CN1209673C - Process for making low-temperature polysilicon organic electroluminescent apparatus - Google Patents
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Abstract
The present invention relates to a preparation method for making a low-temperature polysilicon organic electroluminescent device, which comprises the following steps that a baseplate is provided, and an amorphous silicon layer is formed on the basepalte; the amorphous silicon layer is used for making a transistor element pattern having a source pole base pattern and a drain pole base pattern via a yellow light preparing process and ion doping; the transistor element pattern having the source pole base pattern and the drain pole base pattern is processed by excited laser drawing temper; a second conducting wire pattern connected with a base pole is formed on the surface of the baseplate; insulating layers having patterns are formed on a base pole layer and a part of a second conducting wire, a first conducting wire having patterns and a first display pole with patterns are simultaneously formed on the baseplate, wherein the insulating layers are clamped between the first conducting wire and the second conducting wire, the first conducting wire is connected with the source pole, and the first display pole is connected with the drain pole; at least one organic electroluminescent layer is formed on the first display pole; a second pole layer is formed on the organic electroluminescent layer, wherein the first conducting wire and the second conducting wire are staggered, and a staggered position is not directly connected and conducted.
Description
Technical field
The invention relates to a kind of method for making of Organic Light-Emitting Device, refer to a kind of method for making that is applicable to the Organic Light-Emitting Device of low temperature polycrystalline silicon especially.
Background technology
Information display is most important man-machine interface, along with the scientific and technological civilization progress mankind lifting also relative to the requirement of information display.Flat-panel screens (FPD) replaces cathode-ray tube (CRT) gradually because have compact advantage, becomes the main flow of display gradually.But flourish along with Information of Science and Technology, follow the demand of the higher parsing and the information capacity of display, the tradition amorphous silicon film transistor drives the usefulness of LCD (a-Si TFT LCD) and has not applied demand, so industry begins to develop the low temperature polycrystalline silicon active drive technology (LTPS TFTs) with more excellent element function, with the demand in response to FPD market.And Organic Light-Emitting Device is in light weight because of having, and high contrast, answer speed height, power consumption are hanged down and the brightness advantages of higher, becomes in recent years to enjoy the new generation flat-panel screens of gazing at.Yet, organic electroluminescent element is because its technology is new, development is compared to other displays evenings, the volume production technology is full maturity not as yet, so have only breadboard sample at present more, particularly low temperature polycrystalline silicon active drive Organic Light-Emitting Device is in commercialization process and a large amount of production run, and it is to be overcome to also have many obstacles to have.
General low-temperature polysilicon film transistor active drive (LTPS-TFT) technology also is to utilize thin film deposition, yellow light lithography, etch process step to make thin film transistor (TFT) and pixel electrode.Yet specifically, low-temperature polysilicon film transistor needs a technology that makes recrystallized amorphous siliconization, for example laser tempering processing procedure (excimer laser annealing).Low-temperature polysilicon film transistor is normally behind laser tempering processing procedure (excimer laser annealing), along practising polysilicon is carried out the ion planting, in suitable for example source electrode (source) drain electrode (drain) of position of element, light dope source electrode (lightlydoped drain (LDD)) and channel layer position implant impurity atoms such as (channel) are polysilicon structure sending into high temperature process such as boiler tube or Rapid Thermal tempering (rapid thermal annealing) foreign atom is activated and makes replied by the surface after the ion damaged.
At present,,, driven straight in by the bottom component that goes directly, cause defective to make component failure, with the ion planting effect that produces by ion for avoiding the passage of polysilicon atom because of being exposed in its regular periods arrangement at ion planting processing procedure.Make polycrystalline silicon substrate adopt a 5-12 inclination angle in existing technology, to reduce the ion planting of the probability that passage exposes; Or by grow up earlier at polysilicon surface different layer material such as oxide or amorphous silicon, channelling effect when the dispersion effect that utilizes its surperficial different layer material to produce reduces the ion planting in polysilicon layer, but relative increase process complexity, the reduction processing procedure efficient of above these methods.
Moreover the suitableeest volume production processing procedure is nothing more than be exactly the process requirement that reduces thermal budget as far as possible, to reduce the time of fabrication process simultaneously.But when making low-temperature polysilicon film transistor active drive (LTPS-TFT) panel, need to carry out, therefore general CMOS processing procedure is just had at least the ion planting in 6-10 road at the different position of element because ion is implanted; And the tempering manufacturing process that the foreign atom that all needs time-consuming chargeable heat budget (thermal budget) together after the ion planting in each road activates in other words to general traditional CMOS processing procedure, also has the tempering manufacturing process of the foreign atom activation in 6-10 road simultaneously.This to production capacity with processing procedure efficient be the technical maximum bottleneck of volume production.So be badly in need of wanting a high efficiency production technology that can conform with the element demand, to promote production capacity.
The inventor whence originally in the spirit of positive invention, is urgently thought a kind of " method for making of low-temperature polysilicon organic electroluminescent apparatus " that can address the above problem because of in this, and several times research experiment is eventually to the invention of finishing this Jiahui common people.
Summary of the invention
A purpose of the present invention is that a kind of method for making of low-temperature polysilicon organic electroluminescent apparatus is being provided, so that can reduce the needed heat budget of processing procedure (thermal budget) of making low-temperature polysilicon organic electroluminescent apparatus, reduce production costs, simplify manufacturing step, improve the efficient and the yield of volume production Organic Light-Emitting Device.
Another purpose of the present invention is that a kind of method for making of low-temperature polysilicon organic electroluminescent apparatus is being provided, reach the addition effect that amorphous silicon is converted into silicon metal and impurity activation simultaneously so that can utilize the laser tempering processing procedure, and utilize the foreign atom of implanting ions in amorphous silicon in advance, in the process of laser tempering crystallization as crystal seed, reduce the energy of activation of crystallization, promote the efficient of crystallization.
Another purpose of the present invention is that a kind of method for making of low-temperature polysilicon organic electroluminescent apparatus is being provided, so that after doing the ion planting at each position prior to the amorphous silicon film layer that grows up to, reach the addition effect that amorphous silicon is converted into silicon metal and impurity activation simultaneously with the laser tempering processing procedure again, channelling effect when preventing the ion planting, and make the foreign atom of implanting ions in amorphous silicon in advance, return in the process of slip-knot crystallization as crystal seed at laser, reduce the energy of activation of crystallization, promote the efficient of crystallization.
The method for making of a kind of low-temperature polysilicon organic electroluminescent apparatus of the present invention is characterized in that, comprises following step:
One substrate is provided;
Form an amorphous silicon layer in this substrate;
With the gold-tinted processing procedure, ion doping forms a plurality of tool source electrodes in this amorphous silicon layer, the transistor unit pattern of drain electrode and base stage pattern;
With all these a plurality of tool source electrodes of excite state laser tempering single treatment, the transistor unit pattern of drain electrode and base stage pattern;
Form the second conductor wire pattern that a plurality of are connected with this base stage in this substrate surface;
Formation one has the insulation course of a pattern on this base layer and part second conductor wire, and on this substrate, form first show electrode that a plurality of first conductor wires and one with a pattern have a pattern simultaneously, wherein be gripped with this insulation course between this first conductor wire and this second conductor wire, this first lead and this source electrode link, and this first show electrode and this drain electrode link;
On this first show electrode, form at least one organic electric-excitation luminescent layer; And
On this organic electric-excitation luminescent layer, form a second electrode lay;
Wherein this first conductor wire and this second conductor wire are staggered, and directly do not connect conducting in the staggered place.
Wherein form this tool source electrode, after the transistor unit pattern of drain electrode base stage pattern forms, also comprise following step:
Have source electrode in each, formation one has the insulation course of a pattern on the element of drain electrode pattern; And formation one has the base layer of a pattern on each layer insulating.
Wherein this amorphous silicon layer is formed with chemical vapour deposition technique or sputtering method.
Wherein this organic electric-excitation luminescent layer is formed with hot vapour deposition method.
