CN1210548C - Reading circuit structure of double-colour line-array infrared focus plane detector - Google Patents
Reading circuit structure of double-colour line-array infrared focus plane detector Download PDFInfo
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- CN1210548C CN1210548C CN 02145430 CN02145430A CN1210548C CN 1210548 C CN1210548 C CN 1210548C CN 02145430 CN02145430 CN 02145430 CN 02145430 A CN02145430 A CN 02145430A CN 1210548 C CN1210548 C CN 1210548C
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Abstract
The present invention relates to the structure of a reading circuit of dual-color line infrared focal plane detector. The present invention comprises a first waveband input stage, a second waveband input stage, a shift register which works together with the two input stages and an outer lead key pressure point. The present invention is characterized in that the present invention is formed by the connection of two serial switch pipes, a photosensitive element, a grid control pipe, an integrating capacitor, a reset switch and a source limit follower, and photosensitive element arrays are electrically connected with each input end of a reading circuit by the interconnection of indium posts. The present invention has the advantage of compact circuit structure, integrating capacitors corresponding to photosensitive element array work points in two wavebands can be separately arranged independently, and response signals in two wavebands are respectively output. Reading circuits manufactured by the structure have a modular form, multi-module seamless splicing can be realized, and a dual-color line infrared focal plane detector can be formed.
Description
Technical field
The present invention relates to double-colored alignment infrared focal plane detector, particularly a kind of double-colored alignment Readout circuits of infrared focal plane array detectors structure.
Technical background
Double-colored infrared focal plane detector, exactly to same radiation field (including all band information), while is at a kind of infrared eye of two specific different infrared bands (for example 2～3um wave band, 3～5um wave band) response, to obtain the customizing messages of target simultaneously.This by the spectral characteristic analysis to target, improves detection and recognition capability to target for infrared systems such as early warning, search, tracking, discerns pseudo-target etc., has important effect.Therefore, in fields such as national defence, the outer focal plane detection technology of dual-color red is an important techniques.
The alignment infrared eye is exactly in the one dimension direction, and infrared photosensitive unit arranges in turn, utilizes the one-dimensional scanning perpendicular to photosensitive identical permutation direction, forms a kind of imaging utensil of two dimensional image.The Double-colour horn wire series infrared detector is exactly on the infrared photosensitive identical permutation direction of one dimension, and two independently response units are arranged on each picture dot position, corresponds respectively to two different-wavebands.So single pass can obtain the infrared image of two wave bands simultaneously.Generally, the manufacturing of sweep type dual-color red external detector has two kinds of methods.Traditional method early is, utilize two independent of each other, be spliced side by side in response to the alignment focal plane device of different-waveband.Doing maximum problem like this is: one, parallel and vertical relatively difficulty in same plane each other will be accomplished by the corresponding photosensitive unit of different response wave band, causes the location dislocation to same picture point, different-waveband thus; Two, particularly to requiring the seamless spliced long alignment focal plane of one dimension direction multimode to make, classic method then is difficult to realize.Another kind is at present just in developing double-colored infrared focal plane detector manufacturing technology, utilize exactly the made of molecular beam epitaxy technique MBE growth sandwich construction have double-colored detection infrared photosensitive first array (the double-colored responsive unit of so-called vertical structure), mix the sensing circuit of double-colored function, realize double-colored detection.The problem of this technology is: one, technical sophistication, and still immature at present; Two, reading circuit structure is special; Three, the double-colored responsive unit of vertical structure, for the focal plane an important parameter---fill factor, curve factor is lower, totally unfavorable to highly sensitive detection.
Summary of the invention:
The technical problem to be solved in the present invention is to overcome the difficulty and the problem of above-mentioned prior art, provide a kind of double-colored alignment Readout circuits of infrared focal plane array detectors, for manufacturing multimode, seamless spliced double-colored long alignment infrared focal plane detector provide a kind of possible implementation.
