CN1213867A - Magnetic component and magnetic head and magnetic memory of using this magnetic component - Google Patents
Magnetic component and magnetic head and magnetic memory of using this magnetic component Download PDFInfo
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- CN1213867A CN1213867A CN98114853A CN98114853A CN1213867A CN 1213867 A CN1213867 A CN 1213867A CN 98114853 A CN98114853 A CN 98114853A CN 98114853 A CN98114853 A CN 98114853A CN 1213867 A CN1213867 A CN 1213867A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/3227—Exchange coupling via one or more magnetisable ultrathin or granular films
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/561—Multilevel memory cell aspects
- G11C2211/5615—Multilevel magnetic memory cell using non-magnetic non-conducting interlayer, e.g. MTJ
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/90—Magnetic feature
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/11—Magnetic recording head
- Y10T428/1107—Magnetoresistive
- Y10T428/1114—Magnetoresistive having tunnel junction effect
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12014—All metal or with adjacent metals having metal particles
- Y10T428/12028—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, etc.]
- Y10T428/12063—Nonparticulate metal component
- Y10T428/12104—Particles discontinuous
- Y10T428/12111—Separated by nonmetal matrix or binder [e.g., welding electrode, etc.]
Abstract
A magnetic element comprises a granular magnetic film which has ferromagnetic fine particles dispersed in a dielectric matrix and does not display superparamagnetism and further possesses a finite coercive force, and a ferromagnetic film. A granular magnetic film and a ferromagnetic film are stacked or arrayed along one surface of a substrate and constitutes a ferromagnetic tunnel junction film. In the ferromagnetic tunnel junction film, the granular magnetic film functions as a barrier. Of the granular magnetic film and the ferromagnetic film, by varying spin direction of one ferromagnetic film through an external magnetic field, a giant magnetoresistance effect is manifested. Such a magnetic element is characterized in that magnetoresistance change rate is large, saturation magnetic field is small, resistance of the element can be controlled to an appropriate value, performance is small in its variation and stable.
Description
The present invention relates to utilize the magnetic element of tunnel current, and the magnetic head and the magnetic memory that use this magnetic element.
Magneto-resistance effect is meant the phenomenon that can change when its resistance when some kind magnetic applies magnetic field.Utilize the magneto-resistive effect element (MR element) of magneto-resistance effect to be used in magnetic head, Magnetic Sensor or the like.And the somebody proposed the patent application of the magneto-resistance effect holder of relevant use MR element.The aspect that this MR element requires further improvement comprises, increases the sensitivity with respect to the external magnetic field, improves answer speed or the like.
Use that the MR element of ferromagnetism body has that temperature stability is good, big or the like the characteristics of serviceability temperature scope.Can use the ferromagnetism alloy firm that constitutes by NiFe alloy or the like to make the MR element of this use ferromagnetism body.If this MR element is used in the reproduce head of hard disk or the like, can realize highdensity magnetic recording.It is quite little that yet this MR element that adopts NiFe alloy firm structure also has a magnetoresistive ratio (MR rate of change), only is about 2～3%, so be difficult to obtain to realize the problem of the needed enough sensitivity of high density recording.
On the other hand, with the artificial crystal film that ferromagnetic layer whose and non-magnetic metal layer are made by several millimicrons cycle alternative stacked,, day by day noticeable in recent years owing to have giant magnetoresistance effect as a kind of new material that shows magneto-resistance effect.Such as Fe/Cr artificial crystal film is (referring to Phys.Rev.Lett.61,2472 (1988)) and Co/Cu artificial crystal film (referring to J.Mag.Mag.Mater.94, L1 (1991), Phys.Rev.Lett.66,2156 (1991)) or the like, they all are by nonmagnetic layer, make the magnetic moment of relative ferromagnetic layer whose be antiparallel state magnetic in conjunction with and obtain to have the material of magneto-resistance effect.
These above-mentioned artificial crystal films have the magnetoresistive ratio than the big dozens of percentage of original permalloy film.This giant magnetoresistance effect (GMR) is owing to the at random of electronics that depends on ferromagnetic layer whose spin direction orientation causes.The problem of a plurality of laminations yet existing the bigger magneto-resistance effect of promising acquisition, the artificial crystal film must be set, also have saturation magnetic field (making the saturated magnetic field of resistance value) more than number tesla (T), make it be difficult to the intact problem that is applied in magnetic head or the like.
In order to reduce saturation magnetic field, developed the Spin Valve of the stack membrane of sandwich form at present with ferromagnetic layer whose/nonmagnetic layer/ferromagnetic layer whose.By Spin Valve be by make a ferromagnetic layer whose by exchange biased with fixed magnetization, and make externally magnetization inversion under the effect in magnetic field of another ferromagnetic layer whose, thereby mode that the relative angle that makes the direction of magnetization of two ferromagnetic layer whose changes obtains magneto-resistance effect.Yet the MR rate of change of Spin Valve is big not enough, and the resistance of stack membrane only is tens of micro-ohms centimetre, so the also promising problem that can detect the external magnetic field and bigger electric current is flow through.
Known at present, if electric current is flowed along the direction vertical with face, promptly utilize its vertical magneto-resistance effect with respect to magnetoresistance effect, can obtain very large magneto-resistance effect (referring to Phys.Rev.Lett.66,3060 (1991)).Yet for this occasion, the current delivery amount is smaller, and each layer be made of metal, and the resistance electricity is smaller, is difficult to carry out the following retrofit of sub-micron so have, and the problem that is difficult at room temperature measure magneto-resistance effect.
At present also known have a kind of and above-mentioned multilayer film to construct different constituted modes, it is according to make the conduct the relation that the magnetic ultramicron disperses, so-called particulate magnetic film also depends on spin in nonmagnetic metal matrix, obtain giant magnetoresistance effect (referring to Phys.Rev.Lett.68,3745 (1992).The particulate magnetic film be not applied with under the state in magnetic field, and the spin of each magnetic ultramicron is pointed to irregular direction separately and made resistance higher, can make each spin consistent with magnetic direction and make resistance reduction when being applied with magnetic field.Therefore can obtain magneto-resistance effect according to spin whether at random.The particulate magnetic film is than the easier making of artificial crystal film, so promise to be magneto-resistive effect element of future generation.Yet original particulate magnetic film is because the magnetic ultramicron demonstrates extraordinary magnetic, so have the saturation magnetic field very large problem that in fact will become.
Different with the mechanism of above-mentioned spin relation at random, can also obtain giant magnetoresistance effect according to the ferromagnetism tunnel effect.It is made of three layer laminate bodies with ferromagnetic layer whose/insulating barrier/ferromagnetic layer whose, and makes the coercive force of a ferromagnetic layer whose littler than the coercive force of another ferromagnetic layer whose, thereby can produce tunnel current when being applied with voltage between two ferromagnetic layer whose.At this moment, if only make the spin flip conversion of the smaller ferromagnetic layer whose of coercive force, because when the spin of two ferromagnetic layer whose is parallel to each other and during antiparallel, tunnel current has bigger difference, thereby obtains giant magnetoresistance effect.
This ferromagnetism tunnel binding member is characterised in that its simple structure, and at room temperature can obtain big most about 20% magnetoresistive ratio.Yet in order to obtain tunnel effect, the thickness that must make insulating barrier is below several millimicrons.Bao insulating barrier is had any problem aspect even, stable manufacture process like this, so have the bigger problem of the deviation ratio of magnetoresistive ratio.Also have when the resistance ratio of insulating barrier is higher, be difficult to make element to realize high speed motion when using it for storage unit, and noise is increased, S/N is than the problem of following degradation.But also have when increasing the current value of the ferromagnetism tunnel binding member of flowing through the problem that magnetoresistive ratio will reduce significantly (referring to Phys.Rev.Lett.74,3273 (1995)) in order to obtain needed output voltage values.
As mentioned above, the particulate magnetic film that is dispersed with the magnetic ultramicron in matrix has than the easier making of artificial crystal film, and magnetoresistive ratio at room temperature can reach the characteristic of higher value about 10% or the like.And the particle diameter of ultramicron can form little single magnetic field less than tens of dusts when following, and this can make the magnetic hysteresis of magneto-resistor curve littler.Therefore when using, be expected to reduce the good gloomy noise of its Bark as the MR element.Yet original ultra micron is owing to show extraordinary magnetic, and this will make saturation magnetic field in fact become very big, thereby how to have the problem with its practicability.
On the other hand, promptly have and at room temperature can obtain smaller or the like the characteristic of magnetoresistive ratio big about 20%, saturation magnetic field at ferromagnetism tunnel binding member, on the contrary, it also has because of the caused problem that is difficult to produce the element with stability characteristic (quality) of the thickness of insulating barrier.But also have when the current value that makes the ferromagnetism tunnel binding member of flowing through in order to obtain needed output voltage values increases the problem that the MR rate of change will reduce significantly.
Therefore, purpose of the present invention is exactly that the magnetic element that a kind of magnetoresistive ratio is big, saturation magnetic field is little, component resistance can be adjusted to suitable value and can obtain the smaller stability characteristic (quality) of discrete discrepancy will be provided.Even and the present invention also provides a kind of electric current (or voltage) of the element of flowing through that makes in order to obtain needed output voltage values (or current value) to increase the also smaller magnetic element that magnetoresistive ratio reduces.Another object of the present invention is that a kind of magnetic head and magnetic memory that further improves its characteristic and reliability by adopting this magnetic element will be provided.
