CN1199914A - Metal/ferrite laminate magnet and process thereof - Google Patents
Metal/ferrite laminate magnet and process thereof Download PDFInfo
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- CN1199914A CN1199914A CN98107977A CN98107977A CN1199914A CN 1199914 A CN1199914 A CN 1199914A CN 98107977 A CN98107977 A CN 98107977A CN 98107977 A CN98107977 A CN 98107977A CN 1199914 A CN1199914 A CN 1199914A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F7/00—Magnets
- H01F7/02—Permanent magnets [PM]
- H01F7/0273—Magnetic circuits with PM for magnetic field generation
- H01F7/0278—Magnetic circuits with PM for magnetic field generation for generating uniform fields, focusing, deflecting electrically charged particles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/16—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates the magnetic material being applied in the form of particles, e.g. by serigraphy, to form thick magnetic films or precursors therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
- H01J29/58—Arrangements for focusing or reflecting ray or beam
- H01J29/64—Magnetic lenses
- H01J29/68—Magnetic lenses using permanent magnets only
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Abstract
The present invention relates generally to a new metal/ferrite laminate magnet and process thereof. More particularly, the invention encompasses a new process for fabrication of a large area laminate magnet with a significant number of perforated holes, integrated metal plate(s) and electrodes for electron and electron beam control. The present invention also relates to a magnetic matrix and electron beam source and methods of manufacture thereof.
Description
The sequence number of the application and application on May 9th, 1997 is No.08/854,285 United States Patent (USP) is relevant, and its agent's registration number is No.UK9-97-030, and name is called " METAL/FERRITELAMINATE MAGNET ", with the application be same agent, its content is classified reference as at this.
The present invention relates generally to a kind of new metal/ferrite laminate magnet and manufacture method thereof.Specifically, the present invention includes a kind of new method, be used to make and have a large amount of through holes and be used for electronics and the bulk metal plate of electron beam control and the large-area laminate magnet of electrode.The invention still further relates to nonmagnetic matrix and electron beam source and manufacture method thereof.
The nonmagnetic matrix display is especially particularly useful in display application, particularly in the display application of plane.This plane display application comprises television receiver, the visual display unit of computer, particularly portable and desktop computer, special equipment, communication equipment, wall monitor etc.Flat display apparatus based on the nonmagnetic matrix electron beam source is called nonmagnetic matrix display (MMD) hereinafter.
Conventional flat-panel screens, for example LCDs and Field Emission Display provide a kind of Display Technique.Yet these conventional flat-panel screens are complicated, and the manufacturing cost height, and this is because they relate to quite senior semiconductor manufacturing, proprietary material and high tolerance requirement.
U.S. Patent application in application on August 9th, 1996, its sequence number is No.08/695,856, name is called " ELECTRON SOURCE ", also be equivalent to UK Patent Application sequence number No.2304981, transferred the applicant, classified reference as, wherein disclosed a kind of nonmagnetic matrix electron source and manufacture method thereof at this.Also disclosed the application of nonmagnetic matrix electron source in display unit, flat display apparatus for example, the display unit of television receiver, the visual display unit of computer etc.Also disclose a kind of nonmagnetic matrix display unit, wherein had the negative electrode that is used for emitting electrons, permanent magnet, it has the two-dimensional array of the passage that extends between the antipode of magnet, and its direction of magnetization is pointed to facing surfaces from the surface towards negative electrode.Magnet produces magnetic field in each passage, be used for the electronic guide from cathode assembly is entered electron beam.This display unit also has a screen, is used to receive the electron beam from each passage.Screen has the phosphor coating away from a side of negative electrode towards magnet, and phosphor coating comprises a plurality of pixels, and each pixel correspondence a different passage.Be provided with gate devices between cathode assembly and magnet, the electronics that is used for controlling from cathode assembly flows into each passage.The two-dimensional array of passage is separated on the X-Y grid regularly.It is big that the magnet area is compared with its thickness.Flat display apparatus based on the nonmagnetic matrix electron source is also referred to as MMD (MagneticMatrix Display) in industry.
Use permanent magnet in passage or magnetic hole, to form the high-intensity magnetic field of straight line basically, be used to make electronic collimation by the hole.Permanent magnet insulate, and perhaps is up to little conductivity, thereby allows magnetic field to have gradient along the length in hole.The electron beam of Xing Chenging greatly depends on the position of hole in permanent magnet in the position on the phosphor coating like this.
In when operation, these electron beams are guided on the phosphor screen, and the collision of electron beam and phosphor produces light output, its intensity and incident beam electric current be directly proportional (for fixing final anode voltage).Show for colour, use the phosphor (for example red, green, indigo plant) of 3 kinds of different colours, and by selectively making these 3 kinds of mix of basic colors obtain colour.
For colour is accurately reproduced, the location of electron beam on the phosphor of suitable color is important.
By using " black matrix" " (black matrix) to separate different phosphors, can allow error to a certain degree.This material is used to define the color of each phosphor, and becomes than the contrast that secretly strengthens the image that shows by the panel that makes display.Yet, if electron beam misplaces with respect to phosphor, begin to make the light output of phosphor to reduce the loss of the electron beam current of black matrix" (because to), and this can show as brightness irregularities and is found out.If electron beam more seriously misplaces, then it is mapped on the phosphor that it should not be mapped to and produces visible light output.Thereby in fact the electron beam of dislocation produces the light output of false color.This is called purity error (purityerror) and is least desirable demonstration illusion.For the pixel of 0.3mm, general phosphor width is 67 μ m, has the black matrix" of 33 μ m therebetween.
Obviously, at the magnet that is used to form electron beam be used to carry between the glass plate of the phosphor that receives electron beam and need very accurately to aim at.In addition, must in the different operating condition and range, (high low-light level, different ambient temperatures etc.) keep this accurate aligning.
When being used for display, many other magnet characteristics also are important, for example:
1. general employing is that the image of demonstration is formed by the regular matrix of pixel.These pixels generally are positioned on the grid of square or rectangle.In order to keep electron beam being mapped on the matrix with the consistency magnet of image.
2. in operation, be used for setovering and the grid of modulated electron beam and the electric current that the decision of the spacing between electron beam source electron beam carries.The difference of this spacing will cause the difference of electron beam current, and thereby change the output of fluoroscopic light.Thereby requirement is setovered as these and the magnet of the carrier of modulation grid keeps given spacing to electron source.For fear of the difficulty of making, magnet should be flat.
3. display will be subjected to mechanical force, especially during transportation.Magnet must keep the integrality of structure in the allowed band of its stress that may run into.Common acceptable value is equivalent to 30G (294ms
-2) acceleration.
A requirement in addition is, because in the display that magnet will be used to be evacuated, it should not contain in the length of life of display and may decompose and vacuum degree is reduced or any organic compound of Poisoning cathode.
At last, magnet is magnetized along the direction in hole, and this is the magnetic pole corresponding to the surface of magnet.
Magnet by using previously known manufacture method manufacturing to satisfy above-mentioned requirements is impossible.Really, the magnet (for example ferrite) that does not have the required size of aperture is to obtain easily, but the existence of aperture can cause some problems.
If the aperture in the magnet will form, can use laser or machine drilling after ferrite-plate is sintered.Yet the ferrite of sintering is stone material, and it will be expensive and time-consuming forming aperture with these technology, and this is undesirable.
Aperture also can form in ferritic raw material plate by known punching press/boring method before the sintering, is typical method in the multi-layer ceramics manufacturing of this method in microelectronic applications.Yet, expect during sintering, to have many problems, for example:
1. magnetic sheet will be subjected to uneven convergent force and cause " the moving " in hole-produce unequal radial displacement from its normal position.