Technical solution of the present invention is:
A kind of double-colored alignment infrared focal plane detector reading circuit structure comprises wave band one input stage, and wave band two input stages include shift register and outer lead key pressure point that input stage is worked together simultaneously, are characterized in:
A) wave band one input stage is made up of wave band one switching tube M1-1, M1-2......M1-n, wave band one photosensitive yuan of array D1-1, D1-2......D1-n, wave band one input grid-control tube G1-1, G1-2......G1-n, one photosensitive yuan of array D1-1....D1-n of wave band is connected with the source electrode of corresponding wave band one input grid-control tube G1-1...G1-n by wave band one switching tube M1-1....M1-n, and corresponding wave band one integrating capacitor C1-1...C1-n is connected with the drain electrode of wave band one input grid-control tube G1-1...G1-n;
B) wave band two input stages are made up of wave band two switching tube M2-1, M2-2......M2-n, wave band two photosensitive yuan of array D2-1, D2-2......D2-n, wave band two input grid-control tube G2-1, G2-2......G2-n, and two photosensitive yuan of array D2-1....D2-n of wave band are by wave band two switching tube M
2-1....M
2-n is connected with the source electrode of corresponding wave band two input grid-control tube G2-1...G2-1, and corresponding wave band two integrating capacitor C2-1....C2-1 are connected with the drain electrode of wave band two input grid-control tube G2-1...G2-n;
C) wave band one switching tube M1-1, M1-2......M1-n are connected with initial pulse by bus jointly with wave band two switching tube M2-1, M2-2......M2-n, a shared pulse φ
Start
D) wave band one input grid-control tube G1-1, G1-2......G1-n connect wave band one gate control voltage V through wave band one grid-control bus
G1Wave band two input grid-control tube G2-1, G2-2......G2-n connect wave band two gate control voltage V through wave band two grid-control buses
G2
E) be designed to different capabilities or same capability corresponding to wave band one integrating capacitor C1-1, the C1-2......C1-n of wave band one photosensitive yuan of array D1-1, D1-2......D1-n and corresponding to wave band two integrating capacitor C2-1, the C2-2......C2-n of wave band two photosensitive yuan of array D2-1, D2-2......D2-n;
F) shift register read pulse φ
OutOrder output, simultaneously open wave band one switching tube K1-1, K1-2......K1-n and wave band two switching tube K2-1, K2-2......K2-n successively, obtain the signal output sequence of wave band one, wave band two on wave band one source pole follower O1-1, O1-2......O1-n and wave band two source follower O2-1, the O2-2......O2-n respectively
V
o-1{1～n}、V
o-2{1～n}。
G) two photosensitive yuan of arrays of one photosensitive yuan of array of described wave band and wave band are connected by the interconnected electricity that realizes of indium post with sensing circuit wave band one input stage, wave band two input stages.
The photosensitive unit of described wave band one, wave band two correspondences is corresponding one by one, accurately contraposition.
Described wave band one input stage and wave band two input stages are spatially arranged Yi Bian lean on side by side, and distance is determined as requested between the two.
Described double-colored alignment Readout circuits of infrared focal plane array detectors is made modular form, can realize that the seamless intersection splicing of multimode produces double-colored long alignment infrared focal plane detector.
The present invention has following advantage:
1. compare with traditional method, compact conformation, the photosensitive unit of two wave band correspondences is corresponding one by one, and is accurately consistent;
2. photosensitive first array working point of two wave bands can independently be provided with, and is easy to use, flexible,
Help different-waveband and all be in best operating point;
3. the integrating capacitor of two wave band correspondences can design respectively according to concrete application requirements, is beneficial to different-waveband and reaches best performance respectively;
4. the response signal of two wave bands is exported respectively, makes things convenient for digitized processes such as follow-up signal processing, A/D conversion;
5. with the double-colored alignment infrared focal plane detector of this structural circuit preparation, can realize not having and meet splicing, form long alignment infrared focal plane detector;
6. this structure can design various input structure according to concrete needs, to be fit to the coupling of different response wave band to input structure;
7. the present invention does not have specific (special) requirements to photosensitive first technology of preparing, therefore can utilize existing mature technology to realize the double-colored alignment infrared focal plane detector that the arrowband is used;
8. the double-colored alignment infrared focal plane detector of this structure can not improve the frequency of operation of shift register because of the increase of photosensitive unit sum, has reduced sensing circuit and has manufactured and designed difficulty;
9. compare with traditional structure, adopt circuit structure of the present invention, significantly reduced outer lead, the lead-in wire hear rate of device greatly reduces, and helps refrigerator refrigeration;
1O. outer lead reduces, and has improved the reliability of device greatly.
Description of drawings
Fig. 1 is that the double-colored alignment infrared focal plane detector of the present invention sensing circuit space structure is arranged synoptic diagram.
Fig. 2 is the double-colored alignment infrared focal plane detector of a present invention sensing circuit electrical schematic diagram.