A kind of magnetic element of the present invention be characterised in that it include have electric induction body matrix and be dispersed in ferromagnetism particulate in the described electric induction body matrix and have a coercitive particulate magnetic film; And and described particulate magnetic film in abutting connection with configuration, at the ferromagnetism film that can flow through tunnel current between itself and the particulate magnetic film.
Magnetic element of the present invention can obtain magneto-resistance effect by changing such as the spin direction that makes the smaller magnetic film of a coercive force in particulate magnetic film and the ferromagnetism film.In magnetic element of the present invention, the ferromagnetism film can be made of the ferromagnetism body that nonmagnetic material separates.
If for instance, the concrete configuration structure of particulate magnetic film of the present invention and ferromagnetism film can be to make particulate magnetic film and ferromagnetism film be the structure of stacked arrangement, also can be to make particulate magnetic film and ferromagnetism film be the structure that disposes side by side along substrate surface.And the particulate magnetic film can be substantial with the ferromagnetism film and contact configuration, but also can also clamp its thickness makes that tunnel current can flow through between particulate magnetic film and ferromagnetism film dielectric film except the particulate magnetic film.
Another kind of magnetic element of the present invention is characterised in that and includes the insulating barrier that its thickness can make tunnel current flow through; The first ferromagnetism film and the second ferromagnetism film that the mode of aforementioned dielectric layer disposes with clamping; And in the described first and second ferromagnetism films at least one separated by nonmagnetic material.
A kind of magnetic head of the present invention is characterised in that and includes aforesaid magnetic element of the present invention; And by tunnel current is flowed through electrode that the mode supplying electric current of described magnetic element uses.A kind of magnetic memory of the present invention is characterised in that and includes aforesaid magnetic element of the present invention; Apply the recording electrode that current field is used to described magnetic element; And make that tunnel current flows through described magnetic element supply with the regeneration electrode that sense current is used suchly.
Magnetic element of the present invention is had a giant magnetoresistance effect under downfield principle describes below.
Figure 1A, Figure 1B, Fig. 2 A and Fig. 2 B be the essential structure of magnetic element of the present invention use schematically illustrate figure.Just as shown in FIG., ferromagnetism film F and particulate magnetic film G constitute the ferromagnetism tunnel junction.Arrow among the figure is represented the direction of magnetization.Here, the particulate magnetic film G in the magnetic element of the present invention has the ferromagnetism particulate that is dispersed in the electric induction body matrix.Particulate magnetic film G is for having limited coercitive ferromagnetism body, and do not show extraordinary magnetic.
Under perfect condition, the spin of ferromagnetism particulate can all be suppressed and point to a direction shown in Figure 1A, Figure 1B, Fig. 2 A and Fig. 2 B.The direction of spin can be the state shown in Figure 1A and Figure 1B, also can be the state shown in Fig. 2 A and Fig. 2 B.And the ferromagnetism particulate preferably is layered arrangement.
In this structure, when between ferromagnetism film F and the particulate magnetic film G when being applied with voltage such as electrode or the like, conduction electron among the ferromagnetism film F will conduct between the ferromagnetism particulate of particulate magnetic film G owing to tunnel effect, thereby tunnel current is flowed.At this moment spin orientation generally is being held.Below the situation when the outside applies magnetic field is in this state described.
In initial condition, shown in Figure 1A and Fig. 2 A, identical direction is pointed in the spin of two magnetic film F, G.At this moment can keep the spin among ferromagnetism film F and the particulate magnetic film G and carry out the tunnel conduction in the same old way.Therefore as shown in Figure 3A, along the electronics in the bigger spin energy band of various state densities (as among Fig. 3 A ↓ shown in spinning electron) direction have bigger conduction, electronics becomes the tunnel easily.Be that resistance ratio is less.
Subsequently shown in Figure 1B and Fig. 2 B,, apply the external magnetic field by only making the compare size of spin (in Figure 1B and Fig. 2 B, be the spin among the ferromagnetism film F, below identical) counter-rotating of less magnetic film of coercive force among two magnetic film F, the G.At this moment shown in Fig. 3 B, the spin energy band among each magnetic film F, G is in the smaller spin energy band of state density, so electronics is compared with the occasion shown in Fig. 3 A, the tunnel gets clogged.Therefore resistance ratio is bigger.
Like this, by only making the externally the action of a magnetic field counter-rotating down of spin in the smaller magnetic film of coercive force, just can obtain giant magnetoresistance effect.If at this moment in ferromagnetism film F, select the smaller soft-magnetic body of coercive force, can also reduce saturation magnetic field.Therefore adopt the magneto-resistance effect type element of magnetic element of the present invention can obtain high sensitivity.
Particulate magnetic film of the present invention does not show extraordinary magnetic, but a ferromagnetism body, so the big problem in saturated magnetic field in original particulate GMR material can not occur.Particulate magnetic film of the present invention is to be dispersed with the ferromagnetism particulate in electric induction body matrix, so compare with the ferromagnetism tunnel junction with insulating barrier, its resistance ratio is less.And the mode of volume filling rate of the current delivery direction by control particulate magnetic film (film thickness direction or claim side direction in the face) length or ferromagnetism particulate, size, dispersity or the like, resistance can be controlled to be suitable value.Therefore magnetic element of the present invention can be adjusted resistance according to the needs of using.
And for the ferromagnetism tunnel junction element, in the occasion that increases the electric current (or voltage) of the element of flowing through for the needed output voltage values of acquisition (or current value), spin wave by making the long wavelength (conducts the material of the state of the spin tendency in each lattice-site: magnon) in the ferromagnetism film and the mode of conducting between the ferromagnetism film, can reduce magnetoresistive ratio with the form of ripple.By making the mode of being separated by nonmagnetic material, can block the propagation of magnon here, with the close ferromagnetism film that is provided with of particulate magnetic film.Even therefore the occasion that increases in the induced electricity flow valuve also can suppress the reduction of magnetoresistive ratio, thereby can obtain bigger output voltage.
The ferromagnetism film that is separated by nonmagnetic material also is effective for the ferromagnetism tunnel junction element of routine.Other magnetic element of the present invention also can be the element that at least one the ferromagnetism film in the ferromagnetism tunnel junction element of the stack membrane with ferromagnetism film/insulating barrier/ferromagnetism membrane structure is separated by nonmagnetic material.
Magnetic element of the present invention can be applied to magneto-resistance effect type magnetic head, Magnetic Sensor, magnetic memory or the like.In this occasion, preferably also in face, has magnetic anisotropy for magnetic memory especially.
Figure 1A and Figure 1B are the schematic diagram of the essential structure of expression magnetic element of the present invention.
Fig. 2 A and Fig. 2 B are another schematic diagram of the essential structure of expression magnetic element of the present invention.
Fig. 3 A and Fig. 3 B are the schematic diagram of the magneto-resistance effect that had of explanation magnetic element of the present invention.
Fig. 4 is applicable to the schematic cross sectional view of major part structure of first form of implementation of lamination-type magnetic element of the present invention for expression.
Fig. 5 is applicable to the schematic cross sectional view of major part structure of second form of implementation of lamination-type magnetic element of the present invention for expression.
Fig. 6 is the schematic cross sectional view of the structure of the example of expression when lamination-type magnetic element of the present invention applies bias magnetic field.
Fig. 7 is the schematic cross sectional view of the structure of another example of expression when lamination-type magnetic element of the present invention applies bias magnetic field.
Fig. 8 is the schematic cross sectional view of a variant embodiment of the ferromagnetism film in the expression magnetic element of the present invention.
Fig. 9 is the schematic cross sectional view of a variant embodiment of expression magnetic element shown in Figure 8.
Figure 10 be applicable to for expression lamination-type magnetic element of the present invention the 3rd form of implementation the major part structure schematically illustrate figure.
Figure 11 be applicable to for expression lamination-type magnetic element of the present invention the 4th form of implementation the major part structure schematically illustrate figure.
Figure 12 schematically illustrates figure for the structure of a concrete element of expression lamination-type magnetic element of the present invention.
Figure 13 is the profile of expression lamination-type magnetic element shown in Figure 12.
Figure 14 is applicable to the schematic cross sectional view of major part structure of the 5th form of implementation of lamination-type magnetic element of the present invention for expression.
Figure 15 is the schematic cross sectional view of the major part structure of a variant embodiment of expression lamination-type magnetic element shown in Figure 14.
Figure 16 is applicable to the schematic cross sectional view of major part structure of first form of implementation of plane magnetic element of the present invention for expression.
Figure 17 is the schematic cross sectional view of the major part structure of a variant embodiment of expression plane magnetic element as shown in figure 16.
The schematic cross sectional view of Figure 18 major part structure of second form of implementation of plane magnetic victory element of the present invention for expression is applicable to.
Figure 19 is the schematic cross sectional view of the major part structure of expression another kind of magnetic element of the present invention.
Figure 20 is illustrated in the schematic cross sectional view that applies the state of antiferromagnetism film on the magnetic element shown in Figure 19.
Figure 21 is the schematic cross sectional view of the major part structure of a variant embodiment of expression magnetic element as shown in figure 19.
Figure 22 is the schematic diagram of the measurement result of the magnetic element magnetization curve of the expression first embodiment of the present invention.
Figure 23 is the schematic diagram of the measurement result of the magnetic element magneto-resistance effect of the expression first embodiment of the present invention.
Figure 24 is the schematic diagram of expression as the measurement result of the magnetic element magnetization curve of a comparative example.
