CN1225776C - Wafer holding system - Google Patents
Wafer holding system Download PDFInfo
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- CN1225776C CN1225776C CN 02118190 CN02118190A CN1225776C CN 1225776 C CN1225776 C CN 1225776C CN 02118190 CN02118190 CN 02118190 CN 02118190 A CN02118190 A CN 02118190A CN 1225776 C CN1225776 C CN 1225776C
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- pore
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- wafer
- groove
- bearing
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Abstract
The present invention discloses a clamping system used for supporting a workpiece, which can be applied to manufacture semiconductors. The clamping system comprises a supporting seat which is provided with an upper surface and is used for supporting a semiconductor wafer, and a plurality of air holes and grooves, wherein the air holes pass through the supporting seat and provide a channel which makes air reach the semiconductor wafer; the grooves are formed in the upper surface of the supporting seat and are connected with the air holes. Compared with the prior art, the present invention improves the cooling effect of processing the wafer because of the air holes and the grooves, because the consistency of temperature distribution on the wafer surface is increased, the process time is reduced, and the throughput is greatly increased.
Description
Technical field
The present invention relates to a kind of grasping system, particularly a kind of wafer holder system that can be applicable to the semiconductor fabrication process is used for supporting a work package and control and treatment temperature.
Background technology
Grasping system is used to support a work package in different occasions.In semiconductor was made, a grasping system can support semiconductor wafer in the tram during wafer (Wafer) is handled running.The manufacturing of semiconductor device has comprised hundreds of the treatment steps that are applied on the semiconductor wafer usually, so that go up formation electronic installation and circuit at semiconductor wafer (Wafer).Different types of grasping system is operated with different processing or process chamber.In the processing procedure of semiconductor wafer, a grasping system is firmly supported the stability that wafer is made with raising in correct position usually.On the make, the also temperature of control wafer of grasping system.Over all, in wafer processing procedure, the stability of a grasping system and temperature control can improve the consistency of specified wafer and the consistency of semiconductor fabrication.
One electrostatic clamp system is not by settling opposite electric charge on wafer and platform generally all by using an electrostatic force to support a wafer on a platform, is exactly by settling electric charge on wafer or platform.With traditional clamping step relatively, it is mainly mechanical clamp, an electrostatic clamp system can avoid doing directly with the electronic building brick and the limit of installing the semiconductor wafer thereon that will be formed and contact.In the semiconductor processes of inferior micron and super inferior micron, the device appearance size on a wafer is very little, and therefore the control of the processing parameter in each treatment step just becomes extremely important.
With the plasma processing chamber is example, and as chamber pressure, the parameter of room temperature and chip temperature is epochmaking.Normally, plasma treatment step comprises to use on electromagnetic energy to a wafer to be made to handle high-energy, for example etched wafer surface or deposit a new material on wafer.In a typical plasma etching process, plasma reaction can be increased in the temperature on the wafer especially, and therefore cooling system just is required to go keeping the surface temperature of wafer within the scope of appointment.
Fig. 1-1 and Fig. 1-2 explanation in plasma processing chamber 10, the conventional wafer Cooling Design of a kind of electrostatic clamp system 12.The end view of the grasping system 12 of a wafer 14 is supported in Fig. 1-1 explanation.Fig. 1-2 illustrates that one has the vertical view of several pores 16 at the grasping system 12 of upper surface, and this grasping system 12 is supported as the wafer as shown in Fig. 1-1.In the processing of wafers operation, pore 16 can be jet to promote heat conduction at wafer 14 and 12 of grasping systems.Fig. 1-2 has also illustrated in electrostatic clamp system 12, four uses of releasing bolt or proposing bolt 18.Figure 14 illustrates the sectional drawing of wafer 14 and the seating surface 12a of electrostatic clamp system 12.As be illustrated among Fig. 1-3, the contact area at cooling pore 16 and wafer 14 backs is the hole areas that are restricted to pore 16.
