CN1224158A - Energetic proton heavy ion detector - Google Patents
Energetic proton heavy ion detector Download PDFInfo
- Publication number
- CN1224158A CN1224158A CN 97125895 CN97125895A CN1224158A CN 1224158 A CN1224158 A CN 1224158A CN 97125895 CN97125895 CN 97125895 CN 97125895 A CN97125895 A CN 97125895A CN 1224158 A CN1224158 A CN 1224158A
- Authority
- CN
- China
- Prior art keywords
- transistor
- collector
- stage
- base stage
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Amplifiers (AREA)
Abstract
A high-energy proton detector is composed of semiconductor sensor, charge-sensitive preamplifier, pulse shaper, master amplifier, pulse amplitude analyzer, D/A converter, algarithmic amplifier and noise detector. All its units are DC coupled and integrated. Its advantages are high signal/noise ratio, wide measuring range and high reliability.
Description
The present invention relates to a kind of energetic proton heavy ion measurement mechanism, particularly measure the sniffer of high energy proton power spectrum.
Energetic proton heavy ion detector mainly is by parts such as semiconductor transducer, charge-sensitive preamplifier, pulse shaping, main amplifier, logarithmic amplifier, pulse height analyzer, D/A converter and Characteristics Detection.The problem that prior art exists mainly is that measuring accuracy and energy range index are all lower, and certain level breaks down in detection, when causing no-output or noise to increase, also can't judge cause.Its reason mainly is: the generation noise signal was too big after the signal passages through which vital energy circulates of charge-sensitive preamplifier was washed into shape, main amplifier, even had buried in oblivion high energy proton, heavy ion signal, so can't measure the low energy signal.On the other hand, noise signal is a random signal, the frequency band broad.Therefore, must design one overlap the device of observation circuit duty, to guarantee the reliability of measured value.
The objective of the invention is a kind of energetic proton heavy ion detector that has broad energy measurement scope, can detect the each several part duty.
At the problem that exists in the prior art, the structure that the present invention adopts is: semiconductor charged particle binocular of being made up of the ternary semiconductor detector and relevant electronics circuit, sensor and electronics circuit are contained in the same cabinet.Each detector output terminal links to each other with the input end of corresponding different charge-sensitive preamplifier respectively, the output terminal of each prime amplifier links to each other with corresponding pulse shaping part input end respectively, the output terminal of each pulse former links to each other with corresponding main amplifier part input end and logarithmic amplifier input end, the output terminal and the logarithmic amplifier output terminal of each main amplifier part link to each other with the pulse height analyzer input end, the output terminal of pulse height analyzer part links to each other with the input end of D/A (D/A) converter part, has connected respectively in each main amplifier part and has been used to detect the instrument characteristic test section of respectively surveying the branch road working condition.The instrument characteristic test section comprises an amplifier that is used to amplify noise signal, the output of amplifier connects a rectification circuit, the base stage that grade follower is penetrated in the output of rectification circuit and one links to each other, the emitting stage output noise signal level of emitter follower, pulse shaping part and main amplifier circuit has partly adopted integrated circuit, has adopted DC coupling between at different levels more.
Pulse shaping partly is an integrated circuit, its circuit constitutes: transistor T 2 base stages are input end, its collector connects power positive end, emitting stage connects the negative pole of voltage stabilizing diode D3, the positive pole of stabilivolt D3 connects the base stage of transistor T 3 and an end of resistance R 9, the emitting stage ground connection of the other end of resistance R 9 and transistor T 3, the collector of transistor T 3 connects the base stage of transistor T 8 and the negative pole of diode D4, diode D4 and D5 series connection, the positive pole of D5 links to each other with the emitting stage of transistor T 4 and the base stage of T7, transistor T 4, the base stage of T5 links to each other with the emitting stage of transistor T 6, transistor T 4, the T5 emitting stage connects power positive end, the collector of transistor T 5 links to each other with the base stage of transistor T 6 and an end of resistance R 11, the grounded collector of the other end of resistance R 11 and transistor T 6, the collector of transistor T 7 connects power positive end, its emitting stage connects an end of resistance R 12, the other end of resistance R 12 is connected with an end of resistance R 13 and as an output terminal, the emitting stage of another termination transistor T 8 of resistance R 13, the grounded collector of transistor T 8.