Wherein this first show electrode is identical with the major component of this first conductor wire.
Wherein this first show electrode is chromium, molybdenum, tungsten, copper, silver, silver-magnesium alloy, silver-aldary, aluminium or aluminium-magnesium alloy.
Wherein this first lead or second lead material are chromium, molybdenum, tungsten, copper, silver, silver-magnesium alloy, silver-aldary, aluminium or aluminium-magnesium alloy.
Wherein this amorphous silicon is to form on this substrate with chemical vapour deposition technique.
Wherein this second show electrode is a transparency electrode.
Wherein this second show electrode is an indium tin oxide.
Wherein this second show electrode is the aluminium zinc oxide.
Before wherein on this first show electrode, forming at least one organic electric-excitation luminescent layer, be to have at least one boundary's quality guarantee of pattern sheath prior to forming on this part first show electrode.
Wherein this boundary's quality guarantee sheath is Polyimide layer, acryl resin, fluorine resin layer, epoxy resin or silicon oxide layer.
It also is contained in before this second electrode forms, and forms an electron transfer layer, electron injecting layer, electric hole transport layer or electric hole input horizon on this first electrode.
Wherein form a plurality of tool source electrodes with ion doping, the transistor unit of drain electrode base stage pattern is to finish with the implanting ions method.
Because structure of the present invention and method novelty can provide on the industry and utilize, and truly have the enhancement effect, so apply for patent of invention in accordance with the law.
Description of drawings
For after further specifying technology contents of the present invention and being described in more detail in, wherein below in conjunction with specific embodiment and the figure that bows:
Fig. 1 is the cut-open view of low-temperature polysilicon organic electroluminescent panel feature element of the present invention and pixel.
Fig. 2 is the synoptic diagram of low-temperature polysilicon organic electroluminescent panel of the present invention.
Fig. 3 is the synoptic diagram of low-temperature polysilicon organic electroluminescent panel pixel display unit of the present invention.
Embodiment
In the low-temperature polysilicon organic electroluminescent panel formation method of the present invention on substrate conductor layer No.1, the order that second conductor layer forms is unrestricted, is preferably prior to forming second conductor layer on the substrate.First show electrode of active drive formula organic electroluminescence panel of the present invention or the material of auxiliary electrode can be existing electrode material, are preferably low resistive metal; The best is a chromium, molybdenum, tungsten, aluminium or aluminium, aluminium-magnesium alloy (Al-Mg), silver, silver-aldary (Ag-Cu) or silver-magnesium alloy (Ag-Mg).Second show electrode (anode) of low-temperature polysilicon organic electroluminescent panel of the present invention can be existing electrode material, is preferably the transparency electrode material, and is best for pluging with molten metal tin-oxide (ITO) or aluminium zinc oxide (AZO).It is made that this source electrode of active drive formula organic electroluminescence panel of the present invention and this drain electrode are preferably identical material, and the best is that this source electrode and this drain electrode are low temperature polycrystalline silicon.The organic electric-excitation luminescent medium (medium) of active drive formula organic electroluminescence panel of the present invention can be existing organic electric-excitation luminescent medium, be preferably and also include an electron transfer layer, electron injecting layer, luminescent layer, the organic electric-excitation luminescent circle matter of electric hole transport layer or electric hole input horizon, and this electron transfer layer, this electron injecting layer, this luminescent layer, this electricity hole transport layer or should be positioned at this first show electrode by electricity hole input horizon, and between this second show electrode.Between this second conductor wire and this first conductor wire of active drive formula organic electroluminescence panel of the present invention, preferable have at least one media protection (passivation) layer.This media protection (passivation) layer can be existing protection (passivation) layer material, is preferably this media protection (passivation) layer and is Polyimide layer, acryl resin, fluorine resin layer, epoxy resin or silicon oxide layer.This base stage of active drive formula organic electroluminescence panel of the present invention, the relative height configuration of this source electrode (source) and this drain electrode can be existing configuration, is preferably this source electrode and this drain electrode between this base stage and this substrate (that is configuration of top-gate).Be preferably between the source electrode of low-temperature polysilicon organic electroluminescent panel of the present invention and this base stage and have an insulation course, and be preferably between this source electrode and this base stage and also have an insulation course.In the manufacture method of low-temperature polysilicon organic electroluminescent substrate of the present invention, the step that forms amorphous silicon on substrate can be existing amorphous silicon and forms step, is preferably with the long-pending method in chemical gaseous phase Shen and forms amorphous silicon on this substrate.In the manufacture method of low-temperature polysilicon organic electroluminescent panel of the present invention, the formation of source electrode, drain electrode, light dope circle electricity (LDD) layer and channel layer (channel) pattern is to form with existing step, be preferably with the gold-tinted processing procedure, ion doping, the step of implanting ions forms; Be more preferred from through the gold-tinted processing procedure, ion doping, after the step of implanting ions, with excite state laser (excimer laser) to this source electrode, this drain electrode, this light dope circle electricity (LDD) layer and this channel layer carry out tempering and activation (activation).The manufacture method of active drive formula organic electroluminescence panel of the present invention firmly has source electrode for also being contained in each, and formation two has the insulation course of pattern on the element of drain electrode pattern; And the step that on each layer insulating, forms base layer with pattern.
Low-temperature polysilicon organic electroluminescent element display of the present invention is preferably the display panel with the luminous pixel of red, green and blue plural number (pixel) array, with show image; Organic electroluminescent element display of the present invention can certainly be the display panel of monochromatic plural luminous pixel (pixel) array because of needs.
The low-temperature polysilicon organic electroluminescent display panel of manufacturing of the present invention can be applicable to any image, picture, purposes or equipment that symbol and literal show are preferably TV, computer; printer; screen; the display board of transport carrier (vehicle); signal machine; communication apparatus; phone; light fixture; car light; conversation type e-book; micro-display (microdisplay); the demonstration of fishing (fishing) equipment; the sub-assistant of individual number (personal digital assistant); game machine (game); the demonstration of the demonstration of aircraft (airplane) equipment and recreation eyeshade etc.
For allowing the auditor can more understand technology contents of the present invention, be described as follows especially exemplified by Organic Light-Emitting Device and method for making preferred embodiment thereof.
Please refer to Fig. 1 of the present invention, Fig. 2 and Fig. 3, Fig. 1 is a synoptic diagram of the present invention.Low-temperature polysilicon organic electroluminescent apparatus of the present invention is the substrate 100 that has a plurality of pixel display units 110 for.Each pixel display unit 110 has a transistor unit 200 and a show electrode element (not shown).This transistor unit 200, for having source electrode 210, base stage 230 and 220 the thin film transistor (TFT) of draining.This transistor unit 200 is with the gold-tinted processing procedure in this preferable example, the COMS processing procedure manufacturing of doping impurity.Wherein this source electrode 210 and this drain electrode 220 be through the low temperature polycrystalline silicon processing procedure, and formed through excimer laser tempering and activation processing.And the show electrode element (not shown) of this pixel then for being positioned at substrate 100 surfaces, and includes at least two electrode layer 310,320 and organic light emitting medium layers 330.Wherein in this electrode layer, being positioned at substrate surface is cathode layer 310, is anode layer 320 on cathode layer.Organic motor luminescence medium layer 330 then is folded between this cathode layer 310 and the anode layer 320.In this preferable example, this cathode layer is aluminium, aluminium-magnesium alloy, silver, silver-aldary (Ag-Cu) or silver-magnesium alloy (Ag-Mg), and this anode layer 320 is transparent indium-tin-oxide (ITO) electrode or aluminium zinc oxide (AZO).And the negative electrode 310 of the show electrode element (not shown) of this pixel is connected with the drain electrode 220 of the transistor unit 200 of this pixel, to be circulated to drain electrode 220 o'clock from source electrode 210, provide enough electric current luminous with the organic motor luminescence medium layer 330 that drives the show electrode element in electric current.
