CN1215342C - Film gas sensor - Google Patents
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- CN1215342C CN1215342C CN 03116787 CN03116787A CN1215342C CN 1215342 C CN1215342 C CN 1215342C CN 03116787 CN03116787 CN 03116787 CN 03116787 A CN03116787 A CN 03116787A CN 1215342 C CN1215342 C CN 1215342C
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Abstract
The present invention discloses a film gas sensor which comprises two substrates of same material, wherein one surface of one substrate is provided with a groove, and a disorder film system is plated on the surface with the groove; the two surfaces of the other substrate are plane surfaces, and a disorder film system is plated on any of the plane surfaces; special micron pellet adhesive is stuck on the edges of both sides of the disorder film systems, so the disorder film systems are fixedly connected into a whole, and a sample chamber is arranged between the disorder film systems; the height differences of the inside and the outside of the groove respectively correspond to two different band pass peak positions, one of the band pass peak position is arranged at a characteristic absorption peak of gas to be checked, the other band pass peak position is arranged in a non-absorption area near the characteristic absorption peak as a referential peak position, and the content of gas is detected by the relative change of transmittance peak intensity, which is caused by gas absorption. The film gas sensor of the present invention has the greatest advantage that the film gas sensor can be designed according to the gas of any known characteristic absorption peak, so the response of the film gas sensor is unique. Meanwhile, the sensor also has the advantages of high sensitivity, rapid response, good selectivity, good repeatability, long service life, etc. The present invention largely makes up for the defect of traditional gas sensors that various kinds of performance can not be simultaneously guaranteed.
Description
Technical field
The present invention relates to gas sensor, specifically be meant a kind of broad spectrum type thin film gas sensor.
Background technology
Present existing gas sensor is of a great variety, by used gas sensitive and gas-sensitive property difference, can be divided into semiconductor-type, solid electrolyte formula, electric chemical formula, catalytic combustion type, high score minor etc.
1, semiconductor gas sensor
This sensor mainly uses semiconductor air-sensitive material, can be divided into two kinds of resistance-type and non-resistance-types according to detecting air-sensitive characteristic quantity mode difference.Gas Sensors of Electric Resistance Semiconductors is to work with the situation of change of gas content by the resistance that detects gas sensor, mainly uses the metal oxide ceramic gas sensitive.Non-Gas Sensors of Electric Resistance Semiconductors is to utilize the curtage of gas sensor to work with the gas content variation.Mainly contain MOS diode-type and junction diode formula, and FET gas sensor.Detected gas mostly is inflammable gass such as hydrogen, silane greatly.The resistance value of semiconductor gas sensor in gas to be checked and environment temperature, humidity are relevant.Generally speaking, when environment temperature was low, the resistance value of sensor was higher; Resistance value was low when temperature was high.And humidity resistance value height when low; Resistance value was low when humidity was high.Even in the gas to be checked of same concentrations, the resistance of sensor is also different, therefore must in circuit, be compensated.
2, solid-state electrolyte gas sensor
This gas sensor uses the solid electrolyte gas sensitive to do gas sensor.Its principle is that gas produces ion by gas sensitive the time, thereby forms electromotive force, comes measure gas concentrations by measuring electromotive force, as measuring H
2The YST-Au-WO of S
3Deng.
3, catalytic combustion type gas sensor
This gas sensor can be divided into two kinds of direct catalytic combustion type and catalytic Contact combustion-types.Its principle of work is: gas sensitive is under "on" position, the inflammable gas oxidizing fire or under catalyst action oxidizing fire, the heat that produces heats up the heating wire of sensor, thereby its resistance value is changed, and changes by measuring resistance and comes measure gas concentrations.This sensor can only be measured inflammable gas, and is insensitive to non-flammable gases.