Figure 25 is for the tunnel magneto resistance rate of change of the magnetic element of the expression fourth embodiment of the present invention and apply the schematic diagram of the measurement result that concerns between the voltage.
Figure 26 is for the tunnel magneto resistance rate of change of the magnetic element of the expression fifth embodiment of the present invention and apply the schematic diagram of the measurement result that concerns between the voltage.
Figure 27 is for the tunnel magneto resistance rate of change of the magnetic element of the expression sixth embodiment of the present invention and apply the schematic diagram of the measurement result that concerns between the voltage.
Figure 28 is for the tunnel magneto resistance rate of change of the magnetic element of the expression seventh embodiment of the present invention and apply the schematic diagram of the measurement result that concerns between the voltage.
Figure 29 is for the tunnel magneto resistance rate of change of the magnetic element of the expression eighth embodiment of the present invention and apply the schematic diagram of the measurement result that concerns between the voltage.
Below with reference to description of drawings most preferred embodiment of the present invention.
Fig. 4 schematically illustrates figure for the major part structure of first form of implementation of expression magnetic element of the present invention.Shown in Figure 4, magnetic element 1 has the particulate magnetic film 3 that is formed on the substrate 2 and lamination and is formed on ferromagnetism film 4 on this particulate magnetic film 3.The stack membrane 5 that is formed by this particulate magnetic film 3 and ferromagnetism film 4 is constituting the ferromagnetism tunnel junction.Yet the particulate magnetic film 3 in the stack membrane 5 and the laminated layer sequence of ferromagnetism film 4 are not limited in this.
Fig. 5 schematically illustrates figure for the major part structure of second form of implementation of expression magnetic element of the present invention.As shown in Figure 5, magnetic element 1 be configured to particulate magnetic film 3 by two- layer ferromagnetism film 4a, 4b clamping.In other words be exactly the first ferromagnetism film 4a and the second ferromagnetism film 4b particulate magnetic film 3 with clamping relative configuration of mode.The stack membrane 5 of this three-decker also constitutes a kind of ferromagnetism tunnel junction.
Here, lamination-type magnetic element 1 can have by layer of particles magnetic film 3 at least and the stack membrane 5 that constitutes of one deck ferromagnetism film 4 laminations at least.Lamination-type magnetic element 1 also can adopt stack membrane stacked by particulate magnetic film 3 and ferromagnetism film 4 multilayers and that form.And between particulate magnetic film 3 and ferromagnetism film 4, can also clamp the dielectric film of its thickness, and can utilize this dielectric film to control its resistance for tunnel current is flow through.
Particulate magnetic film 3 has the structure that is dispersed with ferromagnetism particulate 7 in electric induction body matrix 6.This particulate magnetic film 3 does not demonstrate extraordinary magnetic, but has limited coercitive ferromagnetism body.Ferromagnetism particulate 7 in particulate magnetic film 3 is in order to flow through tunnel current between these particulates, and must be dispersed among the electric induction body matrix 6.Therefore the particulate of ferromagnetism particulate 7 is preferably under 3 millimicrons at interval.And the particle diameter of ferromagnetism particulate 7 be necessary for be unlikely to occur extraordinary magnetic and can maintain ferromagnetic size, such as can be more than several millimicrons.For the size and the particulate interval that can further increase ferromagnetism particulate 7, the particle diameter of ferromagnetism particulate 7 preferably is taken as 5～10 millimicrons.
Ferromagnetism particulate 7 is preferably in and is the stratiform configuration in the electric induction body matrix 6.By ferromagnetism particulate 7 being configured to the mode of stratiform, can making the tunnel current that flows through between particulate magnetic film 3 and the ferromagnetism film 4 more even, and can improve the reproducibility of the resistance variations that produces by magneto-resistance effect.
Can adopt various strong magnetic materials to make ferromagnetism particulate 7.Ferromagnetism particulate 7 is dispersed in the particulate magnetic material in the electric induction body matrix 6, because it will be littler than the coercive force of integral material, so in order to be very difficult for this to happen, preferably adopt the big material of magnetic anisotropy as ferromagnetism particulate 7, this class material comprises Co, Co-Pt alloy, Fe-Pt alloy, migration metal-rare earth alloy or the like.For with particulate magnetic film 3 as the fixing occasion of film of magnetization, it is specially suitable adopting these strong magnetic materials.
For the occasion of particulate magnetic film 3 as the soft ferromagnetic layer use, the constituent material of ferromagnetism particulate 7 usefulness is not particularly limited, can also adopt Fe, Co, Ni and include the alloy of these metals, (wherein R is a rare earth metal for the magnesium oxide that spin polarizability is bigger, CrO2, RXMnO3-y, X is by a kind of element of selecting among Ca, Ba and the Sr, y approaches 0 value) or the like oxide-based magnetic element, and the Huo Yisile alloy of NiMnSb, PtMnSb or the like or the like material.
For adopting coercive force is not the occasion of very big particulate magnetic material, can also be as shown in Figure 6, two end abutment at particulate magnetic film 3 dispose a pair of hard magnetic film 8, and by apply the spin that fixes of bias magnetic field to particulate magnetic film 3 by this hard magnetic film 8.And in Fig. 6,9 is insulating barrier.
In the film 4,4 among Fig. 6 at least one also can be the ferromagnetism film.For only there being one to be the occasion of ferromagnetism film, its another can be the electrode that constitutes by Cr or the like nonmagnetic metal.Bias magnetic field applies film and is not limited in employing hard magnetic film 8, such as can also adopt the antiferromagnetism film 10 that forms with particulate magnetic film 3 laminations as shown in Figure 7.Antiferromagnetism film 10 can adopt such as the antiferromagnetism alloy of FeMn, IrMn, PtMn, NiMn or the like with such as the antiferromagnetism material of NiO, Fe2O3 or the like.But also can adopt antiferromagnetism exchange film to apply film as bias magnetic field such as Co/Ru/Co, Co/Au/Co or the like.
Disperse the particulate magnetic material of RXMnO3-y particle to have littler coercive force, and have 100% spin polarizability.Therefore when adopting the RXMnO3-y magnetic element to use as ferromagnetism particulate 7, the dependence of the spin of tunnel current is quite big, so can obtain sizable magneto-resistance effect.For the occasion that adopts this particulate magnetic material, above-mentioned bias structure also is quite effective.And in the occasion that only makes ferromagnetism film 4 spin flip conversions, aspect the spin of forcing fixing particulate magnetic film 3, constituting bias magnetic field by hard magnetic film 8 and antiferromagnetism film 10, to apply film be effective.
Can adopt various electric induction section bar material such as Al2O3, SiO2, MgO, MgF2, B2O3, AlN, CaF2, SrTiO3 or the like as electric induction body matrix 6.By in this electric induction body film, being dispersed with the mode of aforesaid ferromagnetism particulate 7, just can obtain not demonstrate the particulate magnetic film 3 of extraordinary magnetic.And in above-mentioned oxide-film, nitride film, fluorinated film etc., generally there be the damaged of element separately, so even use this electric induction body film also any problem can not occur.
On the other hand, ferromagnetism film 4 from its purpose also with particulate magnetic film 3 between coercitive size relevant.Ferromagnetism film 4 can adopt various magnetic materials, such as can adopt with the permalloy is the Fe-Ni alloy of representative, demonstrate ferromagnetic Fe, Co, Ni and include the alloy of these metals, such as the metalloid in the Huo Yisile alloy of NiMnSb, PtMnSb or the like, oxide-based metalloid such as CrO2, magnesium oxide, (La, Sr) MnO3 or the like, and the soft magnetic material of non-crystaline amorphous metal or the like, until retentive material such as Co-Pt alloy, Fe-Pt alloy, migration metal-rare earth alloy or the like.Metalloid has energy gap on the spin energy band of a direction, so only to having the electron production conduction of a direction spin.Therefore adopt this material ferromagnetism film 4, can obtain bigger magneto-resistance effect.
As shown in Figure 5, when adopting two-layer above ferromagnetism film 4a, 4b, they are not to adopt the identical materials formation, but also can have the coercive force different with particulate magnetic film 3 respectively.For the different occasion of coercive force of two- layer ferromagnetism film 4a, 4b, can also be with it as using such as many-valued holder or the like.
The stack membrane that makes ferromagnetic layer whose and semiconductor layer alternative stacked and constitute can also be used as ferromagnetism film 4.For this occasion, its characteristics are to utilize the light and heat irradiation and make the enforcement spin flip conversion, so no longer need to apply magnetic field.If for instance, can be FeSi alloy with B20 structure or the like as the semiconductor that is used to do this stack membrane.And the stack membrane that is made of ferromagnetic layer whose and nonmagnetic layer alternative stacked, and the stack membrane that is made of ferromagnetic layer whose and semiconductor layer alternative stacked can also be used as by one in two ferromagnetism films 4 of particulate magnetic film 3 configurations as shown in Figure 9.
Aforesaid particulate magnetic film 3 and ferromagnetism film 4 preferably also have the magnetic anisotropy of single shaft in its face.If adopt this form of the composition, not only can produce rapid magnetization inversion, but also can maintain the stable of magnetized state simultaneously.This is effective especially for the occasion that is applied to magnetic memory.The thickness of particulate magnetic film 3 and ferromagnetism film 4 is preferably in 0.5～100 millimicron the scope.Wherein the thickness of particulate magnetic film 3 should be thin as much as possible, but should keep uniform film thickness on making, as long as thickness does not produce harmful effect to tunnel current.It is then better when the thickness of particulate magnetic film 3 is taken as below 50 millimicrons.
