CN1241813A - Assembly technology for nanometer carbon tube and relevant electronic device - Google Patents
Assembly technology for nanometer carbon tube and relevant electronic device Download PDFInfo
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- CN1241813A CN1241813A CN 99103111 CN99103111A CN1241813A CN 1241813 A CN1241813 A CN 1241813A CN 99103111 CN99103111 CN 99103111 CN 99103111 A CN99103111 A CN 99103111A CN 1241813 A CN1241813 A CN 1241813A
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- tube
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- single walled
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Abstract
The present invention belongs to the field of hi-tech and, especially, of nanometer electronic device. The present invention relates to the technology of assembling nanometer carbon tubes vertically on pure metal substrate surface and the electronic device manufactured by utilizing the said technology, including array field emitting electron source, field emitting plate display device, the pin point of scanning probe microscope, sample for field emitting electronic microscope. The present invention also relates to test equipment for the property of nanometer carbon tube and nanometer electronic amplifier, vibrator and switching devices manufactured by utilizing the quantum characteristics and negative resistance characteristics produced by means of the said technology.
Description
The invention belongs to high and new technology novel nano field of electronic devices.
The present invention relates to carbon nano-tube be erected on the clean metal substrate surface packaging technology and with the electronic device of this technology manufacturing, comprise the array field emitting electronic source, display of field-emitting flat panel, the needle point of scanning probe microscopy (SPM), the sample of field emission microscope (FEM), the device of test carbon nano-tube characteristic and the Quantum Properties and the negative resistance charactertistic curve that utilize this technology to produce are made nanoelectronic amplifier, oscillator and electronic switching device.
Carbon nano-tube is 91 years found novel nano-materials, because it is extremely small, yardstick, diameter are nanometer scale, how its assembling is applied to field of electronic devices, and this is everybody try hard to gain problem of research in recent years.Development is the mixture of compound wall type or compound wall type and minority Single Walled Carbon Nanotube at present, utilize the compound wall carbon nano pipe array of growing to make field emitting electronic source if any the people at silicon face, because the compound wall carbon nano-tube is long and cohesion, make that the efficient of field emitting electronic source is not high, provide current density little, its electron stream is a milliampere magnitude; Also there is the people once in a while the compound wall carbon nano-tube to be sticked with glue the probe of making scanning force microscopy (SFM) on the silicon needle point; But in fact the technical application complexity be difficult to realize, so these prior aries should not be used for making the novel nano electronic device.
The objective of the invention is to propose a kind of new technology, can realize that with simple and reliable method carbon nano-tube being vertical state group is contained in clean metal surface stable in the atmosphere, thereby the array field emitting electronic source of the big electric current of available this technology manufacturing, make high-resolution flat field emission display, make the needle point of SPM and the carbon nano-tube sample of FEM, the device of carbon nano-tube physical characteristic is measured in development, amplifier, oscillator and the electronic switching device of research carbon nano-tube.
The object of the present invention is achieved like this: 1. the Single Walled Carbon Nanotube of the separation that obtains with the chemical cleavage technology is carried out multiple times of filtration, make the purity of Single Walled Carbon Nanotube reach 90%, making the weight ratio Single Walled Carbon Nanotube with deionized water again is 1% water soluble colloid, and wherein the length of carbon nano-tube is 10～100 nanometers.Place slender glass tube to seal long storage time this water soluble colloid, realize the separation of length of carbon nanotube.Carry out then by the different sortings of hydrosol post height, the shortest carbon nano-tube is in the superiors of hydrosol post, and this carbon rice is received the pipe hydrosol and is called stoste.2. with the deionized water dilution of carbon nano-tube hydrosol stoste with 10 times, place beaker or test tube, sonicated 20 minutes is fully separated carbon nano-tube, evenly distributes.3. desire assembling is gone up in the atmosphere of carbon nano-tube chemically stable metallic substrates and carry out conscientious the deoiling processing that depollutes, obtain pure metal surface; Or do substrate with vacuum-deposited new metallic film surface.4. get needed carbon nano-tube dilution, be coated onto on the pure metallic substrates with lacquering technique; Or use immersion method, and substrate is immersed in the hydrosol of dilution, take out after static 1 hour.5. the sample that will have the carbon nano-tube hydrosol again places the baking oven heating, drying, promptly finishes packaging technology, produces branch and stands in carbon nano pipe array on the substrate surface, as shown in Figure 1.Or be erected at the single-root carbon nano-tube structure of substrate surface, as shown in Figure 2.
Can make in the present invention that carbon nano-tube is firm, to erect the mechanism that stands in substrate surface be that the carbon nano-tube end of opening has the very strong electron cloud of outside stretching, extension and the stronger interaction of electron cloud generation on clean metal surface, make carbon nano-tube can firmly be erected at base metal surfaces.
