CN1240945A - Optical intensity modulator and fabrication method therefor - Google Patents
Optical intensity modulator and fabrication method therefor Download PDFInfo
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- CN1240945A CN1240945A CN 99109289 CN99109289A CN1240945A CN 1240945 A CN1240945 A CN 1240945A CN 99109289 CN99109289 CN 99109289 CN 99109289 A CN99109289 A CN 99109289A CN 1240945 A CN1240945 A CN 1240945A
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Abstract
In an optical intensity modulator, and a fabrication method thereof, the optical intensity modulator includes a substrate made of a predetermined material, an arc shaped optical waveguide formed on the substrate, and an electrode formed on the optical waveguide such that the electrode is in alignment with the optical waveguide, the refractive index of the optical waveguide being changed in accordance with an intensity of an electric field applied to the electrode, and an optical wave passing a predetermined location of the optical waveguide being radiated into the substrate due to the changed refractive index. Accordingly, a large modulation depth can be obtained from only a small refractive index variation by using the radiation loss characteristics of the arc shaped waveguide.
Description
The present invention relates to a kind of light intensity modulator with and manufacture method, refer more particularly to a kind of light intensity modulator, and the method for making this light intensity modulator with bent lightguide.
The integrated optics technique meaning is to make several manufacturing technologies that comprise the optical device of optical waveguide in a substrate.When using integrated optics technique, the arrangement of unit light device is easy, and therefore complicated multifunction device can easily be manufactured in the less area.A photomodulator is exactly a kind of of integrated optical device.This photomodulator control utilizes external signal to control a phase place and the intensity along the light wave of optical waveguide propagation.Integrated photomodulator utilizes the electro-optic effect of medium or heat-luminous effect to form optical waveguide.For example, a kind of typical electrical-optical material comprises a kind of semiconductor (GaAs, InP), a kind of ferroelectric material (LiNbO
3, LiTaO
3), perhaps polar polymer.When an electric field when a direction is added on these materials, the refractive index of this material is changing on the direction of an electric field He on the vertical direction.Because change of refractive is exactly the change of light wave on phase place of propagating in a kind of medium, so phase modulation (PM) and intensity modulated can utilize this variation to obtain.In utilizing the photomodulator of electro-optic effect, the close optical waveguide formation of an a kind of capacity type electrode voltage then is applied to this capacity type electrode so that provide an electric field to optical waveguide.Differ widely with electro-optic effect, heat-luminous effect almost is that all luminescent material all have.When the temperature variation of material, because the contraction of material volume is depended on the variation of material temperature with expanding, so the refractive index of material changes.Therefore, be similar to electro-optic effect, heat-luminous effect also can be utilized phase modulation (PM) and the intensity modulated that obtains light wave.In utilizing the photomodulator of heat-luminous effect, a microheater is manufactured near the optical waveguide, and an electric current is applied to microheater so that provide heat to optical waveguide then.Because heat-luminous effect is presented in nearly all luminescent material, so can select various materials.Also have, modulating characteristic can be independent of the light wave polarization and obtain.Yet heat-luminous effect is compared with electro-optic effect has very slow time resolution characteristics (about 1 millisecond).Therefore, heat-luminous effect modulator generally is suitable for the application that needs a polarization autonomous behavior and the application that is not suitable for the high-speed optical signal data transmission.
Integrated photomodulator is divided into intensity modulator that utilizes phase modulation (PM) and the cut-out photomodulator that directly obtains light intensity modulation roughly.A kind of Mach-Zehnder interferometric modulator that Figure 1A shows is exactly to utilize the representative of a kind of light intensity modulator of phase modulation (PM).The photomodulator of Figure 1A is made up of substrate 100, optical waveguide 102 and electrode 104.The work of this modulator is described below.The light that is input to optical waveguide 102 is divided into two-way, and this be divided into the light beam of two-way owing to impose on the external electrical field of electrode 104 the phase modulation (PM) difference, they are by different paths simultaneously.If the two-way light wave is synchronous at the output terminal of optical waveguide 102, then Shu Ru luminous power does not almost have to change to be output.If this two-way light wave is an out of phase, they take place to disturb nocuously each other, so that this light wave is radiated substrate 100.Therefore, Output optical power becomes zero.