Main amplifier partly is an integrated circuit, its circuit structure is: the base stage of transistor T 9 is an input end, its collector and transistor T 11, the emitting stage of T12 and the collector of T14 connect power positive end, the emitting stage of transistor T 9 connects an end of the base stage and the resistance R 15 of transistor T 10, the positive pole of another terminating diode D6 of resistance R 15, the D6 minus earth, the emitting stage ground connection of transistor T 10, its collector meets the base stage and the series diode D8 of transistor T 15, the negative pole of D7, the positive pole of D8 connects the base stage of the collector and the transistor T 14 of transistor T 11, the base stage of transistor T 11 and the base stage of T12, the emitting stage of T13 links to each other, the collector of transistor T 12 is connected with the base stage of transistor T 13 and an end of resistance R 17, the other end ground connection of the collector of T13 and resistance R 17, the end of the emitting stage connecting resistance R18 of transistor T 14, the end of the other end connecting resistance R19 of resistance R 18 and as output terminal, the emitting stage of another termination transistor T 15 of resistance R 19, the grounded collector of transistor T 15.
The logarithm amplifying circuit consists of: pulse shaping output is connected to R22 one end through the parallel circuit of E4 and C9 composition, another termination R21 of R22, E6 and C11, another termination R20 of R21, C10 and E5, the other end of R20 and E3, C8, R23, R26, R29, R32 is connected to power positive end simultaneously, the other end of C10 and E5 is received the other end of R26, the base stage of R27 and T17, the other end of C11 and E6 is received the other end of R23 and base stage and R24 one end of T16, the other end of R24 and R25, E7, R27, R28, E8, R30, E9 is ground connection simultaneously, the emitting stage of T16 connects the other end of R25 and E7, the collector of T16 is received the collector of T17 and the emitting stage of T18 respectively, the emitting stage of T17 connects the other end of R28 and E8 respectively, the T18 base stage meets R29, R30, the other end of E9, the T18 collector meets the other end and the C12 of R32, another termination R33 of C12, another output of pulse shaping is connected to R36 one end through the parallel circuit of E11 and C14 composition, another termination R35 of R36, E13 and C16, another termination R34 of R35, C15 and E12, the other end of R34 and E10, C13, R37, R40, R43, R46 is connected to power positive end simultaneously, the other end of C15 and E12 is received the other end of R40, and the base stage of R41 and T20, the other end of C16 and E13 is received the other end of R37 and base stage and R38 one end of T19, the other end of R38 and R39, E14, R41, R42, E15, R44, E16 is ground connection simultaneously, the emitting stage of T19 connects the other end of R39 and E14, the collector of T19 is received the collector of T20 and the emitting stage of T21 respectively, the emitting stage of T20 connects the other end of R42 and E15 respectively, the T21 base stage meets R43, R44, the other end of E16, the T21 collector meets the other end and the C17 of R46, another termination R47 of C17, the other end of R47 is connected with the other end of R33 also receives 13 pin of LT158 and the end of R48 and C18 simultaneously, meet C19 between the 11-12 of LT158,11 pin meet R49 simultaneously, the other end ground connection of R49,10 pin of LT158 meet R48, the other end of C18, and meet C20 simultaneously, another termination R50 of C20,2 pin and R51 and the C21 of another termination LT158 of R50,4 pin of another termination LT158 of R51 and C21 and output simultaneously.
After adopting the present invention, when energetic proton heavy ion detector being used for the measurement of space proton power spectrum and heavy ion, can recognizing the working condition of respectively surveying branch road in time, and improve signal to noise ratio (S/N ratio), enlarge the scope of measuring.
Fig. 1 is the theory diagram of energetic proton heavy ion detector of the present invention.
Fig. 2 is the circuit diagram of characteristic tester in the block diagram shown in Figure 1.
Fig. 3 is pulse shaping part and a main amplifier circuit diagram partly in the semiconductor transducer among Fig. 1.
Fig. 4 is the circuit diagram of logarithmic amplifier part among Fig. 1.