In specific operation process, note:
(1) add the different deionized waters of measuring in carbon nano-tube aqueous solutions stoste, different dilute strengths is controlled
The density of system assembled carbon nano-tube, as add 10 times of deionized waters and add 100 times of deionized waters then
Carbon nanotube density obviously becomes 10: 1.
(2) must be stable in atmosphere as the metal of substrate, do not generate oxide or hydroxide
Metal, as gold, platinum, tungsten, molybdenum, graphite etc., its shape can be an also metal of metal film
Silk.
Be assembled in the carbon nano pipe array on the metal surface, the height of its Single Walled Carbon Nanotube is～15 nanometers, and diameter is 1.1～1.4 nanometers, but every square centimeter of assembled carbon nano-tube 10
10～10
13Root can be received peace by electric current 50, be every square centimeter 10 so carbon nano pipe array can provide an emission for every
2～10
5Ampere, so carbon nano pipe array is mixed corresponding anode or phosphor screen can be made big current field emission electron sources or high-resolution flat-panel monitor.Single Walled Carbon Nanotube is assembled on other tip of spun gold end or gold-plated film, can makes SPM needle point or FEM sample, can obtain the sample surfaces pattern picture that the high depth of field and atom are differentiated.The carbon nano-tube of single certain-length is assembled on the spun gold end, can be used as an electrode, accurately control and another electrode contact condition add required accessory, can carry out carbon nano-tube electricity, optics, photoelectricity and mechanical property, and the measurement of other physics, chemical characteristic.Install us with this type of and construct and measured the current-voltage of Single Walled Carbon Nanotube (I-V) characteristic curve under the room temperature, present nonlinear Quantum Properties and negative resistance charactertistic, according to the electronic device principle, can utilize this specific character to make amplifier, oscillator and the electronic switching device of carbon nano-tube.
The Figure of description explanation.
Fig. 1 is erected at the carbon nano tube array structure figure of gold surface.
Fig. 2 is erected at the single-root carbon nano-tube structure chart of gold surface.
Fig. 3 carbon nano-tube is made the structural representation of three kinds of probes.
The I-V curve that has Quantum Properties under Fig. 4 Single Walled Carbon Nanotube room temperature.
Fig. 5 Single Walled Carbon Nanotube amplifier architecture figure.
Negative resistance charactertistic curve under Fig. 6 Single Walled Carbon Nanotube room temperature.
Fig. 7 Single Walled Carbon Nanotube oscillator structure figure.
The structure chart of Fig. 8 Single Walled Carbon Nanotube derailing switch.
6. 7. 9. quartz-crystal unit 10. resistance of insulating barrier 8. drain electrodes (D) of gate electrode (G) of 1. Single Walled Carbon Nanotube, 2. pure golden 3. tungsten tips, 4. silicon needle points, 5. source electrodes (S) among the figure
Embodiments of the invention:
Example one, will be through the deionized water dilution of the carbon nano-tube aqueous solutions stoste of length sorting with 10 times, after sonicated, be coated with lacquering technique or immersion method to pure crystalline state metallic film surface, the carbon nano-tube that promptly produces is as shown in Figure 1 erect the structure of array on golden film surface.
Example two, will be through the deionized water dilution of the carbon nano-tube aqueous solutions stoste of length sorting with 100 times, after sonicated, pure golden film is immersed in the dilute aqueous solution with immersion method, promptly a Single Walled Carbon Nanotube that produces as shown in Figure 2 is erected at golden film surface, can be used as the basic structure of carbon nano-tube electron device.
Example three, as shown in Figure 3 provides three kinds of probe structures: carbon nano-tube in terminal 2 assemblings of spun gold, make the STM needle point; Make the FEM sample or make the STM needle point assembling carbon nano-tube on the tungsten tip 3; Carbon nano-tube is made the needle point of SFM in gold coated films assembling on the silicon needle point 4.These needle points have sharp-pointed shape, very high resolution, and FEM needle point sample can be differentiated the atom picture of carbon nano-tube end structure.
Show by experiment between the Single Walled Carbon Nanotube and gold substrate that is assembled on the spun gold, record the I-V curve with Quantum Properties as shown in Figure 4 under the room temperature, it is the basis of making the Single Walled Carbon Nanotube amplifier.
Fig. 6 is the I-V curve under two interelectrode Single Walled Carbon Nanotube room temperatures, presents negative resistance charactertistic, can utilize this characteristic to make the oscillator and the electronic switching device of Single Walled Carbon Nanotube.
Example four, as shown in Figure 5 is the structural representation of carbon nano-tube amplifier, at source (S) 5 with leak Single Walled Carbon Nanotube 1 adjacent doors electrode (G) 6 between (D) 8, it with leakage (D) 8 between separate with insulating barrier 7.
Example five, as shown in Figure 7 is to be assembled in the oscillator that Single Walled Carbon Nanotube 1 and quartz-crystal unit 9 on the gold substrate 2 are in series, V
0Be supply voltage.