Confined thus cooling contact area can cause the many problems in plasma processing operation.In case the plasma that plasma processing chamber 10 is opened with the wafer surface that allows to make with a kind of etching or deposition bombs, wafer 14 surface temperature can seriously raise.Yet the near zone that the cooling contact of the restriction that is provided by pore 16 only is provided at pore 16 dispels the heat effectively.Heat in wafer surface increases, and particularly is being positioned at from the far zone of pore, has increased chip temperature and therefore may change treatment characteristic.This local heat increase also can cause the inconsistency of entire wafer Temperature Distribution.This irregular Temperature Distribution may cause wafer distortion.In addition, this irregular Temperature Distribution also can change the efficient of bombing at the plasma of wafer surface zones of different, and can cause other and influence production and conforming making defective.In order to avoid these problems, the power density of operate plasma just must be lowered, and these adjust processing time that can increase each wafer usually and the production efficiency that reduces plasma processing chamber 10.
Summary of the invention
The object of the present invention is to provide a kind of wafer holder system, this wafer holder system can supporting workpiece and can control workpiece ground temperature effectively.
Wafer holder provided by the invention system, include the bearing that a upper surface is used for supporting semiconductor wafer, pore (pore that provides raceway groove to pass to gas) of bearing is provided for several, and several grooves (groove that connects pore) are in the upper surface of this bearing.
Go up in one aspect of the invention, this wafer holder system also comprises a kind ofly provides gas supply device to pore and the groove gas.
On another aspect of the present invention, this pore comprises that first group of pore is arranged on this bearing with the pattern of first radius with circle, and second group of pore is arranged on this bearing with the pattern of second radius with circle; Second radius is greater than first radius.
Yet on another aspect of the present invention, this wafer holder system also comprises the centre porosity of position at the bearing center, and is included in the groove that is connected between first group of pore of this centre porosity and this, and this groove is the bent groove at this upper surface of support.
Still on another aspect of the present invention, these grooves comprise that one connects first group of circular groove of first group of pore, and comprise that one connects second group of circular groove of second group of pore.
The present invention also provides a kind of electrostatic clamp system, include a upper surface in order to support a bearing of semiconductor wafer, comprise that several pass through the pore of this bearing, this pore provides raceway groove to allow gas arrive this semiconductor wafer, and comprising the upper surface of several grooves at this bearing, these grooves are included in straight-line groove and the bent groove that connects between this pore.
The present invention also provides a kind of wafer holder system, includes a upper surface in order to support a bearing of semiconductor wafer, comprises a lot of pores by this bearing, and this pore provides raceway groove to allow gas arrive this semiconductor wafer.This pore comprises a central pore in the center of this bearing, comprises that one first group of pore is arranged on this bearing with the pattern of first radius with circle, and comprises that one second group of pore is arranged on this bearing with the pattern of second radius with circle; Second radius is greater than first radius.This wafer holder system also comprises the upper surface of several grooves at this bearing, and wherein, this groove is included in the center groove that is connected between first group of pore of this centre porosity and this; This groove is the upper surface that bent groove is positioned at this bearing, be included in first circular groove that connects between this first group of pore, be included in second circular groove that connects between this second group of pore, be included in the straight-line groove that is connected between second group of pore of this first group of pore and this, and comprise the bent groove of this second group of pore of connection to this first circular groove.
Effect of the present invention is: compared with prior art, therefore the present invention has promoted the cooling effect of wafer in processing because pore and groove are provided.And the Temperature Distribution consistency on wafer surface increases, and output will significantly increase owing to the processing time reduces.
Description of drawings
Fig. 1-1 is the end view of the conventional electrostatic grasping system of wafer Cooling Design;
Fig. 1-2 is the vertical view of conventional electrostatic grasping system;
Fig. 1-3 is the profile of conventional electrostatic grasping system;
Fig. 2-1 is consistent profile in order to the grasping system of supporting semiconductor wafer with the present invention;
Fig. 2-2 is the vertical view of the grasping system that several pores and groove arranged consistent with the present invention;
Symbol, label declaration among the figure
10～plasma processing chamber;
12～electrostatic clamp system;
12a～seating surface;
14～wafer;
16～pore;
18～proposition bolt;
30～electrostatic clamp system;
32～wafer;
34～bearing;
36a～centre porosity;
36b, 36c～pore;
38a～curved grooves;
38b～first circular groove;
38c～second circular groove;
38d～straight-line groove;
38e～curved grooves.
