CN1237207C - Silver alloy etching solution - Google Patents
Silver alloy etching solution Download PDFInfo
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- CN1237207C CN1237207C CN 03147828 CN03147828A CN1237207C CN 1237207 C CN1237207 C CN 1237207C CN 03147828 CN03147828 CN 03147828 CN 03147828 A CN03147828 A CN 03147828A CN 1237207 C CN1237207 C CN 1237207C
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- silver alloy
- silver
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- ammonium
- etching liquid
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Abstract
The present invention relates to two etching solutions for silver alloy, wherein one etching solution comprises 1 to 60 weight portions of hydrogen peroxide, 1 to 60 weight portions of sulfuric acid, nitric acid or organic acid and 5 to 90 weight portions of water, and the other etching solution comprises 1 to 60 weight portions of an ammonium compound, 1 to 60 weight portions of the hydrogen peroxide and 0 to 96 weight portions of the water. The present invention can be used for effectively etching the silver alloy, the silver content of which exceeds 80 %, to form patterns by controlling etching speed rate. In addition, the present invention also provides a method for forming the silver alloy with patterns by using the etching liquid for silver alloy.
Description
Technical field
The invention relates to a kind of etching solution, refer to a kind of etching solution that is applicable to silver alloys especially.
Background technology
Present flat display apparatus, especially organic electro-luminescent display use the material of chromium metal as lead more.But because the resistance height of chromium metal, so the investigator is seeking to utilize the material of the lower metal of resistance as lead always.Proposal was once arranged in the past with the conductor material of silver as flat display apparatus, but because no moderately stable etching solution constituent, so utilization is not widely arranged.
For improving the usefulness of flat display apparatus, the investigator still was absorbed in the resistance value that how to reduce conductor material in recent years.Silver alloys is regarded as suitable conductor material at present, is lower than other metal because of its resistance.In addition, silver content surpasses the silver alloys more than 80%, though resistance is generally not low as if silver metal, its resistance is far below the chromium metal.Yet because silver alloys does not have suitable etching solution, so be not widely used in the gold-tinted processing procedure of wafer or panel.
The contriver whence originally in the spirit of positive invention, is urgently thought a kind of " etching liquid for silver alloy " that can address the above problem because of in this, and several times research experiment is eventually to the invention of finishing this Jiahui common people.
Summary of the invention
Main purpose of the present invention is that a kind of etching liquid for silver alloy is being provided, and surpasses silver alloys 80% or more with the formation pattern so that can be effectively in order to the etching silver content.
For reaching above-mentioned purpose, a kind of etching liquid for silver alloy of the present invention is characterized in that, comprises:
(A) hydrogen peroxide of 1 to 60 weight part;
(B) sulfuric acid of 1 to 60 weight part, nitric acid or organic acid; And
(C) water of 5 to 90 weight parts.
The ammonium thing that wherein also comprises 1 to 20 weight part.
Wherein this ammonium thing is ammonium sulfate, ammonium acetate, ammonium nitrate or ammonium hydroxide.
Wherein this organic acid is an amino acid.
Wherein comprise:
(A) hydrogen peroxide of 1 to 20 weight part;
(B) the ammonium thing of 1 to 20 weight part;
(C) amino acid of 1 to 20 weight part; And
(D) water of 5 to 90 weight parts.
Wherein this amino acid is Padil.
A kind of etching liquid for silver alloy of the present invention is characterized in that, comprises:
(A) the ammonium thing of 1 to 60 weight part;
(B) hydrogen peroxide of 1 to 60 weight part; And
(C) water of 0 to 96 weight part.
Wherein this ammonium thing is ammonium sulfate, ammonium acetate, ammonium nitrate or ammonium hydroxide.
It also comprises sulfuric acid, nitric acid or the organic acid of 1 to 10 weight part.
Wherein this organic acid is sulfocarbolic acid or acetic acid.
A kind of method that forms the silver alloys of tool pattern of the present invention is characterized in that, comprises following step:
(A) provide the substrate of a tool silver alloys:
(B) on this substrate, form at least one photoresistance and be formed with the photoresist layer of pattern by exposure; And
(C) the silver alloys surface that an etching liquid for silver alloy is coated on this substrate maybe impregnated in this etching liquid for silver alloy with the substrate of this tool silver alloys;
Wherein this etching liquid for silver alloy comprises: the hydrogen peroxide of 1 to 60 weight part; The sulfuric acid of 1 to 60 weight part, nitric acid or organic acid; And the water of 5 to 90 weight parts.