2. magnet itself easily " bending ", thus the part of major diameter ball formed.
Between adjacent hole since the stress in hole concentrate effect and rupture easily.
4. in order to obtain the length in required hole, a plurality of thin slices overlap each other, and may misalignment take place and cause not having " sight line " to pass through the hole when stacking.
Another problem is, ferrite is tough firmly and not material, and the existence of aperture significantly reduces the mechanical strength of plate.Like this, in the time of during transportation may running into big bump, the mechanical breakdown of magnet may take place fully.
U.S. Patent No. 4,138,236 have disclosed a kind of method that connects hard and soft magnetic ferrite assembly and oxide glass.Oxide glass can add before or after premelt or main fusing.At last, the ferrite assembly is melting above under the temperature of glass soft spots.
U.S. Patent No. 4,540,500 what disclosed a kind of able to sinter at low temp is the oxide magnetic material that the glass of 0.1-5% prepares by add weight ratio in ferrite.In some cases, sintering temperature can reduce to about 1000 ℃ or lower.
U.S. Patent No. 4,023,057 has disclosed a kind of compound magnet that is used to make the motor stator with stepped construction, but comprising the thin flexible magnet of making by the particle of permanent magnetization, barium ferrite for example, they are embedded in flexible substrate for example in the rubber.Design various stacked structures and be used to produce stronger magnetic field, and the metallic gasket that use approaches in most of stepped construction, so that destroy each magnetic field of flexible magnetism element, increase the magnetic flux density of synthetic magnetic pole, and permanent-magnetic field is oriented in the magnetic circuit of motor.
Disclosed Japanese patent application No.JP60093742 has disclosed a kind of display, wherein has focusing electrode, and it utilizes the conductive magnetism main body and splash-proofing sputtering metal coating and making on a surface of magnetic main body.Require focusing electrode to have conductivity so that realize its function.Coating is not increased the mechanical structure of magnet basically by sputter thereby very thin.Pass through many electron beams in each hole in the magnet.
Sequence number on March 24th, 1997 application is No.08/823,669, name is called " magnet and manufacture method thereof ", transfer in the applicant's the U.S. Patent application and disclosed a kind of magnet-photosensitive glass composition and manufacture method thereof, classifies reference as at this.
Yet prior art does not disclose or instructs metal/ferrite laminate magnet of the present invention and manufacture method thereof.
The present invention is the new structure and the manufacture method thereof of a kind of metal/magnetizing mediums (for example ferrite) laminate magnet.
Therefore, one object of the present invention is, a kind of structure and method are provided, and it will provide the metal/ferrite laminate magnet in the most preferred embodiment.
Another object of the present invention is, a kind of mask is provided, be used to form have multiple phosphor (RGB) thus the reception electron beam form display glass plate.
Another object of the present invention is, a kind of structure is provided, and utilizes magnetic lamination can realize the electron beam of one or several collimation by this structure.
Another object of the present invention is, a kind of structure that can use together with the responsive technology of any electronics is provided.
Another object of the present invention is, a kind of stacked metal/ferrite magnet is provided, and wherein has the many perforates that are used to guide electronics and electron beam.
Therefore, in one aspect of the invention, comprise a kind of method that is used to form metal/ferrite laminate magnet, comprise the following steps:
(a) on metallic plate, form at least one perforate with first surface and second surface,
(b) on the described first surface of described metallic plate, connect at least one ferrite layer,
(c) on the described second surface of described metallic plate, connect at least one dielectric layer,
(d) form perforate by described ferrite layer and described dielectric layer, make at least a portion of described perforate and the perforate in the described metallic plate overlap, thereby form described metal/ferrite laminate magnet.
In another aspect of this invention, comprise a kind of electron source, comprising at least one cathode assembly and at least one metal/ferrite laminate magnet, wherein said magnet has many magnetic channels that extend between the antipode of described magnet, wherein each magnetic channel makes the electron stream that receives from described cathode assembly form target-bound electron beam.
Believe that feature of the present invention is new, these features have proposed in claims.Accompanying drawing only is for the present invention being described, also not drawing in proportion.In addition, identical in the accompanying drawings label is represented identical parts.But, the detailed description that the present invention's structure itself and method of operation are done by consulting with reference to the accompanying drawings can be better understood, wherein:
Fig. 1 illustrates most preferred embodiment of the present invention, and wherein metal/ferrite laminate magnet is guided the electron beam from negative electrode into display screen.
Below the laminate magnet that Fig. 2 explanation is seen from cathode plane or the view at the back side.
Fig. 3 is the end face of the laminate magnet seen from last anode planes of explanation or the view of front.
The method of the especially stacked metal/ferrite magnet of most preferred embodiment of the present invention is made in Fig. 4-10 explanation.
According to the present invention, a kind of electron source is provided, comprise cathode assembly and laminate magnet.Laminate magnet is drilled with many passages that extend between the relative magnetic pole of magnet, wherein each passage can guide or lead and enter the target-bound electron beam from the electronics of cathode assembly reception.
In most preferred embodiment of the present invention, electron source comprises the gate devices that is arranged between cathode assembly and the magnet, and the electron stream that is used to control from cathode assembly enters magnetic channel.
Magnetic channel preferably is arranged in the magnet with the form of the two-dimensional array of row and column.
Preferably gate devices comprise a plurality of parallel column conductors with vertically disposed with column conductor and with a plurality of parallel row conductor of column conductor insulation, each passage is positioned on the different intersection point of column conductor and row conductor.
Gate devices can be arranged on the surface of the cathode assembly of magnet.In addition, gate devices also can be arranged on the surface of the magnet of cathode assembly.
Cathode assembly can comprise for example feds of pop-up device.In addition, cathode assembly can comprise photocathode.In some embodiments of the invention, negative electrode can comprise the thermionic emission device.
In a specific most preferred embodiment of the present invention, each passage can have along its length shapes and/or the different cross section of area.
In a most preferred embodiment of the present invention, each passage can be taper, and the end towards cathode assembly of passage has maximum surface area.
Stacked magnet preferably includes ferrite.In some embodiments of the invention, magnet can comprise ceramic material.In most preferred embodiment of the present invention, magnet also can comprise binder.Binder can be organic or inorganic.Preferably binder comprises the unorganic glass composition that contains the glass that forms oxide, thereby makes in manufacturing and the performance the best in using.
In most preferred embodiment of the present invention, the cross section of passage is rounded.In other embodiment of the present invention, the rectangular or polygon in the cross section of passage, the turning of each passage or edge also can chamferings or are cut into circular arc.
Magnet can comprise one group of lamination with boring, and boring in each lamination and the boring in the adjacent laminates are aimed at, thereby constitutes the passage by one group of lamination, and one group of lamination is arranged like this, makes the same pole of lamination face with each other.Between lamination, can insert pad (spacer), so that make the lamination group have the lens effect of improvement.
On at least one surface of magnet, insulating barrier can be set, puncture so that reduce.
Most preferred embodiment of the present invention comprises the lip-deep anode assembly away from negative electrode that is arranged on magnet, is used to make the electronic deflection that penetrates from passage.
Anode assembly preferably includes the anode that a plurality of row that are parallel to passage extend, these anodes comprise paired anode, each is corresponding to the different row of passage, every pair comprises first and second anodes, opposite side along the row of corresponding anode extends respectively, the first anode interconnects, and second plate interconnects.Best, anode is partly round passage.