Embodiment
The invention provides a kind of grasping system that is applied to the semiconductor fabrication process, can be in order to support a work package and the effective temperature of Control work part.This grasping system provides a plurality of grooves that connect between several pores.Grasping system of the present invention is kept the wafer even temperature and is distributed during the processing of wafers running.Therefore, a kind of processing of wafers step, for example a plasma etching or an electroless copper deposition operation may be carried out with the energy of rising and the efficient of increase, and do not had because the risk that not enough cooling or temperature output that control takes place reduce.
The profile of a kind of consistent with the present invention grasping system 30 in order to support semiconductor wafer 32 of Fig. 2-1 explanation.This grasping system can be the grasping system of an electrostatic clamp system or other pattern, as traditional mechanical grip system.In one embodiment of the invention, grasping system 30 is a kind of electrostatic clamp systems, and this grasping system 30 operates in the plasma process chamber to carry out etching or deposition manufacturing process.This grasping system 30 comprises a bearing 34, and this bearing 34 has one in order to support the upper surface of this semiconductor wafer 32.
Fig. 2-2 is the vertical view of this grasping system 30.With reference to Fig. 2-2, this grasping system 30 comprises that several penetrate the pore of this bearing 34, as, 36a, 36b, and 36c.Pore 36a, 36b, and 36c provides raceway groove arrives this semiconductor wafer 32 by gas the back side with as heat conducting medium.This grasping system 30 also has the upper surface of several grooves at this bearing 34, as, 38a, 38b, 38c, 38d, and 38e, and groove 38a, 38b, 38c, 38d and 38e be at pore 36a, and 36b and is connected among the 36c.This groove 38a, 38b, 38c, 38d and 38e are the type recessed channel that forms in these bearing 34 upper surfaces, and have one from 0.1 the width and the degree of depth to several millimeters scopes.One about 0.5 millimeter width is used in the preferred embodiment.
This grasping system 30 can have a gas supply device 40 providing gas to this pore 36a, among 36b and the 36c and to this groove 38a, and 38b, 38c is among 38d and the 38e.Almost is that the gas that is provided by this gas supply device 40 can be used as one heat conducting minute matter, to control the temperature of this wafer 32 in the application in the plasma processing chamber of vacuum environment using this grasping system 30 in one.In a preferred embodiment, this gas supply device 40 provides blunt gas, as helium, and to this pore 36a, among 36b and the 36c, and to this groove 38a, 38b, 38c is among 38d and the 38e.
At the pore 36a of these bearing 34 upper surfaces, 36b, and 36c, and groove 38a, 38b, 38c, 38d and 38e can be in a different manner or pattern be arranged, with cooling requirement and the treatment characteristic that meets a process chamber.In one embodiment of the invention, first group of pore 36b is arranged on this bearing 34 with the pattern of first radius with circle, and second group of pore 36c is arranged on this bearing 34 with the pattern of second radius with circle.As shown in figure 24, second radius is greater than first radius.Further, this grasping system 30 groove 38a of having a centre porosity 36a and between first group of pore 36b of this centre porosity 36a and this, being connected.These grooves 38a is the curved grooves that is formed in these bearing 34 upper surfaces.
Other groove also can between pore and groove, or be added between groove between pore.As another embodiment, these grooves are included in first circular groove 38b that connects between this first group of pore 36b.These grooves are also included within second the circular groove 38c that connects between this second group of pore 36c.These grooves can be included in the straight-line groove 38d that is connected between second group of pore 36c of this first group of pore 36b and this.With reference to figure 2-2, these grooves also can comprise curved grooves 38e, and this curved grooves 38e is connected between first group of pore 36b and second group of pore 36c, connects second group of pore 36c exactly to first circular groove 38b.This curved grooves 38a and 38e are shaped with level and smooth curve, smooth-going air-flow to be provided in this groove or even to comprise some flow-disturbings and strengthen gas-cooled effect.
The gas diffluence cooling wafer that provides pore and groove allow enhancing whereby, therefore grasping system of the present invention has promoted the cooling effect of the wafer in processing.The consistency of the Temperature Distribution on wafer surface just can be increased, and keeps consistent treatment characteristic whereby, and therefore the output of wafer fabrication also is increased.By effective cooling that grasping system of the present invention is arranged or temperature control, the running power of a process chamber just can be increased, and need not emit the risk of the negative effect that results in inappropriate cooling.Therefore the present invention has reduced the processing time and has increased production efficiency.
