CN1221979A - Method for forming conductive layer using atomic layer deposition process - Google Patents

Method for forming conductive layer using atomic layer deposition process Download PDF

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CN1221979A
CN1221979A CN98108477A CN98108477A CN1221979A CN 1221979 A CN1221979 A CN 1221979A CN 98108477 A CN98108477 A CN 98108477A CN 98108477 A CN98108477 A CN 98108477A CN 1221979 A CN1221979 A CN 1221979A
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gas
layer
metal
atomic layer
metal atomic
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CN1128465C (en
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姜尚范
蔡允淑
朴昌洙
李相忍
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Samsung Electronics Co Ltd
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    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/45561—Gas plumbing upstream of the reaction chamber
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    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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Abstract

A method for forming conductive layer using atomic layer deposition process reacts a precursor containing metal with a reducing gas, forming a metal atom on a semiconductor substrate and a position deposited metal atoms dissolved by metal halide gas by reacting a sacrificial metal atoms layer with metal halide gas. Moreover, a silicon layer may be additionally formed on the metal layer using a silicon source gas, to thereby alternately stack metal layers and silicon layers.

Description

Utilize atomic layer deposition technology to form the method for conductive layer
The present invention relates to a kind of method that is used to form the conductive layer on the semiconductor device, particularly relate to the method for utilizing atomic layer deposition technology to form conductive layer.
Along with the increase of semiconductor device degree of integration, design rule has reduced.Therefore the depth-width ratio of contact hole becomes higher, and still, it is more shallow that junction depth becomes.Junction depth directly depends on the short channel effect of MOS transistor.That is to say, be applicable to that the MOS transistor of highly integrated semiconductor device requires that short ditch length is arranged, the shallow source/drain region degree of depth, promptly junction depth must be shallow, has the characteristic of the MOS transistor of short ditch with improvement.Be used for needing one deck barrier metal layer by the metal interconnected interconnection technique that contacts shallow junction.Metal interconnected being penetrated in the shallow junction that this just hinders namely prevents from tying spike phenomenon.Usually adopt titanium nitride (TiN) layer as barrier metal layer, and between this barrier metal layer and knot, insert one deck ohm layer, for example titanium silicide layer.The fusing point that is generally used for the titanium silicide layer of ohm layer or interconnection is 1540 ℃, and resistance is 13-16 μ Ω-cm, and its barrier height is 0.6eV at N type impurity layer.By at knot as the titanium silicide layer of ohm layer, the upper titanium layer that forms of the silicon substrate (doped layer) that namely mixes, then with its annealing so that this silicon layer and this silicon substrate react to each other forms.
As above said, in the metal interconnected method of being used to form of routine, form an intermediate dielectric layer at doped layer, and form certain pattern with the formation contact hole in this intermediate dielectric layer, thereby make this doped layer expose certain zone.And on the whole surface of the resulting structure that forms contact hole, form ohm layer, barrier metal layer and metal interconnected successively.Here, this ohm layer is by forming titanium layer and obtain with this titanium layer annealing or by directly form titanium silicide layer on this doped layer on the doped layer that exposes.This titanium silicide layer must form under enough low temperature, to reduce the damage to doped layer.Therefore, people have proposed the method for employing plasma enhanced chemical vapor deposition (PECVD) technology formation titanium silicide layer, referring to " forming TiSi with the plasma enhanced chemical vapor deposition on the wafer of oxide formation pattern 2Coating " people such as J.Lee., electrochemistry can will (U.S.), vol.139, No.4; 1992, pp.1159-1165 and " material behavior of the titanium silicide of plasma enhanced CVD ", people such as Alan E.Morgan; vacuum science technical journal B4 (3), 1986, pp.723-731.But, when in highly integrated semiconductor device when the contact hole with large ratio of height to width forms titanium silicide layer, this titanium silicide layer is owing to the plasma characteristics show relatively poor step coverage.Simultaneously, people such as people such as V.Ilderem and G.J.Reynolde have also proposed the method that low pressure chemical vapor deposition (LPCVD) technology of a kind of employing under 600 ℃ or higher temperature forms titanium silicide layer, referring to " the optimization deposition parameters of low-pressure chemical vapor phase deposition titanium silicide; electrochemistry meeting will (U.S.); 1988, pp.2590-2596 and " low-pressure chemical vapor phase deposition selectivity titanium disilicide ", applicating physical magazine 65 (8); 1989, pp.3212-3218.But, when under 600 ℃ or higher temperature, forming titanium silicide layer, will increase with silicon loss in the doped layer that this silicon layer contact, thereby make the characteristic of junction leakage become inferior.Therefore, for the semiconductor device of the Highgrade integration that needs shallow junction, be difficult to form titanium silicide layer by the LPCVD method.
The object of the present invention is to provide a kind of atomic layer deposition technology that adopts to be formed on the method that has the conductive layer of improved step coverage under 500 ℃ or the lower temperature.
Therefore, an aspect that achieves the above object according to the present invention, on Semiconductor substrate, form one deck sacrificial metal atomic layer, and thereby this sacrificial metal atomic layer is removed in the reaction of this sacrificial metal atomic layer and metal halide gas, form a kind of metal atomic layer simultaneously, wherein the metallic atom that is decomposed by this metal halide gas is deposited.This Semiconductor substrate is silicon substrate, and it has predetermined surf zone, forms the knot that mixes, i.e. a kind of doped layer in this zone.In addition, can form a kind of interlevel dielectric layer pattern on this Semiconductor substrate, it is with contact hole, thus the zone that this doped layer exposure is scheduled to.
On a kind of initial metal atomic layer, form this sacrificial metal atomic layer and this metal atomic layer successively at least once, said initial metal atomic layer is the metal atomic layer that forms at the beginning on Semiconductor substrate, forms the metal level of being made up of the multiple layer metal atomic layer that is positioned on this Semiconductor substrate thus.In the present invention, as the sacrificial metal atomic layer that forms at the beginning on Semiconductor substrate, this initial sacrificial metal atomic layer must form like this, namely so that the whole surface of the doped layer that exposes is fully capped.If the surface by the doped layer of contact holes exposing can not be covered by this initial sacrificial metal atomic layer fully, then metal halide gas will react with doped layer and make this doped layer impaired.Therefore, before forming initial sacrificial metal atomic layer, can form the initial expendable metal layer on the whole surface that covers doped layer fully.At this moment, preferably when forming initial expendable metal layer, this Semiconductor substrate is heated to 300-500 ℃.This initial expendable metal layer is formed by the material layer identical with this sacrificial metal atomic layer.This initial expendable metal layer or this sacrificial metal atomic layer form by this sacrificial metal source gas and a kind of reducing gas are reacted to each other.In the present invention, preferably adopt hydrogen and silane gas as reducing gases.
Simultaneously, this metal halide gas must have the Gibbs free energy that is lower than the compound of being made up of the halogen atom of the metallic atom of this sacrificial metal atomic layer and metal halide gas.In other words, the metallic atom of this sacrificial metal atomic layer must be combined with halogen atom, rather than the metallic atom of metal halide is combined with halogen atom.For instance, in order to form the metal atomic layer that is formed by titanium on this Semiconductor substrate, preferably this metal halide adopts titanium tetrachloride gases, titanium tetra iodide gas, titanium tetrabromide gas or titanium tetrafluoride gas.At this moment, if this metal halide is titanium tetrachloride gases, then preferably this sacrificial metal atomic layer is aluminium lamination, lanthanum layer, praseodymium layer, indium layer, cerium layer, neodymium layer or beryllium layer.This is because the Gibbs free energy of titanium tetrachloride gases is lower than chlordeneization two aluminium gases, lanthanum trichloride gas, praseodymium trichloride gas, chlordeneization two indium gases, cerous chloride gas, neodymium trichloride gas or tetrachloroization two beryllium gases.Similarly, if thereby adopt titanium tetra iodide gas to form the metal level that is formed by titanium as metal halide in this Semiconductor substrate, then preferably, this sacrificial metal atomic layer is aluminium lamination, zirconium layer or hafnium layer.This is because the Gibbs free energy of the gas of titanium tetra iodide is lower than hexaiodoization two aluminium gases, zirconium tetraiodide gas or tetraiodide hafnium gas.
According to the kind of the metal atomic layer that on this Semiconductor substrate, forms, can adopt various metal halide gas, as TaCl 5Gas, TaI 5Gas, TaBr 5Gas, TaF 5Gas, HfCl 4Gas, HfI 4Gas, HfBr 4Gas, HfF 4Gas, ZrCl 4Gas, Zrl 4Gas, ZrBr 4Gas, ZrF 4Gas.
As above said, if metal halide gas is fed to formation sacrificial metal atomic layer or forms initial expendable metal layer and the surface of the structure of initial sacrificial metal atomic layer, then metallic atom in the sacrificial metal atomic layer and the metallic atom in the initial expendable metal layer will combine with the halogen atom in the metal halide gas, produce a kind of escaping gas thus.The metallic atom in this metal halide as a result, namely transition metal atoms is deposited on the Semiconductor substrate, forms thus metal atomic layer.Preferably when being heated to 300-500 ℃, Semiconductor substrate forms this sacrificial metal atomic layer and metal atomic layer successively.
Another aspect that achieves the above object according to the present invention forms sacrificial metal atomic layer and metal atomic layer in the mode identical with first aspect in Semiconductor substrate, and forms one deck silicon atom layer at this metal atomic layer.In the present invention, can resemble first aspect and form a kind of initial expendable metal layer in Semiconductor substrate, and then form the initial sacrificial metal atomic layer of one deck, this layer forms in Semiconductor substrate at the beginning.Then stack gradually sacrificial metal atomic layer, metal atomic layer and silicon atom layer forming at least on the initial silicon atom layer structure once, thus on this Semiconductor substrate alternately folded multiple layer metal atomic layer in stratum and multilayer silicon atom layer.Can form metal silicide layer with required composition ratio when suitably being controlled when the thickness of the thickness of metal atomic layer and silicon atom layer this moment.In addition, on this Semiconductor substrate, form successively silicon atom layer and metal atomic layer once at least, thereby alternately superpose multilayer silicon atom layer and multiple layer metal atomic layer.Subsequently if desired, can be with the structure annealing of alternately laminated multilayer silicon atom layer and multiple layer metal atomic layer, thus form the metal silicide layer that can improve contact resistance.Preferably, this annealing can be undertaken by Fast Heating technology (RTP), kiln annealing process or vacuum annealing process.When forming silicon atom layer, this Semiconductor substrate is heated to 300-500 ℃.Can adopt silicon source gas, the parent substance that namely contains silicon atom forms silicon atom layer, and preferably this silicon source gas adopts SiH 4Gas, Si 2H 6Gas, (CH 3) 3SiC ≡ CSi (CH) 3Gas, ((CH 3) 3Si) 2CH 2Gas, (CH 3) 3CSi (CH 3) 2Cl gas, (C 4H 9) SiCl 3Gas, (CH 3) 3SiN (C 2H 5) 2Gas, (CH 3) 2SiCl 2Gas, ((CH 3) 2Si-) nGas, (C 6H 5) 2SiCl 2Gas, (C 6H 5) 2SiH 2Gas, C 2H 5SiCl 3Gas, Cl 3SiSiCl 3Gas, (CH 3) 3SiSi (CH 3) 3Gas, CH 3SiCl 2H gas, (CH 3) (C 6H 5) SiCl 2Gas, C 6H 5SiCl 3Gas, SiBr 4Gas, SiCl 4Gas, SiF 4Gas, SiI 4Gas, (C 32H 16N 8) SiCl 2Gas, Si (Si (CH 3) 3) 4Gas, Si (CH 3) 4Gas, CH 3SiCl 3Gas, HSiCl 3Gas, (C 2H 5) 3SiCl gas, CF 3Si (CH 3) 3Gas, (CH 3) 3SiCl gas, (CH 3) 3SiH gas, (CH 3) 3SiC ≡ CH gas, (C 5H 5) Si (CH 3) 3Gas, (C 5(CH 3) 5) Si (CH 3) 3Gas, (CH 3) 3SiH gas, (CH 3) 3SiC ≡ CH gas, (C 5H 5Si (CH 3) 3Gas, (C 5(CH 3) 5) gas, (C 6H 5) 3SiCl gas, (C 6H 5) 3SiH gas, ((CH 3) 2N) 3CH gas or CH 2=CHSiCl 3Gas.
According to the present invention, can be on the semiconductor substrate surface of contact hole, under 500 ℃ or lower temperature, form metal level or metal silicide layer with good step coverage with large ratio of height to width.Therefore, need to form conductive layer in the semiconductor device process of Highgrade integration of shallow junction, promptly have the barrier metal layer or the ohm layer of excellent stability with excellent stability in manufacturing.
Above-mentioned purpose of the present invention and advantage become apparent its detailed description of the preferred embodiments by the reference accompanying drawing.
Fig. 1 is the process sequence flow chart of expression a kind of embodiment of the present invention;
Fig. 2 is the time diagram of expression a kind of embodiment of the present invention;
Fig. 3 is the process sequence flow chart of expression another embodiment of the present invention;
Fig. 4 is the time diagram of expression another embodiment of the present invention;
Fig. 5 is the schematic representation of apparatus that expression is used for being formed for the conductive layer in embodiment of the present invention;
Fig. 6 is scanning electron microscopy (SEM) figure according to the titanium layer cross section of a kind of embodiment of the present invention;
The composition of titanium layer among Fig. 6 that Fig. 7 represents to measure by x-ray fluorescence analysis.
Referring to Fig. 5, being used for forming device according to conductive layer of the present invention comprises reative cell 51, is installed in reative cell 51 bottoms and is used for the superincumbent susceptor 53 in Semiconductor substrate 55 location, be installed in the shower nozzle 57 that susceptor 53 tops are used in reative cell 51 spraying reacting gas, and link to each other with reative cell 51 and to be used for controlling the vacuum rods 59 of the pressure in the reative cell 51.In the present invention, shower nozzle 57 comprises two gas feed A and the B that is separated from each other.In reative cell 51, spray into metal source gas and inert gas by gas feed A, in reative cell 51, spray into silicon source gas, sacrificial metal source gas and reducing gas by gas feed B.So just can be before arriving reative cell 51 reaction of gas be limited in a the inside among import A and the B.Control metal source gas and the injection of inert gas in gas feed A by the first valve V1 and the second valve V2 respectively, and by the 3rd valve V3, the 4th valve V4 and the 5th valve V5 silicon source gas, sacrificial metal source gas and the injection of reducing gas in gas feed B are controlled respectively.
In reference Fig. 1,2 and 5 said a kind of embodiments of the present invention, in Semiconductor substrate, for example form the knot that mixes, i.e. doped layer on the silicon substrate on the surface of presumptive area.For highly integrated semiconductor device, the degree of depth of the doped layer corresponding with source/drain region on the MOS transistor must reach 0.1 micron or lower.This is because the pipe trench effect and the junction depth of MOS transistor are closely related.That is to say that when the junction depth of doped layer shoaled, the tube passage effect of MOS transistor will improve.Whole surface in the structure that forms doped layer forms one deck intermediate dielectric layer, and this intermediate dielectric layer is made certain pattern makes the predetermined zone of this doped layer exposure with formation contact hole.At this moment, when the degree of integration of this semiconductor device increased, the thickness of this intermediate dielectric layer also increased and reduces the diameter of contact hole.Therefore, when the degree of integration of semiconductor device increased, the depth-width ratio of contact hole increased.The Semiconductor substrate 55 that forms contact hole is arranged on the susceptor 53 of the reative cell that is installed in the device that is used for forming conductive layer.In course of reaction, numerical value n is zero at the beginning in addition, determines simultaneously the process period numberical value of quantity K (step 10) that expression is required.
Subsequently, if the temperature T s of Semiconductor substrate 55 is controlled at 300-550 ℃, then can open the second, the 4th and the 5th valve V2, V4 and V5, reach preset time thereby inert gas, sacrificial metal source gas and reducing gas sprayed in the chamber 51, on the whole surface of the Semiconductor substrate 55 that forms contact hole, form initial expendable metal layer (step 11) thus.Sacrificial metal source gas and reducing gas mix in gas feed B mutually, but because the temperature among the gas feed B is low to 100-150 ℃, so they can not react mutually.At this moment, the pressure in the reative cell 51 is controlled at 10 torrs or lower.Preferably this initial expendable metal layer be can be easy to and be used for the back technology in form the metal source gas of required metal atomic layer, i.e. the metal level that reacts of the metal halide gas of forming by transition metal and halogen.For instance, in order to form the titanium atomic layer, preferably can adopt the metal halide that contains titanium, promptly titanium tetrachloride gases, titanium tetra iodide gas, titanium tetrabromide gas or titanium tetrafluoride gas are as metal halide gas.In addition, if adopt titanium tetrachloride gases as metal halide gas, then can adopt aluminium lamination, lanthanum layer, praseodymium layer, indium layer, cerium layer, neodymium layer or beryllium layer as initial expendable metal layer.At this moment, aluminium lamination is most preferred initial expendable metal layer.This is because with respect to C1 and the various parent substance shown in the table 1a, aluminium has the highest Gibbs free energy.Preferably can adopt argon gas or nitrogen as inert gas, adopt hydrogen as reducing gases.This reducing gas makes sacrificial metal source gas reduction.The Gibbs free energy of various metal halide gas is shown among table 1a, the 1b, 2,3 and 4 under 700 ° of K of absolute temperature (427 ℃).
Table 1a
The Gibbs free energy of various chloride metal halide gas under 427 ℃
Compound Gibbs free energy (kJ/mol) Compound Gibbs free energy (kJ/mol) Compound Gibbs free energy (kJ/mol)
????Al 2Cl 6 ????-1121.9 ????HfCl 3 ????-626.7 ????BeCl 2 ????-373.1
????ThCl 4 ????-895.8 ????EuCl 3 ????-621.6 ????BCl 3 ????-367.7
????UCl 5 ????-811.9 ????YbCl 3 ????-621.5 ????SiCl 3 ????-365.7
????HfCl 4 ????-804.7 ????K 2Cl 2 ????-609.8 ????SnCl 4 ????-362.3
????ZrCl 4 ????-777.6 ????Rb 2Cl 2 ????-607.6 ????InCl 3 ????-335.8
????LaCl 3 ????-708.9 ????Li 2Cl 2 ????-597.8 ????AlCl 2 ????-305.5
????PrCl 3 ????-706.9 ????SiCl 4 ????-569.6 ????TaCl 3 ????-300.1
????In 2Cl 6 ????-703.7 ????AlCl 3 ????-550.1 ????GeCl 3 ????-299.8
????CeCl 3 ????-699.5 ????Fe 2Cl 6 ????-526.8 ????MnCl 2 ????-286.4
????NdCl 3 ????-696.6 ????BaCl 2 ????-524.3 ????WCl 5 ????-285.6
????Be 2Cl 4 ????-692.6 ????SrCl 2 ????-498.1 ????CsCl ????-276.7
????TiCl 4 ????-678.3 ????TaCl 4 ????-497.5 ????ZnCl 2 ????-273.5
????GdCl 3 ????-674.3 ????CaCl 2 ????-489.1 ????WCl 4 ????-267.6
????TbCl 3 ????-668.1 ????PbCl 4 ????-462.1 ????Ti 2Cl 2 ????-259.8
????HoCl 3 ????-659.7 ????VaCl 4 ????-447.2 ????GaCl 2 ????-258.4
????ErCl 3 ????-651.7 ????GeCl 4 ????-410.8 ????SbCl 5 ????-249.9
????Cs 2Cl 2 ????-644.1 ????MgCl 2 ????-407.8 ????Cu 3Cl 3 ????-242.9
????TmCl 3 ????-641.5 ????Fe 2Cl 4 ????-406.5 ????PCl 3 ????-242.3
????TaCl 5 ????-636.6 ????GaCl 3 ????-388.6 ????FeCl 3 ????-240.6
Table 1b
The Gibbs free energy of various chloride metal halide gas under 427 ℃
Compound Gibbs free energy (kJ/mol) Compound Gibbs free energy (kJ/mol) Compound Gibbs free energy (kJ/mol)
????InCl 2 ????-240.2 ????CaCl ????-165.1 ????NiCl 2 ????-101.8
????BiCl 3 ????-238.5 ????TeCl 4 ????-136.4 ????HCl ????-98.7
????AsCl 3 ????-231.4 ????HgCl 2 ????-136.2 ????SeCl 2 ????-50.5
????SnCl 2 ????-215.8 ????TeCl 2 ????-134.6 ????BiCl ????-30.9
????BaCl ????-198.5 ????CoCl 2 ????-125.2 ????BeCl ????-6.2
????SiCl 2 ????-195.5 ????GaCl ????-123.1 ????AgCl ????29.6
????SrCl ????-181.5 ????AlCl ????-111.6 ????BCl ????74.3
????FeCl 2 ????-174.5 ????BCl 2 ????-109.9 ????SiCl ????123.7
Table 2
The various Gibbs free energies that contain the iodine metal halide gas under 427 ℃
Compound Gibbs free energy (kJ/mol) Compound Gibbs free energy (kJ/mol) Compound Gibbs free energy (kJ/mol)
???ThI 4 ????-512 ????ZrI 4 ????-409 ????TiI 4 ????-320
???Al 2I 6 ????-510 ????HfI 4 ????-405 ????PbI 4 ????-266
???K 2I 2 ????-480 ????DyI 3 ????-402 ????MgI 2 ????-239
???LaI 3 ????-457 ????TmI 3 ????-399 ????CuI ????-237
???PrI 3 ????-448 ????GdI 3 ????-388 ????CsI ????-220
???CeI 3 ????-442 ????BaI 2 ????-380 ????TaI 5 ????-202
???NdI 3 ????-438 ????UI 4 ????-377 ????SiI 4 ????-150
???Li 2I 2 ????-427 ????SrI 2 ????-353 ????HI ????-11.8
???ErI 3 ????-410 ????CaI 2 ????-338 ?????- ??????-
Table 3
The Gibbs free energy of various brominated metal halide gas under 427 ℃
Compound Gibbs free energy (kJ/mol) Compound Gibbs free energy (kJ/mol) Compound Gibbs free energy (kJ/mol)
????Al 2Br 6 ????-860 ????HoBr 3 ????-567 ????CaBr 2 ????-435
????Mg 2Br 4 ????-764 ????ErBr 3 ????-566 ????PbBr 4 ????-428
????ThBr 4 ????-743 ????TmBr 3 ????-563 ????TaBr 5 ????-424
????HfBr 4 ????-639 ????TbBr 3 ????-559 ????EuBr 2 ????-413
????ZrBr 4 ????-627 ????DyBr 3 ????-559 ????SiBr 4 ????-387
????LaBr 3 ????-621 ????GdBr 3 ????-551 ????Cu 3Br 3 ????-187
????CeBr 3 ????-616 ????Li 2Br 2 ????-534 ????WBr 6 ????-139
????PrBr 3 ????-612 ????TiBr 4 ????-527 ????HBr ????-58.6
????UBr 4 ????-602 ????Na 2Br 2 ????-510 ?????- ??????-
????NdBr 3 ????-598 ????SrBr 2 ????-453 ?????- ??????-
Table 4
The Gibbs free energy of various fluorine-containing metal halide gas under 427 ℃
Compound Gibbs free energy (kJ/mol) Compound Gibbs free energy (kJ/mol) Compound Gibbs free energy (kJ/mol)
???Al 2F 6 ????-2439 ????HfF 4 ????-1592 ????Li 3F 3 ????-1457
???UF 6 ????-1958 ????ZrF 4 ????-1587 ????PrF 3 ????-1231
???TaF 5 ????-1687 ????S 2F 10 ????-1581 ????AsF 5 ????-1080
???ThF 4 ????-1687 ????SiF 4 ????-1515 ????CuF 2 ????-287.3
???Mg 2F 4 ????-1624 ????WF 6 ????-1513 ????HF ????-277.1
???NbF 5 ????-1607 ????TiF 4 ????-1467 ????- ??????-
The metal source gas and the initial expendable metal layer that are applicable to the metal atomic layer that on Semiconductor substrate formation is required can be selected from table 1-table 4.For instance, in order to form the titanium atom layer as metal atomic layer, can adopt aluminium lamination, lanthanum layer, praseodymium layer, indium layer, cerium layer, neodymium layer or beryllium layer as initial expendable metal layer.And adopt the titanium tetrachloride metal level as metal source gas.The sacrificial metal source gas that is preferably used for forming as the aluminium lamination of initial expendable metal layer is a kind of parent substance that contains aluminium, for example (C 4H 9) 2AlH, (C 4H 9) 3AlH, (C 2H 5) 3Al, (CH 3) 3Al, AlH 3N (CH 3) 3, (CH 3) 2AlH or (CH 3) 2C 2H 5N: AlH 3The initial metal source gas that is preferably used in addition forming as the lanthanum layer of initial expendable metal layer is the parent substance that contains lanthanum, for example (C 5H 5) 3La or (C 2H 7C 4H 4) 3La, the initial metal source gas that is preferably used for forming as the praseodymium layer of initial expendable metal layer is the parent substance that contains praseodymium, for example (C 5H 5) 3Pr or (C 3H 7C 5H 4) 3Pr.In addition, the initial metal source gas that is preferably used for forming as the indium layer of initial expendable metal layer is the parent substance that contains indium, for example C 2H 5In, (CH 3) 5C 5In, (C 2H 5) 3In or (CH 3) 3In.In addition, the initial metal source gas that is preferably used for forming as the cerium layer of initial expendable metal layer is the parent substance that contains cerium, for example (C 5H 5) 3Ce or ((C 5H 5) C 5H 4) 3Ce.The initial metal source gas that is preferably used for forming as the neodymium layer of initial expendable metal layer is the parent substance that contains neodymium, for example (C 5H 5) 3Nd or (C 3H 7C 5H 4) 3Nd.In addition, the initial metal source gas that is preferably used for forming as the beryllium layer of initial expendable metal layer is the parent substance that contains beryllium, for example Be (C 2H 5) 2The parent substance that contains aluminium is most preferred parent substance as sacrificial metal source gas.This is that aluminium has higher Gibbs free energy because having halogen atom with other compares as transition elements and the above-mentioned various parent substance of said Cl, I, Br or F among the table 1-4.
If form aluminium lamination as initial expendable metal layer, then TMA (trimethyl aluminium (CH 3) 3Al) be the parent substance that typically is used as sacrificial metal source gas.At this moment, as hydrogen and the TMA gas reaction of reducing gas, thereby make CH in the TMA gas 3Be transformed into CH 4CH 4From reative cell 51, discharge and make the aluminium atomic deposition on the surface of Semiconductor substrate, form aluminium lamination.Then, form the part all around of the structure of initial expendable metal layer with inert gas purge, thereby remove the sacrificial metal source gas (step 13) (purge for the first time) that remains in the reative cell 51 fully.This reducing gas can feed in first purge.The temperature of this Semiconductor substrate remains under 300-500 ℃ in addition.In the present invention, the temperature of the Semiconductor substrate during forming initial expendable metal layer may be controlled to the temperature of Semiconductor substrate in first time purge identical or different.
In finishing the purge first time, sacrificial metal source gas, reducing gas and inert gas are sprayed in the reative cell 51, so that this sacrificial metal source gas and reducing gas react, thereby on this initial expendable metal layer, form sacrificial metal atomic layer (step 15).For instance, if adopt TMA ((CH 3) 3Al) gas and hydrogen then form aluminium lamination as the sacrificial metal atomic layer respectively as sacrificial metal source gas and reducing gas.In the present invention, this sacrificial metal atomic layer is by forming with initial expendable metal layer identical materials.For instance, if initial expendable metal layer is an aluminium lamination, this sacrificial metal atomic layer is also formed by aluminium.General this sacrificial metal atomic layer is used for forming the identical sacrificial metal source gas of initial expendable metal layer and forms.At this moment, preferably the thickness of this sacrificial metal atomic layer is the 4-5 dust.In the present invention, when the whole surface of the doped layer that exposes is covered by this sacrificial metal atomic layer, can save the technology that forms initial expendable metal layer.In other words, this initial expendable metal layer can make the metal source gas that in the metallic atom layer formation process, sprays in the reative cell 51 not with doped layer in silicon atom react.
Sweep the part all around of the structure that forms expendable metal layer with the inert gas spray, to remove the sacrificial metal source gas (step 17) (for the second time in the purge) that remains in the reative cell 51 fully.Can feed reducing gas in the purge in the second time.After finishing the purge second time, metal source gas, inert gas and reducing gas can be sprayed in the reative cell 51, to remove sacrificial metal atomic layer and initial expendable metal layer, form metal atomic layer (step 19) on the whole surface of Semiconductor substrate simultaneously.Preferably adopt the metal halide gas contain the metallic atom in the metal level that will form this moment, such as titanium tetrachloride gases as metal source gas.This inert gas is this metal source gas such as nitrogen or argon gas, such as the carrier band gas of metal halide gas.When sacrificial metal atomic layer and this initial expendable metal layer all are aluminium lamination and employing titanium tetrachloride gases during as metal halide gas,, aluminium atom in the aluminium lamination produces Al by being combined with chlorine atom in the titanium tetrachloride 2Cl 6Gas and be deposited on the Semiconductor substrate by the titanium atom that decomposes in the titanium tetrachloride forms titanium layer.Al 2Cl 6Gas is by discharging in the reative cell 51.
As show as shown in the 1A, because Al 2Cl 6Gibbs free energy be higher than titanium tetrachloride gases, this aluminium lamination can with react formation titanium layer of titanium tetrachloride gases.Can adopt TaCl 5Gas, HfCl 4Gas, ZrCl 4Gas, TiI 4Gas, TaI 5Gas, HfI 4Gas, ZrI 4Gas, TiBr 4Gas, TaBr 5Gas, HfBr 4Gas, ZrBr 4Gas, TiF 4Gas, TaF 5Gas, HfF 4Gas or ZrF 4Gas replaces TiCl 4Gas is as metal halide gas.In order to adopt HfCl 4Gas or ZrCl 4Gas forms Hf layer or Zr layer as metal halide gas, preferably adopts aluminium lamination as sacrificial metal atomic layer or initial expendable metal layer.This is because HfCl 4Gas and ZrCl 4The Gibbs free energy of gas is higher than LaCl 3Gas, PrCl 3Gas, In 2Cl 6Gas, CeCl 3Gas, NdCl 3Gas and Be 2Cl 4Gas as shown in table 1A.In addition, form required metal atomic layer in order to adopt metal halide gas, aluminium lamination is most preferred sacrificial metal atomic layer or initial expendable metal layer, as shown in table 2-4.Preferably under identical temperature, carry out step 13,15,17 and 19 (purge for the first time, form the sacrificial metal atomic layer, purge and form metal atomic layer for the second time).After forming metal atomic layer, data n increases by 1 (step 21), and the quantity k of numerical value n that increases and the circulation of being scheduled to is at the beginning compared (step 23).If the n value that increases is less than the quantity k value of at the beginning predetermined circulation, repeating step 13,15,17 and 19 (purge for the first time, form the sacrificial metal atomic layer, purge and form metal atomic layer for the second time) successively then, until the n value equals cycling numerical value k, thereby form the metal level with desired thickness in Semiconductor substrate.When the structure that will form metal level was annealed under predetermined temperature, the interface place between doped layer and metal level formed metal silicide layer.In the present invention, this metal silicide layer is a kind of ohm layer, and this layer improved the contact resistance between metal level and the doped layer.
A kind of titanium layer that a kind of embodiment according to the present invention forms is shown among Fig. 6.In Fig. 6, forming initial expendable metal layer, purging for the first time, form the sacrificial metal atomic layer, purge for the second time and form during the metal atomic layer, the temperature T s of Semiconductor substrate is 450 ℃.Initial expendable metal layer is by with TMA gas and about 10 seconds of hydrogen reaction and formed by aluminium lamination.At this moment, also nitrogen is sprayed in the reative cell.Spray in the reative cell with the flow velocity of 40sccm and 1000sccm nitrogen and hydrogen respectively and the pressure in this reative cell is approximately 3 torrs, in addition, adopt bubbler at room temperature to produce TMA gas.At this moment, TMA gas does not adopt carrier band gas.Therefore, the pressure differential of vapour pressure by TMA gas and chamber pressure and TMA gas is sprayed in the reative cell.After forming initial expendable metal layer (aluminium lamination), just no longer infeed TMA gas, purge is carried out about 5 seconds for the first time, to remove the TMA gas that remains in the reative cell fully.At this moment, nitrogen and hydrogen are sprayed into to keep continuously pressure in the reative cell under about 8 torrs.After finishing for the first time purge, spray into TMA gas about 1 second in the reative cell, hydrogen and TMA gas are reacted, form the thin sacrificial metal atomic layer of one deck, i.e. al atomic layer.No longer infeed TMA gas subsequently and to carry out the purge second time with the identical mode of the purge first time.With TiCl 4Metal source gas sprays into and reaches about 5 seconds in the reative cell, makes aluminium lamination and TiCl 4Gas reacts mutually, forms the Ti atomic layer on the whole surface of Semiconductor substrate.Then successively for the first time purge step, form the step of sacrificial metal atomic layer, purge step and the step that forms metal atomic layer repeat 50 times for the second time.
Referring to Fig. 6, can find out Ti layer according to a kind of embodiment of the present invention be depth-width ratio be 5 or higher contact hole in and be that part forms around contact hole, its uniform thickness is about 600 dusts.
In Fig. 7, trunnion axis is represented the angle of diffraction of X ray, and vertical axis is represented the intensity of X ray of the diffraction of arbitrary unit.In addition, in the figure, the angle of diffraction 2 θ scopes of the X ray between the 140-170 degree are the results who obtains by the mensuration aluminium component, and the scope between the 84-89 degree represents that the scope between the 90-96 degree is represented by measuring the result that the Cl composition obtains by measuring the result that the titanium composition obtains.
It can also be seen that by Fig. 7 the titanium layer that a kind of embodiment according to the present invention forms does not contain impurity, only contains titanium atom.
In Fig. 3 and 4, use with first kind of scheme in the identical process of identical reference number representative.
Referring to Fig. 3,4 and 5, after forming initial expendable metal layer, purge for the first time, form the sacrificial metal atomic layer, purge for the second time and forming the step 11,13,15,17 and 19 of metal atomic layer, can purge for the third time again and form in addition the step 25 and 27 of silicon atom layer, thereby form metal silicide layer.Purge 25 is carried out in the mode identical with purge 13 for the first time and for the second time and 17 for the third time.After finishing for the third time purge 25, by the silicon source gas that sprays in the reative cell 51 being reacted and on metal atomic layer, forming silicon atom layer.At this moment, during forming silicon layer, the temperature of Semiconductor substrate is remained under the temperature identical with purge for the third time 25 namely 300-500 ℃.Similar to first kind of embodiment of the present invention, if desired, repeating step 13,15,17,19,25 and 27 (purge for the first time, form the sacrificial metal atomic layer, purge, form metal atomic layer for the second time, purge and form silicon atom layer for the third time) successively, thereby alternately laminated metal atomic layer and silicon atom layer.At this moment, this metal atomic layer and silicon atom layer react mutually, can form metal silicide layer thus.The ratio of components of this metal silicide layer can change by the thickness of control metal atomic layer and silicon atom layer.Preferably this silicon source gas adopts SiH 4Gas, Si 2H 6Gas, (CH 3) 3SiC ≡ CSi (CH) 3Gas, ((CH 3) 3Si) 2CH 2Gas, (CH 3) 3CSi (CH 3) 2Cl gas, (C 4H 9) SiCl 3Gas, (CH 3) 3SiN (C 2H 5) 2Gas, (CH 3) 2SiCl 2Gas, ((CH 3) 2Si-) nGas, (C 6H 5) 2SiCl 2Gas, (C 6H 5) 2SiH 2Gas, C 2H 5SiCl 3Gas, Cl 3SiSiCl 3Gas, (CH 3) 3SiSi (CH 3) 3Gas, CH 3SiCl 2H gas, (CH 3) (C 6H 5) SiCl 2Gas, C 6H 5SiCl 3Gas, SiBr 4Gas, SiCl 4Gas, SiF 4Gas, SiI 4Gas, (C 32H 16N 8) SiCl 2Gas, Si (Si (CH 3) 3) 4Gas, Si (CH 3) 4Gas, CH 3SiCl 3Gas, HSiCl 3Gas, (C 2H 5) 3SiCl gas, CF 3Si (CH 3) 3Gas, (CH 3) 3SiCl gas, (CH 3) 3SiH gas, (CH 3) 3SiC ≡ CH gas, (C 5H 5) Si (C 3) 3Gas, (C 5(CH 3) 5) Si (CH 3) 3Gas, (C 6H 5) 3SiCl gas, (C 6H 5) 3SiH gas, ((CH 3) 2N) 3CH gas or CH 2=CHSiCl 3Gas.
According to another embodiment of the present invention, can form according to the kind of metal atomic layer suitable metal silicide layer, such as titanium silicide layer, silication tantalum layer, zirconium silicide layer or silication hafnium layer.In addition, can also in having the contact hole of large ratio of height to width, form metal silicide layer with good step coverage.
As above said, according to the present invention, in having the contact hole of large ratio of height to width, can form metal level or metal silicide layer with good step coverage.Therefore, can form the metal interconnected of the semiconductor device that is applicable to Highgrade integration.
The invention is not restricted to said embodiment, those skilled in the art can also make multiple variation and change within the scope of the invention.

Claims (56)

1. method that is used to form metal level, it comprises the following steps:
(a) on Semiconductor substrate, form one deck sacrificial metal atomic layer;
(b) thus by make this sacrificial metal atomic layer and metal halide gas the reaction remove this sacrificial metal atomic layer, form a kind of metal atomic layer simultaneously; And
(c) by alternately forming sacrifice atomic layer and metal atomic layer at least one times with stacked multiple layer metal atomic layer on this Semiconductor substrate.
2. the method for claim 1, it also be included in form the sacrificial metal atomic layer step (a) before, on this Semiconductor substrate, form the step of initial expendable metal layer.
3. the method for claim 2 wherein when forming this initial expendable metal layer, is heated to 300-500 ℃ with this Semiconductor substrate.
4. the method for claim 2, this initial expendable metal layer is by forming with sacrificial metal atomic layer identical materials.
5. the method for claim 2, wherein this initial expendable metal layer is to adopt the reacting gas formation identical with the reacting gas that is used to form the sacrificial metal atomic layer.
6. the process of claim 1 wherein when forming this sacrificial metal atomic layer and this metal atomic layer, this Semiconductor substrate is heated to 300-500 ℃.
7. the process of claim 1 wherein that the Gibbs free energy of the compound be made up of the halogen atom in the metallic atom in this sacrificial metal atomic layer and this metal halide gas is higher than the Gibbs free energy of this metal halide.
8. the method for claim 7, wherein this sacrificial metal atomic layer forms by sacrificial metal source gas and a kind of reducing gas are reacted mutually.
9. the method for claim 8, wherein this reducing gas is selected from hydrogen and silane gas.
10. the method for claim 7, wherein metal halide gas can be selected from TiCl 4Gas, TaCl 5Gas, HfCl 4Gas, ZrCl 4Gas, TiI 4Gas, TaI 5Gas, HfI 4Gas, ZrI 4Gas, TiBr 4Gas, TaBr 5Gas, HfBr 4Gas, ZrBr 4Gas, TiF 4Gas, TaF 5Gas, HfF 4Gas and ZrF 4Gas.
11. the method for claim 10 wherein when this metal halide gas is titanium tetrachloride gases, can adopt aluminium lamination, lanthanum layer, praseodymium layer, indium layer, cerium layer, neodymium layer or beryllium layer as expendable metal layer.
12. the method for claim 11, the sacrificial metal source gas that wherein is used for aluminium lamination, lanthanum layer, praseodymium layer, indium layer, cerium layer, neodymium layer or beryllium layer is the parent substance that contains aluminium, lanthanum, praseodymium, indium, cerium, neodymium or beryllium respectively.
13. the method for claim 12, the parent substance that wherein contains aluminium is selected from (C 4H 9) 2AlH, (C 4H 9) 3AlH, (C 2H 5) 3Al, (CH 3) 3Al, AlH 3N (CH 3) 3, (CH 3) 2AlH and (CH 3) 2C 2H 5N: AlH 3
14. the method for claim 12, the parent substance that wherein contains lanthanum is selected from (C 5H 5) 3La and (C 2H 7C 4H 4) 3La.
15. the method for claim 12, the parent substance that wherein contains praseodymium is selected from (C 5H 5) 3Pr and (C 3H 7C 5H 4) 3Pr.
16. the method for claim 12, the parent substance that wherein contains indium is selected from C 2H 5In, (CH 3) 5C 5In, (C 2H 5) 3In and (CH 3) 3In.
17. the method for claim 12, the parent substance that wherein contains cerium is selected from (C 5H 5) 3Ce and ((C 5H 5) C 5H 4) 3Ce.
18. the method for claim 12, the parent substance that wherein contains neodymium is selected from (C 5H 5) 3Nd and (C 3H 7C 5H 4) 3Nd.
19. the method for claim 12, the parent substance that wherein contains beryllium is Be (C 2H 5) 2
20. the method for claim 2, it also further be included in form this sacrificial metal atomic layer step (a) before, form with inert gas purge this expendable metal layer structure around the step of part.
21. the method for claim 1, it also further be included in form this metal atomic layer step (b) before, form with inert gas purge this expendable metal layer structure around the step of part.
22. the method for claim 20, wherein this inert gas is selected from nitrogen and argon gas.
23. the method for claim 21, wherein this inert gas is selected from nitrogen and argon gas.
24. the method for claim 1, the step (c) that it also further is included in stacked multiple layer metal atomic layer afterwards, multiple layer metal atomic layer and Semiconductor substrate are reacted mutually by adopting annealing process, thereby the step that forms ohm layer at the interface between this Semiconductor substrate and multiple layer metal atomic layer.
25. the method for claim 24, wherein in annealing process, environmental gas is selected from argon gas, nitrogen and NH 3Gas.
26. the method for claim 24, wherein this ohm layer is a metal silicide layer.
27. a method that is used to form metal silicide layer, it comprises the following steps:
On Semiconductor substrate, form one deck sacrificial metal atomic layer;
Thereby by making the reaction of this sacrificial metal atomic layer and metal halide gas remove this sacrificial metal atomic layer, form simultaneously a kind of metal atomic layer;
On this metal atomic layer, form silicon atom layer; And
Sacrifice atomic layer, metal atomic layer and silicon atom layer at least one times to stack gradually multiple layer metal atomic layer and multilayer silicon atom layer in this Semiconductor substrate by forming successively.
28. the method for claim 27, it also is included in before the step that forms the sacrificial metal atomic layer, form the step of initial expendable metal layer on this Semiconductor substrate.
29. the method for claim 28 wherein when forming this initial expendable metal layer, is heated to 300-500 ℃ with this Semiconductor substrate.
30. the method for claim 28, this initial expendable metal layer is by forming with sacrificial metal atomic layer identical materials.
31. the method for claim 28, wherein this initial expendable metal layer is to adopt the reacting gas identical with the reacting gas that is used to form the sacrificial metal atomic layer to form.
32. the method for claim 27 wherein when forming this sacrificial metal atomic layer, this metal atomic layer and this silicon atom layer, is heated to 300-500 ℃ with this Semiconductor substrate.
33. the method for claim 27, wherein the Gibbs free energy of the compound of being made up of the halogen atom in the metallic atom in this sacrificial metal atomic layer and this metal halide gas is higher than the Gibbs free energy of this metal halide.
34. the method for claim 33, wherein this sacrificial metal atomic layer forms by sacrificial metal source gas and a kind of reducing gas are reacted mutually.
35. the method for claim 34, wherein this reducing gas is selected from hydrogen and silane gas.
36. the method for claim 35, wherein metal halide gas can be selected from TiCl 4Gas, TaCl 5Gas, HfCl 4Gas, ZrCl 4Gas, TiI 4Gas, TaI 5Gas, HfI 4Gas, ZrI 4Gas, TiBr 4Gas, TaBr 5Gas, HfBr 4Gas, ZrBr 4Gas, TiF 4Gas, TaF 5Gas, HfF 4Gas and ZrF 4Gas.
37. the method for claim 36 wherein when this metal halide gas is titanium tetrachloride gases, can adopt aluminium lamination, lanthanum layer, praseodymium layer, indium layer, cerium layer, neodymium layer or beryllium layer as expendable metal layer.
38. the method for claim 37, the sacrificial metal source gas that wherein is used for aluminium lamination, lanthanum layer, praseodymium layer, indium layer, cerium layer, neodymium layer or beryllium layer is the parent substance that contains aluminium, lanthanum, praseodymium, indium, cerium, neodymium or beryllium respectively.
39. the method for claim 38, the parent substance that wherein contains aluminium is selected from (C 4H 9) 2AlH, (C 4H 9) 3AlH, (C 2H 5) 3Al, (CH 3) 3Al, AlH 3N (CH 3) 3, (CH 3) 2AlH and (CH 3) 2C 2H 5N: AlH 3
40. the method for claim 38, the parent substance that wherein contains lanthanum is selected from (C 5H 5) 3La and (C 2H 7C 4H 4) 3La.
41. the method for claim 38, the parent substance that wherein contains praseodymium is selected from (C 5H 5) 3Pr and (C 3H 7C 5H 4) 3Pr.
42. the method for claim 38, the parent substance that wherein contains indium is selected from C 2H 5In, (CH 3) 5C 5In, (C 2H 5) 3In and (CH 3) 3In.
43. the method for claim 38, the parent substance that wherein contains cerium is selected from (C 5H 5) 3Ce and ((C 5H 5) C 5H 4) 3Ce.
44. the method for claim 38, the parent substance that wherein contains neodymium is selected from (C 5H 5) 3Nd and (C 3H 7C 5H 4) 3Nd.
45. the method for claim 38, the parent substance that wherein contains beryllium is Be (C 2H 5) 2
46. the method for claim 28, it also further is included in before the step that forms this sacrificial metal atomic layer, forms the step of part all around of the structure of this expendable metal layer with inert gas purge.
47. the method for claim 27, it also further is included in before the step that forms this metal atomic layer, forms the step of part all around of the structure of this expendable metal layer with inert gas purge.
48. the method for claim 27, it also further is included in before the step that forms this silicon atom layer, forms the step of part all around of the structure of this metal atomic layer with inert gas purge.
49. the method for claim 46, wherein this inert gas is selected from nitrogen and argon gas.
50. the method for claim 47, wherein this inert gas is selected from nitrogen and argon gas.
51. the method for claim 48, wherein this inert gas is selected from nitrogen and argon gas.
52. the method for claim 27, wherein this silicon atom layer forms by reacting with silicon source gas.
53. the method for claim 52, wherein this silicon source gas is selected from SiH 4Gas, Si 2H 6Gas, (CH 3) 3SiC ≡ CSi (CH) 3Gas, ((CH 3) 3Si) 2CH 2Gas, (CH 3) 3CSi (CH 3) 2Cl gas, (C 4H 9) SiCl 3Gas, (CH 3) 3SiN (C 2H 5) 2Gas, (CH 3) 2SiCl 2Gas, ((CH 3) 2Si-) nGas, (C 6H 5) 2SiCl 2Gas, (C 6H 5) 2SiH 2Gas, C 2H 5SiCl 3Gas, Cl 3SiSiCl 3Gas, (CH 3) 3SiSi (CH 3) 3Gas, CH 3SiCl 2H gas, (CH 3) (C 6H 5) SiCl 2Gas, C 6H 5SiCl 3Gas, SiBr 4Gas, SiCl 4Gas, SiF 4Gas, SiI 4Gas, (C 32H 16N 8) SiCl 2Gas, Si (Si (CH 3) 3) 4Gas, Si (CH 3) 4Gas, CH 3SiCl 3Gas, HSiCl 3Gas, (C 2H 5) 3SiCl gas, CF 3Si (CH 3) 3Gas, (CH 3) 3SiCl gas, (CH 3) 3SiH gas, (CH 3) 3SiC ≡ CH gas, (C 5H 5) Si (CH 3) 3Gas, (C 5(CH 3) 5) Si (CH 3) 3Gas, (C 6H 5) 3SiCl gas, (C 6H 5) 3SiH gas, ((CH 3) 2N) 3CH gas and CH 2=CHSiCl 3Gas.
54. the method for claim 27, it also further is included in after the step that replaces stacked this metal atomic layer and silicon atom layer on the Semiconductor substrate, the step of annealing under predetermined temperature.
55. the method for claim 54, wherein annealing process is by a kind of the carrying out in Fast Heating technology, kiln annealing process and the vacuum heat treatment process.
56. a method that is used to form metal silicide layer, it comprises the following steps:
On this Semiconductor substrate, form silicon atom layer;
Form one deck sacrificial metal atomic layer at this silicon atom layer;
Thereby, form a kind of metal atomic layer simultaneously by making the reaction of this sacrificial metal atomic layer and metal halide gas remove this sacrificial metal atomic layer; And
By forming silicon atom layer, sacrificial metal atomic layer and metal atomic layer successively at least once with alternately stacked successively multilayer silicon atom layer and multiple layer metal atomic layer on this Semiconductor substrate.
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