CN119856258A - 半导体基板的清洗方法、经加工的半导体基板的制造方法以及剥离和溶解用组合物 - Google Patents

半导体基板的清洗方法、经加工的半导体基板的制造方法以及剥离和溶解用组合物 Download PDF

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Publication number
CN119856258A
CN119856258A CN202380065537.3A CN202380065537A CN119856258A CN 119856258 A CN119856258 A CN 119856258A CN 202380065537 A CN202380065537 A CN 202380065537A CN 119856258 A CN119856258 A CN 119856258A
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CN
China
Prior art keywords
component
semiconductor substrate
formula
carbon atoms
group
Prior art date
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Pending
Application number
CN202380065537.3A
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English (en)
Chinese (zh)
Inventor
柳生雅文
新城彻也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Chemical Corp
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Nissan Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Corp filed Critical Nissan Chemical Corp
Publication of CN119856258A publication Critical patent/CN119856258A/zh
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/43—Solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5022—Organic solvents containing oxygen
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
    • C09J183/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38—Cationic compounds
    • C11D1/62—Quaternary ammonium compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/30—Cleaning after the substrates have been singulated
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Engineering & Computer Science (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Detergent Compositions (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CN202380065537.3A 2022-09-13 2023-09-06 半导体基板的清洗方法、经加工的半导体基板的制造方法以及剥离和溶解用组合物 Pending CN119856258A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022-144987 2022-09-13
JP2022144987 2022-09-13
PCT/JP2023/032514 WO2024058025A1 (ja) 2022-09-13 2023-09-06 半導体基板の洗浄方法、加工された半導体基板の製造方法、及び、剥離及び溶解用組成物

Publications (1)

Publication Number Publication Date
CN119856258A true CN119856258A (zh) 2025-04-18

Family

ID=90275184

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380065537.3A Pending CN119856258A (zh) 2022-09-13 2023-09-06 半导体基板的清洗方法、经加工的半导体基板的制造方法以及剥离和溶解用组合物

Country Status (7)

Country Link
US (1) US20260022312A1 (https=)
EP (1) EP4571819A4 (https=)
JP (1) JPWO2024058025A1 (https=)
KR (1) KR20250068639A (https=)
CN (1) CN119856258A (https=)
TW (1) TW202419623A (https=)
WO (1) WO2024058025A1 (https=)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6818608B2 (en) 2002-02-01 2004-11-16 John C. Moore Cured polymers dissolving compositions
JP2014133855A (ja) 2012-12-11 2014-07-24 Fujifilm Corp シロキサン樹脂の除去剤、それを用いたシロキサン樹脂の除去方法並びに半導体基板製品及び半導体素子の製造方法
CN112602174B (zh) * 2018-10-16 2023-12-08 株式会社力森诺科 组合物、粘接性聚合物的清洗方法、器件晶圆的制造方法和支撑晶圆的再生方法
WO2021100651A1 (ja) * 2019-11-20 2021-05-27 日産化学株式会社 洗浄剤組成物及び洗浄方法
WO2021106460A1 (ja) * 2019-11-25 2021-06-03 昭和電工株式会社 分解洗浄組成物の製造方法
JP7780127B2 (ja) * 2020-03-23 2025-12-04 日産化学株式会社 半導体基板の洗浄方法及び加工された半導体基板の製造方法
CN115989142A (zh) * 2020-08-27 2023-04-18 日产化学株式会社 层叠体及剥离剂组合物
TW202504983A (zh) * 2021-09-16 2025-02-01 日商日產化學股份有限公司 半導體基板之洗淨方法、加工後之半導體基板之製造方法、以及剝離及溶解用組成物

Also Published As

Publication number Publication date
TW202419623A (zh) 2024-05-16
US20260022312A1 (en) 2026-01-22
EP4571819A4 (en) 2025-12-31
EP4571819A1 (en) 2025-06-18
JPWO2024058025A1 (https=) 2024-03-21
KR20250068639A (ko) 2025-05-16
WO2024058025A1 (ja) 2024-03-21

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