Panel between each pixel display unit 110 is provided with a plurality of conductor wires.This conductor wire roughly is divided into two groups of conductor wires.First group of conductor wire is source electrode conductor wire 410, is to be a plurality of parallel conductor wires, and is the vertical bar shaped conductor wire that is parallel to each other in this preferable example.This each first group of conductor wire is to be connected with the source electrode 210 of the transistor unit 200 of a plurality of pixel display units 110, with transmitting display signal therefor; Wherein first group of this material with the negative electrode 310 of display unit (not shown) of conductor wire is identical.In this preferable example, the material of this first group of conductor wire and negative electrode 310 is aluminium or aluminium-magnesium alloy, silver-aldary or silver-magnesium alloy (Ag-Mg).
And second group of conductor wire is base stage conductor wire 320.This base stage conductor wire 320 is a plurality of parallel conductor wires, and is the vertical bar shaped conductor wire that is parallel to each other in this preferable example.This each second group of conductor wire is to be connected with the base stage 230 of the transistor unit 200 of a plurality of pixel display units 110, with transmission signals.
The method for making of Organic Light-Emitting Device of the present invention is prior to forming an amorphous silicon layer on the substrate 100, is to form an amorphous silicon layer with chemical vapour deposition technique in glass baseplate surface in this preferable example.On the amorphous silicon substrate, form polycrystalline SiTFT element 200 with CMOS processing procedure of the present invention more afterwards.
Thin-film transistor element 200 is with CMOS processing procedure formation of the present invention, comprises recycling sputter or evaporation earlier, and the coating photoresistance, the light shield exposure, and gold-tinted processing procedure pattern (pattern) steps such as development and etching form source electrode and drain electrode pattern (pattern).Again with the gold-tinted fabrication steps, doping impurity or implanting ions form light dope circle matter layer (LDD) pattern afterwards.Succeeded by excite state laser (eximer lasere) all source electrodes that formed of temper together and drain electrode pattern, and reach the addition effect that amorphous silicon is converted into silicon metal and impurity activation simultaneously.Like this then make the foreign atom of implanting ions in amorphous silicon in advance, also can return in the process of slip-knot crystallization as crystal seed at laser, reduce the energy of activation of crystallization, promote the efficient of crystallization.Depositing insulating layer material thereupon, and form the insulation course pattern with the gold-tinted processing procedure.Then deposit the base layer material, and form the pattern of base stage and base lead (second conductor wire) with the gold-tinted processing procedure.Source electrode conductor layer 410 and cathode electrode 310 materials are amassed in Shen again, and wherein this source electrode conductor layer 410 and cathode electrode 310 material major components can be identical or different, and in this preferable example, this source electrode conductor layer 410 and cathode electrode 310 materials are identical.This source electrode conductor layer 410 and cathode electrode 310 materials are aluminium or silver simultaneously in this preferable example, and form the pattern of source electrode lead 410 and negative electrode pixel electrode 310 with the gold-tinted processing procedure.Wherein this source electrode lead 410 (first conductor wire) and this polysilicon source electrode 310 or drain 320 is connected, and this drain electrode 420 is connected with this negative electrode pixel electrode.So form a plurality of base stages 230 that have, source electrode 210, the transistor unit of 220 patterns that drain be in this substrate, and form the negative electrode 310 of pixel electrode simultaneously, and the source electrode lead 410 of this panel and base lead 420 are in this substrate.
Deposit an adhesive interface layer 350 and a protective seam 340 (passivation layer) and form protective seam 340 patterns in substrate surface afterwards,, form protective seam 340 with outside this predetermined pixel electrode position with the gold-tinted processing procedure.Carry out the formation of organic functional basic unit thereupon in the surface of this pixel electrode negative electrode, for example in present embodiment, form electric hole input horizon, electric hole transport layer, organic light emitting medium layer, electron transfer layer and electron injecting layer with hot evaporation coating method.And after finishing the organic functional layer, the mode with sputter or evaporation forms an anode electrode layer in this organic functional basic unit uppermost surface again.This anode electrode layer is the indium tin oxide transparency electrode in present embodiment.
Its manufacture method of Organic Light-Emitting Device of the present invention, when forming the film crystal pipe unit, form amorphous silicon membrane prior to substrate, the back implanting ions step of utilizing form source electrode, behind the drain electrode pattern, it is utilized the laser tempering processing procedure once with all amorphous silicon source electrodes, the drain electrode pattern converts polysilicon source electrode and drain electrode to again.So, can effectively utilize the chaotic structural arrangement of uncrystalline silicon itself, the channelling effect when preventing the ion planting.In addition and since be first growth amorphous silicon film layer and finish the ion planting at each position after, again to source electrode and drain electrode or many elements that needs conversion, carry out the laser tempering processing procedure together with the amorphous silicon source electrode, the drain electrode pattern converts polysilicon source electrode and drain electrode to.Therefore can be as traditional low temperature polycrystalline silicon CMOS basal plate making process, finish each different element (for example source electrode or drain electrode) with the ion implantation step after, all need the independently complexity and the inefficiency of laser tempering processing procedure.
Easy speech, utilize the method for making of Organic Light-Emitting Device of the present invention, in the amorphous silicon source electrode, after drain electrode (for example with gold-tinted processing procedure and implanting ions step) pattern forms, only need amorphous silicon be converted into silicon metal to finish the polysilicon source electrode with one laser tempering processing procedure, the formation of drain electrode (for example with gold-tinted processing procedure and implanting ions step) pattern, and reach the addition effect of impurity activation simultaneously.And the processing procedure of traditional low tempterature poly silicon thin film transistor (TFT), because needing to carry out ion at the different position of element implants, and the tempering manufacturing process that all needs the foreign atom activation of time-consuming chargeable heat budget (thermal budget) together after the ion planting in each road, need the tempering manufacturing process (because traditional CMOS processing procedure needs the ion planting in 6-10 road to I haven't seen you for ages) of the foreign atom activation in 6-10 road simultaneously, significantly reduce the needed heat budget of processing procedure, and significantly promote production capacity and enhance productivity.In addition, Organic Light-Emitting Device of the present invention and manufacture method thereof, be after doing the ion planting at each position prior to the amorphous silicon film layer that grows up to, reach the addition effect that amorphous silicon is converted into silicon metal and impurity activation simultaneously with the laser tempering processing procedure again, channelling effect when it can prevent the ion planting, and make the foreign atom of implanting ions in amorphous silicon in advance returns in the process of slip-knot crystallization as crystal seed at laser, reach the energy of activation that reduces crystallization, promote the efficient of the efficient of crystallization.
Moreover, Organic Light-Emitting Device of the present invention and manufacture method thereof, the conductive connection (Bus line) of cathode material with low tempterature poly silicon is incorporated into processing procedure, than the processing procedure of traditional low tempterature poly silicon thin film transistor (TFT), can reduce at one extra negative electrode film-plating process of organic electroluminescence panel.And reach the effect that reduces resistance, capacitance delays effect (RC delay).
In sum, no matter the present invention all is different from the feature of prior art with regard to purpose, means and effect, is a quantum jump of " method for making of Organic Light-Emitting Device ".Only it should be noted that above-mentioned many embodiment give an example for convenience of explanation, the interest field that the present invention advocated should be as the criterion so that claim is described certainly, but not only limits to the foregoing description.
Claims (15)
1. the method for making of a low-temperature polysilicon organic electroluminescent apparatus is characterized in that, comprises following step:
One substrate is provided;
Form an amorphous silicon layer in this substrate;
With the gold-tinted processing procedure, ion doping forms a plurality of source electrodes that have in this amorphous silicon layer, the transistor unit pattern of drain electrode and base stage pattern;
Have source electrode, a transistor unit pattern of drain electrode and base stage pattern so that excite state laser tempering single treatment all this is a plurality of;
Form the second conductor wire pattern that a plurality of are connected with this base stage in this substrate surface;
Formation one has the insulation course of a pattern on this base layer and part second conductor wire, and on this substrate, form first show electrode that a plurality of first conductor wires and one with a pattern have a pattern simultaneously, wherein be gripped with this insulation course between this first conductor wire and this second conductor wire, this first lead and this source electrode link, and this first show electrode and this drain electrode link;
On this first show electrode, form at least one organic electric-excitation luminescent layer; And
On this organic electric-excitation luminescent layer, form a second electrode lay;
Wherein this first conductor wire and this second conductor wire are staggered, and directly do not connect conducting in the staggered place.