4, macromolecule gas sensor
The macromolecule gas sensitive is when running into specific gas, its resistance, specific inductive capacity, material surface acoustic wave propagation velocity and physical properties such as frequency, material weight change, and mainly contain phthalocyanine polymer, LB film, benzene cyanines ethyl-acetylene, polyvinyl alcohol (PVA)-phosphoric acid, polyisobutylene, amino undecyl silane etc.According to the gas-sensitive property of material therefor, this class sensor can be divided into: come the high molecular resistance type gas sensor of measure gas concentrations by the resistance of measuring gas sensitive; Form concentration cell when absorbing gas, measure the concentration cell formula gas sensor that electromotive force is determined gas concentration according to gas sensitive; Absorb the sonic surface wave gas sensors that principle that sound wave behind the gas changes in material surface velocity of propagation or frequency is made according to the macromolecule gas sensitive; And absorb weight change is made behind the gas quartz vibrator formula gas sensor etc. according to the macromolecule gas sensitive.The macromolecule gas sensor has the specific gas molecule highly sensitive, and selectivity is good, and is simple in structure, can use at normal temperatures.
Though present existing gas sensor is of a great variety, principle has nothing in common with each other, but every type sensor all can only be effective to some specific gas, and Selectivity of Sensor and the scope of application can not be taken into account, if promptly selectivity is good, then detectable gaseous species is few, if detectable gaseous species is many, then selectivity is just not high.
Summary of the invention
Based on the above-mentioned shortcoming of traditional gas sensor, and the gas that all can't survey at present all gases sensor, people expect to construct a kind of new senser element and are solved.Purpose of the present invention is exactly a kind of thin film gas sensor that proposes for addressing the above problem.
Technical scheme of the present invention is: design the double-deck super narrow bandpass optical filter of a dual band pass, it between two layers the sample chamber, with the characteristic absorption peak of the logical peak position design of one of them band to gas to be checked, near the non-uptake zone of the logical peak position design of another band characteristic absorption peak position be as the reference peak position, utilizes the relative variation of the transmission peaks intensity that gas absorption causes to realize the detection of gas content.
Thin film gas sensor of the present invention comprises: the substrate 1 of two same materials, and wherein there is a groove 2 on a surface of a slice substrate, and it is 3 that the surface that has a groove is coated with unordered type film.Two surfaces of another sheet substrate are the plane, and it is that 3, two unordered type films that substrate surface plated are identical that its arbitrary plane is coated with unordered type film.Dual side-edge edge between two unordered type films are is stained with extraordinary micron bead viscose glue 4, makes its affixed being integral, and the centre is sample chamber 5.Because the difference in height inside and outside the groove 2 causes the range difference between the unordered type film of the levels of the zones of different system in the sample chamber, these two the logical peak positions of corresponding two the different bands of different pitch area.Similar of the present invention is in the F-P interferometer, and the control of two spacings is according to the F-P interference condition: have only the light when spacing satisfies the half-wavelength integral multiple to see through.
Said groove 2 degree of depth are:
λ
LongBe that band than long-wave band leads to the wavelength of peak position, λ in two logical peak positions of band
ShortBe that band than short-wave band leads to the wavelength of peak position in two logical peak positions of band, wherein m, n are integer.A said extraordinary micron bead viscose glue is a macromolecule polymer material, its slightly larger in diameter in
Generally get
Be advisable.Then by pressurization is adjusted to bead generation deformation to the micron bead
Thereby make two logical peak positions of band be adjusted to the position of design.Said unordered type film is to be to be made of for 12 times the silicon film of high index of refraction and the silica coating alternative stacked of low-refraction, the thickness of each rete is the bed thickness of random fluctuation, and its production method is asked for an interview the inventor's patent " super narrow bandpass optical film filter and thicknesses of layers production method " China Patent No.: 01139082.4.
The great advantage of thin film gas sensor of the present invention is to design at the gas of any known features absorption peak position, makes response have uniqueness.Have highly sensitive, advantages such as response is fast, selectivity is high, good stability, good reproducibility, life-span length simultaneously, remedied the shortcoming that the various performances of traditional gas sensor can not be taken into account greatly.