The cut-out photomodulator of Figure 1B is a kind of representative of cut-out photomodulator of direct acquisition light intensity modulation, and it is made up of substrate 110, optical waveguide 112 and electrode 114.Its work is described below.When a big voltage is applied to the electrode 114 that is positioned on the part optical waveguide 112, the refraction index changing of this optical waveguide.When optical waveguide 112 by the change of refractive index by the time, the light wave of guiding is radiated on the substrate, and output becomes zero.
Shown in Figure 1A, utilize the interference light intensity modulator of phase modulation (PM) only to need the phase modulation (PM) of light, so driving voltage is low, and can create a kind of good guided wave condition of optical waveguide.Therefore, the insertion loss of this device is little.Yet this interference light modulator makes the complex structure of optical communication system, and its reason is to be sinusoidal output characteristics corresponding to added voltage.Also have, because the working point of this photomodulator is responsive for the factor of external change, for example, and temperature, humidity or pressure are so need many additional devices to be used for monitoring and compensating the working point of photomodulator.This just causes the cost that has increased the structure optical communication system.
The cut-out photomodulator of Figure 1B can solve some shortcomings of above-mentioned interference photomodulator.The working point that cuts off photomodulator can be provided with selectively, has not needed so be used to be provided with the direct current biasing of working point.In addition, so that can being used in, this cut-out photomodulator do not need special additional device with respect to the working point drift phenomenon of external factor is little in the optical communication system.Also have, this cuts off photomodulator and shows corresponding to alive linear output character.Therefore, it is particularly useful for analog communication system that this cuts off photomodulator.In addition, digital output characteristics can obtain under the guided wave condition of special light waveguide, can easily be used for digital communication and not need the additional signal processing apparatus so that cut off photomodulator.Yet this cut-out photomodulator has big driving voltage and high insertion loss.When variations in refractive index is big, need cut off waveguide, and approximately the attenuation ratio of 20dB generally is could obtain by applying one tens volts or bigger voltage.In addition, must be provided with near cut-off region according to the primary wave sliver spare of principle of work optical waveguide, it is bigger therefore to insert loss.
For addressing the above problem, the purpose of this invention is to provide a kind of light intensity modulator, this modulator has some arc waveguides, and this arc waveguide is used for light wave being radiated a substrate for this arc waveguide by applying an external modulation signal when the predetermined position of light wave by curved waveguide.
Another object of the present invention provides a kind of method of making light intensity modulator, this modulator has some arc waveguides, and this arc waveguide is used for light wave being radiated a substrate for this arc waveguide by applying an external modulation signal when the predetermined position of light wave by curved waveguide.
In addition, reach first purpose, comprise at this a kind of light intensity modulator that provides: the substrate that predetermined material is made, one are formed on on-chip optical waveguide and one with arcuate shape and are formed on the optical waveguide electrode with the optical waveguide parallel arranged, wherein the refractive index of optical waveguide changes along with the electric field intensity that imposes on electrode, and because the change of refractive index, the light wave of a predetermined position by optical waveguide is radiated on the substrate.
Reach first purpose, comprise at this another kind of light intensity modulator that provides: a under-clad layer of on substrate, making with predetermined material; One has the optical waveguide that the material bigger than under-clad layer refractive index forms, and this optical waveguide is formed on under-clad layer with arcuate shape; A top covering that forms with the under-clad layer material is so that the protection optical waveguide; And electrode that is formed on the top covering with the optical waveguide parallel arranged, wherein the refractive index of optical waveguide changes along with the electric field intensity that imposes on electrode, and because the change of refractive index, the light wave of a predetermined position by optical waveguide is radiated on the substrate.