Fig. 5 is the structural representation of semiconductor transducer part among Fig. 1.
Do an introduction in detail below in conjunction with 1,2,3,4,5 pairs of architectural features of the present invention of accompanying drawing and embodiment:
Fig. 1 is the theory diagram of energetic proton heavy ion detector embodiment of the present invention, is the sensor 1 that is made of semiconductor detector and constitutes with charge-sensitive preamplifier part 2, pulse shaping part 3, main amplifier 4, logarithmic amplifier 5, pulse height analyzer 6, D/A conversion 7 and the walkaway part 8 of detector respective branch respectively.Semiconductor transducer part 1 is to be made of as shown in Figure 4 detector D1, D2 and D3, be ternary semiconductor charged particle binocular, in energetic proton heavy ion incident sensor 1, in detector D1, D2 and D3, produce different energy losses, the charge signal of its output reflection proton, heavy ion energy relationship; Charge preamplifier amplifies the signal of the reflection energy of a charge of semiconductor transducer 1 output and becomes voltage pulse signal, after amplifying, this pulse shaping part 3 shapings transport to main amplifier 4 or logarithmic amplifier 5 amplifies, signal after the amplification is transported to amplitude analyzer 6,6 pairs of amplifying signals of pulse height analyzer carry out the amplitude analysis, and different amplitudes is being represented the proton or the heavy ion of different-energy.The output pulse of pulse height analyzer 6 is converted to voltage signal through D/A change-over circuit 7, as long as write down the size of output voltage values, just can converse the counting rate of tested energetic proton heavy ion.Because the present invention is mainly used in space exploration, if can't judge when therefore detection instrument of the present invention breaks down in the space, directly have influence on the reliability of result of detection, therefore the output terminal at amplifier 4 has increased instrument characteristic test section 8, is used to judge the duty of respectively surveying branch road.
Fig. 2 is the circuit diagram of embodiment of the invention instrument characteristic test section.It comprises an amplifier A who is used to amplify noise, here amplifier A has adopted LT158, input signal is connected to the input end 13 of amplifier A through capacitor C 1 and resistance R 1 series arm, its output terminal 9-10 connects a rectification circuit through capacitor C4, between its input end and the output terminal 9-10 and connect a resistance R 3 and capacitor C 2, R3 is used to adjust the enlargement factor of amplifier, C2 is the speed-up capacitor of signal, prevent the signal leading edge recoil, its link 11 and 12 is connected with a capacitor C3, with the noise of step-down amplifier itself.The end of link 11 connecting resistance R2, the other end ground connection of resistance R 2, the effect of resistance R 2 is to increase the circuit working electric current, makes the load capacity of circuit stronger.The rectification circuit that another termination D1, the D2 of capacitor C4 forms, it links to each other with the negative pole of commutation diode D1 and the positive pole of D2, the end of the negative pole connecting resistance R5 of diode D2, the positive pole of electrochemical capacitor E2 and the base stage of transistor T 1, the other end ground connection of diode D1, resistance R 5, electrochemical capacitor E2.Transistor T 1 constitutes the emitter follower circuit, its emitting stage connecting resistance R6 one end, and resistance R 6 another termination R7 one ends and as output terminal, the other end ground connection of resistance R 7, power positive end connects the collector of transistor T 1 through resistance R 4.Its collector also meets filter capacitor E1 and C5.
