CN1208995C - Organic transistor active matrix organic luminous display device and its manufacturing method - Google Patents
Organic transistor active matrix organic luminous display device and its manufacturing method Download PDFInfo
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- CN1208995C CN1208995C CNB021488622A CN02148862A CN1208995C CN 1208995 C CN1208995 C CN 1208995C CN B021488622 A CNB021488622 A CN B021488622A CN 02148862 A CN02148862 A CN 02148862A CN 1208995 C CN1208995 C CN 1208995C
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- 238000004519 manufacturing process Methods 0.000 title abstract description 6
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- 229920003169 water-soluble polymer Polymers 0.000 claims description 2
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Abstract
The present invention belongs to an active matrix organic luminous display and a manufacturing method thereof. Two hole type organic thin film transistors are adopted to form a constant current circuit to drive an organic luminous diode pixel with a transparent electrode as a positive electrode. Each of the organic transistors has a sandwich structure or a double insulating grid structure. The manufacturing method comprises: at first the organic transistor constant current circuit is prepared, organic luminous diodes are manufactured, and an organic luminous layer is free from the influence of photoetching technology.
Description
Technical field:
The present invention relates to a kind of organic transistor active array organic light emitting display device.
The invention still further relates to the manufacture method of this display unit.
Background technology:
Active Matrix LCD At is that organic/polymer light-emitting is realized a kind of effective ways that low energy consumption and high information show.Having organic/polymer light-emitting Active Matrix LCD At technology now mainly adopts low temperature polycrystalline silicon or two kinds of transistorized constant-current circuits of amorphous silicon to realize.Though low temperature polycrystalline silicon has the high advantage of carrier mobility, but the transistorized character of the low temperature polycrystalline silicon of prior art for preparing is inhomogeneous, drives the uniformity that organic light emission is difficult to realize light-emitting pixels with it.The electron type amorphous silicon transistor has been widely applied in the active matrix liquid crystal demonstration, and its operating current can satisfy the requirement of organic light emitting display.Needs were reprocessed at least one amorphous silicon transistor behind the organic light-emitting pixels of processing earlier when but the constant-current circuit that adopts 2 electron type amorphous silicon transistors prepared the Active Matrix LCD At pixel, had influenced the stability of organic light emission pixel like this.The mobility that produces this difficult reason and be the amorphous silicon transistor that adopts the cavity type mode of operation at present is very low.
OTFT (OTFT) is to adopt organic or macromolecular material is the thin-film transistor of active operation material (hereinafter referred to as organic semiconductor).The organic semi-conductor advantage is to be easy to film forming (for example spin coating, evaporation etc.) and film-forming temperature is lower than 200 ℃.Replace the cost that a-Si:H TFT can reduce display greatly with OTFT, can also realize flexible the demonstration.Another advantage of organic semi-conductor is that the mobility of the organic transistor of some cavity type mode of operations at present reaches 1cm
2/ Vs has surpassed the character of electron type amorphous silicon.
Summary of the invention:
One of purpose of the present invention is to provide a kind of organic transistor active array organic light emitting display device, has the advantage that flexible base, board is stablized and adopted to driving voltage.
Another purpose of the present invention is to provide a kind of preparation method of organic transistor active array organic light emitting display device.
For achieving the above object, active array organic light emitting display device provided by the invention is OTFT drive controlling organic luminescence display unit, and the concrete structure of this device is:
On the substrate of active matrix/organic light emitting display, have the multi-strip scanning line and form the matrix pixel and show with many data wires of this scan line square crossing and current source line.Wherein, each pixel has two OTFT (T1 and T2), a storage capacitance and an Organic Light Emitting Diode, grid and the scan line of T1 link, source electrode and the data wire of T1 link, the source electrode of T2 and the anode of Organic Light Emitting Diode link, drain electrode and the current source line of T2 link, and the drain electrode of T1 and the grid of T2 link.
The method of the above-mentioned display unit of preparation provided by the invention, its key step is:
1, the hearth electrode of sputter evaporation scan line, T1 and T2 gate electrode and storage capacitance, and photoetching moulding; Used material is a kind of or any two kinds alloying metal among Ta, W, Ti, the Mo;
2, sputter evaporation gate insulating film; This dielectric film is Ta
2O
5, Al
2O
3, TiO
2A kind of or any two kinds alloyed oxide, or spin on polymers gate insulating film, this dielectric film is PMMA, polyimide or epoxy resin;
3, on gate insulating film the etching via hole so that the drain electrode of T1 and the grid of storage capacitance hearth electrode and T2 are linked;
4, the top electrode of sputter evaporation data wire, current source line, T1 and T2 source-drain electrode and storage capacitance, and adopt lift-off technology photoetching moulding; Used material is a kind of or any two kinds alloying metal among Au, Ag, Ba, Ti or the Mo;
5, sputter evaporation transparency electrode (ITO) is as the anode and the photoetching moulding of Organic Light Emitting Diode;
6, molecular vapor deposition prepares organic semiconductor thin-film active layer as T1, T2 on source-drain electrode, adopts accurate leakage version or lift-off technology directly graphical;
7, the water soluble polymer film that spin coating one deck is thicker goes out the transparency electrode (ITO) of window below spilling as the protective layer of OTFT and dry etching on matrix plate;
8, molecular vapor deposition prepares organic semiconductor thin-film luminescent layer as Organic Light Emitting Diode on transparency electrode;
9, the AM aluminum metallization electrode on organic luminous layer as the negative electrode of Organic Light Emitting Diode;
10, Vacuum Package matrix plate.
The organic transistor that adopts among the present invention is sandwich type organic transistor or two insulated-gate type organic transistor (transfer characteristic curve of typical sandwich type organic transistor is seen accompanying drawing 5), also can adopt the top electrode configuration of prior art or the organic transistor of hearth electrode configuration.
The light-emitting component that the present invention drove is the Organic Light Emitting Diode that adopts prior art.
Substrate among the present invention can be the glass of rigidity, also can be flexible plastics.
Grid can be an ito transparent electrode among the present invention, also can be Metal Cr, Ta, Al, Mo, in Ni, W electrode or they any two kinds.Insulating barrier can be the oxide of metal and transition metal, also can be organic polymer.Source electrode and drain electrode can be Metal Cr, Al, Au, in Ag or they any two kinds.
The anode of Organic Light Emitting Diode is an ito transparent electrode among the present invention, also can be gold (Au), platinum (Pt) electrode that approaches.
The negative electrode of Organic Light Emitting Diode is aluminium (Al) electrode among the present invention, also can be lithium (Li), calcium (Ca), magnesium (Mg) or its alloy.
Advantage of the present invention is as described below:
The present invention has only adopted two cavity type OTFT to realize constant-current source circuit, has to be fit to drive the advantage of the organic LED pixels of processing transparency electrode earlier, and it is little also to have the drive circuit footprint area simultaneously, helps enlarging the advantage of light-emitting pixels size.
The present invention adopts processing constant-current source circuit earlier, and the method for the organic light-emitting pixels of back processing has the little advantage of organic light emission pixel performance influence.
The active array organic light emitting display device that OTFT of the present invention drives has good stability and adopts the advantage of flexible base, board.
Semiconductive thin film of the present invention has the carrier mobility height, OTFT device fabrication temperature is lower than 200 ℃.
Description of drawings
Fig. 1 is the structural profile schematic diagram of active matrix organic light-emitting display unit pixel.1. substrate substrate.2. insulating barrier.3.T2 gate electrode.4.T2 drain electrode.5.T2 source electrode.6. supplemental dielectric layer.7. current source line.8.T2 active layer.9. data wire.10. light-emitting diodes tube anode.11. organic luminous layer.12. light-emitting diodes tube cathode.13. organic transistor protective layer.14. fluid sealant.
Fig. 2 is the equivalent circuit diagram of active matrix organic light-emitting display unit pixel.T1 and T2 are organic transistors.Cs is the pixel storage capacitance.
Fig. 3 is the structural representation of unit pixel among Fig. 1.1. the grid of scan line and T1 pipe.2. the source electrode of data wire and T1 pipe.3. the drain electrode of current source line and T2 pipe.4.T1 switch organic transistor.5.T2 driving organic transistor.6. storage capacitance.7. Organic Light Emitting Diode (OLED).
Fig. 4 is the layout that is used to drive the OTFT active matrix panel of organic light emitting display.1. gate driver.2. signal driver.3.OLED current source.
Fig. 5 is a kind of transfer characteristic curve that adopts sandwich type OTFT device; Switch current ratio reach 105 and threshold voltage be 4.5V.
Embodiment 1 is described below in conjunction with the accompanying drawings:
Embodiment 1
On glass or flexible plastic substrates 1, plate layer of metal Ta film with radio frequency magnetron sputtering method, thickness 200 nanometers, and be photo-etched into the hearth electrode shape of transistorized grid 3 of scan line, T1 and T2 and storage capacitance.Wherein, etching metal Ta adopts reactive ion etching (RIE) dry technique.With dc magnetron sputtering method at grid 3 and reactive sputtering one deck Ta above the substrate 1
2O
5As gate insulation layer 2, thickness 300 nanometers.On gate insulating film, adopt normal photoetching process and dry etch process etching via hole, so that the drain electrode of T1 and the grid 3 of storage capacitance hearth electrode and T2 are linked.Then, spin coating one layer of polymeric (PMMA) is as supplemental dielectric layer 6, and evaporation one layer thickness is the gold (Au) of 80 nanometers and adopts lift-off technology to be photo-etched into the top electrode shape of data wire 8, current source line 6, T1 and T2 source electrode 4 and drain electrode 5 and storage capacitance again.Be that mask autoregistration dry etching falls remaining supplemental dielectric layer (PMMA) with the gold layer of firm photoetching moulding more then.With dc magnetron sputtering method sputter layer of transparent conducting film (ITO), thickness 100 nanometers, and utilize photoetching technique to be processed into anode 10 shapes of Organic Light Emitting Diode.Adopt the molecular vapor deposition method to prepare the P type organic semiconductor layer CuPc of crystallization, about 40 nanometers of CuPc thickness, and adopt the lithography stripping technology to be photo-etched into island 8.Spin coating polyvinyl alcohol (PVA) aqueous solution is as diaphragm 13, and makes window thereon by lithography and expose following transparency electrode (ITO).Prepare the negative electrode (Al) 12 of organic luminous layer 11 and light-emitting diode then continuously, adopt molecular vapor deposition method and thermal evaporation method respectively.Directly in vacuum chamber, carry out packaging technology at last.
Embodiment 2
On glass or flexible plastic substrates 1, plate layer of metal W film with radio frequency magnetron sputtering method, thickness 200 nanometers, and be photo-etched into the hearth electrode shape of transistorized grid 3 of scan line, T1 and T2 and storage capacitance.Wherein, etching metal Ta adopts reactive ion etching (RIE) dry technique.With dc magnetron sputtering method at grid 3 and reactive sputtering one deck Ta above the substrate 1
2O
5As gate insulation layer 2, thickness 300 nanometers.On gate insulating film, adopt normal photoetching process and dry etch process etching via hole, so that the drain electrode of T1 and the grid 3 of storage capacitance hearth electrode and T2 are linked.Then, deposit the thin organic semiconductor layer free base phthalocyanine (thickness 10 nanometers) of one deck earlier, evaporation one layer thickness is the silver (Ag) of 80 nanometers and adopts lift-off technology to be photo-etched into the top electrode shape of data wire 8, current source line 6, T1 and T2 source-drain electrode 4,5 and storage capacitance again.With dc magnetron sputtering method sputter layer of transparent conducting film (ITO), thickness 100 nanometers, and utilize photoetching technique to be processed into anode 10 shapes of Organic Light Emitting Diode.Adopt the molecular vapor deposition method to prepare the P type organic semiconductor layer free base phthalocyanine (about 50 nanometers of thickness) of crystallization again, and adopt the lithography stripping technology to be photo-etched into island 8.Also make window thereon by lithography exposes following transparency electrode (ITO) to spin coating polyvinyl alcohol (PVA) aqueous solution as diaphragm 13.Prepare the negative electrode 12 (Ca/Mg alloy) of organic luminous layer 11 and light-emitting diode then continuously, adopt molecular vapor deposition method and thermal evaporation method respectively.Directly in vacuum chamber, carry out packaging technology at last.
Claims (2)
1, a kind of active matrix organic light-emitting display device, it is characterized in that each pixel has two cavity type OTFT, a storage capacitance and an Organic Light Emitting Diode, the grid and the scan line of OTFT 1 link, source electrode and holding wire link, the source electrode of OTFT 2 and the anode of Organic Light Emitting Diode link, drain electrode links with current source line, and the grid of the drain electrode of OTFT 1 and OTFT 2 links.
2, a kind of method for preparing claim 1 active matrix organic light-emitting display device, key step is:
1), the hearth electrode of sputter evaporation scan line, T1 and T2 gate electrode and storage capacitance, and photoetching moulding; Used material is a kind of or any two kinds alloying metal among Ta, W, Ti, the Mo;
2), sputter evaporation gate insulating film; This dielectric film is Ta
2O
5, Al
2O
3, TiO
2A kind of or any two kinds alloyed oxide, or spin on polymers gate insulating film, this dielectric film is PMMA, polyimide or epoxy resin;
3), the top electrode of sputter evaporation data wire, current source line, T1 and T2 source-drain electrode and storage capacitance, and adopt lift-off technology photoetching moulding; Used material is a kind of or any two kinds alloying metal among Au, Ag, Ba, Ti or the Mo;
4), sputter evaporation transparency electrode (ITO) is as the anode and the photoetching moulding of Organic Light Emitting Diode;
5), molecular vapor deposition prepares organic semiconductor thin-film active layer as T1, T2 on source-drain electrode, adopt accurate leak version or lift-off technology directly graphical;
6) the water soluble polymer film that, spin coating one deck is thicker goes out the transparency electrode (ITO) of window below spilling as the protective layer of OTFT and dry etching on matrix plate;
7), molecular vapor deposition prepares organic semiconductor thin-film luminescent layer as Organic Light Emitting Diode on transparency electrode;
8), the AM aluminum metallization electrode on organic luminous layer as the negative electrode of Organic Light Emitting Diode;
9), Vacuum Package matrix plate;
It is characterized in that etching via hole on gate insulating film is so that link the drain electrode of T1 and the grid of storage capacitance hearth electrode and T2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021488622A CN1208995C (en) | 2002-11-22 | 2002-11-22 | Organic transistor active matrix organic luminous display device and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021488622A CN1208995C (en) | 2002-11-22 | 2002-11-22 | Organic transistor active matrix organic luminous display device and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1411322A CN1411322A (en) | 2003-04-16 |
| CN1208995C true CN1208995C (en) | 2005-06-29 |
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|---|---|---|---|
| CNB021488622A Expired - Lifetime CN1208995C (en) | 2002-11-22 | 2002-11-22 | Organic transistor active matrix organic luminous display device and its manufacturing method |
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| CN (1) | CN1208995C (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100659055B1 (en) * | 2004-06-23 | 2006-12-19 | 삼성에스디아이 주식회사 | Active matrix type organic electroluminescence display device with organic thin film transistor and method of manufacturing the same |
| CN102394240B (en) * | 2011-11-18 | 2013-07-03 | 贵州大学 | TFT (thin film transistor)-LED (light-emitting diode) color array display base plate and manufacturing method thereof |
| KR101486038B1 (en) * | 2012-08-02 | 2015-01-26 | 삼성디스플레이 주식회사 | Organic light emitting diode display |
| KR102000642B1 (en) * | 2012-12-12 | 2019-07-17 | 엘지디스플레이 주식회사 | Organic Light Emitting Diode Display Having High Luminescence |
| CN103928401B (en) | 2014-04-01 | 2017-01-18 | 京东方科技集团股份有限公司 | Array substrate, preparing method thereof and display device |
| EP3467812A4 (en) | 2016-06-02 | 2019-12-18 | Changchun Flexible Display Technology Co., Ltd. | Oled drive circuit and manufacturing method thereof, and display device |
-
2002
- 2002-11-22 CN CNB021488622A patent/CN1208995C/en not_active Expired - Lifetime
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| Publication number | Publication date |
|---|---|
| CN1411322A (en) | 2003-04-16 |
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Effective date of registration: 20180731 Address after: 130000 Chuanyu Jingyue Development Zone, Changchun City, Jilin Province Patentee after: CHANGCHUN FLEXIBLE DISPLAY TECHNOLOGY Co.,Ltd. Address before: 130022 No. 159 Renmin Street, Jilin, Changchun Patentee before: CHANGCHUN INSTITUTE OF APPLIED CHEMISTRY CHINESE ACADEMY OF SCIENCES |
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