Specific embodiment of the present invention comprises the device that is used for applying deflecting voltage on first and second anodes, thereby makes the electron beam deflecting that penetrates from passage.
On the one hand, the present invention is a kind of display unit, comprising: above-described the sort of electron source; Be used to receive the screen from the electronics of electron source, it has the phosphor coating away from cathode side towards magnet; Be used for gate devices and anode assembly are applied control signal, thereby selectively control from negative electrode by the electron stream of passage, so as on screen, producing the device of image to phosphor coating; Be used to provide the voltage gradient that is added on the magnet, thus the device of the electronics in the accelerated passage; And under required voltage towards the device of phosphor screen accelerated electron.
On the other hand, the present invention is a kind of display unit, comprising: above-described the sort of electron source; Be used to receive the screen from the electronics of electron source, it has the phosphor coating away from cathode side towards magnet, and phosphor coating comprises many groups of different phosphors of the figure that is set to separately, and each is organized corresponding to different passages; Be used for gate devices and anode assembly are applied control signal, thereby selectively control from negative electrode by the device of passage to the electron stream of phosphor coating; And be used for the antianode device defection signal is provided, thereby in order being addressed to by the electronics that penetrates in the passage on the suitable phosphor of phosphor group, so as on screen, producing the device of coloured image.Described phosphor group preferably includes red, green, blue phospher.
Arrangement for deflecting preferably is set is used for red, green with the order that repeats from the electronics of passage ejaculation, indigo plant, red ... or red, green, red, indigo plant ... be addressed on the suitable phosphor.In addition, arrangement for deflecting can be set be used for red, green with the order that repeats from the electronics of passage ejaculation, indigo plant, red ... or red, green, red, indigo plant ... be addressed on the suitable phosphor.
The preferred examples of display unit of the present invention comprises and being arranged near the final anode layer on the magnet plates of phosphor coating.
Screen can be an arc at least one direction, and each interconnection between the adjacent first anode and between the adjacent second plate constitutes resistive element.
The specific preferred examples of display unit of the present invention comprises that thereby being used for dynamically changing the DC level that is added on the anode assembly makes the device of aiming at from the electronics and the phosphor coating on the screen of magnetic channel ejaculation.
Some examples of display unit of the present invention can comprise the alumin(i)um backing adjacent with phosphor coating.
Be appreciated that the present invention can extend to computer system, comprising: storage device; Be used for and storage device between the data transfer device of Data transmission; Be used for handling the processor device of the data of storing at storage device; And comprise that above-mentioned electron source is used to show the device of the data of being handled by processor device.
Be further appreciated that the present invention extends to a kind of print head that comprises aforesaid electron source.Be further appreciated that the present invention extends to document handling apparatus, thereby provide data to produce the device of hard copy according to data comprising this print head with to print head
On the other hand, the present invention is a kind of triode device, comprising: cathode assembly; Stacked magnet wherein is drilled with a plurality of passages that extend between opposite magnetic pole, each passage makes the electronics that receives from cathode assembly form electron beam; Be arranged on the gate devices between cathode assembly and the magnet, be used to control electron stream admission passage from cathode assembly; And the lip-deep anode assembly away from negative electrode that is arranged on magnet, be used for by passage towards the glass plate accelerated electron that contains phosphor.
Another aspect of the present invention is a kind of method that is used to make the electron beam collimater, comprise: the metallic plate that forms boring, the dielectric half-finished product plate of boring and the ferrite semifinished product plate that contains synthetic of boring, form metal electrode conductor and synthetic magnetic structure, thereby produce stacked magnet with desirable characteristics.
Described method can comprise mixed ferrite and binder before forming powder bed.Preferably binder comprises glass particle.
Described method can be included in the surface deposition anode assembly of the boring of magnet.
Best, described method be included in magnet away from deposit control gate devices on the surface on surface of carrying anode assembly.
At least a in the step of the step of deposit anode assembly and deposit control gate devices can comprise photoetching.In addition, can use coating, silk screen printing or decalcomania (decal transfer) deposit anode assembly and control gate devices.
Another aspect of the present invention is a kind of manufacturing display unit electronic method, comprising: make electron source according to aforesaid method; The fixing screen of phosphor-coating of near surface at the magnet of carrying anode assembly; And space and space between cathode assembly and the magnet and the space between magnet and the screen between the cathode assembly of finding time.
Another aspect of the present invention is a kind of method of pixel that addressing has the display screen of a plurality of pixels that is used for, each pixel have continuous linearly first, the second and the 3rd sub-pixel, described method comprises: produce a plurality of electron beams, each electron beam is corresponding to a different pixel, and, make each electron beam deflecting, thereby according to second pixel, first pixel, second pixel, the sub-pixel of the order addressing respective pixel repeatedly of the 3rd pixel.
Referring now to accompanying drawing,, Fig. 1 for example, colored nonmagnetic matrix display of the present invention comprises: first plate of carrying negative electrode 20 is glass plate 10 for example, and second plate 90 glass plate 90 for example, carry at least one phosphor pixels or point or bar 80 for example towards at least one coating of the RGB phosphor bar of arranging in order 80 of negative electrode 20.Phosphor bar 80 is the high voltage phosphor preferably.Final anode layer 95 is set on the phosphor coating 80.
Anode array 50 be formed on magnet 60 on the surface of phosphor bar 80.The operation of display for convenience of explanation, this surface 63 will be called the top of magnet 60.The relevant anode 50 of each row with array of a pair of and pixel well 70.Every antianode extends along the opposite side of the corresponding row of pixel well 70.Control grid 40 is formed on the surface of the magnet 60 of negative electrode 20.The operation of display for convenience of explanation, this surface 61 will be called the end of magnet 60.
Control grid 40 comprises first group of parallel control grid conductor 42, direction along row strides across magnet surface 61 extensions, and second group of parallel control grid conductor 44, stride across magnet surface 61 along the direction of row and extend, thereby each pixel well 70 is positioned on the intersection point of various combination of capable grid conductor 44 and row grid conductor 42.As described later, plate 10 and 90, and magnet 60 is installed in together the back sealing, then whole assembly found time.
In operation, electronics discharges from negative electrode 20, forms electron beam 30, and is attracted to control grid 40.Control grid 40 provides ranks array addressing mechanism, is used for selectively electronics being imported each pixel well 70.Electron beam 30 enters the pixel well 70 of addressing by grid 40.In each pixel well 70, has magnetic field.As shown in figure 10, at the top of pixel well 70, metallic plate 105 is by pixel well 70 accelerated electrons, and an antianode 50 provides the lateral deflection of selection for the electron beam 30 that penetrates.Then, electron beam 30 quilts quicken towards the high voltage anode of formation on glass plate 90, thereby electron beam 30 at a high speed is provided, and it has enough energy and passes anode and the following phosphor 80 of arrival, thereby produces light output.The voltage of high-voltage anode generally remains 10KV.
For the purpose of aforementioned calculation, anode 50 is considered to be in same current potential with phosphor 80, thereby between has a constant electric field.If use the phosphor of low-voltage, this structure is acceptable.Yet, in most preferred embodiment of the present invention, use the high pressure phosphor, thereby require final anode 95 to be in much higher current potential than deflection anode.Like this, electron beam 30 will continue after near leaving anode 50 to quicken to final anode 95.This causes that again electron beam 30 changed its path before its bump phosphor 80.Accelerating field between anode 50 and the final anode 95 reduces the deflection effect of anode 50.Therefore, the length of anode 50 can increase and not have the danger of a large amount of electronics and its bump.This has reduced the sensitiveness of display for the manufacturing tolerance during making at the deflection anode.