Fig. 3 is pulse shaping part and a main amplifier circuit diagram partly in the embodiment of the invention shown in Figure 1.Its circuit bank becomes: the base stage of transistor T 2 is an input end, and it joins through resistance R 8, capacitor C 6 couplings with the output signal from the prime amplifier part, and resistance R 10 scalable form the enlargement factor of circuit.Collector connects power positive end, emitting stage connects the negative pole of voltage stabilizing diode D3, the positive pole of stabilivolt D3 connects the base stage of transistor T 3 and an end of resistance R 9, the emitting stage ground connection of the other end of resistance R 9 and transistor T 3, the collector of transistor T 3 connects the base stage of transistor T 8 and the negative pole of diode D4, diode D4 and D5 series connection, the positive pole of D5 links to each other with the collector of transistor T 4 and the base stage of T7.The base stage of transistor T 4, T5 links to each other with the emitting stage of transistor T 6, the emitting stage of transistor T 4, T5 connects power positive end, the collector of transistor T 5 links to each other with the base stage of transistor T 6 and an end of resistance R 11, the grounded collector of the other end of resistance R 11 and transistor T 6, the collector of transistor T 7 connects power positive end, its emitting stage connects an end of resistance R 12, the other end of resistance R 12 is connected with an end of resistance R 13 and as an output terminal, the emitting stage of another termination transistor T 8 of resistance R 13, the grounded collector of transistor T 8.The base stage of main amplifier part transistor T 9 is an input end, its output terminal with the pulse shaping part links to each other with capacitor C 7 through resistance R 14, and link to each other with power positive end through resistance R 16, the collector of transistor T 9 and transistor T 11, the emitting stage of T12 and the collector of T14 connect power positive end, the emitting stage of transistor T 9 connects an end of the base stage and the resistance R 15 of transistor T 10, the positive pole of another terminating diode D6 of resistance R 15, the minus earth of D6, the emitting stage ground connection of transistor T 10, its collector meets the base stage and the series diode D8 of transistor T 15, the negative pole of D7, the positive pole of D8 connects the base stage of the collector and the transistor T 14 of transistor T 11, the base stage of transistor T 11 and the base stage of T12, the emitting stage of T13 links to each other, the collector of transistor T 12 links to each other with the base stage of transistor T 13 and an end of resistance R 17, the other end ground connection of the collector of T13 and resistance R 17, the end of the emitting stage connecting resistance R18 of transistor T 14, the end of the other end connecting resistance R19 of resistance R 18 and as output terminal, the emitting stage of another termination transistor T 15 of resistance 19, the grounded collector of transistor T 15.
Fig. 4 is the circuit diagram of logarithmic amplifier part in the embodiment of the invention shown in Figure 1.The device circuit bank becomes: pulse shaping output is connected to R22 one end through the parallel circuit of E4 and C9 composition, another termination R21 of R22, E6 and C11, another termination R20 of R21, C10 and E5, the other end of R20 and E3, C8, R23, R26, R29, R32 is connected to power positive end simultaneously, the other end of C10 and E5 is received the other end of R26, the base stage of R27 and T17, the other end of C11 and E6 is received the other end of R23 and base stage and R24 one end of T16, the other end of R24 and R25, E7, R27, R28, E8, R30, E9 is ground connection simultaneously, the emitting stage of T16 connects the other end of R25 and E7, the collector of T16 is received the collector of T17 and the emitting stage of T18 respectively, the emitting stage of T17 connects the other end of R28 and E8 respectively, the T18 base stage meets R29, R30, the other end of E9, the T18 collector meets the other end and the C12 of R32, another termination R33 of C12, another output of pulse shaping is connected to R36 one end through the parallel circuit of E11 and C14 composition, another termination R35 of R36, E13 and C16, another termination R34 of R35, C15 and E12, the other end of R34 and E10, C13, R37, R40, R43, R46 is connected to power positive end simultaneously, the other end of C15 and E12 is received the other end of R40, and the base stage of R41 and T20, the other end of C16 and E13 is received the other end of R37 and base stage and R38 one end of T19, the other end of R38 and R39, E14, R41, R42, E15, R44, E16 is ground connection simultaneously, the emitting stage of T19 connects the other end of R39 and E14, the collector of T19 is received the collector of T20 and the emitting stage of T21 respectively, the emitting stage of T20 connects the other end of R42 and E15 respectively, the T21 base stage meets R43, R44, the other end of E16, the T21 collector meets the other end and the C17 of R46, another termination R47 of C17, the other end of R47 is connected with the other end of R33 also receives 13 pin of LT158 and the end of R48 and C18 simultaneously, meet C19 between the 11-12 of LT158,11 pin meet R49 simultaneously, the other end ground connection of R49,10 pin of LT158 meet R48, the other end of C18, and meet C20 simultaneously, another termination R50 of C20,2 pin and R51 and the C21 of another termination LT158 of R50,4 pin of another termination LT158 of R51 and C21 and output simultaneously.