Description of drawings
Fig. 1 is the structural representation of sensor chip of the present invention;
Fig. 2 is the structural representation that unordered type film is;
Fig. 3 is H
2The infrared absorpting light spectra of S gas;
Fig. 4 is H
2The transmission spectrum of S gas sensor when no detected gas;
Fig. 5 is H
2The transmission spectrum of S gas sensor when detected gas is arranged;
Fig. 6 is the infrared absorpting light spectra of CO gas;
Fig. 7 is the infrared absorpting light spectra of HCHO gas;
Fig. 8 is CS
2The infrared absorpting light spectra of gas;
Fig. 9 is SO
2The infrared absorpting light spectra of gas.
Embodiment
Below in conjunction with accompanying drawing, with sulfuretted hydrogen (H
2S) gas sensor is an example, and the specific embodiment of the present invention is described in further detail.
1. dual band pass chooses
See Fig. 3, as can be seen from the figure, H
2S is at 3.38 μ m (2960cm
-1) locate a very strong absorption peak, get it and lead to for tested gas characteristic absorption band; Get a H in its proximity again
2The non-absorbent substantially band of S is logical, and present embodiment is got 3.23 μ m.
2. the preparation of groove
The degree of depth of groove is by formula:
Decision, it is 771nm that present embodiment is got depth of groove, etches groove 2 by semi-conductive ion etching technology on Si substrate 1 part surface.
3. unordered type film is 3 design
Unordered type film is 3 to be to be made of for 12 times the silicon film 301 of high index of refraction silica coating 302 alternative stacked with low-refraction, the thickness of each rete has a fluctuation at random, at first 1/4 wavelength place with every layer material optical thickness is a reference point, then every layer optical thickness is done the variation of a random fluctuation, the random fluctuation bed thickness sees Table 1.
4. the evaporation that unordered type film is
Adopt conventional thermal evaporation coating machine, on the silicon substrate of cutting, press sequence number order in the table 1, the 24th layer of beginning plated film from the sequence number maximum, be plated to the 1st layer successively, the inside and outside evaporation simultaneously of groove during owing to plated film, so the inside and outside film that is coated with of groove is identical.
5.H
2The preparation of S gas sensor
The unordered type film that plating is good is that 3 substrate 1 is divided into two, wherein a slice is the smooth fully film system in surface, another sheet is a film system of containing groove part, at two unordered type films is that to be stained with diameter be the extraordinary micron of 10 μ m bead viscose glues 4 to the dual side-edge edge, make two to have affixed being integral of substrate that unordered type film is, the centre is sample chamber 5.Because viscose glue is made up of even-grained plastic beads, under the effect of pressure, can sprawl into single layer structure, regulate pressure and make plastic beads generation deformation, thereby the band of the distance adjustment to two between two leads to the peak position up and down.Heating makes the glue typing then, fixing distance between two up and down.Though two films that are coated with are identical up and down, the distance between two is different up and down with the groove exterior domain for the groove inner region in this structure, therefore is in the logical peak position of different bands respectively, and the groove inner region is H
2The characteristic absorption peak position 3.38 μ m of S, the groove exterior domain is H
2The reference peak position that sees through the fully 3.23 μ m of S.In sample chamber 5, there is not H
2When S gas existed, the relative intensity of these two transmission peaks was certain, sees Fig. 4; In sample chamber 5, H is arranged
2When S gas exists, because 3.38 μ m are in H
2The characteristic absorption peak place of S, and 3.23 μ m are in H
2The non-uptake zone of S, the transmission peaks at 3.38 μ m places can be because of H
2The absorption of S and weakening, and the transmission peaks intensity at 3.23 μ m places remains unchanged, and sees Fig. 5.