Return Fig. 1 now, above-mentioned magnet 60, the boring 70 in magnet 60 allows magnetic line of force closure, thereby is provided at the magnetic field in the pixel well 70.For magnet 60, wish that manufacturing cost is quite low; Non-conductive, so as to making it as the base plate of making conductive traces; And mechanical strength is good; Thermally-stabilised; Not too heavy; And for the display of making various sizes is tractable.
At least some in the above-mentioned performance can be satisfied by the magnet 60 that stacked Ferrite Material is made.
As mentioned above, display has cathode assembly 20, the grid or the control utmost point 40, and anode 50.Thereby this structure is considered to a kind of audion.Electron stream from cathode assembly 20 is controlled by grid 40, so as to the electric current of control flows anode 50.The speed and the quantity of the electronics that clashes into phosphor 80 is depended in the brightness that should be noted that display.In general, final anode 95 is maintained at (for example about 10KV) on the constant current potential, and electronics quickens to make electronics have enough energy towards this current potential, thereby guarantees have enough photons to send from phosphor 80, promptly finishes a conversion process of energy.
As mentioned above, magnet 60 is the required various conductors of formation triode as base plate deposit thereon.Deflection anode 50 is deposited on the end face 63 of magnet 60, and control grid 40 is fabricated on the bottom surface 61 of magnet 60.Should be appreciated that it is sizable that the conductor that the size of these conductors and current planar technique are for example used in liquid crystal display or the Field Emission Display is compared.Conductor can be deposited on the magnet 60 easily by film or the thin film technique of using any routine.
Cathode assembly 20 can comprise the array of an emission tip or the array (for example noncrystal diamond or silicon) of an emission sheet emitter.In this case, control grid 40 can be formed on the feds base plate.In addition, cathode assembly 20 can comprise plasma or thermal region negative electrode, and in this case, control grid 40 can be formed on the bottom surface 61 of foregoing magnet.The advantage of ferrite composition magnet is that the ferrite composition can be used as needs the accurately carrier and the support of all structures of the display of aligning.
In another embodiment of the present invention, cathode assembly 20 comprises photocathode.
As mentioned above, in some embodiments of the invention, control grid 40 control beam electronic currents thereby control brightness.Display can a responding digital vision signal promptly or logical (on) or disconnected (Off) and do not have a pixel of gray scale.In this case, a grid 40 just can be enough to control beam electronic current.But the application of this display is limited, and in general, needs the simulation or the gray-scale Control of certain form.Thereby, in other embodiments of the invention, provide two grids; One is used to be provided with black level or biasing, and another is used to be provided with the brightness of each pixel.May be at need in Wehnelt cathode, this double-grid structure also can carry out the array addressing of pixel.
The difference of the CRT monitor of display of the present invention and routine is, in CRT monitor, once only illuminates a pixel, and in display of the present invention, once illuminates a full line or a permutation.Other advantage of display of the present invention is to utilize the ranks driver.And generally LCD is for driver of each RGB passage requirement of display, and display of the present invention uses all 3 kinds of colors are used pixel well 70 (thereby grid is also like this).Bundle addressing combination with above-mentioned this means that with respect to comparable LCD the driver of requirement has reduced 3 times.Additional advantage is that in active LCD, conductive traces must pass through between the semiconductor switch of making on the screen.Because these tracks are not luminous, its size must be limited, and makes the user can't see.In display of the present invention, all tracks all ensconced the following of phosphor 80 or ensconced magnet 60 below.Owing to have sizable spacing between the neighbor trap, so track can be done greatlyyer.Thereby can easily overcome capacity effect.
The quite high efficient of phosphor 80 determines the drive characteristic of grid structure at least in part.Minimizing is to change the scanning convention about a kind of method of the voltage of operation bundle addressing system.In most preferred embodiment of the present invention and common R G B R G B ... difference, its scanning is organized like this, makes efficient is minimum in phosphor bar figure phosphor between two phosphors the most effective.Like this, for example, if the minimum phosphor of efficient is red, then B R G R B R G R is pressed in scanning ... figure carry out.
In most preferred embodiment of the present invention, between deflection anode 50, introduce fixing DC potential difference.This current potential can change by regulator potentiometer, thereby allows to proofread and correct any remaining mis-alignment between phosphor 80 and pixel well 70.The mis-alignment of bidimensional can be by compensating in the modulation that applies a variation during carry out line scanning from the top to bottom.
As mentioned above, most preferred embodiment of the present invention relates to the different pixel addressing technology of using among a kind of and CRT and the LCD.In the CRT monitor of routine, by to the row of data flatly scanning beam and in succession data line vertically scanning beam carry out the pixel addressing.For a pixel, the real time of phosphor excitation is very short and time interval between in succession the excitation at interval, and promptly the frame rate of Xian Shiing is longer.Thereby the light that has limited each pixel is exported.Realize gray scale by changing beam current density.In the active array LCD of routine, each pixel comprises 3 sub pixels (RGB), and each has the switching transistor of himself.Color is selected and can be carried out according to row or column.But by convention, color is selected to carry out according to being listed as to drive.Video data and clock synchronization from video source are sent to shift register, till the value (promptly for 640 * 3 sub-pixels of VGA image) of a row of accumulation.Data are transferred in the memory as the DAC of every row abreast then.General use 3 or 6 DAC.Line driver is selected to want addressed row, and each color has 3 gray scale, can obtain 512 kinds of colors.Can expand to 4096 kinds of colors by one temporary transient dither.Vibrate the color that can further expand to more than 4096 kinds by the software local high-frequency.Utilize the gray scale of 6 in certain color, can expand to 262144 kinds of colors by the vibration of software local high-frequency.Light output is backlight efficiency, polarization loss, the function of aperture and colour filter transmission loss.In general, efficiency of transmission has only 4%.
In most preferred embodiment of the present invention, the transmitted beam addressing is carried out color and is selected.In order to help this bundle addressing, fast 3 times of the common scanning frequency rate of row speed ratio, and R, G and B are carried out multiplexing in order.In addition, frame rate can be than common fast 3 times, and use the color (fieldseqential color) of field sequence.Should be appreciated that field sequence scanning can produce irritating visual effect to the observer with respect to display motion.The principal character of display of the present invention is as follows:
1 by pixel of a pixel well 70 generations.
2 color of pixel are determined by each the relative drive strength that puts on 3 kinds of primary colours.
3 phosphors 80 are set on the panel 90 with strip.
4 primary colours are by the bundle addressing system scanning synchronous with grid control.
5 electron beams are used to encourage the high pressure phosphor.
6 by being controlled at grid voltage (thereby electron beam density) the realization gray-scale Control of each pixel well bottom.
7 full lines or permutation are by the while addressing.
8 if desired, and the minimum phosphor 80 of efficient can be by double scanning, thereby relax the requirement to gate driving.
9 phosphors 80 are maintained at constant DC and depress.
The flat-panel screens of above-mentioned aspect ratio routine has lot of advantages, describes by above order below.
1 pixel well notion has reduced the complexity of making display.
2 in CRT monitor, have only about 11% electron beam current to penetrate and excitation phosphor three colour cells from shadow mask, and in display of the present invention, equal or guide each phosphor bar into by the bundle addressing system and be utilized near the electron beam current of 100% beam electronic current.The utilance of whole beam electronic current can reach 33%, is 3 times of conventional display.