The structural representation of semiconductor transducer part 1 as shown in Figure 5, be to constitute by semiconductor detector D1, D2, D3, it is the Au Si surface barrier detector of 300 μ m that D1 adopts thickness, D2 and D3 adopt thickness to be the lithium-drifted silicon detector of 3500 μ m, and the place ahead is established the aluminium matter light blocking layer of 15 μ m and injected to prevent visible light.
Claims (6)
1. energetic proton heavy ion detector, it comprises Charged Particle Telescope part that the ternary semiconductor detector constitutes and charge-sensitive preamplifier part, pulse shaping part, main amplifier part, logarithmic amplifier part, pulse height analyzer part and the D/A converter part of joining with three tunnel detectors and order respectively, it is characterized in that the output terminal of each main amplifier part is connected with an instrument characteristic test section respectively.
2. energetic proton heavy ion detector according to claim 1, it is characterized in that Characteristics Detection partly comprises an amplifier that is used to amplify noise signal, the output of amplifier connects a rectification circuit, the base stage that grade follower is penetrated in the output of rectification circuit and one links to each other, and penetrates the emitting stage output noise signal level of grade follower.
3. energetic proton heavy ion detector according to claim 1 and 2, it is characterized in that pulse shaping partly is an integrated circuit, its circuit constitutes: transistor T 2 base stages are input end, its collector connects power positive end, emitting stage connects the negative pole of voltage stabilizing diode D3, the positive pole of stabilivolt D3 connects the base stage of transistor T 3 and an end of resistance R 9, the emitting stage ground connection of the other end of resistance R 9 and transistor T 3, the collector of transistor T 3 connects the base stage of transistor T 8 and the negative pole of diode D4, diode D4 and D5 series connection, the positive pole of D5 links to each other with the emitting stage of transistor T 4 and the base stage of T7, transistor T 4, the base stage of T5 links to each other with the emitting stage of transistor T 6, transistor T 4, the T5 emitting stage connects power positive end, the collector of transistor T 5 links to each other with the base stage of transistor T 6 and an end of resistance R 11, the grounded collector of the other end of resistance R 11 and transistor T 6, the collector of transistor T 7 connects power positive end, its emitting stage connects an end of resistance R 12, the other end of resistance R 12 is connected with an end of resistance R 13 and as an output terminal, the emitting stage of another termination transistor T 8 of resistance R 13, the grounded collector of transistor T 8.
4. energetic proton heavy ion detector according to claim 3, it is characterized in that main amplifier partly is an integrated circuit, its circuit structure is: the base stage of transistor T 9 is an input end, its collector and transistor T 11, the emitting stage of T12 and the collector of T14 connect power positive end, the emitting stage of transistor T 9 connects an end of the base stage and the resistance R 15 of transistor T 10, the positive pole of another terminating diode D6 of resistance R 15, the D6 minus earth, the emitting stage ground connection of transistor T 10, its collector meets the base stage and the series diode D8 of transistor T 15, the negative pole of D7, the positive pole of D8 connects the base stage of the collector and the transistor T 14 of transistor T 11, the base stage of transistor T 11 and the base stage of T12, the emitting stage of T13 links to each other, the collector of transistor T 12 is connected with the base stage of transistor T 13 and an end of resistance R 17, the other end ground connection of the collector of T13 and resistance R 17, the end of the emitting stage connecting resistance R18 of transistor T 14, the end of the other end connecting resistance R19 of resistance R 18 and as output terminal, the emitting stage of another termination transistor T 15 of resistance R 19, the grounded collector of transistor T 15.