Therefore the transmission peaks that we can 3.23 μ m places is reference, records the intensity d of the transmission peaks at 3.38 μ m places with respect to 3.23 μ m place transmission peaks earlier
0=I
3.38/ I
3.23, and then there is H in survey
2Transmission spectrum during S gas is because H
2The existence of S gas, the light at 3.38 μ m places can be by H
2The S strong absorption makes transmitance descend, and the light at 3.23 μ m places is not by H
2S absorbs, and causes two transmission peaks relative intensity d=I '
3.38/ I '
3.23Variation, just can measure H from the variation of two transmission peaks relative intensity d
2The content of S.
According to structure recited above and embodiment, the inventor also provides following several embodiment:
1. carbon monoxide (CO) gas sensor
See Fig. 6, as can be seen from the figure CO is at 4.63 μ m (2160cm
-1) locate a very strong absorption peak, get it and lead to for tested gas characteristic absorption band; Get the logical 4.35 μ m of a non-absorbent substantially band of CO again in its non-uptake zone that closes on.Depth of groove is got 784nm, and little bulb diameter is 14 μ m.Substrate is a silicon, and unordered type film of evaporation is to see Table 2 on it.
2. formaldehyde (HCHO) gas sensor
See Fig. 7, as can be seen from the figure HCHO is at 5.65 μ m (1770cm
-1) locate a very strong absorption peak, get it and lead to for tested gas characteristic absorption band; Close on non-uptake zone at it again and get the logical 5.40 μ m of a non-absorbent substantially band of HCHO.Depth of groove is got 771nm, and little bulb diameter is 17 μ m.Substrate is a silicon, and unordered type film of evaporation is to see Table 3 on it.
3. carbon disulphide (CS
2) gas sensor
See Fig. 8, as can be seen from the figure CS
2At 6.67 μ m (1500cm
-1) locate a very strong absorption peak, get it and lead to for tested gas characteristic absorption band; Get a CS in its proximity again
2Substantially non-absorbent band leads to 6.90 μ m.Depth of groove is got 762nm, and little bulb diameter is 20 μ m.Substrate is a silicon, and unordered type film of evaporation is to see Table 4 on it.
4. sulphuric dioxide (SO
2) gas sensor
See Fig. 9, as can be seen from the figure SO
2At 7.31 μ m (1368cm
-1) locate a very strong absorption peak, get it and lead to for tested gas characteristic absorption band; Get a SO in its proximity again
2Substantially non-absorbent band leads to 7.69 μ m.Depth of groove is got 775nm, and little bulb diameter is 22 μ m.Substrate is a silicon, and unordered type film of evaporation is to see Table 5 on it.
Table 1 H
2The unordered type film of S gas sensor is
| The rete sequence number | Refractive index | Thickness (nanometer) |
| 1 | Silicon dioxide: n=1.46, k=1e-5 | 80.6 |
