CN1238936C - Near field optical stairstep type nanometer a perture laser - Google Patents
Near field optical stairstep type nanometer a perture laser Download PDFInfo
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- CN1238936C CN1238936C CN 03121943 CN03121943A CN1238936C CN 1238936 C CN1238936 C CN 1238936C CN 03121943 CN03121943 CN 03121943 CN 03121943 A CN03121943 A CN 03121943A CN 1238936 C CN1238936 C CN 1238936C
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Abstract
The present invention relates to a laser for near-field optical stairstep type nanometer apertures, which belongs to the field of near-field optics and nanotechnology. The present invention discloses the laser for near-field optical stairstep type nanometer apertures in order to overcome the disadvantages that the existing nanometer aperture laser technology has low output power and practical requirements can not be met. A film layer where nanometer apertures can be formed is coated on the emitting surface of the laser, and is provided with an emitting aperture with nanometer dimensions; the dimensions of nanometer emitting apertures gradually decrease front the incidence surface of the film layer to the emitting surface in a stairstep shape until a second wavelength small hole is formed on the emitting surface of the film layer. Compared with a general laser for nanometer apertures, the present invention improves the light through efficiency and the maximal value of output light intensity by 10 to 10 <4> times under the condition of having the same near-field spot dimensions, and the light output power is greatly improved; the present invention can be used as an active probe of the nanometer near-field optics for nanometer dimension near-field optics imaging, optical spectrum exploration, data storage, photolithography, optical operation, etc.
Description
Technical field
The invention belongs near field optic, field of nanometer technology, particularly the design of nano aperture laser.
Background technology
The nanoscale light source is that near field optic imaging, detection, near field of light spectrometer and near field of light storage system etc. are based on one of the instrument of near field optic principle, the key element in the system.The metal-coated membrane optical fiber probe that has nano aperture over past ten years is widely used.But the logical optical efficiency of optical fiber probe is very low, is generally 10
-4～10
-6
Nano aperture laser has been proposed in recent years, it is a kind of semiconductor solid state laser with nano aperture based on the near field optic principle design, is at the exit surface plating rete of existing commercial semiconductor solid state laser and opens an outgoing aperture with nano-scale thereon.This nano aperture laser as the active probe in the near-field optical systems has tangible advantage, and the metal-coated membrane optical fiber probe that its Output optical power has identical orifice size improves 10
4Doubly, logical optical efficiency surpasses 1/1000, thereby has improved signal to noise ratio and data transmission bauds.But the nano aperture that is adopted in the experiment is generally square or circular at present, and diameter is about 50～300nm, and power output is about the microwatt magnitude, still can not satisfy the requirement of actual use.
Summary of the invention
It is low to the objective of the invention is to overcome the power output that has the nano aperture laser technology, can not satisfy the deficiency of actual instructions for use, a kind of near-field optical nano aperture laser with special nanoscale notch cuttype aperture is proposed, improve logical optical efficiency, realize the unification of high-resolution and high-output power.
The invention provides a kind of near field optic notch cuttype nano aperture laser, described laser emitting surface is coated with the rete that can form nano aperture, the outgoing aperture that has a nano-scale on the described rete, it is characterized in that: the size in described nanometer outgoing aperture is reducing gradually of notch cuttype from the incidence surface of described rete to exit surface, up to the aperture that forms a sub-wavelength at the exit surface of described rete.
The ladder number of nano aperture of the present invention is 2～10.
The thickness of rete of the present invention is 20～300nm.
Being shaped as of nano aperture of the present invention is square, a kind of in rectangle, circle, ellipse, triangle, double triangle, Contraband shape, worker's shape, semi-round ring shape or the C shape; Also can be two kinds and the notch cuttype nano aperture of the combined formation of two or more shapes in square, rectangle, circle, ellipse, triangle, double triangle, Contraband shape, worker's shape, semi-round ring shape or the C shape.
Laser of the present invention is edge transmitting type semiconductor laser or surface emitting type semiconductor laser.
The material of rete of the present invention is a metal material, and the material of described metallic diaphragm is a kind of in gold, aluminium, silver or the chromium furtherly.