Wherein this etching liquid for silver alloy also comprises the ammonium thing of 1 to 20 weight part.
Wherein this ammonium thing is ammonium sulfate, ammonium acetate, ammonium nitrate or ammonium hydroxide.
Wherein this organic acid is an amino acid.
Wherein this etching liquid for silver alloy comprises:
(A) hydrogen peroxide of 1 to 20 weight part;
(B) the ammonium thing of 1 to 20 weight part;
(C) amino acid of 1 to 20 weight part; And
(D) water of 5 to 90 weight parts.
Wherein this amino acid is Padil.
A kind of method that forms the silver alloys of tool pattern of the present invention is characterized in that, comprises following step:
(A) provide the substrate of a tool silver alloys;
(B) on this substrate, form at least one photoresistance and be formed with the photoresist layer of pattern by exposure; And
(C) the silver alloys surface that an etching liquid for silver alloy is coated on this substrate maybe impregnated in this etching liquid for silver alloy with the substrate of this tool silver alloys;
Wherein this etching liquid for silver alloy comprises: the ammonium thing of 1 to 60 weight part;
The hydrogen peroxide of 1 to 60 weight part; And the water of 0 to 96 weight part.
Wherein this ammonium thing is ammonium sulfate, ammonium acetate, ammonium nitrate or ammonium hydroxide.
Wherein this etching liquid for silver alloy also comprises sulfuric acid, nitric acid or the organic acid of 1 to 10 weight part.
Wherein this organic acid is sulfocarbolic acid or acetic acid.
Because the present invention forms novelty, can provide on the industry and utilize, and truly have the enhancement effect, so apply for patent of invention in accordance with the law.
Embodiment
For allowing the auditor can more understand technology contents of the present invention, preferable with etching solution especially exemplified by silver alloys
Specific embodiment is described as follows.
Embodiment 1-8
Hydrogen peroxide and nitric acid are allocated solution according to the ratio of following table 1, and add the etching solution that entry to 100 gram is configured to following concentration.One silicon substrate with silver alloy film is by rotary coating, with photoresist layer coating thereon; Wherein this silver alloy film is formed on the silicon substrate according to the method for sputter, and comprises the silver more than 98%, 0.9% palladium and 1.0% above copper.Subsequently the silicon substrate exposure is formed with the photoresist layer of pattern; Again this silicon substrate is applied or impregnated in the etching solution that disposes according to table 1, and carry out etch-rate and measure, the result is as shown in table 1 below.
Table 1
| Embodiment | Nitric acid (grammes per square metre) | Hydrogen peroxide (grammes per square metre) | Etch-rate (A/sec) |
| 1 | 5 | 10 | 10 |
| 2 | 5 | 15 | 11.2 |
| 3 | 15 | 10 | 8.3 |
| 4 | 15 | 15 | 26.5 |
| 5 | 15 | 25 | 32.2 |
| 6 | 15 | 50 | 107.1 |
| 7 | 30 | 25 | 25 |
| 8 | 30 | 50 | 52.6 |
After etching is finished, check that the photoresistance of silicon substrate discovery silicon substrate and pattern there is no destroyed.So this etching solution is only optionally done etching to silver alloys.
Embodiment 9-23
Hydrogen peroxide and sulfuric acid are allocated solution according to the ratio of following table 2, and add the etching solution that entry to 100 gram is configured to following concentration.One silicon substrate with silver alloy film is by rotary coating, with photoresist layer coating thereon; Wherein this silver alloy film is formed on the silicon substrate according to the method for sputter, and comprises the silver more than 98%, 0.9% palladium and 1.0% above copper.Subsequently the silicon substrate exposure is formed with the photoresist layer of pattern; Again this silicon substrate is applied or impregnated in the etching solution that disposes according to table 2, and carry out etch-rate and measure, the result is as shown in table 2 below.
Table 2
| Embodiment | Sulfuric acid | Hydrogen peroxide | Etch-rate |
| (grammes per square metre) | (grammes per square metre) | (A/sec) | |
| 9 | 30 | 5 | 5.5 |
| 10 | 30 | 10 | 41.6 |
| 11 | 30 | 15 | 33.3 |
| 12 | 25 | 5 | 5.3 |
| 13 | 25 | 10 | 15 |
| 14 | 25 | 15 | 18.8 |
| 15 | 20 | 5 | 2.9 |
| 16 | 20 | 10 | 10 |
| 17 | 20 | 15 | 27.3 |
| 18 | 10 | 10 | 6.2 |
| 19 | 10 | 15 | 3.5 |
| 20 | 10 | 30 | 4.2 |
| 21 | 8 | 50 | 9.1 |
| 22 | 2 | 30 | 11.2 |
| 23 | 0.5 | 30 | 16.6 |
After etching is finished, check that the photoresistance of silicon substrate discovery silicon substrate and pattern there is no destroyed.So this etching solution is only optionally done etching to silver alloys.
Embodiment 24-32
With hydrogen peroxide, sulfuric acid, with the ratio allotment solution of ammonium acetate according to following table 3, and add the etching solution that entry to 100 gram is configured to following concentration.One silicon substrate with silver alloy film is coated it by rotary coating with a photoresist layer; : wherein this silver alloy film is formed on the silicon substrate according to the method for sputter, and comprises the silver more than 98%, 0.9% palladium and 1.0% above copper.Subsequently the silicon substrate exposure is formed with the photoresist layer of pattern; Again this silicon substrate is applied or impregnated in the etching solution that disposes according to table 3, and carry out etch-rate and measure, the result is as shown in table 3 below.
Table 3
| Embodiment | Hydrogen peroxide | Sulfuric acid | Ammonium acetate | Etch-rate |
| (grammes per square metre) | (grammes per square metre) | (grammes per square metre) | (go into/sec) |
| 24 | 8 | 2 | 2 | 46.15 |
| 25 | 8 | 2 | 5 | 46.15 |
| 26 | 8 | 2 | 8 | 24.19 |
| 27 | 8 | 4 | 2 | 32.25 |
| 28 | 8 | 4 | 5 | 6.31 |
| 29 | 8 | 4 | 8 | 10 |
| 30 | 8 | 3 | 2 | 14.28 |
| 31 | 8 | 3 | 5 | 54.54 |
| 32 | 8 | 3 | 8 | 28.57 |
After etching is finished, check that the photoresistance of silicon substrate discovery silicon substrate and pattern there is no destroyed.So this etching solution is only optionally done etching to silver alloys.
Embodiment 33-38
With hydrogen peroxide, Padil, with the ratio allotment solution of ammonium sulfate according to following table 4, and add the etching solution that entry to 100 gram is configured to following concentration.One silicon substrate with silver alloy film is by rotary coating, with photoresist layer coating thereon; Wherein this silver alloy film is formed on the silicon substrate according to the method for sputter, and comprises the silver more than 98%, 0.9% palladium and 1.0% above copper.Subsequently the silicon substrate exposure is formed with the photoresist layer of pattern; Again this silicon substrate is applied or impregnated in the etching solution that disposes according to table 4, and carry out etch-rate and measure, the result is as shown in table 4 below.
Table 4
| Embodiment | Hydrogen peroxide | Ammonium sulfate | Padil | Etch-rate |
| (grammes per square metre) | (grammes per square metre) | (grammes per square metre) | (go into/sec) | |
| 33 | 5 | 5 | 1 | 33.3 |
| 34 | 5 | 5 | 3 | 21.42 |
| 35 | 5 | 8 | 1 | 46.15 |
| 36 | 5 | 8 | 3 | 27.27 |
| 37 | 5 | 2 | 1 | 29.41 |
| 38 | 5 | 2 | 3 | 16.66 |
After etching is finished, check that the photoresistance of silicon substrate discovery silicon substrate and pattern there is no destroyed.So this etching solution is only optionally done etching to silver alloys.
Embodiment 39-46
Hydrogen peroxide and ammonium hydroxide are allocated solution according to the ratio of following table 5, and add the etching solution that entry to 100 gram is configured to following concentration.One silicon substrate with silver alloy film is by rotary coating, with photoresist layer coating thereon; Wherein this silver alloy film is formed on the silicon substrate according to the method for sputter, and comprises, the silver more than 98%, 0.9% palladium and 1.0% above copper.Subsequently the silicon substrate exposure is formed with the photoresist layer of pattern; Again this silicon substrate is applied or impregnated in the etching solution that disposes according to table 5, and carry out etch-rate and measure, the result is as shown in table 5 below.