Fig. 3 is the double-colored alignment infrared focal plane detector of a present invention sensing circuit sequential chart.Among the figure:
1-wave band one input stage 2-wave band two input stages
The 3-shift register
4-lead-in wire key pressure point 0-input bus
11-wave band one grid-control bus 21-wave band two grid-control buses
Embodiment
At first see also Fig. 1, Fig. 1 is that the double-colored alignment infrared focal plane detector of the present invention sensing circuit space structure is arranged synoptic diagram.Structure of the present invention is that the photosensitive unit of the infrared membraneous material of employing is listed as old and sensing circuit blendes together interconnect architecture.It is to adopt ripe Si CMOS technology to make that sensing circuit manufactures and designs.Entire circuit is made up of four parts: wave band one input stage 1; Wave band two input stages 2; Shift register 3 with signal transmission, switching sequence control and signal read out function module formation of circuit; The lead-in wire key pressure point 4 of bias voltage input, pulse input and signal output.On spatial disposition, wave band one input stage 1 keeps to the side as far as possible, is beneficial to the splicing of longer line array device; Wave band two input stages 2 also should be as far as possible near arrangement under the situation of inverse bonding technology permission.
Fig. 2 is the electrical schematic diagram of double-colored alignment infrared focal plane detector sensing circuit.Fig. 3 is the timing diagram of this circuit.Among Fig. 2, D1-1, D1-2......D1-n represent wave band one each photosensitive unit (not drawing among D1-n Fig. 2) respectively, and C1-1, C1-2......C1-n represent the integrating capacitor (not drawing among the C1-n figure two) of corresponding wave band one respectively.Equally, D2-1, D2-2......D2-n, C2-1, C2-2......C2-n then represent wave band two each photosensitive unit and the integrating capacitors corresponding with it respectively.φ
StartBe circuit initial pulse, V
ResetBe integrating capacitor resetting voltage, φ
ResetBe integrating capacitor reset pulse, φ
OutBe the read pulse of shift register 3, V
G1, V
G2Be respectively wave band one, wave band two input end gate control voltage, regulate V respectively
G1, V
G2, make G1-1, G1-2......G1-n and G2-1, G2-2......G2-n be operated in the subthreshold value state, a Low ESR interface is provided for simultaneously each photosensitive unit, make each photosensitive first bias level constant.Wherein, N end and each switching tube M1-1 of each photosensitive unit (constituting) by P-N ... M1-n, M2-1, ... M2-n realizes that by the inverse bonding interconnection technique electricity connects, and each working pulse bias voltage is connected with peripheral circuit by the lead-in wire key pressure point 4 on the circuit with signal output.V
O-1Be wave band one signal output voltage, V
O-2Be wave band binary signal output voltage, V
DdBe operating bias voltage.The circuit working process is as follows: integrating capacitor reset pulse, i.e. φ
ResetWhen pulse is high level, open simultaneously reset switch pipe S1-1, S1-2......S1-n,, S2-1, S2-2......S2-n, integrating capacitor resetting voltage V
Reset(being generally 3-5V) makes integrating capacitor Ci_j (i=1,2; J=1～n) reset; After resetting, φ
StartWhen initial pulse is high level, open simultaneously switching tube M1-1, M1-2......M1-n,, M2-1, M2-2......M2-n, the photogenerated current that photosensitive first D1-1......D1-n, D2-1......D2-n produce by beginning in capacitance of drain Ci_j upper integral; Work as φ
StartWhen initial pulse is low level, switching tube M1-1, M1-2......M1-n,, M2-1, M2-2......M2-n close, and integration finishes; Shift register 3 read pulse φ
OutSwitching tube K1-1, K1-2......K1-n, K2-1, K2-2......K2-n are opened in order output successively, obtain the signal output sequence V of wave band one, two wave bands on source follower O1-1, O1-2......O1-n, O2-1, the O2-2......O2-n respectively
O-1{ 1～n}, V
O-2{ 1～n}; Read end, φ
ResetHigh level is exported in pulse once more, and begin second round.
Fig. 3 is the sequential chart of circuit working of the present invention, reset pulse φ
ResetNegative edge and initial pulse φ
StartRising edge at least simultaneously, generally to be folded as a little.Read pulse φ
OutFirst pulse output and φ
StartNegative edge simultaneously, generally lag behind a little to well.Corresponding φ
OutEach pulse output obtains each corresponding photosensitive first burst output V
O-1{ 1～n}, V
O-2{ 1～n}.