Can be open space in the notch cuttype nano aperture of the present invention, also can fill the dielectric material of various refractive indexes, especially high index of refraction.By filling the dielectric material of high index of refraction, can also further improve logical optical efficiency.
Operation principle of the present invention is based on the local fields enhancement effect of near field optic.The logical optical efficiency (for whole power outputs and ratio greater than the whole incident optical powers in pore diameter range 600nm * 600nm square region) that is embodied in designed notch cuttype nano aperture laser is greater than 1, this shows that the energy that necessarily has outside the physical dimension of aperture has passed through the aperture, has strengthened power output.The generation of this near field optic local fields enhancement effect mainly is: when beam propagation during to the distance of near field, be subjected to the strong effect of nano aperture on the metal film, its light distribution changes to some extent, strengthens greatly in aperture area; After entering the aperture, light beam is subjected to the strong humidification of metal aperture edge, hole wall especially, and especially outstanding with the effect of the perpendicular edge of incident light polarization direction, hole wall; When light beam is subjected to the effect of boundary condition sudden change during from the aperture outgoing equally and shows as the enhancing of evanscent field and increase and decay rapidly with distance.This enhancement effect is constrained in the near field range consumingly.The process that this excitation strengthens shows: very strong interaction can take place in incident beam and nano aperture near field range, no matter is before the incident or after the outgoing.This effect is usually expressed as interaction, and promptly the aperture makes a difference to the distribution of light, produces enhancement effect in the local fields; The energy of light beam produces the vibration of excitation formation surface plasma to the metallic diaphragm in aperture simultaneously, has further strengthened local fields conversely.In addition, the notch cuttype nano aperture has constantly enhancing, collecting action to light.Above-mentioned field enhancement effect is subjected to the influence of factors such as the geometry in the optical characteristics of metallic diaphragm and thickness, aperture and size, metallic film surface plasma effect, incident light polarization direction.Wherein, contribution is maximum is summed up as polarization enhancement effect and resonance enhancement.Polarization enhancement effect and boundary condition are closely related, are actually a kind of boundary effect.It shows as distribution and logical optical efficiency that different polarization modes will influence the near field hot spot, and the raising of logical optical efficiency depends on the aperture size vertical with the incident light polarization direction consumingly.Resonance enhancement comprises the interference reinfocing effect of surface plasma enhancement effect and aperture scattered field, and is closely related with the geometry and the aperture size in aperture.
Notch cuttype nano aperture laser of the present invention can be taked dual mode on manufacture craft, the first is when being open space in the notch cuttype aperture, can the aperture of notch cuttype will progressively be processed earlier attached to the metal film on the substrate, again itself and nano aperture laser outgoing end face are combined, remove the substrate layer of adhesion metal film at last; It two is when filling other dielectric material in the notch cuttype aperture, can be at outgoing end face elder generation this dielectric material of evaporation of semiconductor laser, adopt method such as ion beam etching that this dielectric material is made into the shape of shoulder hole again, at last again deposited metal film to equal with medium holes.
The logical optical efficiency of nano aperture laser of the present invention and output intensity maximum are under the situation with identical near field of light spot size, and the identical shaped nano aperture laser that has of more common non-notch cuttype has improved 10～10
4Doubly, resulting logical optical efficiency is greater than 1.
Nano aperture laser of the present invention can be used as nanometer near-field optics active probe and is used for the imaging of nanoscale near field optic, spectrographic detection, storage, photoetching, optical manipulation etc.Based on integrated optics technique, adopt nano aperture laser can make the active optics probe of novel near field optic storage read-write head or NFM.
Description of drawings
Fig. 1 is the structural representation of general nano aperture laser.
Fig. 2 is the computation model schematic diagram of the aperture on the infinitely great metal screen.
Fig. 3 has the schematic cross-section of square notch cuttype nano aperture for embodiments of the invention one.
Fig. 4 has the cross-sectional schematic of square notch cuttype nano aperture for embodiments of the invention one.