Though the present invention with preferred embodiment openly as above; yet it is not to be used for limiting the present invention; any those who familiarize themselves with the technology; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention should be as the criterion with the scope that claims were defined of present patent application.
Claims (11)
1. wafer holder system comprises: a bearing, and it has a upper surface to support semiconductor wafer; Pass several pores of this bearing, it is characterized in that,
Above-mentioned several pores provide raceway groove to pass through by gas; And
Several grooves, position are at the upper surface of this bearing, and above-mentioned several grooves connect above-mentioned several pores.
2. wafer holder as claimed in claim 1 system is characterized in that, it is an a kind of electrostatic clamp system.
3. wafer holder as claimed in claim 1 system is characterized in that, also comprises a gas supply device, provides gas to above-mentioned several pores and groove.
4. wafer holder as claimed in claim 1 system is characterized in that described pore comprises:
First group of pore is arranged on this bearing with the pattern of first radius with circle;
And second group of pore, be arranged on this bearing with the pattern of second radius with circle,
This second radius is greater than this first radius.
5. wafer holder as claimed in claim 4 system is characterized in that, also comprises:
One centre porosity is positioned at the center of this bearing; And
Several grooves are connected between first group of pore of this centre porosity and this, and these several grooves are the curved grooves of position at this upper surface of support.
6. wafer holder as claimed in claim 4 system is characterized in that described groove comprises:
One first group of circular groove links this first group of pore; And
One second group of circular groove links this second group of pore.
7. wafer holder as claimed in claim 4 system is characterized in that described groove comprises several straight-line grooves, links this first group of pore and this second group of pore.
8. wafer holder as claimed in claim 4 system is characterized in that described groove comprises several curved grooves, links this first group of pore and this second group of pore.
9. wafer holder as claimed in claim 4 system is characterized in that described groove comprises several curved grooves, links this second group of pore to this first group of circular groove.
10. wafer holder as claimed in claim 1 system is characterized in that,
Above-mentioned several pores comprise:
One centre porosity is positioned at this bearing center;
One first group of pore is arranged on this bearing with the pattern of first radius with circle; And
One second group of pore is arranged on this bearing with the pattern of second radius with circle, and this second radius is greater than first radius;
Wherein, above-mentioned several grooves are connected with second group of pore with first group of pore respectively, and above-mentioned several pores provide raceway groove to arrive this semiconductor wafer by gas.
11. wafer holder as claimed in claim 10 system is characterized in that described groove comprises:
Center groove is connected between first group of pore of this centre porosity and this, and this center groove is the curved grooves of position at this upper surface of support;
First group of circular groove connects between this first group of pore;
Second group of circular groove connects between this second group of pore;
Straight-line groove is connected between second group of pore of this first group of pore and this; And
Curved grooves connects this second group of pore to this first group of circular groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02118190 CN1225776C (en) | 2002-04-24 | 2002-04-24 | Wafer holding system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02118190 CN1225776C (en) | 2002-04-24 | 2002-04-24 | Wafer holding system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1453843A CN1453843A (en) | 2003-11-05 |
| CN1225776C true CN1225776C (en) | 2005-11-02 |
Family
ID=29257303
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02118190 Expired - Lifetime CN1225776C (en) | 2002-04-24 | 2002-04-24 | Wafer holding system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1225776C (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1796966B (en) * | 2004-12-22 | 2010-09-01 | 中芯国际集成电路制造(上海)有限公司 | Clamp for preparing detection sample in use for electron microscope |
| CN101191761B (en) * | 2006-11-20 | 2010-05-12 | 中芯国际集成电路制造(上海)有限公司 | Unsymmetrical accurate ion polishing system sample jig and its uses |
| CN103472603A (en) * | 2013-09-17 | 2013-12-25 | 京东方科技集团股份有限公司 | Supporting pin and display panel production equipment |
| CN109972208A (en) * | 2019-03-06 | 2019-07-05 | 泉州开云网络科技服务有限公司 | Large size silicon-carbide monocrystalline plate cooling device |
-
2002
- 2002-04-24 CN CN 02118190 patent/CN1225776C/en not_active Expired - Lifetime
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| Publication number | Publication date |
|---|---|
| CN1453843A (en) | 2003-11-05 |
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Granted publication date: 20051102 |