negativity mask.Then silicon chip is placed 110 ℃ of baking oven bakings after 10 minutes, take out silicon chip and get the negativity figure second with the aqueous solution development 10-20 of 3% NaOH (10% ethanol), after the rinsing, post bake was dried by the fire 30 minutes in silicon chip back in 140 ℃ of baking ovens, and the using plasma dry etching promptly obtains the positivity litho pattern on silicon chip.
Embodiment two,
1, the preparation of chemical amplification photoresist is the same.
2, pre-coating light sensitive plate (PS version) manufacturing process
(1) positive PS printing plate technology
Coat the photoresist of above-mentioned preparation with the rotation lacquering technique on the aluminium flake of suitable Grains, thickness 800-1200nm 70 ℃ of bakings after 10 minutes down, is placed under the iodo-potassium lamp of 3KW exposure 15-60 second under the positivity mask.Then silicon chip is got the positivity figure second with 0.5% sodium hydrate aqueous solution or organic base solution development 10-20, after the rinsing, aluminium flake is placed on blanket exposure 40-60 second under the iodo-potassium lamp of 3KW, back baking post bake 30 minutes in 140 ℃ of baking ovens promptly gets positive PS printing plate after the colour-separation drafting then.
(2) negative PS version technology
Coat the photoresist of above-mentioned preparation with the rotation lacquering technique on the aluminium flake of suitable Grains, thickness 800-1000nm 70 ℃ of bakings after 10 minutes down, is placed under the iodo-potassium lamp of 3KW exposure 10-20 second under the negativity mask.Then aluminium flake is placed 110 ℃ of baking oven bakings after 10 minutes, the taking-up aluminium flake gets the negativity figure with the aqueous solution development 10-20 of 3% NaOH (10% ethanol) second, after the rinsing, post bake is dried by the fire 30 minutes in aluminium flake back in 140 ℃ of baking ovens, is negative PS version after the colour-separation drafting.
Claims (6)
1, a kind of chemical amplification photoresist that can realize the mutual usefulness of positive negativity is by matrix film forming matter, crosslinking chemical, sensitizer, photosensitive acid generator, solvent composition.
2, chemical amplification photoresist as claimed in claim 1 is characterized in that, the weight proportion of each component is: add the matrix film forming matter in 100 parts of solvents: 18-22 part; Crosslinking chemical: 6-8 part; Sensitizer: 0.6-1.6 part; Photosensitive acid generator: 1.0-1.6 part.
3, chemical amplification photoresist as claimed in claim 1 is characterized in that, said matrix film forming matter is the resin of hydroxyl; Said crosslinking chemical be can with the amino resins of polyvalent alcohol generation ether exchange; Said sensitizer can be used a kind of of 5-nitro acenaphthene, phenothiazine, N-phenyl phenothiazine, benzophenone, anthracene, styrax dimethyl ether, thioxanthones, 1-hydroxy cyclohexyl phenylketone; Said photosensitive acid generator is a kind of of diaryl group iodized salt, triaryl sulfonium salts; Said solvent can be the organic solvent that can dissolve above-mentioned substance.
4, a kind of employing photoetching technological method of chemical amplification photoresist according to claim 1 comprises negative photolithographic process flow process and positive photolithographic process flow process, and wherein: said negative photolithographic process flow process is:
1) even glue (1500-2000r/min, 30-60s);
2) preceding baking (70-80 ℃, 10min);
3) exposure (30-60mJ/cm
2);
Baking 4) (108-112 ℃, 10-15min);
5) development (3-5% NaOH/5-20% ethanol water);
6) back baking (130-150 ℃, 20-40min);
7) plasma dry etching;
8) remove photoresist.
Said positive photolithographic process flow process is:
9) even glue (1500-2000/min, 30-60s);
10) preceding baking (80-85 ℃, 10-20min);
11) exposure (100-120mJ/cm
2);
12) development (0.5-1% NaOH aqueous solution);
13) blanket exposure (40-60mJ/cm
2);
14) back baking (130-150 ℃, 20-40min);
15) plasma dry etching;
16) remove photoresist.
5. photoetching technological method as claimed in claim 4 is characterized in that, adopting alkali/ethanol water in negative photolithographic process is developer; Adopt aqueous alkali to develop in the positive photolithographic process.