Fig. 5 a is the light distribution schematic diagram of the laser emitting light of present embodiment one along x direction electric field component.
Fig. 5 b is the light distribution schematic diagram of the laser emitting light of present embodiment one along y direction electric field component.
Fig. 5 c is the light distribution schematic diagram of the laser emitting light of present embodiment one along z direction electric field component.
Fig. 5 d is the light distribution schematic diagram of the laser emitting light resultant field of present embodiment one.
Fig. 6 has the schematic cross-section of leg-of-mutton notch cuttype nano aperture for embodiments of the invention two.
Fig. 7 has the cross-sectional schematic of leg-of-mutton notch cuttype nano aperture for embodiments of the invention two.
Fig. 8 a is the light distribution schematic diagram of the laser emitting light of present embodiment two along x direction electric field component.
Fig. 8 b is the light distribution schematic diagram of the laser emitting light of present embodiment two along y direction electric field component.
Fig. 8 c is the light distribution schematic diagram of the laser emitting light of present embodiment two along z direction electric field component.
Fig. 8 d is the light distribution schematic diagram of the laser emitting light resultant field of present embodiment two.
Fig. 9 has the schematic cross-section of notch cuttype nano aperture of the double triangle of tip to tip for embodiments of the invention three.
Figure 10 a is the light distribution schematic diagram of the laser emitting light of present embodiment three along x direction electric field component.
Figure 10 b is the light distribution schematic diagram of the laser emitting light of present embodiment three along y direction electric field component.
Figure 10 c is the light distribution schematic diagram of the laser emitting light of present embodiment three along z direction electric field component.
Figure 10 d is the light distribution schematic diagram of the laser emitting light resultant field of present embodiment three.
Embodiment
Be described in detail as follows in conjunction with three embodiment of the present invention and accompanying drawing:
Fig. 1 is the structural representation of general nano aperture laser.Nano aperture laser is to be made on the existing commercial semiconductor solid state laser basis of (comprising limit emission and surface emitting type).General nano aperture laser comprises p N-type semiconductor N material layer 1, active region 2, and n N-type semiconductor N material layer 3 is used as the bonding jumper 4 of electrode, has the layer of dielectric material 5 of the double action of insulation and phase matched.Metal-plated membrane 7 on the light exit surface of this semiconductor solid state laser, open a nano-scale aperture 6 in metal film 7 surfaces of active region 2 correspondences, the making of nano-scale aperture can be adopted method processing such as focused ion beam (FIB) etching, chemical etching, photoetching.
For the near field of light field distribution of nano aperture laser, can adopt the computation model of the aperture on the infinitely great metal screen shown in Figure 2, utilize the Finite Difference-Time Domain separating method to carry out simulation calculation.The light beam that hypothesis is vibrated in the laser resonant cavity in the calculating presents directional light 8 characteristics, has only segment beam can see through metal film micropore 10 on the light output end face of laser.Select the material of gold as metallic diaphragm 9 for use, the vacuum wavelength of selecting light for use is the axial incident of the infinitely great even plane of polarization ripple of 633nm along aperture, and the plane of incidence is the xoz plane.Each component of electric field is respectively E
y=E
z=0, E
x=1V/m, promptly incident light is the TM mould, has only along the component of x direction.Therefore, incident intensity is uniformly, is 1, can compare with the result of calculation of each embodiment of back.The three dimensions that is calculated is divided into N
x* N
y* N
zIndividual grid cell array, the length of each unit on reference axis is respectively Δ x, Δ y, Δ z.Get Δ x=Δ y=Δ z=5nm, computer memory is N
x=N
y=200, N
z=80.
Various embodiments of the present invention all adopt gold as film material.
