CN1236503C - Method and special equipment for preparing granular silicon belt - Google Patents
Method and special equipment for preparing granular silicon belt Download PDFInfo
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- CN1236503C CN1236503C CNB021344019A CN02134401A CN1236503C CN 1236503 C CN1236503 C CN 1236503C CN B021344019 A CNB021344019 A CN B021344019A CN 02134401 A CN02134401 A CN 02134401A CN 1236503 C CN1236503 C CN 1236503C
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The present invention provides a method for preparing a granular silicon belt capable of being used as the substrate material of a polycrystalline silicon thin film solar cell and a special apparatus thereof for preparing a granular silicon belt by using the method. The process flow of an invention method comprises that silicon powder is spread on a silicon powder layer on a quartz plate or a graphite plate and passes through a preheating area, a line focusing heating zone and a natural cooling area in sequence, wherein the line focusing heating zone is an optical heating area comprising two halogen tungsten lamp components which are provided with optical line focusing and reflecting covers and are arranged on the upper side and the lower side of a transmission plate. On the heating area, the silicon powder layer is melted through a line focusing area and melted silicon liquid flows into gaps among the silicon powder granules. After being naturally cooled, the melted silicon liquid is combined with the granules to form a granular silicon belt. The granular silicon belt prepared by the technology has a melted crystalloid surface, and the surface is smooth and flat and has certain mechanical strength and chemical stability. The present invention can be used as the substrate material of a solar cell and have low price.
Description
Technical field
The present invention relates to a kind of preparation method of the granular silicon belt of making the polysilicon thin-film solar battery backing material and use this method to prepare the special equipment of granular silicon belt.
Background technology
The subject matter that the development of silica-based solar cell faces always, the one, improve photoelectric conversion efficiency; The 2nd, reduce production costs.From present state of development, the founding polycrystalline silicon solar cell has reduced production cost to a certain extent, but equally with monocrystalline silicon battery has a large amount of slice loss, is difficult to reduce production costs significantly; Though the amorphous silicon membrane battery has remarkable advantages on cost, the light fatigue effect has seriously restricted its development space.Studies show that the photoelectric conversion efficiency of polycrystalline silicon thin film solar cell can be near monocrystalline silicon battery, and has the characteristics of stable performance, prepares polycrystal silicon cell on the inexpensive substrate material, can reduce production costs significantly, is suitable for large-scale production.With regard to present technical development, the preparation of inexpensive substrate material is the key issue that must at first solve.Backing material generally is by preparation chunk polysilicon material at present, be cut to flaky material again, chunk polysilicon is except the preparation cost height, be cut to sheet and can cause considerable damage, this is to cause the substrate cost high and can't reduce the major reason of polycrystalline silicon thin film solar cell production cost.
Summary of the invention
The objective of the invention is to propose a kind of method for preparing granular silicon belt cheaply, the granular silicon belt that obtains like this can be avoided the loss that causes owing to section through reaching the requirement as the polysilicon thin-film solar battery substrate after the chemical treatment.
The basic principle of the inventive method is to make the silicon powder surface fusing by the optics heating, and the melted silicon seepage flow after the fusion is to the silicon powder particle gap, and the cooling back forms the banded silicon that one side still can be recognized original silicon particle shape attitude, promptly so-called granular silicon belt.
The preparation technology that the present invention adopts may further comprise the steps:
(1) silica flour is tiled on quartz plate or the graphite cake forms silicon powder layer;
(2) under inert gas shielding, silicon powder layer is preheated, pre-heating temperature is 400-800 ℃;
(3) it is molten to make silicon powder layer after preheating carry out the focal zone with basic even velocity by the line focus thermal treatment zone that inert gas shielding arranged, and makes the silicon powder surface fusing, and the line focus temperature is controlled at 1420-1480 ℃;
(4) make the silicon ribbon natural cooling, promptly form granular silicon belt.
In the methods of the invention, the form that is used to prepare the silica flour of granular silicon belt can select to have the spherical of good fluidity or near spherical silica flour, the silicon powder particle diameter is advisable with 50-600 μ m, preferably select for use the silicon powder particle diameter at the 200-600 mu m range, can make the silicon ribbon surface have evenness and surface quality preferably like this.
In (1) step of this method, the thickness of the formed silicon granulosa of may command is in 1-3mm left and right sides scope, so that the silicon ribbon that makes has suitable thickness.
For preventing that in the silicon ribbon preparation process silicon of fusion is bonded in (quartz plate or graphite cake) on the support plate under the high temperature, can and between as the quartz plate of supporting bracket or graphite cake (can spray onboard) one deck main component be set at silicon powder layer is Al
2O
3Or CrO
2Or the separator of BN.
In (3) step, the said line focus thermal treatment zone is adopted from both sides up and down silicon powder layer is carried out the molten heating in line focus district.In the scope of speed-controllable below 200mm/min that melt the focal zone, preferably be controlled at about 30mm/min.
Be used to realize the preparation method's of the granular silicon belt of the present invention technical scheme of device, it is characterized in that having a mechanical transmission mechanism and can drive and the level quartz or the graphite transmission board of transmission forward by this mechanism, on the transmission path of transmission board by front and back set gradually charging hopper in proper order, preheat the district, the line focus thermal treatment zone and natural cooling district; Said preheat the district by be arranged at respectively transmission board up and down two row's non-focusing halogen tungsten fluorescent tubes of both sides constitute; The said line focus thermal treatment zone by be arranged at respectively transmission board up and down two halogen tungsten fluorescent tube assemblies that have optical line focus reflection cover of both sides form.
The halogen tungsten fluorescent tube assembly that has optical line focus reflection cover of the said line focus thermal treatment zone, its optical line focus reflection cover adopts bielliptic(al) shape reflection lampshade, there are 4 halogen tungsten fluorescent tubes to be arranged at the focal position of bielliptic(al) shape reflection lampshade respectively, also have the 4 halogen tungsten fluorescent tubes of propping the assistant heating effect to be arranged at the interior non-focal position of bielliptic(al) shape reflection lampshade.
Process with this device preparation granular silicon belt is:
(1) reinforced and transmission: the silicon grain is tiled in as on quartz plate that supports or the graphite cake by charging hopper, transfers to by mechanical transmission mechanism and preheat the district;
(2) preheat the district under inert gas shielding, silicon powder layer is preheated degasification and evaporation low melting point impurity, transfer to the line focus thermal treatment zone then;
(3) in the line focus thermal treatment zone, under inert gas shielding, the tungsten halogen lamp of silicon powder layer by having the line focus reflector carries out the heating of wire district from both sides up and down, makes the silicon powder surface fusing, the speed of growth of the transmission speed control silicon ribbon crystal by the control connecting gear.
(4) the silicon ribbon crystal of Sheng Chenging continues to transfer to the cooling zone, forms granular silicon belt.
Whole process is carried out continuously.
The present invention proposes a kind of method for preparing so-called granular silicon belt, the silicon ribbon surfacing that this method is prepared, the silicon ribbon surface can reach the requirement as the substrate of solar cell polysilicon epitaxial film deposition after the process chemical treatment, be a kind of backing material of cheapness, can reduce the production cost of polycrystalline silicon thin film solar cell significantly.The method and apparatus of preparation granular silicon belt of the present invention adopts the optics heating.Be convenient to focus on, realize the heating of directed location, do not have radiation pollution, rate of heat addition height, technology is simple, and production cost is low.
Description of drawings
Fig. 1 is the structural representation of preparation granular silicon belt device;
Fig. 2 is the concrete structure figure of the thermal treatment zone among Fig. 1.
Embodiment
Embodiment
Present embodiment adopts granular silicon belt preparation facilities as shown in Figure 1.In this device, 1 is transmission supporting bracket (making with quartz material), 2 is mechanical moving device, can drive the translation continuously forward of transmission supporting bracket 1 along continuous straight runs by this device, on the transmission path of transmission board, set gradually charging hopper 3 in proper order, preheat district 4, the line focus thermal treatment zone 5 and natural cooling district 6 by front and back; Preheat the district by be arranged at respectively transmission board up and down both sides two rows totally 8 non-focusing halogen tungsten fluorescent tubes 41,42,43,44,45,46,47,48 constitute; In the line focus thermal treatment zone by be arranged at respectively the transmission supporting bracket up and down two halogen tungsten fluorescent tube assemblies that have optical line focus reflection cover of both sides form, its optical line focus reflection cover 50 adopts bielliptic(al) shape reflection lampshade, have 4 halogen tungsten fluorescent tubes 51,52,53,54 to be arranged at the focal position of bielliptic(al) shape reflection lampshade 50 respectively, the 4 halogen tungsten fluorescent tubes 55,56,57,58 of propping the assistant heating effect are arranged at the non-focal position in the bielliptic(al) shape reflection lampshade 50 in addition.It preheats on the support that district and each parts of the line focus thermal treatment zone are installed in device (as shown in Figure 2).The idiographic flow of preparation granular silicon belt is: under inert gas shielding; with charging hopper 3 be with granularity 250～600 μ m spherical electron level silica flour even compact be tiled on the quartz transport supporting bracket 1; by mechanical moving device 2 silicon powder layer is successively transferred to and to preheat district, the line focus thermal treatment zone and natural cooling district, transfer rate is adjusted in 30mm/min.By regulating the width of charging hopper mouth, the thickness of control silicon powder layer is about 2mm.The temperature that preheats the district is controlled at about 600 ℃, in the line focus thermal treatment zone, by transmission board up and down two heating-up temperatures that have the molten band in the formed line focus of halogen tungsten fluorescent tube assembly district of optical line focus reflection cover of both sides be about 1420 ℃.Silicon powder layer is trivial molten through line focus heating, the melted silicon seepage flow after the fusing to silicon powder particle at interval, and behind natural cooling with particle bond together, form so-called granular silicon belt 11.The granular silicon belt surface prepared by this technology is the melting crystal shape, and be smooth smooth, has certain mechanical strength and chemical stability, is suitable for use as the backing material of solar cell.
Claims (3)
1. the preparation method of a granular silicon belt may further comprise the steps:
(1) silica flour is tiled on quartz plate or the graphite cake forms silicon powder layer;
(2) under inert gas shielding, silicon powder layer is preheated, pre-heating temperature is 400-800 ℃;
(3) it is molten to make silicon powder layer after preheating carry out the focal zone with basic even velocity by the line focus thermal treatment zone that inert gas shielding arranged, make the silicon powder surface fusing, the line focus temperature is controlled at 1420-1480 ℃, and the said line focus thermal treatment zone is from both sides up and down silicon powder layer to be carried out the molten heating in line focus district;
(4) make the silicon ribbon natural cooling, promptly form granular silicon belt,
It is characterized in that in the step 1 silicon powder layer and be Al as being provided with one deck main component between the quartz plate of supporting bracket or the graphite cake
2O
3Or CrO
2Or the separator of BN.
2. device that adopts the described granular silicon belt preparation method of claim 1, it is characterized in that having a mechanical transmission mechanism (2) and can drive and the level quartz or the graphite transmission board transmission supporting bracket (1) of transmission forward by this mechanism, on the transmission path of transmission supporting bracket by front and back set gradually charging hopper (3) in proper order, preheat district (4), the line focus thermal treatment zone (5) and natural cooling district (6); Said preheat the district by be arranged at respectively the transmission supporting bracket up and down two row's non-focusing halogen tungsten fluorescent tubes of both sides constitute; The said line focus thermal treatment zone by be arranged at respectively the transmission supporting bracket up and down two halogen tungsten fluorescent tube assemblies that have optical line focus reflection cover of both sides form.
3. device according to claim 2, it is characterized in that forming the halogen tungsten fluorescent tube assembly that has optical line focus reflection cover of the said line focus thermal treatment zone, its optical line focus reflection cover adopts bielliptic(al) shape reflection lampshade (50), there are 4 halogen tungsten fluorescent tubes (51,52,53,54) to be arranged at the focal position of bielliptic(al) shape reflection lampshade respectively, also have the 4 halogen tungsten fluorescent tubes (55,56,57,58) of propping the assistant heating effect to be arranged at the interior non-focal position of bielliptic(al) shape reflection lampshade.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021344019A CN1236503C (en) | 2002-07-19 | 2002-07-19 | Method and special equipment for preparing granular silicon belt |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021344019A CN1236503C (en) | 2002-07-19 | 2002-07-19 | Method and special equipment for preparing granular silicon belt |
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| CN1469495A CN1469495A (en) | 2004-01-21 |
| CN1236503C true CN1236503C (en) | 2006-01-11 |
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| CNB021344019A Expired - Fee Related CN1236503C (en) | 2002-07-19 | 2002-07-19 | Method and special equipment for preparing granular silicon belt |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101364619B (en) * | 2008-10-08 | 2010-08-25 | 湖南大学 | Manufacturing method for silicon thin-film solar cell |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101565852B (en) * | 2008-04-25 | 2011-10-12 | 比亚迪股份有限公司 | Crystal continuous producing device and method for continuously producing polysilicon by using same |
| CN101295749B (en) * | 2008-06-16 | 2011-07-27 | 中南大学 | Powder metallurgy metallic silicon solar battery underlay producing technique |
| CN101504960B (en) * | 2009-03-16 | 2010-06-02 | 温州竞日光伏科技有限公司 | Polycrystalline silicon solar cell manufacturing method |
| WO2011132781A1 (en) * | 2010-04-23 | 2011-10-27 | 日立化成工業株式会社 | n-TYPE DIFFUSION LAYER FORMING COMPOSITION, METHOD OF PRODUCING n-TYPE DIFFUSION LAYER, AND METHOD OF PRODUCING SOLAR CELL ELEMENT |
| CN102610519A (en) * | 2011-01-19 | 2012-07-25 | 广东中显科技有限公司 | Method for manufacturing polysilicon thin-film transistor |
| CN102270704B (en) * | 2011-07-29 | 2013-08-21 | 中国科学院长春光学精密机械与物理研究所 | Method for preparing silicon thin film of solar cell and device for realizing method |
| CN102496637A (en) * | 2011-12-21 | 2012-06-13 | 中国科学技术大学 | Solar cell with intermediate bands and photoelectric conversion film material of solar cell |
| CN103295939B (en) * | 2013-05-29 | 2016-08-24 | 中山大学 | A kind of combination type quartz glass heating chamber |
| CN113696524A (en) * | 2021-08-11 | 2021-11-26 | 苏州易锐光电科技有限公司 | Micro-nano processing method of optical device |
-
2002
- 2002-07-19 CN CNB021344019A patent/CN1236503C/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101364619B (en) * | 2008-10-08 | 2010-08-25 | 湖南大学 | Manufacturing method for silicon thin-film solar cell |
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| CN1469495A (en) | 2004-01-21 |
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Effective date of registration: 20090116 Address after: No. 135, Xingang West Road, Guangdong, Guangzhou Patentee after: Sun Yat-sen University Address before: No. 81 martyrs Middle Road, Guangdong, Guangzhou Patentee before: Guangzhou Institute of Energy Conversion, Chinese Academy of Sciences |
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Owner name: ZHONGSHAN UNIV. Free format text: FORMER OWNER: GUANGZHOU ENERGY RESOURCE INST., CHINESE ACADEMY OF SCIENCES Effective date: 20090116 |
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Granted publication date: 20060111 Termination date: 20130719 |