2. the method for making of low-temperature polysilicon organic electroluminescent apparatus as claimed in claim 1 is characterized in that, wherein forms this tool source electrode, after the transistor unit pattern of drain electrode base stage pattern forms, also comprises following step:
Have source electrode in each, formation one has the insulation course of a pattern on the element of drain electrode pattern; And formation one has the base layer of a pattern on each layer insulating.
3. the method for making of low-temperature polysilicon organic electroluminescent apparatus as claimed in claim 1 is characterized in that, wherein this amorphous silicon layer is formed with chemical vapour deposition technique or sputtering method.
4. the method for making of low-temperature polysilicon organic electroluminescent apparatus as claimed in claim 1 is characterized in that, wherein this organic electric-excitation luminescent layer is formed with hot vapour deposition method.
5. the method for making of low-temperature polysilicon organic electroluminescent apparatus as claimed in claim 1 is characterized in that, wherein this first show electrode is identical with the major component of this first conductor wire.
6. the method for making of low-temperature polysilicon organic electroluminescent apparatus as claimed in claim 1 is characterized in that, wherein this first show electrode is chromium, molybdenum, tungsten, copper, silver, silver-magnesium alloy, silver-aldary, aluminium or aluminium-magnesium alloy.
7. the method for making of low-temperature polysilicon organic electroluminescent apparatus as claimed in claim 1 is characterized in that, wherein this first lead or second lead material are chromium, molybdenum, tungsten, copper, silver, silver-magnesium alloy, silver-aldary, aluminium or aluminium-magnesium alloy.
8. the method for making of low-temperature polysilicon organic electroluminescent apparatus as claimed in claim 1 is characterized in that, wherein this amorphous silicon is to form on this substrate with chemical vapour deposition technique.
9. the method for making of low-temperature polysilicon organic electroluminescent apparatus as claimed in claim 1 is characterized in that, wherein this second show electrode is a transparency electrode.
10, the method for making of low-temperature polysilicon organic electroluminescent apparatus as claimed in claim 1 is characterized in that, wherein this second show electrode is an indium tin oxide.
11. the method for making of low-temperature polysilicon organic electroluminescent apparatus as claimed in claim 1 is characterized in that, wherein this second show electrode is the aluminium zinc oxide.
12. the method for making of low-temperature polysilicon organic electroluminescent apparatus as claimed in claim 1; it is characterized in that; before wherein on this first show electrode, forming at least one organic electric-excitation luminescent layer, be to have at least one boundary's quality guarantee of pattern sheath prior to forming on this part first show electrode.
13. the method for making of low-temperature polysilicon organic electroluminescent apparatus as claimed in claim 12 is characterized in that, wherein this boundary's quality guarantee sheath is Polyimide layer, acryl resin, fluorine resin layer, epoxy resin or silicon oxide layer.
14. the method for making of low-temperature polysilicon organic electroluminescent apparatus as claimed in claim 1 is characterized in that, it also is contained in before this second electrode forms, and forms an electron transfer layer, electron injecting layer, electric hole transport layer or electric hole input horizon on this first electrode.
15. the method for making of low-temperature polysilicon organic electroluminescent apparatus as claimed in claim 1 is characterized in that, wherein forms a plurality of tool source electrodes with ion doping, the transistor unit of drain electrode base stage pattern is to finish with the implanting ions method.
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| DE102015004603A1 (en) * | 2015-04-09 | 2016-10-13 | Siltectra Gmbh | Combined wafer fabrication process with laser treatment and temperature-induced stresses |
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