| 2 | Silicon: n=3.4, k=1.7e-4 | 74.7 |
| 3 | Silicon dioxide: n=1.46, k=1e-5 | 34.0 |
| 4 | Silicon: n=3.4, k=1.7e-4 | 130.8 |
| 5 | Silicon dioxide: n=1.46, k=1e-5 | 413.9 |
| 6 | Silicon: n=3.4, k=1.7e-4 | 39.4 |
| 7 | Silicon dioxide: n=1.46, k=1e-5 | 449.9 |
| 8 | Silicon: n=3.4, k=1.7e-4 | 277.5 |
| 9 | Silicon dioxide: n=1.46, k=1e-5 | 449.9 |
| 10 | Silicon: n=3.4, k=1.7e-4 | 115.5 |
| 11 | Silicon dioxide: n=1.46, k=1e-5 | 449.9 |
| 12 | Silicon: n=3.4, k=1.7e-4 | 95.1 |
| 13 | Silicon dioxide: n=1.46, k=1e-5 | 449.9 |
| 14 | Silicon: n=3.4, k=1.7e-4 | 74.7 |
| 15 | Silicon dioxide: n=1.46, k=1e-5 | 449.9 |
| 16 | Silicon: n=3.4, k=1.7e-4 | 824.8 |
| 17 | Silicon dioxide: n=1.46, k=1e-5 | 449.9 |
| 18 | Silicon: n=3.4, k=1.7e-4 | 221.9 |
| 19 | Silicon dioxide: n=1.46, k=1e-5 | 449.9 |
| 20 | Silicon: n=3.4, k=1.7e-4 | 351.2 |
| 21 | Silicon dioxide: n=1.46, k=1e-5 | 407.9 |
| 22 | Silicon: n=3.4, k=1.7e-4 | 266.0 |
| 23 | Silicon dioxide: n=1.46, k=1e-5 | 449.9 |
| 24 | Silicon: n=3.4, k=1.7e-4 | 303.7 |
The unordered type film of table 2 CO gas sensor is
| The rete sequence number | Refractive index | Thickness (nanometer) |
| 1 | Silicon dioxide: n=1.46, k=1e-5 | 110.4 |
| 2 | Silicon: n=3.4, k=1.7e-4 | 102.3 |
| 3 | Silicon dioxide: n=1.46, k=1e-5 | 46.6 |
| 4 | Silicon: n=3.4, k=1.7e-4 | 179.2 |
| 5 | Silicon dioxide: n=1.46, k=1e-5 | 566.9 |
| 6 | Silicon: n=3.4, k=1.7e-4 | 54.0 |
| 7 | Silicon dioxide: n=1.46, k=1e-5 | 616.2 |
| 8 | Silicon: n=3.4, k=1.7e-4 | 380.1 |
| 9 | Silicon dioxide: n=1.46, k=1e-5 | 616.2 |
| 10 | Silicon: n=3.4, k=1.7e-4 | 158.2 |
| 11 | Silicon dioxide: n=1.46, k=1e-5 | 616.2 |
| 12 | Silicon: n=3.4, k=1.7e-4 | 130.3 |
| 13 | Silicon dioxide: n=1.46, k=1e-5 | 616.2 |
| 14 | Silicon: n=3.4, k=1.7e-4 | 102.3 |
| 15 | Silicon dioxide: n=1.46, k=1e-5 | 616.2 |
| 16 | Silicon: n=3.4, k=1.7e-4 | 1129.7 |
| 17 | Silicon dioxide: n=1.46, k=1e-5 | 616.2 |
| 18 | Silicon: n=3.4, k=1.7e-4 | 303.9 |
| 19 | Silicon dioxide: n=1.46, k=1e-5 | 616.2 |
| 20 | Silicon: n=3.4, k=1.7e-4 | 481.0 |
| 21 | Silicon dioxide: n=1.46, k=1e-5 | 558.7 |
| 22 | Silicon: n=3.4, k=1.7e-4 | 364.3 |
| 23 | Silicon dioxide: n=1.46, k=1e-5 | 616.2 |
| 24 | Silicon: n=3.4, k=1.7e-4 | 416.0 |
The unordered type film of table 3 HCHO gas sensor is
| The rete sequence number | Refractive index | Thickness (nanometer) |
| 1 | Silicon dioxide: n=1.46, k=1e-5 | 134.8 |
| 2 | Silicon: n=3.4, k=1.7e-4 | 124.9 |
| 3 | Silicon dioxide: n=1.46, k=1e-5 | 56.9 |
| 4 | Silicon: n=3.4, k=1.7e-4 | 218.8 |
| 5 | Silicon dioxide: n=1.46, k=1e-5 | 692.2 |
| 6 | Silicon: n=3.4, k=1.7e-4 | 65.9 |
| 7 | Silicon dioxide: n=1.46, k=1e-5 | 752.4 |
| 8 | Silicon: n=3.4, k=1.7e-4 | 464.1 |
| 9 | Silicon dioxide: n=1.46, k=1e-5 | 752.4 |
| 10 | Silicon: n=3.4, k=1.7e-4 | 193.2 |
| 11 | Silicon dioxide: n=1.46, k=1e-5 | 752.4 |
| 12 | Silicon: n=3.4, k=1.7e-4 | 159.1 |
| 13 | Silicon dioxide: n=1.46, k=1e-5 | 752.4 |
| 14 | Silicon: n=3.4, k=1.7e-4 | 124.9 |
| 15 | Silicon dioxide: n=1.46, k=1e-5 | 752.4 |
| 16 | Silicon: n=3.4, k=1.7e-4 | 1379.4 |
| 17 | Silicon dioxide: n=1.46, k=1e-5 | 752.4 |
| 18 | Silicon: n=3.4, k=1.7e-4 | 371.1 |
| 19 | Silicon dioxide: n=1.46, k=1e-5 | 752.4 |
| 20 | Silicon: n=3.4, k=1.7e-4 | 587.4 |
| 21 | Silicon dioxide: n=1.46, k=1e-5 | 682.2 |
| 22 | Silicon: n=3.4, k=1.7e-4 | 444.9 |
| 23 | Silicon dioxide: n=1.46, k=1e-5 | 752.4 |
| 24 | Silicon: n=3.4, k=1.7e-4 | 507.9 |
Table 4 CS
2The unordered type film of gas sensor is
| The rete sequence number | Refractive index | Thickness (nanometer) |
| 1 | Silicon dioxide: n=1.46, k=1e-5 | 159.1 |
| 2 | Silicon: n=3.4, k=1.7e-4 | 147.5 |
| 3 | Silicon dioxide: n=1.46, k=1e-5 | 67.1 |
| 4 | Silicon: n=3.4, k=1.7e-4 | 258.2 |
| 5 | Silicon dioxide: n=1.46, k=1e-5 | 817.0 |
| 6 | Silicon: n=3.4, k=1.7e-4 | 77.8 |
| 7 | Silicon dioxide: n=1.46, k=1e-5 | 888.1 |
| 8 | Silicon: n=3.4, k=1.7e-4 | 547.8 |
| 9 | Silicon dioxide: n=1.46, k=1e-5 | 888.1 |
| 10 | Silicon: n=3.4, k=1.7e-4 | 228.0 |
| 11 | Silicon dioxide: n=1.46, k=1e-5 | 888.1 |
| 12 | Silicon: n=3.4, k=1.7e-4 | 187.7 |
| 13 | Silicon dioxide: n=1.46, k=1e-5 | 888.1 |
| 14 | Silicon: n=3.4, k=1.7e-4 | 147.5 |
| 15 | Silicon dioxide: n=1.46, k=1e-5 | 888.1 |
| 16 | Silicon: n=3.4, k=1.7e-4 | 1628.1 |
| 17 | Silicon dioxide: n=1.46, k=1e-5 | 888.1 |
| 18 | Silicon: n=3.4, k=1.7e-4 | 438.0 |
| 19 | Silicon dioxide: n=1.46, k=1e-5 | 888.1 |
| 20 | Silicon: n=3.4, k=1.7e-4 | 693.2 |
| 21 | Silicon dioxide: n=1.46, k=1e-5 | 805.2 |
| 22 | Silicon: n=3.4, k=1.7e-4 | 525.1 |
| 23 | Silicon dioxide: n=1.46, k=1e-5 | 888.1 |
| 24 | Silicon: n=3.4, k=1.7e-4 | 599.5 |
Table 5 SO
2The unordered type film of gas sensor is
| The rete sequence number | Refractive index | Thickness (nanometer) |
| 1 | Silicon dioxide: n=1.46, k=1e-5 | 174.4 |
| 2 | Silicon: n=3.4, k=1.7e-4 | 161.6 |
| 3 | Silicon dioxide: n=1.46, k=1e-5 | 73.6 |
| 4 | Silicon: n=3.4, k=1.7e-4 | 283.0 |
| 5 | Silicon dioxide: n=1.46, k=1e-5 | 895.6 |
| 6 | Silicon: n=3.4, k=1.7e-4 | 85.3 |
| 7 | Silicon dioxide: n=1.46, k=1e-5 | 973.5 |
| 8 | Silicon: n=3.4, k=1.7e-4 | 600.4 |
| 9 | Silicon dioxide: n=1.46, k=1e-5 | 973.5 |
| 10 | Silicon: n=3.4, k=1.7e-4 | 249.9 |
| 11 | Silicon dioxide: n=1.46, k=1e-5 | 973.5 |
| 12 | Silicon: n=3.4, k=1.7e-4 | 205.8 |
| 13 | Silicon dioxide: n=1.46, k=1e-5 | 973.5 |
| 14 | Silicon: n=3.4, k=1.7e-4 | 161.6 |
| 15 | Silicon dioxide: n=1.46, k=1e-5 | 973.5 |
| 16 | Silicon: n=3.4, k=1.7e-4 | 1784.7 |
| 17 | Silicon dioxide: n=1.46, k=1e-5 | 973.5 |
| 18 | Silicon: n=3.4, k=1.7e-4 | 480.1 |
| 19 | Silicon dioxide: n=1.46, k=1e-5 | 973.5 |