Reach second purpose, provide a kind of method of making light intensity modulator at this, may further comprise the steps: under-clad layer of deposit is on a substrate; The core-wire layer that one of deposit has refractive index greater than the under-clad layer refractive index; By corroding arc optical waveguide of this core-wire layer formation to this core-wire layer composition and according to this pattern; The top covering of one of deposit and under-clad layer same material is with the protection optical waveguide; And on top covering, form one with the polarized electrode of optical waveguide parallel arranged so that utilize an electric field this optical waveguide that polarizes, and form one and be used for applying the top electrode of external modulation signal on polarized electrode.
Reach second purpose, provide a kind of method of making light intensity modulator, may further comprise the steps: on a substrate, form an arc optical waveguide pattern at this; Cover all parts except optical waveguide part along this pattern, this mask structure is immersed in a kind of proton source solution, and in proton source solution, replaces proton with the ion that is present in the substrate; For forming crooked shape optical waveguide by this composite structure of thermal treatment preset time; And on this bending shape optical waveguide, form an electrode.
Purpose that the present invention is above-mentioned and advantage describe in detail more obvious by the reference accompanying drawing:
Figure 1A and 1B are the skeleton views of conventional photomodulator;
Fig. 2 A and 2B are the planimetric maps according to light intensity modulator of the present invention;
Fig. 3 illustrates the wave guide principles that a light wave is propagated along the crooked shape optical waveguide of Fig. 2 A and 2B;
Relation between Fig. 4 A, 4B and radiation diacustic of 4C explanation and the effective refractive index;
Fig. 5 A is the viewgraph of cross-section that is used for illustrating the method for an electrical-optical light intensity modulator constructed in accordance to Fig. 5 G;
Fig. 6 A and 6B are structure skeleton views according to electrical-optical light intensity modulator of the present invention;
Fig. 7 A and 7B are structure skeleton views according to heat of the present invention-light light intensity modulator;
Fig. 8 A and 8B show the structural drawing of the crooked shape optical waveguide of the work that will determine photomodulator according to the present invention; And
Fig. 9 is a figure as a result who is presented at combine digital simulation on the photomodulator with the optical waveguide shown in Fig. 8 A and the 8B.
Fig. 2 A is a plan view according to electrical-optical light intensity modulator of the present invention.The photomodulator of Fig. 2 A comprises that electrode that an input waveguide 200, one be made up of an arc-shaped bend at least 202, output waveguide 204 and one are used to provide the voltage source 206 that electric field is given electrode 202.When electrode 202 was made up of two or more arc-shaped bend electrodes, this meander electrode was formed on the upper surface of a curved waveguide (not having to show), and voltage is added on the electrode 202, and substrate (not showing) is a ground voltage.When electrode 202 was made up of two or more arc-shaped bend electrodes, some electrodes were formed on the upper surface of a curved waveguide and are positioned at the left and right sides of this curved waveguide.Electrode in the middle of voltage is added to, and remaining electrode is a ground voltage.A kind of electrical-optical material comprises, for example, and semiconductor (GaAs, InP), ferroelectric material (LiNbO
3, LiTaO
3), perhaps polar polymer.This curved waveguide is a kind of fan-shaped circular arc or a kind of connection with some fan-shaped circular arcs of same radius, forms sine or cosine curve shape.
Plan view of Fig. 2 B according to heat of the present invention-light light intensity modulator.The photomodulator of Fig. 2 B comprises that microheater that an input waveguide 210, one form by an arc-shaped bend at least 212, output waveguide 214 and one are used to provide the current source 216 that electric current is given microheater 212.When microheater 212 was made up of two or more arc-shaped bend electrodes, this bending microheater 212 was formed on the upper surface of a curved waveguide.When microheater 212 was made up of some arc-shaped bends, some arc-shaped bends were formed on the upper surface of a curved waveguide and are positioned at the left and right sides of this curved waveguide.A kind of heat-luminescent material comprises, for example, and semiconductor (GaAs, InP), ferroelectric material (LiNbO
3, LiTaO
3), polymkeric substance or silicon dioxide.This curved waveguide, a kind of fan-shaped circular arc or a kind of connection with some fan-shaped circular arcs of same radius are with the shape formation of sine or cosine bending.