3 strip phosphorescence physical efficiencys stop the moire disturbance that takes place in the bar direction.
4 for easily realizing in the control structure of bundle addressing system and the area that track can utilize on the top of magnet easily, thereby do not require the narrow and photoetching accurately in conventional LCD.
5 high pressure phosphors are very familiar and obtain easily.
6 grid voltages control analogue system.Thereby only be used to the DAC restriction of driving grid 40 for the number of significant digit of every kind of color.Because each pixel well row only relates to a DAC, and to be used for the available time of digital-to-analogue conversion be very long, can realize easily according to the higher resolution of gray scale granularity.Like this, can realize " genuine color " (24 or more) with quite low cost.
7 as the LCD of routine, and display of the present invention uses row/row addressing technology.Yet different with conventional CRT monitor, the actuation duration of phosphor is actually 1/3rd of line period, for example: bigger 200 to 300 times between 600 and 1600 pixels than the every capable resolution of CRT monitor.Especially under the situation of higher resolution, can also be higher.Its reason is that conventional CRT shows that required row and picture flyback time is unwanted for display of the present invention.A conventional CRT monitor horizontal retrace period generally is exactly 20% of a whole line period.In addition, in display of the present invention before and after along the time more than, thereby the advantage that obtains adding.Additional advantage comprises:
(a) every row/row only need a driver (conventional color LCD needs 3).
(b) can obtain very high light output.In the CRT monitor of routine, the phosphor actuation duration than its of much shorter time of delay.This means that a photon is only launched in each place during each frame scan.In display of the present invention, the actuation duration is longer than time of delay, thus each scan period each place launch a plurality of photons.Thereby, can obtain much bigger brightness output.This is to Projection Display and show it is favourable under the sunlight of direct projection.
(c) gate switch speed is quite low.Be appreciated that and in display of the present invention, in magnetic field, work at the conductor that forms on the magnet.Thereby the inductance of conductor produces undesirable EMF.Reduce switching speed and can reduce EMF, also can reduce stray magnetic field and electric field.
8 gate drive voltages are relevant with the cost of switch electronic circuit.The cmos switch electronic circuit can provide lower cost, and the CMOS level signal is also always than for example the relevant level signal of bipolar technology is low with other technology.In LCD, carry out two scannings, for example, screen scan in two and abreast two half, favourable cost drive technology is provided like this, yet, different with technology among the LCD in display of the present invention, in display of the present invention, two scannings double brightness.
In low pressure FED, phosphor voltage is converted and the pixel addressing is provided.When little phosphor stripe pitch, this technology causes big electric field strength between bar.The FED of medium or high-resolution thereby can have the danger of electrical breakdown.Yet in display of the present invention, with the same in the CRT monitor of routine, phosphor is retained as under the single final anode voltage.In most preferred embodiment of the present invention, on phosphor, have the aluminium backing, equally stop the electric charge accumulation and improve brightness.Electron beam is energized fully, so that pass aluminium lamination and make following phosphor ballistic phonon.
Fig. 2 be the laminate magnet 60 seen from the plane of negative electrode 20 below or the view at the back side 61.Can see that the hole or the opening 65 of hole in row conductor 42 or opening 41 and the hole in column conductor 44 or opening 43 and magnet 60 align, thereby form hole or pixel well 70.
Fig. 3 is the end face of the laminate magnet 60 seen from the plane of phosphor screen 80/90 or the view of front 63.Can see that anode 50 has the first deflection anode 52 and the second deflection anode 54.The first deflection anode 52 control or along a direction guiding or deflection beam 30, and second plate 54 controls or along a different direction guiding or a deflection beam 30.
A kind of manufacture method of Fig. 4-10 explanation laminated metal/ferrimagnet of the present invention.Fig. 4 represents rolled metal plate 5, and it preferably can be up to about 1000 ℃ oxidation environment.Apply photoresist 6 on this metallic plate 5, it is exposed and develops and form the figure in hole 7 in resist 6.Metallic plate 5 and the photoresist 6 that is developed are placed in the etching agent, and etching agent only corrodes the metal in the zone of the agent protection that is not etched.This just forms the array in required hole 65 in metallic plate 5, thereby forms the metallic plate 105 of porous, as shown in Figure 5.
For some application, may special handle metallic plate 105, so that strengthen the bonding between itself and ferrite layer subsequently and/or the dielectric layer.This can or form bonding enhancing metal or the oxide selected by deposit on one or two surface of metallic plate 105 and realize.But, also can use suitable binder that ferrite layer and dielectric layer are fixed on the metallic plate 105.
Ferrite layer 15 passes through in conjunction with Ferrite Material and glass powder, organic bond, and solvent and medium, thus formation can be cast into the slurry of thin ferrite-plate and make.The technology type that is used to make the technology of these thin ferrite-plates and is used to make conventional multi-layer ceramics flitch seemingly.After drying, cast panel is cut into suitable dimensions, thereby forms ferrite layer 15, is used for further processing.
Use similar fashion, form thin electric Jie's flitch 13 by electric dielectric material being treated as slurry.After drying, these cast panels also are cut into suitable dimensions and form thin electric Jie's flitch 13 that will be used for further processing.Dielectric layer 13 can form with other technology, for example the surface of oxidized metal plate 105.
As shown in Figure 6, by the thin electric Jie's flitch 13 of side combination, at the thin ferrite flitch 15 of opposite side combination and form original " unprocessed " stepped construction 109 at the metallic plate 105 of etching.Preferably stepped construction 109 is fixed, and makes not move between each layer.This can be by realizing with pressurization or by these layers are bonded on the metallic plate 105 these parts of stepped construction 109 or layer heating simultaneously.
After original " unprocessed " stepped construction 109 was formed, use hole 65 conducts of etching in advance in metallic plate 105 were directed at manufacturing hole in ferrite flitch 15 and the electric Jie's flitch 13.The hole that forms in the flitch part of stepped construction 109 can be by the universal machine of knowing in the art, laser machine or electron beam technology manufacturing.This is shown in Fig. 7, wherein original " unprocessed " stepped construction 109 drilled porose 65, this hole forms in ferrite flitch 15 and electric Jie's flitch 13 in advance, thereby form the ferrite flitch 115 of porous and electricity Jie flitch 113 of porous, they and metallic plate 105 combine, thereby form the unprocessed stepped construction 119 of original porous.
The original unprocessed stepped construction 119 of a plurality of porous can be combined into the unprocessed stepped construction 129 of secondary.This can be by heating each parts and pressurizeing or by using organic bond to realize once more.Must be careful in this step, so that guarantee to aim at hole 65 in each minor structure.
The unprocessed stepped construction 129 of secondary is carried out heat treatment by this way, the organic principle that feasible expulsion or decomposition may exist in structure 129.The also coalescent particle that is used to make ferrite and dielectric layer of this heat treatment is bonded in ferrite layer 115 and dielectric layer 113 on the metallic plate 105, and ferrite layer 115 is connected with each other, and this can be clear that from Fig. 8.Note that for the sake of clarity not shown through hole 65 in the stepped construction of Fig. 8.
The heat treatment of the unprocessed magnetic structure 129 of secondary is preferably in than carrying out under the low temperature of the temperature that makes metallic plate 115 generation permanent deformations.Be added on glassy phase in the ferrite powder and will strengthen the sintering character of structure.