The magnetic element 1 that is made of above-mentioned each layer is typical film like, and can generate the conventional film forming method making of (MBE) method, various sputtering method, vapour deposition method or the like with molecular beam epitaxy.Particulate magnetic film 3 can with the strong magnetic material that the electric induction body material that constitutes electric induction body matrix 6 and ferromagnetism particulate 7 are formed simultaneously film forming (such as, sputter simultaneously) mode is made, and also can make of the mode that makes electric induction body material and strong magnetic material replace film forming.In the process that replaces film forming, strong magnetic material is because to the deterioration of electric induction body material soakage, so make its granulating by the accumulating amount of control strong magnetic material.If adopt this film build method, just can make ferromagnetism particulate 7 be uniform stratiform setting.And in magnetic element of the present invention, can also be provided with the substrate layer that constitutes by magnetic material or nonmagnetic substance at stack membrane 5 places, or the extensive coating that constitutes by nonmagnetic substance or the like.
In above-mentioned magnetic element 1, by making the smaller magnetic film of coercive force in particulate magnetic film 3 and the ferromagnetism film 4, such as the spin direction of ferromagnetism film 4 just can obtain magneto-resistance effect as described above with the mode that the variation of external magnetic field changes.In other words be exactly, be in the state of equidirectional in the spin direction of particulate magnetic film 3 and ferromagnetism film 4, the resistance of stack membrane 5 is minimum.Make a smaller magnetic film of coercive force by this state, such as only make the externally effect counter-rotating down in magnetic field of spin direction of ferromagnetism film 4, the resistance that just can make stack membrane 5 is for maximum.At this moment, another magnetic film, such as the spin in the particulate magnetic film 3 can remain unchanged basically for the external magnetic field that makes ferromagnetism film 4 spin flip conversions.
The mode of the spin flip conversion by making a magnetic film in this stack membrane 5 that is formed by particulate magnetic film 3 and ferromagnetism film 4 can obtain the MR rate of change and be the huge magneto-resistance effect more than 20%.Externally the magnetic film of spin flip conversion can be any smaller magnetic film of coercive force in particulate magnetic film 3 and the ferromagnetism film 4 under the action of a magnetic field, and is not particularly limited in ferromagnetism film 4.Make the magnetic film of spin direction counter-rotating also can be particulate magnetic film 3.But, the also spin direction counter-rotating that can coercive force be regulated be easy to ferromagnetism film 4 by external magnetic field etc.
The measuring ability of this external magnetic field and original MR element are similar, promptly can be used in magneto-resistance effect type magnetic head and Magnetic Sensor or the like.And by making a smaller magnetic film of coercive force in particulate magnetic film 3 and the ferromagnetism film 4 as recording layer, make another as the spin fixed bed simultaneously, judge with same induced current and the mode of the direction of magnetization of recording layer can read in the data that write on the recording layer.Therefore it can also be utilized as magnetic memory.
In this magnetic element 1, the ferromagnetism body of particulate magnetic film 3 for not having extraordinary magnetic is so solved the bigger problem of saturation magnetic field that exists in original particulate GMR material.And if in ferromagnetism film 4, select the little soft-magnetic body of coercive force, owing to can further reduce its saturation magnetic field, thus can make the high sensitization of the magnetic element that utilizes magneto-resistance effect.
Particulate magnetic film 3 is dispersed with ferromagnetism particulate 7 in electric induction body matrix 6, so compare with the original ferromagnetism tunnel junction with insulating barrier, its electrical resistance is littler.The length of the current delivery direction (film thickness direction) by control particulate magnetic film 3 or the volume filling rate of ferromagnetism particulate 7, size, dispersity or the like can be controlled to be resistance suitable value.By adopting this mode, the occasion in that for example memory element or the like uses can improve the high speed motion performance of element further, and increase its S/N ratio.
Ferromagnetism tunnel junction (stack membrane 5) with magneto-resistance effect, with particulate magnetic film 3 as tunneling barrier, tunnel current in this stack membrane 5 is having ferromagnetism particulate 7 in the limited coercitive particulate magnetic film 3, so that particulate magnetic film 3 no longer needs to resemble the insulating barrier in original ferromagnetism tunnel junction is thin.In other words be exactly that the thickness of particulate magnetic film 3 can keep the thickness of uniform state when making, so can reduce deviation, make the reproducibility of stability characteristic (quality) better.
Figure 10 and Figure 11 are the illustrative diagram of the major part structure of third and fourth form of implementation of expression magnetic element of the present invention.In the magnetic element shown in these figure 14, ferromagnetism film 4 (4a, 4b) is separated by nonmagnetic material 15 along the face direction.In addition other constitutes, and be all identical with Fig. 4 and magnetic element 1 shown in Figure 5.
Separately the nonmagnetic material 15 of ferromagnetism film 4 usefulness can adopt and magnetic (magnetic particle) more weak various nonmagnetic materials of exchange interaction each other, these materials can be the nonmagnetic elements monomer of Ag, Cu, Au, Ta, B, C, Pd, Pt, Zr, Ir, W, Mo, Nb or the like, or nonmagnetic alloy, non-magnetic compound, nonmagnetic oxide or the like.Similarly, the thickness of nonmagnetic material 15 can be the more weak thickness of mutual exchanging action that makes between the magnetic particle, such as can be about 1 millimicron.
So just, can adopt with ferromagnetism film 4 in magnetic particle each other the more weak mode of exchange interaction dispose nonmagnetic material 15.Be exactly that the such ground so that the spin wave (magnon) that prevents longer wavelength transmits in ferromagnetism film 4 is configured in nonmagnetic material 15 in the ferromagnetism film 4 more specifically.Figure 11 shows two ferromagnetism film 4a among Fig. 1 and Fig. 2,4b both sides all by 15 minutes structure of nonmagnetic material, but also can adopt the structure that only has a ferromagnetism film to be separated by nonmagnetic material.
Here, the energy that encourages the low energy magnon to use can be by following formulate.
E=2J(2π/N)2 …(1)
N is the atomicity in the unit volume, and J is the magnetic positive energy exchange, and is proportional with Curie point.Therefore when when magnon applies ENERGY E, for will not being energized than the littler particle magnon of determining by formula (1) of N.
For example, when the E=0.01 electron-volt, can have by formula (1)
N-2=(2J/0.01)(2π)-2 …(2)
If J=1500K, is then become by formula (2) by 1 electron-volt=104K
N=16.8
When lattice constant was the a=0.25 millimicron, the lattice size was
Na=16.8×0.25nm=4.2nm
That is, at the particle below 4.2 millimicrons, can not encourage magnon with the following energy of E=0.01 electron-volt for diameter.
By above-mentioned explanation as can be known, by ferromagnetism film 4 being split up into and can just can blocking the propagation of magnon in ferromagnetism film 4 by the mode of certain size below the particle of the energy of magnon guiding with nonmagnetic material 15.Yet, when by nonmagnetic material 15 particle after separately big or small too small, be difficult to keep spin again.Therefore, ferromagnetism mould 4 can be in the scope that keeps its spin, and the mode can prevent more effectively that magnon from transmitting is separated into it as much as possible little.
In other words mode with nonmagnetic material 15 separates ferromagnetism film 4, as the mode of configuration nonmagnetic material 15 in ferromagnetism film 4, for example adopts the mode of the non-metallic layer (for example non-magnetic metal layer) of the substrate that is provided as ferromagnetism film 4.This non magnetic substrate is not shown in Figure 10 and Figure 11.By this stack membrane is implemented heat treated mode, can make the crystalizing interface configuration of nonmagnetic material 15 along ferromagnetism film 4.In other words be exactly, separately according to the mutually big or small available nonmagnetic material 15 of its crystalline solid.For this occasion,, just can ferromagnetism film 4 be separated into magnetic-particle with nonmagnetic material 15 with needed size by controlling the mode of the size of the crystalline particle that constitutes ferromagnetism film 4 in advance.
In the magnetic element 14 of this form of implementation, separate ferromagnetism film 4 with nonmagnetic material 15, so can prevent the propagation of magnon.Therefore in order to obtain needed output voltage values,, also can suppress the reduction of magnetoresistive ratio even the current value of flowing through as the magnetic element 14 of ferromagnetism tunnel junction increases.By adopting this mode, the output voltage that acquisition that can be good is bigger.And the mode by separating ferromagnetism film 4 with nonmagnetic material 15, can also make ferromagnetism film 4 further soft magnetismizations.Therefore can further make magnetic element 14 high sensitivityization as the MR element.
Below with way of example,, illustrate that the element of the lamination-type magnetic element 1,14 of above-mentioned each form of implementation in represented specifically constitutes with reference to Figure 12 and structure shown in Figure 13.Promptly on the downside ferromagnetism film 4a that is formed on the substrate 2, the part that lid is covering this downside ferromagnetism film 4a lamination like that successively forms and its particulate magnetic film 3 and the upside ferromagnetism film 4b of quadrature mutually.At this moment can on substrate 2, not use downside ferromagnetism film 4a yet, but adopt the electrode that constitutes by nonmetallic materials such as Cr or the like.If necessary, can also on upside ferromagnetism film 4b, form the electrode that the good conductor by Cu, Au, Ag or the like constitutes.
In the magnetic element 1,14 with this structure, the lap of particulate magnetic film 3 and ferromagnetism film 4 (such as, its quadrature component) forms the ferromagnetism tunnel junction.By the mode that induced current is flow through along film thickness direction with respect to this part, just can utilize the magneto-resistance effect of the ferromagnetism tunnel junction that is comprising particulate magnetic film 3.
Figure 14 is the schematic cross sectional view of the major part structure of the 5th form of implementation of explanation magnetic element of the present invention.In magnetic element 16 as shown in figure 14, be on particulate magnetic film 3, to dispose two ferromagnetism film 4A, 4B that are separated each other side by side.Therefore for the lamination-type magnetic element, the lamination area of its particulate magnetic film and ferromagnetism film is not limited to one.Ferromagnetism film 4A, the 4B of this occasion also can separate along its face direction with nonmagnetic material 15 as shown in figure 15.
For Figure 14 and structure shown in Figure 15, the laminate portion of particulate magnetic film 3 and ferromagnetism film 4 forms two.In this structure, preferably also be provided with the lower substrate layer 17 of its resistance ratio particulate magnetic film 3 at the downside of particulate magnetic film 3.Utilize this low-resistance substrate layer 17, can suppress the tunnel current that flows along in the face of particulate magnetic film 3.
For having the magnetic element 16 that said structure constitutes, can utilize several laminate portion that constitutes by particulate magnetic film 3 and ferromagnetism film 4, so can further increase its resistance change rate.And having the occasion of low-resistance substrate layer 17 at magnetic element 16, the electric current that flows along the face direction will flow through substrate layer 17.Because this a part of resistance ratio is less, if the element area is also quite little, then it is compared and can ignore with the lateral resistance of particulate magnetic film 3, so can adjust increasing the various characteristics of resistance or the like under the condition of the minimum current delivery amount twice of crossing particulate magnetic film 3 for cross-current.
The following describes other form of implementation of magnetic element of the present invention.
Figure 16 is applicable to the schematic cross sectional view that makes electric current major part structure of first form of implementation of mobile planarized structure in magnetic element of the present invention along real estate for expression.In the plane magnetic element 21 as shown in figure 16, on substrate 2, dispose two ferromagnetism films 4,4 that particulate magnetic film 3 in particulate magnetic film 3 and clamping along real estate.
In other words be exactly to dispose with clamping along substrate surface and two ferromagnetism films 4,4 (the first and second ferromagnetism films) that the mode of particulate magnetic film 3 is oppositely arranged.The particulate magnetic film 3 that the edge is connected with the direction that substrate surface parallels and the joint portion (parallel alignment type joint portion) of ferromagnetism film 4 constitute the ferromagnetism tunnel junction.This ferromagnetism film 4 also can separate along the face direction with nonmagnetic material 15 as shown in figure 17.But also can not adopt some strong magnetic wherein to win film 4, but the nonmagnetic metal film that configuration is used as electrode.
Concrete structure of each layer in the plane magnetic element 21 and additional structure are all similar with aforesaid lamination-type magnetic element 1,14, apply film such as also can dispose bias magnetic field as required.And plane magnetic element 21 comprises this point that the induced current of the tunnel current between particulate magnetic film 3 and the ferromagnetism film 4 flows along substrate surface except making, all similar with aforesaid lamination-type magnetic element 1,14, promptly the mode that can change because of the effect of external magnetic field or the like by the spin direction that makes the smaller magnetic film (such as ferromagnetism film 4) of coercive force in particulate magnetic film 3 and the ferromagnetism film 4 can obtain giant magnetoresistance effect.
If adopt this plane magnetic element 21, can obtain the effect identical with described lamination-type magnetic element 1,14.Separating the occasion of ferromagnetism film 4 with nonmagnetic material 15,, even also can suppress reducing of MR rate of change in the current value increase owing to can prevent the propagation of magnon.And planar device adopts the retrofit fabrication techniques easily, so can obtain stable properties, can easily realize the densification of element simultaneously.
For example as shown in figure 18, this planar device also is applicable to end limit mating type component structure.In end limit mating type magnetic element 22 as shown in figure 18, lamination is provided with ferromagnetism film 4 and insulating barrier 23 successively on substrate 2, and makes the end face of this stack membrane become the inclined end face of inclination at a predetermined angle with respect to real estate.And then to cover the mode of the inclined end face of the stack membrane that is covering downside ferromagnetism film 4 and insulating barrier 23 at least, lamination forms particulate magnetic film 3 and upside ferromagnetism film 4 successively.In end limit mating type magnetic element 22, the particulate magnetic film 3 that is connecting along the direction parallel with real estate at rake and the joint portion of ferromagnetism film 4 constitute the ferromagnetism tunnel junction.And a ferromagnetism film 4 in the two-layer up and down ferromagnetism film 4,4 also can substitute with the nonmagnetic metal film.Even this end limit mating type magnetic element 22 also can obtain the effect identical with plane magnetic element 21.
Other form of implementation to magnetic element of the present invention describes below.
Figure 19 is the schematic cross sectional view of the major part structure of a form of implementation of expression another kind of magnetic element of the present invention.In magnetic element shown in Figure 19 31, on substrate 32, be formed with the first ferromagnetism film 33.On the first ferromagnetism film 33, also be formed with the second ferromagnetism film 35 by tunnel insulation layer 34.The thickness of tunnel insulation layer 34 makes tunnel current to flow through between the last the first magnetic victory film 33 and the second ferromagnetism film 35.The thickness of tunnel insulation layer 34 is preferably in below 30 millimicrons.The magnetic element (ferromagnetism tunnel binding member) 31 that utilizes these critical pieces just can constitute to have the ferromagnetism tunnel junction.
The first and second ferromagnetism films 33,35 can be with nonmagnetic material 36 along the face direction separately.The size that ferromagnetism film 33,35 is separated by nonmagnetic material 36, the material of nonmagnetic material 36 and thickness, nonmagnetic material 36 configuration mode in ferromagnetism film 33,35 or the like, all similar with aforesaid form of implementation.For the magnetic element in this form of implementation 31, the ferromagnetism mould 33,35 with nonmagnetic material 36 separates also can suppress the propagation of magnon.
Spin direction in the ferromagnetism film in the first and second ferromagnetism films 33,35 is changed under the effect such as external magnetic field or the like, so just can obtain huge magneto-resistance effect.When the spin in the first and second ferromagnetism films 33,35 was the state of equidirectional, the resistance of ferromagnetism tunnel binding member 31 (to the resistance of edge with the tunnel current of face vertical direction) was minimum.Spin direction by making a ferromagnetism film just can make the resistance of ferromagnetism tunnel binding member 31 become maximum by the externally effect counter-rotating down in magnetic field of this state.At this moment, the spin of another ferromagnetism film is maintained fixed basically with respect to this external magnetic field.
Can utilize such as the ferromagnetism body in the difference aspect the coercive force, the spin direction of a ferromagnetism film in the first and second ferromagnetism films 33,35 is changed.Or as shown in figure 20, by antiferromagnetism film 37 being set in Figure 20, and utilizing with the mode of the exchange of this antiferromagnetism film 37 magnetization is fixed at a ferromagnetism film (such as, be the second ferromagnetism film 35) superimposed layer.Can also adopt such as the antiferromagnetism exchange film of Co/Ru/Co, Co/Au/Co or the like and realize the magnetization of a ferromagnetism film is fixed.
To ferromagnetism film 33,35 concrete material does not have specific restriction, it can adopt various magnetic to win material, for example say that can adopt with the permalloy is the Fe-Ni alloy of representative, demonstrate ferromagnetic Fe, Co, Ni and the alloy that includes these metals, such as NiMnSb, the Huo Yisile alloy of PtMnSb or the like, such as CrO2, magnesium oxide, (La, Sr) the oxide-based magnetic material of MnO3 or the like, and the various soft magnetic materials of non-crystaline amorphous metal or the like, until such as the Co-Pt alloy, the Fe-Pt alloy, the retentive material of migration metal-rare earth alloy or the like.
This ferromagnetism tunnel binding member 31 is typical film like, and can generate the conventional film forming method making of (MBE) method, various sputtering method, vapour deposition method or the like with molecular beam epitaxy.Ferromagnetism of the present invention tunnel binding member 31 can also be provided with the substrate layer that is made of magnetic material or nonmagnetic substance, or the lid plating layer that constitutes by nonmagnetic substance or the like.
At the ferromagnetism tunnel of above-mentioned form of implementation binding member 31, separated ferromagnetism film 33,35 with nonmagnetic material 36, so can prevent the propagation of magnon.Thereby, owing to obtain needed output voltage values,, also can suppress the reduction of magnetoresistive ratio even the current value of the ferromagnetism tunnel binding member 31 of flowing through increases.By adopting this mode, can obtain bigger output voltage well.And by separating ferromagnetism film 33,35, ferromagnetism film 33,35 further soft magnetismizations with nonmagnetic material 36.Therefore can further improve sensitivity as the ferromagnetism tunnel binding member 31 of MR element.
With nonmagnetic material 36 separately the structure of ferromagnetism film 33,35 be not limited to as shown in figure 19 the sort of structure.For example, can also be as shown in figure 21, the structure that adopts ferromagnetic layer whose 35a and nonmagnetic layer 38 alternative stacked to be provided with.By under than higher air pressure, making ferromagnetic layer whose 35a and nonmagnetic layer 38 alternating sputtering film forming just can obtain the structure of separating ferromagnetic layer whose 35a by nonmagnetic layer 38.
But also can implement heat treated mode by ferromagnetism film 35 to sandwich construction, form and make the structure of nonmagnetic material 38a along the crystalizing interface configuration of each ferromagnetic layer whose 35a.The ferromagnetic layer whose 35 of this sandwich construction is to be separated by the film thickness direction along each ferromagnetic layer whose 35a nonmagnetic layer 38 that disposes and the nonmagnetic material 38a that is configured in the ferromagnetic layer whose 35a.Figure 21 only shows that a ferromagnetic layer whose 35 is the example of multi-ply construction, but also can adopt sandwich construction in two ferromagnetism films 33,35.
The ferromagnetism film that is separated by nonmagnetic material can use by nonmagnetic material and be separated into the Nanocrystalline materials that the magnetic particle about several millimicrons constitutes.And at the particulate magnetic film of aforesaid form of implementation because the structure of being separated magnetic particle by electric induction body matrix is arranged, so the ferromagnetism film that can use it to separate as nonmagnetic material by ferromagnetism tunnel binding member 31.
In showing the ferromagnetism tunnel binding member 31 of giant magnetoresistance effect, flowing through along stack direction has induced current, and flowing through between the first and second ferromagnetism films 33,35 has tunnel current.Comprise the faradic voltage of this tunnel current by mensuration, just can detect the external magnetic field in signal magnetic field or the like.The measuring ability of this external magnetic field and original MR element are similar, promptly can be used in magneto-resistance effect type magnetic head and Magnetic Sensor or the like.And by making a smaller magnetic film of coercive force in the first and second ferromagnetism films 33,35 as recording layer, make another as the spin fixed bed, and judge with same induced current and the mode of the direction of magnetization of recording layer can also read in the data that write on the recording layer.Therefore it can also be used as magnetic memory.
Use the magneto-resistance effect type magnetic head of the magnetic element 1,14,16,21,22,31 in above-mentioned each form of implementation, its structure constitutes can be similar with original magneto-resistance effect type magnetic head.Promptly can utilize a smaller magnetic film of coercive force in particulate magnetic film 3 and ferromagnetism film 4 or the first ferromagnetism film 33 and the second ferromagnetism film 35 as the magnetic induction layer, and the direction of magnetization of this magnetic induction layer is changed according to the variation such as signal magnetic field or the like.By detecting the resistance in lamination joint portion, parallel alignment type joint portion or the end mating type joint portion, limit at this moment, just can detect signal magnetic field.This is effective as the reproduce head in magnetic memory or the like.Can also be used as Magnetic Sensor.
Below the occasion that the magnetic element in above-mentioned each form of implementation 1,14,16,21,22,31 is applied to the magnetic memory of magnetic storage assembly or the like is described.
For this occasion, a magnetic film that can the coercive force in particulate magnetic film 3 and ferromagnetism film 4 or the first ferromagnetism film 33 and the second ferromagnetism film 35 is smaller is as recording layer, and with another as the spin fixed bed.If be exactly for instance, for the occasion that adopts ferromagnetism film 4 as recording layer, by detecting, just can implement regeneration as the ferromagnetism film 4 of recording layer and the induced voltage between the particulate magnetic film 3.That is, make as the spin of the ferromagnetism film 4 of recording layer and can reverse, spin corresponding and with particulate magnetic film 3 parallels or antiparallel state can be specified " 1 ", " 0 ".
In regenerative process,, then, can implement identification owing to making the regenerative voltage difference for " 1 " or for " 0 " by magneto-resistance effect if detect as the ferromagnetism film 4 of recording layer and the voltage between the particulate magnetic film 3.And can pulse current be flow through therein by such as above ferromagnetism film 4, word line being set, and switch the mode of its direction or the like, carry out in ferromagnetism film 4, writing " 1 " or " 0 ".In this course of action, the spin direction of particulate magnetic film 3 is because its coercive force can change direction more greatly and not.
Even which adopts in lamination-type magnetic element 1,14,16,31, the plane magnetic element 21,22, also can constitute aforesaid magnetic memory by mode similarly.Particulate magnetic film 3 can also be used for recording layer, and with ferromagnetism film 4 as the spin fixed bed.For the occasion of using ferromagnetism tunnel binding member 31, its operating principle or the like is all identical.
Magnetic memory of the present invention is non-volatile solids reservoir, can not adopt the such movable part of HDD and realizes high reliability, and can realize more at a high speed action.But also can in bigger scope, implement control to resistance, and can read the information that is recorded with non-destructive mode, can also obtain bigger output.
Below specific embodiments of the invention and evaluation result are described.
Use the high-frequency sputtering method to produce to have the ferromagnetism tunnel conjunctiva of Figure 12 and structure shown in Figure 13.In this ferromagnetism tunnel conjunctiva, become tunneling barrier as the particulate magnetic film.Promptly at first on glass substrate 2, form replace as Figure 12 and ferromagnetism film 4a shown in Figure 13, as lower electrode, length be 10 millimeters, wide be 0.5 millimeter rectangle Cr film.The mode of covering a Cr film part with lid forms particulate magnetic film 3 thereon, forms the ferromagnetism film 4 identical with Cr film shape in the mode with Cr film phase quadrature more thereon subsequently.Form Au film then, between itself and lower electrode, apply voltage, and measure magneto-resistance effect as upper electrode.
The manufacture method of particulate magnetic film 3 can for, with Co80Pt20 alloy and SiO2 is utmost point target, at the Ar atmospheric pressure is that 0.3Pa, substrate bias are under the condition of 400W, carry out the sputter of Co80Pt20 and SiO2 simultaneously, be formed on the film (thickness is 10 millimicrons) that is dispersed with the Co80Pt20 alloy particle among the SiO2.The result who structure is implemented to observe with electron microscope shows that the decentralization of Co80Pt20 alloy particle in SiO4 matrix is approximately 50% in this state.By in film forming procedure, applying the mode of biasing, can grow particle diameter and be approximately 8 millimicrons, grain spacing and be approximately 1.5 millimicrons Co80Pt20 alloying pellet.Measure magnetized result with sample oscillating mode magnetometer and show, coercive force is 2 kilo-oersted sizes, and has tangible magnetic hysteresis.This particulate magnetic film is not observed extraordinary magnetic.
The Co90Fe10 alloy film that can form thickness and be 20 millimicrons on above-mentioned particulate magnetic film 3 is as ferromagnetism film 4b.The magnetization curve of the orthogonal laminated film that is obtained as shown in figure 22.By observing tangible two segment type magnetic hysteresis among the figure, it is reflecting that the particulate magnetic film 3 that is dispersed with the Co80Pt20 alloy particle in SiOx matrix has bigger coercive force, is the smaller coercive force of 20 oersteds and had by the ferromagnetism film 4b that Co90Fe10 constitutes.
In the mensuration process of magneto-resistance effect, apply bigger magnetic field along the negative sense direction earlier, make the spin of Co90Fe10 alloy film and particulate magnetic film all point to the negative sense direction, reduce magnetic field subsequently, and apply along direction.The magnetoresistive ratio that is obtained and the dependence in magnetic field are as shown in figure 23.Corresponding with this magnetization curve, be approximately under the smaller forward the action of a magnetic field of 20 oersteds, resistance will sharply increase, and this shows that this smaller magnetic field makes the Co90Fe10 alloy film produce magnetization inversion, and then has produced magneto-resistance effect.When applying bigger forward magnetic field, the spin of particulate magnetic film also will be reversed and resistance is reduced.Maximum resistance is 2.8 Europe, and magnetoresistive ratio is 14%.
Therefore magnetic element of the present invention has very high sensitivity, and its resistance ratio is low as original ferromagnetism tunnel binding member of barrier with dielectric film.
Comparative example 1
By in the process of making the particulate magnetic film,, be made into the stack membrane identical with its shape with identical materials except not applying mode all identical the substrate bias with first embodiment.The magnetization curve of this moment promptly is the magnetization curve of Co90Fe10 alloy film and the equitant form of magnetization curve of extraordinary magnetic as shown in figure 24.Along with the magnetization inversion of Co90Fe10 alloy film, significantly magneto-resistance effect is about 2%.Because this particulate magnetic film has extraordinary magnetic, so be difficult to realize antiparallel state with the spin of Co90Fe10 alloy film.
Use the high-frequency sputtering method to produce the ferromagnetism tunnel binding film of end limit mating type shown in Figure 180.Promptly at first on glass substrate 2, by the condition identical with first embodiment, form the downside ferromagnetism film 4 that replaces as shown in figure 18, length be 10 millimeters, wide be 0.5 millimeter, thick be 20 millimicrons Cr film.Form AlN insulating barrier 23 thereon.Utilize cluster ion beam subsequently, by incline direction with the end of ion beam irradiation, to process the stack membrane end face of inclination to the stack membrane that constitutes by Cr film and AlN insulating barrier 23.Covering the mode of this hectare angled end-face then with lid, be formed on be dispersed with in the SiOx matrix Co80Pt20 alloy particle, thickness is 10 millimicrons particulate magnetic film 3, form thickness more thereon and be 20 millimicrons, as the Co90Fe10 alloy film of ferromagnetism film 4.
In mating type ferromagnetism tunnel, aforesaid end limit conjunctiva, tunnel current is flowed through between Cr film and the Co90Fe10 alloy film, measures its voltage and magneto-resistance effect is made an appraisal.Its result shows, can observe the magneto-resistance effect of the magnetization inversion of following the Co90Fe10 alloy film.Magnetoresistive ratio is 22%, and magnetization inversion magnetic field is 20 oersteds.
Use high-frequency sputtering method is produced stack membrane as shown in Figure 7.At first on glass substrate 2, being utmost point target with Fe promptly, is that 0.3Pa, substrate bias are under the condition of 400W at Ar air pressure, form as ferromagnetism film 4,20 millimicrons of thick Fe films.Be utmost point target with ((La0.7Sr0.3) MnO3) 80 (Bi2O3) 20 more thereon, implement sputter under these conditions, produce in Bi2O3, be dispersed with ferromagnetic (La0.7Sr0.3) MnO3 particle film (thickness is 10 millimicrons) as particulate magnetic film 3.And then to form thickness on this particulate magnetic film 3 be 20 millimicrons FeMn antiferromagnetism film 10.
Sputter forms the Au electrode on FeMn antiferromagnetism film 10, its with the Fe film between apply voltage, and mensuration magneto-resistance effect.Its magnetoresistive ratio is 33%, and magnetization inversion magnetic field is 50 oersteds.Therefore, be (La0.7Sr0.3) MnO3 particle of 100% by in the particulate magnetic material, adopting the spin utmost point to deflection, magnetoresistive ratio can be increased, and higher sensitivity can be obtained.
Utilize sputter equipment, at first on thermal oxidation Si substrate, form thickness and be 100 millimicrons Ag layer.After the stacked 5 millimicrons Fe layer, on the Fe layer, form the particulate magnetic film more thereon.Can form this particulate magnetic film being utmost point target with Co80Pt20 alloy and SiO2, being that 1 * 10-3Torr, substrate bias are to implement the mode of sputter under the condition of 300W simultaneously at Ar air pressure.So just, obtained in SiO2 matrix, to be dispersed with the CoPt alloy particle, thickness is 10 millimicrons particulate magnetic film.The result that magnetic characteristic is measured shows that the coercive force of particulate magnetic film is about 1.8 kilo-oersteds, and can obtain tangible B-H loop, and does not observe the appearance of extraordinary magnetic.
Make on above-mentioned particulate magnetic film that lamination is provided with Ag (3 millimicrons)/Ni80Fe20 (5 millimicrons) and sample 1 and make the sample 2 of Ag (1 millimicron)/Ni80Fe20 (2 millimicrons) of 10 layers of laminations, subsequently more respectively lamination the Ag layer is set.Respectively under 300 ℃ temperature, sample 1,2 is placed in the magnetic field heat-treats, to obtain uniaxial anisotropy.By the heat treatment of under this magnetic field state, carrying out, Ag is spread apart in the crystal boundary as the Fe layer of ferromagnetism film and Ni80Fe20 layer.Know in can result and separate this ferromagnetism film with Ag by sectional tem.
Tunnel magneto resistance rate of change to sample 1,2 is measured with the dependence that applies voltage.Measurement result as shown in figure 25.By can clearly knowing among Figure 25, even be applied to the reduction that the increase of the magnitude of voltage on the element also can reduce the magnetoresistive ratio of element.Therefore can provide magnetic element with bigger output voltage.And be approximately under the little the action of a magnetic field of 4 oersteds by the Ni80Fe20 that Ag separates, magneto-resistor can produce rapid variation, demonstrates it and has and can be used as the superperformance that magneto-resistance effect type magnetic head, Magnetic Sensor, magnetic memory use.
Utilize sputter equipment, on the glass substrate by being under the condition of 1 * 10-3Torr Co80Pt20 alloy and Cu as utmost point target to be implemented sputter simultaneously at the Ar gas pressure.Carry out 30 minutes 300 ℃ annealing subsequently.So just, obtained in Cu, to be dispersed with the Co80Pt20 alloy particle, thickness is 100 millimicrons particulate magnetic film.The result that magnetic characteristic is measured shows that the coercive force of particulate magnetic film is about 0.3 kilo-oersted, and can obtain tangible B-H loop, and does not observe the phenomenon of extraordinary magnetic.
, in chamber, import Ar+O2 gas again and handle after to go out thickness be 1 millimicron Al film in film forming on the above-mentioned particulate magnetic film, form the Al2O3 film to carry out plasma oxidation.Make the sample 1 of lamination Ag (3 millimicrons)/Ni80Fe20 (5 millimicrons) thereon, or lamination is provided with the sample 2 of 10 layers (Ag (1 millimicron)/Ni80Fe20 (2 millimicrons)), subsequently more respectively film forming thickness be that 100 millimicrons Ag layer is as overcoat.Respectively under 300 ℃ temperature, sample 1,2 is placed in the magnetic field heat-treats, to obtain uniaxial anisotropy.By the heat treatment of under this magnetic field state, implementing, Ag is spread apart in the Ni80Fe20 as the ferromagnetism film.And can separate this ferromagnetism film by clearly knowing among the sectional tem result with Ag.
Tunnel magneto resistance rate of change to sample 1,2 is measured with the dependence that applies voltage.Measurement result as shown in figure 26.And in Figure 26, also show the measurement result of the Co80Pt20/Al2O3/NiFe tunnel junction (comparative example) that the ferromagnetism film is not separated by nonmagnetic material in the lump.The Co80Pt20/Al2O3/NiFe tunnel junction of example as a comparison, its magnetoresistive ratio will sharply reduce when the voltage that is applied to element increases, and divide each element ferromagnetism film, embodiment 2 of opening as having with nonmagnetic elements Cu, Ag, even applying magnitude of voltage increases, the reduction of the magnetoresistive ratio of element is also few, so can obtain bigger output voltage.And be approximately under the little the action of a magnetic field of 4 oersteds by the Ni80Fe20 that Ag separates, magneto-resistor can produce rapid variation, has and can be used as the superperformance that magneto-resistance effect type magnetic head, Magnetic Sensor, magnetic memory use thereby demonstrate it.
Utilize sputter equipment, on thermal oxidation Si substrate, form the Cr substrate film, on this Cr substrate film, produce the particulate magnetic film again.Can form the particulate magnetic film being utmost point target with Co80Pt20 alloy and Al2O3, being that 1 * 10-3Torr, substrate bias are to implement the mode of sputter under the condition of 300W simultaneously at the Ar atmospheric pressure.So just, obtained in Al2O3 matrix, to be dispersed with the CoPt alloy particle, thickness is 10 millimicrons particulate magnetic film.The result that magnetic characteristic is measured shows that the coercive force of this particulate magnetic film is about 2 kilo-oersteds, and can obtain tangible B-H loop, and does not observe extraordinary magnetic.
On above-mentioned particulate magnetic film, be that the condition of 1 * 10-3Torr forms (Mo (1 millimicron)/Co50Fe30Ni20 (2 millimicrons)) film of 5 layers with Ar air pressure.At this moment Ar air pressure so lamination is more smooth, thereby can obtain structure as shown in figure 21, that the ferromagnetism film is separated by nonmagnetic layer than higher.With milling machine this ferromagnetism film is carried out retrofit subsequently,, in magnetic field, implement heat treatment then to obtain uniaxial anisotropy to produce element with structure as shown in figure 15.
Tunnel magneto resistance rate of change to this sample is measured with the dependence that applies voltage.Measurement result as shown in figure 27.For the element with the ferromagnetism film that separates with nonmagnetic elements Mo, even the magnitude of voltage that is applied increases, the reduction of magnetoresistive ratio is also little, therefore can obtain bigger output voltage.And be approximately under the little the action of a magnetic field of 15 oersteds by the Co50Fe30Ni20 that Mo divide to disconnect, magneto-resistor can produce rapid variation, and this demonstrates it has and can be used as the superperformance that magneto-resistance effect type magnetic head, Magnetic Sensor, magnetic memory use.
Embodiment 7
Utilize sputter equipment, under the condition that on the glass substrate is 1 * 10-3Torr, the Co-Fe-Nb-Si-B as utmost point target is implemented sputter simultaneously with Ar air pressure.Carrying out 30 minutes 500 ℃ annealing subsequently, is 100 millimicrons nanocrystal layer to produce thickness.To go out thickness be behind 1 millimicron the Al film to film forming thereon, imports Ar+O2 gas again and handle to carry out plasma oxidation in chamber, forms the Al2O3 film.
Ag (3 millimicrons)/Co (5 millimicrons) is set and constitutes sample at this Al2O3 film superimposed layer.Subsequently thereon film forming go out fixing Ag (3 millimicrons)/Co (5 millimicrons) layer magnetization usefulness, thickness is 7 millimicrons FeMn film, form again as overcoat, thickness is 100 millimicrons Ag film.Sample is put into magnetic field, carry out the heat treatment under 300 ℃, obtaining uniaxial anisotropy, and when just reaching the blocking temperature of FeMn, make magnetic direction rotate 90 degree, and make temperature drop to room temperature.Utilize this heat treatment mode of in magnetic field, implementing, Ag is spread apart in the Co as the ferromagnetism film.So just, having made a ferromagnetism film is that nanocrystal layer, another ferromagnetism film are divided the structure that disconnects with Ag, and this point can clearly be known among the result by sectional tem.
Tunnel magneto resistance rate of change to this sample is measured with the dependence that applies voltage.Measurement result as shown in figure 28.By can clearly knowing among Figure 28, even the magnitude of voltage that element applied among this embodiment increases, magnetoresistive ratio reduces also less.Therefore can obtain bigger output voltage.And nanocrystal layer is being approximately under the little the action of a magnetic field of 3 oersteds, and magneto-resistor can produce rapid variation, demonstrates it and has and can be used as the superperformance that magneto-resistance effect type magnetic head, Magnetic Sensor, magnetic memory use.
Embodiment 8
Utilize sputter equipment, formation thickness is 100 millimicrons Cr film on the SiO2 substrate, produces the particulate magnetic film more thereon.Can form the particulate magnetic film by being utmost point target with Co90Fe10 alloy and Al2O3, being that 1 * 10-3Torr, substrate bias are to implement the mode of sputter under the condition of 400W simultaneously at Ar air pressure.So just, obtained in Al2O3 matrix, to be dispersed with the CoFe alloy particle, thickness is 15 millimicrons particulate magnetic film.The result that magnetic characteristic is measured shows that the coercive force of particulate magnetic film is about 30 oersteds, and can obtain to have the ferromagnetism B-H loop of obvious dihedral, and does not observe extraordinary magnetic.
At this particulate magnetic film superimposed layer Ag (3 millimicrons)/Co80Pt20 (5 millimicrons) film is set, subsequently again film forming go out as overcoat, thickness is that 100 millimicrons Ag layer constitutes sample.Sample is put into magnetic field, carry out the heat treatment under 300 ℃, to obtain uniaxial anisotropy.Utilize this heat treatment mode of in magnetic field, implementing, Ag is spread apart in the crystal boundary as the Co80Pt20 of ferromagnetism film.Can be by knowing clearly among the result of sectional tem that this ferromagnetism film is separated by Ag.
Tunnel magneto resistance rate of change to this sample is measured with the dependence that applies voltage.Measurement result as shown in figure 29.By can clearly knowing among Figure 29, even the magnitude of voltage that is applied on the element increases, and the magnetoresistive ratio reduction is also less, therefore can obtain bigger output voltage.And the particulate magnetic film is being approximately under the little the action of a magnetic field of 30 oersteds, and magneto-resistor can produce rapid variation, has and can be used as the superperformance that magneto-resistance effect type magnetic head, Magnetic Sensor, magnetic memory use thereby demonstrate it.
Claims (20)
1. magnetic element includes:
It is that have electric induction body matrix and be dispersed in ferromagnetism particulate in the described electric induction body matrix and have a coercitive particulate magnetic film,
And and described particulate magnetic film in abutting connection with configuration, and the particulate magnetic film between can flow through the ferromagnetism film of tunnel current.
2. magnetic element as claimed in claim 1, it is characterized in that described ferromagnetism film has the first ferromagnetism film and the second ferromagnetism film of the relative configuration of mode of described particulate magnetic film with clamping, and described tunnel current flows through between the described first ferromagnetism film, described particulate magnetic film and the described second ferromagnetism film.
3. a magnetic element as claimed in claim 1 is characterized in that changing with the external magnetic field by the spin direction that makes a magnetic film in described particulate magnetic film and the described ferromagnetism film, obtains magneto-resistance effect.
4. a magnetic element as claimed in claim 1 passes through to form the mode stacked arrangement of ferromagnetism tunnel junction though it is characterized in that described particulate magnetic film and described magnetic film.
5. magnetic element as claimed in claim 1 is characterized in that mode by forming the ferromagnetism tunnel junction of described particulate magnetic film and described ferromagnetism film, is alignment arrangements along substrate surface on substrate.
6. magnetic element as claimed in claim 1, the diameter of particle that it is characterized in that described ferromagnetism particulate is 5～10 millimicrons, and in described electric induction body matrix with about interval decentralized configuration below 3 millimicrons.
7. a magnetic element as claimed in claim 1 is characterized in that described ferromagnetism particulate is the stratiform configuration in described electric induction body matrix.
8. a magnetic element as claimed in claim 1 it is characterized in that described ferromagnetism film has the two-layer ferromagnetic layer whose that is provided with by the nonmagnetic layer lamination, and described two-layer ferromagnetic layer whose is with antiparallel mode combination each other.
9. magnetic element as claimed in claim 1 is characterized in that also including and applies the bias magnetic field that bias magnetic field uses to described particulate magnetic film and apply film.
10. a magnetic element as claimed in claim 9 is characterized in that described bias magnetic field applies film and has hard magnetic film, antiferromagnetism film or antiferromagnetism exchange film.
11. a magnetic element as claimed in claim 1 is characterized in that described ferromagnetism film is separated by nonmagnetic material.
12. a magnetic element as claimed in claim 11 is characterized in that the crystal grain boundary configuration of described nonmagnetic material along described ferromagnetism film.
13. a magnetic element as claimed in claim 1 is characterized in that described ferromagnetism film has ferromagnetic layer whose and nonmagnetic layer that alternative stacked is provided with.
14. a magnetic unit ox includes:
The insulating barrier that its thickness can make tunnel current flow through,
The first ferromagnetism film and the second ferromagnetism film that the mode of aforementioned dielectric layer disposes with clamping,
And at least one the ferromagnetism film in the described first and second ferromagnetism films is separated by nonmagnetic material.
15. a magnetic element as claimed in claim 14 is characterized in that spin direction by making at least one the ferromagnetism film in the described first and second ferromagnetism films with the variation of external magnetic field, obtains magneto-resistance effect.
16. a magnetic element as claimed in claim 14 is characterized in that the crystal grain boundary configuration of described nonmagnetic material along described ferromagnetism film.
17. a magnetic element as claimed in claim 14 is characterized in that described ferromagnetism film has ferromagnetic layer whose and nonmagnetic layer that alternative stacked is provided with.
18. a magnetic element as claimed in claim 14 is characterized in that described ferromagnetism film has the ferromagnetism particulate that is separated by described nonmagnetic material.
19. a magnetic head includes:
Magnetic element as claimed in claim 1,
And by making the tunnel current described magnetic element electrode used of supplying electric current like that of flowing through.
20. a magnetic memory includes:
Magnetic element as claimed in claim 1,
Apply the recording electrode that current field is used to described magnetic element,
And make the tunnel current described magnetic element of flowing through supply with the regeneration electrode that sense current is used like that.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP118991/97 | 1997-05-09 | ||
| JP118991/1997 | 1997-05-09 | ||
| JP11899197A JP3455055B2 (en) | 1997-05-09 | 1997-05-09 | Magnetic element, magnetic head and magnetic storage device using the same |
| JP39342/1998 | 1998-02-20 | ||
| JP39342/98 | 1998-02-20 | ||
| JP03934298A JP3547974B2 (en) | 1998-02-20 | 1998-02-20 | Magnetic element, magnetic head and magnetic storage device using the same |
Publications (2)
| Publication Number | Publication Date |
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| CN1213867A true CN1213867A (en) | 1999-04-14 |
| CN1210818C CN1210818C (en) | 2005-07-13 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB981148530A Expired - Fee Related CN1210818C (en) | 1997-05-09 | 1998-05-09 | Magnetic component and magnetic head and magnetic memory of using this magnetic component |
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| US (1) | US6114056A (en) |
| EP (1) | EP0877398B1 (en) |
| CN (1) | CN1210818C (en) |
| DE (1) | DE69820524T2 (en) |
Cited By (3)
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Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6365286B1 (en) * | 1998-09-11 | 2002-04-02 | Kabushiki Kaisha Toshiba | Magnetic element, magnetic memory device, magnetoresistance effect head, and magnetic storage system |
| DE19908054C2 (en) * | 1999-02-25 | 2001-06-28 | Forschungszentrum Juelich Gmbh | Uncoupled GMR sensor |
| JP2001014649A (en) * | 1999-06-28 | 2001-01-19 | Hitachi Ltd | Platelike body, inorganic compound substrate, magnetic recording medium and magnetic storage device |
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| US6767655B2 (en) * | 2000-08-21 | 2004-07-27 | Matsushita Electric Industrial Co., Ltd. | Magneto-resistive element |
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| ES2249974B1 (en) * | 2004-03-01 | 2007-06-01 | Consejo Sup. Investig. Cientificas | SPINTRONIC MAGNETORESISTIVE DEVICE, ITS MANUFACTURING PROCEDURE AND ITS APPLICATIONS. |
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| JP2011047930A (en) * | 2009-07-31 | 2011-03-10 | Tdk Corp | Magnetoresistance effect element and sensor |
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Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2620853B1 (en) * | 1987-09-18 | 1989-12-01 | Commissariat Energie Atomique | COMPOSITE MAGNETIC MATERIAL AND MANUFACTURING METHOD THEREOF |
| FR2692711B1 (en) * | 1992-06-23 | 1996-02-09 | Thomson Csf | MAGNETORESISTIVE TRANSDUCER. |
| US5886523A (en) * | 1994-06-18 | 1999-03-23 | University Of Sheffield, The Western Bank | Magnetic field responsive device having giant magnetoresistive material and method for forming the same |
| US5652054A (en) * | 1994-07-11 | 1997-07-29 | Kabushiki Kaisha Toshiba | Magnetic recording media having a magnetic thin film made of magnetic metals grains and nonmagnetic matrix |
-
1998
- 1998-05-07 DE DE69820524T patent/DE69820524T2/en not_active Expired - Fee Related
- 1998-05-07 EP EP98303594A patent/EP0877398B1/en not_active Expired - Lifetime
- 1998-05-08 US US09/074,588 patent/US6114056A/en not_active Expired - Lifetime
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Also Published As
| Publication number | Publication date |
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| EP0877398A2 (en) | 1998-11-11 |
| DE69820524T2 (en) | 2004-09-23 |
| US6114056A (en) | 2000-09-05 |
| EP0877398A3 (en) | 1998-12-23 |
| EP0877398B1 (en) | 2003-12-17 |
| DE69820524D1 (en) | 2004-01-29 |
| CN1210818C (en) | 2005-07-13 |
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