Table 5
| Embodiment | Ammonium hydroxide | Hydrogen peroxide | Etch-rate | Etching period |
| (grammes per square metre) | (grammes per square metre) | (go into/sec) | (SeC) | |
| 39 | 7.5 | 7.5 | 63.8 | 47 |
| 40 | 6 | 6 | 60 | 50 |
| 41 | 5 | 5 | 20 | 150 |
| 42 | 4 | 4 | 8.8 | 340 |
| 43 | 50 | 50 | 2000 | 1.5 |
| 44 | 50 | 25 | 1500 | 2 |
| 45 | 25 | 50 | 2000 | 1.5 |
| 46 | 25 | 25 | 1200 | 2.5 |
Embodiment 47-61
With hydrogen peroxide, ammonium hydroxide, with the ratio allotment solution of sulfocarbolic acid according to following table 6, and add the etching solution that entry to 100 gram is configured to following concentration.One silicon substrate with silver alloy film is by rotary coating, with photoresist layer coating thereon; Wherein this silver alloy film is formed on the silicon substrate according to the method for sputter, and comprises the silver more than 98%, 0.9% palladium and 1.0% above copper.Subsequently the silicon substrate exposure is formed with the photoresist layer of pattern; Again this silicon substrate is applied or impregnated in the etching solution that disposes according to table 6, and carry out etch-rate and measure, the result is as shown in table 6 below.
Table 6
| Embodiment | Ammonium hydroxide | Hydrogen peroxide | Sulfocarbolic acid | Etch-rate | Etching period |
| (grammes per square metre) | (grammes per square metre) | (grammes per square metre): A/sec) | (SeC) | ||
| 47 | 7 | 7 | 3 | 100 | 30 |
| 48 | 5 | 5 | 3 | 27.5 | 109 |
| 49 | 3 | 3 | 3 | 13.6 | 220 |
| 50 | 7 | 7 | 2 | 81 | 37 |
| 51 | 5 | 5 | 2 | 22.9 | 131 |
| 52 | 3 | 3 | 2 | 13.8 | 216 |
| 53 | 4 | 2 | 2 | 8.3 | 7.5 |
| 54 | 4 | 3 | 2 | 12.29 | 13.04 |
| 55 | 4 | 4 | 2 | 36.58 | 37.03 |
| 56 | 2 | 3 | 2 | 66.66 | 50 |
| 57 | 3 | 3 | 2 | 12 | 16.3 |
| 58 | 4 | 3 | 2 | 16 | 15 |
| 59 | 5 | 3 | 2 | 16.3 | 16 |
| 60 | 6 | 3 | 2 | 21.1 | 21.4 |
| 61 | 7 | 3 | 2 | 21.1 | 24.3 |
By last data as can be known, etching solution of the present invention can carry out etching to silver alloys effectively, and does not produce destruction for substrate.Simultaneously can be by the adjustment of time and the selection of concentration, control is to etched degree of silver alloys and speed.In addition, the manufacturing that it can be applied to micro electronmechanical, wafer or display panel substrate in conjunction with the gold-tinted processing procedure is easy to form the silver alloys of tool pattern.
In sum, no matter the present invention all is different from the feature of prior art with regard to purpose, means and effect, be " etching liquid for silver alloy ", a quantum jump.Only it should be noted that above-mentioned many embodiment give an example for convenience of explanation, the interest field that the present invention advocated should be as the criterion so that claim is described certainly, but not only limits to the foregoing description.
Claims (12)
1. an etching liquid for silver alloy is characterized in that, comprises:
(A) hydrogen peroxide of 1 to 60 weight part;
(B) sulfuric acid of 1 to 60 weight part, nitric acid or organic acid; And
(C) water of 5 to 90 weight parts.
2. etching liquid for silver alloy as claimed in claim 1 is characterized in that, wherein also comprises the ammonium thing of 1 to 20 weight part.
3. etching liquid for silver alloy as claimed in claim 2 is characterized in that, wherein this ammonium thing is ammonium sulfate, ammonium acetate, ammonium nitrate or ammonium hydroxide.
4. etching liquid for silver alloy as claimed in claim 1 is characterized in that, wherein this organic acid is an amino acid.