Make sintering stepped construction 129 another kind of method as shown in Figure 9, wherein structure 109 is as shown in Figure 6 stacked and is formed structure 159.Remove and only formed porose 65 and do not have outside the hole 65 in metallic plate 105 in ferrite layer 115 or dielectric layer 113, that stack and stacked structure 159 and stepped construction 129 are similar.This structure 159 is formed structure 159 by local sintering then, wherein basically without any organic substance and also by densification partly.This local densification of stepped construction 159 should make it possible to use mechanical device to form the hole of passing through dielectric layer 113 and ferrite layer 115.A kind of method that forms hole 65 is to use medium jet or impacting with high pressure medium 155.No matter use any method, must carefully make unlikely breakable layer stack structure 159.A kind of method of avoiding breakable layer stack structure 159 is that the side in stepped construction 159 fixedly has metallic plate or the metallic plated template 151 corresponding to the perforate 155 in hole 65, and it will be subjected to the bump of impact media 156.Metal template 151 also should have polymer or the rubber spacer 153 that contains perforate 155.By perforate 155 near the particle the particles hit perforate 65 of impact media 156, particle 157 is evicted from, thereby in dielectric layer 113 and ferrite layer 115, forms hole 65, form and have the stepped construction 129 of through hole 65.Stepped construction 129 with through hole 65 now can be by sintering fully, if also be not sintered.
After the stepped construction 129 that forms sintering, on this structure, apply or form anode 52,54 and first group of control grid 42 or 44, can be clear that by Figure 10.
For example metallic pattern 42,44,52 and 54 can be by a kind of the making in many technology for these conductive metal pattern, comprising the silk screen printing of metal cream, and the light of the metal level that applies or mechanical-moulded or use the metal decalcomania of moulding in advance.According to using the technology that forms metallic pattern, may need then to heat-treat.
In order to form metallic pattern 42,44, be preferably in after for example initial metallic pattern 42 applies on the surface of the stepped construction 129 of sintering, can vertically apply second group of control grid 44 with first group of metallic pattern 42 or 44, because be that grid 42 is at first formed or grid 44 is formed at first that it doesn't matter.But, before applying second group of control grid, can be at first group of electrode deposit dielectric layer 121 on the electrode 42 for example, thus make the electrode mutually insulated.Dielectric layer 121 can be provided with the form of raw material plate of bonding, and it can be made into to be sprayed on lip-deep slurry, perhaps uses conventional thin film deposition technology well known in the art to provide.
According to applying the technology that dielectric layer 121 uses, the stepped construction 129 of sintering may need to carry out another time heat treatment, so that make the powder of dielectric layer coalescent.What must accomplish in this step is that the hole 41,43 and 65 that forms pixel aperture 70 in stepped construction does not change because of applying dielectric layer 121.In case dielectric layer 121 be applied to sintering stepped construction lip-deep first group control grid on after, second group control grid just can with first group vertically coated.
The utilization of these metallicities can utilize the aforesaid any technology that is used for surface metalation.
But, should be noted that all metals and dielectric attribute can be used on the stepped construction of sintering with unsintered preforming form.Then, sintering will be bound up on these features on the initial stepped construction for the second time.
After the laminate 60 of making last sintering, will carry out electric test, physical examination and at last ferrite layer 115 being polarized, thus produce required magnetic field.Should be appreciated that the polarization of ferrite layer 115 can be carried out before or after magnet laminate 60 is assembled into device.In addition, the polarization of ferrite layer 115 also can at high temperature take place.
An advantage of magnet laminate 60 of the present invention is that perforate 65 or pixel well 70 needn't be aimed at by pixel well 70 fully in order to make electron beam 30.
For the ease of understanding, used 80 pairs of most preferred embodiments of the present invention of color phosphor bar to be illustrated, but, the present invention also can be applicable to any monochromatic type technology.Being also to be understood that for the present invention phosphor 80 needn't be bar shaped, for example, can be phosphor dot 80 or phosphor pixels 80 etc.
Though the present invention is illustrated in conjunction with specific embodiment,, obviously, those skilled in the art can make many changes and remodeling and correction according to above-mentioned explanation.Therefore, propose appended claim, it will comprise all changes that drop within scope of the present invention and the design, remodeling and correction.
Claims (72)
1 one kinds of methods that are used to form metal/ferrite laminate magnet is characterized in that comprising the following steps:
(a) on metallic plate, form at least one perforate with first surface and second surface,
(b) on the described first surface of described metallic plate, connect at least one ferrite layer,
(c) on the described second surface of described metallic plate, connect at least one dielectric layer,
(d) form perforate by described ferrite layer and described dielectric layer, the part of feasible described at least perforate and the part of the perforate in the described metallic plate are overlapping, thereby form described metal/ferrite laminate magnet.
2 the method for claim 1, it is characterized in that described at least one perforate in described metallic plate forms as follows: on described metallic plate, apply one deck photoresist at least, thereby described resist exposure and development are formed the figure in hole, on described metallic plate, form described at least one perforate thereby follow the described metallic plate of etching.
3 the method for claim 1 is characterized in that laser beam is passed through in described at least one perforate in described metallic plate, and electron beam or mechanical device form.
4 the method for claim 1 is characterized in that also comprising the steps: mixed ferrite material and glass particle, thereby organic bond and solvent form the ferrite slurry; By described slurry being mixed casting and the dry ferrite original plate that forms; Die-cut described ferrite original plate becomes described at least one ferrite layer.
5 the method for claim 1 is characterized in that also comprising the steps: the mixed dielectric material and form the dielectric slurry; By described dielectric slurry is mixed, cast also dry and formation dielectric original plate; Die-cut described dielectric original plate and become described at least one dielectric layer.
6 the method for claim 1 is characterized in that described at least one ferrite layer is connected on the described first surface of described metallic plate by heating and pressurization.
7 the method for claim 1 is characterized in that described at least one ferrite layer is connected on the described first surface of described metallic plate by applying at least a binder.
8 the method for claim 1 is characterized in that described at least one dielectric layer is connected on the described second surface of described metallic plate by heating and pressurization.
9 the method for claim 1 is characterized in that described at least one dielectric layer is connected on the described second surface of described metallic plate by applying at least a binder.
10 the method for claim 1 is characterized in that at least one conducting metal is connected near the described perforate.
11 the method for claim 1 is characterized in that also being included in the step that connects at least one anode assembly on the surface of described perforate of described magnet.
12 the method for claim 1 is characterized in that also being included in the step that connects at least one control gate devices on the described surface away from the described surface of carrying anode assembly of described magnet.
13 the method for claim 1 is characterized in that the technology deposit that the use of described anode assembly and described control gate devices is selected: photoetching, silk screen printing from the group that comprises following technology, decalcomania, coating, or binder figure, at least a conducting medium of dry then deposit.
14 the method for claim 1, the cross section that it is characterized in that described perforate is from comprising circular cross-section, polygonal cross-section is selected in the group of triangular-section or square-section.
15 the method for claim 1 is characterized in that the described perforate in described ferrite layer is formed like this: the partly described ferrite layer of sintering, and use high pressure bump medium is punched at least one hole.
16 the method for claim 1 is characterized in that two described metal/ferrite laminate magnets so are connected with each other, and make described metallic plate clamp described Ferrite Material and described dielectric substance is in opposite side.
17 the method for claim 1, it is characterized in that also comprising mixed ferrite material and glass particle, organic bond and solvent and form the ferrite slurry, and use described ferrite slurry at least one sprayer to be deposited on step on the described metallic plate.
18 the method for claim 1 is characterized in that also comprising the mixed dielectric material and form the dielectric slurry, and use described dielectric slurry at least one spraying to be deposited on step on the described metallic plate.