Job description according to light intensity modulator of the present invention is as follows.After forming a wave guide mode, a light wave that is input to photomodulator, exports to a bent lightguide (not showing) then simultaneously by along input waveguide 200 or 210 conduction.When not existing when voltage source 206 or current source 216 offer the voltage of electrode 202 or microheater 212 or electric current, the light wave in crooked shape waveguide is output to output waveguide 204 or 214 after by curved waveguide.Yet when a voltage or electric current were provided, the light wave in crooked shape waveguide was radiated substrate (not showing) and outputs to output waveguide 204 or 214.
To describe the work of above-mentioned crooked shape waveguide now in detail.Fig. 3 illustrates the wave guide principles of light wave along the curved waveguide transmission of Fig. 2 A and 2B.With reference to figure 3, curved waveguide is a kind of circular shape with radius R.If greater than the width W of an optical waveguide, the direct light phase velocity of wave is similar to the tangential velocity on the circular arc set point to radius R fully, 1 describe as the following formula:
Wherein c is illustrated in airborne ray velocity, n
EffThe effective refractive index of a curved waveguide of expression, and θ represents the angle that light wave rotates along this curved waveguide.
That is, do not change shape, a bit should have same angular velocity (d θ/dt) with the institute on the phase surface 1 at one in order to make light wave pass through a curved waveguide.If this light wave rotates with the θ angle along curved waveguide, one with on the phase surface 1 a bit should be by the respective point of map to phase surface 2 on.That is, the necessary map of some A is to a some A ', and some B must map arrive a some B '.In order to satisfy this condition, must be (R+x) d θ/dt in the tangential velocity away from the position x at curved waveguide center radially.Yet this tangential velocity can not surpass a threshold values ray velocity (c/n who is determined by reflectivity in the curved waveguide outside
1).Tangential velocity becomes identical curve with the threshold values ray velocity and is known as a radiation caustic curve, and this radiation caustic curve x
r, determine by following formula 2:
N wherein
1The reflectivity of expression substrate.
Light wave passes through away from radiation caustic curve x
rThese points, between synchronous point, can not resemble light wave by being lower than x
rPoint rotate fast like that.Therefore, process is away from x
rThe light wave of point be left on back with phase surface, and be radiated a substrate subsequently.
With reference to formula 2, the radiation caustic curve of curved waveguide is to be determined by the guide wave condition.Relation between Fig. 4 A, 4B and 4C explanation radiation caustic curve and the effective reflectivity.In Fig. 4 A, the wherein effective reflectivity of curved waveguide and the difference between the substrate little (that is, under bad guided wave situation), shown in Fig. 4 C, so the bend loss of light wave increases the radiation caustic curve near the center of waveguide.On the contrary, the effective reflectivity of curved waveguide is than the effective reflectivity of substrate big (that is, under good guided wave situation) in Fig. 4 B, and shown in Fig. 4 C, so the bend loss of light wave reduces the radiation caustic curve away from the center of waveguide.In addition, when curved waveguide is when being formed by the electrical-optical material, the position of radiation caustic curve utilizes an electric field to move by the effective reflectivity of control curved waveguide, perhaps when it be to utilize heat to control when forming by heat-luminescent material.So the bend loss amount of curved waveguide can be controlled.
Fig. 5 A is that some viewgraph of cross-section are used for the method for making of graphic extension according to a kind of electrical-optical light intensity modulator of the present invention to 5G.At first, a kind of silicon dioxide (SiO
2) insulating thin layer 502 is deposited on the silicon chip 500 shown in Fig. 5 A.In Fig. 5 B, the metal level that is used as bottom electrode 504 is deposited on the silicon dioxide insulator thin layer 502.In Fig. 5 C, a under-clad layer 506 is deposited on the bottom electrode 504.In Fig. 5 D, one has the core-wire layer bigger than under-clad layer 506 reflectivity (not show) and is deposited on composition and corrosion then on the under-clad layer 506, thereby forms an aforesaid arc optical waveguide 508.In Fig. 5 E, a top covering 510 is formed on under-clad layer 506 and the optical waveguide 508.This optical waveguide 508 is that fan-shaped circular arc or some the fan-shaped circular arcs with same radius are connected, and forms the shape of sine or cosine bending.