| 20 | Silicon: n=3.4, k=1.7e-4 | 759.9 |
| 21 | Silicon dioxide: n=1.46, k=1e-5 | 882.6 |
| 22 | Silicon: n=3.4, k=1.7e-4 | 575.6 |
| 23 | Silicon dioxide: n=1.46, k=1e-5 | 973.5 |
| 24 | Silicon: n=3.4, k=1.7e-4 | 657.1 |
Claims (1)
1. thin film gas sensor, comprising: the substrate of two same materials (1) is characterized in that: wherein there is a groove (2) on a surface of a slice substrate, and the surface that has groove is coated with unordered type film system (3); Two surfaces of another sheet substrate are the plane, and its arbitrary plane is coated with unordered type film system (3); Dual side-edge edge between two unordered type film systems (3) is stained with extraordinary micron bead viscose glue (4), makes its affixed being integral, and the centre is sample chamber (5);
Said groove (2) degree of depth is:
λ
LongBe that band than long-wave band leads to the wavelength of peak position, λ in two logical peak positions of band
ShortBe that band than short-wave band leads to the wavelength of peak position in two logical peak positions of band, wherein m, n are integer;
Said extraordinary micron bead viscose glue (4) is a macromolecule polymer material, and its diameter is got
Said unordered type film is that (3) are to be made of for 12 times the silicon film (301) of high index of refraction and silica coating (302) alternative stacked of low-refraction, and the thickness of each rete is the bed thickness of random fluctuation;
Said two logical peak positions of band: one of them is the characteristic absorption peak position of gas to be checked, and another is that near the non-uptake zone of the gas to be checked characteristic absorption peak position is as the reference peak position.
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| CN1215342C true CN1215342C (en) | 2005-08-17 |
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| CN103424329B (en) * | 2013-08-20 | 2016-02-03 | 中安高科检测科技（北京）有限公司 | A kind of preparation method detecting the gas sensor array of strong fragrant aromatic white spirit |
| CN103424328B (en) * | 2013-08-20 | 2016-02-03 | 中安高科检测科技（北京）有限公司 | A kind of preparation method detecting the gas sensor array of medicine aromatic white spirit |
| CN103543176A (en) * | 2013-10-16 | 2014-01-29 | 北京交通大学 | Preparation method of gas sensor array for detecting feng-flavor type white spirit |
| CN103543177A (en) * | 2013-10-16 | 2014-01-29 | 北京交通大学 | Preparation method of gas sensor array for detecting all-aroma type white spirit |
| CN111323861B (en) * | 2020-05-13 | 2021-12-03 | 翼捷安全设备（昆山）有限公司 | Infrared filter for acetylene gas detection, preparation method and application thereof |
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| CN1445530A (en) | 2003-10-01 |
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