5. energetic proton heavy ion detector according to claim 1 and 2, it is characterized in that the logarithm amplifying circuit, its circuit bank becomes: pulse shaping output is connected to R22 one end through the parallel circuit of E4 and C9 composition, another termination R21 of R22, E6 and C11, another termination R20 of R21, C10 and E5, the other end of R20 and E3, C8, R23, R26, R29, R32 is connected to power positive end simultaneously, the other end of C10 and E5 is received the other end of R26, the base stage of R27 and T17, the other end of C11 and E6 is received the other end of R23 and base stage and R24 one end of T16, the other end of R24 and R25, E7, R27, R28, E8, R30, E9 is ground connection simultaneously, the emitting stage of T16 connects the other end of R25 and E7, the collector of T16 is received the collector of T17 and the emitting stage of T18 respectively, the emitting stage of T17 connects the other end of R28 and E8 respectively, the T18 base stage meets R29, R30, the other end of E9, the T18 collector meets the other end and the C12 of R32, another termination R33 of C12, another output of pulse shaping is connected to R36 one end through the parallel circuit of E11 and C14 composition, another termination R35 of R36, E13 and C16, another termination R34 of R35, C15 and E12, the other end of R34 and E10, C13, R37, R40, R43, R46 is connected to power positive end simultaneously, the other end of C15 and E12 is received the other end of R40, and the base stage of R41 and T20, the other end of C16 and E13 is received the other end of R37 and base stage and R38 one end of T19, the other end of R38 and R39, E14, R41, R42, E15, R44, E16 is ground connection simultaneously, the emitting stage of T19 connects the other end of R39 and E14, the collector of T19 is received the collector of T20 and the emitting stage of T21 respectively, the emitting stage of T20 connects the other end of R42 and E15 respectively, the T21 base stage meets R43, R44, the other end of E16, the T21 collector meets the other end and the C17 of R46, another termination R47 of C17, the other end of R47 is connected with the other end of R33 also receives 13 pin of LT158 and the end of R48 and C18 simultaneously, meet C19 between the 11-12 of LT158,11 pin meet R49 simultaneously, the other end ground connection of R49,10 pin of LT158 meet R48, the other end of C18, and meet C20 simultaneously, another termination R50 of C20,2 pin and R51 and the C21 of another termination LT158 of R50,4 pin of another termination LT158 of R51 and C21 and output simultaneously.
6. energetic proton heavy ion detector according to claim 4 is characterized in that the logarithm amplifying circuit.Its circuit bank becomes: pulse shaping output is connected to R22 one end through the parallel circuit of E4 and C9 composition, another termination R21 of R22, E6 and C11, another termination R20 of R21, C10 and E5, the other end of R20 and E3, C8, R23, R26, R29, R32 is connected to power positive end simultaneously, the other end of C10 and E5 is received the other end of R26, the base stage of R27 and T17, the other end of C11 and E6 is received the other end of R23 and base stage and R24 one end of T16, the other end of R24 and R25, E7, R27, R28, E8, R30, E9 is ground connection simultaneously, the emitting stage of T16 connects the other end of R25 and E7, the collector of T16 is received the collector of T17 and the emitting stage of T18 respectively, the emitting stage of T17 connects the other end of R28 and E8 respectively, the T18 base stage meets R29, R30, the other end of E9, the T18 collector meets the other end and the C12 of R32, another termination R33 of C12, another output of pulse shaping is connected to R36 one end through the parallel circuit of E11 and C14 composition, another termination R35 of R36, E13 and C16, another termination R34 of R35, C15 and E12, the other end of R34 and E10, C13, R37, R40, R43, R46 is connected to power positive end simultaneously, the other end of C15 and E12 is received the other end of R40, and the base stage of R41 and T20, the other end of C16 and E13 is received the other end of R37 and base stage and R38 one end of T19, the other end of R38 and R39, E14, R41, R42, E15, R44, E16 is ground connection simultaneously, the emitting stage of T19 connects the other end of R39 and E14, the collector of T19 is received the collector of T20 and the emitting stage of T21 respectively, the emitting stage of T20 connects the other end of R42 and E15 respectively, the T21 base stage meets R43, R44, the other end of E16, the T21 collector meets the other end and the C17 of R46, another termination R47 of C17, the other end of R47 is connected with the other end of R33 also receives 13 pin of LT158 and the end of R48 and C18 simultaneously, meet C19 between the 11-12 of LT158,11 pin meet R49 simultaneously, the other end ground connection of R49,10 pin of LT158 meet R48, the other end of C18, and meet C20 simultaneously, another termination R50 of C20,2 pin and R51 and the C21 of another termination LT158 of R50,4 pin of another termination LT158 of R51 and C21 and output simultaneously.