In Fig. 5 F, a conductive electrode 512 is formed on optical waveguide 508 and the top covering 510.In Fig. 5 G, utilize a voltage source 514, make optical waveguide 508 electric field polarizations by between conductive electrode 512 and bottom electrode 504, applying a highfield.This electric field polarization polymkeric substance has electro-optic effect.Waveguide on the latitude direction of this optical waveguide 508 is by during core-wire layer forms, and adopts a kind of dry etching method to corrode the material except optical waveguide and obtains.In this case, conductive electrode 512 preferentially with optical waveguide 508 parallel arranged so that obtain effective electric field polarization.At this, conductive electrode 512 parts can be used as a top electrode (not showing) that the external modulation signal is provided.At this a kind of alternative method that reduces reflectivity is selectively arranged, it is to do by the thing of light-absorption except optical waveguide behind the electric field polarization.In this case, need a special top electrode.
Fig. 6 A is the structure skeleton view of an a kind of polymkeric substance electrical-optical light intensity modulator of finishing to the step of Fig. 5 G by Fig. 5 A.Identical in the 5G of Ref. No. among Fig. 6 A and Fig. 5 A.
Fig. 6 B is the structure skeleton view of a ferroelectric material electrical-optical light intensity modulator.Lithium niobate (LiNbO
3) or lithium tantalate (LiTaO
3) be the ferroelectric material that is suitable for a substrate 600.A kind of monocrystal ferroelectric material substrate does not need special electric field polarization process, because it has electro-optic effect.When substrate 600 is by LiNbO
3During formation, optical waveguide 602 is to make with the method that the proton displacement mixes by the method for a kind of proton method of replacement, a kind of titanium (Ti) diffusion or the diffusion of a kind of titanium.Preferablely be, when substrate 600 is by LiTaO
3During formation, optical waveguide 602 is to adopt the method for low temperature proton method of replacement rather than the diffusion of high temperature titanium to make, because the Curie temperature of crystal approximately is 600 ℃.In the proton method of replacing, the arc optical waveguide is patterned on the substrate, and except optical waveguide other all by mask.Next, this synthetic structure is immersed in the predetermined proton source solution, proton in proton source solution and existence and on-chip lithium (Li) ion exchange, and this then composite structure is heat-treated again.In this method, a kind of crooked shape optical waveguide forms.In titanium diffusing method, this bending shape optical waveguide is patterned, and titanium is melted on the composition part, thereby the diffuse titanium element.
Optical waveguide 602 is that fan-shaped circular arc or some the fan-shaped circular arcs with same radius are connected, and forms the shape of sine or cosine curve.After this optical waveguide formed, the electrode 604 that is used to provide an external modulation signal formed and the optical waveguide parallel arranged.At this, a silicon dioxide cushion 606 is formed on the loss to avoid optical waveguide mode to produce owing to this electrode between electrode 604 and the optical waveguide 602.
Fig. 7 A is a structure skeleton view according to a kind of polymkeric substance heat of the present invention-light light intensity modulator.The light intensity modulator of Fig. 7 A comprises a silicon dioxide substrates 700, under-clad layer 702, optical waveguide 704, a top covering 706 and a microheater 708.Ref. No. 710 one of expression are used to provide the current source that electric current is given microheater 708.The manufacture method of heat-light light intensity modulator is basic identical with the manufacture method of electrical-optical light intensity modulator except being used to produce the electrical-optical coefficient.After optical waveguide 704 formed, the microheater 708 that is used to provide an external modulation signal was in parallel arranged to form with output optical waveguide 704.
Fig. 7 B is a structure skeleton view according to a kind of ferroelectric material heat of the present invention-light light intensity modulator.The light intensity modulator of Fig. 7 B comprises one by ferroelectric material such as LiNbO
3Or LiTaO
3The substrate 720 that constitutes, a kind of optical waveguide of diffusion types 722, a microheater 724 and a silicon dioxide cushion 726 that is formed between microheater 724 and the optical waveguide 722 of making by gold (Au) or chromium (Cr).Ref. No. 728 one of expression are used to provide the current source that electric current is given microheater 724.