Embodiments of the invention one are square notch cuttype hole nano aperture laser, and its aperture sectional view and physical dimension are as shown in Figure 3, Figure 4.One square notch cuttype aperture 16 is arranged on the metallic diaphragm 11 on the light exit surface, is open space in the aperture.When the laser works wavelength is 633nm, by optimal design, the physical dimension of square shoulder hole is described below, its aperture is divided into four ladders, the length of side of every ladder upper aperture 15,14,13,12 reduces to exit surface gradually from the incidence surface of metallic diaphragm, be respectively D4=400nm, D3=300nm, D2=200nm, D1=70nm, their center overlaps, and the thickness of metal film is 20nm on every ladder.Adopt computation model shown in Figure 2, utilize the Finite Difference-Time Domain separating method to carry out simulation calculation, the distribution that can obtain all directions electric field component of square shoulder hole nano aperture laser output light field on the plane of range aperture film surface 35nm is respectively shown in Fig. 5 a, Fig. 5 b, Fig. 5 c, Fig. 5 d.Fig. 5 a, Fig. 5 b, Fig. 5 c, Fig. 5 d are respectively x, y, z durection component | E
x|
2, | E
y|
2, | E
z|
2And resultant field | E
t|
2Distribution.Can it is evident that from these a few width of cloth figure optical field distribution of square shoulder hole nano aperture laser in near-field region presents following characteristics: (1) | E
y|
2Much smaller than | E
t|
2, mainly be distributed on four angles in shape aperture, outgoing end face top; Four hot spots that present symmetry distribute.(2) | E
z|
2Component has caused total electric field the field distribution characteristic that the edge strengthens to occur in measurement plane.| E
z|
2Component results from the square aperture and the x direction, i.e. the vertical edge of incident light polarization direction, in cross section | E
z|
2Form two hot spots that independently are symmetrical in the y axle, show clearly field enhancement effect at aperture edge, its size is smaller slightly than the component of x direction.(3) at resultant field | E
t|
2In, the distribution in the pore diameter range is with | E
x|
2Be main, but | E
z|
2Also can produce bigger influence to the resultant field distribution shape.Distribution in the z=35nm plane can find out, this moment resultant field be distributed as an ellipse light spot owing to be subjected to z to the influence that strengthens, not only overall strength increases, and the distribution of resultant field and | E
x|
2Distribution compare, wideer slightly in the x direction.The x, the strong halfwidth of y direction glazing that obtain square opening notch cuttype nano aperture laser hot spot on the plane of range aperture film surface 35nm are respectively 147nm, 84nm, and intensity maxima is 213.16 on the exit facet 5nm plane, and logical optical efficiency is 1.3431.As can be seen, the intensity maxima of square shoulder hole has obtained great enhancing, logical simultaneously optical efficiency has improved a lot, and under the situation with identical near field of light spot size, more common non-notch cuttype square opening or circular hole nano aperture laser have improved two orders of magnitude.The logical optical efficiency of square shoulder hole is greater than 1, and this shows that the whole luminous powers that see through aperture exceed the whole incident optical powers in the aperture physical area, illustrate that the aperture physical boundary also can see through aperture with the light energy of exterior domain, has produced the local fields enhancement effect.In addition, find in calculating that if increase the ladder number, output intensity will have further raising, will decrease, so in practicality, should optimize aperture design according to concrete needs but lead to optical efficiency.