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 97125895 CN1099589C (en) | 1997-12-24 | 1997-12-24 | Energetic proton heavy ion detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 97125895 CN1099589C (en) | 1997-12-24 | 1997-12-24 | Energetic proton heavy ion detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1224158A true CN1224158A (en) | 1999-07-28 |
| CN1099589C CN1099589C (en) | 2003-01-22 |
Family
ID=5177477
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 97125895 Expired - Fee Related CN1099589C (en) | 1997-12-24 | 1997-12-24 | Energetic proton heavy ion detector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1099589C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102183779A (en) * | 2010-12-29 | 2011-09-14 | 中国科学院空间科学与应用研究中心 | Multidirectional high energy particle detector |
| CN105738941A (en) * | 2014-12-12 | 2016-07-06 | 中国科学院空间科学与应用研究中心 | Space energy particle energy spectrum measurement device based on electrostatic deflection |
-
1997
- 1997-12-24 CN CN 97125895 patent/CN1099589C/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102183779A (en) * | 2010-12-29 | 2011-09-14 | 中国科学院空间科学与应用研究中心 | Multidirectional high energy particle detector |
| CN102183779B (en) * | 2010-12-29 | 2012-11-21 | 中国科学院空间科学与应用研究中心 | Multidirectional high energy particle detector |
| CN105738941A (en) * | 2014-12-12 | 2016-07-06 | 中国科学院空间科学与应用研究中心 | Space energy particle energy spectrum measurement device based on electrostatic deflection |
| CN105738941B (en) * | 2014-12-12 | 2019-05-17 | 中国科学院国家空间科学中心 | A kind of spectral measurement device of the dimensional energy particle based on electrostatic deflection |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1099589C (en) | 2003-01-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106019300A (en) | Laser ranging device and laser ranging method thereof | |
| CN108362377B (en) | Low-frequency low-noise balanced homodyne detector | |
| CN205992055U (en) | A kind of laser ranging system | |
| CN102208942B (en) | Method of optical cable range finding with optical cable tracker, and optical cable tracker | |
| CN206411263U (en) | A kind of pulse laser receiving circuit based on TOF principle laser radars | |
| CN1099589C (en) | Energetic proton heavy ion detector | |
| CN203933547U (en) | A kind of micro-amplification circuit of electrical signal for handheld device | |
| CN106950407A (en) | A kind of three-phase isolation detection circuit | |
| CN104020460A (en) | Echo signal amplification circuit of laser ranging system | |
| CN112285497B (en) | Partial discharge detection device of gas insulation equipment and gas insulation equipment | |
| CN102621369B (en) | Inductance ESR (equivalent series resistance) based electric current detection circuit with potential floating function | |
| CN1046593C (en) | High-energy electronic detector | |
| CN201681164U (en) | Detector for metal pipeline in front of pipe roof | |
| CN106441497A (en) | Signal buffering and amplifying type water level early warning system based on Internet-of-Things technology | |
| CN202663362U (en) | Preamplifier for rapid spot size measurement | |
| CN115166809A (en) | Integrated reading device matched with silicon detector | |
| CN107817097A (en) | Laser optical detection circuit | |
| CN207556802U (en) | Laser optical detection circuit | |
| CN113670345A (en) | Low-noise photoelectric detection device for decomposing photocurrent signal | |
| CN209070608U (en) | A kind of entrance guard device based on ultrasonic sensor | |
| CN108072889B (en) | Working method of ultralow background liquid scintillation spectrometer | |
| CN212588308U (en) | Preamplifier with flat amplitude-frequency characteristic | |
| CN207458323U (en) | A kind of host MBUS receiving circuits applied to multinode | |
| CN101718538A (en) | Signal receiving and amplifying device of electromagnetic ultrasonic thickness measuring instrument | |
| CN2546875Y (en) | Ultrasound probe with amplify outputting for receiving & transmitting isomorphous sheet |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20030122 Termination date: 20141224 |
|
| EXPY | Termination of patent right or utility model |