Claims (4)
1, a kind of double-colored alignment infrared focal plane detector reading circuit structure comprises wave band one input stage (1), and wave band two input stages (2) include the shift register (3) that input stage (1,2) is worked together simultaneously, and outer lead key pressure point (4) is characterized in that:
A) wave band one input stage (1) is made up of wave band one switching tube M1-1, M1-2......M1-n, wave band one photosensitive yuan of array D1-1, D1-2......D1-n, wave band one input grid-control tube G1-1, G1-2......G1-n, one photosensitive yuan of old D1-1....D1-n of row of wave band is connected with the source electrode of the input grid-control tube G1-1...G1-n of corresponding wave band one by wave band one switching tube M1-1......M1-n, and corresponding wave band one integrating capacitor C1-1....C1-n is connected with the drain electrode of wave band one input grid-control tube G1-1....G1-n;
B) wave band two input stages (2) are made up of wave band two switching tube M2-1, M2-2......M2-n, wave band two photosensitive yuan of array D2-1, D2-2......D2-n, wave band two input grid-control tube G2-1, G2-2......G2-n, two photosensitive yuan of array D2-1.....D2-n of wave band are connected with the source electrode of corresponding wave band two input grid-control tube G2-1....G2-n by wave band two switching tube M2-1....M2-n, and corresponding wave band two integrating capacitor C2-1...C2-n are connected with the drain electrode of wave band two input grid-control tube G2-1....G1-n;
C) wave band one switching tube M1-1, M1-2......M1-n are connected with initial pulse by bus (0) jointly with wave band two switching tube M2-1, M2-2......M2-n, a shared pulse φ
Start
D) wave band one input grid-control tube G1-1, G1-2......G1-n connect wave band one gate control voltage Vg by wave band one grid-control bus (11)
1Wave band two input grid-control tube G2-1, G2-2......G2-n connect wave band two gate control voltage Vg by wave band two grid-control buses (21)
2
E) be designed to different capabilities or same capability corresponding to wave band one integrating capacitor C1-1, the C1-2......C1-n of wave band one photosensitive yuan of array D1-1, D1-2......D1-n and corresponding to wave band two integrating capacitor C2-1, the C2-2......C2-n of wave band two photosensitive yuan of array D2-1, D2-2......D2-n;
F) shift register (3) read pulse φ
OutOrder output, simultaneously open wave band one switching tube K1_1, K1-2......K1-n and wave band two switching tube K2-1, K2-2......K2-n successively, obtain signal output sequence Vo-1{1～n}, the Vo-2{1～n} of wave band one, wave band two on wave band one source pole follower O1-1, O1-2......O1-n and wave band two source follower O2-1, the O2-2......O2-n respectively;
G) two photosensitive yuan of arrays of one photosensitive yuan of array of described wave band and wave band are connected by the interconnected electricity that realizes of indium post with wave band two input stages (2) with sensing circuit wave band one input stage (1).
2, double-colored alignment infrared focal plane detector reading circuit structure according to claim 1 is characterized in that: the photosensitive unit of wave band one, wave band two correspondences is corresponding one by one, accurately contraposition.
3, double-colored alignment infrared focal plane detector reading circuit structure according to claim 1 is characterized in that wave band one input stage (1) and wave band two input stages (2) spatially, Yi Bian by arranging side by side.
4,, it is characterized in that this sensing circuit makes modular form according to claim 1 or 2 or 3 described double-colored alignment infrared focal plane detector reading circuit structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02145430 CN1210548C (en) | 2002-11-20 | 2002-11-20 | Reading circuit structure of double-colour line-array infrared focus plane detector |
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| CN 02145430 CN1210548C (en) | 2002-11-20 | 2002-11-20 | Reading circuit structure of double-colour line-array infrared focus plane detector |
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| CN1210548C true CN1210548C (en) | 2005-07-13 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100479150C (en) * | 2006-05-26 | 2009-04-15 | 中国科学院上海技术物理研究所 | Super long alignment infrared focus plane detector |
| CN103159890A (en) * | 2011-12-17 | 2013-06-19 | 清华大学 | Preparation method of fixed electrolyte |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100424492C (en) * | 2006-05-26 | 2008-10-08 | 中国科学院上海技术物理研究所 | Narrowband two-waveband scanning-type infrared focal plane detector |
| CN102393250B (en) * | 2011-07-26 | 2012-12-19 | 电子科技大学 | Method and device for obtaining optimal bias voltage of infrared focal plane detector |
| CN103175614B (en) * | 2013-03-20 | 2015-02-18 | 东南大学 | Sequential integrating two-color infrared focal plane reading circuit |
| CN104458004B (en) * | 2014-11-25 | 2017-08-08 | 中国电子科技集团公司第十一研究所 | Bispectrum section single-chip integration line type infrared focal plane read-out circuit and design method |
-
2002
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100479150C (en) * | 2006-05-26 | 2009-04-15 | 中国科学院上海技术物理研究所 | Super long alignment infrared focus plane detector |
| CN103159890A (en) * | 2011-12-17 | 2013-06-19 | 清华大学 | Preparation method of fixed electrolyte |
| CN103159890B (en) * | 2011-12-17 | 2015-11-25 | 清华大学 | Method for preparing solid electrolyte |
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| CN1412533A (en) | 2003-04-23 |
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