6. photoetching technological method as claimed in claim 4 is characterized in that, adopting the 3-5%NaOH/5-20% ethanol water in negative photolithographic process is developer; Adopt the 0.5-1%NaOH aqueous solution to develop in the positive photolithographic process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 99119238 CN1085350C (en) | 1999-08-27 | 1999-08-27 | Positive-negative interoperable chemical amplifying slushing agent and photoetching technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 99119238 CN1085350C (en) | 1999-08-27 | 1999-08-27 | Positive-negative interoperable chemical amplifying slushing agent and photoetching technology |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1243270A true CN1243270A (en) | 2000-02-02 |
| CN1085350C CN1085350C (en) | 2002-05-22 |
Family
ID=5280784
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 99119238 Expired - Fee Related CN1085350C (en) | 1999-08-27 | 1999-08-27 | Positive-negative interoperable chemical amplifying slushing agent and photoetching technology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1085350C (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1323326C (en) * | 2003-05-22 | 2007-06-27 | 台湾积体电路制造股份有限公司 | Water soluble negative photoresist and method for forming photoresist pattern |
| CN102508415A (en) * | 2011-11-02 | 2012-06-20 | 上海宏力半导体制造有限公司 | Photoetching process flow and method for eliminating photoetching defects |
| CN105237669A (en) * | 2015-09-11 | 2016-01-13 | 苏州瑞红电子化学品有限公司 | Preparation of 248 nm deep ultraviolet photoresist film forming resin based on RAFT polymerization method |
| CN105490660A (en) * | 2015-12-15 | 2016-04-13 | 北京中科飞鸿科技有限公司 | Method for reducing in-band fluctuations of large-broadband low-loss trapezoidal surface acoustic wave filter |
| CN106449398A (en) * | 2016-10-27 | 2017-02-22 | 安徽富芯微电子有限公司 | A technique reducing photolithography wet etching and undercutting |
| CN113741157A (en) * | 2021-08-11 | 2021-12-03 | 泗洪明芯半导体有限公司 | Environment-friendly fixing method in chip manufacturing process |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100126367A1 (en) * | 2007-09-21 | 2010-05-27 | Ji-Su Kim | Method for etching glass or metal substrates using negative photoresist and method for fabricating cliche using the same |
| CN110757851B (en) * | 2019-10-30 | 2021-07-06 | 常州乐棋舒康纺织有限公司 | Oil-proof and water-proof tablecloth production process |
-
1999
- 1999-08-27 CN CN 99119238 patent/CN1085350C/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1323326C (en) * | 2003-05-22 | 2007-06-27 | 台湾积体电路制造股份有限公司 | Water soluble negative photoresist and method for forming photoresist pattern |
| CN102508415A (en) * | 2011-11-02 | 2012-06-20 | 上海宏力半导体制造有限公司 | Photoetching process flow and method for eliminating photoetching defects |
| CN105237669A (en) * | 2015-09-11 | 2016-01-13 | 苏州瑞红电子化学品有限公司 | Preparation of 248 nm deep ultraviolet photoresist film forming resin based on RAFT polymerization method |
| CN105237669B (en) * | 2015-09-11 | 2018-05-11 | 苏州瑞红电子化学品有限公司 | One kind prepares 248nm deep ultraviolet light-sensitive lacquer film-forming resins based on RAFT polymerizations |
| CN105490660A (en) * | 2015-12-15 | 2016-04-13 | 北京中科飞鸿科技有限公司 | Method for reducing in-band fluctuations of large-broadband low-loss trapezoidal surface acoustic wave filter |
| CN106449398A (en) * | 2016-10-27 | 2017-02-22 | 安徽富芯微电子有限公司 | A technique reducing photolithography wet etching and undercutting |
| CN113741157A (en) * | 2021-08-11 | 2021-12-03 | 泗洪明芯半导体有限公司 | Environment-friendly fixing method in chip manufacturing process |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1085350C (en) | 2002-05-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0232972B1 (en) | Negative photoresist compositions and processes for preparing thermally stable, negative images using them | |
| JPS63146038A (en) | Photosensitive composition | |
| CN1443315A (en) | Photoresist composition for deep UV and process thereof | |
| CN111948904B (en) | Photoresist composition, method for forming photolithographic pattern using the same, and use thereof | |
| KR20010015280A (en) | A method of forming a photoresist pattern | |
| WO2021259092A1 (en) | Photoresist composition and method for forming thin film pattern and array substrate by using same | |
| CN1085350C (en) | Positive-negative interoperable chemical amplifying slushing agent and photoetching technology | |
| JPH02181149A (en) | Polyimide type positive photoresist | |
| TWI697737B (en) | Radiosensitive composition | |
| CN1518684A (en) | Thiopene-containing photo acid generators for photolithography | |
| CN1811595A (en) | Photoresist compositions | |
| CN1181109C (en) | Organic polymer for anti-reflection coating and preparation method thereof | |
| JP2567984B2 (en) | Positive resist composition | |
| WO2008018749A1 (en) | Resin composition for forming fine patterns, method for fabricating semiconductor device using the composition and semiconductor device fabricated by the method | |
| US3669662A (en) | Cyclic polyisoprene photoresist compositions | |
| CN113214428B (en) | Bio-based star ArF photoresist film-forming resin, photoresist composition and preparation method thereof | |
| Dammel et al. | Highly sensitive x-ray and electron-beam resists using chemical amplification | |
| US7005220B2 (en) | Method for structuring a lithography mask | |
| CN113219789A (en) | Star-shaped ArF photoresist film-forming resin, preparation method thereof and photoresist composition | |
| US7867687B2 (en) | Methods and compositions for reducing line wide roughness | |
| TWI220267B (en) | Manufacturing method of transferring pattern with high aspect ratio | |
| CN1082676C (en) | Positive photosensitive composition | |
| KR102615655B1 (en) | Positive photoresist composition and photolithography method using thereof | |
| WO2023246243A1 (en) | Ultraviolet photoresist, and ultraviolet photoresist patterning method and use | |
| US3501296A (en) | Production of light-sensitive coatings for use in the manufacture of copying materials such as printing plates |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |