CN102496637A - Solar cell with intermediate bands and photoelectric conversion film material of solar cell - Google Patents

Solar cell with intermediate bands and photoelectric conversion film material of solar cell Download PDF

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Publication number
CN102496637A
CN102496637A CN2011104336728A CN201110433672A CN102496637A CN 102496637 A CN102496637 A CN 102496637A CN 2011104336728 A CN2011104336728 A CN 2011104336728A CN 201110433672 A CN201110433672 A CN 201110433672A CN 102496637 A CN102496637 A CN 102496637A
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photoelectric conversion
solar cell
atom
conversion layer
fertile material
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张振宇
崔萍
蓝海平
曾长淦
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University of Science and Technology of China USTC
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University of Science and Technology of China USTC
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention provides a solar cell with intermediate bands. The solar cell comprises a substrate, a back electrode, a complementary type film, a photoelectric conversion film material and a metal electrode, wherein the back electrode is arranged on the substrate; the complementary type film is arranged on the back electrode; the photoelectric conversion film material is arranged on the complementary type film and is a photoelectric conversion layer with the intermediate bands; and a parent material of the photoelectric conversion layer with the intermediate band is TiO2, ZnO, Si or III-V family semiconductor materials. The invention provides the solar cell and the photoelectric conversion film material forming the solar cell with high conversion efficiency, stable cell property and reasonable manufacturing cost.

Description

Solar cell and photoelectricity conversion thin film material thereof can be with in a kind of centre
Technical field
The present invention relates to a kind of solar cell and form the photoelectricity conversion thin film material of this battery, relate to a kind of solar cell that can be with (intermediate bands) in the middle of having particularly.
Background technology
Because the whole world is to the raising of the growing and environmental consciousness of energy demand, various feasible alternative clean energy resourcies are researched and developed in countries in the world always, wherein attract most attention with solar energy again.Solar energy has advantages such as inexhaustible, nexhaustible, is the human desirable clean energy resource that solves lack of energy and problem of environmental pollution.Utilizing the solar device of photoelectricity transformation principle, particularly photovoltaic cell, is the principal mode and the carrier of its using energy source.
Since the seventies in 20th century, U.S. AT&T Labs at first developed silicon solar cell, solar cell had been obtained significant progress, has polytype, and silicon solar cell, Cu (In, Ga) Se are typically arranged 2(CIGS), CdTe, Cu 2ZnSn (Se, S) 4(CZTS) hull cell and DSSC etc. such as.
The basic reason that solar energy is difficult to extensively utilize is to be subject to current device photoelectric conversion efficiency on the low side and too high manufacturing cost.Though higher like hull cell conversion efficiencies such as monocrystalline silicon battery, CIGS, there is complex process, raw material are expensive, or the bottleneck of environmental pollution.Though and that DSSC is made is simple relatively, be faced with the conversion efficiency problem with stability test on the low side.
In sum, this area lacks a kind of conversion efficiency height, battery is stable and the rational solar cell of manufacturing cost.Therefore, this area presses for that a kind of conversion efficiency of exploitation is high, battery is stable and the rational solar cell of manufacturing cost and form the photoelectricity conversion thin film material of this battery.
Summary of the invention
First purpose of the present invention is to obtain a kind of conversion efficiency height, battery is stable and the rational solar cell of manufacturing cost.
Second purpose of the present invention is to obtain a kind ofly to be used for the conversion efficiency height, battery is stable and the photoelectricity conversion thin film material of the rational solar cell of manufacturing cost.
The 3rd purpose of the present invention is to obtain a kind of photoelectricity conversion thin film preparation methods.
The 4th purpose of the present invention is to obtain the application of a kind of photoelectricity conversion thin film material of the present invention aspect the raising photoelectric conversion efficiency.
In first aspect of the present invention, provide a kind of centre can be with solar cell, said battery comprises:
Substrate;
Be located at the back electrode on the substrate;
Be located at the complementary type film on the back electrode;
Be located at the photoelectricity conversion thin film material on the said complementary type film; Wherein, said photoelectricity conversion thin film material is the photoelectric conversion layer that can be with in the middle of having; Said fertile material with the middle photoelectric conversion layer that can be with adopts TiO 2, ZnO, Si or III-V family semi-conducting material;
And
Metal electrode.
In an embodiment of the present invention, the band solar cell comprises in the middle of described middle can being with:
Substrate;
Be located at the back electrode on the substrate;
Be located at the complementary type film on the back electrode;
Be located at the photoelectricity conversion thin film material on the said complementary type film; Said photoelectricity conversion thin film material is the photoelectric conversion layer that can be with in the middle of having; Wherein said fertile material with the middle photoelectric conversion layer that can be with preferentially adopts TiO 2, also can select materials such as ZnO, Si or III-V family semiconductor; And
Metal electrode.
In an embodiment of the present invention, said fertile material with the middle photoelectric conversion layer that can be with adopts TiO 2
In an embodiment of the present invention, foreign atom or foreign atom that said fertile material with the middle photoelectric conversion layer that can be with contains 1～5 atom % are right, and said percentage is with the molar ratio computing of fertile material.
In an embodiment of the present invention, said foreign atom is the foreign atom of reciprocity or not non-compensated n-p codope.
In an embodiment of the present invention, said foreign atom is to being reciprocity or not non-compensated n-p atom pair combination.
Said " combination of n-p atom pair " also is n type and the combination of p type atom pair.
In a preference, mix n type atom donates electrons and the p type atom donate holes of fertile material, but both electron number and hole numbers of contribution are not reciprocity.
In an embodiment of the present invention, when said fertile material adopts TiO 2The time, described not reciprocity n-p atom pair combination selection Cr-N, Mo-N, W-N, Mo-P or W-P.
In an embodiment of the present invention, said have in the middle photoelectric conversion layer that can be with, and E can be with in the centre of introducing iBe positioned at the top of valence band E of its fertile material vWith E at the bottom of the conduction band cBetween.
Second aspect present invention can be with the photoelectricity conversion thin film material of solar cell in the middle of a kind of being used for is provided, and said photoelectricity conversion thin film material comprises:
The photoelectric conversion layer that can be with in the middle of having; Said fertile material with the middle photoelectric conversion layer that can be with adopts TiO 2, ZnO, Si or III-V family semi-conducting material, preferably adopt TiO 2
Foreign atom or foreign atom that said fertile material with the middle photoelectric conversion layer that can be with contains 1～5 atom % are right, and said percentage is with the molar ratio computing of fertile material;
Can be with by said foreign atom or foreign atom in the middle of said and form on the fertile material of said photoelectric conversion layer, constructing through reciprocity or not non-compensated n-p codope.
In a preference, said foreign atom is the foreign atom of reciprocity or not non-compensated n-p codope.
In a preference, said foreign atom is to being reciprocity or not non-compensated n type and the combination of p type atom pair;
Preferably, said foreign atom is to being the combination of not reciprocity n type and p type atom pair,
In a preference, mix n type atom donates electrons and the p type atom donate holes of fertile material, but both electron number and hole numbers of contribution are not reciprocity.
In a preferred example, for the fertile material TiO of preferential selection 2, the combination of not reciprocity n-p wherein (also being n type and p type) atom pair can be selected Cr-N, Mo-N, W-N, Mo-P, W-P or its combination.
In a preference, said have in the middle photoelectric conversion layer that can be with, and E can be with in the centre of introducing iBe positioned at the top of valence band E of its fertile material vWith E at the bottom of the conduction band cBetween.
In a preference, the metal of said nanometer metal structure layer adopts Ag, Al, Cu or its combination; The nanostructure that said nanometer metal structure layer adopts is nanosphere or nanometer shell.
Particularly, the size of said nanostructure is at 1-100nm.
Third aspect present invention provides a kind of described photoelectricity conversion thin film preparation methods, comprises the steps:
I), provide and be applicable to the fertile material that forms the photoelectric conversion layer that to be with in the middle of having; Said fertile material adopts TiO 2, ZnO, Si or III-V family semi-conducting material, preferably adopt TiO 2
Ii), form middle can being with by foreign atom that accounts for said fertile material 1～5 atom % or foreign atom on fertile material, constructing through reciprocity or not non-compensated n-p codope.
In a preference, said reciprocity or not non-compensated n-p codope method can adopt but the methods such as vapour deposition or liquid growth that are not limited to realize mixing of n-p foreign atom.
Fourth aspect present invention provides the application of a kind of described photoelectricity conversion thin film material aspect the raising photoelectric conversion efficiency.
In an embodiment, E can be with in described centre iThrough not reciprocity n-p codope method at TiO 2Realize on the material that E can be with in the centre of introducing iShould be positioned at film intrinsic material top of valence band E vWith E at the bottom of the conduction band cBetween; The membrane average thickness in said centre is about 1 micron.
Description of drawings
Fig. 1 is TiO 2Middle band solar cell sketch map.
Embodiment
The inventor is through extensive and deep research; Expand theory and notion; In conjunction with existing preparation technology, obtained to provide to have the centre that can realize high conversion efficiency and can be with the thin-film material solar cell, in the middle of on purpose introducing, can be with; Said solar cell can absorb the photon that significant amount of energy is lower than its band gap effectively, and then realizes higher photoelectric conversion efficiency.Accomplished the present invention on this basis.
Technical conceive of the present invention is following:
The present invention discloses a kind of wide spectrum, high efficiency solar cell, comprises the photoelectric conversion layer that can be with in the middle of having at least.The photoelectric conversion layer that can be with in the middle of wherein having is by suitable, cheap TiO 2The structure that material can be with in the middle of realizing through not reciprocity n-p codope method; Same method also can be implemented on materials such as ZnO, Si and III-V family as being with in the middle of the parent structure.
Below detail to various aspects of the present invention.Specify like nothing, various raw materials of the present invention all can obtain through commercially available; Or prepare according to the conventional method of this area.Only if definition or explanation are arranged in addition, the same meaning that all specialties used herein and scientific words and those skilled in the art are familiar with.Any in addition with the institute similar content of putting down in writing or the equalization method and material all can be applicable in the inventive method.
Said technical term can be referring to following list of references: [1] A.Luque and A.Marti, Phys.Rev.Lett.78,5014 (1997). [2] A.Luque and A.Marti, Adv.Mater. (advanced material) 22,160 (2010).
" complementary type film " of the present invention is meant, if photoelectric conversion layer is the N type, corresponding complementary type film should be a P type film; Otherwise then be the P type.Particularly, therefore said complementary type film can be with thin-film material corresponding with the centre in order to strengthen the efficient that separate in light induced electron-hole: if thin-film material can be with in the centre is the electron type conduction, and this film is then selected P-type film; If it is the cavity type conduction that thin-film material can be with in the centre, then this film is a N-type film.
Photoelectricity conversion thin film material and preparation method thereof
Can be in the middle of the present invention is provided for the photoelectricity conversion thin film material of solar cell, said photoelectricity conversion thin film material comprises:
The photoelectric conversion layer that can be with in the middle of having; Said fertile material with the middle photoelectric conversion layer that can be with adopts TiO 2, ZnO, Si or III-V family semi-conducting material, preferably adopt TiO 2
Foreign atom or foreign atom that said fertile material with the middle photoelectric conversion layer that can be with contains 1～5 atom % are right, and said percentage is with the molar ratio computing of fertile material;
Can be with by said foreign atom or foreign atom in the middle of said and form on the fertile material of said photoelectric conversion layer, constructing through reciprocity or not non-compensated n-p codope.
Said photoelectricity conversion thin film material is that the photoelectric conversion layer that can be with in the middle of having, wherein said fertile material with the middle photoelectric conversion layer that can be with preferentially adopt TiO 2Material, and fertile materials such as ZnO, Si or III-V family semiconductor are suitable for too.
In an embodiment, E can be with in described centre iNot reciprocity n-p codope is at TiO 2Realize on the material that E can be with in the centre of introducing iShould be positioned at film intrinsic material top of valence band E vWith E at the bottom of the conduction band cBetween.
In an embodiment, said foreign atom concentration of mixing is between the atomic ratio of 1-5%.
In an embodiment, the membrane average thickness in said centre is about the 1-10 micron.
In an embodiment, E can be with in described centre iNot reciprocity n-p codope is at TiO 2Realize on the material that E can be with in the centre of introducing iShould be positioned at film intrinsic material top of valence band E vWith E at the bottom of the conduction band cBetween; Said foreign atom concentration of mixing is between the atomic ratio of 1-5%; The membrane average thickness in said centre is about the 1-10 micron.
The photoelectric conversion layer that can be with in the middle of having
In a preference, said have the middle photoelectric conversion layer that can be with by suitable, cheap material TiO 2The structure that not reciprocity n-p codope method can be with in the middle of realizing; This building method is equally applicable to other fertile materials such as ZnO, Si and III-V family semiconductor etc.
In a preference, described TiO 2Contain 1～5 weight % foreign atom in the material, said percentage is with the molar ratio computing of semi-conducting material.
In a preference, said foreign atom is the foreign atom of not reciprocity n-p codope.
In a preference, said foreign atom is a kind of of not reciprocity n-p codope element Cr-N, Mo-N, W-N, Mo-P, W-P etc.。
In a preference, said have in the middle photoelectric conversion layer that can be with, and E can be with in the centre of introducing iBe positioned at the top of valence band E of its fertile material vWith E at the bottom of the conduction band cBetween.
The inventor finds that this centre can absorb lower energy photon by carrying material, expands the absorption of its intrinsic material to the solar spectral wave-length coverage, improves photoelectric conversion efficiency.
The preparation method
The present invention also provides described photoelectricity conversion thin film preparation methods, and it comprises the steps:
I), provide and be applicable to the fertile material that forms the photoelectric conversion layer that to be with in the middle of having; Said fertile material adopts TiO 2, ZnO, Si or III-V family semi-conducting material, preferably adopt TiO 2
Ii), form middle can being with by foreign atom that accounts for said fertile material 1～5 atom % or foreign atom on fertile material, constructing through reciprocity or not non-compensated n-p codope.
In a preference, said reciprocity or not non-compensated n-p codope method can adopt but the methods such as vapour deposition or liquid growth that are not limited to realize mixing of n-p foreign atom.
Solar cell and preparation method thereof can be with in the centre
Summary
Band solar cell in the middle of a kind of middle can being with of the present invention, said battery comprises:
Substrate;
Be located at the back electrode on the substrate;
Be located at the complementary type film on the back electrode;
Be located at the photoelectricity conversion thin film material on the said complementary type film; Said photoelectricity conversion thin film material is the photoelectric conversion layer that can be with in the middle of having; Wherein said fertile material and the preferential TiO that adopts cheapness with the middle photoelectric conversion layer that can be with 2Material; And
Metal electrode.
Said solar cell has the centre that can realize high conversion efficiency can be with structure, position and the width of selecting codope concentration of element, combination can be with in the middle of can optimizing, regulating and control simultaneously.Therefore, the above solar cell can be realized high efficiency power conversion.
More specifically, solar cell schematic construction of the present invention is as shown in Figure 1, and back electrode can be selected low work function metal such as Al, and can be processed into lattice-shaped structure; Introduce N type thin-film material 3, form the P-N knot with band thin-film material in the middle of the P type, the The built-in electric field helps the right separation in light induced electron-hole; Metal electrode 5 can select high work function metal such as Cu to realize low-resistance contact or ohmic contact.
Substrate
Substrate of the present invention is not specifically limited, only otherwise goal of the invention of the present invention is produced restriction to get final product.。For example can adopt various plastics, glass or stainless steel etc., but be not limited to this, can also be with reference to the cited list of references content of the present invention.
Preferably, adopt glass.
Back electrode
Back electrode of the present invention is not specifically limited, only otherwise goal of the invention of the present invention is produced restriction to get final product.For example can adopt various good conductivity, chemically stable metal such as Cu, Al etc., but be not limited to this.Can also be with reference to the cited list of references content of the present invention.
Preferably, adopt Cu.
The complementary type film
The present invention adopts the complementary type film in order to strengthen the efficient that separate in light induced electron-hole, therefore can be with thin-film material corresponding with the centre: if thin-film material can be with in the centre is the electron type conduction, and this film is then selected P-type film; If it is the cavity type conduction that thin-film material can be with in the centre, then this film is a N-type film.Other are not specifically limited, only otherwise goal of the invention of the present invention is produced restriction to get final product.For example can adopt the oxide material such as the TiO of intrinsic 2, ZnO but be not limited to this.Can also be with reference to the cited list of references content of the present invention.
Preferably, adopt intrinsic TiO 2
Metal electrode
Metal electrode of the present invention is not specifically limited, only otherwise goal of the invention of the present invention is produced restriction to get final product.For example can adopt Al, Cu, but be not limited to this.Can also be with reference to the cited list of references content of the present invention.
Preferably, adopt Al.
The present invention also provides the preparation method of described solar cell, and said method comprises the steps:
A), prepare certain thickness such as about 1 micron Al back electrode in selected substrate such as deposition on glass
B), the TiO2 film of deposition preparation certain thickness such as 1.0-5.0 micron on back electrode;
C), then at TiO 2It is right to add the impurity of codope through CVD method on the film, with the structure of realizing stablizing, being with in the middle of the high-quality.
Advantage and good effect:
Because can be with in the middle of having in the photoelectricity conversion thin film material of said solar cell, the absorbing path [1,2] of a plurality of different-energies is provided for the absorption of sunlight: electronics can absorb a high-energy photon and directly transit to conduction band from valence band; Also can make electronics promptly absorb a lower energy photon earlier and can be with in the middle of transitting to, and then absorb second lower energy photon and transit to conduction band through twice photon process.Such as, with respect to monoenergetic crack TiO 2The ideal efficiency 9.6% of battery can be with TiO in the middle of having 2The theoretical efficiency of battery then can be optimized to 56.0%.Here efficient is meant, the ratio of battery power output and the incident light energy of the suffered standard solar irradiation of battery per second.
Other aspects of the present invention are because the disclosure of this paper is conspicuous to those skilled in the art.
Below in conjunction with specific embodiment, further set forth the present invention.Should be understood that these embodiment only to be used to the present invention is described and be not used in the restriction scope of the present invention.The experimental technique of unreceipted actual conditions in the following example usually according to normal condition, or carries out according to the condition that manufacturer advises.Unless otherwise indicated, otherwise all umbers are molar part, and all percentage is atomic percent, and described polymer molecular weight is a number-average molecular weight.
Only if definition or explanation are arranged in addition, the same meaning that all specialties used herein and scientific words and those skilled in the art are familiar with.Any in addition with the institute similar content of putting down in writing or the equalization method and material all can be applicable in the inventive method.
Embodiment
To describe implementation detail of the present invention now, comprise exemplary aspect of the present invention and implement for example.Shown in Fig. 1, correlation number and following description will be explained the principal character of example embodiment.In addition, be not intended in the said legend describe each characteristic of practical embodiments or the relative size of elements depicted, and said graphic not drawn on scale.
Make said titanium dioxide and be fertile material in the middle of the basic conception of band solar cell be to go up order each layer structural material shown in Figure 1 of growing at substrate 1 (glass or plastics etc.).I.e. epitaxial growth or vapor deposition back electrode 2 on substrate, making the complementary type film above that with the epitaxial growth mode then is that N type thin-film material is (like TiO 2Or ZnO), band film 4 in the middle of the P type.
Preferred suitable reaction temperature and the time, and use suitable chemical composition and dopant to control thickness, lattice constant and electrical property in N type membrane structure layer and the middle band of the P type membrane structure.The use of CVD method (like organic metal vapour phase epitaxy (OMVPE), metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE) etc.) can so that the thin film monolithic structure that forms can grow with required thickness, element components, doping content and conductive characteristic (being N type or P type).
Use the method for sputter vapor deposition to form reliable low-resistance or ohmic contact with hanging down work function metal such as Al etc. and high work function metal such as Cu etc. and the tight bonding of oxide structure layer.
In an embodiment, substrate 1 can be selected silicon, glass, quartz, plastics, stainless steel etc.In order to obtain preferable light transmission features and lower manufacturing cost, can adopt glass or stainless steel to select for main.Back electrode 2 can be selected main technique modes such as vapour deposition method, sputtering method, galvanoplastic, print process, at the metal electrode of epitaxial thickness between 50 to 300nm on the substrate 1.Through main technique modes such as mask, electron beam exposures, can carry out the processing and the structure of nano-micro structure to back electrode 2.Adopt methods such as molecular beam epitaxy, vapour deposition, at back electrode 2 epitaxial growth N type films, thickness is between 500-1000nm.For oxide material, notice TiO 2Deng the N type electrology characteristic with intrinsic, this will reduce the complexity that technology is made.Then, on N type film further the epitaxial growth doped P-type, can be in the middle of having with the film of characteristic, thickness is between 1000-5000nm; Doping elements is selected according to system, for TiO 2Material then can be selected Cr and N, through introducing organo-metallic compound and rich nitrogen molecular such as the NH of Cr 3Deng promptly realizing codope, that can be with in the middle of having, P type TiO outside in the epitaxial growth process 2Thin layer, the codope atomic concentration is controlled between the 1-5%; And can further realize that the codope element is stable, evenly distribute through methods such as annealing, improve its electrical stability.At last, select suitable metal such as Ag or Cu, through the way realization electrode 5 of vapor deposition or sputter.
Performance embodiment
Battery of the present invention, the photoelectric conversion layer that assembling can be with in the middle of having, this makes this battery can absorb the photon of more low energy, the efficient of raising opto-electronic conversion than conventional battery (most of is single charged pool).Theoretical Calculation shows, at TiO 2After the band structure, can make photoelectric conversion efficiency be increased to 56% in the middle of introducing in the fertile material from 9.6%.Therefore, might break through the bottleneck of single charged pool, realize higher 10% or above conversion efficiency at actual battery.Here efficient is meant, the ratio of battery power output and the incident light energy of the suffered standard solar irradiation of battery per second.
The topmost spirit of the present invention is to have utilized the middle of material can be with and not reciprocity n-p codope method simultaneously.Middle can being with increases the contribution of lower energy photon to photoelectric current effectively, thereby realizes high efficiency solar cell; And not reciprocity n-p codope method effectively controlled material band structure, improve the thermodynamic solubility of fertile material, the effective structure that can be with in the middle of realizing to foreign atom.Therefore; The present invention should have other various embodiments; Under the situation of spirit of the present invention and essence; Those of ordinary skill in the art work as can make various corresponding changes, distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of appended claims of the present invention.
All documents in that the present invention mentions are all quoted as a reference in this application, are just quoted such as a reference separately as each piece document.Should be understood that in addition that after having read foregoing of the present invention those skilled in the art can do various changes or modification to the present invention, these equivalent form of values fall within the application's appended claims institute restricted portion equally.

Claims (10)

1. solar cell can be with in a centre, it is characterized in that, said battery comprises:
Substrate;
Be located at the back electrode on the substrate;
Be located at the complementary type film on the back electrode;
Be located at the photoelectricity conversion thin film material on the said complementary type film; Wherein, said photoelectricity conversion thin film material is the photoelectric conversion layer that can be with in the middle of having; Said fertile material with the middle photoelectric conversion layer that can be with adopts TiO 2, ZnO, Si or III-V family semi-conducting material;
And
Metal electrode.
2. solar cell as claimed in claim 1 is characterized in that, said fertile material with the middle photoelectric conversion layer that can be with adopts TiO 2
3. solar cell as claimed in claim 1 is characterized in that, foreign atom or foreign atom that said fertile material with the middle photoelectric conversion layer that can be with contains 1～5 atom % are right, and said percentage is with the molar ratio computing of fertile material.
4. solar cell as claimed in claim 3 is characterized in that, said foreign atom is the foreign atom of reciprocity or not non-compensated n-p codope.
5. solar cell as claimed in claim 3 is characterized in that, said foreign atom is to being reciprocity or not non-compensated n-p atom pair combination.
6. solar cell as claimed in claim 5 is characterized in that, when said fertile material adopts TiO 2The time, described not reciprocity n-p atom pair combination selection Cr-N, Mo-N, W-N, Mo-P or W-P.
7. solar cell as claimed in claim 1 is characterized in that, said have in the middle photoelectric conversion layer that can be with, and E can be with in the centre of introducing iBe positioned at the top of valence band E of its fertile material vWith E at the bottom of the conduction band cBetween.
8. one kind can is characterized in that with the photoelectricity conversion thin film material of solar cell said photoelectricity conversion thin film material comprises in the middle of being used for:
The photoelectric conversion layer that can be with in the middle of having; Said fertile material with the middle photoelectric conversion layer that can be with adopts TiO 2, ZnO, Si or III-V family semi-conducting material, preferably adopt TiO 2
Foreign atom or foreign atom that said fertile material with the middle photoelectric conversion layer that can be with contains 1～5 atom % are right, and said percentage is with the molar ratio computing of fertile material;
Can be with by said foreign atom or foreign atom in the middle of said and form on the fertile material of said photoelectric conversion layer, constructing through reciprocity or not non-compensated n-p codope.
9. a photoelectricity conversion thin film preparation methods as claimed in claim 8 is characterized in that, comprises the steps:
I), provide and be applicable to the fertile material that forms the photoelectric conversion layer that to be with in the middle of having; Said fertile material adopts TiO 2, ZnO, Si or III-V family semi-conducting material, preferably adopt TiO 2
Ii), form middle can being with by foreign atom that accounts for said fertile material 1～5 atom % or foreign atom on fertile material, constructing through reciprocity or not non-compensated n-p codope.
10. the application of photoelectricity conversion thin film material as claimed in claim 8 aspect the raising photoelectric conversion efficiency.
CN2011104336728A 2011-12-21 2011-12-21 Solar cell with intermediate bands and photoelectric conversion film material of solar cell Pending CN102496637A (en)

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WO2008051235A2 (en) * 2005-11-10 2008-05-02 The Board Of Trustees Of The University Of Illinois Silicon nanoparticle photovoltaic devices
CN101504960A (en) * 2009-03-16 2009-08-12 温州竞日光伏科技有限公司 Polycrystalline silicon solar cell manufacturing method
CN101931017A (en) * 2010-08-24 2010-12-29 江苏绿洲新能源有限公司 Solar battery with intermediate band and method for generating quantum dot structure absorbing layer

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CN104409553B (en) * 2014-11-04 2017-09-08 中国科学院半导体研究所 Carborundum Intermediate Gray solar cell and preparation method thereof

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