Fig. 8 A and 8B show the structure of curved waveguide, when it adopts a kind of effective reflectivity method and a kind of difference beam propagation method digitally to simulate with box lunch, calibrate the work according to photomodulator of the present invention.At this, Fig. 8 A shows that one all has four bent lightguides that circular arc is formed of 30mm radius by each, and the cross-sectional view of an optical waveguide of Fig. 8 B demonstration.In the optical waveguide shown in Fig. 8 B, the reflectivity of substrate is 1.5, and the reflectivity of optical waveguide is 1.505, and the wide and height of optical waveguide all is 5 μ m, and the optical wavelength of using is 1.55 μ m.
Fig. 9 is a figure as a result who is presented at combine digital simulation on the photomodulator with the optical waveguide shown in Fig. 8 A and the 8B.Transverse axis is represented the variation of reflectivity, and this changes owing to the normalized external modulation signal of reflection differences (reflectivity of the reflectivity-substrate of optical waveguide) with optical waveguide.Z-axis is represented the flux of light wave.Dotted line is represented the result of a conventional photomodulator, and solid line is represented the result according to photomodulator of the present invention.As shown in Figure 9, for photomodulator according to the present invention, the optical modulation degree of depth of about 20dB can obtain from the reflectance varies corresponding to the reflection differences 50% that only accounts for optical waveguide.Yet, be merely able to obtain the optical modulation degree of depth of 0.94dB for conventional photomodulator.
According to the present invention, big depth of modulation can only utilize the radiation loss characteristic of arc waveguide to obtain from little reflectance varies.Also have, because do not need here to excise optical waveguide fully, so an initial light waveguide can be set to a good boot state.Therefore, the insertion loss is little, and driving voltage is low.
Claims (17)
1. a light intensity modulator comprises:
The substrate that predetermined material is made;
One is formed on on-chip optical waveguide with arcuate shape; And
An electrode that is formed on the optical waveguide with the optical waveguide parallel arranged,
It is characterized in that the refractive index of this optical waveguide changes along with the electric field intensity that imposes on electrode, and because the change of refractive index, the light wave of a predetermined position by optical waveguide is radiated on the substrate.
2. light intensity modulator according to claim 1, the material that it is characterized in that described substrate are the electrical-optical materials that a kind of its refractive index changes with the intensity that applies electric field.
3. light intensity modulator according to claim 1, the material that it is characterized in that described substrate heat-luminescent material that to be a kind of its refractive index change corresponding to the heating of electrode according to the intensity that applies electric field.
4. light intensity modulator according to claim 1 is characterized in that working as n
EffWhen representing the refractive index variable of optical waveguide, n
1During the refractive index of expression substrate, and R is when representing the radius of this arc, precalculated position x in optical waveguide
rBe along with R and n
EffAnd the position that changes is described as the following formula:
5. light intensity modulator according to claim 1 is characterized in that described electrode comprises that also one group of electrode at dual-side is so that use a horizontal component of electric field element.
6. a light intensity modulator comprises:
One is formed on on-chip under-clad layer with predetermined material;
One has the optical waveguide that a kind of material bigger than under-clad layer refractive index forms, and this optical waveguide is formed on under-clad layer with arcuate shape;
A top covering that forms with the under-clad layer material is with the protection optical waveguide; And
An electrode that is formed on the top covering with the optical waveguide parallel arranged,
It is characterized in that the refractive index of this optical waveguide changes along with the electric field intensity that imposes on electrode, and because the change of refractive index, the light wave of a predetermined position by optical waveguide is radiated on the substrate.
7. light intensity modulator according to claim 6, the material that it is characterized in that described substrate are the electrical-optical materials that a kind of its refractive index changes with the intensity that applies electric field.
8. light intensity modulator according to claim 6, the material that it is characterized in that described substrate heat-luminescent material that to be a kind of its refractive index change according to the heating of electrode according to the intensity that applies electric field.