Embodiment two is a triangle shoulder hole nano aperture laser, its aperture sectional view such as Fig. 6, shown in Figure 7.One triangle shoulder hole 22 is arranged on the metallic diaphragm 17 on the light exit surface, is open space in the aperture.When the laser works wavelength is 633nm, by optimal design, the physical dimension of triangle shoulder hole is described below, its aperture is divided into four ladders, the bottom side length of delthyrium 21,20,19,18 reduces to exit surface gradually from the incidence surface of metallic diaphragm on every ladder, be respectively 400nm, 300nm, 200nm, 70nm, the drift angle of its isosceles triangle is 53 degree, and their center overlaps.The thickness of metal film is 20nm on every ladder.Adopt computation model shown in Figure 2, utilize the Finite Difference-Time Domain separating method to carry out simulation calculation, the distribution that can obtain all directions electric field component of triangle shoulder hole nano aperture laser light field on the plane of range aperture film surface 35nm is respectively shown in Fig. 8 a, Fig. 8 b, Fig. 8 c, Fig. 8 d.Fig. 8 a, Fig. 8 b, Fig. 8 c, Fig. 8 d are respectively x, y, z durection component | E
x|
2, | E
y|
2, | E
z|
2And resultant field | E
t|
2Distribution.Can it is evident that from these a few width of cloth figure distribution of triangle shoulder hole nano aperture laser in near-field region presents following characteristics: (1) | E
y|
2Much smaller than | E
t|
2, mainly be distributed in the drift angle place in triangle aperture; Presenting four hot spots that are symmetrical in the y axle distributes.(2) | E
z|
2Component has caused total electric field the field distribution characteristic that the edge strengthens to occur in measurement plane.| E
z|
2Component results from the triangle aperture and the x direction, i.e. the edge of incident light polarization direction vertical (being similar to), in cross section | E
z|
2Form two hot spots that independently are symmetrical in the y axle, show clearly field enhancement effect at aperture edge, its size is smaller slightly than the component of x direction.(3) at resultant field | E
t|
2In, the distribution in the pore diameter range is with | E
x|
2Be main, but | E
z|
2Also can produce bigger influence to the resultant field distribution shape.Distribution in the z=35nm plane can find out, this moment resultant field be distributed as a class ellipse light spot owing to be subjected to z to the influence that strengthens, not only overall strength increases, and the distribution of resultant field and | E
x|
2Distribution compare, wideer slightly in the x direction.Obtain x, the strong halfwidth of y direction glazing of triangle shoulder hole nano aperture laser hot spot on the plane of range aperture film surface 35nm, be respectively 97nm, 74nm, intensity maxima is 1049.76 on the exit facet 5nm plane, and logical optical efficiency is 1.6700.As can be seen, the intensity maxima of triangle shoulder hole has obtained great enhancing, logical simultaneously optical efficiency has improved a lot, and the same non-notch cuttype square opening or circular hole nano aperture laser more common under the situation with identical near field of light spot size with square shoulder hole have improved 10
2～10
4Doubly, the delthyrium nano aperture laser of equally also more common non-notch cuttype improves a lot, and spot size changes not quite.The logical optical efficiency of triangle shoulder hole is greater than 1, and this shows that the whole luminous powers that see through aperture exceed the whole incident optical powers in the aperture physical area, illustrate that the aperture physical boundary also can see through aperture with the light energy of exterior domain, has produced the local fields enhancement effect.
Embodiment three is the double triangle shoulder hole nano aperture laser of tip to tip, and its aperture sectional view as shown in Figure 9.Wherein, the tip to tip double triangle shoulder hole of two ladders being arranged on the metallic diaphragm 23 on the light exit surface, is open space in the aperture.When the laser works wavelength is 633nm, by optimal design, the physical dimension of triangle shoulder hole is described below, its aperture is divided into two ladders, the bottom side length of delthyrium 27,26,25,24 reduces to exit surface gradually from the incidence surface of metallic diaphragm on every ladder, be respectively 200nm, 200nm, 150nm, 150nm, the drift angle of its isosceles triangle is 53 degree.The thickness of metal film is 40nm on every ladder.Adopt computation model shown in Figure 2, utilize the Finite Difference-Time Domain separating method to carry out simulation calculation, the distribution that can obtain all directions electric field component of this double triangle shoulder hole nano aperture laser light field on the plane of range aperture film surface 35nm is respectively shown in Figure 10 a, Figure 10 b, Figure 10 c, Figure 10 d.Figure 10 a, Figure 10 b, Figure 10 c, Figure 10 d are respectively x, y, z durection component | E
x|
2, | E
y|
2, | E
z|
2And resultant field | E
t|
2Distribution.The distribution that can it is evident that tip to tip double triangle shoulder hole nano aperture laser in near-field region from these a few width of cloth figure presents following characteristics: (1) | E