19 the method for claim 1, it is characterized in that also comprising described metallic plate is heated at least 300 ℃, and on described heated metal board, adhere to dried ferrite powder powder material, up to the step till at least one coating that forms described Ferrite Material on the described metallic plate.
20 the method for claim 1, it is characterized in that also comprising described metallic plate is heated at least 300 ℃, and on described heated metal board, adhere to dried dielectric medium powder material, up to the step till at least one coating that forms described dielectric substance on the described metallic plate.
21 the method for claim 1 is characterized in that also comprising at least a binder is coated on the described metallic plate, and use described at least a binder to connect the step of the ferrite powder powder material that one deck is dried at least on described metallic plate.
22 the method for claim 1 is characterized in that also comprising at least a binder is coated on the described metallic plate, and use described at least a binder to connect the step of the dielectric medium powder material that one deck is dried at least on described metallic plate.
23 the method for claim 1 is characterized in that at least one surface of described metallic plate is oxidized, thereby form at least one dielectric layer.
24 the method for claim 1 is characterized in that the Electron absorption device of described metallic plate as any stray electron.
25 the method for claim 1 is characterized in that described metallic plate as radiator, are used for thermal gradient is reduced to minimum.
26 the method for claim 1 is characterized in that described metallic plate stops any distortion of described laminate magnet.
27 the method for claim 1 is characterized in that described metallic plate is used as mask, are used for forming at least one screen one deck phosphor at least.
28 the method for claim 1 is characterized in that described laminate magnet is used as mask, are used for forming at least one screen one deck phosphor at least.
29 the method for claim 1 is characterized in that being used to form in the lamination at described laminate magnet corresponding hole in the described hole on the described metallic plate, and all described holes that correspondingly form be held with described metallic plate on the hole aim at.
30 1 kinds of methods that are used to make display unit, it is characterized in that comprising: make electron source in accordance with the method for claim 1, the screen that scribbles phosphor is fixed on the described near surface of the carrying anode assembly of described magnet, and the space of described electron source between described magnet of neutralization and described screen is evacuated.
31 1 kinds of electron sources, comprising at least one cathode assembly and at least one metal/ferrite laminate magnet, wherein said magnet has many magnetic channels that extend between the antipode of described magnet, wherein each magnetic channel makes the electron stream that receives from described cathode assembly form target-bound electron beam.
32 electron sources as claimed in claim 31 is characterized in that also comprising at least one gate devices that is arranged between described cathode assembly and the described magnet, and the described electron stream that is used to control from described cathode assembly enters described passage.
33 electron sources as claimed in claim 32 is characterized in that described passage is set in the described magnet with the form of the two-dimensional array of row and column.
34 electron sources as claimed in claim 31, it is characterized in that described magnet has gate devices, and described gate devices comprises a plurality of parallel column conductors and a plurality of parallel row conductor that vertically is provided with described column conductor, and each passage is positioned on the different intersection point of column conductor and row conductor.
35 electron sources as claimed in claim 34, it is characterized in that described gate devices be set at described cathode assembly on the described surface of described magnet.
36 electron sources as claimed in claim 34, it is characterized in that described gate devices be set at described magnet on the described surface of described cathode assembly.
37 electron sources as claimed in claim 31 is characterized in that described cathode assembly comprises feds.
38 electron sources as claimed in claim 31 is characterized in that described cathode assembly comprises the photoelectron negative electrode.
39 electron sources as claimed in claim 31 is characterized in that the cross section of at least one described passage changes along its length.
40 electron sources as claimed in claim 31 it is characterized in that at least one described passage is taper, and described surface channel have maximum surface area to the end of described cathode assembly.
41 electron sources as claimed in claim 31, the cross section that it is characterized in that described passage is from comprising circular cross-section, polygonal cross-section is selected in the group of triangular-section or square-section.
42 electron sources as claimed in claim 31 is characterized in that the turning of each described passage or edge are rounded.
43 electron sources as claimed in claim 31 is characterized in that described magnet comprises the layer structure of the porous that stacks, and the described hole in the described hole in every layer and its adjacent layer is aimed at, thereby make described passage continuity and by the described layer structure that stacks.
44 electron sources as claimed in claim 43 is characterized in that in the described magnetic structure that stacks every layer with pad (spacer) and adjacent layer separately.
45 electron sources as claimed in claim 31 is characterized in that described metallic plate is provided for the equipotential surface of even accelerated electron.
46 electron sources as claimed in claim 31 is characterized in that also comprising at least one the lip-deep insulating barrier that is arranged on described magnet.
47 electron sources as claimed in claim 31 is characterized in that also comprising described lip-deep at least one anode assembly away from described negative electrode that is arranged on described magnet, are used for by described passage accelerated electron.
48 electron sources as claimed in claim 47, it is characterized in that described anode assembly comprises the anode that a plurality of row that are parallel to described passage extend, described anode comprises each right corresponding to the anode of different channel column, each is to comprising respectively first and second anodes that extend along the opposite side of the row of corresponding anode, the described first anode interconnects, and described second plate interconnects.
49 electron sources as claimed in claim 48 is characterized in that described first and second anodes comprise around the transversary at the turning of described passage.
50 electron sources as claimed in claim 48 is characterized in that the device that comprises that also at least one is used for providing deflecting voltage on described first second plate being used to make the electron beam deflecting that sends from described passage.
51 1 kinds of display unit comprise: the described electron source of claim 31; Be used to receive the screen from the electronics of described electron source, described screen has the phosphor coating away from cathode side towards magnet; Be used for described gate devices and described anode assembly are applied control signal, thereby selectively control from described negative electrode by the electron stream of described passage, so as on screen, producing the device of image to described phosphor coating.
52 display unit as claimed in claim 51 is characterized in that described phosphor comprises a kind of phosphor of color.
53 display unit as claimed in claim 51, it is red, green to it is characterized in that described phosphor comprises, blue phospher.
54 display unit as claimed in claim 53 is characterized in that being provided with described arrangement for deflecting and are used for making the electronics that sends from described passage red according to the order of described repetition, green, red for one of described phosphor different phosphor, indigo plant ... addressing.
55 display unit as claimed in claim 51 is characterized in that comprising the last anode layer that is arranged on the described phosphor coating.
56 display unit as claimed in claim 51 is characterized in that described screen is an arc at least one direction, and constitute a resistive element in each interconnection between the adjacent first anode and between the adjacent second plate.
57 display unit as claimed in claim 51, thus it is characterized in that comprising is used for dynamically changing the device that the DC level that is applied on the described anode assembly is aimed at the electronics that sends from described passage and the described phosphor coating on described screen.
58 display unit as claimed in claim 51 is characterized in that comprising the aluminium backing adjacent with described phosphor coating.
59 1 kinds of display unit comprise: the described electron source of claim 31; Be used to receive screen from the electronics of described electron source, described screen has the phosphor coating away from described cathode side towards described magnet, described phosphor coating comprises the different phosphor of many groups, described group of figure setting to repeat, and each is organized corresponding to different passages; Be used for described gate devices and described anode assembly are applied control signal, thereby selectively control from described negative electrode by the device of described passage to the electron stream of described phosphor coating; And be used for providing defection signal, thereby in order being addressed to by the electronics that penetrates in the described passage on the different phosphor of described phosphor coating, so as on screen, producing the arrangement for deflecting of coloured image to described anode assembly.
60 display unit as claimed in claim 59 is characterized in that described phosphor comprises a kind of phosphor of color.
61 display unit as claimed in claim 59, it is red, green to it is characterized in that described phosphor comprises, blue phospher.