5. etching liquid for silver alloy as claimed in claim 2 is characterized in that, comprises:
(A) hydrogen peroxide of 1 to 20 weight part;
(B) the ammonium thing of 1 to 20 weight part;
(C) amino acid of 1 to 20 weight part; And
(D) water of 5 to 90 weight parts.
6. etching liquid for silver alloy as claimed in claim 5 is characterized in that, wherein this amino acid is Padil.
7. a method that forms the silver alloys of tool pattern is characterized in that, comprises following step:
(A) provide the substrate of a tool silver alloys:
(B) on this substrate, form at least one photoresistance and be formed with the photoresist layer of pattern by exposure; And
(C) the silver alloys surface that an etching liquid for silver alloy is coated on this substrate maybe impregnated in this etching liquid for silver alloy with the substrate of this tool silver alloys;
Wherein this etching liquid for silver alloy comprises: the hydrogen peroxide of 1 to 60 weight part; The sulfuric acid of 1 to 60 weight part, nitric acid or organic acid; And the water of 5 to 90 weight parts.
8. the method for the silver alloys of formation tool pattern as claimed in claim 7 is characterized in that, wherein this etching liquid for silver alloy also comprises the ammonium thing of 1 to 20 weight part.
9. the method for the silver alloys of formation tool pattern as claimed in claim 8 is characterized in that, wherein this ammonium thing is ammonium sulfate, ammonium acetate, ammonium nitrate or ammonium hydroxide.
10. the method for the silver alloys of formation tool pattern as claimed in claim 7 is characterized in that, wherein this organic acid is an amino acid.
11. the method for the silver alloys of formation tool pattern as claimed in claim 8 is characterized in that, wherein this etching liquid for silver alloy comprises:
(A) hydrogen peroxide of 1 to 20 weight part;
(B) the ammonium thing of 1 to 20 weight part;
(C) amino acid of 1 to 20 weight part; And
(D) water of 5 to 90 weight parts.
12. the method for the silver alloys of formation tool pattern as claimed in claim 11 is characterized in that, wherein this amino acid is Padil.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03147828 CN1237207C (en) | 2003-06-25 | 2003-06-25 | Silver alloy etching solution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03147828 CN1237207C (en) | 2003-06-25 | 2003-06-25 | Silver alloy etching solution |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200510078853 Division CN1696348A (en) | 2003-06-25 | 2003-06-25 | Etching solution for silver alloy |
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|---|---|
| CN1566400A CN1566400A (en) | 2005-01-19 |
| CN1237207C true CN1237207C (en) | 2006-01-18 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 03147828 Expired - Fee Related CN1237207C (en) | 2003-06-25 | 2003-06-25 | Silver alloy etching solution |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102363885A (en) * | 2011-10-12 | 2012-02-29 | 常州大学 | Pretreatment solution for selective stripping of silver coating and quantitative analysis of elements in silver coating |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104674220A (en) * | 2015-02-13 | 2015-06-03 | 河源西普电子有限公司 | Etching method |
| CN106281813A (en) * | 2015-05-27 | 2017-01-04 | 制理世有限责任公司 | Silver and copper clean uses cleaning solution constituent |
| CN108930037B (en) * | 2017-05-22 | 2021-02-26 | 东友精细化工有限公司 | Metal film etching liquid composition and conductive pattern forming method using the same |
| KR102639626B1 (en) * | 2018-03-09 | 2024-02-23 | 동우 화인켐 주식회사 | An etchant composition for silver thin layer and an ehting method and a mehtod for fabrication metal pattern using the same |
| JP7233217B2 (en) * | 2018-12-28 | 2023-03-06 | 関東化学株式会社 | Batch etchant composition for laminated film containing zinc oxide and silver |
-
2003
- 2003-06-25 CN CN 03147828 patent/CN1237207C/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102363885A (en) * | 2011-10-12 | 2012-02-29 | 常州大学 | Pretreatment solution for selective stripping of silver coating and quantitative analysis of elements in silver coating |
| CN102363885B (en) * | 2011-10-12 | 2013-08-21 | 常州大学 | Pretreatment solution for selective stripping of silver coating and quantitative analysis of elements in silver coating |
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| Publication number | Publication date |
|---|---|
| CN1566400A (en) | 2005-01-19 |
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Granted publication date: 20060118 Termination date: 20130625 |