y|
2Much smaller than | E
t|
2, mainly be distributed in the drift angle place in tip to tip double triangle aperture; Four hot spots that present symmetry distribute.(2) | E
z|
2Component has caused total electric field the field distribution characteristic that the edge strengthens to occur in measurement plane.| E
z|
2Component results from the double triangle aperture and the x direction, i.e. the edge of incident light polarization direction vertical (being similar to), in cross section | E
z|
2Form two hot spots that independently are symmetrical in the y axle, show clearly field enhancement effect at aperture edge, its size is smaller slightly than the component of x direction.(3) at resultant field | E
t|
2In, the distribution in the pore diameter range is with | E
x|
2Be main, but | E
z|
2Also can produce bigger influence to the resultant field distribution shape.Distribution in the z=35nm plane can find out, this moment resultant field be distributed as a class ellipse light spot owing to be subjected to z to the influence that strengthens, not only overall strength increases, and the distribution of resultant field and | E
x|
2Distribution compare, wideer slightly in the x direction.The x, the strong halfwidth of y direction glazing that obtain double triangle shoulder hole nano aperture laser hot spot on the plane of range aperture film surface 35nm of tip to tip are respectively 74nm, 62nm, intensity maxima is 1075.84 on the plane, exit facet 5nm place, and logical optical efficiency is 1.2282.As can be seen, the intensity maxima of this double triangle shoulder hole has obtained great enhancing, logical simultaneously optical efficiency has improved a lot, and the same non-notch cuttype square opening or circular hole nano aperture laser more common under the situation with identical near field of light spot size with square shoulder hole have improved 10
2～10
4Doubly, two delthyrium nano aperture lasers of the tip to tip of equally also more common non-notch cuttype improve a lot, and spot size changes not quite.The logical optical efficiency of the double triangle shoulder hole of tip to tip is greater than 1, this shows that the whole luminous powers that see through aperture exceed the whole incident optical powers in the aperture physical area, illustrate that the aperture physical boundary also can see through aperture with the light energy of exterior domain, has produced the local fields enhancement effect.
Claims (9)
1. near field optic notch cuttype nano aperture laser, described laser emitting surface is coated with the rete that can form nano aperture, the outgoing aperture that has a nano-scale on the described rete, it is characterized in that: the size in described nanometer outgoing aperture is reducing gradually of notch cuttype from the incidence surface of described rete to exit surface, forms the aperture of an industry wavelength up to the exit surface at described rete.
2. nano aperture laser according to claim 1 is characterized in that: the ladder number of described nano aperture is 2～10.
3. nano aperture laser according to claim 1 and 2 is characterized in that: the thickness of described rete is 20～300nm.
4. nano aperture laser according to claim 3 is characterized in that: being shaped as of described nano aperture is square, a kind of in rectangle, circle, ellipse, triangle, double triangle, Contraband shape, worker's shape, semi-round ring shape or the C shape.
5. nano aperture laser according to claim 3 is characterized in that: described nano aperture is two kinds and the notch cuttype nano aperture of the combined formation of two or more shapes in square, rectangle, circle, ellipse, triangle, double triangle, Contraband shape, worker's shape, semi-round ring shape or the C shape.
6. nano aperture laser according to claim 1 is characterized in that: be open space or the dielectric material of filling high index of refraction in the described notch cuttype nano aperture.
7. nano aperture laser according to claim 1 is characterized in that: described laser is edge transmitting type semiconductor laser or surface emitting type semiconductor laser.
8. nano aperture laser according to claim 1 is characterized in that: the material of described rete is a metal material
9. nano aperture laser according to claim 8 is characterized in that: the material of described metallic diaphragm is a kind of in gold, aluminium, silver or the chromium.
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|---|---|---|---|
| CN 03121943 CN1238936C (en) | 2003-04-18 | 2003-04-18 | Near field optical stairstep type nanometer a perture laser |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03121943 CN1238936C (en) | 2003-04-18 | 2003-04-18 | Near field optical stairstep type nanometer a perture laser |
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| CN1238936C true CN1238936C (en) | 2006-01-25 |
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| CN101666916B (en) * | 2008-09-05 | 2011-09-07 | 复旦大学 | Method and system for implementing focusing and tracking servo to acquire controllable sub-micron diameter laser speckle output |
| EP2936222B1 (en) * | 2012-12-18 | 2019-07-03 | Pacific Biosciences Of California, Inc. | An optical analytical device |
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