62 display unit as claimed in claim 61 is characterized in that being provided with described arrangement for deflecting and are used for red with the order of described repetition, green, red from the electronics of described passage ejaculation, indigo plant ..., be addressed on the different phosphor of described phosphor.
63 display unit as claimed in claim 59 is characterized in that comprising the final anode layer that is arranged on the described phosphor coating.
64 display unit as claimed in claim 59 is characterized in that described screen is an arc at least one direction, and between the adjacent described first anode and each interconnection between the adjacent described second plate comprise a resistive element.
65 display unit as claimed in claim 59, thus it is characterized in that comprising that being used for dynamically changing the DC level that is added on the anode assembly makes the device of aiming at from the electronics and the phosphor coating on the screen of magnetic channel ejaculation.
66 display unit as claimed in claim 59 is characterized in that comprising the aluminium backing adjacent with phosphor coating.
67 1 kinds of computer systems comprise: storage device; Be used for and described storage device between the data transfer device of Data transmission; Be used for handling the processor device of the data of storing at described storage device; And display unit as claimed in claim 51, be used to show the data of handling by described processor device.
68 1 kinds of computer systems comprise: storage device; Be used for and described storage device between the data transfer device of Data transmission; Be used for handling the processor device of the data of storing at described storage device; And display unit as claimed in claim 59, be used to show the data of handling by described processor device.
69 1 kinds of print heads (print-head) that comprise the described electron source of claim 31.
70 1 kinds of document handling apparatuss, thus comprise the described print head of claim 69 and provide data to produce the device of hard copy according to described data print head.
71 1 kinds of devices comprise: at least one cathode assembly; At least one metal/ferrite laminate magnet, wherein said magnet have a plurality of magnetic channels that extend between the opposite magnetic pole of described magnet, wherein each magnetic channel makes the electronics that receives from cathode assembly form electron beam; Be arranged on the gate devices between described cathode assembly and the described magnet, the electron stream that is used to control from described cathode assembly enters described passage; And the lip-deep anode assembly away from described negative electrode that is arranged on described magnet, be used for by described passage accelerated electron.
72 as the described device of claim 71, it is characterized in that being held vacuum state between described negative electrode and described magnet.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US854,284 | 1977-11-23 | ||
| US08/854,284 US5857883A (en) | 1997-05-09 | 1997-05-09 | Method of forming perforated metal/ferrite laminated magnet |
| US854284 | 1997-05-09 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1199914A true CN1199914A (en) | 1998-11-25 |
| CN1151520C CN1151520C (en) | 2004-05-26 |
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|---|---|---|---|
| CNB981079776A Expired - Fee Related CN1151520C (en) | 1997-05-09 | 1998-05-08 | Metal/ferrite laminate magnet and process thereof |
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|---|---|
| US (1) | US5857883A (en) |
| JP (1) | JP2970759B2 (en) |
| KR (1) | KR100279541B1 (en) |
| CN (1) | CN1151520C (en) |
| TW (1) | TW407286B (en) |
Cited By (1)
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|---|---|---|---|---|
| CN111788652A (en) * | 2018-02-27 | 2020-10-16 | 西门子医疗有限公司 | Electron emission device |
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|---|---|---|---|---|
| US6008573A (en) * | 1996-10-04 | 1999-12-28 | International Business Machines Corporation | Display devices |
| US5986395A (en) * | 1997-05-09 | 1999-11-16 | International Business Machines Corporation | Metal/ferrite laminate magnet |
| GB2341269B (en) * | 1998-09-03 | 2003-02-19 | Ibm | Magnetic channel cathode |
| GB2341268B (en) * | 1998-09-03 | 2003-05-21 | Ibm | Magnetic channel cathode |
| US6494758B1 (en) * | 1999-07-30 | 2002-12-17 | International Business Machines Corporation | Process of forming metal/ferrite laminated magnet |
| US6509687B1 (en) | 1999-11-30 | 2003-01-21 | International Business Machines Corporation | Metal/dielectric laminate with electrodes and process thereof |
| US6413339B1 (en) * | 1999-12-22 | 2002-07-02 | International Business Machines Corporation | Low temperature sintering of ferrite materials |
| US6653776B1 (en) * | 2000-06-28 | 2003-11-25 | International Business Machines Corporation | Discrete magnets in dielectric forming metal/ceramic laminate and process thereof |
| US7569082B2 (en) * | 2004-10-07 | 2009-08-04 | Gm Global Technology Operations, Inc. | Manufacture of unitized electrode assembly for PEM fuel cells |
| US20060286148A1 (en) * | 2005-05-18 | 2006-12-21 | Ppd, Inc. | Method of forming implants |
| US7615161B2 (en) * | 2005-08-19 | 2009-11-10 | General Electric Company | Simplified way to manufacture a low cost cast type collimator assembly |
| US20070169600A1 (en) * | 2006-01-24 | 2007-07-26 | International Business Machines Corporation | Method and structure to enable fine grid mlc technology |
| KR100819876B1 (en) * | 2006-09-19 | 2008-04-07 | 삼성전기주식회사 | Alloy circuit board and manufacturing method thereof |
| EP3531437A1 (en) | 2018-02-27 | 2019-08-28 | Siemens Healthcare GmbH | Electron-emitting device |
| JP2022127034A (en) * | 2021-02-19 | 2022-08-31 | セイコーエプソン株式会社 | Amorphous metal ribbon, method for manufacturing amorphous metal ribbon, and magnetic core |
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| US4023057A (en) * | 1974-03-22 | 1977-05-10 | Pacific Textile & Chemical Corporation | Electric motor field magnets |
| DE2655480C2 (en) * | 1976-12-08 | 1982-04-22 | Florian Prof. Dr.-Ing.habil. 4630 Bochum Haberey | Method for connecting ferrite parts |
| US4650435A (en) * | 1980-12-18 | 1987-03-17 | Rca Corporation | Method of making a focusing color-selection structure for a CRT |
| JPS58151331A (en) * | 1982-03-02 | 1983-09-08 | Fuji Elelctrochem Co Ltd | Magnetic oxide material capable of being sintered at low temperature |
| KR0127666B1 (en) * | 1992-11-25 | 1997-12-30 | 모리시다 요이찌 | Ceramic electronic device and method of producing the same |
| GB2304981A (en) * | 1995-08-25 | 1997-03-26 | Ibm | Electron source eg for a display |
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1997
- 1997-05-09 US US08/854,284 patent/US5857883A/en not_active Expired - Lifetime
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1998
- 1998-05-07 TW TW087107068A patent/TW407286B/en not_active IP Right Cessation
- 1998-05-07 JP JP10124366A patent/JP2970759B2/en not_active Expired - Fee Related
- 1998-05-08 CN CNB981079776A patent/CN1151520C/en not_active Expired - Fee Related
- 1998-05-08 KR KR1019980016426A patent/KR100279541B1/en not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111788652A (en) * | 2018-02-27 | 2020-10-16 | 西门子医疗有限公司 | Electron emission device |
| CN111788652B (en) * | 2018-02-27 | 2024-08-09 | 西门子医疗有限公司 | Electron emission device having a light-emitting element with a light-emitting element |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100279541B1 (en) | 2001-03-02 |
| JP2970759B2 (en) | 1999-11-02 |
| US5857883A (en) | 1999-01-12 |
| JPH1140047A (en) | 1999-02-12 |
| KR19980086862A (en) | 1998-12-05 |
| TW407286B (en) | 2000-10-01 |
| CN1151520C (en) | 2004-05-26 |
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