9. light intensity modulator according to claim 6 is characterized in that working as n
EffWhen representing the refractive index variable of curved waveguide, n
1When representing the refractive index of substrate, and R represents the radius of this arc, precalculated position x in optical waveguide
rBe corresponding to R and n
EffAnd the position that changes is described as the following formula:
10. light intensity modulator according to claim 6 is characterized in that described electrode comprises that also a plurality of electrodes at dual-side are so that use the element of a horizontal component of electric field.
11. a method of making light intensity modulator is characterized in that, may further comprise the steps:
Under-clad layer of deposit is on a substrate;
The core-wire layer that one of deposit has refractive index greater than the under-clad layer refractive index;
Form an arc optical waveguide and corrode this core-wire layer by this core-wire layer of composition according to this pattern;
The top covering of one of deposit and under-clad layer same material is with the protection optical waveguide; And
On top covering, form a polarized electrode with the optical waveguide parallel arranged so that utilize this optical waveguide of electric field polarization, and form one and be used for applying the top electrode of external modulation signal on polarized electrode.
12. method according to claim 11 is characterized in that also being included in the loss of cushion of formation to avoid optical waveguide mode to produce owing to electrode between covering and the top electrode.
13. a method of making light intensity modulator is characterized in that may further comprise the steps:
Arc optical waveguide of composition on a substrate;
Cover except other all parts along the optical waveguide part of this pattern, this mask structure is immersed in a kind of proton source solution, and in proton source solution, carry out the proton displacement with the ion that is present in the substrate;
For forming crooked shape optical waveguide by the described composite structure of thermal treatment preset time; And
On this bending shape optical waveguide, form an electrode.
14. method according to claim 13 is characterized in that also being included in bent lightguide and forms the loss of cushion of formation to avoid optical waveguide mode to produce owing to electrode between step and the electrode formation step.
15. a method of making light intensity modulator is characterized in that may further comprise the steps:
Arc optical waveguide of composition on a substrate;
By predetermined material is melted on the bent lightguide of composition, and spreads described material and form this arc optical waveguide to the bent lightguide of composition; And
On the arc optical waveguide, form an electrode.
16. method according to claim 15 is characterized in that the described predetermined material that is used in the bent lightguide formation step is a titanium.
17. method according to claim 13 also is included in bent lightguide and forms the loss of cushion of formation to avoid optical waveguide mode to produce owing to electrode between step and the electrode formation step.
Priority Applications (1)
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| CN 99109289 CN1240945A (en) | 1998-06-26 | 1999-06-25 | Optical intensity modulator and fabrication method therefor |
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| KR98-24411 | 1998-06-26 | ||
| CN 99109289 CN1240945A (en) | 1998-06-26 | 1999-06-25 | Optical intensity modulator and fabrication method therefor |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103376569A (en) * | 2012-04-26 | 2013-10-30 | 鸿富锦精密工业（深圳）有限公司 | Electro-optical modulator |
| CN103424895A (en) * | 2012-05-21 | 2013-12-04 | 鸿富锦精密工业（深圳）有限公司 | Electro-optical modulator |
| CN104749800A (en) * | 2013-12-27 | 2015-07-01 | 华为技术有限公司 | Modulator and optical module |
| CN103135262B (en) * | 2011-12-02 | 2017-06-23 | 塞莱斯系统集成公司 | Electric light single side-band modulator and its operating method |
-
1999
- 1999-06-25 CN CN 99109289 patent/CN1240945A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103135262B (en) * | 2011-12-02 | 2017-06-23 | 塞莱斯系统集成公司 | Electric light single side-band modulator and its operating method |
| CN103376569A (en) * | 2012-04-26 | 2013-10-30 | 鸿富锦精密工业（深圳）有限公司 | Electro-optical modulator |
| CN103424895A (en) * | 2012-05-21 | 2013-12-04 | 鸿富锦精密工业（深圳）有限公司 | Electro-optical modulator |
| CN104749800A (en) * | 2013-12-27 | 2015-07-01 | 华为技术有限公司 | Modulator and optical module |
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