Example six, as shown in Figure 8 is to connect with the Single Walled Carbon Nanotube 1 on being assembled in gold substrate 2 with resistance 10, constitutes the structural representation of electronic switching device.
Claims (7)
1, a kind of carbon nano-tube package assembly comprises carbon nano-tube and substrate two parts, it is characterized in that:
(1) discrete, vertical, firm the standing in the substrate of carbon nano-tube energy;
(2) substrate is following metal, adopts in the following metal any one: gold, platinum, tungsten, molybdenum, antimony or graphite;
2, carbon nano-tube package assembly according to claim 1 is characterized in that:
(1) a plurality of Single Walled Carbon Nanotube are arranged with array way;
(2) substrate is the metal flat film;
3, carbon nano-tube package assembly according to claim 1 is characterized in that:
(1) Single Walled Carbon Nanotube;
(2) substrate can be metal flat film or metal needle point silk;
Constitute the package assembly of single carbon nano-tube;
4, carbon nano-tube package assembly according to claim 1 is characterized in that:
(1) Single Walled Carbon Nanotube;
(2) substrate is a wire;
(3) the Single Walled Carbon Nanotube package assembly is connected between source electrode (5) and the drain electrode (8), with door
The utmost point (6) is adjacent, separates pie graph 5 with insulator (7) between gate electrode (6) and drain electrode (8)
Shown carbon nano-tube amplifier;
5, carbon nano-tube package assembly according to claim 1 is characterized in that:
(1) Single Walled Carbon Nanotube;
(2) substrate is a wire;
(3) Single Walled Carbon Nanotube package assembly and quartz-crystal unit (9) are in series, and constitute oscillator shown in Figure 6;
6, carbon nano-tube package assembly according to claim 1 is characterized in that:
(1) Single Walled Carbon Nanotube;
(2) substrate is metal film or wire;
(3) resistance (10) is connected with the Single Walled Carbon Nanotube package assembly, constitutes electronic switching element as shown in Figure 8;
7, a kind of carbon nano-tube assemble method, said assembling thing comprises carbon nano-tube and metallic substrates two parts, can be in gold, platinum, tungsten, molybdenum, antimony and the graphite any one as the metal of substrate, the method for assembling is:
(1) with Single Walled Carbon Nanotube aqueous solution colloid static deposit about one month of purity more than 90%;
(2) press the different post high position of the aqueous solution, the carbon nano-tube stoste of sorting Len req;
(3) stoste in the desired amount adds the deionized water dilution;
(4) thoroughly remove the greasy dirt impurity of metal substrate surface;
(5) with lacquering technique or immersion method carbon nano-tube is assembled in the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 99103111 CN1091544C (en) | 1999-03-24 | 1999-03-24 | Assembly technology for nanometer carbon tube and relevant electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 99103111 CN1091544C (en) | 1999-03-24 | 1999-03-24 | Assembly technology for nanometer carbon tube and relevant electronic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1241813A true CN1241813A (en) | 2000-01-19 |
| CN1091544C CN1091544C (en) | 2002-09-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 99103111 Expired - Fee Related CN1091544C (en) | 1999-03-24 | 1999-03-24 | Assembly technology for nanometer carbon tube and relevant electronic device |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7160532B2 (en) | 2003-03-19 | 2007-01-09 | Tsinghua University | Carbon nanotube array and method for forming same |
| US7288321B2 (en) | 2002-11-21 | 2007-10-30 | Tsinghua University | Carbon nanotube array and method for forming same |
| CN100355648C (en) * | 2005-11-30 | 2007-12-19 | 北京大学 | Method for preparing crossing array of Nano carbon tubes |
| CN1732551B (en) * | 2002-12-27 | 2012-03-28 | 松下电工株式会社 | Field emission-type electron source and method of producing the same |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1830753A (en) | 2005-03-10 | 2006-09-13 | 清华大学 | Assembling method of carbon nanometer pipe and carbon nanometer pipe device |
| CN1840465B (en) | 2005-03-30 | 2010-09-29 | 清华大学 | Method for manufacturing unidimensional nano material device |
| CN100572260C (en) | 2005-03-31 | 2009-12-23 | 清华大学 | The manufacture method of unidimensional nano material device |
-
1999
- 1999-03-24 CN CN 99103111 patent/CN1091544C/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7288321B2 (en) | 2002-11-21 | 2007-10-30 | Tsinghua University | Carbon nanotube array and method for forming same |
| CN1732551B (en) * | 2002-12-27 | 2012-03-28 | 松下电工株式会社 | Field emission-type electron source and method of producing the same |
| US7160532B2 (en) | 2003-03-19 | 2007-01-09 | Tsinghua University | Carbon nanotube array and method for forming same |
| CN100355648C (en) * | 2005-11-30 | 2007-12-19 | 北京大学 | Method for preparing crossing array of Nano carbon tubes |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1091544C (en) | 2002-09-25 |
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